Showing 1–11 of 11 results for author: Bergman, K

Highly Uniform Thermally Undercut Silicon Photonic Devices in a 300 mm CMOS Foundry Process

Authors: Robert Parsons, Kaylx Jang, Yuyang Wang, Asher Novick, A. Matthew Smith, Christopher C. Tison, Yonas Gebregiorgis, Venkatesh Deenadayalan, Matthew van Niekerk, Lewis Carpenter, Tat Ngai, Gerald Leake, Daniel Coleman, Xiang Meng, Stefan Preble, Michael L. Fanto, Keren Bergman, Anthony Rizzo

Abstract: Silicon photonic devices fundamental to high-density wavelength-division multiplexed (DWDM) optical links and photonic switching networks, such as resonant modulators and Mach-Zehnder interferometers (MZIs), are highly sensitive to fabrication variations and operational temperature swings. However, thermal tuning to compensate for fabrication and operational temperature variations can result in pr… ▽ More Silicon photonic devices fundamental to high-density wavelength-division multiplexed (DWDM) optical links and photonic switching networks, such as resonant modulators and Mach-Zehnder interferometers (MZIs), are highly sensitive to fabrication variations and operational temperature swings. However, thermal tuning to compensate for fabrication and operational temperature variations can result in prohibitive power consumption, challenging the scalability of energy-efficient photonic integrated circuits (PICs). In this work, we develop and demonstrate a wafer-scale thermal undercut process in a 300 mm complementary metal oxide semiconductor (CMOS) foundry that dramatically improves the thermal isolation of thermo-optic devices by selectively removing substrate material beneath the waveguides and resonators. This approach significantly reduces the power required for thermal tuning across multiple device architectures, achieving almost a 5$\times$ improvement in tuning efficiency in a state-of-the-art 4.5 $μ$m radius microdisk modulator and a 40$\times$ improvement in efficiency for a MZI phase shifter. To the best of the authors' knowledge, we demonstrate the first wafer-scale comparison of non-undercut and undercut silicon photonic devices using comprehensive wafer-scale measurements across 64 reticles of a 300 mm silicon-on-insulator (SOI) wafer. Further, we demonstrate a comprehensive wafer-scale analysis of the influence of undercut trench opening geometry on device tuning efficiency. Notably, we observe highly uniform performance across the full 300 mm wafer for multiple device types, emphasizing that our process can be scaled to large-scale photonic circuits with high yield. These results open new opportunities for large-scale integrated photonic circuits using thermo-optic devices, paving the way for scalable, low-power silicon photonic systems. △ Less

Submitted 6 June, 2025; v1 submitted 11 March, 2025; originally announced March 2025.

Comments: 11 pages, 6 figures

Tri-layer SiN-on-Si 8x8 Optical Switches with Thermo-optic and Electro-optic Actuators

Authors: Bohao Sun, Chunhui Yao, Tongyun Li, Ziyao Zhang, Peng Bao, Minjia Chen, Alan Yilun Yuan, Chenxi Tan, Zhitian Shi, Adrian Wonfor, Seb Savory, Keren Bergman, Richard Penty, Qixiang Cheng

Abstract: We present two spatial-multiplexed switch-and-select (S&S) 8x8 optical switches incorporating a tri-layer SiN-on-Si platform, one equipped with thermo-optic (T-O) and the other electro-optic (E-O) switching elements. To the best of our knowledge, the electro-optic switch fabric is the first-of-its-kind device assembled in such a multi-layer platform. The shuffle between the multiplexer and demulti… ▽ More We present two spatial-multiplexed switch-and-select (S&S) 8x8 optical switches incorporating a tri-layer SiN-on-Si platform, one equipped with thermo-optic (T-O) and the other electro-optic (E-O) switching elements. To the best of our knowledge, the electro-optic switch fabric is the first-of-its-kind device assembled in such a multi-layer platform. The shuffle between the multiplexer and demultiplexer array is established via a tri-layer Si-SiN-SiN structure, creating a three-dimensional crossing-free photonic shuffle network. At the same time, the implementation of the S&S topology can effectively suppress the first-order crosstalk. The measured on-chip losses for the T-O switch range from 2.1 to 11.5 dB, with a 5.2 dB average, while the E-O device exhibits losses between 8.7 to 19.6 dB, with a 15.1 dB average. Both switches demonstrate ultra-low crosstalk, with measured ranges of 38.9 to 50.8 dB and 42.8 to 51.9 dB, for the T-O and E-O devices respectively. The switching times are 17.6 us for the T-O switch and 5.9 ns with the E-O actuated one. These performance metrics highlight the potential of these switches for next-generation data center applications. △ Less

Submitted 22 February, 2025; v1 submitted 16 February, 2025; originally announced February 2025.

