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Condensed Matter > Materials Science

arXiv:cond-mat/0309473v1 (cond-mat)
[Submitted on 19 Sep 2003 (this version), latest version 12 Jan 2004 (v3)]

Title:High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of the injected spins

Authors:A.M. Bratkovsky, V.V. Osipov
View a PDF of the paper titled High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of the injected spins, by A.M. Bratkovsky and V.V. Osipov
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Abstract: We describe a new mechanism of magnetoresistance based on a tunneling-emission of spin polarized electrons from ferromagnets into semiconductors and precession of electron spin in the semiconductor layer under external magnetic field. A ferromagnet-semiconductor-ferromagnet structure is considered, which includes very thin heavily doped interfacial layers ($\delta$-doped layers). We show that at certain parameters the system is highly sensitive at room-temperature to the magnetic field variations with frequencies up to 100 GHz.
Comments: 5 pages, 2 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:cond-mat/0309473 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0309473v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0309473
arXiv-issued DOI via DataCite

Submission history

From: A Bratkovsky [view email]
[v1] Fri, 19 Sep 2003 20:02:44 UTC (14 KB)
[v2] Thu, 20 Nov 2003 21:18:13 UTC (17 KB)
[v3] Mon, 12 Jan 2004 21:20:39 UTC (17 KB)
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