Showing 1–45 of 45 results for author: Gong, Y

All-optical and ultrafast control of high-order exciton-polariton orbital modes

Authors: Yuyang Zhang, Xin Zeng, Wenna Du, Zhiyong Zhang, Yuexing Xia, Jiepeng Song, Jianhui Fu, Shuai Zhang, Yangguang Zhong, Yubo Tian, Yiyang Gong, Shuai Yue, Yuanyuan Zheng, Xiaotian Bao, Yutong Zhang, Qing Zhang, Xinfeng Liu

Abstract: Exciton-polaritons flows within closed quantum circuits can spontaneously form phase-locked modes that carry orbital angular momentum (OAM). With its infinite set of angular momentum quantum numbers, high-order OAM represents a transformative solution to the bandwidth bottleneck in multiplexed optical communication. However, its practical application is hindered by the limited choice of materials… ▽ More Exciton-polaritons flows within closed quantum circuits can spontaneously form phase-locked modes that carry orbital angular momentum (OAM). With its infinite set of angular momentum quantum numbers, high-order OAM represents a transformative solution to the bandwidth bottleneck in multiplexed optical communication. However, its practical application is hindered by the limited choice of materials which in general requires cryogenic temperatures and the reliance on mechanical switching. In this work, we achieve stable and high-order (up to order of 33) OAM modes by constructing a closed quantum circuit using the halide perovskite microcavities at room temperature. By controlling the spatial and temporal symmetry of the closed quantum circuits using another laser pulse, we achieve significant tuning OAM of EP flows from 8 to 12. Our work demonstrate all-optical and ultrafast control of high-order OAM using exciton-polariton condensates in perovskite microcavities that would have important applications in high-throughput optical communications. △ Less

Submitted 12 February, 2025; originally announced February 2025.

Comments: 23 pages,5 figures

Flux pinning in superconducting multilayer 2H-NbSe$_2$ nano-step junction

Authors: Minseong Kwon, Mingi Kim, Yoonji Gong, Heeyeon Lee, Young Duck Kim

Abstract: Superconductors exhibit dissipationless supercurrents even under finite bias and magnetic field conditions, provided these remain below the critical values. However, type-II superconductors in the flux flow regime display Ohmic dissipation arising from vortex dynamics under finite magnetic fields. The interplay between supercurrent and Ohmic dissipation in a type-II superconductor is dictated by v… ▽ More Superconductors exhibit dissipationless supercurrents even under finite bias and magnetic field conditions, provided these remain below the critical values. However, type-II superconductors in the flux flow regime display Ohmic dissipation arising from vortex dynamics under finite magnetic fields. The interplay between supercurrent and Ohmic dissipation in a type-II superconductor is dictated by vortex motion and the robustness of vortex pinning forces. In this study, we present an experimental investigation of the superconducting phase transitions and vortex dynamics in the atomically thin type-II superconductor 2H-NbSe$_2$. We fabricated a high-quality multilayer 2H-NbSe$_2$ with a step junction, demonstrating supercurrent in clean limit below a critical temperature of 6.6 K and a high residual resistance ratio of 17. The upper critical field was estimated to be 4.5 T and the Ginzburg-Landau coherence length 8.6 nm. Additionally, we observed phase transitions induced by vortex viscous dynamics in the 2H-NbSe$_2$ step junction. Analysis of the pinning force density using the Dew-Hughes model indicates that the pinning force in the 2H-NbSe$_2$ device can be attributed to step junction, related to the surface-$Δκ$ type of pinning centers. Our findings pave the way for engineering pinning forces by introducing artificial pinning centers through partial atomic thickness variation in layered 2D superconductors while minimizing unwanted quality degradation in the system. △ Less

Submitted 7 January, 2025; originally announced January 2025.

Comments: 19 pages, 4 figures

Journal ref: Materials for Quantum Technology 5, 015201 (2025)

Towards establishing best practice in the analysis of hydrogen and deuterium by atom probe tomography

Authors: Baptiste Gault, Aparna Saksena, Xavier Sauvage, Paul Bagot, Leonardo S. Aota, Jonas Arlt, Lisa T. Belkacemi, Torben Boll, Yi-Sheng Chen, Luke Daly, Milos B. Djukic, James O. Douglas, Maria J. Duarte, Peter J. Felfer, Richard G. Forbes, Jing Fu, Hazel M. Gardner, Ryota Gemma, Stephan S. A. Gerstl, Yilun Gong, Guillaume Hachet, Severin Jakob, Benjamin M. Jenkins, Megan E. Jones, Heena Khanchandani , et al. (20 additional authors not shown)

Abstract: As hydrogen is touted as a key player in the decarbonization of modern society, it is critical to enable quantitative H analysis at high spatial resolution, if possible at the atomic scale. Indeed, H has a known deleterious impact on the mechanical properties (strength, ductility, toughness) of most materials that can hinder their use as part of the infrastructure of a hydrogen-based economy. Enab… ▽ More As hydrogen is touted as a key player in the decarbonization of modern society, it is critical to enable quantitative H analysis at high spatial resolution, if possible at the atomic scale. Indeed, H has a known deleterious impact on the mechanical properties (strength, ductility, toughness) of most materials that can hinder their use as part of the infrastructure of a hydrogen-based economy. Enabling H mapping, including local hydrogen concentration analyses at specific microstructural features, is essential for understanding the multiple ways that H affect the properties of materials, including for instance embrittlement mechanisms and their synergies, but also spatial mapping and quantification of hydrogen isotopes is essential to accurately predict tritium inventory of future fusion power plants, ensuring their safe and efficient operation for example. Atom probe tomography (APT) has the intrinsic capabilities for detecting hydrogen (H), and deuterium (D), and in principle the capacity for performing quantitative mapping of H within a material's microstructure. Yet the accuracy and precision of H analysis by APT remain affected by the influence of residual hydrogen from the ultra-high vacuum chamber that can obscure the signal of H from within the material, along with a complex field evaporation behavior. The present article reports the essence of discussions at a focused workshop held at the Max-Planck Institute for Sustainable Materials in April 2024. The workshop was organized to pave the way to establishing best practices in reporting APT data for the analysis of H. We first summarize the key aspects of the intricacies of H analysis by APT and propose a path for better reporting of the relevant data to support interpretation of APT-based H analysis in materials. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Asymmetrical temporal dynamics of edge modes in Su-Schrieffer-Heeger lattice with Kerr nonlinearity

Authors: Ghada Alharbi, Stephan Wong, Yongkang Gong, Sang Soon Oh

Abstract: Optical bistability and oscillating phases exist in a Sagnac interferometer and a single ring resonator made of $χ^{(3)}$ nonlinear medium where the refractive indices are modulated by the light intensity due to the Kerr nonlinearity. An array of coupled nonlinear ring resonators behave similarly but with more complexity due to the presence of the additional couplings. Here, we theoretically demon… ▽ More Optical bistability and oscillating phases exist in a Sagnac interferometer and a single ring resonator made of $χ^{(3)}$ nonlinear medium where the refractive indices are modulated by the light intensity due to the Kerr nonlinearity. An array of coupled nonlinear ring resonators behave similarly but with more complexity due to the presence of the additional couplings. Here, we theoretically demonstrate the bifurcation of edge modes which leads to optical bistability in the Su-Schrieffer-Heeger lattice with the Kerr nonlinearity. Additionally, we demonstrate periodic and chaotic switching behaviors in an oscillating phase resulting from the coupling between the edge mode and bulk modes with different chiralities, i.e., clockwise and counter-clockwise circulations. △ Less

Submitted 1 August, 2024; v1 submitted 1 March, 2024; originally announced March 2024.

Comments: 10 pages, 7 figures

Highly sensitive magnetic properties and large linear magnetoresistance in antiferromagnetic CrxSe(0.875\lex\le1)single crystals

Authors: Yuqing Bai, Shuang Pan, Ziqian Lu, Yuanyuan Gong, Guizhou Xu, Feng Xu

Abstract: CrxSe (x\le1) is a class of quasi-layered binary compounds with potential applications in spintronics due to its intriguing antiferromagnetic properties. In this work, CrxSe single crystals with high Cr content (x=0.87, 0.91 and 0.95) were grown, and their magnetic and transport properties were investigated in detail. It is found that with small increase of Cr content, the Néel temperature (TN) of… ▽ More CrxSe (x\le1) is a class of quasi-layered binary compounds with potential applications in spintronics due to its intriguing antiferromagnetic properties. In this work, CrxSe single crystals with high Cr content (x=0.87, 0.91 and 0.95) were grown, and their magnetic and transport properties were investigated in detail. It is found that with small increase of Cr content, the Néel temperature (TN) of the samples can dramatically increase from 147 K to 257 K, accompanied with obvious changes in the magnetic anisotropy and hysteresis. The phenomena of field-induced spin-flop transitions were unveiled in these alloys, indicating their comparatively low anisotropy. The magnetoresistance (MR) of the three compounds showed positive dependence at low temperatures and particularly, non-saturated linear positive MR was observed in Cr0.91Se and Cr0.95Se, with a large value of 16.2% achieved in Cr0.91Se (10K, 9T). The calculated Fermi surface and MR showed that the quasi-linear MR is a product of carrier compensation. Our work revealed highly sensitive magnetic and transport properties in the Cr-Se compounds, which can lay foundation when constructing further antiferromagnetic spintronic devices based on them. △ Less

Submitted 30 November, 2023; originally announced November 2023.