3D photonics for ultra-low energy, high bandwidth-density chip data links

Authors: Stuart Daudlin, Anthony Rizzo, Sunwoo Lee, Devesh Khilwani, Christine Ou, Songli Wang, Asher Novick, Vignesh Gopal, Michael Cullen, Robert Parsons, Alyosha Molnar, Keren Bergman

Abstract: Artificial intelligence (AI) hardware is positioned to unlock revolutionary computational abilities across diverse fields ranging from fundamental science [1] to medicine [2] and environmental science [3] by leveraging advanced semiconductor chips interconnected in vast distributed networks. However, AI chip development has far outpaced that of the networks that connect them, as chip computation s… ▽ More Artificial intelligence (AI) hardware is positioned to unlock revolutionary computational abilities across diverse fields ranging from fundamental science [1] to medicine [2] and environmental science [3] by leveraging advanced semiconductor chips interconnected in vast distributed networks. However, AI chip development has far outpaced that of the networks that connect them, as chip computation speeds have accelerated a thousandfold faster than communication bandwidth over the last two decades [4, 5]. This gap is the largest barrier for scaling AI performance [6, 7] and results from the disproportionately high energy expended to transmit data [8], which is two orders of magnitude more intensive than computing [9]. Here, we show a leveling of this long-standing discrepancy and achieve the lowest energy optical data link to date through dense 3D integration of photonic and electronic chips. At 120 fJ of consumed energy per communicated bit and 5.3 Tb/s bandwidth per square millimeter of chip area, our platform simultaneously achieves a twofold improvement in both energy consumption and bandwidth density relative to prior demonstrations [10, 11]. These improvements are realized through employing massively parallel 80 channel microresonator-based transmitter and receiver arrays operating at 10 Gb/s per channel, occupying a combined chip footprint of only 0.32 mm2. Furthermore, commercial complementary metal-oxide-semiconductor (CMOS) foundries fabricate both the electronic and photonic chips on 300 mm wafers, providing a clear avenue to volume scaling. Through these demonstrated ultra-energy efficient, high bandwidth data communication links, this work eliminates the bandwidth bottleneck between spatially distanced compute nodes and will enable a fundamentally new scale of future AI computing hardware without constraints on data locality. △ Less

Submitted 2 October, 2023; originally announced October 2023.

Process Variation-Aware Compact Model of Strip Waveguides for Photonic Circuit Simulation

Authors: Aneek James, Anthony Rizzo, Yuyang Wang, Asher Novick, Songli Wang, Robert Parsons, Kaylx Jang, Maarten Hattink, Keren Bergman

Abstract: We report a novel process variation-aware compact model of strip waveguides that is suitable for circuit-level simulation of waveguide-based process design kit (PDK) elements. The model is shown to describe both loss and -- using a novel expression for the thermo-optic effect in high index contrast materials -- the thermo-optic behavior of strip waveguides. A novel group extraction method enables… ▽ More We report a novel process variation-aware compact model of strip waveguides that is suitable for circuit-level simulation of waveguide-based process design kit (PDK) elements. The model is shown to describe both loss and -- using a novel expression for the thermo-optic effect in high index contrast materials -- the thermo-optic behavior of strip waveguides. A novel group extraction method enables modeling the effective index's ($n_{\mathrm{eff}}$) sensitivity to local process variations without the presumption of variation source. Use of Euler-bend Mach-Zehnder interferometers (MZIs) fabricated in a 300~mm wafer run allow model parameter extraction at widths up to 2.5~$μ$m (highly multi-mode) with strong suppression of higher-order mode excitation. Experimental results prove the reported model can self-consistently describe waveguide phase, loss, and thermo-optic behavior across all measured devices over an unprecedented range of optical bandwidth, waveguide widths, and temperatures. △ Less

Submitted 4 January, 2023; originally announced January 2023.

Journal ref: Journal of Lightwave Technology 41 (2023) 2801 - 2814

Fabrication-Robust Silicon Photonic Devices in Standard Sub-Micron Silicon-on-Insulator Processes

Authors: Anthony Rizzo, Utsav Dave, Asher Novick, Alexandre Freitas, Samantha P. Roberts, Aneek James, Michal Lipson, Keren Bergman

Abstract: Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such variations are particularly troublesome for phase-sensitive devices such as interferometers and resonators, which exhibit drastic changes in performance as a resul… ▽ More Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such variations are particularly troublesome for phase-sensitive devices such as interferometers and resonators, which exhibit drastic changes in performance as a result of these fabrication-induced phase errors. In this Letter, we propose and experimentally demonstrate a design methodology for dramatically reducing device sensitivity to silicon width variations. We apply this methodology to a highly phase-sensitive device, the ring-assisted Mach Zehnder interferometer (RAMZI), and show comparable performance and footprint to state-of-the-art devices while substantially reducing stochastic phase errors from etch variations. This decrease in sensitivity is directly realized as energy savings by significantly lowering the required corrective thermal tuning power, providing a promising path towards ultra-energy-efficient large-scale silicon photonic circuits. △ Less

Submitted 23 May, 2022; originally announced May 2022.

