Showing 1–50 of 51 results for author: Krishnamoorthy, S

Orientation-Dependent \b{eta}-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO

Authors: Yizheng Liu, Shane M. W. Witsell, John F. Conley, Sriram Krishnamoorthy

Abstract: This work reports the demonstration of ALD-deposited NiO/\b{eta}-Ga2O3 heterojunction diodes (HJDs) on low doped drift layer and highly doped (001) & (100) n+ substrates with experimental observation of a parallel-plane junction electric field as high as 7.5 MV/cm, revealing a crystal orientation dependence in \b{eta}-Ga2O3. We use a novel metalorganic precursor bis(1,4-di-tert-butyl-1,3-diazadien… ▽ More This work reports the demonstration of ALD-deposited NiO/\b{eta}-Ga2O3 heterojunction diodes (HJDs) on low doped drift layer and highly doped (001) & (100) n+ substrates with experimental observation of a parallel-plane junction electric field as high as 7.5 MV/cm, revealing a crystal orientation dependence in \b{eta}-Ga2O3. We use a novel metalorganic precursor bis(1,4-di-tert-butyl-1,3-diazadienyl) (nickel Ni(tBu2DAD)2) with ozone (O3) to deposit NiO. The NiO/\b{eta}-Ga2O3 HJD on 7.7 μm-thick HVPE-grown drift region exhibited an on-state current density of ~20 A/cm2 at 5 V, ~10-8 A/cm2 reverse leakage at low reverse bias(-5 V), and a rectifying ratio(Jon/Joff) of ~109. The HJD broke down at ~2.2 kV reverse bias, corresponding to a ~3.4 MV/cm parallel-plane junction electric field, with a noise floor reverse leakage (10-8~10-6 A/cm2, nA) at 80% of the device catastrophic breakdown voltage. The NiO/\b{eta}-Ga2O3 HJDs on n+ (001) & (100) highly-doped substrates exhibited breakdown voltages at 12.5-16.0 V and 28.5-70.5 V, respectively, with extracted critical electric field (EC) at 2.30-2.76 MV/cm, and 4.33-7.50 MV/cm, revealing a substrate crystal orientation dependence on breakdown electric field for \b{eta}-Ga2O3. The 7.5 MV/cm EC reported here is one of the highest parallel-plane junction electric fields reported in literature. △ Less

Submitted 22 March, 2025; originally announced March 2025.

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $β$-Ga$_2$O$_3$

Authors: Saurav Roy, Arkka Bhattacharyya, Carl Peterson, Sriram Krishnamoorthy

Abstract: In this article, we investigate the in-situ growth of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800°C. The Al$_2$O$_3$ is grown within the same reactor as the $β$-Ga$_2$O$_3$, employing trimethylaluminum (TMAl) and O$_2$ as precursors without breaking the vacuum. We characterize the shallow and deep-level traps through stressed ca… ▽ More In this article, we investigate the in-situ growth of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800°C. The Al$_2$O$_3$ is grown within the same reactor as the $β$-Ga$_2$O$_3$, employing trimethylaluminum (TMAl) and O$_2$ as precursors without breaking the vacuum. We characterize the shallow and deep-level traps through stressed capacitance-voltage (C-V) and photo-assisted C-V methods. The high-temperature deposited dielectric demonstrates an impressive breakdown field of approximately 10 MV/cm. Furthermore, we evaluate the reliability and lifetime of the dielectrics using time-dependent dielectric breakdown (TDDB) measurements. By modifying the dielectric deposition process to include a high-temperature (800°C) thin interfacial layer and a low-temperature (600°C) bulk layer, we report a 10-year lifetime under a stress field of 3.5 MV/cm along a breakdown field of 7.8 MV/cm. △ Less

Submitted 21 August, 2024; originally announced August 2024.

Effective uniaxial dielectric function tensor and optical phonons in ($\bar{2}01$)-plane oriented $β$-Ga$_2$O$_3$ films with equally-distributed six-fold rotation domains

Authors: Alyssa Mock, Steffen Richter, Alexis Papamichail, Vallery Stanishev, Misagh Ghezellou, Jawad Ul-Hassan, Andreas Popp, Saud Bin Anooz, Daniella Gogova, Praneeth Ranga, Sriram Krishnamoorthy, Rafal Korlacki, Mathias Schubert, Vanya Darakchieva

Abstract: Monoclinic $β$-Ga$_2$O$_3$ films grown on $c$-plane sapphire have been shown to exhibit six $(\bar{2}01)$-plane oriented domains, which are equally-spaced-by-rotation around the surface normal and equally-sized-by-volume that render the film optical response effectively uniaxial. We derive and discuss an optical model suitable for ellipsometry data analysis of such films. We model mid- and far-inf… ▽ More Monoclinic $β$-Ga$_2$O$_3$ films grown on $c$-plane sapphire have been shown to exhibit six $(\bar{2}01)$-plane oriented domains, which are equally-spaced-by-rotation around the surface normal and equally-sized-by-volume that render the film optical response effectively uniaxial. We derive and discuss an optical model suitable for ellipsometry data analysis of such films. We model mid- and far-infrared ellipsometry data from undoped and electrically insulating films with an effective uniaxial dielectric tensor based on projections of all phonon modes within the rotation domains parallel and perpendicular to the sample normal, i.e., to the reciprocal lattice vector $\mathbf{g}_{\bar{2}01}$. Two effective response functions are described by model, and found sufficient to calculate ellipsometry data that best-match measured ellipsometry data from a representative film. We propose to render either effective dielectric functions, or inverse effective dielectric functions, each separately for electric field directions parallel and perpendicular to $\mathbf{g}_{\bar{2}01}$, by sums of Lorentz oscillators, which permit to determine either sets of transverse optical phonon mode parameters, or sets of longitudinal optical phonon mode parameters, respectively. Transverse optical modes common to both dielectric functions can be traced back to single crystal modes with $B_{\mathrm{u}}$ character, while modes with $A_{\mathrm{u}}$ character only appear within the dielectric function for polarization perpendicular to the sample surface. The thereby obtained parameter sets reveal all phonon modes anticipated from averaging over the six-fold rotation domains of single crystal $β$-Ga$_2$O$_3$, but with slightly shifted transverse optical, and completely different longitudinal optical phonon modes. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Comments: 14 pgaes, 8 figures

Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3

Authors: Nathan D. Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael A Walker, Larry Wang, Ming Kit Cheng, Wei Zhao, Michael A. Scarpulla

