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Condensed Matter > Materials Science

arXiv:1711.07035 (cond-mat)
[Submitted on 19 Nov 2017 (v1), last revised 4 Oct 2018 (this version, v2)]

Title:Realizing an Epitaxial Stanene with an Insulating Bandgap

Authors:Yunyi Zang, Tian Jiang, Yan Gong, Zhaoyong Guan, Menghan Liao, Zhe Li, Lili Wang, Wei Li, Canli Song, Ding Zhang, Yong Xu, Ke He, Xucun Ma, Shou-Cheng Zhang, Qi-Kun Xue
View a PDF of the paper titled Realizing an Epitaxial Stanene with an Insulating Bandgap, by Yunyi Zang and 14 other authors
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Abstract:Stanene, a single atomic layer of Sn in a honeycomb lattice, is predicted a candidate wide bandgap two-dimensional (2D) topological insulator and can host intriguing topological states of matter such as quantum anomalous Hall effect and topological superconductivity with different surface modifications. Despite intensive research efforts, one still cannot obtain bulk-insulating stanene samples-a prerequisite for any transport studies and applications of stanene. Here we show the experimental realization of an epitaxial stanene with an insulating bulk bandgap by using PbTe(111) substrates. With low-temperature molecular beam epitaxy, we are able to grow single layer stanene on PbTe(111). In-situ angle-resolved photoemission spectroscopy shows the characteristic stanene bands with its Fermi level lying in the bandgap. Doping Sr in PbTe removes the substrate states located in the stanene gap, resulting in a stanene sample with truly insulating bulk. This experimental progress paves the way for studies of stanene-based topological quantum effects.
Comments: 17 pages, 9 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1711.07035 [cond-mat.mtrl-sci]
  (or arXiv:1711.07035v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1711.07035
arXiv-issued DOI via DataCite
Journal reference: Adv. Funct. Mater. 2018, 1802723

Submission history

From: Yunyi Zang [view email]
[v1] Sun, 19 Nov 2017 15:47:50 UTC (1,148 KB)
[v2] Thu, 4 Oct 2018 09:02:29 UTC (1,148 KB)
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