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Condensed Matter > Materials Science

arXiv:1805.09226 (cond-mat)
[Submitted on 23 May 2018]

Title:Enhancement in surface mobility and quantum transport of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) topological insulator by controlling the crystal growth conditions

Authors:Kyu-Bum Han, Su Kong Chong, Akira Nagaoka, Suzanne Petryk, Michael A. Scarpulla, Vikram V. Deshpande, Taylor D. Sparks
View a PDF of the paper titled Enhancement in surface mobility and quantum transport of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) topological insulator by controlling the crystal growth conditions, by Kyu-Bum Han and 5 other authors
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Abstract:Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field.
Comments: 22 pages, 6 figures, 1 table
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1805.09226 [cond-mat.mtrl-sci]
  (or arXiv:1805.09226v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1805.09226
arXiv-issued DOI via DataCite

Submission history

From: Vikram Deshpande [view email]
[v1] Wed, 23 May 2018 15:35:34 UTC (855 KB)
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