Abstract: Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O… ▽ More Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O2 at 1000-1100 C. Using a novel finite difference scheme for the diffusion equation with time- and space-varying diffusion constant, we extract diffusion constants for Al, Fe, and cation vacancies under the given conditions, including the vacancy concentration dependence for Al. indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on Sn-doped beta-gallium oxide substrates, gradients observed in the extent of Al diffusion indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on (010) Fe-doped substrates, the Al diffusion is uniform through the SLs, indicating a depth-uniform concentration of vacancies. We find no evidence in either case for the introduction of gallium vacancies from the free surface at rates sufficient to affect Al diffusion down to ppm concentrations, which has important bearing on the validity of typically-made assumptions of vacancy equilibration. Additionally, we show that unintentional impurities in Sn-doped gallium oxide such as Fe, Ni, Mn, Cu, and Li also diffuse towards the surface and accumulate. Many of these likely have fast interstitial diffusion modes capable of destabilizing devices over time, thus highlighting the importance of controlling unintentional impurities in beta-gallium oxide wafers. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Comments: 11 pages, 4 figures, references a supplimental which will be submitted seperately

Topological Insulator Metamaterials

Authors: Harish N. S. Krishnamoorthy, Alexander M. Dubrovkin, Giorgio Adamo, Cesare Soci

Abstract: Confinement of electromagnetic fields at the subwavelength scale via metamaterial paradigms is an established method to engineer light-matter interaction in most common material systems, from insulators to semiconductors, from metals to superconductors. In recent years, this approach has been extended to the realm of topological materials, providing a new avenue to access nontrivial features of th… ▽ More Confinement of electromagnetic fields at the subwavelength scale via metamaterial paradigms is an established method to engineer light-matter interaction in most common material systems, from insulators to semiconductors, from metals to superconductors. In recent years, this approach has been extended to the realm of topological materials, providing a new avenue to access nontrivial features of their electronic band structure. In this review, we survey various topological material classes from a photonics standpoint, including crystal growth and lithographic structuring methods. We discuss how exotic electronic features such as spin-selective Dirac plasmon polaritons in topological insulators or hyperbolic plasmon polaritons in Weyl semimetals may give rise to unconventional magneto-optic, non-linear and circular photogalvanic effects in metamaterials across the visible to infrared spectrum. Finally, we dwell on how these effects may be dynamically controlled by applying external perturbations in the form of electric and magnetic fields or ultrafast optical pulses. Through these examples and future perspectives, we argue that topological insulator, semimetal and superconductor metamaterials are unique systems to bridge the missing links between nanophotonic, electronic and spintronic technologies. △ Less

Submitted 19 January, 2023; originally announced January 2023.

Comments: 56 pages, 20 figures

Enhancing the Electron Mobility in Si-doped (010) $β$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers

Authors: Arkka Bhattacharyya, Carl Peterson, Takeki Itoh, Saurav Roy, Jacqueline Cooke, Steve Rebollo, Praneeth Ranga, Berardi Sensale-Rodriguez, Sriram Krishnamoorthy

Abstract: We demonstrate a new substrate cleaning and buffer growth scheme in $β$-Ga$_2$O$_3$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 $^\circ$C) undoped Ga$_2$O$_3$ buffer is grown followed by transition layers to a high-temperature (HT, 810 $^\circ$C) Si-doped Ga$_2$O$_3$ channel layers without growth interruption. The (010)… ▽ More We demonstrate a new substrate cleaning and buffer growth scheme in $β$-Ga$_2$O$_3$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 $^\circ$C) undoped Ga$_2$O$_3$ buffer is grown followed by transition layers to a high-temperature (HT, 810 $^\circ$C) Si-doped Ga$_2$O$_3$ channel layers without growth interruption. The (010) Ga$_2$O$_3$ Fe-doped substrate cleaning uses solvent cleaning followed by an additional HF (49% in water) treatment for 30 mins before the epilayer growth. This step is shown to compensate the parasitic Si channel at the epilayer-substrate interface that originates from the substrate polishing process or contamination from the ambient. SIMS analysis shows the Si peak atomic density at the substrate interface is several times lower than the Fe atomic density in the substrate - indicating full compensation. The elimination of the parasitic electron channel at the epi-substrate interface was also verified by electrical (capacitance-voltage profiling) measurements. In the LT-grown buffer layers, it is seen that the Fe forward decay tail from the substrate is very sharp with a decay rate of $\sim$ 9 nm$/$dec. These channels show record high electron mobility in the range of 196 - 85 cm$^2$/Vs in unintentionally doped and Si-doped films in the doping range of 2$\times$10$^{16}$ to 1$\times$10$^{20}$ cm$^{-3}$. Si delta-doped channels were also grown utilizing this substrate cleaning and the hybrid LT-buffers. Record high electron Hall mobility of 110 cm$^2$/Vs was measured for sheet charge density of 9.2$\times$10$^{12}$ cm$^{-2}$. This substrate cleaning combined with the LT-buffer scheme shows the potential of designing Si-doped $β$-Ga$_2$O$_3$ channels with exceptional transport properties for high performance gallium oxide-based electron devices. △ Less

Submitted 2 February, 2023; v1 submitted 5 December, 2022; originally announced December 2022.

Comments: 20 pages, 10 figures,

Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs

Authors: Yiwen Song, Arkka Bhattacharyya, Anwarul Karim, Daniel Shoemaker, Hsien-Lien Huang, Saurav Roy, Craig McGray, Jacob H. Leach, Jinwoo Hwang, Sriram Krishnamoorthy, Sukwon Choi

Abstract: Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O… ▽ More Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O$_3$/4H-SiC composite wafer using a fusion-bonding method. A low temperature ($\le$ 600 $^{\circ}$C) epitaxy and device processing approach based on low-temperature (LT) metalorganic vapor phase epitaxy is developed to grow a Ga$_2$O$_3$ epitaxial channel layer on the composite wafer and subsequently fabricate into Ga$_2$O$_3$ power MOSFETs. This LT approach is essential to preserve the structural integrity of the composite wafer. These LT-grown epitaxial Ga$_2$O$_3$ MOSFETs deliver high thermal performance (56% reduction in channel temperature), high voltage blocking capabilities up to 2.45 kV, and power figures of merit of $\sim$ 300 MW/cm$^2$, which is a record high for any heterogeneously integrated Ga$_2$O$_3$ devices reported to date. This work is the first realization of multi-kilovolt homoepitaxial Ga$_2$O$_3$ power MOSFETs fabricated on a composite substrate with high heat transfer performance which delivers state-of-the-art power density values while running much cooler than those on native substrates. Thermal characterization and modeling results reveal that a Ga$_2$O$_3$/diamond composite wafer with a reduced Ga$_2$O$_3$ thickness ($\sim$ 1 $μ$m) and thinner bonding interlayer ($<$ 10 nm) can reduce the device thermal impedance to a level lower than today's GaN-on-SiC power switches. △ Less

Submitted 21 February, 2023; v1 submitted 13 October, 2022; originally announced October 2022.