Journal ref: Journal of Alloys and Compounds 968 (2023) 172080

Machine learning-enabled tomographic imaging of chemical short-range atomic ordering

Authors: Yue Li, Timoteo Colnaghi, Yilun Gong, Huaide Zhang, Yuan Yu, Ye Wei, Bin Gan, Min Song, Andreas Marek, Markus Rampp, Siyuan Zhang, Zongrui Pei, Matthias Wuttig, Jörg Neugebauer, Zhangwei Wang, Baptiste Gault

Abstract: In solids, chemical short-range order (CSRO) refers to the self-organisation of atoms of certain species occupying specific crystal sites. CSRO is increasingly being envisaged as a lever to tailor the mechanical and functional properties of materials. Yet quantitative relationships between properties and the morphology, number density, and atomic configurations of CSRO domains remain elusive. Here… ▽ More In solids, chemical short-range order (CSRO) refers to the self-organisation of atoms of certain species occupying specific crystal sites. CSRO is increasingly being envisaged as a lever to tailor the mechanical and functional properties of materials. Yet quantitative relationships between properties and the morphology, number density, and atomic configurations of CSRO domains remain elusive. Herein, we showcase how machine learning-enhanced atom probe tomography (APT) can mine the near-atomically resolved APT data and jointly exploit the technique's high elemental sensitivity to provide a 3D quantitative analysis of CSRO in a CoCrNi medium-entropy alloy. We reveal multiple CSRO configurations, with their formation supported by state-of-the-art Monte-Carlo simulations. Quantitative analysis of these CSROs allows us to establish relationships between processing parameters and physical properties. The unambiguous characterization of CSRO will help refine strategies for designing advanced materials by manipulating atomic-scale architectures. △ Less

Submitted 23 March, 2023; originally announced March 2023.

A precisely regulating phase evolution strategy for highly efficient kesterite solar cells

Authors: Jiazheng Zhou, Xiao Xu, Huijue Wu, Jinlin Wang, Licheng Lou, Kang Yin, Yuancai Gong, Jiangjian Shi, Yanhong Luo, Dongmei Li, Hao Xin, Qingbo Meng

Abstract: Phase evolution during the selenization is crucial for high-quality kesterite Cu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells. Herein, we regulate kinetic process of phase evolution from Cu+-Sn4+-MOE (MOE: 2-methoxyethanol) system by precisely controlling positive chamber pressure. We found that, at the heating-up stage, Se vapor concentration is intentionally suppressed in low-temper… ▽ More Phase evolution during the selenization is crucial for high-quality kesterite Cu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells. Herein, we regulate kinetic process of phase evolution from Cu+-Sn4+-MOE (MOE: 2-methoxyethanol) system by precisely controlling positive chamber pressure. We found that, at the heating-up stage, Se vapor concentration is intentionally suppressed in low-temperature region, which effectively reduces collision probability between the CZTS and Se atoms, thus remarkably inhibiting formation of secondary phases on the surface and multiple-step phase evolution processes. This strategy enables the phase evolution to start at relatively higher temperature and thereby leading to high crystalline quality CZTSSe absorber with fewer defects, and corresponding CZTSSe solar cell can present 14.1% efficiency (total area), which is the highest result so far. This work provides important insights into selenization mechanism of CZTSSe absorbers and explores a new way of kinetic regulation strategy to simplify the phase evolution path to efficient CZTSSe solar cells. △ Less

Submitted 24 October, 2022; originally announced October 2022.

Journal ref: Nature Energy 8, 526 (2023)

Braiding lateral morphotropic grain boundary in homogeneitic oxides

Authors: Shengru Chen, Qinghua Zhang, Dongke Rong, Yue Xu, Jinfeng Zhang, Fangfang Pei, He Bai, Yan-Xing Shang, Shan Lin, Qiao Jin, Haitao Hong, Can Wang, Wensheng Yan, Haizhong Guo, Tao Zhu, Lin Gu, Yu Gong, Qian Li, Lingfei Wang, Gang-Qin Liu, Kui-juan Jin, Er-Jia Guo

Abstract: Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries… ▽ More Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis. △ Less

Submitted 13 July, 2022; originally announced July 2022.

Comments: 38 pages, 4 main figures

Tailoring topological transition of anisotropic polaritons by interface engineering in biaxial crystals

Authors: Yali Zeng, Qingdong Ou, Lu Liu, Chunqi Zheng, Ziyu Wang, Youning Gong, Xiang Liang, Yupeng Zhang, Guangwei Hu, Zhilin Yang, Cheng-Wei Qiu, Qiaoliang Bao, Huanyang Chen, Zhigao Dai

Abstract: Polaritons in polar biaxial crystals with extreme anisotropy offer a promising route to manipulate nanoscale light-matter interactions. The dynamical modulation of their dispersion is great significance for future integrated nano-optics but remains challenging. Here, we report a momentum-directed strategy, a coupling between the modes with extra momentum supported by the interface and in-plane hyp… ▽ More Polaritons in polar biaxial crystals with extreme anisotropy offer a promising route to manipulate nanoscale light-matter interactions. The dynamical modulation of their dispersion is great significance for future integrated nano-optics but remains challenging. Here, we report a momentum-directed strategy, a coupling between the modes with extra momentum supported by the interface and in-plane hyperbolic polaritons, to tailor topological transitions of anisotropic polaritons in biaxial crystals. We experimentally demonstrate such tailored polaritons at the interface of heterostructures between graphene and α-phase molybdenum trioxide (α-MoO3). The interlayer coupling can be electrically modulated by changing the Fermi level in graphene, enabling a dynamic topological transition. More interestingly, we found that the topological transition occurs at a constant Fermi level when tuning the thickness of α-MoO3. The momentum-directed strategy implemented by interface engineering offers new insights for optical topological transitions, which may shed new light for programmable polaritonics, energy transfer and neuromorphic photonics. △ Less

Submitted 4 January, 2022; originally announced January 2022.

Ambi-chiral anomalous Hall effect in magnetically doped topological insulators

Authors: Chang Liu, Yunyi Zang, Yan Gong, Ke He, Xucun Ma, Qi-Kun Xue, Yayu Wang

Abstract: The chirality associated with broken time reversal symmetry in magnetically doped topological insulators has important implications to the quantum transport phenomena. Here we report the anomalous Hall effect studies in Mn- and Cr-doped Bi$_2$Te$_3$ topological insulators with varied thickness and doping content. By tracing the chirality of the Hall loops, we find that the Mn-type anomalous Hall e… ▽ More The chirality associated with broken time reversal symmetry in magnetically doped topological insulators has important implications to the quantum transport phenomena. Here we report the anomalous Hall effect studies in Mn- and Cr-doped Bi$_2$Te$_3$ topological insulators with varied thickness and doping content. By tracing the chirality of the Hall loops, we find that the Mn-type anomalous Hall effect with clockwise chirality is strengthened by the reduction of film thickness, which is opposite to that of the Cr-type anomalous Hall effect with counterclockwise chirality. We provide a phenomenological model to explain the evolution of magnetic order and anomalous Hall effect chirality in magnetically doped topological insulators. △ Less

Submitted 12 December, 2021; originally announced December 2021.

Comments: 11 pages, 5 figures

Journal ref: SCIENCE CHINA Physics, Mechanics & Astronomy (2022)

Superconductivity modulated by structural phase transitions in pressurized vanadium-based kagome metals

Authors: Feng Du, Rui Li, Shuaishuai Luo, Yu Gong, Yanchun Li, Sheng Jiang, Brenden R. Ortiz, Yi Liu, Xiaofeng Xu, Stephen D. Wilson, Chao Cao, Yu Song, Huiqiu Yuan

Abstract: The interplay of superconductivity with electronic and structural instabilities on the kagome lattice provides a fertile ground for the emergence of unusual phenomena. The vanadium-based kagome metals $A$V$_3$Sb$_5$ ($A=$ K, Rb, Cs) exhibit superconductivity on an almost ideal kagome lattice, with the superconducting transition temperature $T_{\rm c}$ forming two domes upon pressure-tuning. The fi… ▽ More The interplay of superconductivity with electronic and structural instabilities on the kagome lattice provides a fertile ground for the emergence of unusual phenomena. The vanadium-based kagome metals $A$V$_3$Sb$_5$ ($A=$ K, Rb, Cs) exhibit superconductivity on an almost ideal kagome lattice, with the superconducting transition temperature $T_{\rm c}$ forming two domes upon pressure-tuning. The first dome arises from the competition between superconductivity and a charge-density-wave, whereas the origin for the second dome remains unclear. Herein, we show that the appearance of the second superconducting dome in KV$_3$Sb$_5$ and RbV$_3$Sb$_5$ is associated with transitions from hexagonal $P6$/$mmm$ to monoclinic $P2$/$m$ structures, evidenced by splitting of structural peaks from synchrotron powder X-ray diffraction experiments and imaginary phonon frequencies in first-principles calculations. In KV$_3$Sb$_5$, transition to an orthorhombic $Pmmm$ structure is further observed for pressure $p\gtrsim20$ GPa, and is correlated with the strong suppression of $T_{\rm c}$ in the second superconducting dome. Our findings indicate distortions of the crystal structure modulates superconductivity in $A$V$_3$Sb$_5$ under pressure, providing a platform to study the emergence of superconductivity in the presence of multiple structural instabilities. △ Less

Submitted 18 October, 2021; originally announced October 2021.

