Showing 1–50 of 69 results for author: Iannaccone, G

Giant chirality-induced spin polarization in twisted transition metal dichalcogenides

Authors: Guido Menichetti, Lorenzo Cavicchi, Leonardo Lucchesi, Fabio Taddei, Giuseppe Iannaccone, Pablo Jarillo-Herrero, Claudia Felser, Frank H. L. Koppens, Marco Polini

Abstract: Chirality-induced spin selectivity (CISS) is an effect that has recently attracted a great deal of attention in chiral chemistry and that remains to be understood. In the CISS effect, electrons passing through chiral molecules acquire a large degree of spin polarization. In this work we study the case of atomically-thin chiral crystals created by van der Waals assembly. We show that this effect ca… ▽ More Chirality-induced spin selectivity (CISS) is an effect that has recently attracted a great deal of attention in chiral chemistry and that remains to be understood. In the CISS effect, electrons passing through chiral molecules acquire a large degree of spin polarization. In this work we study the case of atomically-thin chiral crystals created by van der Waals assembly. We show that this effect can be spectacularly large in systems containing just two monolayers, provided they are spin-orbit coupled. Its origin stems from the combined effects of structural chirality and spin-flipping spin-orbit coupling. We present detailed calculations for twisted homobilayer transition metal dichalcogenides, showing that the chirality-induced spin polarization can be giant, e.g. easily exceeding $50\%$ for ${\rm MoTe}_2$. Our results clearly indicate that twisted quantum materials can operate as a fully tunable platform for the study and control of the CISS effect in condensed matter physics and chiral chemistry. △ Less

Submitted 23 January, 2024; v1 submitted 14 December, 2023; originally announced December 2023.

Comments: 6 pages, 4 figures + Supplemental Material

Journal ref: Newton 1, 100013 (2025)

Two-dimensional field-effect transistors based on lateral heterojunctions of transition metal dichalcogenides: dissipative quantum transport modeling

Authors: Giuseppe Lovarelli, Fabrizio Mazziotti, Demetrio Logoteta, Giuseppe Iannaccone

Abstract: Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process. Suitably designed lateral heterojunctions provide an opportunity to independently tailor the contact and channel properties in order to optimize contact resistance. In… ▽ More Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process. Suitably designed lateral heterojunctions provide an opportunity to independently tailor the contact and channel properties in order to optimize contact resistance. Inspired by the recent experimental demonstration of a two-dimensional $p$-type Schottky barrier, here we use quantum transport simulations to estimate the performance of $p$-type transistors in which the channel consists of a lateral heterostructure of NbS$_2$/MoS$_2$/NbS$_2$ (semimetal-semiconductor-semimetal). We find that the gate alignment with the channel is a critical design parameter, strongly influencing the capability of the gate to modulate the Schottky barrier at the MoS$_2$/NbS$_2$ interface. This effect is also found to significantly affect the scaling behavior of the device. △ Less

Submitted 29 December, 2024; v1 submitted 29 November, 2023; originally announced November 2023.

Comments: 6 pages, 5 figures

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

Authors: Daniel S. Schneider, Leonardo Lucchesi, Eros Reato, Zhenyu Wang, Agata Piacentini, Jens Bolten, Damiano Marian, Enrique G. Marin, Aleksandra Radenovic, Zhenxing Wang, Gianluca Fiori, Andras Kis, Giuseppe Iannaccone, Daniel Neumaier, Max C. Lemme

Abstract: Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metal… ▽ More Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k$Ω$$μ$m and high on/off current ratios of 10${^8}$. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits. △ Less

Submitted 5 April, 2024; v1 submitted 3 April, 2023; originally announced April 2023.

Comments: 39 pages

Journal ref: npj 2D Materials and Applications, 8, 35, 2024

Vertical Heterostructures between Transition-Metal Dichalcogenides -- A Theoretical Analysis of the NbS$_2$/WSe$_2$ junction

Authors: Zahra Golsanamlou, Poonam Kumari, Luca Sementa, Teresa Cusati, Giuseppe Iannaccone, Alessandro Fortunelli

Abstract: Low-dimensional metal-semiconductor vertical heterostructures (VH) are promising candidates in the search of electronic devices at the extreme limits of miniaturization. Within this line of research, here we present a theoretical/computational study of the NbS$_2$/WSe$_2$ metal-semiconductor vertical hetero-junction using density functional theory (DFT) and conductance simulations. We first constr… ▽ More Low-dimensional metal-semiconductor vertical heterostructures (VH) are promising candidates in the search of electronic devices at the extreme limits of miniaturization. Within this line of research, here we present a theoretical/computational study of the NbS$_2$/WSe$_2$ metal-semiconductor vertical hetero-junction using density functional theory (DFT) and conductance simulations. We first construct atomistic models of the NbS$_2$/WSe$_2$ VH considering all the five possible stacking orientations at the interface, and we conduct DFT and quantum-mechanical (QM) scattering simulations to obtain information on band structure and transmission coefficients. We then carry out an analysis of the QM results in terms of electrostatic potential, fragment decomposition, and band alignment. The behavior of transmission expected from this analysis is in excellent agreement with, and thus fully rationalizes, the DFT results, and the peculiar double-peak profile of transmission. Finally, we use maximally localized Wannier functions, projected density of states (PDOS), and a simple analytic formula to predict and explain quantitatively the differences in transport in the case of epitaxial misorientation. Within the class of Transition-Metal Dichalcogenide systems, the NbS$_2$/WSe$_2$ vertical heterostructure exhibits a wide interval of finite transmission and a double-peak profile, features that could be exploited in applications. △ Less

Submitted 2 August, 2022; originally announced August 2022.

Comments: 22 pages main text, 11 pages supplementary

Journal ref: Advanced Electronic Materials (2022): 2200020

Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs

Authors: Demetrio Logoteta, Jiang Cao, Marco Pala, Paolo Marconcini, Giuseppe Iannaccone

Abstract: We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope transistors, these devices require simplified manufacturing processes, as no confinement of the 2D material is needed, nor any tunneling heterojunction or ferroelectric g… ▽ More We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope transistors, these devices require simplified manufacturing processes, as no confinement of the 2D material is needed, nor any tunneling heterojunction or ferroelectric gate insulators, and only n- or p-type contacts are demanded. We demonstrate their operation by studying an implementation based on monolayer CrI$_2$ through quantum transport simulations. We show that the subthermionic capabilities of the device originate from a cold-source effect, intrinsically driven by the shape of the band structure of the 2D material and robust against the effects of thermalization induced by the electron-phonon interactions. Due to the absence of a tunneling barrier when the device is switched on, current levels can be achieved that are typically out of reach for tunnel FETs. The device also exhibits excellent scaling properties, maintaining a subthermionic subthreshold swing (SS) up to channel lengths as short as 5 nm. △ Less

Submitted 22 June, 2021; originally announced June 2021.

