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Condensed Matter > Materials Science

arXiv:1701.08143 (cond-mat)
[Submitted on 27 Jan 2017]

Title:Tunneling Spectroscopy of Atomically-Thin Al2O3 Films for Tunnel Junctions

Authors:Jamie Wilt, Youpin Gong, Ming Gong, Feifan Su, Huikai Xu, Ridwan Sakidja, Alan Elliot, Rongtao Lu, Shiping Zhao, Siyuan Han, Judy Wu
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Abstract:Metal-Insulator-Metal tunnel junctions (MIMTJ) are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically-thin barriers demanded for enhanced quantum coherence. In this work, we employed in situ scanning tunneling spectroscopy (STS) along with molecular dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic layer deposition (ALD). We found that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically-thin Al2O3 tunnel barrier with a high quality M-I interface and a significantly enhanced barrier height compared to thermal AlOx. These properties, corroborated by fabricated Josephson Junctions, show that ALD Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next-generation of MIMTJs.
Comments: 19 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1701.08143 [cond-mat.mtrl-sci]
  (or arXiv:1701.08143v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1701.08143
Journal reference: Phys. Rev. Applied 7, 064022 (2017)
Related DOI: https://doi.org/10.1103/PhysRevApplied.7.064022

Submission history

From: Jamie Wilt [view email]
[v1] Fri, 27 Jan 2017 18:33:51 UTC (1,042 KB)
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