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Substrate-induced spin-torque-like signal in spin-torque ferromagnetic resonance measurement
Authors:
Dingsong Jiang,
Hetian Chen,
Guiping Ji,
Yahong Chai,
Chenye Zhang,
Yuhan Liang,
Jingchun Liu,
Witold Skowroński,
Pu Yu,
Di Yi,
Tianxiang Nan
Abstract:
Oxide thin films and interfaces with strong spin-orbit coupling have recently shown exceptionally high charge-to-spin conversion, making them potential spin-source materials for spintronics. Epitaxial strain engineering using oxide substrates with different lattice constants and symmetries has emerged as a mean to further enhance charge-to-spin conversion. However, high relative permittivity and d…
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Oxide thin films and interfaces with strong spin-orbit coupling have recently shown exceptionally high charge-to-spin conversion, making them potential spin-source materials for spintronics. Epitaxial strain engineering using oxide substrates with different lattice constants and symmetries has emerged as a mean to further enhance charge-to-spin conversion. However, high relative permittivity and dielectric loss of commonly used oxide substrates, such as SrTiO3, can cause significant current shunting in substrates at high frequency, which may strongly affect spin-torque measurement and potentially result in an inaccurate estimation of charge-to-spin conversion efficiency. In this study, we systematically evaluate the influence of various oxide substrates for the widely-used spin-torque ferromagnetic resonance (ST-FMR) measurement. Surprisingly, we observed substantial spin-torque signals in samples comprising only ferromagnetic metal on oxide substrates with high relative permittivity (e.g., SrTiO3 and KTaO3), where negligible signal should be initially expected. Notably, this unexpected signal shows a strong correlation with the capacitive reactance of oxide substrates and the leakage radio frequency (RF) current within the substrate. By revising the conventional ST-FMR analysis model, we attribute this phenomenon to a 90-degree phase difference between the RF current flowing in the metal layer and in the substrate. We suggest that extra attention should be paid during the ST-FMR measurements, as this artifact could dominate over the real spin-orbit torque signal from high-resistivity spin-source materials grown on substrate with high relative permittivity.
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Submitted 20 August, 2024;
originally announced August 2024.
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Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory
Authors:
Yahong Chai,
Yuhan Liang,
Cancheng Xiao,
Yue Wang,
Bo Li,
Dingsong Jiang,
Pratap Pal,
Yongjian Tang,
Hetian Chen,
Yuejie Zhang,
Witold Skowroński,
Qinghua Zhang,
Lin Gu,
Jing Ma,
Pu Yu,
Jianshi Tang,
Yuan-Hua Lin,
Di Yi,
Daniel C. Ralph,
Chang-Beom Eom,
Huaqiang Wu,
Tianxiang Nan
Abstract:
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multife…
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Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multiferroic magnon modes can be electrically excited and controlled. In this device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. We show that the ferroelectric polarization can electrically modulate the magnon spin-torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. By manipulating the two coupled non-volatile state variables (ferroelectric polarization and magnetization), we further demonstrate reconfigurable logic-in-memory operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.
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Submitted 25 September, 2023;
originally announced September 2023.
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Towards mutual synchronization of serially connected Spin Torque Oscillators based on magnetic tunnel junctions
Authors:
Piotr Rzeszut,
Jakub Mojsiejuk,
Witold Skowroński,
Sumito Tsunegi,
Kay Yakushiji,
Hitoshi Kubota,
Shinji Yuasa
Abstract:
Multiple neuromorphic applications require the tuning of two or more devices to a common signal. Various types of neuromorphic computation can be realized using spintronic oscillators, where the DC current induces magnetization precession, which turns into an AC voltage generator. However, in spintronics, synchronization of two oscillators using a DC signal is still a challenging problem because i…
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Multiple neuromorphic applications require the tuning of two or more devices to a common signal. Various types of neuromorphic computation can be realized using spintronic oscillators, where the DC current induces magnetization precession, which turns into an AC voltage generator. However, in spintronics, synchronization of two oscillators using a DC signal is still a challenging problem because it requires a certain degree of similarity between devices that are to be synchronized, which may be difficult to achieve due to device parameter distribution during the fabrication process. In this work, we present experimental results on the mechanisms of synchronization of spin-torque oscillators. Devices are based on magnetic tunnel junction with a perpendicularly magnetized free layer and take advantage of a uniform magnetization precision in the presence of the magnetic field and a DC bias. By using an external microwave source, we show the optimal condition for the synchronization of the magnetic tunnel junctions. Finally, we present results on the in-series connection of two junctions and discuss the possible path towards improving oscillation power and linewidth. In addition, using numerical simulations of the coupled oscillators model, we aim to reproduce the conditions of the experiments and determine the tolerance for achieving synchronization.
