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Condensed Matter > Materials Science

arXiv:2201.03673 (cond-mat)
[Submitted on 10 Jan 2022 (v1), last revised 25 Apr 2022 (this version, v2)]

Title:Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends

Authors:Jani Jesenovec, Benjamin L. Dutton, Nicholas Stone-Weiss, Adrian Chmielewski, Muad Saleh, Carl Peterson, Nasim Alem, Sriram Krishnamoorthy, John S. McCloy
View a PDF of the paper titled Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends, by Jani Jesenovec and 8 other authors
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Abstract:In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped B-Ga2O3. Further, growths of 33% AGO - B-(Al0.33Ga0.67)2O3 - and 50% AGO - B-(Al0.5Ga0.5)2O3 or B-AlGaO3 - produce polycrystalline single-phase monoclinic material (B-AGO). All three compositions are investigated by x-ray diffraction, Raman spectroscopy, optical absorption, and 27Al nuclear magnetic resonance (NMR). By investigating single phase B-AGO over a large range of Al2O3 concentrations (10 - 50 mol. %), broad trends in the lattice parameter, vibrational modes, optical bandgap, and crystallographic site preference are determined. All lattice parameters show a linear trend with Al incorporation. According to NMR, aluminum incorporates on both crystallographic sites of B-Ga2O3, with a slight preference for the octahedral (GaII) site, which becomes more disordered with increasing Al. Single crystals of 10% AGO were also characterized by x-ray rocking curve, transmission electron microscopy, purity (glow discharge mass spectroscopy and x-ray fluorescence), optical transmission (200 nm - 20 um wavelengths), and resistivity. These measurements suggest that electrical compensation by impurity acceptor doping is not the likely explanation for high resistivity, but rather the shift of a hydrogen level from a shallow donor to a deep acceptor due to Al alloying. .. Cont.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 131 155702.
Subjects: Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph)
Cite as: arXiv:2201.03673 [cond-mat.mtrl-sci]
  (or arXiv:2201.03673v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2201.03673
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1063/5.0073502
DOI(s) linking to related resources

Submission history

From: Jani Jesenovec [view email]
[v1] Mon, 10 Jan 2022 22:22:35 UTC (1,057 KB)
[v2] Mon, 25 Apr 2022 17:37:07 UTC (2,908 KB)
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