Comments: 7 pages, 8 figures

A Ballistic Two-Dimensional Lateral Heterojunction Bipolar Transistor

Authors: Leonardo Lucchesi, Gaetano Calogero, Gianluca Fiori, Giuseppe Iannaccone

Abstract: We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a Field Effect Transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode… ▽ More We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a Field Effect Transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode. As typical of bipolar transistors, the collector current undergoes a tenfold increase for each 60 mV increase of the base voltage over several orders of magnitude at room temperature, without sophisticated optimization of the electrostatics. We present a detailed investigation based on self-consistent simulations of electrostatics and quantum transport for both electron and holes of a pnp device using MoS$_2$ for the 10-nm base and WSe$_2$ for emitter and collector. Our three-terminal device simulations confirm the working principle and a large current modulation I$_\text{ON}$/I$_\text{OFF}\sim 10^8$ for $ΔV_{\rm EB}=0.5$ V. Assuming ballistic transport, we are able to achieve a current gain $β\sim$ 10$^4$ over several orders of magnitude of collector current and a cutoff frequency up to the THz range. Exploration of the rich world of bipolar nanoscale device concepts in 2D materials is promising for their potential applications in electronics and optoelectronics. △ Less

Submitted 24 March, 2021; originally announced March 2021.

Comments: Accepted for publication on Physical Review Research, 15 pages, 3 figures with subfigures

Journal ref: Phys. Rev. Research 3, 023158 (2021)

A cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Authors: Demetrio Logoteta, Jiang Cao, Marco Pala, Philippe Dollfus, Youseung Lee, Giuseppe Iannaccone

Abstract: The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations per unit energy. In this paper, we propose a new device concept for energy-efficient, steep-slope transistors based on heterojunctions of 2D materials. We show that by injecting electrons from an isolated and weakly disp… ▽ More The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations per unit energy. In this paper, we propose a new device concept for energy-efficient, steep-slope transistors based on heterojunctions of 2D materials. We show that by injecting electrons from an isolated and weakly dispersive band into a strongly dispersive one, subthermionic subthreshold swings can be obtained, as a result of a cold-source effect and of a reduced thermalization of carriers. This mechanism is implemented by integrating in a MOSFET architecture two different monolayer materials coupled through a van der Waals heterojunction, combining the subthermionic behavior of tunnel field-effect transistors (FETs) with the robustness of a MOSFET architecture against performance-degrading factors, such as traps, band tails and roughness. A further advantage with respect to tunnel FETs is that only an n-type or p-type doping is required to fabricate the device. In order to demonstrate the device concept and to discuss the underlying physics and the design options, we study through abinitio and full-quantum transport simulations a possible implementation that exploits two recently reported 2D materials. △ Less

Submitted 29 October, 2020; originally announced October 2020.

Comments: Accepted for publication in Physical Review Research

Theoretical Analysis of a Two-Dimensional Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface

Authors: Zahra Golsanamlou, Luca Sementa, Teresa Cusati, Giuseppe Iannaccone, Alessandro Fortunelli

Abstract: We report a first-principle theoretical study of a monolayer-thick lateral heterostructure (LH) joining two different transition metal dichalcogenides (TMDC): NbS2 and WSe2. The NbS2//WSe2 LH can be considered a prototypical example of a conducting(NbS2)/semiconducting(WSe2) two-dimensional (2D) hybrid heterojunction. We first generate and validate realistic atomistic models of the NbS2//WSe2 LH,… ▽ More We report a first-principle theoretical study of a monolayer-thick lateral heterostructure (LH) joining two different transition metal dichalcogenides (TMDC): NbS2 and WSe2. The NbS2//WSe2 LH can be considered a prototypical example of a conducting(NbS2)/semiconducting(WSe2) two-dimensional (2D) hybrid heterojunction. We first generate and validate realistic atomistic models of the NbS2//WSe2 LH, derive their band structure and subject it to a fragment decomposition and electrostatic potential analysis to extract a simple but quantitative model of this interfacial system. Stoichiometric fluctuations models are also investigated and found not to alter the qualitative picture. We then conduct electron transport simulations analyze them via band alignment analysis. We conclude that the NbS2//WSe2 LH appears as a robust seamless in-plane 2D modular junction for potential use in opto-electronic devices going beyond the present miniaturization technology. △ Less

Submitted 17 June, 2020; originally announced June 2020.

A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect

Authors: D. Logoteta, M. G. Pala, J. Choukroun, P. Dollfus, G. Iannaccone

Abstract: We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and the performance dependence on the design parameters through atomistic self-consistent quantum simulations. Our results indicate that the device can provide high… ▽ More We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and the performance dependence on the design parameters through atomistic self-consistent quantum simulations. Our results indicate that the device can provide high ION/IOFF ratios, compatible with electronic applications, albeit biased at ultralow voltages of around 0.1 V. △ Less

Submitted 17 February, 2020; originally announced February 2020.

Comments: 4 pages, 5 figures

Journal ref: IEEE Electron Device Letters, vol. 40, pp. 1550 - 1553 (2019)

Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source

Authors: Enrique G. Marin, Damiano Marian, Marta Perucchini, Gianluca Fiori, Giuseppe Iannaccone

Abstract: The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer stacking can give rise to steep transitions in… ▽ More The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer stacking can give rise to steep transitions in the density of states (DOS) of the 2D material, that can eventually be used to achieve sub-60 mV/decade subthreshold swing in LH-FETs thanks to an energy-filtering source. We have observed this effect in the case of a PdS2 LH-FET due to the particular density of states of its bilayer configuration. Our results are based on ab initio and multiscale materials and device modeling, and incite the exploration of the 2D-material design space in order to find more abrupt DOS transitions and better suitable candidates. △ Less

Submitted 9 January, 2020; originally announced January 2020.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in ACS Nano, copyright American Chemical Society after peer review. To access the final edited and published work see acsnano.org

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Authors: Silvia Conti, Lorenzo Pimpolari, Gabriele Calabrese, Robyn Worsley, Subimal Majee, Dmitry K. Polyushkin, Matthias Paur, Simona Pace, Dong Hoon Keum, Filippo Fabbri, Giuseppe Iannaccone, Massimo Macucci, Camilla Coletti, Thomas Mueller, Cinzia Casiraghi, Gianluca Fiori

Abstract: Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, c… ▽ More Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing.The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 x 10^3 (up to 5 x 10^4) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper. △ Less

Submitted 14 October, 2020; v1 submitted 14 November, 2019; originally announced November 2019.

