Showing 1–50 of 67 results for author: Han, K

DistMLIP: A Distributed Inference Platform for Machine Learning Interatomic Potentials

Authors: Kevin Han, Bowen Deng, Amir Barati Farimani, Gerbrand Ceder

Abstract: Large-scale atomistic simulations are essential to bridge computational materials and chemistry to realistic materials and drug discovery applications. In the past few years, rapid developments of machine learning interatomic potentials (MLIPs) have offered a solution to scale up quantum mechanical calculations. Parallelizing these interatomic potentials across multiple devices poses a challenging… ▽ More Large-scale atomistic simulations are essential to bridge computational materials and chemistry to realistic materials and drug discovery applications. In the past few years, rapid developments of machine learning interatomic potentials (MLIPs) have offered a solution to scale up quantum mechanical calculations. Parallelizing these interatomic potentials across multiple devices poses a challenging, but promising approach to further extending simulation scales to real-world applications. In this work, we present DistMLIP, an efficient distributed inference platform for MLIPs based on zero-redundancy, graph-level parallelization. In contrast to conventional space-partitioning parallelization, DistMLIP enables efficient MLIP parallelization through graph partitioning, allowing multi-device inference on flexible MLIP model architectures like multi-layer graph neural networks. DistMLIP presents an easy-to-use, flexible, plug-in interface that enables distributed inference of pre-existing MLIPs. We demonstrate DistMLIP on four widely used and state-of-the-art MLIPs: CHGNet, MACE, TensorNet, and eSEN. We show that existing foundational potentials can perform near-million-atom calculations at the scale of a few seconds on 8 GPUs with DistMLIP. △ Less

Submitted 28 May, 2025; originally announced June 2025.

Self-patterning of Liquid Field's Metal for Enhanced Performance of Two-dimensional Semiconductor

Authors: Kwanghee Han, Heeyeon Lee, Minseong Kwon, Vinod Menon, Chaun Jang, Young Duck Kim

Abstract: Two-dimensional (2D) van der Waals semiconductors show promise for atomically thin flexible and transparent optoelectronic devices in future technologies.However, developing high-performance field-effect transistors (FETs) based on 2D materials is impeded by two key challenges, the high contact resistance at the 2D semiconductors-metal interface and the limited effective doping strategies. Here, w… ▽ More Two-dimensional (2D) van der Waals semiconductors show promise for atomically thin flexible and transparent optoelectronic devices in future technologies.However, developing high-performance field-effect transistors (FETs) based on 2D materials is impeded by two key challenges, the high contact resistance at the 2D semiconductors-metal interface and the limited effective doping strategies. Here, we present a novel approach to overcome these challenges using self-propagating liquid Fields metal, a eutectic alloy with a low melting point of approximately 62 C. By modifying pre-patterned electrodes on WSe2 FETs through the deposition of Fields metal onto contact pad edges followed by vacuum annealing, we create new semimetal electrodes that seamlessly incorporate the liquid metal into 2D semiconductors. This integration preserves the original electrode architecture while transforming to semimetal compositions of Fields metal such as Bi, In, and Sn modifies the work functions to 2D semiconductors, resulting in reduced contact resistance without inducing Fermi-level pinning and charge carrier mobilities. Our method enhances the electrical performance of 2D devices and opens new avenues for designing high-resolution liquid metal circuits suitable for stretchable, flexible, and wearable 2D semiconductor applications. △ Less

Submitted 24 May, 2025; originally announced May 2025.

Comments: 17 pages, 4 figures

Spontaneous Enhancement of Dzyaloshinskii-Moriya Interaction via Field-Cooling-Induced Interface Engineering in 2D van der Waals Ferromagnetic ternary Tellurides

Authors: Shian Xia, Yan Luo, Iftikhar Ahmed Malik, Xinyi Zhou, Keying Han, Yue Sun, Haoyun Lin, Hanqing Shi, Yingchun Cheng, Vanessa Li Zhang, Yi Du, Sheng Liu, Chao Zhu, Ting Yu

Abstract: The emergence of two-dimensional (2D) van der Waals (vdW) ferromagnets has opened new avenues for exploring topological spin textures and their applications in next-generation spintronics. Among these materials, Fe3GaTe2 (FGaT) emerges as a model system due to its room-temperature skyrmion phases, which are stabilized by strong Dzyaloshinskii-Moriya interaction (DMI). However, the atomistic origin… ▽ More The emergence of two-dimensional (2D) van der Waals (vdW) ferromagnets has opened new avenues for exploring topological spin textures and their applications in next-generation spintronics. Among these materials, Fe3GaTe2 (FGaT) emerges as a model system due to its room-temperature skyrmion phases, which are stabilized by strong Dzyaloshinskii-Moriya interaction (DMI). However, the atomistic origins of DMI in centrosymmetric vdW lattices remain elusive. Here, we report a spontaneous DMI enhancement mechanism driven by FC in FGaT and its analog Fe3GeTe2 (FGeT). Combining Raman spectroscopy and scanning transmission electron microscopy (STEM), we have observed the irreversible precipitation of FeTe2 in annealed FGaT. The resulting FeTe2/FGaT heterostructure is considered to break the symmetry and significantly enhance the DMI. Furthermore, similar phenomenon has been observed in the family ferromagnetic material FGeT as well. Additionally, the precipitation of FeTe2 varies significantly with different thicknesses of FGaT, aligning closely with the reported behavior of skyrmions. This discovery provides new insights into the mechanisms behind the origin of the DMI in ternary tellurides, paving the way for advanced spintronic applications. △ Less

Submitted 17 May, 2025; v1 submitted 11 May, 2025; originally announced May 2025.

Photo-induced Dynamics and Momentum Distribution of Chiral Charge Density Waves in 1T-TiSe$_{2}$

Authors: Qingzheng Qiu, Sae Hwan Chun, Jaeku Park, Dogeun Jang, Li Yue, Yeongkwan Kim, Yeojin Ahn, Mingi Jho, Kimoon Han, Xinyi Jiang, Qian Xiao, Tao Dong, Jia-Yi Ji, Nanlin Wang, Jeroen van den Brink, Jasper van Wezel, Yingying Peng

Abstract: Exploring the photoinduced dynamics of chiral states offers promising avenues for advanced control of condensed matter systems. Photoinduced or photoenhanced chirality in 1T-TiSe$_{2}$ has been suggested as a fascinating platform for optical manipulation of chiral states. However, the mechanisms underlying chirality training and its interplay with the charge density wave (CDW) phase remain elusive… ▽ More Exploring the photoinduced dynamics of chiral states offers promising avenues for advanced control of condensed matter systems. Photoinduced or photoenhanced chirality in 1T-TiSe$_{2}$ has been suggested as a fascinating platform for optical manipulation of chiral states. However, the mechanisms underlying chirality training and its interplay with the charge density wave (CDW) phase remain elusive. Here, we use time-resolved X-ray diffraction (tr-XRD) with circularly polarized pump lasers to probe the photoinduced dynamics of chirality in 1T-TiSe$_{2}$. We observe a notable ($\sim$20%) difference in CDW intensity suppression between left- and right-circularly polarized pumps. Additionally, we reveal momentum-resolved circular dichroism arising from domains of different chirality, providing a direct link between CDW and chirality. An immediate increase in CDW correlation length upon laser pumping is detected, suggesting the photoinduced expansion of chiral domains. These results both advance the potential of light-driven chirality by elucidating the mechanism driving chirality manipulation in TiSe$_2$, and they demonstrate that tr-XRD with circularly polarized pumps is an effective tool for chirality detection in condensed matter systems. △ Less

Submitted 4 February, 2025; originally announced February 2025.

Comments: 6 pages, 4 figures

Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2

Authors: Lihao Zhang, Miao He, Xiaoyu Wang, Haodong Zhang, Keying Han, Yonglai Liu, Lei Zhang, Yingchun Cheng, Jie Pan, Zhe Qu, Zhe Wang

Abstract: We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs consistently at around 0.625 V across multiple devices and temperatures, highlighting the robustness of the effect. To understand this behavior, we developed a… ▽ More We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs consistently at around 0.625 V across multiple devices and temperatures, highlighting the robustness of the effect. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states (DOS) at high energy levels. By adjusting the DOS weighting at different k points to account for misalignment between the crystal structure of electrodes in experimental devices, we improved agreement between experimental and theoretical inversion voltages. Our results provide valuable insight into the voltage-controlled spin injection and detection in two-dimensional magnetic tunnel junctions, with implications for the development of energy-efficient spintronic devices. △ Less

Submitted 10 January, 2025; originally announced January 2025.

