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Condensed Matter > Materials Science

arXiv:cond-mat/0702386 (cond-mat)
[Submitted on 16 Feb 2007 (v1), last revised 14 Jul 2007 (this version, v2)]

Title:Influence of the statistical shift of Fermi level on the conductivity behavior in microcrystalline silicon

Authors:Sanjay K. Ram, Satyendra Kumar, P. Roca i Cabarrocas
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Abstract: The electrical conductivity behavior of highly crystallized undoped hydrogenated microcrystalline silicon films having different microstructures was studied. The dark conductivity is seen to follow Meyer Neldel rule (MNR) in some films and anti MNR in others, depending on the details of microstructural attributes and corresponding changes in the effective density of states distributions. A band tail transport and statistical shift of Fermi level are used to explain the origin of MNR as well as anti-MNR in our samples. We present the evidence of anti-MNR in the various experimental transport data of microcrystalline silicon materials reported in literature and analyze these data together with ours to show the consistency and physical plausibility of statistical shift model. The calculated MNR parameters and other significant material parameters derived therefrom are tenable for a wide microstructural range of the microcrystalline silicon system.
Comments: 10 pages, 4 figures, changed content and corrected typos
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:cond-mat/0702386 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0702386v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0702386
Related DOI: https://doi.org/10.1103/PhysRevB.77.045212

Submission history

From: Sanjay Ram [view email]
[v1] Fri, 16 Feb 2007 11:08:32 UTC (191 KB)
[v2] Sat, 14 Jul 2007 13:03:37 UTC (203 KB)
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