Journal ref: Phys. Rev. B 106, 024516 (2022)

On the influence of alloy composition on the additive manufacturability of Ni-based superalloys

Authors: Joseph N. Ghoussoub, Yuanbo T. Tang, William J B. Dick-Cleland, André A. N. Németh, Yilun Gong, D. Graham McCartney, Alan C. F. Cocks, Roger C. Reed

Abstract: The susceptibility of nickel-based superalloys to processing-induced crack formation during laser powder-bed additive manufacturing is studied. Twelve different alloys -- some of existing (heritage) type but also other newly-designed ones -- are considered. A strong inter-dependence of alloy composition and processability is demonstrated. Stereological procedures are developed to enable the two do… ▽ More The susceptibility of nickel-based superalloys to processing-induced crack formation during laser powder-bed additive manufacturing is studied. Twelve different alloys -- some of existing (heritage) type but also other newly-designed ones -- are considered. A strong inter-dependence of alloy composition and processability is demonstrated. Stereological procedures are developed to enable the two dominant defect types found -- solidification cracks and solid-state ductility dip cracks -- to be distinguished and quantified. Differential scanning calorimetry, creep stress relaxation tests at 1000$^\circ$C and measurements of tensile ductility at 800$^\circ$C are used to interpret the effects of alloy composition. A model for solid-state cracking is proposed, based on an incapacity to relax the thermal stress arising from constrained differential thermal contraction; its development is supported by experimental measurements using a constrained bar cooling test. A modified solidification cracking criterion is proposed based upon solidification range but including also a contribution from the stress relaxation effect. This work provides fundamental insights into the role of composition on the additive manufacturability of these materials. △ Less

Submitted 30 September, 2021; originally announced September 2021.

Atomic-Scale Visualization and Manipulation of Domain boundaries in 2D Ferroelectric In2Se3

Authors: Fan Zhang, Zhe Wang, Lixuan Liu, Anmin Nie, Yongji Gong, Wenguang Zhu, Chenggang Tao

Abstract: Domain boundaries in ferroelectric materials exhibit rich and diverse physical properties distinct from their parent materials and have been proposed for novel applications in nanoelectronics and quantum information technology. Due to their complexity and diversity, the internal atomic and electronic structure of domain boundaries that governs the electronic properties as well as the kinetics of d… ▽ More Domain boundaries in ferroelectric materials exhibit rich and diverse physical properties distinct from their parent materials and have been proposed for novel applications in nanoelectronics and quantum information technology. Due to their complexity and diversity, the internal atomic and electronic structure of domain boundaries that governs the electronic properties as well as the kinetics of domain switching remains far from being elucidated. By using scanning tunneling microscopy and spectroscopy (STM/S) combined with density functional theory (DFT) calculations, we directly visualize the atomic structure of domain boundaries in two-dimensional (2D) ferroelectric beta' In2Se3 down to the monolayer limit and reveal a double-barrier energy potential of the 60° tail to tail domain boundaries for the first time. We further controllably manipulate the domain boundaries with atomic precision by STM and show that the movements of domain boundaries can be driven by the electric field from an STM tip and proceed by the collective shifting of atoms at the domain boundaries. The results will deepen our understanding of domain boundaries in 2D ferroelectric materials and stimulate innovative applications of these materials. △ Less

Submitted 13 September, 2021; originally announced September 2021.

Comments: 26 pages (not including SI), 4 figures

Crystallography of the martensitic transformation between Ni2In-type hexagonal and TiNiSi-type orthorhombic phases

Authors: Tingting Zhang, Yuanyuan Gong, Bin Wang, Dongyu Cen, Feng Xu

Abstract: MnMX (M = Co or Ni, X = Si or Ge) alloys, experiencing structural transformation between Ni2In-type hexagonal and TiNiSi-type orthorhombic phases, attract considerable attention due to their potential applications as room-temperature solid refrigerants. Although lots of studies have been carried out on how to tune this transformation and obtain large entropy change in a wide temperature region, th… ▽ More MnMX (M = Co or Ni, X = Si or Ge) alloys, experiencing structural transformation between Ni2In-type hexagonal and TiNiSi-type orthorhombic phases, attract considerable attention due to their potential applications as room-temperature solid refrigerants. Although lots of studies have been carried out on how to tune this transformation and obtain large entropy change in a wide temperature region, the crystallography of this martensitic transformation is still unknown. The biggest obstacle for crystallography investigation is to obtain a bulk sample, in which hexagonal and orthorhombic phases coexist, because the MnMX alloys will fragment into powders after experiencing the transformation. For this reason, we carefully tune the transformation temperature to be slightly below 300 K. In that case, a bulk sample with small amounts of orthorhombic phases distributed in hexagonal matrix is obtained. Most importantly, there are no cracks between the two phases. It facilities us to investigate the microstructure using electron microscope. The obtained results indicate that the orientation relationship between hexagonal and orthorhombic structures is [4-2-23]h//[120]o & (01-10)h//(001)o and the habit plane is {-2113.26}h. WLR theory is also adopted to calculate the habit plane. The calculated result agrees well with the measured one. Our work reveals the crystallography of hexagonal-orthorhombic transformation for the first time and is helpful for understanding the transformation-associated physical effects in MnMX alloys. △ Less

Submitted 2 August, 2021; originally announced August 2021.

Comments: 22 pages, 5 figures, 2 tables

Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$

Authors: Chongli Yang, Jing Guo, Yazhou Zhou, Shu Cai, Vladimir A. Sidorov, Cheng Huang, Sijin Long, Youguo Shi, Qiuyun Chen, Shiyong Tan, Yu Gong, Yanchun Li, Xiaodong Li, Qi Wu, Piers Coleman, Tao Xiang, Liling Sun

Abstract: The recent discovery of superconductivity in heavy Fermion compound UTe2, a candidate topological and triplet-paired superconductor, has aroused widespread interest. However, to date, there is no consensus on whether the stoichiometric sample of UTe2 is superconducting or not due to lack of reliable evidence to distinguish the difference between the nominal and real compositions of samples. Here,… ▽ More The recent discovery of superconductivity in heavy Fermion compound UTe2, a candidate topological and triplet-paired superconductor, has aroused widespread interest. However, to date, there is no consensus on whether the stoichiometric sample of UTe2 is superconducting or not due to lack of reliable evidence to distinguish the difference between the nominal and real compositions of samples. Here, we are the first to clarify that the stoichiometric UT2 is non-superconducting at ambient pressure and under hydrostatic pressure up to 6 GPa, however we find that it can be compressed into superconductivity by application of quasi-uniaxial pressure. Measurements of resistivity, magnetoresistance and susceptibility reveal that the quasi-uniaxial pressure results in a suppression of the Kondo coherent state seen at ambient pressure, and then leads to a superconductivity initially emerged on the ab-plane at 1.5 GPa. At 4.8 GPa, the superconductivity is developed in three crystallographic directions. The superconducting state coexists with an exotic magnetic ordered state that develops just below the onset temperature of the superconducting transition. The discovery of the quasi-uniaxial-pressure-induced superconductivity with exotic magnetic state in the stoichiometric UTe2 not only provide new understandings on this compound, but also highlight the vital role of Te deficiency in developing the superconductivity at ambient pressures. △ Less

Submitted 15 July, 2022; v1 submitted 15 June, 2021; originally announced June 2021.

Comments: 28 pages, 8 figures

Journal ref: Phys. Rev. B 106(2022)024503

Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2

Authors: Hualei Sun, Cuiqun Chen, Yusheng Hou, Yu Gong, Mengwu Huo, Lisi Li, Jia Yu, Wanping Cai, Naitian Liu, Ruqian Wu, Dao-Xin Yao, Meng Wang

Abstract: We report a comprehensive high-pressure study on the antiferromagnetic topological insulator EuSn2As2 up to 21.1 GPa through measurements of synchrotron x-ray diffraction, electrical resistance, magnetic resistance, and Hall transports combined with first-principles calculations. No evident trace of a structural phase transition is detected. The Neel temperatures determined from resistance are inc… ▽ More We report a comprehensive high-pressure study on the antiferromagnetic topological insulator EuSn2As2 up to 21.1 GPa through measurements of synchrotron x-ray diffraction, electrical resistance, magnetic resistance, and Hall transports combined with first-principles calculations. No evident trace of a structural phase transition is detected. The Neel temperatures determined from resistance are increased from 24 to 77 K under pressure, which is resulted from the enhanced magnetic exchange couplings between Eu2+ ions yielded by our first-principles calculations. The negative magnetoresistance of EuSn2As2 persists to higher temperatures accordantly. However, the enhancement of the observed Néel temperatures deviates from the calculations obviously above 10.0 GPa. In addition, the magnitude of the magnetoresistance, the Hall coefficients, and the charge carrier densities show abrupt changes between 6.9 to 10.0 GPa. The abrupt changes probably originate from a pressure induced valence change of Eu ions from a divalent state to a divalent and trivalent mixed state. Our results provide insights into variation of the magnetism of EuSn2As2 and similar antiferromagnetic topological insulators under pressure. △ Less

Submitted 19 April, 2021; originally announced April 2021.