Comments: 4 Figures

Journal ref: Journal of Physics D: Applied Physics, 58, 105005 (2025)

Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure

Authors: Tao Hu, Xinpei Jia, Runhao Han, Jia Yang, Mingkai Bai, Saifei Dai, Zeqi Chen, Yajing Ding, Shuai Yang, Kai Han, Yanrong Wang, Jing Zhang, Yuanyuan Zhao, Xiaoyu Ke, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye

Abstract: We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) gate structure. We find that the MW first increases and then remains almost constant with the increasing thickness of the top Al2O3. The phenomenon is attributed to the lower electric… ▽ More We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) gate structure. We find that the MW first increases and then remains almost constant with the increasing thickness of the top Al2O3. The phenomenon is attributed to the lower electric field of the ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ in the MIFIS structure with a thicker top Al2O3 after a program operation. The lower electric field makes the charges trapped at the top Al2O3/Hf0.5Zr0.5O$_2$ interface, which are injected from the metal gate, cannot be retained. Furthermore, we study the effect of the top Al$_2$O$_3$ interlayer thickness on the reliability (endurance characteristics and retention characteristics). We find that the MIFIS structure with a thicker top Al$_2$O$_3$ interlayer has poorer retention and endurance characteristics. Our work is helpful in deeply understanding the effect of top interlayer thickness on the MW and reliability of Si-FeFETs with MIFIS gate stacks. △ Less

Submitted 13 November, 2024; originally announced November 2024.

Comments: 7 pages, 12 figures

MatPilot: an LLM-enabled AI Materials Scientist under the Framework of Human-Machine Collaboration

Authors: Ziqi Ni, Yahao Li, Kaijia Hu, Kunyuan Han, Ming Xu, Xingyu Chen, Fengqi Liu, Yicong Ye, Shuxin Bai

Abstract: The rapid evolution of artificial intelligence, particularly large language models, presents unprecedented opportunities for materials science research. We proposed and developed an AI materials scientist named MatPilot, which has shown encouraging abilities in the discovery of new materials. The core strength of MatPilot is its natural language interactive human-machine collaboration, which augme… ▽ More The rapid evolution of artificial intelligence, particularly large language models, presents unprecedented opportunities for materials science research. We proposed and developed an AI materials scientist named MatPilot, which has shown encouraging abilities in the discovery of new materials. The core strength of MatPilot is its natural language interactive human-machine collaboration, which augments the research capabilities of human scientist teams through a multi-agent system. MatPilot integrates unique cognitive abilities, extensive accumulated experience, and ongoing curiosity of human-beings with the AI agents' capabilities of advanced abstraction, complex knowledge storage and high-dimensional information processing. It could generate scientific hypotheses and experimental schemes, and employ predictive models and optimization algorithms to drive an automated experimental platform for experiments. It turns out that our system demonstrates capabilities for efficient validation, continuous learning, and iterative optimization. △ Less

Submitted 10 November, 2024; originally announced November 2024.

Highly tunable moiré superlattice potentials in twisted hexagonal boron nitrides

Authors: Kwanghee Han, Minhyun Cho, Taehyung Kim, Seung Tae Kim, Suk Hyun Kim, Sang Hwa Park, Sang Mo Yang, Kenji Watanabe, Takashi Taniguchi, Vinod Menon, Young Duck Kim

Abstract: Moiré superlattice of twisted hexagonal boron nitride (hBN) has emerged as an advanced atomically thin van der Waals interfacial ferroelectricity platform. Nanoscale periodic ferroelectric moiré domains with out-of-plane potentials in twisted hBN allow the hosting of remote Coulomb superlattice potentials to adjacent two-dimensional materials for tailoring strongly correlated properties. Therefore… ▽ More Moiré superlattice of twisted hexagonal boron nitride (hBN) has emerged as an advanced atomically thin van der Waals interfacial ferroelectricity platform. Nanoscale periodic ferroelectric moiré domains with out-of-plane potentials in twisted hBN allow the hosting of remote Coulomb superlattice potentials to adjacent two-dimensional materials for tailoring strongly correlated properties. Therefore, the new strategies for engineering moiré length, angle, and potential strength are essential for developing programmable quantum materials and advanced twistronics applications devices. Here, we demonstrate the realization of twisted hBN-based moiré superlattice platforms and visualize the moiré domains and ferroelectric properties using Kelvin probe force microscopy. Also, we report the KPFM result of regular moiré superlattice in the large area. It offers the possibility to reproduce uniform moiré structures with precise control piezo stage stacking and heat annealing. We demonstrate the high tunability of twisted hBN moiré platforms and achieve cumulative multi-ferroelectric polarization and multi-level domains with multiple angle mismatched interfaces. Additionally, we observe the quasi-1D anisotropic moiré domains and show the highest resolution analysis of the local built-in strain between adjacent hBN layers compared to the conventional methods. Furthermore, we demonstrate in-situ manipulation of moiré superlattice potential strength using femtosecond pulse laser irradiation, which results in the optical phonon-induced atomic displacement at the hBN moiré interfaces. Our results pave the way to develop precisely programmable moiré superlattice platforms and investigate strongly correlated physics in van der Waals heterostructures. △ Less

Submitted 29 October, 2024; originally announced October 2024.

Comments: 26 pages, 4 figures

Journal ref: Advanced Science 12, 2408034 (2025)

Study of delamination in REBCO coated conductor by transmission electron microscopy

Authors: Yan Xin, Jun Lu, Ke Han

Abstract: Delamination strength of REBCO is very important for its applications in large magnet projects. This work presented the transmission electron microscopy (TEM) investigation of the microstructures of the REBCO coated conductor to understand its delamination property. We found that the low delamination strength is associated with nano-voids formed at the IBAD MgO/Y2O3 interface. Delamination strength of REBCO is very important for its applications in large magnet projects. This work presented the transmission electron microscopy (TEM) investigation of the microstructures of the REBCO coated conductor to understand its delamination property. We found that the low delamination strength is associated with nano-voids formed at the IBAD MgO/Y2O3 interface. △ Less

Submitted 15 October, 2024; originally announced October 2024.

Comments: ASC2024 conference, Sept. 2-6, 2024, Salt Lake City, UT

Residual resistance ratio of Cu stabilizer in commercial REBCO tapes

Authors: Jun Lu, Yan Xin, Vince Toplosky, Jeremy Levitan, Ke Han, Jane Wadhams, Munir Humayun, Dmytro Abraimov, Hongyu Bai

Abstract: Residual resistance ratio (RRR) of Cu stabilizer in REBCO coated conductor is an important design parameter for REBCO magnets. In this work, we measured RRR of electroplated Cu stabilizer in commercial REBCO tapes. Over 130 samples were measured for the quality assurance programs of REBCO magnet projects at the National High Magnetic Field Laboratory, USA (NHMFL). The average RRR value was above 5… ▽ More Residual resistance ratio (RRR) of Cu stabilizer in REBCO coated conductor is an important design parameter for REBCO magnets. In this work, we measured RRR of electroplated Cu stabilizer in commercial REBCO tapes. Over 130 samples were measured for the quality assurance programs of REBCO magnet projects at the National High Magnetic Field Laboratory, USA (NHMFL). The average RRR value was above 50. In order to investigate the factors that influence RRR, several samples were analyzed by using scanning electron microscopy, secondary ion mass spectroscopy, and inductively coupled plasma mass spectroscopy. We found that, in our samples, RRR was strongly correlated with the grain size. We demonstrated that RRR was primarily determined by grain boundary resistivity. Lower RRR was also strongly correlated with higher concentration of chlorine impurity. This is explained by that higher chlorine impurity hindered the grain growth in the room temperature self annealing process resulting smaller grain. Smaller grain resulted in lower RRR. In addition, thermal annealing significantly enhanced RRR. An activation energy of 0.4 eV was obtained from the annealing experiment which corresponds to the activation of Cu grain growth. △ Less

Submitted 13 October, 2024; originally announced October 2024.

Comments: 18 pages

Journal ref: Cryogenics 141 (2024) 103901

Moiré exciton polaron engineering via twisted hBN

Authors: Minhyun Cho, Biswajit Datta, Kwanghee Han, Saroj B. Chand, Pratap Chandra Adak, Sichao Yu, Fengping Li, Kenji Watanabe, Takashi Taniguchi, James Hone, Jeil Jung, Gabriele Grosso, Young Duck Kim, Vinod M. Menon

Abstract: Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other 2D materials placed in its proximity. Here we demonstrate the remote imprinting of moiré patterns from twisted hexagonal boron… ▽ More Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other 2D materials placed in its proximity. Here we demonstrate the remote imprinting of moiré patterns from twisted hexagonal boron nitride (thBN) onto monolayer MoSe2 and investigate the resulting changes in the exciton properties. We confirm the imprinting of moiré patterns on monolayer MoSe2 via proximity using Kelvin probe force microscopy (KPFM) and hyperspectral photoluminescence (PL) mapping. By developing a technique to create large ferroelectric domain sizes ranging from 1 μm to 8.7 μm, we achieve unprecedented potential modulation of 387 +- 52 meV. We observe the formation of exciton polarons due to charge redistribution caused by the antiferroelectric moiré domains and investigate the optical property changes induced by the moiré pattern in monolayer MoSe2 by varying the moiré pattern size down to 110 nm. Our findings highlight the potential of twisted hBN as a platform for controlling the optical and electronic properties of 2D materials for optoelectronic and valleytronic applications. △ Less

Submitted 11 September, 2024; originally announced September 2024.

