Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 27 Dec 2008 (v1), last revised 25 Sep 2009 (this version, v2)]
Title:A semi-analytical model of Bilayer Graphene Field Effect Transistor
View PDFAbstract: Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space and to find a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic transport assumptions, takes into account bilayer-graphene tunable gap and self polarization, and includes all band-to-band tunneling current components, which are shown to represent the major limitation to transistor operation, because the limited achievable energy gap is not sufficient to obtain a large Ion/Ioff ratio.
Submission history
From: Martina Cheli [view email][v1] Sat, 27 Dec 2008 12:19:10 UTC (892 KB)
[v2] Fri, 25 Sep 2009 10:58:11 UTC (1,446 KB)
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