Condensed Matter > Materials Science
[Submitted on 10 Jan 2022 (this version), latest version 25 Apr 2022 (v2)]
Title:Alloyed ß-(AlxGa1-x)2O3 Bulk Czochralski Single and Polycrystals with High Al Concentration (x = 0.5, 0.33, 0.1)
View PDFAbstract:B-Ga2O3 materials with alumina alloying should allow even larger ultra-wide bandgaps, and bulk crystals are desired with high alumina contents to better lattice match Al-containing B-Ga2O3 epitaxial films. In this work, bulk Czochralski-grown single crystals of 10 mol.% Al2O3 alloyed B-Ga2O3 (B-Al0.2Ga1.8O3, i.e., monoclinic 10% AGO) were obtained, which show +0.28 eV increase in the bandgap compared to unintentionally doped (UID) B-Ga2O3. Further, bulk Czochralski growths of 33% (B-Al0.66Ga1.34O3) and 50% (B-AlGaO3) AGO were attempted, but experiments produced only fine-grained single-phase polycrystalline material. 10% AGO was characterized for structure (X-ray diffraction, Al-27 nuclear magnetic resonance, Raman, TEM), purity (glow discharge mass spectroscopy, X-ray fluorescence), optical transmission (200 nm - 20 micrometer wavelengths), and resistivity. Structural characterization indicates Al incorporation on both sites, with a preference to the octahedral (GaII) site. Optical and purity measurements suggest that electrical compensation by impurity acceptor doping is not the likely explanation for high resistivity, but rather the shift of hydrogen from a shallow donor to a deep acceptor due to Al alloying. Bulk crystals of B-Al0.2Ga1.8O3 appear to be good quality for thin film growth, with a lattice parameter that may allow higher Al concentration B-Ga2O3 thin films to be grown.
Submission history
From: Jani Jesenovec [view email][v1] Mon, 10 Jan 2022 22:22:35 UTC (1,057 KB)
[v2] Mon, 25 Apr 2022 17:37:07 UTC (2,908 KB)
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