Analogue two-dimensional semiconductor electronics

Authors: Dmitry K. Polyushkin, Stefan Wachter, Lukas Mennel, Maksym Paliy, Giuseppe Iannaccone, Gianluca Fiori, Daniel Neumaier, Barbara Canto, Thomas Mueller

Abstract: While digital electronics has become entirely ubiquitous in today's world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital cou… ▽ More While digital electronics has become entirely ubiquitous in today's world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital counterparts - pushed for research into alternative materials. In recent years two-dimensional materials have received considerable research interest, fitting their promising properties for future electronics. In this work we demonstrate an operational amplifier - a basic building block of analogue electronics - using a two-dimensional semiconductor, namely molybdenum disulfide, as active material. Our device is capable of stable operation with good performance, and we demonstrate its use in feedback circuits such as inverting amplifiers, integrators, log amplifiers, and transimpedance amplifiers. △ Less

Submitted 31 August, 2019; originally announced September 2019.

Comments: 14 pages, 4 figures, 1 table

Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate

Authors: Marta Perucchini, Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone, Gianluca Fiori

Abstract: Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in electronic devices. Inspired by recent experimental results (S.B. Desai, S.R. Madhvapathy, A.B. Sachid, J.P. Llinas, Q. Wang, G.H. Ahn, G. Pitner, M.J. Kim, J. B… ▽ More Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in electronic devices. Inspired by recent experimental results (S.B. Desai, S.R. Madhvapathy, A.B. Sachid, J.P. Llinas, Q. Wang, G.H. Ahn, G. Pitner, M.J. Kim, J. Bokor, C. Hu, H.-S. P. Wong, and A. Javey, Science 354, 99 (2016)), in this work we examined the ultimate performance of of MoS$_2$-channel Field Effect Transistors with 1-nm gate length by means of quantum transport simulations based on Poisson equation and Non-equilibrium Green's function formalism. We considered uniformly scaled devices, with channel lengths ranging from 5 to 20 nm controlled by a cylindrical gate with a 1-nm diameter, as would be required in realistic integrated circuits. Moreover, we also evaluated the effect of the finite density of states of a carbon nanotube gate on the loss of device performance. We noticed that the sub-threshold swing for all short-channel structures was greater than the ideal limit of thermionic devices and we attributed this to the presence of tunneling currents and gate-drain interactions. We tailored the transistor architecture in order to improve the gate control. We concluded that the limited CNT-channel capacitive coupling poses severe limitations on the operation and thus exploitation of the device. △ Less

Submitted 20 April, 2019; originally announced April 2019.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 113, 183507 (2018)

Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene

Authors: Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone, Gianluca Fiori

Abstract: We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a $98\%$) with voltage-controlled spin polarization operating at room temperature and with small operating voltage ($0.3$ V). The concept exploits the presence of spin-polarized edge states in a stanene nanoribbon. The spin polarization of the total current can be modulated by a different… ▽ More We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a $98\%$) with voltage-controlled spin polarization operating at room temperature and with small operating voltage ($0.3$ V). The concept exploits the presence of spin-polarized edge states in a stanene nanoribbon. The spin polarization of the total current can be modulated by a differential tuning of the transmission properties, and of the occupation of edge states of different spin, via the application of an in-plane electric field. We demonstrate device operation using ab-initio and quantum transport simulations. △ Less

Submitted 19 April, 2019; originally announced April 2019.

Comments: 15 pages, 5 figures

Journal ref: Phys. Rev. Applied 10, 044063 (2018)

Stacking and interlayer electron transport in MoS2

Authors: Teresa Cusati, Alessandro Fortunelli, Gianluca Fiori, Giuseppe Iannaccone

Abstract: In this work, we investigate the effect of the stacking sequence in MoS2 multilayer systems on their electron transport properties, through first-principles simulations of structural and electron transport properties. We show that interlayer electron transport is highly sensitive to the stacking sequence of the multilayers, with specific sequences producing much higher electron transmission due to… ▽ More In this work, we investigate the effect of the stacking sequence in MoS2 multilayer systems on their electron transport properties, through first-principles simulations of structural and electron transport properties. We show that interlayer electron transport is highly sensitive to the stacking sequence of the multilayers, with specific sequences producing much higher electron transmission due to larger orbital interactions and band structure effects. These results explain contrasting experimental evidence on interlayer transport measurements as due to imperfect structural control, provide insight on modeling and suggest ways to improve the performance of electron devices based on MoS2 multilayer systems via multilayer structure engineering. △ Less

Submitted 8 November, 2018; originally announced November 2018.

Comments: 16 pages, 5 figures

Journal ref: Physical Review B 98, 115403 (2018)

High-performance two-dimensional p-type transistors based on GaSe layers: an ab-initio study

Authors: Agnieszka Kuc, Teresa Cusati, Elias Dib, Augusto F. Oliveira, Alessandro Fortunelli, Giuseppe Iannaccone, Thomas Heine, Gianluca Fiori

Abstract: Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device characteristics are due to the valence band edge shape, which leads to very heavy holes in the transport direction and eventually suppresses intraband tunneling, detrimen… ▽ More Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device characteristics are due to the valence band edge shape, which leads to very heavy holes in the transport direction and eventually suppresses intraband tunneling, detrimental for correct operation in the OFF state. △ Less

Submitted 26 June, 2018; originally announced June 2018.

Comments: 10 pages, 3 figures, 1 table

Journal ref: Advanced Electronic Materials 3 (2017) 1600399

First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material

Authors: Enrique G. Marin, Damiano Marian, Giuseppe Iannaccone, Gianluca Fiori

Abstract: We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one-dimensional (1D) channel devices (comprised of a 1D chain of atoms) due to localized states in correspondence of the nanoribbon edges. The investigation is based on first-principle calculations and multi-sca… ▽ More We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one-dimensional (1D) channel devices (comprised of a 1D chain of atoms) due to localized states in correspondence of the nanoribbon edges. The investigation is based on first-principle calculations and multi-scale transport simulations to assess devices performance against industry requirements and their robustness with respect to technological issues like line edge roughness, detrimental for nanoribbons. We will show that edges states are robust with respect to the presence of non-idealities (e.g., atoms vacancies at the edges), and that 1D-channel TFETs exhibit interesting potential for digital applications and room for optimization in order to improve the Ion/Ioff at the levels required by the ITRS, while opening a path for the exploration of new device concepts at the ultimate scaling limits. △ Less

Submitted 10 April, 2018; originally announced April 2018.

Comments: 22 pages, 9 figures

Journal ref: Nanoscale, 9, 19390 (2017)

Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS$_2$

Authors: Damiano Marian, Elias Dib, Teresa Cusati, Enrique G. Marin, Alessandro Fortunelli, Giuseppe Iannaccone, Gianluca Fiori

Abstract: In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS$_2$, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron beam irradiation. The first concept, the lateral heterostructure field-effect transistor, exhibits potential of better pe… ▽ More In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS$_2$, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron beam irradiation. The first concept, the lateral heterostructure field-effect transistor, exhibits potential of better performance with respect to the foreseen evolution of CMOS technology, both for high performance and low power applications. Performance potential has been evaluated by means of detailed multi-scale materials and device simulations. The second concept, the planar barristor, also exhibits potential competitive performance with CMOS, and an improvement of orders of magnitude in terms of the main figures of merit with respect to the recently proposed vertical barristor. △ Less

Submitted 31 March, 2018; originally announced April 2018.

