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Condensed Matter > Materials Science

arXiv:cond-mat/0309473 (cond-mat)
[Submitted on 19 Sep 2003 (v1), last revised 12 Jan 2004 (this version, v3)]

Title:High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins

Authors:A.M. Bratkovsky, V.V. Osipov
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Abstract: New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is described. The FM-S-FM structure is considered, which includes very thin heavily doped (delta-doped) layers at FM-S interfaces. At certain parameters the structure is highly sensitive at room-temperature to variations of the field with frequencies up to 100 GHz. The current oscillates with the field, and its relative amplitude is determined only by the spin polarizations of FM-S junctions at relatively large bias voltage.
Comments: 5 pages, 2 figures, (v2) new plot with a dependence of current J on magnetic field H added in Fig.2 (top panel), minor amendments in the text; (v3) minor typos corrected. To appear in Phys. Rev. Letters
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:cond-mat/0309473 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0309473v3 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0309473
Related DOI: https://doi.org/10.1103/PhysRevLett.92.098302

Submission history

From: A. Bratkovsky [view email]
[v1] Fri, 19 Sep 2003 20:02:44 UTC (14 KB)
[v2] Thu, 20 Nov 2003 21:18:13 UTC (17 KB)
[v3] Mon, 12 Jan 2004 21:20:39 UTC (17 KB)
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