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Condensed Matter > Materials Science

arXiv:0708.1247 (cond-mat)
[Submitted on 9 Aug 2007]

Title:Band edge discontinuities and carrier transport in c-Si/porous silicon heterojunctions

Authors:Md. N. Islam, Sanjay K. Ram, Satyendra Kumar
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Abstract: We have prepared light emitting nanocrystalline porous silicon (PS) layers by electrochemical anodization of crystalline silicon (c-Si) wafer and characterized the c-Si/PS heterojunctions using temperature dependence of dark current-voltage (I-V) characteristics. The reverse bias I-V characteristics of c-Si/PS heterojunctions are found to behave like Schottky junctions where carrier transport is mainly governed by the carrier generation-recombination in the depletion region formed on the PS side. Fermi level of c-Si gets pinned to the defect levels at the interface resulting in ln(I) proportional to V^0.5. The barrier height in the reverse bias condition is shown to be equal to the band offset at the conduction band edges. An energy band diagram for the c-Si/PS heterojunction is proposed.
Comments: 8 pages, 11 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0708.1247 [cond-mat.mtrl-sci]
  (or arXiv:0708.1247v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0708.1247

Submission history

From: Sanjay Ram [view email]
[v1] Thu, 9 Aug 2007 11:10:34 UTC (183 KB)
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