Comments: 17 pages, 9 figures

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films

Authors: Fikadu Alema, Carl Peterson, Arkka Bhattacharyya, Saurav Roy, Sriram Krishnamoorthy, Andrei Osinsky

Abstract: We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and t… ▽ More We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and total contact resistance (Rc) of 1.62e-7 Ohm.cm^2 and 0.023 Ohm.mm were realized for $β$-Ga$_2$O$_3$: Si films with n > 3e20 cm^-3. TLM structures were also fabricated on heavily Si doped coherently strained $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ (x=12%, 17% and 22%) films. The film with 12% Al composition (n=1.23e20 cm^-3) showed \r{ho}c of 5.85e-6 Ohm.cm^2, but it increased to 2.19e-4 Ohm.cm^2 for a layer with a 22% Al composition. Annealing the samples post metal deposition has generally led to a decrease in contact resistance, but for high Al content $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$, the contact resistance did not change significantly after the annealing process. The low contact resistance values measured in this work are very promising for the fabrication of high frequency power devices. △ Less

Submitted 3 August, 2022; originally announced August 2022.

High-Mobility Tri-Gate $β$-Ga$_2$O$_3$ MESFETs with a Power Figure of Merit over 0.9 GW/cm$^2$

Authors: Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga, Carl Peterson, Sriram Krishnamoorthy

Abstract: In this letter, fin-shape tri-gate $β$-Ga$_{2}$O$_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm$^{2}$ - a record high for any $β$-Ga$_{2}$O$_{3}$ transistor to date. A low-temperature undoped buffer-channel stack design is developed which demonstrates record high Hall and drift electron mobilities in doped $β$-Ga$_{2}$O$_{3}$ channels allowing for low ON res… ▽ More In this letter, fin-shape tri-gate $β$-Ga$_{2}$O$_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm$^{2}$ - a record high for any $β$-Ga$_{2}$O$_{3}$ transistor to date. A low-temperature undoped buffer-channel stack design is developed which demonstrates record high Hall and drift electron mobilities in doped $β$-Ga$_{2}$O$_{3}$ channels allowing for low ON resistances R$_{ON}$ in $β$-Ga$_{2}$O$_{3}$ MESFETs. Fin-widths (W$_{fin}$) were 1.2-1.5 $μ$m and there were 25 fins (N$_{fin}$) per device with a trench depth of $\sim$1$μ$m. A $β$-Ga$_2$O$_3$ MESFET with a source-drain length of 6.4 $μ$m exhibits a high ON current (187 mA/mm), low R$_{ON}$ (20.5 $Ω$.mm) and a high average breakdown field (4.2 MV/cm). All devices show very low reverse leakage until catastrophic breakdown for breakdown voltages scaled from 1.1kV to $\sim$3kV. This work demonstrates the potential of channel engineering in improving $β$-Ga$_{2}$O$_{3}$ device performance toward lower conduction losses for low-to-medium voltage applications. △ Less

Submitted 31 July, 2022; v1 submitted 24 June, 2022; originally announced June 2022.

Comments: 4 pages, 5 pages

Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends

Authors: Jani Jesenovec, Benjamin L. Dutton, Nicholas Stone-Weiss, Adrian Chmielewski, Muad Saleh, Carl Peterson, Nasim Alem, Sriram Krishnamoorthy, John S. McCloy

Abstract: In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped B-Ga2O3. Further, growths of 33% AGO - B-(Al0.33Ga0.67)2O3 - and 50% AGO - B-(Al0.5Ga0.5)2O3 or B-AlGaO3 - produce polycrystalline single-phase monoclinic material (B-AGO). A… ▽ More In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped B-Ga2O3. Further, growths of 33% AGO - B-(Al0.33Ga0.67)2O3 - and 50% AGO - B-(Al0.5Ga0.5)2O3 or B-AlGaO3 - produce polycrystalline single-phase monoclinic material (B-AGO). All three compositions are investigated by x-ray diffraction, Raman spectroscopy, optical absorption, and 27Al nuclear magnetic resonance (NMR). By investigating single phase B-AGO over a large range of Al2O3 concentrations (10 - 50 mol. %), broad trends in the lattice parameter, vibrational modes, optical bandgap, and crystallographic site preference are determined. All lattice parameters show a linear trend with Al incorporation. According to NMR, aluminum incorporates on both crystallographic sites of B-Ga2O3, with a slight preference for the octahedral (GaII) site, which becomes more disordered with increasing Al. Single crystals of 10% AGO were also characterized by x-ray rocking curve, transmission electron microscopy, purity (glow discharge mass spectroscopy and x-ray fluorescence), optical transmission (200 nm - 20 um wavelengths), and resistivity. These measurements suggest that electrical compensation by impurity acceptor doping is not the likely explanation for high resistivity, but rather the shift of a hydrogen level from a shallow donor to a deep acceptor due to Al alloying. .. Cont. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 131 155702. △ Less

Submitted 25 April, 2022; v1 submitted 10 January, 2022; originally announced January 2022.

High Permittivity Dielectric Field-Plated Vertical (001) $β$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$

Authors: Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga, Heather Splawn, Jacob Leach, Sriram Krishnamoorthy

Abstract: This paper presents vertical (001) oriented $β$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $μm$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (R$_{on-sp}$) of 0.32 m$Ω$-cm$^{2}$. The extreme permittivity field plate oxide facilitated the later… ▽ More This paper presents vertical (001) oriented $β$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $μm$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (R$_{on-sp}$) of 0.32 m$Ω$-cm$^{2}$. The extreme permittivity field plate oxide facilitated the lateral spread of the electric field profile beyond the field plate edge and enabled a breakdown voltage ($V_{br}$) of 687 V. The edge termination efficiency increases from 13.5 $\%$ for non-field plated structure to 63 $\%$ for high permittivity field plate structure. The surface breakdown electric field was extracted to be 5.45 MV/cm at the center of the anode region using TCAD simulations. The high permittivity field plated SBD demonstrated a record high Baliga figure of merit (BFOM) of 1.47 GW/cm$^{2}$ showing the potential of Ga$_2$O$_3$ power devices for multi-kilovolt class applications. △ Less

Submitted 5 May, 2021; originally announced May 2021.

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Authors: Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya, Praneeth Ranga, Rujun Sun, Michael A. Scarpulla, Nasim Alem, Sriram Krishnamoorthy

Abstract: High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum a… ▽ More High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum and O$_2$ as precursors without breaking the vacuum at a growth temperature of 600 $^0$C. The fast and slow near interface traps at the Al$_2$O$_3$/ $β$-Ga$_2$O$_3$ interface are identified and quantified using stressed capacitance-voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D$_{it}$) are measured using ultra-violet (UV) assisted CV technique. The average D$_{it}$ for the MOSCAP is determined to be 7.8 $\times$ 10$^{11}$ cm$^{-2}$eV$^{-1}$. The conduction band offset of the Al$_2$O$_3$/ Ga$_2$O$_3$ interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al$_2$O$_3$/ Ga$_2$O$_3$ interface. The current-voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV/cm. This in-situ Al$_2$O$_3$ dielectric on $β$-Ga$_2$O$_3$ with improved dielectric properties can enable Ga$_2$O$_3$-based high performance devices. △ Less

Submitted 28 March, 2021; originally announced March 2021.