Comments: 12 pages,5 figures

Journal ref: Sci. China-Phys. Mech. Astron. 64, 118211 (2021)

Universal quantum transition from superconducting to insulating states in pressurized Bi2Sr2CaCu2O8+δ superconductors

Authors: Yazhou Zhou, Jing Guo, Shu Cai, Genda Gu, Chengtian Lin, Hongtao Yan, Cheng Huang, Chongli Yang, Sijin Long, Yu Gong, Yanchun Li, Xiaodong Li, Qi Wu, Jiangping Hu, Xingjiang Zhou, Tao Xiang, Liling Sun

Abstract: Copper oxide superconductors have continually fascinated the communities of condensed matter physics and material sciences because they host the highest ambient-pressure superconducting transition temperature (Tc) and mysterious physics. Searching for the universal correlation between the superconducting state and its normal state or neighboring ground state is believed to be an effective way for… ▽ More Copper oxide superconductors have continually fascinated the communities of condensed matter physics and material sciences because they host the highest ambient-pressure superconducting transition temperature (Tc) and mysterious physics. Searching for the universal correlation between the superconducting state and its normal state or neighboring ground state is believed to be an effective way for finding clues to elucidate the underlying mechanism of the superconductivity. One of the common pictures for the copper oxide superconductors is that a well-behaved metallic phase will present after the superconductivity is entirely suppressed by chemical doping or application of the magnetic field. Here, we report a different observation of universal quantum transition from superconducting state to insulating-like state under pressure in the under-, optimally- and over-doped Bi2212 superconductors with two CuO2 planes in a unit cell. The same phenomenon has been also found in the Bi2201 superconductor with one CuO2 plane and the Bi2223 superconductor with three CuO2 planes in a unit cell. These results not only provide fresh information but also pose a new challenge for achieving a unified understanding on the underlying physics of the high-Tc superconductivity. △ Less

Submitted 16 June, 2021; v1 submitted 14 December, 2020; originally announced December 2020.

Comments: 17 pages, 4 figures

Journal ref: Nature Physics 18 (2022) 406

Investigating phase transitions from local crystallographic analysis based on machine learning of atomic environments

Authors: Rama K. Vasudevan, Maxim Ziatdinov, Lukas Vlcek, Anna N. Morozovska, Eugene A. Eliseev, Shi-Ze Yang, Yongji Gong, Pulickel Ajayan, Wu Zhou, Matthew F. Chisholm, Sergei V. Kalinin

Abstract: Traditionally, phase transitions are explored using a combination of macroscopic functional characterization and scattering techniques, providing insight into average properties and symmetries of the lattice but local atomic level mechanisms during phase transitions generally remain unknown. Here we explore the mechanisms of a phase transition between the trigonal prismatic and distorted octahedra… ▽ More Traditionally, phase transitions are explored using a combination of macroscopic functional characterization and scattering techniques, providing insight into average properties and symmetries of the lattice but local atomic level mechanisms during phase transitions generally remain unknown. Here we explore the mechanisms of a phase transition between the trigonal prismatic and distorted octahedral phases of layered chalogenides in the MoS2 ReS2 system from the observations of local degrees of freedom, namely atomic positions by Scanning Transmission Electron Microscopy (STEM). We employ local crystallographic analysis based on machine learning of atomic environments to build a picture of the transition from the atomic level up and determine local and global variables controlling the local symmetry breaking. In particular, we argue that the dependence of the average symmetry breaking distortion amplitude on global and local concentration can be used to separate local chemical and global electronic effects on transition. This approach allows exploring atomic mechanisms beyond the traditional macroscopic descriptions, utilizing the imaging of compositional fluctuations in solids to explore phase transitions over a range of realized and observed local stoichiometries and atomic configurations. △ Less

Submitted 17 June, 2020; originally announced June 2020.

Comments: 5 figures, 20 pages including supplementary

Radio frequency polarization modulation based on an optical frequency comb

Authors: Ruixue Zhang, Yiming Gong, Matthew W. Day, Dong Sun, Steven T. Cundiff

Abstract: We propose a method to generate stabilized radio-frequency polarization modulation based on optical frequency combs. Two pulse trains with the same repetition rate and different offset frequencies generate arbitrary polarization states that are modulated at the offset frequency difference. Long-term stability of the polarization modulation is demonstrated with the modulation frequency at frep/2. M… ▽ More We propose a method to generate stabilized radio-frequency polarization modulation based on optical frequency combs. Two pulse trains with the same repetition rate and different offset frequencies generate arbitrary polarization states that are modulated at the offset frequency difference. Long-term stability of the polarization modulation is demonstrated with the modulation frequency at frep/2. Modulation at frep/4 is also demonstrated to show the flexibility of the technique. We employ an electrical delay line to fine-tune the polarization states that constitute the time-dependent modulation. △ Less

Submitted 3 June, 2020; originally announced June 2020.

Journal ref: Rev. Sci. Instr. 91, 083111 (2020);

Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6

Authors: Wanping Cai, Hualei Sun, Wei Xia, Changwei Wu, Ying Liu, Jia Yu, Junjie Yin, Hui Liu, Yu Gong, Dao-Xin Yao, Yanfeng Guo, Meng Wang

Abstract: The discovery of intrinsic magnetism in atomically thin two-dimensional transition-metal trichalcogenides has attracted intense research interest due to the exotic properties of magnetism and potential applications in devices. Pressure has proven to be an effective tool to manipulate the crystal and electronic structures of the materials. Here, we report investigations on ferromagnetic van der Waa… ▽ More The discovery of intrinsic magnetism in atomically thin two-dimensional transition-metal trichalcogenides has attracted intense research interest due to the exotic properties of magnetism and potential applications in devices. Pressure has proven to be an effective tool to manipulate the crystal and electronic structures of the materials. Here, we report investigations on ferromagnetic van der Waals Cr2Si2Te6 via high-pressure synchrotron x-ray diffraction, electrical resistance, Hall resistance, and magnetoresistance measurements. Under compression, Cr2Si2Te6 simultaneously undergoes a structural transition, emergence of superconductivity at 3 K, sign change of the magnetoresistance, and dramatic change of the Hall coefficient at ~8 GPa. The superconductivity persists up to the highest measured pressure of 47.1 GPa with a maximum Tc = 4.5 K at ~30 GPa. The discovery of superconductivity in the two-dimensional van der Waals ferromagnetic Cr-based Cr2Si2Te6 provides new perspectives to explore superconductivity and the interplay between superconductivity and magnetism. △ Less

Submitted 11 December, 2019; originally announced December 2019.

Comments: 13 pages, 4 figures in the main article and 5 figures in the supplementary file

Journal ref: Phys. Rev. B 102, 144525 (2020)

Finite Temperature Behaviors of q-deformed Fermi Gases

Authors: Xun Huang, Xu-Yang Hou, Yan Gong, Hao Guo

Abstract: During the last three decades, non-standard statistics for indistinguishable quantum particles has attracted broad attentions and research interests from many institutions. Among these new types of statistics, the q-deformed Bose and Fermi statistics, originated from the study of quantum algebra, are being applied in more and more physical systems. In this paper, we construct a q-deformed generali… ▽ More During the last three decades, non-standard statistics for indistinguishable quantum particles has attracted broad attentions and research interests from many institutions. Among these new types of statistics, the q-deformed Bose and Fermi statistics, originated from the study of quantum algebra, are being applied in more and more physical systems. In this paper, we construct a q-deformed generalization of the BCS-Leggett theory for ultracold Fermi gases based on our previously constructed q-deformed BCS theory. Some interesting features of this q-deformed interacting quantum gas are obtained by numerical analysis. For example, in the ordinary Bose-Einstein Condensation regime, the gas presents a fermionic feature instead of bosonic feature if the deformation parameter is tuned suitably, which might be referred to as the q-induced ``Bose-Fermi'' crossover. Conversely, a weak sign of the ``Fermi-Bose'' crossover is also found in the ordinary weak fermionic regime. △ Less

Submitted 29 September, 2019; originally announced September 2019.