Local Manipulation of Skyrmion Lattice in Fe3GaTe2 at Room Temperature

Authors: Shuaizhao Jin, Zhan Wang, Shouzhe Dong, Yiting Wang, Kun Han, Guangcheng Wang, Zunyi Deng, Xingan Jiang, Ying Zhang, Houbing Huang, Jiawang Hong, Xiaolei Wang, Tianlong Xia, Sang-Wook Cheong, Xueyun Wang

Abstract: Motivated by advances in spintronic devices, an extensive exploration is underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of intri… ▽ More Motivated by advances in spintronic devices, an extensive exploration is underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of intrinsic skyrmion state in van der Waals ferromagnet Fe3GaTe2. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe3GaTe2 flake. The ordering of skyrmion state is further analyzed. Our result suggest Fe3GaTe2 emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices. △ Less

Submitted 22 February, 2024; originally announced February 2024.

Small polarons mediated near-room-temperature metal-insulator transition in vanadium dioxide and their hopping dynamics

Authors: Xiongfang Liu, Tong Yang, Shanquan Chen, Jing Wu, Chi Sin Tang, Yuanjie Ning, Zuhuang Chen, Liang Dai, Mengxia Sun, Mingyao Chen, Kun Han, Difan Zhou, Shengwei Zeng, Shuo Sun, Sensen Li, Ming Yang, Mark B. H. Breese, Chuanbing Cai, Thirumalai Venkatesan, Andrew T. S. Wee, Xinmao Yin

Abstract: Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellips… ▽ More Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We illustrate the complementary role of polaron dynamics in facilitating Peierls and Mott transitions, thereby contributing to the MIT processes. Furthermore, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film offer valuable insights into their electron structures. This investigation enhances comprehension of the MIT mechanism in correlated systems and underscores the roles of polarons, lattice distortions, and electron correlations in facilitating phase transition processes in strongly-correlated systems. Additionally, the detailed detection of small polarons and plasmons serves as inspiration for the development of new device functionalities. △ Less

Submitted 22 January, 2025; v1 submitted 28 December, 2023; originally announced December 2023.

Comments: Research article

Journal ref: Applied Physics Reviews. 12, 011403 (2025)

Multifunctional magnetic oxide-MoS$_2$ heterostructures on silicon

Authors: Allen Jian Yang, Liang Wu, Yanran Liu, Xinyu Zhang, Kun Han, Ying Huang, Shengyao Li, Xian Jun Loh, Qiang Zhu, Rui Su, Ce-Wen Nan, X. Renshaw Wang

Abstract: Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO), a correlated manganite perovskite, and MoS$_2$ are demonstrated on Si substrates wi… ▽ More Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO), a correlated manganite perovskite, and MoS$_2$ are demonstrated on Si substrates with multiple functions. To overcome the problems due to the incompatible growth process, technologies involving freestanding LSMO membranes and van der Waals force-mediated transfer are used to fabricate the LSMO-MoS$_2$ heterostructures. The LSMO-MoS$_2$ heterostructures exhibit a gate-tunable rectifying behavior, based on which metal-semiconductor field-effect transistors (MESFETs) with on-off ratios of over 104 can be achieved. The LSMO-MoS$_2$ heterostructures can function as photodiodes displaying considerable open-circuit voltages and photocurrents. In addition, the colossal magnetoresistance of LSMO endows the LSMO-MoS$_2$ heterostructures with an electrically tunable magnetoresponse at room temperature. This work not only proves the applicability of the LSMO-MoS$_2$ heterostructure devices on Si-based platform but also demonstrates a paradigm to create multifunctional heterostructures from materials with disparate properties. △ Less

Submitted 11 October, 2023; originally announced October 2023.

Journal ref: Advanced Materials 35, 2302620 (2023)

Competition of electronic correlation and reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures

Authors: Xueyan Wang, Lin Sun, Chen Ye, Zhen Huang, Kun Han, Ke Huang, Allen Jian Yang, Shengwei Zeng, Xian Jun Loh, Qiang Zhu, T. Venkatesan, Ariando Ariando, X. Renshaw Wang

Abstract: Electronic correlation and reconstruction are two important factors that play a critical role in shaping the magnetic and electronic properties of correlated low-dimensional systems. Here, we report a competition between the electronic correlation and structural reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures by modulating material polarity and interfacial strain, respectively. The heterost… ▽ More Electronic correlation and reconstruction are two important factors that play a critical role in shaping the magnetic and electronic properties of correlated low-dimensional systems. Here, we report a competition between the electronic correlation and structural reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures by modulating material polarity and interfacial strain, respectively. The heterostructures exhibit a critical thickness (tc) at which a metal-to-insulator transition (MIT) abruptly occurs at certain thickness, accompanied by the coexistence of two- and three-dimensional (2D and 3D) carriers. Intriguingly, the tc exhibits a V-shaped dependence on the doping concentration of Sr, with the smallest tc value at x = 0.5. We attribute this V-shaped dependence to the competition between the electronic reconstruction (modulated by the polarity) and the electronic correlation (modulated by strain), which are borne out by the experimental results, including strain-dependent electronic properties and the evolution of 2D and 3D carriers. Our findings underscore the significance of the interplay between electronic reconstruction and correlation in the realization and utilization of emergent electronic functionalities in low-dimensional correlated systems. △ Less

Submitted 6 October, 2023; originally announced October 2023.

Design and manipulation of high-performance photovoltaic systems based on two-dimensional novel KAgSe/KAgX(X=S,Te) van der Waals heterojunctions

Authors: Keying Han, Qiang Wang, Yan Liang, Defeng Guo, Bin Wang

Abstract: The realization of high-performance two-dimensional (2D) solar photovoltaic systems are both fundamentally intriguing and practically appealing to meet the fast-growing energy requirements. Since the limited application of single 2D crystals in photovoltaic, here we propose a family of 2D KAgSe/KAgX(X=S,Te) van der Waals heterostructures (vdWHs), which are constructed by combining two different KA… ▽ More The realization of high-performance two-dimensional (2D) solar photovoltaic systems are both fundamentally intriguing and practically appealing to meet the fast-growing energy requirements. Since the limited application of single 2D crystals in photovoltaic, here we propose a family of 2D KAgSe/KAgX(X=S,Te) van der Waals heterostructures (vdWHs), which are constructed by combining two different KAgX layers through interlayer vdW interaction. After a systematic study and further regulatory research of these vdWHs based on the first-principles, numerous fascinating characteristics and physical mechanisms are obtained. Firstly, favorable potential applications of these vdWHs in photovoltaics are confirmed in virtue of their desirable optoelectronic properties, such as the robust stabilitis, moderate direct band gaps, type-II band alignments together with superior carrier mobilities, visible optical absorptions, power conversion efficiencys (PCEs) and photocurrents in their based photovoltaic devices. More importantly, when under varying vertical electric field Ez, a phase transition of band alignment from type-II to type-I of these vdWHs can be induced by the opposite band shifts between layers, which may enrich their applications in light-emitting diodes and lasers. Meanwhile, the PCE can be expanded up to 23%, and an obvious red-shift peak of the photocurrent in the visible light range are also obtained at different Ez. These fascinating tunable properties of KAgSe/KAgX vdWHs under varying Ez not only promote the improvement of their photoelectric performances, but the underlying mechanisms can also be applied to next experimental design and practical application of other 2D photovoltaic systems. Especially for the red-shift peak of the photocurrent, which is rarely found but highly desirable in practical visible photoelectric conversion. △ Less

Submitted 28 June, 2023; originally announced June 2023.

Comments: 11 pages, 7figures

Tunable Magnetic Properties in Sr$_2$FeReO$_6$ Double-Perovskite

Authors: Z. T. Zhang, H. Yan, Z. Huang, X. Chi, C. J. Li, Z. S. Lim, S. W. Zeng, K. Han, G. J. Omar, K. X. Jin, A. Ariando

Abstract: Double-perovskite oxides have attracted recent attention due to their attractive functionalities and application potential. In this paper, we demonstrate the effect of dual controls, i.e., the deposition pressure of oxygen (P$_O2$) and lattice mismatch ($ε$), on tuning magnetic properties in epitaxial double-perovskite Sr$_2$FeReO$_6$ films. In a nearly-lattice-matched Sr$_2$FeReO$_6$/SrTiO$_3$ fi… ▽ More Double-perovskite oxides have attracted recent attention due to their attractive functionalities and application potential. In this paper, we demonstrate the effect of dual controls, i.e., the deposition pressure of oxygen (P$_O2$) and lattice mismatch ($ε$), on tuning magnetic properties in epitaxial double-perovskite Sr$_2$FeReO$_6$ films. In a nearly-lattice-matched Sr$_2$FeReO$_6$/SrTiO$_3$ film, the ferrimagnetic-to-paramagnetic phase transition occurs when P$_O2$ is reduced to 30 mTorr, probably due to the formation of Re$^{4+}$ ions that replace the stoichiometric Re$^{5+}$ to cause disorders of $B$-site ions. On the other hand, a large compressive strain or tensile strain shifts this critical P$_O2$ to below 1 mTorr or above 40 mTorr, respectively. The observations could be attributed to the modulation of $B$-site ordering by epitaxial strain through affecting elemental valence. Our results provide a feasible way to expand the functional tunability of magnetic double-perovskite oxides that hold great promise for spintronic devices. △ Less

Submitted 26 April, 2023; originally announced April 2023.