N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium

Authors: Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks, Michael A. Scarpulla, Sriram Krishnamoorthy

Abstract: We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or gallium delivery tube. Films were grown on 6 degree offcut sapphire and (010) \b{eta}-Ga2O3 substrates with growth rates between 0.5 - 22 μm/hr. By controlling th… ▽ More We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or gallium delivery tube. Films were grown on 6 degree offcut sapphire and (010) \b{eta}-Ga2O3 substrates with growth rates between 0.5 - 22 μm/hr. By controlling the germanium vapor pressure, a wide range of Hall carrier concentrations between 10^17 - 10^19 cm-3 were achieved. Low-temperature Hall data revealed a difference in donor incorporation depending on the reactor configuration. At low growth rates, germanium occupied a single donor energy level between 8 - 10 meV. At higher growth rates, germanium doping predominantly results in a deeper donor energy level at 85 meV. This work shows the effect of reactor design and growth regime on the kinetics of impurity incorporation. Studying donor incorporation in \b{eta}-Ga2O3 is important for the design of high-power electronic devices. △ Less

Submitted 8 March, 2021; originally announced March 2021.

Comments: 16 pages,4 figures

Journal ref: Journal of Vacuum Science & Technology A 39, 030404 (2021)

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals

Authors: Rujun Sun, Yu Kee Ooi, Arkka Bhattacharyya, Muad Saleh, Sriram Krishnamoorthy, Kelvin G. Lynn, Michael A. Scarpulla

Abstract: Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously re… ▽ More Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously reported 0.86 (E2) and 1.03 eV (E3) levels. For 10^18 cm-3 Zr-doped Ga2O3, signatures at 0.30 eV (E15) and 0.71 eV (E16) are present. For the highest Zr doping of 5*10^18 cm-3, we observe only one signature at 0.59 eV. Electric field-enhanced emission rates are demonstrated via increasing the reverse bias during measurement. The 0.86 eV signature in the UID sample displays phonon-assisted tunneling enhanced thermal emission and is consistent with the widely reported E2 (FeGa) defect. The 0.71 eV (E16) signature in the lower-Zr-doped crystal also exhibits phonon-assisted tunneling emission enhancement. Taking into account that the high doping in the Zr-doped diodes also increases the electric field, we propose that the 0.59 eV signature in the highest Zr-doped sample likely corresponds to the 0.71 eV signature in lower-doped samples. Our analysis highlights the importance of testing for and reporting on field-enhanced emission especially the electric field present during DLTS and other characterization experiments on beta-Ga2O3 along with the standard emission energy, cross-section, and lambda-corrected trap density. This is important because of the intended use of beta-Ga2O3 in high-field devices and the many orders of magnitude of possible doping. △ Less

Submitted 6 November, 2020; originally announced November 2020.

Comments: 18 pages, 3 figures

The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Authors: Prashanth Gopalan, Sean Knight, Ashish Chanana, Megan Stokey, Praneeth Ranga, Michael A. Scarpulla, Sriram Krishnamoorthy, V. Darakchieva, Zbigniew Galazka, Klaus Irmscher, Andreas Fiedler, Steve Blair, Mathias Schubert, Berardi Sensale-Rodriguez

Abstract: The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c, and b,… ▽ More The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c, and b, and reciprocal lattice direction a*. No significant frequency dispersion in the real part of dielectric permittivity was observed in the measured spectral range. Our results are in excellent agreement with recent radio-frequency capacitance measurements as well as with extrapolations from recent infrared measurements of phonon mode and high frequency contributions, and close the knowledge gap for these parameters in the terahertz spectral range. Our results are important for applications of beta-Ga2O3 in high-frequency electronic devices △ Less

Submitted 6 October, 2020; originally announced October 2020.

Comments: Main Manuscript is 6 pages long with 3 figures and 1 table. The submission also contains a Supplementary Info section

Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films

Authors: Anil Kumar Rajapitamahuni, Laxman Raju Thoutam, Praneeth Ranga, Sriram Krishnamoorthy, Bharat Jalan

Abstract: By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics i… ▽ More By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics in both bands yielding donor state energies of ~ 33.7 and ~ 45.6 meV. The former is consistent with the donor energy of Si in \b{eta}-Ga2O3 whereas the latter suggests a residual donor state, likely associated with a DX center. This study provides a critical insight into the impurity band conduction and the defect energy states in \b{eta}-Ga2O3 using high-field magnetotransport measurements. △ Less

Submitted 1 October, 2020; originally announced October 2020.

Comments: 14 pages

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Authors: Rujun Sun, Yu Kee Ooi, Praneeth Ranga, Arkka Bhattacharyya, Sriram Krishnamoorthy, Michael A. Scarpulla

Abstract: In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy (MOVPE) induced by annealing at different temperatures under O2 ambient. Annealing at successively higher temperatures decreases the overall PL yield and UV intensity at nearly the same rates, indicating t… ▽ More In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy (MOVPE) induced by annealing at different temperatures under O2 ambient. Annealing at successively higher temperatures decreases the overall PL yield and UV intensity at nearly the same rates, indicating the increase in formation of at least one non-radiative defect type. Simultaneously, the PL yield ratios of blue/UV and green/UV increase, suggesting that defects associated with these emissions increase in concentration with O2 annealing. Utilizing the different absorption coefficients of 240 and 266 nm polarization-dependent excitation, we find an overall activation energy for the generation of non-radiative defects of 0.69 eV in the bulk but 1.55 eV near the surface. We also deduce activation energies for the green emission-related defects of 0.60 eV near the surface and 0.89-0.92 eV through the films, whereas the blue-related defects have activation energy in the range 0.43-0.62 eV for all depths. Lastly, we observe hillock surface morphologies and Cr diffusion from the substrate into the film for temperatures above 1050 oC. These observations are consistent with the formation and diffusion of VGa and its complexes as a dominant process during O2 annealing, but further work will be necessary to determine which defects and complexes provide radiative and non-radiative recombination channels and the detailed kinetic processes occurring at surfaces and in bulk amongst defect populations. △ Less

Submitted 30 September, 2020; originally announced September 2020.

Comments: 14 pages, 3 figures

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Authors: Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski, Saurav Roy, Rujun Sun, Michael A. Scarpulla, Nasim Alem, Sriram Krishnamoorthy

Abstract: We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet cha… ▽ More We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 kΩ/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3. △ Less

Submitted 30 November, 2020; v1 submitted 23 September, 2020; originally announced September 2020.