Comments: 8 pages, 4 figures

Journal ref: Modern Physics Letters B 33, 1950294 (2019)

Design of reversible low-field magnetocaloric effect at room temperature in hexagonal MnMX ferromagnets

Authors: Jun Liu, Yurong You, Ivan Batashev, Yuanyuan Gong, Xinmin You, Bowei Huang, Fengqi Zhang, Xuefei Miao, Feng Xu, Niels van Dijk, Ekkes Brück

Abstract: Giant magnetocaloric effect is widely achieved in hexagonal MnMX-based (M = Co or Ni, X = Si or Ge) ferromagnets at their first-order magnetostructural transition. However, the thermal hysteresis and the low sensitivity of the magnetostructural transition to the magnetic field inevitably lead to a sizeable irreversibility of the low-field magnetocaloric effect. In this work, we show an alternative… ▽ More Giant magnetocaloric effect is widely achieved in hexagonal MnMX-based (M = Co or Ni, X = Si or Ge) ferromagnets at their first-order magnetostructural transition. However, the thermal hysteresis and the low sensitivity of the magnetostructural transition to the magnetic field inevitably lead to a sizeable irreversibility of the low-field magnetocaloric effect. In this work, we show an alternative way to realize a reversible low-field magnetocaloric effect in MnMX-based alloys by taking advantage of the second-order phase transition. With introducing Cu into Co in MnCoGe alloy, the martensitic transition is stabilized at high temperature, while the Curie temperature of the orthorhombic phase is reduced to room temperature. As a result, a second-order magnetic transition with negligible thermal hysteresis and a large magnetization change can be observed, enabling a large reversible magnetocaloric effect. By both calorimetric and direct measurements, a reversible adiabatic temperature change of about 1 K is obtained under a field change of 0-1 T at 304 K, which is larger than that obtained in a first-order magnetostructural transition. To get a better insight into the origin of these experimental results, first-principles calculations are carried out to characterize the chemical bonds and the magnetic exchange interaction. Our work provides a new understanding of the MnCoGe alloy and indicates a feasible route to improve the reversibility of the low-field magnetocaloric effect in the MnMX system. △ Less

Submitted 19 September, 2019; originally announced September 2019.

Comments: 21 pages, 9 figures

Journal ref: Phys. Rev. Applied 13, 054003 (2020)

Order and randomness in dopant distributions: exploring the thermodynamics of solid solutions from atomically resolved imaging

Authors: Lukas Vlcek, Shize Yang, Yongji Gong, Pulickel Ajayan, Wu Zhou, Matthew F. Chisholm, Maxim Ziatdinov, Rama K. Vasudevan, Sergei V. Kalinin

Abstract: Exploration of structure-property relationships as a function of dopant concentration is commonly based on mean field theories for solid solutions. However, such theories that work well for semiconductors tend to fail in materials with strong correlations, either in electronic behavior or chemical segregation. In these cases, the details of atomic arrangements are generally not explored and analyz… ▽ More Exploration of structure-property relationships as a function of dopant concentration is commonly based on mean field theories for solid solutions. However, such theories that work well for semiconductors tend to fail in materials with strong correlations, either in electronic behavior or chemical segregation. In these cases, the details of atomic arrangements are generally not explored and analyzed. The knowledge of the generative physics and chemistry of the material can obviate this problem, since defect configuration libraries as stochastic representation of atomic level structures can be generated, or parameters of mesoscopic thermodynamic models can be derived. To obtain such information for improved predictions, we use data from atomically resolved microscopic images that visualize complex structural correlations within the system and translate them into statistical mechanical models of structure formation. Given the significant uncertainties about the microscopic aspects of the material's processing history along with the limited number of available images, we combine model optimization techniques with the principles of statistical hypothesis testing. We demonstrate the approach on data from a series of atomically-resolved scanning transmission electron microscopy images of Mo$_x$Re$_{1-x}$S$_2$ at varying ratios of Mo/Re stoichiometries, for which we propose an effective interaction model that is then used to generate atomic configurations and make testable predictions at a range of concentrations and formation temperatures. △ Less

Submitted 11 July, 2019; originally announced July 2019.

Comments: 26 pages, 8 figures

Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2

Authors: Yurong You, Yuanyuan Gong, Hang Li, Zefang Li, Mengmei Zhu, Jiaxuan Tang, Enke Liu, Yuan Yao, Guizhou Xu, Feng Xu, Wenhong Wang

Abstract: In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy. The Hall effect and magnetoresistance varied periodically when the external magnetic field rotated in the ac (or bc) plane, while the PTHE emerged and maintained robust with field swept across the hard-… ▽ More In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy. The Hall effect and magnetoresistance varied periodically when the external magnetic field rotated in the ac (or bc) plane, while the PTHE emerged and maintained robust with field swept across the hard-magnetized ab plane. The PTHE covers the whole temperature region below Tc (~150 K) and a comparatively large value is observed at 100 K. Emergence of an internal gauge field was proposed to explain the origin of this large PTHE, which is either generated by the possible topological domain structure of uniaxial Fe3GeTe2 or the non-coplanar spin structure formed during the in-plane magnetization. Our results promisingly provide an alternative detection method to the in-plane skyrmion formation and may bring brand-new prospective to magneto-transport studies in condensed matter physics. △ Less

Submitted 22 July, 2019; v1 submitted 4 July, 2019; originally announced July 2019.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. B 100, 134441 (2019)

Dimensional crossover and topological nature of the thin films of a three-dimensional topological insulator by band gap engineering

Authors: Zhenyu Wang, Tong Zhou, Tian Jiang, Hongyi Sun, Yunyi Zang, Yan Gong, Jianghua Zhang, Mingyu Tong, Xiangnan Xie, Qihang Liu, Chaoyu Chen, Ke He, Qi-Kun Xue

Abstract: Identification and control of topological phases in topological thin films offer great opportunity for fundamental research and the fabrication of topology-based devices. Here, combining molecular beam epitaxy, angle-resolved photoemission spectroscopy and ab-initio calculations, we investigate the electronic structure evolution in (Bi1-xInx)2Se3 films with thickness from 2 to 13 quintuple layers.… ▽ More Identification and control of topological phases in topological thin films offer great opportunity for fundamental research and the fabrication of topology-based devices. Here, combining molecular beam epitaxy, angle-resolved photoemission spectroscopy and ab-initio calculations, we investigate the electronic structure evolution in (Bi1-xInx)2Se3 films with thickness from 2 to 13 quintuple layers. We identify several phases with their characteristic topological nature and evolution between them, i.e., dimensional crossover from a three-dimensional topological insulator with gapless surface state to its two-dimensional counterpart with gapped surface state, and topological phase transition from topological insulator to a normal semiconductor with increasing In concentration x. Furthermore, by introducing In alloying as an external knob of band gap engineering, we experimentally demonstrated the trivial topological nature of Bi2Se3 thin films (below 6 quintuple layers) as two-dimensional gapped systems, in consistent with our theoretical calculations. Our results provide not only a comprehensive phase diagram of (Bi1-xInx)2Se3 and a route to control its phase evolution, but also a practical way to experimentally determine the topological properties of a gapped compound by topological phase transition and band gap engineering. △ Less

Submitted 16 May, 2019; originally announced May 2019.

Comments: 24 pages, 4 figures

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Authors: Qixun Guo, Yu Wu, Longxiang Xu, Yan Gong, Yunbo Ou, Yang Liu, Leilei Li, Jiao Teng, Yu Yan, Gang Han, Dongwei Wang, Lihua Wang, Shibing Long, Bowei Zhang, Xun Cao, Shanwu Yang, Xuemin Wang, Yizhong Huang, Tao Liu, Guanghua Yu, Ke He

Abstract: Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 fami… ▽ More Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications. △ Less

Submitted 9 January, 2019; originally announced January 2019.

Comments: 16 pages, 4 figures, 1 table

Correlating 3D atomic defects and electronic properties of 2D materials with picometer precision

Authors: Xuezeng Tian, Dennis S. Kim, Shize Yang, Christopher J. Ciccarino, Yongji Gong, Yongsoo Yang, Yao Yang, Blake Duschatko, Yakun Yuan, Pulickel M. Ajayan, Juan-Carlos Idrobo, Prineha Narang, Jianwei Miao

Abstract: The exceptional electronic, optical and chemical properties of two-dimensional materials strongly depend on the 3D atomic structure and crystal defects. Using Re-doped MoS2 as a model, here we develop scanning atomic electron tomography (sAET) to determine the 3D atomic positions and crystal defects such as dopants, vacancies and ripples with a precision down to 4 picometers. We measure the 3D bon… ▽ More The exceptional electronic, optical and chemical properties of two-dimensional materials strongly depend on the 3D atomic structure and crystal defects. Using Re-doped MoS2 as a model, here we develop scanning atomic electron tomography (sAET) to determine the 3D atomic positions and crystal defects such as dopants, vacancies and ripples with a precision down to 4 picometers. We measure the 3D bond distortion and local strain tensor induced by single dopants for the first time. By directly providing experimental 3D atomic coordinates to density functional theory (DFT), we obtain more truthful electronic band structures than those derived from conventional DFT calculations relying on relaxed 3D atomic models, which is confirmed by photoluminescence measurements. We anticipate that sAET is not only generally applicable to the determination of the 3D atomic coordinates of 2D materials, heterostructures and thin films, but also could transform ab initio calculations by using experimental 3D atomic coordinates as direct input to better predict and discover new physical, chemical and electronic properties. △ Less

Submitted 8 September, 2019; v1 submitted 3 January, 2019; originally announced January 2019.