Comments: 7 pages, 8 figures

Journal ref: Phys. Rev. Applied 8, 054047 (2017)

Quantum engineering of transistors based on 2D materials heterostructures

Authors: Giuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo, Gianluca Fiori

Abstract: Quantum engineering entails atom by atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are… ▽ More Quantum engineering entails atom by atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of practical realisation of the next generation atomically thin transistors? In this perspective we analyse the outlook and the challenges of quantum- engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage. △ Less

Submitted 17 March, 2018; originally announced March 2018.

Comments: 15 pages, 4 figures

Journal ref: Nature Nanotechnology Vol. 13, pp. 183-191, 2018

Water-based and Biocompatible 2D Crystal Inks: from Ink Formulation to All- Inkjet Printed Heterostructures

Authors: D. McManus, S. Vranic, F. Withers, V. Sanchez-Romaguera, M. Macucci, H. Yang, R. Sorrentino, K. Parvez, S. Son, G. Iannaccone, K. Kostarelos, G. Fiori, C. Casiraghi

Abstract: Fully exploiting the properties of 2D crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate, including plastic. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, available inkjet printable formulations are still far from ideal as they are either bas… ▽ More Fully exploiting the properties of 2D crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate, including plastic. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, available inkjet printable formulations are still far from ideal as they are either based on toxic solvents, have low concentration, or require time-consuming and expensive formulation processing. In addition, none of those formulations are suitable for thin-film heterostructure fabrication due to the re-mixing of different 2D crystals, giving rise to uncontrolled interfaces, which results in poor device performance and lack of reproducibility. In this work we show a general formulation engineering approach to achieve highly concentrated, and inkjet printable water-based 2D crystal formulations, which also provides optimal film formation for multi-stack fabrication. We show examples of all-inkjet printed heterostructures, such as large area arrays of photosensors on plastic and paper and programmable logic memory devices, fully exploiting the design flexibility of inkjet printing. Finally, dose-escalation cytotoxicity assays in vitro also confirm the inks biocompatible character, revealing the possibility of extending use of such 2D crystal formulations to drug delivery and biomedical applications. △ Less

Submitted 2 May, 2017; originally announced May 2017.

Journal ref: Nature Nanotechnology 12, 343 (2017)

Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation

Authors: Satender Kataria, Stefan Wagner, Teresa Cusati, Alessandro Fortunelli, Giuseppe Iannaccone, Himadri Pandey, Gianluca Fiori, Max C. Lemme

Abstract: Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a wide range of deposition temperatures from 600 °C to 1000 °C. However, a direct comparison of growth parameters and resulting material properties has not been made… ▽ More Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a wide range of deposition temperatures from 600 °C to 1000 °C. However, a direct comparison of growth parameters and resulting material properties has not been made so far. Here, we present a systematic experimental and theoretical investigation of optical properties of monolayer MoS$_2$ grown at different temperatures. Micro-Raman and photoluminescence (PL) studies reveal observable inhomogeneities in optical properties of the as-grown single crystalline grains of MoS$_2$. Close examination of the Raman and PL features clearly indicate that growth-induced strain is the main source of distinct optical properties. We carry out density functional theory calculations to describe the interaction of growing MoS$_2$ layers with the growth substrate as the origin of strain. Our work explains the variation of band gap energies of CVD-grown monolayer MoS$_2$, extracted using PL spectroscopy, as a function of deposition temperature. The methodology has general applicability to model and predict the influence of growth conditions on strain in 2D materials. △ Less

Submitted 1 March, 2017; originally announced March 2017.

Comments: 37 pages, 6 figures, 10 figures in supporting information

Performance of arsenene and antimonene double-gate MOSFETs from first principles

Authors: Giovanni Pizzi, Marco Gibertini, Elias Dib, Nicola Marzari, Giuseppe Iannaccone, Gianluca Fiori

Abstract: In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as chan… ▽ More In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as channels. The accuracy of first-principles approaches in describing electronic properties is combined with the efficiency of tight-binding Hamiltonians based on maximally-localised Wannier functions to compute the transport properties of the devices. These simulations provide for the first time estimates on the upper limits for the electron and hole mobilities in the Takagi's approximation, including spin-orbit and multi-valley effects, and demonstrate that ultra-scaled devices in the sub-10 nm scale show a performance that is compliant with industry requirements. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Comments: 14 pages, includes also Supplementary Information

Journal ref: Nature Communications 7, 12585 (2016)

Heterojunction Hybrid Devices from Vapor Phase Grown MoS$_{2}$

Authors: Chanyoung Yim, Maria O`Brien, Niall McEvoy, Sarah Riazimehr, Heiko Schäfer-Eberwein, Andreas Bablich, Ravinder Pawar, Giuseppe Iannaccone, Clive Downing, Gianluca Fiori, Max C. Lemme, Georg S. Duesberg

Abstract: We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thicknes… ▽ More We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS$_{2}$ layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS$_{2}$. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering. △ Less

Submitted 1 July, 2014; originally announced July 2014.

Comments: 23 pages with 4 figures. This article has been published in Scientific Reports. (26 June 2014, doi:10.1038/srep05458)

Journal ref: Scientific Reports 4 (2014) 5458

Tunneling properties of vertical heterostructures of multilayer hexagonal boron nitride and graphene

Authors: Samantha Bruzzone, Gianluca Fiori, Giuseppe Iannaccone

Abstract: We use first-principle density functional theory (DFT) to study the transport properties of single and double barrier heterostructures realized by stacking multilayer h-BN or BC$_{2}$N, and graphene films between graphite leads. The heterostructures are lattice matched. The considered single barrier systems consist of layers of up to five h-BN or BC$_{2}$N monoatomic layers (Bernal stacking) betwe… ▽ More We use first-principle density functional theory (DFT) to study the transport properties of single and double barrier heterostructures realized by stacking multilayer h-BN or BC$_{2}$N, and graphene films between graphite leads. The heterostructures are lattice matched. The considered single barrier systems consist of layers of up to five h-BN or BC$_{2}$N monoatomic layers (Bernal stacking) between graphite electrodes. The transmission probability of an h-BN barrier exhibits two unusual behaviors: it is very low also in a classically allowed energy region, due to a crystal momentum mismatch between states in graphite and in the dielectric layer, and it is only weakly dependent on energy in the h-BN gap, because the imaginary part of the crystal momentum of h-BN is almost independent of energy. The double barrier structures consist of h-BN films separated by up to three graphene layers. We show that already five layers of h-BN strongly suppress the transmission between graphite leads, and that resonant tunneling cannot be observed because the energy dispersion relation cannot be decoupled in a vertical and a transversal component. △ Less

Submitted 19 December, 2012; originally announced December 2012.

Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling

Authors: Pino D'Amico, Paolo Marconcini, Gianluca Fiori, Giuseppe Iannaccone

Abstract: We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure. Results are obtained from quantum transport simulations based on Non-Equilibrium Green's functions with a tight-binding atomistic Hamiltonian. Interband tunneling is extremely sensitive to the longitudinal electric field, to the nanowire cross s… ▽ More We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure. Results are obtained from quantum transport simulations based on Non-Equilibrium Green's functions with a tight-binding atomistic Hamiltonian. Interband tunneling is extremely sensitive to the longitudinal electric field, to the nanowire cross section, through the gap, and to the material. We have derived an approximate analytical expression for the transmission probability based on WKB theory and on a proper choice of the effective interband tunneling mass, which shows good agreement with results from atomistic quantum simulation. △ Less

Submitted 24 September, 2013; v1 submitted 19 January, 2012; originally announced January 2012.

Comments: 4 pages, 3 figures. Final version, published in IEEE Trans. Nanotechnol. It differs from the previous arXiv version for the title and for some changes in the text and in the references

Journal ref: IEEE Trans. Nanotechnol. 12, 839 (2013)

Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations

Authors: Alessandro Betti, Gianluca Fiori, Giuseppe Iannaccone

Abstract: We present numerical simulations of high field transport in both suspended and deposited armchair graphene nanoribbon (A-GNR) on HfO2 substrate. Drift velocity in suspended GNR does not saturate at high electric field (F), but rather decreases, showing a maximum for F=10 kV/cm. Deposition on HfO2 strongly degrades the drift velocity by up to a factor of 10 with respect to suspended GNRs in the low… ▽ More We present numerical simulations of high field transport in both suspended and deposited armchair graphene nanoribbon (A-GNR) on HfO2 substrate. Drift velocity in suspended GNR does not saturate at high electric field (F), but rather decreases, showing a maximum for F=10 kV/cm. Deposition on HfO2 strongly degrades the drift velocity by up to a factor of 10 with respect to suspended GNRs in the low-field regime, whereas at high fields drift velocity approaches the intrinsic value expected in suspended GNRs. Even in the assumption of perfect edges, the obtained mobility is far behind what expected in two-dimensional graphene, and is further reduced by surface optical phonons. △ Less

Submitted 22 December, 2011; v1 submitted 10 August, 2011; originally announced August 2011.

Comments: 4 pages, 4 figures

Journal ref: Applied Physics Letters 99, 242108 (2011)

A Backscattering Model Incorporating the Effective Carrier Temperature in Nano MOSFET

Authors: Gino Giusi, Giuseppe Iannaccone, Felice Crupi, Umberto Ravaioli

Abstract: In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the same authors which highlighted the importance of considering the partially ballistic transport between the source contact and the top of the potential energy barri… ▽ More In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the same authors which highlighted the importance of considering the partially ballistic transport between the source contact and the top of the potential energy barrier in the channel. The increase of carrier temperature is precisely due to energy dissipation between the source contact and the top of the barrier caused by the high saturation current. To support our discussion, accurate 2D full band Monte Carlo device simulations with quantum correction have been performed in double gate nMOSFETs for different geometries (gate length down to 10 nm), biases and lattice temperatures. Including the effective carrier temperature is especially important to properly treat the high inversion regime, where previous backscattering models usually fail. △ Less

Submitted 15 April, 2011; originally announced April 2011.

Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering

Authors: Alessandro Betti, Gianluca Fiori, Giuseppe Iannaccone

Abstract: We investigate the low-field phonon-limited mobility in armchair graphene nanoribbons (GNRs) using full-band electron and phonon dispersion relations. We show that lateral confinement suppresses the intrinsic mobility of GNRs to values typical of common bulk semiconductors, and very far from the impressive experiments on 2D graphene. Suspended GNRs with a width of 1 nm exhibit a mobility close to… ▽ More We investigate the low-field phonon-limited mobility in armchair graphene nanoribbons (GNRs) using full-band electron and phonon dispersion relations. We show that lateral confinement suppresses the intrinsic mobility of GNRs to values typical of common bulk semiconductors, and very far from the impressive experiments on 2D graphene. Suspended GNRs with a width of 1 nm exhibit a mobility close to 500 cm^2/Vs at room temperature, whereas if the same GNRs are deposited on HfO2 mobility is further reduced to about 60 cm^2/Vs due to surface phonons. We also show the occurrence of polaron formation, leading to band gap renormalization of ~118 meV for 1 nm-wide armchair GNRs. △ Less

Submitted 1 March, 2011; originally announced March 2011.

Comments: 11 pages, 4 figures

Journal ref: Appl. Phys. Lett. 98 (2011) 212111

Atomistic investigation of low-field mobility in graphene nanoribbons

Authors: Alessandro Betti, Gianluca Fiori, Giuseppe Iannaccone

Abstract: We have investigated the main scattering mechanisms affecting mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects, and ionized impurities, and we have defined a methodology based on simulations of statistically meaningful ensembles of nanoribbon segments. Edge disorder heavi… ▽ More We have investigated the main scattering mechanisms affecting mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects, and ionized impurities, and we have defined a methodology based on simulations of statistically meaningful ensembles of nanoribbon segments. Edge disorder heavily affects mobility at room temperature in narrower nanoribbons, whereas charged impurities and phonons are hardly the limiting factors. Results are favorably compared to the few experiments available in the literature. △ Less

Submitted 1 March, 2011; originally announced March 2011.

Comments: 7 pages, 9 figures

Journal ref: published in IEEE Trans. Electr. Dev. 2011

Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs

Authors: Gino Giusi, Giuseppe Iannaccone, Debrabata Maji, Felice Crupi

Abstract: In this work we propose a fully experimental method to extract the barrier lowering in short-channel saturated MOSFETs using the Lundstrom backscattering transport model in a one sub-band approximation and carrier degeneracy. The knowledge of the barrier lowering at the operative bias point in the inversion regime is of fundamental importance in device scaling. At the same time we obtain also an e… ▽ More In this work we propose a fully experimental method to extract the barrier lowering in short-channel saturated MOSFETs using the Lundstrom backscattering transport model in a one sub-band approximation and carrier degeneracy. The knowledge of the barrier lowering at the operative bias point in the inversion regime is of fundamental importance in device scaling. At the same time we obtain also an estimate of the backscattering ratio and of the saturation inversion charge. Respect to previously reported works on extraction of transport parameters based on the Lundstrom model, our extraction method is fully consistent with it, whereas other methods make a number of approximations in the calculation of the saturation inversion charge which are inconsistent with the model. The proposed experimental extraction method has been validated and applied to results from device simulation and measurements on short-channel poly-Si/SiON gate nMOSFETs with gate length down to 70 nm. Moreover we propose an extension of the backscattering model to the case of 2D geometries (e.g. bulk MOSFETs). We found that, in this case, the backscattering is governed by the carrier transport in a few nanometers close to the silicon/oxide interface and that the value of the backscattering ratio obtained with a 1D approach can be significantly different from the real 2D value. △ Less

Submitted 29 December, 2010; originally announced December 2010.