Comments: 22 pages, 4 figures

Journal ref: Appl. Phys. Express 14 025501 (2021)

Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy

Authors: Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski, Saurav Roy, Nasim Alem, Sriram Krishnamoorthy

Abstract: We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in… ▽ More We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in the growth temperature. Films grown at 600 °C show an electron concentration of 9.7 x 1012 cm-2 and a FWHM of 3.2 nm. High resolution scanning/transmission electron microscopy of the epitaxial film did not reveal any significant observable degradation in crystal quality of the delta sheet and surrounding regions. Hall measurements of delta-doped film on Fe-doped substrate showed a sheet charge density of 6.1 x 1012 cm-2 and carrier mobility of 83 cm2/V. s. Realization of sharp delta doping profiles in MOVPE-grown \b{eta}-Ga2O3 is promising for high performance device applications. △ Less

Submitted 29 August, 2020; originally announced August 2020.

Comments: 10 pages, 5 figures

Low Temperature Homoepitaxy Of (010) $β$-Ga$_2$O$_3$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Authors: Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Jonathan Ogle, Luisa Whittaker-Brooks, Sriram Krishnamoorthy

Abstract: In this work, we report on the growth of high-mobility $β$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature $β$-Ga$_2$O$_3$ thin films grown at 600$^{\circ}$C on Fe-doped (010) bulk substrates exhibits remarkable crystalline quality which is evident from the measured room tem… ▽ More In this work, we report on the growth of high-mobility $β$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature $β$-Ga$_2$O$_3$ thin films grown at 600$^{\circ}$C on Fe-doped (010) bulk substrates exhibits remarkable crystalline quality which is evident from the measured room temperature Hall mobility of 186 cm$^2$/Vs for the unintentionally doped films. N-type doping is achieved by using Si as a dopant and controllable doping in the range of 2$\times$10$^{16}$ - 2$\times$10$^{19}$ cm$^{-3}$ is studied. Si incorporation and activation is studied by comparing silicon concentration from secondary ion mass spectroscopy (SIMS) and electron concentration from temperature-dependent Hall measurements. The films exhibit high purity (low C and H concentrations) with a very low concentration of compensating acceptors (2$\times$10$^{15}$ cm$^{-3}$) even at this growth temperature. Additionally, abrupt doping profile with forward decay of $\sim$ 5nm/dec (10 times improvement compared to what is observed for thin films grown at 810$^{\circ}$C) is demonstrated by growing at a lower temperature. △ Less

Submitted 1 August, 2020; originally announced August 2020.

Comments: 5 pages, 6 figures

Highly tunable polarization-engineered two-dimensional electron gas in $ε$-AlGaO3 / $ε$-Ga2O3 heterostructures

Authors: Praneeth Ranga, Sung Beom Cho, Rohan Mishra, Sriram Krishnamoorthy

Abstract: We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $ε$-AlGaO3 / $ε$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in $ε$-Ga2O3 /$ε$-AlGaO3 / $ε$-Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of $ε$-Ga2O3 and $ε$-AlGaO3 alloys. Using Sch… ▽ More We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $ε$-AlGaO3 / $ε$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in $ε$-Ga2O3 /$ε$-AlGaO3 / $ε$-Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of $ε$-Ga2O3 and $ε$-AlGaO3 alloys. Using Schrodinger-Poisson solver along with DFT calculated parameters, the 2DEG density is calculated as a function of barrier type and thickness. By optimizing the layer thicknesses of $ε$-Ga2O3/$ε$-AlGaO3/$ε$-Ga2O3 heterostructures, charge contrast ratios exceeding 1600 are obtained. This computational study indicates the high potential for $ε$-Ga2O3-based heterostructure devices for non-volatile memories and neuromorphic applications. △ Less

Submitted 28 April, 2020; originally announced April 2020.

Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping

Authors: Muad Saleh, Joel B. Varley, Jani Jesenovec, Arkka Bhattacharyya, Sriram Krishnamoorthy, Santosh Swain, Kelvin Lynn

Abstract: N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall Effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the m… ▽ More N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall Effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze (VGF) and Czochralski method in mixed Ar+O2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in \b{eta}-Ga2O3 with a measured electron concentration 2 x 10^19 cm^-3 , mobility 80-65 cm^2 /Vs, and resistivity down to 5 mOhm-cm in our samples. The concentration of Hf was measured to be 1.3 x 10^19 atoms/cm^3 using glow discharge mass spectroscopy (GDMS) on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 x 10^19 cm-3). △ Less

Submitted 30 January, 2020; originally announced January 2020.

Schottky Barrier Height Engineering In $β$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric

Authors: Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Saurav Roy, Michael A. Scarpulla, Kelvin G. Lynn, Sriram Krishnamoorthy

Abstract: This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS)… ▽ More This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS) Schottky barrier diodes were fabricated on bulk n-type doped $β$-Ga$_2$O$_3$ single crystal substrates along the (010), (-201) and (100) orientations and were characterized by room temperature current-voltage (I-V) and capacitance-voltage (C-V) measurements. Pt MIS diodes exhibited 0.53 eV and 0.37 eV increment in SBH along the (010) and (-201) orientations respectively as compared to their respective MS counterparts. The highest SBH of 1.81 eV was achieved on the (010)-oriented MIS SBD using Pt metal. The MIS SBDs on (100)-oriented substrates exhibited a dramatic increment ($>$1.5$\times$) in SBH as well as reduction in reverse leakage current. The use of thin dielectric interlayers can be an efficient experimental method to modulate SBH of metal/Ga$_2$O$_3$ junctions. △ Less

Submitted 20 January, 2020; originally announced January 2020.

Comments: 8 pages, 10 figures, 2 tables

Theoretical Investigation of Optical Intersubband Transitions and Infrared Photodetection in $β$-(AlxGa1-x)2O3/Ga2O3 Quantum Well Structures

Authors: Joseph E. Lyman, Sriram Krishnamoorthy

Abstract: We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system. Conventional material systems have matured into successful intersubband device applications such as large area quantum well infrared photodetector(QWIP) focal plane arrays for reproducible imaging systems but are funda… ▽ More We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system. Conventional material systems have matured into successful intersubband device applications such as large area quantum well infrared photodetector(QWIP) focal plane arrays for reproducible imaging systems but are fundamentally limited via maximum conduction band offsets to mid and long wavelength infrared applications. Short and near infrared devices are technologically important to optical communications systems and biomedical imaging applications, but are difficult to realize in intersubband designs for this reason. In this work, we use a first principles approach to estimate the expansive design space of monoclinic $β$(AlxGa1x)2O3/Ga2O3 material system, which reaches from short wavelength infrared (1 to 3μm) to far infrared (greater than 30μm) transition wavelengths. We estimate the performance metrics of two QWIPs operating in the long and short wavelength regimes, including an estimation of high room temperature detectivity (about 10^11 Jones) at the optical communication wavelength λp 1.55μm. Our findings demonstrate the potential of the rapidly maturing (AlxGa1-x)2O3/Ga2O3 material system to open the door for intersubband device applications. △ Less

Submitted 29 April, 2020; v1 submitted 20 January, 2020; originally announced January 2020.

