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Condensed Matter > Materials Science

arXiv:cond-mat/0702386v1 (cond-mat)
[Submitted on 16 Feb 2007 (this version), latest version 14 Jul 2007 (v2)]

Title:Influence of the statistical shift of Fermi level on the conductivity behavior in microcrystalline silicon

Authors:Sanjay K. Ram, Satyendra Kumar, P. Roca i Cabarrocas
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Abstract: The electrical conductivity behavior of fully crystallized undoped hydrogenated microcrystalline silicon films having different microstructures was studied. The dark conductivity is seen to follow Meyer Neldel rule (MNR) in some films and anti MNR in others, depending on microstructural attributes and correlative changes in the DOS distributions. A band tail transport and statistical shift of Fermi level are used to explain the origin of MNR and anti MNR in our samples. The elicited MNR parameters and other significant material parameters derived therefrom are tenable for the microcrystalline silicon system in general.
Comments: 8 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:cond-mat/0702386 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0702386v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0702386

Submission history

From: Sanjay Ram [view email]
[v1] Fri, 16 Feb 2007 11:08:32 UTC (191 KB)
[v2] Sat, 14 Jul 2007 13:03:37 UTC (203 KB)
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