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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2406.14289 (cond-mat)
[Submitted on 20 Jun 2024 (v1), last revised 24 Jan 2025 (this version, v2)]

Title:Electric-field switchable chirality in rhombohedral graphene Chern insulators stabilized by tungsten diselenide

Authors:Jing Ding, Hanxiao Xiang, Jiannan Hua, Wenqiang Zhou, Naitian Liu, Le Zhang, Na Xin, Bing Wu, Kenji Watanabe, Takashi Taniguchi, Zdenek Sofer, Wei Zhu, Shuigang Xu
View a PDF of the paper titled Electric-field switchable chirality in rhombohedral graphene Chern insulators stabilized by tungsten diselenide, by Jing Ding and 12 other authors
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Abstract:Chern insulators host topologically protected chiral edge currents with quantized conductance characterized by their Chern number. Switching the chirality of a Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by reversing the sign of the Chern number through a topological phase transition. Here, we report electrically switchable chirality in rhombohedral multilayer graphene-based Chern insulators. By introducing moire superlattices in rhombohedral heptalayer graphene, we observed a cascade of topological phase transitions at quarter electron filling of a moire band with the Chern number tunable from -1, 1 to 2. Furthermore, integrating monolayer tungsten diselenide at the moireless interface of rhombohedral decalayer graphene/h-BN superlattices stabilizes the Chern insulators, enabling quantized anomalous Hall resistance of h/2e^2. Remarkably, the Chern number can be switched from -1 to 2 using displacement fields. Our work establishes rhombohedral multilayer graphene moire superlattices as a versatile platform for topological engineering, with switchable chirality offering significant promise for integrating chiral edge currents into topological electronic circuits.
Comments: Include the data from 10L graphene devices. To appear in Physical Review X
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci); Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:2406.14289 [cond-mat.mes-hall]
  (or arXiv:2406.14289v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2406.14289
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. X 15, 011052 (2025)
Related DOI: https://doi.org/10.1103/PhysRevX.15.011052
DOI(s) linking to related resources

Submission history

From: Shuigang Xu [view email]
[v1] Thu, 20 Jun 2024 13:15:30 UTC (3,830 KB)
[v2] Fri, 24 Jan 2025 02:01:05 UTC (1,417 KB)
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