Journal ref: Journal of Applied Physics 127 (17), 173102 (2020)

Green's Function Coupled Cluster Simulation of the Near-valence Ionizations of DNA-fragments

Authors: Bo Peng, Karol Kowalski, Ajay Panyala, Sriram Krishnamoorthy

Abstract: Accurate description of the ionization process in DNA is crucial to the understanding of the DNA damage under exposure to ionizing radiation, and the exploration of the potential application of DNA strands in nano-electronics. In this work, by employing our recently developed Green's function coupled-cluster (GFCC) library on supercomputing facilities, we have studied the spectral functions of sev… ▽ More Accurate description of the ionization process in DNA is crucial to the understanding of the DNA damage under exposure to ionizing radiation, and the exploration of the potential application of DNA strands in nano-electronics. In this work, by employing our recently developed Green's function coupled-cluster (GFCC) library on supercomputing facilities, we have studied the spectral functions of several guanine$-$cytosine (G$-$C) base pair structures ([G$-$C]$_n$, $n=1-3$) for the first time in a relatively broad near-valence regime ([-25.0,-5.0] eV) in the coupled-cluster with singles and doubles (CCSD) level. Our focus is to give a preliminary many-body coupled-cluster understanding and guideline of the vertical ionization energy (VIE), spectral profile, and ionization feature changes of these systems as the system size expands in this near-valence regime. The results show that, as the system size expands, even though the lowest VIEs keep decreasing, the changes of spectral function profile and the relative peak positions get unexpectedly smaller. Further analysis of the ionized states associated with the most intensive peak in the spectral functions reveals non-negligible $|2h,1p\rangle$'s in the ionized wave functions of the considered G$-$C base pair systems. The leading $|2h,1p\rangle$'s associated with the main ionizations from the cytosine part of the G$-$C base pairs feature a transition from the intra-base-pair cytosine $π\rightarrowπ^\ast$ excitation to the inter-base-pair electron excitation as the size of G$-$C base pairs expands, which also indicates the minimum quantum region in the many-body calculations of DNA systems. △ Less

Submitted 11 December, 2019; v1 submitted 11 November, 2019; originally announced November 2019.

Journal ref: J. Chem. Phys. 152, 011101 (2020)

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Authors: Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam, Yu Kee Ooi, Michael A. Scarpulla, Daniel Feezell, Sriram Krishnamoorthy

Abstract: We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the range of 2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm to 3.5 nm is meas… ▽ More We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the range of 2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm to 3.5 nm is measured. We also demonstrate a high density (6.4e12 cm-2) degenerate two-dimensional electron gas using a delta-doped \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure.The total charge could also include a contribution from a parallel channel in the \b{eta}-(Al0.26Ga0.74)2O3 alloy barrier. △ Less

Submitted 1 March, 2020; v1 submitted 28 October, 2019; originally announced October 2019.

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

Authors: Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley, Arkka Bhattacharyya, Daniel Feezell, Sriram Krishnamoorthy

Abstract: We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x101… ▽ More We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x1018-7.3x1019 cm-3 with a corresponding electron mobility of 53-27 cm2/V.s in uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 layers. Modulation doping is used to realize a total electron sheet charge of 2.3x1012 cm-2 in a \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure using a uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 barrier layer and a thin spacer layer. △ Less

Submitted 11 September, 2019; originally announced September 2019.

Journal ref: Appl. Phys. Express 12 111004 (2019)

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Authors: Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi, Yuewei Zhang, Joe McGlone, Jared Johnson, Mark Brenner, Aaron R. Arehart, Jinwoo Hwang, Saurabh Lodha, Siddharth Rajan

Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG… ▽ More Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics. △ Less

Submitted 28 June, 2017; originally announced June 2017.

Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs

Authors: Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Jared M. Johnson, Andrew A. Allerman, Michael W. Moseley, Andrew M. Armstrong, Jinwoo Hwang, Siddharth Rajan

Abstract: In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN. The dependence of tunneling on the work function of the metal was investigated, and it was found that highly reflective Al metal layers can enable eff… ▽ More In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN. The dependence of tunneling on the work function of the metal was investigated, and it was found that highly reflective Al metal layers can enable efficient hole injection into p-AlGaN, despite the relatively low work function of Al. Efficient tunneling hole injection was confirmed by light emission at 326 nm with on-wafer peak external quantum efficiency and wall-plug efficiency of 2.65% and 1.55%, respectively. A high power density of 83.7 W/cm2 was measured at 1200 kA/cm2. The metal/semiconductor tunnel junction structure demonstrated here could provide significant advantages for efficient and manufacturable device topologies for high power UV emitters. △ Less

Submitted 19 May, 2017; originally announced May 2017.

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Authors: Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Andrew A. Allerman, Michael W. Moseley, Andrew M. Armstrong, Siddharth Rajan

Abstract: We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact me… ▽ More We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact, and obtained a low contact resistance of Rc=4.8x10-5 Ohm cm2 on n-Al0.75Ga0.25N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2x1018 cm-3 to 1.5x1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs, and provides a novel structural design towards high power deep-UV emitters. △ Less

Submitted 28 February, 2017; originally announced March 2017.

Delta-doped Beta- Gallium Oxide Field Effect Transistor

Authors: Sriram Krishnamoorthy, Zhanbo Xia, Sanyam Bajaj, Mark Brenner, Siddharth Rajan

Abstract: We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was used to realize thin (12 nm) low-resistance layers with sheet resistance of 320 Ohm/square (mobility of 83 cm^2/V… ▽ More We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was used to realize thin (12 nm) low-resistance layers with sheet resistance of 320 Ohm/square (mobility of 83 cm^2/Vs, integrated sheet charge of 2.4x10^14 cm^-2). A single delta-doped sheet of carriers was employed as a channel to realize a field effect transistor with current ID,MAX =292 mA/mm and transconductance gM = 27 mS/mm. △ Less

Submitted 18 February, 2017; originally announced February 2017.

Comments: 5 figures

High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector

Authors: Anamika Singh Pratiyush, Sriram Krishnamoorthy, Swanand Vishnu Solanke, Zhanbo Xia, Rangarajan Muralidharan, Siddharth Rajan, Digbijoy N. Nath

Abstract: In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4 V with a… ▽ More In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4 V with a UV to visible rejection ratio > 105. The devices exhibited very low dark current < 10 nA at 20 V and showed no persistent photoconductivity (PPC) as evident from the sharp transients with a photo-to-dark current ratio > 103. These results represent the state-of-art performance for MBE-grown \b{eta}-Ga2O3 MSM solar blind detector. △ Less

Submitted 15 February, 2017; originally announced February 2017.