Comments: Main text 18 pages, 5 figures; Supplementary information 8 pages, 4 figures

Journal ref: Nano Letters 22, 9900 (2022)

CHGNet: Pretrained universal neural network potential for charge-informed atomistic modeling

Authors: Bowen Deng, Peichen Zhong, KyuJung Jun, Janosh Riebesell, Kevin Han, Christopher J. Bartel, Gerbrand Ceder

Abstract: The simulation of large-scale systems with complex electron interactions remains one of the greatest challenges for the atomistic modeling of materials. Although classical force fields often fail to describe the coupling between electronic states and ionic rearrangements, the more accurate \textit{ab-initio} molecular dynamics suffers from computational complexity that prevents long-time and large… ▽ More The simulation of large-scale systems with complex electron interactions remains one of the greatest challenges for the atomistic modeling of materials. Although classical force fields often fail to describe the coupling between electronic states and ionic rearrangements, the more accurate \textit{ab-initio} molecular dynamics suffers from computational complexity that prevents long-time and large-scale simulations, which are essential to study many technologically relevant phenomena, such as reactions, ion migrations, phase transformations, and degradation. In this work, we present the Crystal Hamiltonian Graph neural Network (CHGNet) as a novel machine-learning interatomic potential (MLIP), using a graph-neural-network-based force field to model a universal potential energy surface. CHGNet is pretrained on the energies, forces, stresses, and magnetic moments from the Materials Project Trajectory Dataset, which consists of over 10 years of density functional theory static and relaxation trajectories of $\sim 1.5$ million inorganic structures. The explicit inclusion of magnetic moments enables CHGNet to learn and accurately represent the orbital occupancy of electrons, enhancing its capability to describe both atomic and electronic degrees of freedom. We demonstrate several applications of CHGNet in solid-state materials, including charge-informed molecular dynamics in Li$_x$MnO$_2$, the finite temperature phase diagram for Li$_x$FePO$_4$ and Li diffusion in garnet conductors. We critically analyze the significance of including charge information for capturing appropriate chemistry, and we provide new insights into ionic systems with additional electronic degrees of freedom that can not be observed by previous MLIPs. △ Less

Submitted 20 June, 2023; v1 submitted 27 February, 2023; originally announced February 2023.

Exploring the magnetic properties of individual barcode nanowires using wide-field diamond microscopy

Authors: Jungbae Yoon, Jun Hwan Moon, Jugyeong Jeong, Yu Jin Kim, Kihwan Kim, Hee Seong Kang, Yoo Sang Jeon, Eunsoo Oh, Sun Hwa Lee, Kihoon Han, Dongmin Lee, Chul-Ho Lee, Young Keun Kim, Donghun Lee

Abstract: Barcode magnetic nanowires typically comprise a multilayer magnetic structure in a single body with more than one segment type. Interestingly, owing to selective functionalization and novel interactions between the layers, barcode magnetic nanowires have attracted significant attention, particularly in the field of bioengineering. However, an analysis of their magnetic properties at the individual… ▽ More Barcode magnetic nanowires typically comprise a multilayer magnetic structure in a single body with more than one segment type. Interestingly, owing to selective functionalization and novel interactions between the layers, barcode magnetic nanowires have attracted significant attention, particularly in the field of bioengineering. However, an analysis of their magnetic properties at the individual nanowire level remains challenging. With this background, herein, we investigated the characterization of magnetic nanowires at room temperature under ambient conditions based on magnetic images obtained via wide-field quantum microscopy with nitrogen-vacancy centers in diamond. Consequently, we could extract critical magnetic properties, such as the saturation magnetization and coercivity, of single nanowires by comparing the experimental results with those of micromagnetic simulations. This study opens up the possibility for a versatile characterization method suited to individual magnetic nanowires. △ Less

Submitted 21 February, 2023; originally announced February 2023.

Comments: main text (20 pages, 5 figures), supplementary materials (9 pages, 8 figures)

MICROSTRUCTURE OF Glidcop AL-60

Authors: Yan Xin, Jun Lu, Ke Han

Abstract: Glidcop is an oxide-particle-dispersion strengthened copper composite that has a combination of high mechanical strength and high electrical conductivity. It has been used as a conductor for 100 T ultrahigh field pulsed magnets by the National High Magnetic Field Laboratory, USA. In the quest for even higher field pulsed magnets, material development is crucial. Since the mechanical properties of… ▽ More Glidcop is an oxide-particle-dispersion strengthened copper composite that has a combination of high mechanical strength and high electrical conductivity. It has been used as a conductor for 100 T ultrahigh field pulsed magnets by the National High Magnetic Field Laboratory, USA. In the quest for even higher field pulsed magnets, material development is crucial. Since the mechanical properties of a material are often determined by its micro-structure, full characterization of the microstructure of Glidcop is necessary. In this work, we studied the microstructure of Glidcop AL-60 using both transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). We identified both alpha-Al2O3 and cubic eta-Al2O3 nanoparticles in AL-60 and investigated their size and density distribution. The small alumina particles eta-Al2O3 nanoparticles with typical size of 5 to 30 nm are of triangular shape. They have had well defined crystal orientation relation-ship with the Cu matrix. We observed dislocations pinned by the alumina nanoparticles in cold-drawn wires. We believed that dislocation bypassing alumina particles via Orowan looping was the main strengthening mechanism. We observed microcracks near large particles, demonstrating the detrimental effect of large particles in AL-60. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 4 pages, 5 figures

Journal ref: IEEE transactions on Applied Superconductivity, 2022

Critical Current Longitudinal and Transverse Strain Sensitivities of High JC Nb3Sn Conductors

Authors: Jun Lu, Ke Han, Robert P. Walsh, Todd Atkins, Scott T. Bole

Abstract: Characterizing critical current IC of Nb3Sn strands as function of a strain is very important for large high field superconducting magnet applications such as the superconducting outsert coil of the series-connected hybrid at the NHMFL and the ITER magnets. Apparatuses for measuring IC versus longitudinal strain and transverse stress have been developed and used at the NHMFL. We have characterized… ▽ More Characterizing critical current IC of Nb3Sn strands as function of a strain is very important for large high field superconducting magnet applications such as the superconducting outsert coil of the series-connected hybrid at the NHMFL and the ITER magnets. Apparatuses for measuring IC versus longitudinal strain and transverse stress have been developed and used at the NHMFL. We have characterized the IC strain sensitivities of a few candidate strands for the series-connected-hybrid. In addition, IC irreversibility strains are measured for the recently developed ITER high JC strands. The different strain sensitivities for different strands are discussed. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 4 pages, 6 figures

Journal ref: IEEE Transactions on Applied Superconductivity, 2008

Nondestructive testing of high strength conductors for high field pulsed magnets

Authors: Jun Lu, Todd Adkins, Iain Dixon, Doan Nguyen, Ke Han

Abstract: High field pulsed magnets at the NHMFL use high strength conductor wires up to 90% of their ultimate tensile strength. Therefore it is very important to ensure that the wires are free of flaws. It is known that in the conductors cold drawing process, internal chevron crack could occur due to unsuitable drawing die schedule or inadequate lubrication. These internal cracks occurs infrequently along… ▽ More High field pulsed magnets at the NHMFL use high strength conductor wires up to 90% of their ultimate tensile strength. Therefore it is very important to ensure that the wires are free of flaws. It is known that in the conductors cold drawing process, internal chevron crack could occur due to unsuitable drawing die schedule or inadequate lubrication. These internal cracks occurs infrequently along the wire, so tensile tests of short samples cut from the ends of a long length conductor often miss the problem. In addition, small inclusions on the wire surface can compromise wires fatigue properties. In this paper, we present results of our non-destructive testing (NDT) inspection of Glidcop AL60 wires using eddy current testing (ECT), ultrasonic testing (UT) and x-ray radiography (2D and 3D). Chevron cracks were found in some AL60 conductors by all three NDT techniques. Surface inclusions were found by ECT. We have developed a long length ECT wire inspection capability. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 4 pages, 9 figures

A Novel Non-Volatile Inverter-based CiM: Continuous Sign Weight Transition and Low Power on-Chip Training

Authors: Dong Zhang, Yuye Kang, Gan Liu, Zuopu Zhou, Kaizhen Han, Chen Sun, Leming Jiao, Xiaolin Wang, Yue Chen, Qiwen Kong, Zijie Zheng, Long Liu, Xiao Gong

Abstract: In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroelectricity, a non-volatile inverter is successfully demonstrated, enabling desired continuous weight transition between negative and positive via the programmable threshold voltage (VTH) of ferroelectric field-effect tran… ▽ More In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroelectricity, a non-volatile inverter is successfully demonstrated, enabling desired continuous weight transition between negative and positive via the programmable threshold voltage (VTH) of ferroelectric field-effect transistors (FeFETs). Compared with commonly used designs with the similar function, 1T1I uniquely achieves pure on-chip-based weight transition at an optimized working current without relying on assistance from off-chip calculation units for signed-weight comparison, facilitating high-speed training at low power consumption. Further improvements in linearity and training speed can be obtained via a two-transistor-one-inverter (2T1I) design. Overall, focusing on energy and time efficiencies, this work provides a valuable design strategy for future FeFET-based computing-in-memory (CiM). △ Less

Submitted 19 September, 2022; originally announced September 2022.

