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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2406.14289v1 (cond-mat)
[Submitted on 20 Jun 2024 (this version), latest version 24 Jan 2025 (v2)]

Title:Electrical switching of chirality in rhombohedral graphene Chern insulators

Authors:Jing Ding, Hanxiao Xiang, Jiannan Hua, Wenqiang Zhou, Naitian Liu, Le Zhang, Na Xin, Kenji Watanabe, Takashi Taniguchi, Wei Zhu, Shuigang Xu
View a PDF of the paper titled Electrical switching of chirality in rhombohedral graphene Chern insulators, by Jing Ding and 10 other authors
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Abstract:A Chern insulator hosts topologically protected chiral edge currents with quantized conductance characterized by its Chern number. Switching the chirality of the Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by reversing the sign of the Chern number through a topological phase transition. Here, we report electrically switchable chirality in rhombohedral heptalayer graphene-based Chern insulators. The surface flat band and giant Berry curvature in rhombohedral multilayer graphene provide a highly tunable platform for engineering the topological states. By introducing moire superlattices in rhombohedral heptalayer graphene, we observed a cascade of topological phase transitions at quarter electron filling of a moire band. The Chern number can be continuously tuned from 0, -1, 1 to 2 by electric fields, manifesting as a large anomalous Hall effect and following Streda's formula. Sign reversal and the anomalous Hall effect also occurred at non-integer fillings, suggesting the possibility of electrically tunable topological phase transitions within the regime of fractional Chern insulators. Our work establishes rhombohedral heptalayer graphene moire superlattices as a versatile platform for topological engineering. The realization of switchable chirality enhances the potential application of chiral edge currents in topological circuit interconnects.
Comments: 21 pages, 4 figures in main text
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci); Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:2406.14289 [cond-mat.mes-hall]
  (or arXiv:2406.14289v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2406.14289
arXiv-issued DOI via DataCite

Submission history

From: Shuigang Xu [view email]
[v1] Thu, 20 Jun 2024 13:15:30 UTC (3,830 KB)
[v2] Fri, 24 Jan 2025 02:01:05 UTC (1,417 KB)
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