Plasmonics of Topological Insulators at Optical Frequencies

Authors: Jun Yin, Harish N. S. Krishnamoorthy, Giorgio Adamo, Alexander M. Dubrovkin, Yidong D. Chong, Nikolay I. Zheludev, Cesare Soci

Abstract: The development of nanoplasmonic devices, such as plasmonic circuits and metamaterial superlenses in the visible to ultraviolet frequency range, is hampered by the lack of low-loss plasmonic media. Recently, strong plasmonic response was reported in a certain class of topological insulators. Here, we present a first-principles density functional theory analysis of the dielectric functions of topol… ▽ More The development of nanoplasmonic devices, such as plasmonic circuits and metamaterial superlenses in the visible to ultraviolet frequency range, is hampered by the lack of low-loss plasmonic media. Recently, strong plasmonic response was reported in a certain class of topological insulators. Here, we present a first-principles density functional theory analysis of the dielectric functions of topologically insulating quaternary (Bi,Sb)2(Te,Se)3 trichalcogenide compounds. Bulk plasmonic properties, dominated by interband transitions, are observed from 2-3 eV and extend to higher frequencies. Moreover, trichalcogenide compounds are better plasmonic media than gold and silver at blue and UV wavelengths. By analysing thin slabs, we also show that these materials exhibit topologically protected surface states, which are capable of supporting propagating plasmon polariton modes over an extremely broad spectral range, from the visible to the mid-infrared and beyond, owing to a combination of inter- and intra-surface band transitions. △ Less

Submitted 1 February, 2017; originally announced February 2017.

Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates

Authors: Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara, Jared M. Johnson, John Jamison, Roberto C. Myers, Roland K. Kawakami, Jinwoo Hwang, Siddharth Rajan

Abstract: Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphire and gallium nitride (GaN) using a valved cracker source for Se. (002)-oriented GaSe with r… ▽ More Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphire and gallium nitride (GaN) using a valved cracker source for Se. (002)-oriented GaSe with random in-plane orientation of domains was grown on sapphire and GaN substrates at a substrate temperature of 350-450 C with complete surface coverage and smooth surface morphology. Higher growth temperature (575 C) resulted in the formation of single-crystalline ε-GaSe triangular domains with six-fold symmetry confirmed by in-situ reflection high electron energy diffraction (RHEED) and off-axis x-ray diffraction (XRD). A two-step growth method involving high temperature nucleation of single crystalline domains and low temperature growth to enhance coalescence was adopted to obtain continuous (002)-oriented GaSe with an epitaxial relationship with the substrate. While six-fold symmetry was maintained in the two step growth, β-GaSe phase was observed in addition to the dominant ε-GaSe in cross-sectional scanning transmission electron microscopy images. This work demonstrates the potential of growing high quality 2D-layered materials using molecular beam epitaxy and can be extended to the growth of other transition metal chalcogenides. △ Less

Submitted 19 October, 2016; originally announced October 2016.

Comments: Choong Hee Lee and Sriram Krishnamoorthy have contributed equally

Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes

Authors: Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Andrew A. Allerman, Michael W. Moseley, Andrew M. Armstrong, Siddharth Rajan

Abstract: We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate the compensation and doping in p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type dopi… ▽ More We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate the compensation and doping in p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62% were achieved for tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs, and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range. △ Less

Submitted 17 August, 2016; originally announced September 2016.

Comments: 9 pages, 5 figures

Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

Authors: Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Andrew A. Allerman, Michael W. Moseley, Andrew M. Armstrong, Siddharth Rajan

Abstract: Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction higher than 50%) materials towards highly efficient UV LEDs… ▽ More Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction higher than 50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced 3D charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. The design of graded tunnel junction structures could lead to low tunneling resistance below 10-3 Ohm cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance, and can enable efficient emitters in the UV-C wavelength range. △ Less

Submitted 30 August, 2016; originally announced August 2016.

Comments: 7 pages, 7 figures

AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts

Authors: Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Siddharth Rajan

Abstract: We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use reverse compositional graded n++ A… ▽ More We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance of 1.9x10-6 ohm.cm2 to n-Al0.75Ga0.25N channels (bandgap ~ 5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric. △ Less

Submitted 23 August, 2016; originally announced August 2016.

High Current Density 2D/3D Esaki Tunnel Diodes

Authors: Sriram Krishnamoorthy, Edwin W. Lee II, Choong Hee Lee, Yuewei Zhang, William D. McCulloch, Jared M. Johnson, Jinwoo Hwang, Yiying Wu, Siddharth Rajan

Abstract: The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-dop… ▽ More The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics. △ Less

Submitted 1 June, 2016; originally announced June 2016.

Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance

Authors: Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Jared M. Johnson, Jinwoo Hwang, Siddharth Rajan

Abstract: We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage of ~1.6-2 V. Therm… ▽ More We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage of ~1.6-2 V. Thermionic PN junctions with tunnel contact to the p-layer exhibited forward current density of 150 kA/cm^2 at 7.6 V, with a low series device resistance of 1 x 10^-5 ohm.cm^2. △ Less

Submitted 8 February, 2016; v1 submitted 17 January, 2016; originally announced January 2016.

Journal ref: Applied Physics Letters 108 (13), 131103 (2016)

Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs

Authors: Yuewei Zhang, Andrew Allerman, Sriram Krishnamoorthy, Fatih Akyol, Michael W. Moseley, Andrew Armstrong, Siddharth Rajan

Abstract: The efficiency of ultra violet LEDs is critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling-based top-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni n… ▽ More The efficiency of ultra violet LEDs is critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling-based top-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni nano-clusters as etch mask. The top surface roughened LEDs were found to enhance external quantum efficiency by over 40% for UV LEDs with a peak emission wavelength of 326 nm. The method described here can enable highly efficient UV LEDs without the need for complex manufacturing methods such as flip chip bonding. △ Less

Submitted 7 December, 2015; originally announced December 2015.

Comments: 10 pages, 4 figures, submitted

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

Authors: Sanyam Bajaj, Omor F. Shoron, Pil Sung Park, Sriram Krishnamoorthy, Fatih Akyol, Ting-Hsiang Hung, Shahed Reza, Eduardo M. Chumbes, Jacob Khurgin, Siddharth Rajan

Abstract: We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10^7 cm/s at a low sheet charge density of 7.8 x 10^11 cm-2. A new optical phonon emission-bas… ▽ More We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10^7 cm/s at a low sheet charge density of 7.8 x 10^11 cm-2. A new optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated LO phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs. △ Less

Submitted 27 August, 2015; originally announced August 2015.

