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Helicons in tilted-Weyl semimetals
Authors:
Shiv Kumar Ram,
Amit Gupta
Abstract:
Helicons are transverse electromagnetic modes in three-dimensional (3D) electron systems in the presence of a static magnetic field. These modes have been proposed in isotropic or single Weyl semimetals(WSMs) (Francesco M.D. Pellegrino et al, Phys.\ Rev.\ B {\bf 92}, 201407(R) (2015)). In this work, we introduce a tilt term to investigate helicon modes in gapless WSMs within a semiclassical Boltzm…
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Helicons are transverse electromagnetic modes in three-dimensional (3D) electron systems in the presence of a static magnetic field. These modes have been proposed in isotropic or single Weyl semimetals(WSMs) (Francesco M.D. Pellegrino et al, Phys.\ Rev.\ B {\bf 92}, 201407(R) (2015)). In this work, we introduce a tilt term to investigate helicon modes in gapless WSMs within a semiclassical Boltzmann approach and show that the helicon modes exist in tilted WSMs.
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Submitted 3 July, 2025;
originally announced July 2025.
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Helicons in multi-Weyl semimetals
Authors:
Shiv Kumar Ram,
Amit Gupta
Abstract:
Helicons are transverse electromagnetic modes in three dimension(3D) electron systems in the presence of a static magnetic field. This modes have been proposed in isotropic or single Weyl semimetals(sWSMs) (Francesco M.D. Pellegrino et al, Phys. Rev. B 92, 201407(R) (2015)). In this work, we extend our study to investigate helicons modes in gapless multi-Weyl semimetals(mWSMs) within semiclassical…
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Helicons are transverse electromagnetic modes in three dimension(3D) electron systems in the presence of a static magnetic field. This modes have been proposed in isotropic or single Weyl semimetals(sWSMs) (Francesco M.D. Pellegrino et al, Phys. Rev. B 92, 201407(R) (2015)). In this work, we extend our study to investigate helicons modes in gapless multi-Weyl semimetals(mWSMs) within semiclassical Boltzmann approach and discuss the differences that arise compared to single Weyl semimetals.
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Submitted 21 April, 2025;
originally announced April 2025.
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Band edge discontinuities and carrier transport in c-Si/porous silicon heterojunctions
Authors:
Md. N. Islam,
Sanjay K. Ram,
Satyendra Kumar
Abstract:
We have prepared light emitting nanocrystalline porous silicon (PS) layers by electrochemical anodization of crystalline silicon (c-Si) wafer and characterized the c-Si/PS heterojunctions using temperature dependence of dark current-voltage (I-V) characteristics. The reverse bias I-V characteristics of c-Si/PS heterojunctions are found to behave like Schottky junctions where carrier transport is…
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We have prepared light emitting nanocrystalline porous silicon (PS) layers by electrochemical anodization of crystalline silicon (c-Si) wafer and characterized the c-Si/PS heterojunctions using temperature dependence of dark current-voltage (I-V) characteristics. The reverse bias I-V characteristics of c-Si/PS heterojunctions are found to behave like Schottky junctions where carrier transport is mainly governed by the carrier generation-recombination in the depletion region formed on the PS side. Fermi level of c-Si gets pinned to the defect levels at the interface resulting in ln(I) proportional to V^0.5. The barrier height in the reverse bias condition is shown to be equal to the band offset at the conduction band edges. An energy band diagram for the c-Si/PS heterojunction is proposed.
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Submitted 9 August, 2007;
originally announced August 2007.
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Fractional composition of large crystallite grains: a unique microstructural parameter to explain conduction behavior in single phase undoped microcrystalline silicon
Authors:
Sanjay K. Ram,
Satyendra Kumar,
P. Roca i Cabarrocas
Abstract:
We have studied the dark conductivity of a broad microstructural range of plasma deposited single phase undoped microcrystalline silicon films in a wide temperature range (15 - 450K) to identify the possible transport mechanisms and the interrelationship between film microstructure and electrical transport behavior. Different conduction behaviors seen in films with different microstructures are…
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We have studied the dark conductivity of a broad microstructural range of plasma deposited single phase undoped microcrystalline silicon films in a wide temperature range (15 - 450K) to identify the possible transport mechanisms and the interrelationship between film microstructure and electrical transport behavior. Different conduction behaviors seen in films with different microstructures are explained in the context of underlying transport mechanisms and microstructural features, for above and below room temperature measurements. Our microstructural studies have shown that different ranges of the percentage volume fraction of the constituent large crystallite grains (Fcl) of the microcrystalline silicon films correspond to characteristically different and specific microstructures, irrespective of deposition conditions and thicknesses. Our electrical transport studies demonstrate that each type of microcrystalline silicon material having a different range of Fcl shows different electrical transport behaviors.
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Submitted 8 August, 2007;
originally announced August 2007.
