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Condensed Matter > Materials Science

arXiv:1909.04855 (cond-mat)
[Submitted on 11 Sep 2019]

Title:MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

Authors:Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley, Arkka Bhattacharyya, Daniel Feezell, Sriram Krishnamoorthy
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Abstract:We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x1018-7.3x1019 cm-3 with a corresponding electron mobility of 53-27 cm2/V.s in uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 layers. Modulation doping is used to realize a total electron sheet charge of 2.3x1012 cm-2 in a \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure using a uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 barrier layer and a thin spacer layer.
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Applied Physics (physics.app-ph)
Cite as: arXiv:1909.04855 [cond-mat.mtrl-sci]
  (or arXiv:1909.04855v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1909.04855
Journal reference: Appl. Phys. Express 12 111004 (2019)
Related DOI: https://doi.org/10.7567/1882-0786/ab47b8

Submission history

From: Sriram Krishnamoorthy [view email]
[v1] Wed, 11 Sep 2019 05:16:24 UTC (1,334 KB)
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