Comments: 11 pages, 7 figures

Layer-Transferred MoS2/GaN PN Diodes

Authors: Edwin W. Lee II, Choong Hee Lee, Pran K. Paul, Lu Ma, William D. McCulloch, Sriram Krishnamoorthy, Yiying Wu, Aaron Arehart, Siddharth Rajan

Abstract: Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred… ▽ More Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS2 films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of approximately 0.2 eV for the transferred MoS2/GaN heterojunction. This conduction band offset was confirmed by internal photoemission (IPE) measurements. The energy band lineup of the MoS2/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications. △ Less

Submitted 19 May, 2015; originally announced May 2015.

Comments: 11 pages, 6 figures

Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters

Authors: Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson, Fatih Akyol, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan

Abstract: Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient ultraviolet solid state emitters remains a challenge due to the low p-type conductivity and high contact resistance in wide band gap AlGaN-based ultra-violet light em… ▽ More Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient ultraviolet solid state emitters remains a challenge due to the low p-type conductivity and high contact resistance in wide band gap AlGaN-based ultra-violet light emitters. In this work, we show that efficient interband tunneling can be used for non-equilibrium injection of holes into ultraviolet emitters. Polarization-engineered tunnel junctions were used to enhance tunneling probability by several orders of magnitude over a PN homojunction, leading to highly efficient tunnel injection of holes to ultraviolet light emitters. This demonstration of efficient interband tunneling introduces a new paradigm for design of ultra-violet light emitting diodes and diode lasers, and enables higher efficiency and lower cost ultra-violet emitters. △ Less

Submitted 6 February, 2015; originally announced February 2015.

Comments: 13 pages, 7 figures, Submitted

InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes

Authors: Sriram Krishnamoorthy, Fatih Akyol, Siddharth Rajan

Abstract: InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light… ▽ More InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measured in a MBE grown tunnel junction on GaN PN junction device, indicating that the tunnel junction LED device resistance is limited by the regrowth interface and not by the intrinsic tunneling resistance. △ Less

Submitted 16 March, 2014; originally announced March 2014.

Journal ref: Appl. Phys. Lett. 105, 141104 (2014)

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Authors: Masihhur R. Laskar, Lu Ma, ShanthaKumar K, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Wu Lu, Yiying Wu, Siddharth Rajan

Abstract: Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area electronic grade single cry… ▽ More Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS2) thin films with the highest mobility reported in CVD grown films so far. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) orientated sapphire yielded highly oriented single crystal MoS2 films for the first time. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures. △ Less

Submitted 25 February, 2013; v1 submitted 13 February, 2013; originally announced February 2013.

Low Resistance GaN/InGaN/GaN Tunnel Junctions

Authors: Sriram Krishnamoorthy, Fatih Akyol, Pil Sung Park, Siddharth Rajan

Abstract: Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 Ω cm2. The design methodology and low-temperature characteristic of these tunnel junctions is discussed, and insertion into a PN junction device is described. Applications of tunnel junctions in III-nitride optoelectronics devices are ex… ▽ More Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 Ω cm2. The design methodology and low-temperature characteristic of these tunnel junctions is discussed, and insertion into a PN junction device is described. Applications of tunnel junctions in III-nitride optoelectronics devices are explained using energy band diagrams. The lower band gap and polarization fields reduce tunneling barrier, eliminating the need for ohmic contacts to p-type GaN. This demonstration of efficient tunnel injection of carriers in III-Nitrides can lead to a replacement of existing resistive p-type contact material in light emitters with tunneling contact layers, requiring very little metal footprint on the surface, resulting in enhanced light extraction from top emitting emitters. △ Less

Submitted 21 January, 2013; v1 submitted 20 November, 2012; originally announced November 2012.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 102, 113503 (2013)

GdN Nanoisland-Based GaN Tunnel Junctions

Authors: Sriram Krishnamoorthy, Thomas Kent, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan

Abstract: We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 Ω-cm2) for various optoelectronic applications. We exploit the ability to overgrow high quality GaN over GdN nanoislands to create new nanoscale heterostructure designs that are not feasibl… ▽ More We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 Ω-cm2) for various optoelectronic applications. We exploit the ability to overgrow high quality GaN over GdN nanoislands to create new nanoscale heterostructure designs that are not feasible in planar epitaxy. GdN nanoisland assisted inter-band tunneling was found to enhance tunneling in both of the polar orientations of GaN. Tunnel injection of holes was confirmed by low temperature operation of GaN p-n junction with a tunneling contact layer, showing strong electroluminescence down to 20K. The availability of tunnel junctions with negligible absorption could not only improve the efficiency of existing optoelectronic devices significantly, but also enable new electronic and optical devices based on wide band gap materials. △ Less

Submitted 19 May, 2013; v1 submitted 17 June, 2012; originally announced June 2012.

Journal ref: Nano Lett., 13 (6), 2570(2013)

Scattering Properties of Paramagnetic Ground States in the Three-Dimensional Random-Field Ising Model

Authors: Gaurav P. Shrivastav, Siddharth Krishnamoorthy, Varsha Banerjee, Sanjay Puri

Abstract: We study the ground-state (T = 0) morphologies in the d = 3 random-field Ising model (RFIM) using a computationally efficient graph-cut method. We focus on paramagnetic states which arise for disorder strengths Δ> Δc, where Δc is the critical disorder strength at T = 0. These paramagnetic states consist of correlated "domains" of up and down spins which are separated by rough, fractal interfaces.… ▽ More We study the ground-state (T = 0) morphologies in the d = 3 random-field Ising model (RFIM) using a computationally efficient graph-cut method. We focus on paramagnetic states which arise for disorder strengths Δ> Δc, where Δc is the critical disorder strength at T = 0. These paramagnetic states consist of correlated "domains" of up and down spins which are separated by rough, fractal interfaces. They show novel scattering properties with a cusp singularity in the correlation function at short distances. △ Less

Submitted 16 September, 2011; originally announced September 2011.

Comments: 10 pages, 6 figures, Accepted for publication in Europhysics Letters

Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride

Authors: Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath, Sanyam Bajaj, Ting-Hsiang Hung, Siddharth Rajan

Abstract: We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated… ▽ More We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60x1012 cm-2 at the Al2O3/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up. △ Less

Submitted 12 September, 2011; originally announced September 2011.

Comments: 8 pages, 4 figures, Applied Physics Letters

Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering

Authors: Sriram Krishnamoorthy, Pil Sung Park, Siddharth Rajan

Abstract: We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable neg… ▽ More We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio (PVCR) of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell. △ Less

Submitted 19 August, 2011; originally announced August 2011.

Comments: 3 figures

Journal ref: Appl. Phys. Lett. 99, 233504 (2011)