Journal ref: IEEE Transaction on Electron Devices, Vol. 57, no. 9, pp. 2132-2137, Sept. 2010

A microscopically accurate model of partially ballistic nanoMOSFETs in saturation based on channel backscattering

Authors: Gino Giusi, Giuseppe Iannaccone, Felice Crupi

Abstract: We propose a model for partially ballistic MOSFETs and for channel backscattering that is alternative to the well known Lundstrom model and is more accurate from the point of view of the actual energy distribution of carriers. The key point is that we do not use the concept of "virtual source". Our model differs from the Lundstrom model in two assumptions: i) the reflection coefficients from the t… ▽ More We propose a model for partially ballistic MOSFETs and for channel backscattering that is alternative to the well known Lundstrom model and is more accurate from the point of view of the actual energy distribution of carriers. The key point is that we do not use the concept of "virtual source". Our model differs from the Lundstrom model in two assumptions: i) the reflection coefficients from the top of the energy barrier to the drain and from top of the barrier to the source are approximately equal (whereas in the Lundstrom model the latter is zero), and ii) inelastic scattering is assumed through a ratio of the average velocity of forward-going carriers to that of backward-going carriers at the top of the barrier kv > 1 (=1 in the Lundstrom model). We support our assumptions with 2D full band Monte Carlo (MC) simulations including quantum corrections in nMOSFETs. We show that our model allows to extract from the electrical characteristics a backscattering coefficient very close to that obtained from the solution of the Boltzmann transport equation, whereas the Lundstrom model overestimates backscattering by up to 40%. △ Less

Submitted 29 December, 2010; originally announced December 2010.

Journal ref: IEEE Transaction on Electron Devices, 2011

Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions

Authors: I. Deretzis, G. Fiori, G. Iannaccone, A. La Magna

Abstract: We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrödinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and doping effects strongly influence the transport properties, giving rise to conductance asymmetries an… ▽ More We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrödinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and doping effects strongly influence the transport properties, giving rise to conductance asymmetries and a selective suppression of the subband formation. Junction electrostatics and p-type characteristics drive the conduction mechanism in the case of high work function Au, Pd and Pt electrodes, while contact resistance becomes dominant in the case of Al. △ Less

Submitted 21 October, 2010; originally announced October 2010.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. B 82, 161413(R) (2010)

Electric-Field-control of spin rotation in bilayer graphene

Authors: Paolo Michetti, Patrik Recher, Giuseppe Iannaccone

Abstract: The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer. Spintronics also offers the possibility of devising hybrid devices able to perform logic, communication, and storage operations. Graphene, with its potentially lon… ▽ More The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer. Spintronics also offers the possibility of devising hybrid devices able to perform logic, communication, and storage operations. Graphene, with its potentially long spin-coherence length, is a promising material for spin-encoded information transport. However, the small spin-orbit interaction is also a limitation for the design of conventional devices based on the canonical Datta-Das spin-FET. An alternative solution can be found in magnetic doping of graphene, or, as discussed in the present work, in exploiting the proximity effect between graphene and Ferromagnetic Oxides (FOs). Graphene in proximity to FO experiences an exchange proximity interaction (EPI), that acts as an effective Zeeman field for electrons in graphene, inducing a spin precession around the magnetization axis of the FO. Here we show that in an appropriately designed double-gate field-effect transistor, with a bilayer graphene channel and FO used as a gate dielectric, spin-precession of carriers can be turned ON and OFF with the application of a differential voltage to the gates. This feature is directly probed in the spin-resolved conductance of the bilayer. △ Less

Submitted 1 July, 2010; originally announced July 2010.

Journal ref: Nano Lett., 2010, 10 (11), pp 4463-4469

Model of tunneling transistors based on graphene on SiC

Authors: Paolo Michetti, Martina Cheli, Giuseppe Iannaccone

Abstract: Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC Tunnel Field-Effect Transistors (TFETs), and assess the DC and high frequency figures of merit. The steep subthreshold behavior can e… ▽ More Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC Tunnel Field-Effect Transistors (TFETs), and assess the DC and high frequency figures of merit. The steep subthreshold behavior can enable I_{ON}/I_{OFF} ratios exceeding 10^4 even with a low supply voltage of 0.15 V, for devices with gatelength down to 30 nm. Intrinsic transistor delays smaller than 1 ps are obtained. These factors make the device an interesting candidate for low-power nanoelectronics beyond CMOS. △ Less

Submitted 30 June, 2010; originally announced June 2010.

Journal ref: Appl. Phys. Lett., 96(13) 133508 (2010)

Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach

Authors: Gianluca Fiori, S. Lebègue, A. Betti, P. Michetti, M. Klintenberg, O. Eriksson, Giuseppe Iannaccone

Abstract: In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding… ▽ More In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large Ion and Ion/Ioff ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration. △ Less

Submitted 3 April, 2010; originally announced April 2010.

Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies

Authors: I. Deretzis, G. Fiori, G. Iannaccone, A. La Magna

Abstract: We present a systematic study of electron backscattering phenomena during conduction for graphene nanoribbons with single-vacancy scatterers and dimensions within the capabilities of modern lithographic techniques. Our analysis builds upon an \textit{ab initio} parameterized semiempirical model that breaks electron-hole symmetry and nonequilibrium Green's function methods for the calculation of… ▽ More We present a systematic study of electron backscattering phenomena during conduction for graphene nanoribbons with single-vacancy scatterers and dimensions within the capabilities of modern lithographic techniques. Our analysis builds upon an \textit{ab initio} parameterized semiempirical model that breaks electron-hole symmetry and nonequilibrium Green's function methods for the calculation of the conductance distribution $g$. The underlying mechanism is based on wavefunction localizations and perturbations that in the case of the first $π-π^*$ plateau can give rise to impurity-like pseudogaps with both donor and acceptor characteristics. Confinement and geometry are crucial for the manifestation of such effects. Self-consistent quantum transport calculations characterize vacancies as local charging centers that can induce electrostatic inhomogeneities on the ribbon topology. △ Less

Submitted 4 February, 2010; originally announced February 2010.