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Submitted 14 February, 2025; v1 submitted 20 June, 2023;
originally announced June 2023.
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Numerical Model Of Harmonic Hall Voltage Detection For Spintronic Devices
Authors:
Sławomir Ziętek,
Jakub Mojsiejuk,
Krzysztof Grochot,
Stanisław Łazarski,
Witold Skowroński,
Tomasz Stobiecki
Abstract:
We present a numerical macrospin model for harmonic voltage detection in multilayer spintronic devices. The core of the computational backend is based on the Landau-Lifshitz-Gilbert-Slonczewski equation, which combines high performance with satisfactory, for large-scale applications, agreement with the experimental results. We compare the simulations with the experimental findings in Ta/CoFeB bila…
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We present a numerical macrospin model for harmonic voltage detection in multilayer spintronic devices. The core of the computational backend is based on the Landau-Lifshitz-Gilbert-Slonczewski equation, which combines high performance with satisfactory, for large-scale applications, agreement with the experimental results. We compare the simulations with the experimental findings in Ta/CoFeB bilayer system for angular- and magnetic field-dependent resistance measurements, electrically detected magnetisation dynamics, and harmonic Hall voltage detection. Using simulated scans of the selected system parameters such as the polar angle $θ$, magnetisation saturation ($μ_\textrm{0}M_\textrm{s}$) or uniaxial magnetic anisotropy ($K_\textrm{u}$) we show the resultant changes in the harmonic Hall voltage, demonstrating the dominating influence of the $μ_\textrm{0}M_\textrm{s}$ on the first and second harmonics. In the spin-diode ferromagnetic resonance (SD-FMR) technique resonance method the ($μ_\textrm{0}M_\textrm{s}$, $K_\textrm{u}$) parameter space may be optimised numerically to obtain a set of viable curves that fit the experimental data.
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Submitted 1 February, 2022;
originally announced February 2022.
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Multi-state MRAM cells for hardware neuromorphic computing
Authors:
Piotr Rzeszut,
Jakub Chęciński,
Ireneusz Brzozowski,
Sławomir Ziętek,
Witold Skowroński,
Tomasz Stobiecki
Abstract:
Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including high-frequency electronics, energy harvesting or random number generators. Recently, MTJs have been also proposed in designs of a new platforms for unconventional o…
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Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including high-frequency electronics, energy harvesting or random number generators. Recently, MTJs have been also proposed in designs of a new platforms for unconventional or bio-inspired computing. In the present work, it is shown that serially connected MTJs forming a multi-state memory cell can be used in a hardware implementation of a neural computing device. A behavioral model of the multi-cell is proposed based on the experimentally determined MTJ parameters. The main purpose of the mutli-cell is the formation of the quantized weights of the network, which can be programmed using the proposed electronic circuit. Mutli-cells are connected to CMOS-based summing amplifier and sigmoid function generator, forming an artificial neuron. The operation of the designed network is tested using a recognition of the hand-written digits in 20x20 pixel matrix and shows detection ratio comparable to the software algorithm, using the weight stored in a multi-cell consisting of four MTJs or more.
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Submitted 5 February, 2021;
originally announced February 2021.
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Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque
Authors:
Krzysztof Grochot,
Łukasz Karwacki,
Stanisław Łazarski,
Witold Skowroński,
Jarosław Kanak,
Wiesław Powroźnik,
Piotr Kuświk,
Mateusz Kowacz,
Feliks Stobiecki,
Tomasz Stobiecki
Abstract:
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer. Using current-driven switching, magnetoresistance and anomalous Hall effect measurements, perpendicular and in-plane exchange bias field were determined. Several H…
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In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer. Using current-driven switching, magnetoresistance and anomalous Hall effect measurements, perpendicular and in-plane exchange bias field were determined. Several Hall-bar devices possessing in-plane exchange bias from both systems were selected and analyzed in relation to our analytical switching model of critical current density as a function of Pt and W thickness, resulting in estimation of effective spin Hall angle and perpendicular effective magnetic anisotropy. We demonstrate in both the Pt/Co/NiO and the W/Co/NiO systems the deterministic Co magnetization switching without external magnetic field which was replaced by in-plane exchange bias field. Moreover, we show that due to a higher effective spin Hall angle in W than in Pt-systems the relative difference between the resistance states in the magnetization current switching to difference between the resistance states in magnetic field switching determined by anomalous Hall effect ($ΔR/ΔR_{\text{AHE}}$) is about twice higher in W than Pt, while critical switching current density in W is one order lower than in Pt-devices. The current switching stability and training process is discussed in detail.