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Normal and anti Meyer-Neldel rule in conductivity of highly crystallized undoped microcrystalline silicon films
Authors:
Sanjay K. Ram,
Satyendra Kumar,
P. Roca i Cabarrocas
Abstract:
We have studied the electrical conductivity behavior of highly crystallized undoped hydrogenated microcrystalline silicon films having different microstructures. The dark conductivity is seen to follow Meyer Neldel rule (MNR) in some films and anti MNR in others, which has been explained on the basis of variation in the film microstructure and the corresponding changes in the effective density o…
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We have studied the electrical conductivity behavior of highly crystallized undoped hydrogenated microcrystalline silicon films having different microstructures. The dark conductivity is seen to follow Meyer Neldel rule (MNR) in some films and anti MNR in others, which has been explained on the basis of variation in the film microstructure and the corresponding changes in the effective density of states distributions. A band tail transport and statistical shift of Fermi level are used to explain the origin of MNR as well as anti-MNR in our samples. The observation of MNR and anti MNR in electrical transport behavior of microcrystalline silicon is discussed in terms of the basic underlying physics of their origin and the significance of these relationships.
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Submitted 8 August, 2007;
originally announced August 2007.
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Determination of localized conduction band-tail states distribution in single phase undoped microcrystalline silicon
Authors:
Sanjay K. Ram,
Satyendra Kumar,
P. Roca i Cabarrocas
Abstract:
We report on the phototransport properties of microstructurally well characterized plasma deposited highly crystallized microcrystalline silicon films. The steady state photoconductivity was measured on a wide microstructural variety of single-phase undoped microcrystalline silicon films as a function of temperature and light intensity. The band-tail parameter (kTc) was calculated from the photo…
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We report on the phototransport properties of microstructurally well characterized plasma deposited highly crystallized microcrystalline silicon films. The steady state photoconductivity was measured on a wide microstructural variety of single-phase undoped microcrystalline silicon films as a function of temperature and light intensity. The band-tail parameter (kTc) was calculated from the photoconductivity light intensity exponent values at different temperatures for a range of quasi-Fermi energies. The localized tail states distribution in the vicinity of conduction band edge of microcrystalline silicon was estimated using the values of kTc. Our study shows that microcrystalline silicon films possessing dissimilar microstructural attributes exhibit different phototransport behaviors, which are linked to different features of the density of states maps of the material.
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Submitted 8 August, 2007;
originally announced August 2007.
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Structural Determination of Nanocrystalline Si Films Using Ellipsometry and Raman Spectroscopy
Authors:
Sanjay K. Ram,
Md. N. Islam,
P. Roca i Cabarrocas,
Satyendra Kumar
Abstract:
Single phase nano and micro crystalline silicon films deposited using SiF4/H2 plasma at different H2 dilution levels were studied at initial and terminal stages of film growth with spectroscopic ellipsometry (SE), Raman scattering (RS) and atomic force microscopy (AFM). The analysis of data obtained from SE elucidates the microstructural evolution with film growth in terms of the changes in crys…
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Single phase nano and micro crystalline silicon films deposited using SiF4/H2 plasma at different H2 dilution levels were studied at initial and terminal stages of film growth with spectroscopic ellipsometry (SE), Raman scattering (RS) and atomic force microscopy (AFM). The analysis of data obtained from SE elucidates the microstructural evolution with film growth in terms of the changes in crystallite sizes and their volume fractions, crystallite conglomeration and film morphology. The effect of H2 dilution on film microstructure and morphology, and the corroborative findings from AFM studies are discussed. Our SE results evince two distinct mean sizes of crystallites in the material after a certain stage of film growth. The analysis of Raman scattering data for such films has been done using a bimodal size distribution of crystallite grains, which yields more accurate and physically rational microstructural picture of the material.
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Submitted 2 July, 2007;
originally announced July 2007.
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Elucidation of microstructure of single-phase microcrystalline silicon based on crystallite size distributions
Authors:
Sanjay K. Ram,
MD. N. Islam,
P. Roca I Cabarrocas,
Satyendra Kumar
Abstract:
Highly crystallized undoped hydrogenated microcrystalline silicon films prepared using SiF4-H2 mixture plasma were investigated at various stages of growth employing different microstructural probes. Our self-consistent results elucidate various aspects of the evolution of film microstructure, compositional changes and variations in crystallite size distributions with film growth. Inclusion of a…
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Highly crystallized undoped hydrogenated microcrystalline silicon films prepared using SiF4-H2 mixture plasma were investigated at various stages of growth employing different microstructural probes. Our self-consistent results elucidate various aspects of the evolution of film microstructure, compositional changes and variations in crystallite size distributions with film growth. Inclusion of a bimodal crystallite size distribution in microstructural data analysis leads to results that are corroborative with those obtained from other microstructural tools, and yields a more physically accurate and coherent description of microcrystalline silicon film microstructure.
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Submitted 2 July, 2007;
originally announced July 2007.