First-principles study of oxygen vacancy defects in orthorhombic Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack

Authors: Junshuai Chai, Hao Xu, Jinjuan Xiang, Yuanyuan Zhang, Shujing Zhao, Fengbin Tian, Jiahui Duan, Kai Han, Xiaolei Wang, Jun Luo, Wenwu Wang, Tianchun Ye

Abstract: The gate defect of the ferroelectric HfO$_2$-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an effective method for the atomic-scale understanding of gate defects. However, the first-principles study on the defects of FeFET gate stacks, i.e., metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si structure, has not… ▽ More The gate defect of the ferroelectric HfO$_2$-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an effective method for the atomic-scale understanding of gate defects. However, the first-principles study on the defects of FeFET gate stacks, i.e., metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si structure, has not been reported so far. The key challenge is the construction of metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack models. Here, we use the Hf$_{0.5}$Zr$_{0.5}$O$_2$(130) high-index crystal face as the orthorhombic ferroelectric layer and construct a robust atomic structure of the orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack without any gap states. Its high structural stability is ascribed to the insulated interface. The calculated band offsets show that this gate structure is of the type-I band alignment. Furthermore, the formation energies and charge transition levels (CTLs) of defects reveal that the oxygen vacancy defects are more favorable to form compared with other defects such as oxygen interstitial and Hf/Zr vacancy, and their CTLs are mainly localized near the Si conduction band minimum and valence band maximum, in agreement with the reported experimental results. The oxygen vacancy defects are responsible for charge trapping/de-trapping behavior in Si FeFET. This work provides an insight into gate defects and paves the way to carry out the first-principles study of ferroelectric HfO$_2$-based Si FeFET. △ Less

Submitted 20 June, 2022; v1 submitted 28 April, 2022; originally announced April 2022.

Comments: 18 pages, 5 figures

Critical behavior in the Mn$_{5}$Ge$_{3}$ ferromagnet

Authors: Jun-Fa Lin, Huan Wang, Sheng Xu, Xiao-Yan Wang, Xiang-Yu Zeng, Zheng-Yi Dai, Jing Gong, Kun Han, Yi-Ting Wang, Xiao-Ping Ma, Tian-Long Xia

Abstract: High-Curie-temperature ferromagnets are promising candidates for designing new spintronic devices. Here we have successfully synthesized a single-crystal sample of the itinerant ferromagnet Mn$ _{5}$Ge$_{3}$ used flux method and its critical properties were investigated by means of bulk dc-magnetization at the boundary between the ferromagnetic (FM) and paramagnetic (PM) phase. Critical exponents… ▽ More High-Curie-temperature ferromagnets are promising candidates for designing new spintronic devices. Here we have successfully synthesized a single-crystal sample of the itinerant ferromagnet Mn$ _{5}$Ge$_{3}$ used flux method and its critical properties were investigated by means of bulk dc-magnetization at the boundary between the ferromagnetic (FM) and paramagnetic (PM) phase. Critical exponents $ β=0.336 \pm 0.001 $ with a critical temperature $ T_{c}=300.29 \pm 0.01 $ K and $ γ=1.193 \pm 0.003 $ with $ T_{c} = 300.15 \pm 0.05 $ K are obtained by the modified Arrott plot, whereas $ δ= 4.61 \pm 0.03 $ is deduced by a critical isotherm analysis at $ T_{c} = 300 $ K. The self-consistency and reliability of these critical exponents are verified by the Widom scaling law and the scaling equations. Further analysis reveals that the spin coupling in Mn$ _{5}$Ge$_{3}$ exhibits three-dimensional Ising-like behavior. The magnetic exchange is found to decay as $ J(r)\approx r^{-4.855} $ and the spin interactions are extended beyond the nearest neighbors, which may be related to different set of Mn--Mn interactions with unequal magnitude of exchange strengths. Additionally, the existence of noncollinear spin configurations in Mn$ _{5} $Ge$ _{3} $ results in a small deviation of obtained critical exponents from those for standard 3D-Ising model. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Comments: 8 pages, 6 figures. arXiv admin note: substantial text overlap with arXiv:1803.05905 by other authors

Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa

Authors: Xiang-Yu Zeng, Zheng-Yi Dai, Sheng Xu, Ning-Ning Zhao, Huan Wang, Xiao-Yan Wang, Jun-Fa Lin, Jing Gong, Xiao-Ping Ma, Kun Han, Yi-Ting Wang, Peng Cheng, Kai Liu, Tian-Long Xia

Abstract: We perform a detailed analysis of the magnetotransport and de Haas-van Alphen (dHvA) oscillations in crystal PdGa which is predicted to be a typical chiral Fermion semimetal from CoSi family holding a large Chern number. The unsaturated quadratic magnetoresistance (MR) and nonlinear Hall resistivity indicate that PdGa is a multi-band system without electron-hole compensation. Angle-dependent resis… ▽ More We perform a detailed analysis of the magnetotransport and de Haas-van Alphen (dHvA) oscillations in crystal PdGa which is predicted to be a typical chiral Fermion semimetal from CoSi family holding a large Chern number. The unsaturated quadratic magnetoresistance (MR) and nonlinear Hall resistivity indicate that PdGa is a multi-band system without electron-hole compensation. Angle-dependent resistivity in PdGa shows weak anisotropy with twofold or threefold symmetry when the magnetic field rotates within the (1$\bar{1}$0) or (111) plane perpendicular to the current. Nine or three frequencies are extracted after the fast Fourier-transform analysis (FFT) of the dHvA oscillations with B//[001] or B//[011], respectively, which is confirmed to be consistent with the Fermi surfaces (FSs) obtained from first-principles calculations with spin-orbit coupling (SOC) considered. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 106, 205120 (2022)

Large anomalous Hall effect in layered antiferromagnet Co$_{0.29}$TaS$_2$

Authors: Huan Wang, Jun-Fa Lin, Xiang-Yu Zeng, Xiao-Ping Ma, Jing Gong, Zheng-Yi Dai, Xiao-Yan Wang, Kun Han, Yi-Ting Wang, Tian-Long Xia

Abstract: We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co$_{0.29}$TaS$_{2}$. Of particular interests in Co$_{0.29}$TaS$_{2}$ are abundant magnetic transitions, which show that the magnetic structures are tuned by temperature or magnetic field. With decreasing temperature, Co$_{0.29}$TaS$_{2}$ undergoes two transitions at T… ▽ More We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co$_{0.29}$TaS$_{2}$. Of particular interests in Co$_{0.29}$TaS$_{2}$ are abundant magnetic transitions, which show that the magnetic structures are tuned by temperature or magnetic field. With decreasing temperature, Co$_{0.29}$TaS$_{2}$ undergoes two transitions at T$_{t1}\sim$ 38.3 K and T$_{t2}\sim$ 24.3 K. Once the magnetic field is applied, another transition T$_{t3}\sim$ 34.3 K appears between 0.3 T and 5 T. At 2 K, an obvious ferromagnetic hysteresis loop within H$_{t1}\sim\pm$ 6.9 T is observed, which decreases with increasing temperature and eventually disappears at T$_{t2}$. Besides, Co$_{0.29}$TaS$_{2}$ displays step-like behavior as another magnetic transition around H$_{t2}\sim\pm$ 4 T, which exists until $\sim$ T$_{t1}$. These characteristic temperatures and magnetic fields mark complex magnetic phase transitions in Co$_{0.29}$TaS$_{2}$, which are also evidenced in transport results. Large AHE dominates in the Hall resistivity with the conspicuous value of R$_{s}$/R$_{0}\sim 10^{5}$, considering that the tiny net magnetization (0.0094$μ_{B}$/Co) alone would not lead to this value, thus the contribution of Berry curvature is necessary. The longitudinal resistivity illustrates a prominent irreversible behavior within H$_{t1}$. The abrupt change at H$_{t2}$ below T$_{t1}$, corresponding to the step-like magnetic transitions, is also observed. Synergy between the magnetism and topological properties, both playing a crucial role, may be the key factor of large AHE in antiferromagnet, which also offers a new perspective in magnetic topological materials with the platform of Co$_{0.29}$TaS$_{2}$. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Comments: 5 pages,4 figures

Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors

Authors: Chen Sun, Chao Li, Subhranu Samanta, Kaizhen Han, Zijie Zheng, Jishen Zhang, Qiwen Kong, Haiwen Xu, Zuopu Zhou, Yue Chen, Cheng Zhuo, Kai Ni, Xunzhao Yin, Xiao Gong

Abstract: 3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these drawbacks by introducing an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which has the advantages of ultra-low OFF current, back-end-of-line compatibility,… ▽ More 3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these drawbacks by introducing an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which has the advantages of ultra-low OFF current, back-end-of-line compatibility, higher mobility and better uniformity than poly-Si, and free of grain boundaries due to the amorphous nature. Ultra-scaled floating-gate (FG) transistors with a channel length of 60 nm are reported, achieving the highest ON current of 127 uA/um among all reported a-IGZO-based flash devices for high-density, low-power, and high-performance 3D NAND applications. Furthermore, a non-volatile and area-efficient ternary content-addressable memory (TCAM) with only two a-IGZO FG transistors is experimentally demonstrated. Array-level simulations using experimentally calibrated models show that this design achieves at least 240x array-size scalability and 2.7-fold reduction in search energy than 16T-CMOS, 2T2R, and 2FeFET TCAMs. △ Less

Submitted 15 December, 2022; v1 submitted 15 December, 2021; originally announced December 2021.

