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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:0909.4678 (cond-mat)
[Submitted on 25 Sep 2009]

Title:Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC

Authors:Martina Cheli, Paolo Michetti, Giuseppe Iannaccone
View a PDF of the paper titled Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC, by Martina Cheli and 2 other authors
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Abstract: In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require prohibitive lithography - and exhibits a wider gap than other alternative options, such as bilayer graphene. Here we propose a model and assess the achievable performance of a nanoscale FET based on epitaxial graphene on SiC, conducting an exploration of the design parameter space. We show that the current can be modulated by 4 orders of magnitude; for digital applications an Ion /Ioff ratio of 50 and a subthreshold slope of 145 mV/decade can be obtained with a supply voltage of 0.25 V. This represents a significant progress towards solid-state integration of graphene electronics, but not yet sufficient for digital applications.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:0909.4678 [cond-mat.mes-hall]
  (or arXiv:0909.4678v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.0909.4678
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1109/TED.2010.2051487
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Submission history

From: Martina Cheli [view email]
[v1] Fri, 25 Sep 2009 12:31:51 UTC (856 KB)
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