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Submitted 3 December, 2020; v1 submitted 4 July, 2020;
originally announced July 2020.
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Spin-orbit torque induced magnetisation dynamics and switching in CoFeB/Ta/CoFeB system with mixed magnetic anisotropy
Authors:
Stanisław Łazarski,
Witold Skowroński,
Krzysztof Grochot,
Wiesław Powroźnik,
Jarosław Kanak,
Marek Schmidt,
Tomasz Stobiecki
Abstract:
Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange coupling (IEC), measured using ferromagnetic resonance technique is modified by varying thickness of Ta spacer. The evolution of the IEC leads to different orientation…
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Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange coupling (IEC), measured using ferromagnetic resonance technique is modified by varying thickness of Ta spacer. The evolution of the IEC leads to different orientation of the magnetic anisotropy axes of two CoFeB layers: for thicker Ta layer where magnetisation prefers antiferromagnetic ordering and for thinner Ta layer where ferromagnetic coupling exists. Magnetisation state of the CoFeB layer exhibiting PMA is controlled by the spin-polarized current originating from SOT in $μm$ sized Hall bars. The evolution of the critical SOT current density with Ta thickness is presented, showing an increase with decreasing $t_\mathrm{Ta}$, which coincides with the coercive field dependence. In a narrow range of $t_\mathrm{Ta}$ corresponding to the ferromagnetic IEC, the field-free SOT-induced switching is achieved.
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Submitted 22 June, 2020;
originally announced June 2020.
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Microwave magnetic field modulation of spin torque oscillator based on perpendicular magnetic tunnel junctions
Authors:
Witold Skowroński,
Jakub Chęciński,
Sławomir Ziętek,
Kay Yakushiji,
Shinji Yuasa
Abstract:
Modulation of a spin-torque oscillator (STO) signal based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which enables microwave field application during STO operation. The frequency modulation by the microwave magnetic field of up to 3 GHz is explored, showing a potential for…
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Modulation of a spin-torque oscillator (STO) signal based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which enables microwave field application during STO operation. The frequency modulation by the microwave magnetic field of up to 3 GHz is explored, showing a potential for application in high-data-rate communication technologies. Moreover, an inductive loop is used for self-synchronization of the STO signal, which after field-locking exhibits significant improvement of the linewidth and oscillation power.
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Submitted 20 September, 2019;
originally announced September 2019.
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Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets
Authors:
Łukasz Karwacki,
Krzysztof Grochot,
Stanisław Łazarski,
Witold Skowroński,
Jarosław Kanak,
Wiesław Powroźnik,
Józef Barnaś,
Feliks Stobiecki,
Tomasz Stobiecki
Abstract:
We revisit the theory and experiment on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR and anisotropic magnetoresistance (AMR) in four different bilayer systems: W/$\text{Co}_{20}\text{Fe}_{60}\text{B}_{20}$, W/Co,…
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We revisit the theory and experiment on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR and anisotropic magnetoresistance (AMR) in four different bilayer systems: W/$\text{Co}_{20}\text{Fe}_{60}\text{B}_{20}$, W/Co, $\text{Co}_{20}\text{Fe}_{60}\text{B}_{20}$/Pt, and Co/Pt. To do this, the AMR is explicitly included in the diffusion transport equations in the ferromagnet. The results allow precise determination of different contributions to the magnetoresistance, which can play an important role in optimizing prospective magnetic stray field sensors. They also may be useful in the determination of spin transport properties of metallic magnetic heterostructures in other experiments based on magnetoresistance measurements.
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Submitted 11 August, 2019;
originally announced August 2019.
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High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions
Authors:
Witold Skowronski,
Stanislaw Lazarski,
Jakub Mojsiejuk,
Jakub Checinski,
Marek Frankowski,
Takayuki Nozaki,
Kay Yakushiji,
Shinji Yuasa
Abstract:
Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-depen…
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Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modelling is used to analyse the field- and angular-dependence of the V-FMR signal and to support experimental magnetization damping extraction.
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Submitted 4 June, 2019;
originally announced June 2019.
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Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions
Authors:
Piotr Rzeszut,
Witold Skowroński,
Sławomir Ziętek,
Jerzy Wrona,
Tomasz Stobiecki
Abstract:
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs fabricated on a single wafer stack, with a serial connections realized using top-to-bottom vias. Tunneling magnetoreistance effect above 130%, current induced magnetiz…
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Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs fabricated on a single wafer stack, with a serial connections realized using top-to-bottom vias. Tunneling magnetoreistance effect above 130%, current induced magnetization switching in zero external magnetic field and stability diagram analysis of single, two-bit and three-bit cells are presented together with thermal stability. The proposed design is easy to manufacture and can lead to increase capacity of future MRAM devices.