Comments: 50 pages, 20 figures

Journal ref: Advanced Electronic Materials, vol. 8, no. 12, p. 2200643, 2022

Reversible modulation of metal-insulator transition in VO2 via chemically-induced oxygen migration

Authors: Kun Han, Hanyu Wang, Liang Wu, Yu Cao, Dong-Chen Qi, Changjian Li, Zhen Huang, Xiao Li, X. Renshaw Wang

Abstract: Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the dramatic change in resistivity. Here, we demonstrate a reversible control of MIT in VO2 films via oxygen stoichiometry engineering. By facilely depositing and diss… ▽ More Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the dramatic change in resistivity. Here, we demonstrate a reversible control of MIT in VO2 films via oxygen stoichiometry engineering. By facilely depositing and dissolving a water-soluble yet oxygen-active Sr3Al2O6 capping layer atop the VO2 at room temperature, oxygen ions can reversibly migrate between VO2 and Sr3Al2O6, resulting in a gradual suppression and a complete recovery of MIT in VO2. The migration of the oxygen ions is evidenced in a combination of transport measurement, structural characterization and first-principles calculations. This approach of chemically-induced oxygen migration using a water-dissolvable adjacent layer could be useful for advanced electronic and iontronic devices and studying oxygen stoichiometry effects on the MIT. △ Less

Submitted 11 September, 2021; originally announced September 2021.

Comments: 16 pages, 4 figures

Enhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

Authors: Kun Han, Liang Wu, Yu Cao, Hanyu Wang, Chen Ye, Ke Huang, M. Motapothula, Hongna Xing, Xinghua Li, Dong-Chen Qi, Xiao Li, X. Renshaw Wang

Abstract: Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) provides huge potential in future flexible electronic applications as well as a unique aspect of the study of lattice-electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding for… ▽ More Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) provides huge potential in future flexible electronic applications as well as a unique aspect of the study of lattice-electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding form. Here, we report an enhanced MIT in VO2-based freestanding membranes, with a lateral size up to millimetres and VO2 thickness down to 5 nm. The VO2-membranes were detached by dissolving a Sr3Al2O6 sacrificial layer between the VO2 thin film and c-Al2O3(0001) substrate, allowing a transfer onto arbitrary surfaces. Furthermore, the MIT in the VO2-membrane was greatly enhanced by inserting an intermediate Al2O3 buffer layer. In comparison to the best available ultrathin VO2-membranes, the enhancement of MIT is over 400% at 5 nm VO2 thickness and more than one order of magnitude for VO2 above 10 nm. Our study widens the spectrum of functionality in ultrathin and large-scale membranes, and enables the potential integration of MIT into flexible electronics and photonics. △ Less

Submitted 30 April, 2021; originally announced May 2021.

Observation of perfect diamagnetism and interfacial effect on the electronic structures in Nd0.8Sr0.2NiO2 superconducting infinite layers

Authors: S. W. Zeng, X. M. Yin, C. J. Li, L. E. Chow, C. S. Tang, K. Han, Z. Huang, Y. Cao, D. Y. Wan, Z. T. Zhang, Z. S. Lim, C. Z. Diao, P. Yang, A. T. S. Wee, S. J. Pennycook, A. Ariando

Abstract: Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, materi… ▽ More Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, material synthesis remains challenging, direct demonstration of perfect diamagnetism is still missing, and understanding of the role of the interface and bulk to the superconducting properties is still lacking. Here, we show high-quality Nd0.8Sr0.2NiO2 thin films with different thicknesses and demonstrate the interface and strain effects on the electrical, magnetic and optical properties. Perfect diamagnetism is achieved, confirming the occurrence of superconductivity in the films. Unlike the thick films in which the normal-state Hall-coefficient changes signs as the temperature decreases, the Hall-coefficient of films thinner than 5.5 nm remains negative, suggesting a thickness-driven band structure modification. Moreover, X-ray absorption spectroscopy reveals the Ni-O hybridization nature in doped infinite-layer nickelates, and the hybridization is enhanced as the thickness decreases. Consistent with band structure calculations on the nickelate/SrTiO3 heterostructure, the interface and strain effect induce a dominating electron-like band in the ultrathin film, thus causing the sign-change of the Hall-coefficient. △ Less

Submitted 13 February, 2022; v1 submitted 29 April, 2021; originally announced April 2021.

Comments: 24 pages, 3 main figures, 6 supplementary figures

Journal ref: Nature Communications 13, 743 (2022)

Room-temperature colossal magnetoresistance in terraced single-layer graphene

Authors: J. X. Hu, J. Gou, M. Yang, G. J. Omar, J. Y. Tan, S. W. Zeng, Y. P. Liu, K. Han, Z. S. Lim, Z. Huang, A. T. S. Wee, A. Ariando

Abstract: Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor ba… ▽ More Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single-layer regime. Here, we report a room-temperature colossal MR of up to 5,000% at 9 T in terraced single-layer graphene. By laminating single-layer graphene on a terraced substrate, such as TiO2 terminated SrTiO3, we demonstrate a universal one order of magnitude enhancement in the MR compared to conventional single-layer graphene devices. Strikingly, a colossal MR of >1,000% was also achieved in the terraced graphene even at a high carrier density of ~1012 cm-2. Systematic studies of the MR of single-layer graphene on various oxide- and non-oxide-based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. Our results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate. △ Less

Submitted 19 January, 2021; originally announced January 2021.

Comments: 64 pages; Main 31 pages, 4 figures; Supplementary 33 pages, 18 figures

Journal ref: Advanced Materials 32, 2002201 (2020)

Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

Authors: W. X. Zhou, H. J. Wu, J. Zhou, S. W. Zeng, C. J. Li, M. S. Li, R. Guo, J. X. Xiao, Z. Huang, W. M. Lv, K. Han, P. Yang, C. G. Li, Z. S. Lim, H. Wang, Y. Zhang, S. J. Chua, K. Y. Zeng, T. Venkatesan, J. S. Chen, Y. P. Feng, S. J. Pennycook, A. Ariando

Abstract: Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$T… ▽ More Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics. △ Less

Submitted 11 July, 2020; originally announced July 2020.

Comments: Main text: 25 pages, 4 figures Supplementary note: 19 pages, 11 figures

Journal ref: Commun. Phys. 2, 125 (2019)

Phase diagram and superconducting dome of infinite-layer $\mathrm{Nd_{1-x}Sr_{x}NiO_{2}}$ thin films

Authors: Shengwei Zeng, Chi Sin Tang, Xinmao Yin, Changjian Li, Mengsha Li, Zhen Huang, Junxiong Hu, Wei Liu, Ganesh Ji Omar, Hariom Jani, Zhi Shiuh Lim, Kun Han, Dongyang Wan, Ping Yang, Stephen John Pennycook, Andrew T. S. Wee, Ariando Ariando

Abstract: Infinite-layer Nd1-xSrxNiO2 thin films with Sr doping level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the n… ▽ More Infinite-layer Nd1-xSrxNiO2 thin films with Sr doping level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the normal state Hall coefficient ($R_{H}$) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes monotonically decreases with decreasing x from the overdoped side and approaches the superconducting dome at the mid-point, suggesting a reconstruction of the Fermi surface as the dopant concentration changes across the center of the dome. △ Less

Submitted 2 October, 2020; v1 submitted 23 April, 2020; originally announced April 2020.

Comments: 23 pages (including Supplemental Material), 12 Figures (including 8 supplemental figures)

Journal ref: Phys. Rev. Lett. 125, 147003 (2020)

Tailoring magnetic order via atomically stacking 3d/5d electrons

Authors: Ke Huang, Liang Wu, Maoyu Wang, Nyayabanta Swain, M. Motapothula, Yongzheng Luo, Kun Han, Mingfeng Chen, Chen Ye, Allen Jian Yang, Huan Xu, Dong-chen Qi, Alpha T. N'Diaye, Christos Panagopoulos, Daniel Primetzhofer, Lei Shen, Pinaki Sengupta, Jing Ma, Zhenxing Feng, Ce-Wen Nan, X. Renshaw Wang

Abstract: The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar… ▽ More The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, contributing to future applications. △ Less

Submitted 14 September, 2021; v1 submitted 16 January, 2020; originally announced January 2020.