Comments: 44 pages, 18 figures

Experimental realization of an intrinsic magnetic topological insulator

Authors: Yan Gong, Jingwen Guo, Jiaheng Li, Kejing Zhu, Menghan Liao, Xiaozhi Liu, Qinghua Zhang, Lin Gu, Lin Tang, Xiao Feng, Ding Zhang, Wei Li, Canli Song, Lili Wang, Pu Yu, Xi Chen, Yayu Wang, Hong Yao, Wenhui Duan, Yong Xu, Shou-Cheng Zhang, Xucun Ma, Qi-Kun Xue, Ke He

Abstract: Intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remains elusive experimentally so far. Here, we report the experimental realization of high-quality thin films of an intrinsic magnetic TI---MnBi$_2$Te… ▽ More Intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remains elusive experimentally so far. Here, we report the experimental realization of high-quality thin films of an intrinsic magnetic TI---MnBi$_2$Te$_4$---by alternate growth of a Bi$_2$Te$_3$ quintuple-layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators in a well-controlled way. △ Less

Submitted 20 September, 2018; originally announced September 2018.

Journal ref: Chin. Phys. Lett. 36, 076801 (2019)

Two-dimensional spinodal interface in one-step grown graphene-molybdenum carbide heterostructures

Authors: Jia-Bin Qiao, Yue Gong, Haiwen Liu, Jin-An Shi, Lin Gu, Lin He

Abstract: Heterostructures made by stacking different materials on top of each other are expected to exhibit unusual properties and new phenomena. Interface of the heterostructures plays a vital role in determining their properties. Here, we report the observation of a two-dimensional (2D) spinodal interface in graphene-molybdenum carbide (α-Mo2C) heterostructures, which arises from spinodal decomposition o… ▽ More Heterostructures made by stacking different materials on top of each other are expected to exhibit unusual properties and new phenomena. Interface of the heterostructures plays a vital role in determining their properties. Here, we report the observation of a two-dimensional (2D) spinodal interface in graphene-molybdenum carbide (α-Mo2C) heterostructures, which arises from spinodal decomposition occurring at the heterointerface, by using scanning tunneling microscopy. Our experiment demonstrates that the 2D spinodal interface modulates graphene into whispering gallery resonant networks filled with quasi-bound states of massless Dirac fermions. Moreover, below the superconducting transition temperature of the underlying α-Mo2C, the 2D spinodal interface behaves as disorders, resulting in the breakdown of the proximity-induced superconductivity in graphene. Our result sheds new light on tuning properties of heterostructures based on interface engineering. △ Less

Submitted 9 May, 2018; originally announced May 2018.

Comments: 4 figures in main text

Journal ref: Phys. Rev. Materials 2, 054002 (2018)

Tunable magnetic and transport properties of Mn3Ga thin films on Ta/Ru seedlayer

Authors: Fang Hu, Guizhou Xu, Yurong You, Zhi Zhang, Zhan Xu, Yuanyuan Gong, Er Liu, Hongguo Zhang, Enke Liu, Wenhong Wang, Feng Xu

Abstract: Hexagonal D019-type Mn3Z alloys that possess large anomalous and topological-like Hall effects have attracted much attention due to their great potential in the antiferromagnetic spintronic devices. Here, we report the preparation of Mn3Ga film in both tetragonal and hexagonal phases with a tuned Ta/Ru seed layer on the thermally oxidized Si substrate. A large coercivity together with a large anom… ▽ More Hexagonal D019-type Mn3Z alloys that possess large anomalous and topological-like Hall effects have attracted much attention due to their great potential in the antiferromagnetic spintronic devices. Here, we report the preparation of Mn3Ga film in both tetragonal and hexagonal phases with a tuned Ta/Ru seed layer on the thermally oxidized Si substrate. A large coercivity together with a large anomalous Hall resistivity is found in the Ta-only sample with mixed tetragonal phase. By increasing the thickness of Ru layer, the tetragonal phase gradually disappears and a relatively pure hexagonal phase is obtained in the Ta(5)/Ru(30) buffered sample. Further magnetic and transport measurements revealed that the anomalous Hall conductivity nearly vanishes in the pure hexagonal sample, while an abnormal asymmetric hump structure emerges in the low field region. The extracted additional Hall term is robust in a large temperature range and presents a sign reversal above 200K. The abnormal Hall properties are proposed to be closely related with the frustrated spin structure of D019 Mn3Ga. △ Less

Submitted 3 January, 2018; originally announced January 2018.

Superconductivity in Few-Layer Stanene

Authors: Menghan Liao, Yunyi Zang, Zhaoyong Guan, Haiwei Li, Yan Gong, Kejing Zhu, Xiao-Peng Hu, Ding Zhang, Yong Xu, Ya-Yu Wang, Ke He, Xu-Cun Ma, Shou-Cheng Zhang, Qi-Kun Xue

Abstract: A single atomic slice of α-tin-stanene-has been predicted to host quantum spin Hall effect at room temperature, offering an ideal platform to study low-dimensional and topological physics. While recent research has intensively focused on monolayer stanene, the quantum size effect in few-layer stanene could profoundly change material properties, but remains unexplored. By exploring the layer degree… ▽ More A single atomic slice of α-tin-stanene-has been predicted to host quantum spin Hall effect at room temperature, offering an ideal platform to study low-dimensional and topological physics. While recent research has intensively focused on monolayer stanene, the quantum size effect in few-layer stanene could profoundly change material properties, but remains unexplored. By exploring the layer degree of freedom, we unexpectedly discover superconductivity in few-layer stanene down to a bilayer grown on PbTe, while bulk α-tin is not superconductive. Through substrate engineering, we further realize a transition from a single-band to a two-band superconductor with a doubling of the transition temperature. In-situ angle resolved photoemission spectroscopy (ARPES) together with first-principles calculations elucidate the corresponding band structure. Interestingly, the theory also indicates the existence of a topologically nontrivial band. Our experimental findings open up novel strategies for constructing two-dimensional topological superconductors. △ Less

Submitted 4 October, 2018; v1 submitted 11 December, 2017; originally announced December 2017.

Comments: 17 pages, 10 figures

Journal ref: Nature Physics 14, 344-348 (2018)

Realizing an Epitaxial Stanene with an Insulating Bandgap

Authors: Yunyi Zang, Tian Jiang, Yan Gong, Zhaoyong Guan, Menghan Liao, Zhe Li, Lili Wang, Wei Li, Canli Song, Ding Zhang, Yong Xu, Ke He, Xucun Ma, Shou-Cheng Zhang, Qi-Kun Xue

Abstract: Stanene, a single atomic layer of Sn in a honeycomb lattice, is predicted a candidate wide bandgap two-dimensional (2D) topological insulator and can host intriguing topological states of matter such as quantum anomalous Hall effect and topological superconductivity with different surface modifications. Despite intensive research efforts, one still cannot obtain bulk-insulating stanene samples-a p… ▽ More Stanene, a single atomic layer of Sn in a honeycomb lattice, is predicted a candidate wide bandgap two-dimensional (2D) topological insulator and can host intriguing topological states of matter such as quantum anomalous Hall effect and topological superconductivity with different surface modifications. Despite intensive research efforts, one still cannot obtain bulk-insulating stanene samples-a prerequisite for any transport studies and applications of stanene. Here we show the experimental realization of an epitaxial stanene with an insulating bulk bandgap by using PbTe(111) substrates. With low-temperature molecular beam epitaxy, we are able to grow single layer stanene on PbTe(111). In-situ angle-resolved photoemission spectroscopy shows the characteristic stanene bands with its Fermi level lying in the bandgap. Doping Sr in PbTe removes the substrate states located in the stanene gap, resulting in a stanene sample with truly insulating bulk. This experimental progress paves the way for studies of stanene-based topological quantum effects. △ Less

Submitted 4 October, 2018; v1 submitted 19 November, 2017; originally announced November 2017.

Comments: 17 pages, 9 figures

Journal ref: Adv. Funct. Mater. 2018, 1802723

Dimensional Crossover Induced Topological Hall Effect in a Magnetic Topological Insulator

Authors: Chang Liu, Yunyi Zang, Wei Ruan, Yan Gong, Ke He, Xucun Ma, Qi-Kun Xue, Yayu Wang

Abstract: We report transport studies of Mn-doped Bi2Te3 topological insulator (TI) films with accurately controlled thickness grown by molecular beam epitaxy. We find that films thicker than 5 quintuple-layer (QL) exhibit the usual anomalous Hall effect for magnetic TIs. When the thickness is reduced to 4 QL, however, characteristic features associated with the topological Hall effect (THE) emerge. More su… ▽ More We report transport studies of Mn-doped Bi2Te3 topological insulator (TI) films with accurately controlled thickness grown by molecular beam epitaxy. We find that films thicker than 5 quintuple-layer (QL) exhibit the usual anomalous Hall effect for magnetic TIs. When the thickness is reduced to 4 QL, however, characteristic features associated with the topological Hall effect (THE) emerge. More surprisingly, the THE vanishes again when the film thickness is further reduced to 3 QL. Theoretical calculations demonstrate that the coupling between the top and bottom surface states at the dimensional crossover regime stabilizes the magnetic skyrmion structure that is responsible for the THE. △ Less

Submitted 24 September, 2017; originally announced September 2017.