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Submitted 22 March, 2019; v1 submitted 21 March, 2019;
originally announced March 2019.
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Field-free spin-orbit torque switching in Co/Pt/Co multilayer with mixed magnetic anisotropies
Authors:
Stanisław Łazarski,
Witold Skowroński,
Jarosław Kanak,
Łukasz Karwacki,
Sławomir Ziętek,
Krzysztof Grochot,
Tomasz Stobiecki,
Feliks Stobiecki
Abstract:
Spin-orbit-torque (SOT) induced magnetization switching in Co/Pt/Co trilayer, with two Co layers exhibiting magnetization easy axes orthogonal to each other is investigated. Pt layer is used as a source of spin-polarized current as it is characterized by relatively high spin-orbit coupling. The spin Hall angle of Pt, $θ= 0.08$ is quantitatively determined using spin-orbit torque ferromagnetic reso…
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Spin-orbit-torque (SOT) induced magnetization switching in Co/Pt/Co trilayer, with two Co layers exhibiting magnetization easy axes orthogonal to each other is investigated. Pt layer is used as a source of spin-polarized current as it is characterized by relatively high spin-orbit coupling. The spin Hall angle of Pt, $θ= 0.08$ is quantitatively determined using spin-orbit torque ferromagnetic resonance technique. In addition, Pt serves as a spacer between two Co layers and depending on it's thickness, different interlayer exchange coupling (IEC) energy between ferromagnets is induced. Intermediate IEC energies, resulting in a top Co magnetization tilted from the perpendicular direction, allows for SOT-induced feld-free switching of the top Co layer. The switching process is discussed in more detail, showing the potential of the system for neuromorphic applications.
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Submitted 8 March, 2019;
originally announced March 2019.
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Determination of spin Hall angle in heavy metal/CoFeB-based heterostructures with interfacial spin-orbit fields
Authors:
Witold Skowroński,
Łukasz Karwacki,
Sławomir Ziętek,
Jarosław Kanak,
Stanisław Łazarski,
Krzysztof Grochot,
Tomasz Stobiecki,
Piotr Kuświk,
Feliks Stobiecki,
Józef Barnaś
Abstract:
Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit heavy metal (HM) thickness dependence of symmetric and antisymmetric components of the SOT-FMR signal. The analysis resulted in a determination of the properties of…
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Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit heavy metal (HM) thickness dependence of symmetric and antisymmetric components of the SOT-FMR signal. The analysis resulted in a determination of the properties of HM layers, such as spin Hall angle and spin diffusion length. The spin Hall angle of -0.36 and 0.09 has been found in the W/CoFeB and CoFeB/Pt bilayers, respectively, which add up in the case of W/CoFeB/Pt trilayer. More importantly, we have determined effective interfacial spin-orbit fields at both W/CoFeB and CoFeB/Pt interfaces, which are shown to cancel Oersted field for particular thicknesses of the heavy metal layers, leading to pure spin-current-induced dynamics and indicating the possibility for a more efficient magnetization switching.
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Submitted 1 October, 2018;
originally announced October 2018.
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Biaxial magnetic field setup for angular magnetic measurements of thin films and spintronic nanodevices
Authors:
Piotr Rzeszut,
Witold Skowroński,
Sławomir Ziętek,
Piotr Ogrodnik,
Tomasz Stobiecki
Abstract:
The biaxial magnetic-field setup for angular magnetic measurements of thin film and spintronic devices is designed and presented. The setup allows for application of the in-plane magnetic field using a quadrupole electromagnet, controlled by power supply units and integrated with an electromagnet biaxial magnetic field sensor. In addition, the probe station is equipped with a microwave circuitry,…
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The biaxial magnetic-field setup for angular magnetic measurements of thin film and spintronic devices is designed and presented. The setup allows for application of the in-plane magnetic field using a quadrupole electromagnet, controlled by power supply units and integrated with an electromagnet biaxial magnetic field sensor. In addition, the probe station is equipped with a microwave circuitry, which enables angle-resolved spin torque oscillation measurements. The angular dependencies of magnetoresistance and spin diode effect in a giant magnetoresistance strip are shown as an operational verification of the experimental setup. We adapted an analytical macrospin model to reproduce both the resistance and spin-diode angular dependency measurements.
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Submitted 17 August, 2017;
originally announced August 2017.