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Influence of the statistical shift of Fermi level on the conductivity behavior in microcrystalline silicon
Authors:
Sanjay K. Ram,
Satyendra Kumar,
P. Roca i Cabarrocas
Abstract:
The electrical conductivity behavior of highly crystallized undoped hydrogenated microcrystalline silicon films having different microstructures was studied. The dark conductivity is seen to follow Meyer Neldel rule (MNR) in some films and anti MNR in others, depending on the details of microstructural attributes and corresponding changes in the effective density of states distributions. A band…
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The electrical conductivity behavior of highly crystallized undoped hydrogenated microcrystalline silicon films having different microstructures was studied. The dark conductivity is seen to follow Meyer Neldel rule (MNR) in some films and anti MNR in others, depending on the details of microstructural attributes and corresponding changes in the effective density of states distributions. A band tail transport and statistical shift of Fermi level are used to explain the origin of MNR as well as anti-MNR in our samples. We present the evidence of anti-MNR in the various experimental transport data of microcrystalline silicon materials reported in literature and analyze these data together with ours to show the consistency and physical plausibility of statistical shift model. The calculated MNR parameters and other significant material parameters derived therefrom are tenable for a wide microstructural range of the microcrystalline silicon system.
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Submitted 14 July, 2007; v1 submitted 16 February, 2007;
originally announced February 2007.
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Influence of fractional composition of crystallite grains on the dark conductivity in fully crystallized undoped microcrystalline silicon
Authors:
Sanjay K. Ram,
Satyendra Kumar,
P. Roca i Cabarrocas
Abstract:
Improvement in film growth technology requires a knowledge of the correlation between microstructural and deposition parameters with electrical properties in hydrogenated microcrystalline Si films. Our study indicates that fractional compositions of the constituent crystallite grains in fully crystallized undoped microcrystalline Si films is a unique microstructural feature that defines the film…
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Improvement in film growth technology requires a knowledge of the correlation between microstructural and deposition parameters with electrical properties in hydrogenated microcrystalline Si films. Our study indicates that fractional compositions of the constituent crystallite grains in fully crystallized undoped microcrystalline Si films is a unique microstructural feature that defines the film microstructure and can be well correlated to the electrical transport properties as well.
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Submitted 16 February, 2007;
originally announced February 2007.
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Low temperature conduction behavior in highly crystallized undoped microcrystalline silicon thin films
Authors:
Sanjay K. Ram,
Satyendra Kumar,
P. Roca i Cabarrocas
Abstract:
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals two different temperature dependences in films having different microstructures. A T^(-0.5) dependence of dark conductivity supporting tunneling of carriers bet…
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The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals two different temperature dependences in films having different microstructures. A T^(-0.5) dependence of dark conductivity supporting tunneling of carriers between neighboring conducting crystals, similar to percolation-hopping model proposed for metal-insulator composite systems, is seen in microcrystalline silicon films that are fully crystallized with tightly packed large columnar grains and negligible density deficit. A T^(-0.25)dependence of dark conductivity supporting variable range hopping model with an exponential tail state distribution in the gap is seen in microcrystalline silicon films having mostly small crystalline grains, low degree of conglomeration and relatively higher density deficit. The correlation between the microstructural attributes and conductivity behavior is discussed by analyzing the physical plausibility of the hopping parameters and material properties derived by applying different transport models.
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Submitted 13 July, 2007; v1 submitted 16 February, 2007;
originally announced February 2007.
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Effective density of states map of undoped microcrystalline Si films: a combined experimental and numerical simulation approach
Authors:
Sanjay K. Ram,
Satyendra Kumar
Abstract:
The phototransport properties of plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon films were studied by measuring the steady state photoconductivity (SSPC) as a function of temperature and light intensity. The films possessing different thicknesses and microstructures had been well characterized by various microstructural probes. Microcrystalline Si films possess…
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The phototransport properties of plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon films were studied by measuring the steady state photoconductivity (SSPC) as a function of temperature and light intensity. The films possessing different thicknesses and microstructures had been well characterized by various microstructural probes. Microcrystalline Si films possessing dissimilar microstructural attributes were found to exhibit different phototransport behaviors. We have employed numerical modeling of SSPC to corroborate and further elucidate the experimental results. Our study indicates that the different phototransport behaviors are linked to different features of the proposed density of states maps of the material which are different for microcrystalline Si films having different types of microstructure.
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Submitted 13 July, 2007; v1 submitted 16 February, 2007;
originally announced February 2007.
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Effective density of states profiles of heterogeneous microcrystalline silicon
Authors:
Sanjay K. Ram,
Satyendra Kumar
Abstract:
The steady state photoconductivity as a function of temperature and light intensity was measured on plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon films possessing different thicknesses and microstructures. Different phototransport behaviors were observed experimentally in films having dissimilar microstructural attributes. This has been explained by numerical…
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The steady state photoconductivity as a function of temperature and light intensity was measured on plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon films possessing different thicknesses and microstructures. Different phototransport behaviors were observed experimentally in films having dissimilar microstructural attributes. This has been explained by numerical modeling to link these behaviors to different features of the proposed density of states maps of the material.
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Submitted 16 February, 2007;
originally announced February 2007.
