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Physics > Applied Physics

arXiv:1906.01301 (physics)
[Submitted on 4 Jun 2019]

Title:High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions

Authors:Witold Skowronski, Stanislaw Lazarski, Jakub Mojsiejuk, Jakub Checinski, Marek Frankowski, Takayuki Nozaki, Kay Yakushiji, Shinji Yuasa
View a PDF of the paper titled High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions, by Witold Skowronski and 7 other authors
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Abstract:Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modelling is used to analyse the field- and angular-dependence of the V-FMR signal and to support experimental magnetization damping extraction.
Comments: Manuscript containing 4 pages and 4 figures
Subjects: Applied Physics (physics.app-ph); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1906.01301 [physics.app-ph]
  (or arXiv:1906.01301v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.1906.01301
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1063/1.5113681
DOI(s) linking to related resources

Submission history

From: Witold SkowroĊ„ski [view email]
[v1] Tue, 4 Jun 2019 09:45:30 UTC (311 KB)
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