Comments: 5 pages, 4 figures, accepted for publication at PRB

Journal ref: Phys. Rev. B 81, 085427 (2010)

Enhanced shot noise in carbon nanotube field-effect transistors

Authors: Alessandro Betti, Gianluca Fiori, Giuseppe Iannaccone

Abstract: We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green functions formalism, and on a Monte Carlo approach to reproduce injection statistics. Noise enhancement is due to the correlation between trapping of holes from t… ▽ More We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green functions formalism, and on a Monte Carlo approach to reproduce injection statistics. Noise enhancement is due to the correlation between trapping of holes from the drain into quasi-bound states in the channel and thermionic injection of electrons from the source, and can lead to an appreciable Fano factor of 1.22 at room temperature. △ Less

Submitted 23 January, 2010; originally announced January 2010.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 95 (2009) 252108

Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC

Authors: Martina Cheli, Paolo Michetti, Giuseppe Iannaccone

Abstract: In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require prohibitive lithography - and exhibits a wider gap than other alternative options, such as bilayer graphene. Here we propose a model and assess the achievable perf… ▽ More In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require prohibitive lithography - and exhibits a wider gap than other alternative options, such as bilayer graphene. Here we propose a model and assess the achievable performance of a nanoscale FET based on epitaxial graphene on SiC, conducting an exploration of the design parameter space. We show that the current can be modulated by 4 orders of magnitude; for digital applications an Ion /Ioff ratio of 50 and a subthreshold slope of 145 mV/decade can be obtained with a supply voltage of 0.25 V. This represents a significant progress towards solid-state integration of graphene electronics, but not yet sufficient for digital applications. △ Less

Submitted 25 September, 2009; originally announced September 2009.

Analytical model of 1D Carbon-based Schottky-Barrier Transistors

Authors: Paolo Michetti, Giuseppe Iannaccone

Abstract: Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs)… ▽ More Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs), taking into account on equal footing both SB contacts and FFE transport regime. Intermediate transport is introduced within the Buttiker probe approach to dissipative transport, in which a non-ballistic transistor is seen as a suitable series of individually ballistic channels. Our model permits the study of the interplay of SBs and ambipolar FFE transport, and in particular of the transition between SB-limited and dissipation-limited transport. △ Less

Submitted 21 September, 2009; originally announced September 2009.

Journal ref: IEEE Trans. El. Dev. 57(7) 1616 (2010)

Ultra-low-voltage bilayer graphene tunnel FET

Authors: G. Fiori, G. Iannaccone

Abstract: In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of graphene nanoribbons. Our investigation is ba… ▽ More In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of graphene nanoribbons. Our investigation is based on the solution of the coupled Poisson and Schroedinger equations in three dimensions, within the Non-Equilibrium Green (NEGF) formalism on a Tight Binding Hamiltonian. We show that the small achievable gap of only few hundreds meV is still enough for promising TFET operation, providing a large Ion/Ioff ratio in excess of 10^3 even for a supply voltage of only 0.1 V. Key to this performance is the low quantum capacitance of bilayer graphene, which permits to obtain an extremely small sub-threshold swing S smaller than 20 mV/decade at room temperature. △ Less

Submitted 6 June, 2009; originally announced June 2009.

Comments: 10 pages, 3 figures

Statistical theory of shot noise in quasi-1D Field Effect Transistors in the presence of electron-electron interaction

Authors: Alessandro Betti, Gianluca Fiori, Giuseppe Iannaccone

Abstract: We present an expression for the shot noise power spectral density in quasi-one dimensional conductors electrostatically controlled by a gate electrode, that includes the effects of Coulomb interaction and of Pauli exclusion among charge carriers. In this sense, our expression extends the well known Landauer-Buttiker noise formula to include the effect of Coulomb interaction through induced fluc… ▽ More We present an expression for the shot noise power spectral density in quasi-one dimensional conductors electrostatically controlled by a gate electrode, that includes the effects of Coulomb interaction and of Pauli exclusion among charge carriers. In this sense, our expression extends the well known Landauer-Buttiker noise formula to include the effect of Coulomb interaction through induced fluctuations in the device potential. Our approach is based on the introduction of statistical properties of the scattering matrix and on a second-quantization many-body description. From a quantitative point of view, statistical properties are obtained by means of Monte Carlo simulations on a ensemble of different configurations of injected states, requiring the solution of the Poisson-Schrodinger equation on a three-dimensional grid, with the non-equilibrium Green functions formalism. In a series of example, we show that failure to consider the effects of Coulomb interaction on noise leads to a gross overestimation of the noise spectrum of quasi-one dimensional devices. △ Less

Submitted 23 January, 2010; v1 submitted 27 April, 2009; originally announced April 2009.

Journal ref: Phys. Rev. B 81 (2010) 035329

Shot noise suppression in quasi one-dimensional Field Effect Transistors

Authors: Alessandro Betti, Gianluca Fiori, Giuseppe Iannaccone

Abstract: We present a novel method for the evaluation of shot noise in quasi one-dimensional field-effect transistors, such as those based on carbon nanotubes and silicon nanowires. The method is derived by using a statistical approach within the second quantization formalism and allows to include both the effects of Pauli exclusion and Coulomb repulsion among charge carriers. In this way it extends Land… ▽ More We present a novel method for the evaluation of shot noise in quasi one-dimensional field-effect transistors, such as those based on carbon nanotubes and silicon nanowires. The method is derived by using a statistical approach within the second quantization formalism and allows to include both the effects of Pauli exclusion and Coulomb repulsion among charge carriers. In this way it extends Landauer-Buttiker approach by explicitly including the effect of Coulomb repulsion on noise. We implement the method through the self-consistent solution of the 3D Poisson and transport equations within the NEGF framework and a Monte Carlo procedure for populating injected electron states. We show that the combined effect of Pauli and Coulomb interactions reduces shot noise in strong inversion down to 23 % of the full shot noise for a gate overdrive of 0.4 V, and that neglecting the effect of Coulomb repulsion would lead to an overestimation of noise up to 180 %. △ Less

Submitted 23 January, 2010; v1 submitted 30 December, 2008; originally announced December 2008.

Comments: Changed content, 7 pages,5 figures

Journal ref: IEEE Trans. Electron Devices, 56, 9 (2009) 2137-2143

A semi-analytical model of Bilayer Graphene Field Effect Transistor

Authors: Martina Cheli, Gianluca Fiori, Giuseppe Iannaccone

Abstract: Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space and to find a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic… ▽ More Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space and to find a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic transport assumptions, takes into account bilayer-graphene tunable gap and self polarization, and includes all band-to-band tunneling current components, which are shown to represent the major limitation to transistor operation, because the limited achievable energy gap is not sufficient to obtain a large Ion/Ioff ratio. △ Less

Submitted 25 September, 2009; v1 submitted 27 December, 2008; originally announced December 2008.

Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime

Authors: Paolo Michetti, Giorgio Mugnaini, Giuseppe Iannaccone

Abstract: The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have been proposed, based on the introduction of a backscattering coefficient, or numerical approaches consisting in the MonteCarlo solution of the Boltzmann transpor… ▽ More The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have been proposed, based on the introduction of a backscattering coefficient, or numerical approaches consisting in the MonteCarlo solution of the Boltzmann transport equation or in the introduction of dissipation in quantum transport descriptions. In this paper we propose a very simple analytical model to seamlessly cover the whole range of transport regimes in generic quasi-one dimensional field-effect transistors, and apply it to silicon nanowire transistors. The model is based on describing a generic transistor as a chain of ballistic nanowire transistors in series, or as the series of a ballistic transistor and a drift-diffusion transistor operating in the triode region. As an additional result, we find a relation between the mobility and the mean free path, that has deep consequences on the understanding of transport in nanoscale devices. △ Less

Submitted 5 October, 2009; v1 submitted 9 December, 2008; originally announced December 2008.

Journal ref: IEEE Trans. El. Dev. 56 (7), 1402 (2009)

Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation

Authors: G. Giusi, G. Iannaccone, U. Ravaioli

Abstract: In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations. Warm electron injection is characterized by an applied VDS smaller than 3.15 V, so that electrons cannot easily accumulate a kinetic energy larger than the height of the Si/SiO2 barrier. We perform a time-dependent simulation of the… ▽ More In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations. Warm electron injection is characterized by an applied VDS smaller than 3.15 V, so that electrons cannot easily accumulate a kinetic energy larger than the height of the Si/SiO2 barrier. We perform a time-dependent simulation of the program operation where the local gate current density is computed with a continuum-based method and is adiabatically separated from the 2D full Monte Carlo simulation used for obtaining the electron distribution in the phase space. In this way we are able to compute the time evolution of the charge stored in the nitride and of the threshold voltages corresponding to forward and reverse bias. We show that warm electron injection is a viable option for NOR programming in order to reduce power supply, preserve reliability and CMOS logic level compatibility. In addition, it provides a well localized charge, offering interesting perspectives for multi-level and dual bit operation, even in devices with negligible short channel effects. △ Less

Submitted 28 October, 2008; originally announced October 2008.

Journal ref: Journal of applied Physics, 2009, vol. 106, no. 10, pp. 104506 - 104506-8

Study of Warm Electron Injection in Double Gate SONOS by Full Band Monte Carlo Simulation

Authors: G. Giusi, G. Iannaccone, M. Mohamed, U. Ravaioli

Abstract: In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source voltage VDS smaller than 3 V, so that programming occurs via electrons tunneling through a potential barrier whose height has been effectively reduced by the acc… ▽ More In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source voltage VDS smaller than 3 V, so that programming occurs via electrons tunneling through a potential barrier whose height has been effectively reduced by the accumulated kinetic energy. Particle energy distribution at the semiconductor/oxide interface is studied for different bias conditions and different positions along the channel. The gate current is calculated with a continuum-based post-processing method as a function of the particle distribution obtained from Monte Carlo. Simulation results show that the gate current increases by several orders of magnitude with increasing drain bias and warm electron injection can be an interesting option for programming when short channel effects prohibit the application of larger drain bias. △ Less

Submitted 28 October, 2008; originally announced October 2008.

Journal ref: Electron Device Letters, Nov.2008, Vol. 29, 11, pp. 1242-1244

On the possibility of tunable-gap bilayer graphene FET

Authors: G. Fiori, G. Iannaccone

Abstract: We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schroedinger equations within the NEGF formalism. We show that the concept work… ▽ More We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schroedinger equations within the NEGF formalism. We show that the concept works, but bandgap opening is not strong enough to suppress band-to-band tunneling in order to obtain a sufficiently large Ion/Ioff ratio for CMOS device operation. △ Less

Submitted 1 October, 2008; originally announced October 2008.

Comments: 10 pages, 3 figures, submitted to IEEE EDL

Journal ref: IEEE Electron Device Letters, Vol. 30, pp. 261-264, 2009.

Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs

Authors: Youngki Yoon, Gianluca Fiori, Seokmin Hong, Giuseppe Iannaccone, Jing Guo

Abstract: We present an atomistic 3D simulation study of the performance of graphene nanoribbon (GNR) Schottky barrier (SB) FETs and transistors with doped reservoirs (MOSFETs) by means of the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green's function (NEGF) formalism. Ideal MOSFETs show slightly better electrical performance, for both digital and THz app… ▽ More We present an atomistic 3D simulation study of the performance of graphene nanoribbon (GNR) Schottky barrier (SB) FETs and transistors with doped reservoirs (MOSFETs) by means of the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green's function (NEGF) formalism. Ideal MOSFETs show slightly better electrical performance, for both digital and THz applications. The impact of non-idealities on device performance has been investigated, taking into account the presence of single vacancy, edge roughness and ionized impurities along the channel. In general, MOSFETs show more robust characteristics than SBFETs. Edge roughness and single vacancy defect largely affect performance of both device types. △ Less

Submitted 10 July, 2008; originally announced July 2008.

Comments: to appear in IEEE Trans. on Electron Devices

Quantum analysis of shot noise suppression in a series of tunnel barriers

Authors: P. Marconcini, M. Macucci, G. Iannaccone, B. Pellegrini

Abstract: We report the results of an analysis, based on a straightforward quantum-mechanical model, of shot noise suppression in a structure containing cascaded tunneling barriers. Our results exhibit a behavior that is in sharp contrast with existing semiclassical models for this particular type of structure, which predict a limit of 1/3 for the Fano factor as the number of barriers is increased. The or… ▽ More We report the results of an analysis, based on a straightforward quantum-mechanical model, of shot noise suppression in a structure containing cascaded tunneling barriers. Our results exhibit a behavior that is in sharp contrast with existing semiclassical models for this particular type of structure, which predict a limit of 1/3 for the Fano factor as the number of barriers is increased. The origin of this discrepancy is investigated and attributed to the presence of localization on the length scale of the mean free path, as a consequence of the strictly 1-dimensional nature of disorder, which does not create mode mixing, while no localization appears in common semiclassical models. We expect localization to be indeed present in practical situations with prevalent 1-D disorder, and the existing experimental evidence appears to be consistent with such a prediction. △ Less

Submitted 3 July, 2009; v1 submitted 29 February, 2008; originally announced February 2008.

Comments: This paper has been replaced with a new version (4 pages, 4 figures)

Journal ref: Phys. Rev. B 79, 241307(R) (2009)

Simulation of Graphene Nanoribbon Field Effect Transistors

Authors: G. Fiori, G. Iannaccone

Abstract: We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibrium Green's Function formalism and a tight-binding hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced… ▽ More We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibrium Green's Function formalism and a tight-binding hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity on the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires effective nanoribbon width of 1-2 nm, that could be obtained with periodic etching patterns or stress patterns. △ Less

Submitted 7 January, 2008; v1 submitted 14 April, 2007; originally announced April 2007.

Journal ref: IEEE Electron Device Letters, Vol. 28, Issue 8, pp. 760 - 762, 2007