Comments: 4 figures, with supplementary materials, to appear in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 119, 176809 (2017)

Metallic vanadium disulfide nanosheets as a platform material for multifunctional electrode applications

Authors: Qingqing Ji, Cong Li, Jingli Wang, Jingjing Niu, Yue Gong, Zhepeng Zhang, Qiyi Fang, Yu Zhang, Jianping Shi, Lei Liao, Xiaosong Wu, Lin Gu, Zhongfan Liu, Yanfeng Zhang

Abstract: Nano-thick metallic transition metal dichalcogenides such as VS$_{2}$ are essential building blocks for constructing next-generation electronic and energy-storage applications, as well as for exploring unique physical issues associated with the dimensionality effect. However, such 2D layered materials have yet to be achieved through either mechanical exfoliation or bottom-up synthesis. Herein, we… ▽ More Nano-thick metallic transition metal dichalcogenides such as VS$_{2}$ are essential building blocks for constructing next-generation electronic and energy-storage applications, as well as for exploring unique physical issues associated with the dimensionality effect. However, such 2D layered materials have yet to be achieved through either mechanical exfoliation or bottom-up synthesis. Herein, we report a facile chemical vapor deposition route for direct production of crystalline VS$_{2}$ nanosheets with sub-10 nm thicknesses and domain sizes of tens of micrometers. The obtained nanosheets feature spontaneous superlattice periodicities and excellent electrical conductivities (~3$\times$10$^{3}$ S cm$^{-1}$), which has enabled a variety of applications such as contact electrodes for monolayer MoS$_{2}$ with contact resistances of ~1/4 to that of Ni/Au metals, and as supercapacitor electrodes in aqueous electrolytes showing specific capacitances as high as 8.6$\times$10$^{2}$ F g$^{-1}$. This work provides fresh insights into the delicate structure-property relationship and the broad application prospects of such metallic 2D materials. △ Less

Submitted 28 March, 2017; originally announced March 2017.

Comments: 23 pages, 5 figues

One-step synthesis of van der Waals heterostructures of graphene and 2D superconducting a-Mo2C

Authors: Jia-Bin Qiao, Yue Gong, Wei-Jie Zuo, Yi-Cong Wei, Dong-Lin Ma, Hong Yang, Ning Yang, Kai-Yao Qiao, Jin-An Shi, Lin Gu, Lin He

Abstract: Assembling different two-dimensional (2D) crystals, covering a very broad range of properties, into van der Waals (vdW) heterostructures enables the unprecedented possibilities for combining the best of different ingredients in one objective material. So far, metallic, semiconducting, and insulating 2D crystals have been used successfully in making functional vdW heterostructures with properties b… ▽ More Assembling different two-dimensional (2D) crystals, covering a very broad range of properties, into van der Waals (vdW) heterostructures enables the unprecedented possibilities for combining the best of different ingredients in one objective material. So far, metallic, semiconducting, and insulating 2D crystals have been used successfully in making functional vdW heterostructures with properties by design. Here, we expand 2D superconducting crystals as a building block of the vdW hererostructures. A one-step growth of large-scale high-quality vdW heterostructures of graphene and 2D superconducting a-Mo2C by using chemical vapor deposition (CVD) method is reported. The superconductivity and its 2D nature of the heterostructures are characterized by our scanning tunneling microscopy (STM) measurements. This adds the 2D superconductivity, the most attractive property of condensed matter physics, to the vdW heterostructures. △ Less

Submitted 6 March, 2017; originally announced March 2017.

Comments: 4 Figures in main text

Journal ref: Phys. Rev. B 95, 201403 (2017)

Tunneling Spectroscopy of Atomically-Thin Al2O3 Films for Tunnel Junctions

Authors: Jamie Wilt, Youpin Gong, Ming Gong, Feifan Su, Huikai Xu, Ridwan Sakidja, Alan Elliot, Rongtao Lu, Shiping Zhao, Siyuan Han, Judy Wu

Abstract: Metal-Insulator-Metal tunnel junctions (MIMTJ) are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically-thin barriers demanded for enhanced quantum coherence. In this work, we employed in situ scanning tunneling spe… ▽ More Metal-Insulator-Metal tunnel junctions (MIMTJ) are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically-thin barriers demanded for enhanced quantum coherence. In this work, we employed in situ scanning tunneling spectroscopy (STS) along with molecular dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic layer deposition (ALD). We found that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically-thin Al2O3 tunnel barrier with a high quality M-I interface and a significantly enhanced barrier height compared to thermal AlOx. These properties, corroborated by fabricated Josephson Junctions, show that ALD Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next-generation of MIMTJs. △ Less

Submitted 27 January, 2017; originally announced January 2017.

Comments: 19 pages, 4 figures

Journal ref: Phys. Rev. Applied 7, 064022 (2017)

Designing compensated magnetic states in tetragonal Mn3Ge-based alloys

Authors: Yurong You, Guizhou Xu, Fang Hu, Yuanyuan Gong, Er Liu, Feng Xu

Abstract: Magnetic compensated state attracted much interests due to the observed large exchange bias and large coercivity, and its potential applications in the antiferromagnetic spintronics with merit of no stray field. In this work, by ab initio calculations with KKR-CPA for the treatment of random substitution, we obtain the complete compensated states in the Ni (Pd, Pt) doped Mn3Ge-based D022-type tetr… ▽ More Magnetic compensated state attracted much interests due to the observed large exchange bias and large coercivity, and its potential applications in the antiferromagnetic spintronics with merit of no stray field. In this work, by ab initio calculations with KKR-CPA for the treatment of random substitution, we obtain the complete compensated states in the Ni (Pd, Pt) doped Mn3Ge-based D022-type tetragonal Heusler alloys. We find the total moment change is asymmetric across the compensation point (at ~ x = 0.3) in Mn3-xYxGe (Y = Ni, Pd, Pt), which is highly conforming to that experimentally observed in Mn3Ga. In addition, an uncommon discontinuous jump is observed across the critical zero-moment point, indicating that some non-trivial properties can emerge at this point. Further electronic analysis for the three compensation compositions reveals large spin polarizations, together with the high Curie temperature of the host Mn3Ge, making them promising candidates for spin transfer torque applications. △ Less

Submitted 17 October, 2016; originally announced October 2016.

Journal ref: Journal of Magnetism and Magnetic Materials-2017

Rejuvenation of metallic glasses under high pressure

Authors: C. Wang, Z. Z. Yang, T. Ma, Y. T. Sun, Y. Y. Yin, Y. Gong, L. Gu, P. Wen, P. W. Zhu, Y. W. Long, X. H. Yu, C. Q. Jin, W. H. Wang, H. Y. Bai

Abstract: Modulating energy states of metallic glasses (MGs) is significant in understanding the nature of glasses and control their properties. In this study, we show that rejuvenation in enthalpy can be achieved and preserved in bulk MGs by using high pressure (HP) annealing, which is a controllable method to continuously alter the energy states of MGs. Contrary to the decrease in enthalpy by conventional… ▽ More Modulating energy states of metallic glasses (MGs) is significant in understanding the nature of glasses and control their properties. In this study, we show that rejuvenation in enthalpy can be achieved and preserved in bulk MGs by using high pressure (HP) annealing, which is a controllable method to continuously alter the energy states of MGs. Contrary to the decrease in enthalpy by conventional annealing at ambient pressure, such rejuvenation can occur and be enhanced by increasing both of annealing temperature and pressure. By using double aberration corrected scanning transmission electron microscopy, it is revealed that the rejuvenation, which is attributed to coupling effect of high pressure and high temperature, originates from the microstructural change that involves "negative flow units" with a higher atomic packing density compared to that of the elastic matrix of MGs. The results demonstrate that HP annealing is an effective way to rejuvenate MGs into higher energy states, and it may assist in understanding the microstructural origin of the rejuvenation in MGs. △ Less

Submitted 26 September, 2016; originally announced September 2016.

Comments: 24 pages, 8 figures

Valley Trion Dynamics in Monolayer MoSe$_2$

Authors: Feng Gao, Yongji Gong, Michael Titze, Raybel Almeida, Pulickel M. Ajayan, Hebin Li

Abstract: Charged excitons called trions play an important role in the fundamental valley dynamics in the newly emerging 2D semiconductor materials. We used ultrafast pump- probe spectroscopy to study the valley trion dynamics in a MoSe$_2$ monolayer grown by using chemical vapor deposition. The dynamics display an ultrafast trion formation followed by a non-exponential decay. The measurements at different… ▽ More Charged excitons called trions play an important role in the fundamental valley dynamics in the newly emerging 2D semiconductor materials. We used ultrafast pump- probe spectroscopy to study the valley trion dynamics in a MoSe$_2$ monolayer grown by using chemical vapor deposition. The dynamics display an ultrafast trion formation followed by a non-exponential decay. The measurements at different pump fluences show that the trion decay dynamics become slower as the excitation density increases. The observed trion dynamics and the associated density dependence are a result of the trapping by two defect states as being the dominating decay mechanism. The simulation based on a set of rate equations reproduces the experimental data for different pump fluences. Our results reveal the important trion dynamics and identify the trapping by defect states as the primary trion decay mechanism in monolayer MoSe$_2$ under the excitation densities used in our experiment. △ Less

Submitted 14 April, 2016; originally announced April 2016.