Journal ref: Applied Physics Reviews 7, 011401 (2020)

Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime

Authors: Su Kong Chong, Kyu Bum Han, Taylor D. Sparks, Vikram V. Deshpande

Abstract: The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling betwe… ▽ More The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe2 and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe non-linear QH transitions at low charge density in strongly-coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N= 0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates inter-surface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport and capacitance measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation. △ Less

Submitted 5 January, 2020; v1 submitted 22 July, 2019; originally announced July 2019.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. Lett. 123, 036804 (2019)

Aperiodic quantum oscillations in the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

Authors: Km Rubi, Julien Gosteau, Raphaël Serra, Kun Han, Shengwei Zeng, Zhen Huang, Etienne Snoeck, Rémi Arras, Benedicte Warot-Fonrose, Ariando, Michel Goiran, Walter Escoffier

Abstract: Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of a high-mobility quasi-two-dimensional electron gas at this interface under high magnetic field (55 T) and provide new insights for electronic band structure by… ▽ More Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of a high-mobility quasi-two-dimensional electron gas at this interface under high magnetic field (55 T) and provide new insights for electronic band structure by analyzing the Shubnikov-de Haas oscillations. Interestingly, the quantum oscillations are not 1/B-periodic and produce a highly non-linear Landau plot (Landau level index versus 1/B). Among possible scenarios, the Roth-Gao-Niu equation provides a natural explanation for 1/B-aperiodic oscillations in relation with the magnetic response functions of the system. Overall, the magneto-transport data are discussed in light of high-resolution scanning transmission electron microscopy analysis of the interface as well as calculations from density functional theory. △ Less

Submitted 7 March, 2019; originally announced March 2019.

Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces

Authors: S. W. Zeng, X. M. Yin, T. S. Herng, K. Han, Z. Huang, L. C. Zhang, C. J. Li, W. X. Zhou, D. Y. Wan, P. Yang, J. Ding, A. T. S. Wee, J. M. D. Coey, T. Venkatesan, A. Rusydi, A. Ariando

Abstract: Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and La… ▽ More Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Comments: 5 figures; Supplementary materials included at the end of the main text

Journal ref: Physical Review Letters, October 05, 2018

Topological Insulator-Based van der Waals Heterostructures for Effective Control of Massless and Massive Dirac Fermions

Authors: Su Kong Chong, Kyu Bum Han, Akira Nagaoka, Ryuichi Tsuchikawa, Renlong Liu, Haoliang Liu, Z. Valy Vardeny, Dmytro A. Pesin, Changgu Lee, Taylor D. Sparks, Vikram V. Deshpande

Abstract: Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface… ▽ More Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface states (TSS). However, to realize more advanced devices and phenomena, there is a need for a platform to tune the TSS or modify them e.g. gap them by proximity with magnetic insulators, in a clean manner. Here we introduce van der Waals (vdW) heterostructures in the form of topological insulator/insulator/graphite to effectively control chemical potential of the TSS. Two types of gate dielectrics, normal insulator hexagonal boron nitride (hBN) and ferromagnetic insulator Cr2Ge2Te6 (CGT) are utilized to tune charge density of TSS in the quaternary TI BiSbTeSe2. hBN/graphite gating in the QH regime shows improved quantization of TSS by suppression of magnetoconductivity of massless Dirac fermions. CGT/graphite gating of massive Dirac fermions in the QH regime yields half-quantized Hall conductance steps and a measure of the Dirac gap. Our work shows the promise of the vdW platform in creating advanced high-quality TI-based devices. △ Less

Submitted 23 May, 2018; originally announced May 2018.

Comments: 19 pages, 4 figures

Enhancement in surface mobility and quantum transport of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) topological insulator by controlling the crystal growth conditions

Authors: Kyu-Bum Han, Su Kong Chong, Akira Nagaoka, Suzanne Petryk, Michael A. Scarpulla, Vikram V. Deshpande, Taylor D. Sparks

Abstract: Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth… ▽ More Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field. △ Less

Submitted 23 May, 2018; originally announced May 2018.

Comments: 22 pages, 6 figures, 1 table

Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$

Authors: V. V. Bal, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: The two dimensional conducting interfaces in SrTiO$_3$-based systems are known to show a variety of coexisting and competing phenomena in a complex phase space. Magnetoresistance measurements, which are typically used to extract information about the various interactions in these systems, must be interpreted with care, since multiple interactions can contribute to the resistivity in a given range… ▽ More The two dimensional conducting interfaces in SrTiO$_3$-based systems are known to show a variety of coexisting and competing phenomena in a complex phase space. Magnetoresistance measurements, which are typically used to extract information about the various interactions in these systems, must be interpreted with care, since multiple interactions can contribute to the resistivity in a given range of magnetic field and temperature. Here we review all the phenomena that can contribute to transport in SrTiO$_3$-based conducting interfaces at low temperatures, and discuss possible ways to distinguish between various phenomena. We apply this analysis to the magnetoresistance data of (111) oriented (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/STO (LSAT/STO) heterostructures in perpendicular field, and find an excess negative magnetoresistance contribution which cannot be explained by weak localization alone. We argue that contributions from magnetic scattering as well as electron-electron interactions can provide a possible explanation for the observed magnetoresistance. △ Less

Submitted 1 March, 2018; originally announced March 2018.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. B 99, 035408 (2019)

Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$

Authors: V. V. Bal, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: Strong correlations, multiple lattice degrees of freedom, and the ease of doping make complex oxides a source of great research interest. Complex oxide heterointerfaces break inversion symmetry and can host a two dimensional carrier gas, which can display a variety of coexisting and competing phenomena. In the case of heterointerfaces based on SrTiO$_3$, many of these phenomena can be effectively… ▽ More Strong correlations, multiple lattice degrees of freedom, and the ease of doping make complex oxides a source of great research interest. Complex oxide heterointerfaces break inversion symmetry and can host a two dimensional carrier gas, which can display a variety of coexisting and competing phenomena. In the case of heterointerfaces based on SrTiO$_3$, many of these phenomena can be effectively tuned by using an electric gate, due to the large dielectric constant of SrTiO$_3$. Most studies so far have focused on (001) oriented heterostructures; however, (111) oriented heterostructures have recently gained attention due to the possibility of finding exotic physics in these systems due their hexagonal surface crystal symmetry. In this work, we use magnetoresistance to study the evolution of spin-orbit interaction and magnetism in a new system, (111) oriented (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$. At more positive values of the gate voltage, which correspond to high carrier densities, we find that transport is multiband, and dominated by high mobility carriers with a tendency towards weak localization. At more negative gate voltages, the carrier density is reduced, the high mobility bands are depopulated, and weak antilocalization effects begin to dominate, indicating that spin-orbit interaction becomes stronger. At millikelvin temperatures, and gate voltages corresponding to the strong spin-orbit regime, we observe hysteresis in magnetoresistance, indicative of ferromagnetism in the system. Our results suggest that in the (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ system, low mobility carriers which experience strong spin-orbit interactions participate in creating magnetic order in the system. △ Less

Submitted 11 March, 2018; v1 submitted 14 November, 2017; originally announced November 2017.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. B 98, 085416 (2018)

Molecular Hydrodynamics: Vortex Formation and Sound Wave Propagation

Authors: Kyeong Hwan Han, Changho Kim, Peter Talkner, George Em Karniadakis, Eok Kyun Lee

Abstract: In the present study, quantitative feasibility tests of the hydrodynamic description of a two-dimensional fluid at the molecular level are performed, both with respect to length and time scales. Using high-resolution fluid velocity data obtained from extensive molecular dynamics simulations, we computed the transverse and longitudinal components of the velocity field by the Helmholtz decomposition… ▽ More In the present study, quantitative feasibility tests of the hydrodynamic description of a two-dimensional fluid at the molecular level are performed, both with respect to length and time scales. Using high-resolution fluid velocity data obtained from extensive molecular dynamics simulations, we computed the transverse and longitudinal components of the velocity field by the Helmholtz decomposition and compared them with those obtained from the linearized Navier-Stokes (LNS) equations with time-dependent transport coefficients. By investigating the vortex dynamics and the sound wave propagation in terms of these field components, we confirm the validity of the LNS description for times comparable to or larger than several mean collision times. The LNS description still reproduces the transverse velocity field accurately at smaller times, but it fails to predict characteristic patterns of molecular origin visible in the longitudinal velocity field. Based on these observations, we validate the main assumptions of the mode-coupling approach. The assumption that the velocity autocorrelation function can be expressed in terms of the fluid velocity field and the tagged particle distribution is found to be remarkably accurate even for times comparable to or smaller than the mean collision time. This suggests that the hydrodynamic-mode description remains valid down to the molecular scale. △ Less

Submitted 15 January, 2018; v1 submitted 3 November, 2017; originally announced November 2017.