Comments: 16 pages, 4 figures

Journal ref: Phys. Rev. B 94, 245413 (2016)

Application of Mythen Detector In-situ XRD Study on The Thermal Expansion Behavior of Metal Indium

Authors: Rong Du, Zhongjun Chen, Quan Cai, Jianlong Fu, Yu Gong, Zhonghua Wu

Abstract: A Mythen detector has been equipped at the beamline 4B9A of Beijing Synchrotron Radiation Facility, which can be used for in-situ real-time measurement of X-ray diffraction (XRD) full profiles. In this paper, the thermal expansion behavior of metal indium has been studied by using the in-situ XRD technique with the Mythen detector. The indium film was heated from 30 to 160 °C with a heating rate o… ▽ More A Mythen detector has been equipped at the beamline 4B9A of Beijing Synchrotron Radiation Facility, which can be used for in-situ real-time measurement of X-ray diffraction (XRD) full profiles. In this paper, the thermal expansion behavior of metal indium has been studied by using the in-situ XRD technique with the Mythen detector. The indium film was heated from 30 to 160 °C with a heating rate of 2 °C/min. The in-situ XRD full-profiles were collected with a rate of one profile per 10 seconds. Rietveld refinement was used to extract the structural parameters. The results demonstrate that the thermal expansion of metal indium is nonlinear especially when the sample temperature was close to its melting point (156.5 °C). The expansion of a-axis and the contraction of c-axis of the tetragonal unit cell of metallic indium can be well described by biquadratic and cubic polynomials, respectively. The tetragonal unit cell presents a tendency to become cubic one with the increase of temperature but without detectable phase change. This study is not only beneficial to the application of metal indium, but also exhibits the capacity of in-situ time-resolved XRD experiments at the X-ray diffraction station of BSRF. △ Less

Submitted 17 August, 2015; originally announced August 2015.

Comments: 7 pages, 8 figures

Detangling Extrinsic and Intrinsic Hysteresis for Detecting Dynamic Switch of Electric Dipoles using Graphene Field-Effect Transistors on Ferroelectric Gates

Authors: Chunrui Ma, Youpin Gong, Rongtao Lu, Emery Brown, Beihai Ma, Jun Li, Judy Wu

Abstract: A transition in source-drain current vs back gate voltage ID - VBG characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin films has been observed on graphene field-effect transistors on Pb0.92La0.08Zr0.52Ti0.48O3 gates GFET/PLZT-Gate during a vacuum annealing process developed to… ▽ More A transition in source-drain current vs back gate voltage ID - VBG characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin films has been observed on graphene field-effect transistors on Pb0.92La0.08Zr0.52Ti0.48O3 gates GFET/PLZT-Gate during a vacuum annealing process developed to systematically remove the polar molecules adsorbed on the GFET channel surface. This allows detangle of the extrinsic and intrinsic hysteresis on GFET/PLZT-gate devices and detection of the dynamic switch of electric dipoles using GFETs, taking advantage of their high gating efficiency on ferroelectric gate. A model of the charge trapping and pinning mechanism is proposed to successfully explain the transition. In response to pulsed VBG trains of positive, negative, as well as alternating polarities, respectively, the source-drain current ID variation is instantaneous with the response amplitude following the ID - VBG loops measured by DC VBG with consideration of the remnant polarization after a given VBG pulse when the gate electric field exceeds the coercive field of the PLZT. A detection sensitivity of around 212 dipole/um2 has been demonstrated at room temperature, suggesting the GFET/ferroelectric-gate devices provide a promising high-sensitivity scheme for uncooled detection of electrical dipole dynamic switch. △ Less

Submitted 31 May, 2015; originally announced June 2015.

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode

Authors: Yexin Deng, Zhe Luo, Nathan J. Conrad, Han Liu, Yongji Gong, Sina Najmaei, Pulickel M. Ajayan, Jun Lou, Xianfan Xu, Peide D. Ye

Abstract: Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm2/Vs, as well as phototransistors, have been demonstrated on few-layer black phosphorus,… ▽ More Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm2/Vs, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependence direct bandgap. However, p-n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p-n heterojunction. Upon illumination, these ultra-thin p-n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm, and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p-n diodes show promise for broadband photodetection and solar energy harvesting. △ Less

Submitted 13 July, 2014; originally announced July 2014.

Comments: 37 pages

Journal ref: ACS Nano, 2014, 8(8), pp. 8292-8299

Hierarchical structure and biomineralization in cricket tooth

Authors: Xueqing Xing, Yu Gong, Quan Cai, Guang Mo, Rong Du, Zhongjun Chen, Zhonghua Wu

Abstract: Cricket is a truculent insect with stiff and sharp teeth as a fighting weapon. The structure and possible biomineralization of the cricket teeth are always interested. Synchrotron radiation X-ray fluorescence, X-ray diffraction and small angle X-ray scattering techniques were used to probe the element distribution, possible crystalline structures and size distribution of scatterers in cricket teet… ▽ More Cricket is a truculent insect with stiff and sharp teeth as a fighting weapon. The structure and possible biomineralization of the cricket teeth are always interested. Synchrotron radiation X-ray fluorescence, X-ray diffraction and small angle X-ray scattering techniques were used to probe the element distribution, possible crystalline structures and size distribution of scatterers in cricket teeth. Scanning electron microscope was used to observe the nanoscaled structure. The results demonstrate that Zn is the main heavy element in cricket teeth. The surface of the cricket teeth has a crystalline compound like ZnFe2(AsO4)2(OH)2(H2O)4. While, the interior of the teeth has a crystalline compound like ZnCl2, which is from the biomineralization. The ZnCl2-like biomineral forms nanoscaled microfibrils and their axial direction points at the top of tooth cusp. The microfibrils aggregate random into intermediate filaments, forming a hierarchical structure. A sketch map of the cricket tooth cusp was proposed and a detailed discussion was given in this paper. △ Less

Submitted 20 March, 2012; originally announced March 2012.

Comments: 5 pages, 7 figures. Already submitted to Chines Physics C

Phonon Mediated Off-Resonant Quantum Dot-Cavity Coupling

Authors: Arka Majumdar, Yiyang Gong, Erik D. Kim, Jelena Vuckovic

Abstract: A theoretical model for the phonon-mediated off-resonant coupling between a quantum dot and a cavity, under resonant excitation of the quantum dot, is presented. We show that the coupling is caused by electron-phonon interaction in the quantum dot and is enhanced by the cavity. We analyze recently observed resonant quantum dot spectroscopic data by our theoretical model. A theoretical model for the phonon-mediated off-resonant coupling between a quantum dot and a cavity, under resonant excitation of the quantum dot, is presented. We show that the coupling is caused by electron-phonon interaction in the quantum dot and is enhanced by the cavity. We analyze recently observed resonant quantum dot spectroscopic data by our theoretical model. △ Less

Submitted 14 December, 2010; originally announced December 2010.

Comments: 7 pages, 4 figures

Optical properties of the iron-arsenic superconductor BaFe1.85Co0.15As2

Authors: J. J. Tu, J. Li, W. Liu, A. Punnoose, Y. Gong, Y. H. Ren, L. J. Li, G. H. Cao, Z. A. Xu, C. C. Homes

Abstract: The transport and complex optical properties of the electron-doped iron-arsenic superconductor BaFe1.85Co0.15As2 with Tc = 25 K have been examined in the Fe-As planes above and below Tc. A Bloch-Gruneisen analysis of the resistivity yields a weak electron-phonon coupling constant lambda_ph ~ 0.2. The low-frequency optical response in the normal state appears to be dominated by the electron pocket… ▽ More The transport and complex optical properties of the electron-doped iron-arsenic superconductor BaFe1.85Co0.15As2 with Tc = 25 K have been examined in the Fe-As planes above and below Tc. A Bloch-Gruneisen analysis of the resistivity yields a weak electron-phonon coupling constant lambda_ph ~ 0.2. The low-frequency optical response in the normal state appears to be dominated by the electron pocket and may be described by a weakly-interacting Fermi liquid with a Drude plasma frequency of omega_p,D ~ 7840 cm-1 (~ 0.972 eV) and scattering rate 1/tau_D ~ 125 cm-1 (~ 15 meV) just above Tc. The frequency-dependent scattering rate 1/tau(omega) has kinks at ~ 12 and 55 meV that appear to be related to bosonic excitations. Below Tc the majority of the superconducting plasma frequency originates from the electron pocket and is estimated to be omega_p,S ~ 5200 cm-1 (lambda0 ~ 3000 Angstroms) for T << Tc, indicating that less than half the free carriers in the normal state have collapsed into the condensate, suggesting that this material is not in the clean limit. Supporting this finding is the observation that this material falls close to the universal scaling line for a BCS dirty-limit superconductor in the weak-coupling limit. There are two energy scales for the superconductivity in the optical conductivity and photo-induced reflectivity at Delta1 ~ 3.1 +/- 0.2 meV and Delta2 ~ 7.4 +/- 0.3 meV. This corresponds to either the gaping of the electron and hole pockets, respectively, or an anisotropic s-wave gap on the electron pocket; both views are consistent with the s+/- model. △ Less

Submitted 25 October, 2010; v1 submitted 18 August, 2010; originally announced August 2010.

Comments: Revised version (expanded discussion, additional references): 11 pages, one table and 8 figures

Journal ref: Phys. Rev. B 82, 174509 (2010) [10 pages]