Journal ref: J. Chem. Phys. 148, 024506 (2018)

The Mechanism of Electrolyte Gating on High-Tc Cuprates: The Role of Oxygen Migration and Electrostatics

Authors: Lingchao Zhang, Shengwei Zeng, Xinmao Yin, Teguh Citra Asmara, Ping Yang, Kun Han, Yu Cao, Wenxiong Zhou, Dongyang Wan, Chi Sin Tang, Andrivo Rusydi, Ariando, Thirumalai Venkatesan

Abstract: Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controver… ▽ More Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-δ (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific. △ Less

Submitted 4 October, 2017; originally announced October 2017.

Comments: 4 figures; Supporting Information included at the end of the main text

Journal ref: ACS Nano, September 25, 2017

Nature of self-diffusion in two-dimensional fluids

Authors: Bongsik Choi, Kyeong Hwan Han, Changho Kim, Peter Talkner, Akinori Kidera, Eok Kyun Lee

Abstract: Self-diffusion in a two-dimensional simple fluid is investigated by both analytical and numerical means. We investigate the anomalous aspects of self-diffusion in two-dimensional fluids with regards to the mean square displacement, the time-dependent diffusion coefficient, and the velocity autocorrelation function using a consistency equation relating these quantities. We numerically confirm the c… ▽ More Self-diffusion in a two-dimensional simple fluid is investigated by both analytical and numerical means. We investigate the anomalous aspects of self-diffusion in two-dimensional fluids with regards to the mean square displacement, the time-dependent diffusion coefficient, and the velocity autocorrelation function using a consistency equation relating these quantities. We numerically confirm the consistency equation by extensive molecular dynamics simulations for finite systems, corroborate earlier results indicating that the kinematic viscosity approaches a finite, non-vanishing value in the thermodynamic limit, and establish the finite size behavior of the diffusion coefficient. We obtain the exact solution of the consistency equation in the thermodynamic limit and use this solution to determine the large time asymptotics of the mean square displacement, the diffusion coefficient, and the velocity autocorrelation function. An asymptotic decay law of the velocity autocorrelation function resembles the previously known self-consistent form, $1/(t\sqrt{\ln t})$, however with a rescaled time. △ Less

Submitted 6 November, 2017; v1 submitted 19 September, 2017; originally announced September 2017.

Comments: 10 pages, to appear in New Journal of Physics

Journal ref: New J. Phys. 19, 123038 (2017)

Signatures of Electronic Nematicity in (111) LaAlO$_3$/SrTiO$_3$ Interfaces

Authors: S. Davis, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: Symmetry breaking is a fundamental concept in condensed matter physics whose presence often heralds new phases of matter. For instance, the breaking of time reversal symmetry is traditionally linked to magnetic phases in a material, while the breaking of gauge symmetry can lead to superfluidity/superconductivity. Nematic phases are phases in which rotational symmetry is broken while maintaining tr… ▽ More Symmetry breaking is a fundamental concept in condensed matter physics whose presence often heralds new phases of matter. For instance, the breaking of time reversal symmetry is traditionally linked to magnetic phases in a material, while the breaking of gauge symmetry can lead to superfluidity/superconductivity. Nematic phases are phases in which rotational symmetry is broken while maintaining translational symme- try, and are traditionally associated with liquid crystals. Electronic nematic states where the or- thogonal in-plane crystal directions have different electronic properties have garnered a great deal of attention after their discovery in Sr$_3$Ru$_2$O$_7$, multiple iron based superconductors, and in the superconducting state of CuBiSe. Here we demonstrate the existence of an electronic ne- matic phase in the two-dimensional carrier gas that forms at the (111) LaAlO$_3$ (LAO)/SrTiO$_3$ (STO) interface that onsets at low temperatures, and is tunable by an electric field. △ Less

Submitted 28 August, 2017; v1 submitted 16 August, 2017; originally announced August 2017.

Comments: 6 pages 3 figures

Journal ref: Phys. Rev. B 97, 041408 (2018)

Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface

Authors: S. Davis, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: Condensed matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order is known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Rec… ▽ More Condensed matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order is known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Recently, the conducting gas that lives at the interface between the perovskite band insulators LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) has also been shown to host both superconductivity and magnetism. Most previous research has focused on LAO/STO samples in which the interface is in the (001) crystal plane. Relatively little work has focused on the (111) crystal orientation, which has hexagonal symmetry at the interface, and has been predicted to have potentially interesting topological properties, including unconventional superconducting pairing states. Here we report measurements of the magnetoresistance of (111) LAO/STO heterostructures at temperatures at which they are also superconducting. As with the (001) structures, the magnetoresistance is hysteretic, indicating the coexistence of magnetism and superconductivity, but in addition, we find that this magnetoresistance is anisotropic. Such an anisotropic response is completely unexpected in the superconducting state, and suggests that (111) LAO/STO heterostructures may support unconventional superconductivity. △ Less

Submitted 10 July, 2017; originally announced July 2017.

Comments: 6 Pages 4 figures

Journal ref: Phys. Rev. B 96, 134502 (2017)

Electrical Properties and Subband Occupancy at the (La,Sr)(Al,Ta)O$_3$/SrTiO$_3$ Interface

Authors: K. Han, Z. Huang, S. W. Zeng, M. Yang, C. J. Li, W. X. Zhou, X. Renshaw Wang, T. Venkatesan, J. M. D. Coey, M. Goiran, W. Escoffier, Ariando

Abstract: The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density… ▽ More The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density and electron occupancy of two subbands: higher-mobility electrons ($μ_1\approx{10^4}$ cm$^2$V$^{-1}$s$^{-1}$ at 2 K) occupy the lower-energy $3d_{xy}$ subband, while lower-mobility electrons ($μ_1\approx{10^3}$ cm$^{2}$V$^{-1}$s$^{-1}$ at 2 K) propagate in the higher-energy $3d_{xz/yz}$-dominated subband. After removing oxygen vacancies by annealing in oxygen, only a single type of 3dxy electrons remain at the annealed interface, showing tunable Shubnikov-de Haas (SdH) oscillations below 9 T at 2 K and an effective mass of $0.7m_e$. By contrast, no oscillation is observed at the as-grown interface even when electron mobility is increased to $50,000$ cm$^{2}$V$^{-1}$s$^{-1}$ by gating voltage. Our results reveal the important roles of both carrier mobility and subband occupancy in tuning the quantum transport at oxide interfaces. △ Less

Submitted 29 June, 2017; originally announced June 2017.

Comments: 22 pages, 4 figures

Journal ref: Phys. Rev. Materials 1, 011601(R) (2017)

Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface

Authors: V. V. Bal, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of $(111)$ (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ (LSAT/STO) as a function of applied back gate voltage, $V_g$. As is found in (111) LaAlO$_3$/SrTiO$_3$ interfaces, the low-field Hall coefficient is electron-like, but shows a sharp reductio… ▽ More We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of $(111)$ (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ (LSAT/STO) as a function of applied back gate voltage, $V_g$. As is found in (111) LaAlO$_3$/SrTiO$_3$ interfaces, the low-field Hall coefficient is electron-like, but shows a sharp reduction in magnitude below $V_g \sim$ 20 V, indicating the presence of hole-like carriers in the system. This same value of $V_g$ correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. We believe our results can provide insight into the mechanism of magnetism in SrTiO$_3$ based systems. △ Less

Submitted 2 June, 2017; originally announced June 2017.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 111, 081604 (2017)

Low temperature physical properties of Co-35Ni-20Mo-10Cr alloy MP35N

Authors: J. Lu, V. J. Toplosky, R. E. Goddard, K. Han

Abstract: Multiphase Co-35Ni-20Mo-10Cr alloy MP35N is a high strength alloy with excellent corrosion resistance. Its applications span chemical, medical, and food processing industries. Thanks to its high modulus and high strength, it found applications in reinforcement of ultra-high field pulsed magnets. Recently, it has also been considered for reinforcement in superconducting wires used in ultra-high fie… ▽ More Multiphase Co-35Ni-20Mo-10Cr alloy MP35N is a high strength alloy with excellent corrosion resistance. Its applications span chemical, medical, and food processing industries. Thanks to its high modulus and high strength, it found applications in reinforcement of ultra-high field pulsed magnets. Recently, it has also been considered for reinforcement in superconducting wires used in ultra-high field superconducting magnets. For these applications, accurate measurement of its physical properties at cryogenic temperatures is very important. In this paper, physical properties including electrical resistivity, specific heat, thermal conductivity, and magnetization of as-received and aged samples are measured from 2 to 300 K. The electrical resistivity of the aged sample is slightly higher than the as-received sample, both showing a weak linear temperature dependence in the entire range of 2 - 300 K. The measured specific heat Cp of 0.43 J/g-K at 295 K agrees with a theoretical prediction, but is significantly smaller than the values in the literature. The thermal conductivity between 2 and 300 K is in good agreement with the literature which is only available above 77 K. Magnetic property of MP35N changes significantly with aging. The as-received sample exhibits Curie paramagnetism with a Curie constant C = 0.175 K. While the aged sample contains small amounts of a ferromagnetic phase even at room temperature. The measured MP35N properties will be useful for the engineering design of pulsed magnets and superconducting magnets using MP35N as reinforcement. △ Less

Submitted 13 April, 2017; originally announced April 2017.

Comments: 6 figures, 3 tables