Massively Scalable Wavelength Diverse Integrated Photonic Linear Neuron

Authors: Matthew van Niekerk, Anthony Rizzo, Hector Rubio Rivera, Gerald Leake, Daniel Coleman, Christopher Tison, Michael Fanto, Keren Bergman, Stefan Preble

Abstract: As computing resource demands continue to escalate in the face of big data, cloud-connectivity and the internet of things, it has become imperative to develop new low-power, scalable architectures. Neuromorphic photonics, or photonic neural networks, have become a feasible solution for the physical implementation of efficient algorithms directly on-chip. This application is primarily due to the li… ▽ More As computing resource demands continue to escalate in the face of big data, cloud-connectivity and the internet of things, it has become imperative to develop new low-power, scalable architectures. Neuromorphic photonics, or photonic neural networks, have become a feasible solution for the physical implementation of efficient algorithms directly on-chip. This application is primarily due to the linear nature of light and the scalability of silicon photonics, specifically leveraging the wide-scale complementary metal-oxide-semiconductor (CMOS) manufacturing infrastructure used to fabricate microelectronics chips. Current neuromorphic photonic implementations stem from two paradigms: wavelength coherent and incoherent. Here, we introduce a novel architecture that supports coherent and incoherent operation to increase the capability and capacity of photonic neural networks with a dramatic reduction in footprint compared to previous demonstrations. As a proof-of-principle, we experimentally demonstrate simple addition and subtraction operations on a foundry-fabricated silicon photonic chip. Additionally, we experimentally validate an on-chip network to predict the logical 2-bit gates AND, OR, and XOR to accuracies of $96.8\%, 99\%,$ and $98.5\%$, respectively. This architecture is compatible with highly wavelength parallel sources, enabling massively scalable photonic neural networks. △ Less

Submitted 25 August, 2022; v1 submitted 11 May, 2022; originally announced May 2022.

Integrated Kerr frequency comb-driven silicon photonic transmitter

Authors: Anthony Rizzo, Asher Novick, Vignesh Gopal, Bok Young Kim, Xingchen Ji, Stuart Daudlin, Yoshitomo Okawachi, Qixiang Cheng, Michal Lipson, Alexander L. Gaeta, Keren Bergman

Abstract: The exponential growth of computing needs for artificial intelligence and machine learning has had a dramatic impact on data centre energy consumption, which has risen to environmentally significant levels. Using light to send information between compute nodes can dramatically decrease this energy consumption while simultaneously increasing bandwidth. Through wavelength-division multiplexing with… ▽ More The exponential growth of computing needs for artificial intelligence and machine learning has had a dramatic impact on data centre energy consumption, which has risen to environmentally significant levels. Using light to send information between compute nodes can dramatically decrease this energy consumption while simultaneously increasing bandwidth. Through wavelength-division multiplexing with chip-based microresonator Kerr frequency combs, independent information channels can be encoded onto many distinct colours of light in the same optical fibre for massively parallel data transmission with low energy. While previous demonstrations have relied on benchtop equipment for filtering and modulating Kerr comb wavelength channels, data centre interconnects require a compact on-chip form factor for these operations. Here, we demonstrate the first integrated silicon photonic transmitter using a Kerr comb source. The demonstrated architecture is scalable to hundreds of wavelength channels, enabling a fundamentally new class of massively parallel terabit-scale optical interconnects for future green hyperscale data centres. △ Less

Submitted 8 September, 2021; originally announced September 2021.

A highly scalable fully non-blocking silicon photonic switch fabric

Authors: Dessislava Nikolova, David M. Calhoun, Yang Liu, Sebastien Rumley, Ari Novack, Tom Baehr-Jones, Michael Hochberg, Keren Bergman

Abstract: Large port count spatial optical switches will facilitate flexible and energy efficient data movement in future data communications systems, especially if they are capable of nanosecond-order reconfiguration times. In this work, we demonstrate an 8x8 microring-based silicon photonic switch with software controlled switching. The proposed switch architecture is modular as it assembles multiple iden… ▽ More Large port count spatial optical switches will facilitate flexible and energy efficient data movement in future data communications systems, especially if they are capable of nanosecond-order reconfiguration times. In this work, we demonstrate an 8x8 microring-based silicon photonic switch with software controlled switching. The proposed switch architecture is modular as it assembles multiple identical components with multiplexing/demultiplexing functionalities. The switch is fully non-blocking, has path independent insertion loss, low crosstalk and is straightforward to control. A scalability analysis shows that this architecture can scale to very large port counts. This work represents the first demonstration of real-time firmware controlled switching with silicon photonics devices integrated at the chip scale. △ Less

Submitted 31 December, 2015; originally announced December 2015.

Comments: 25 pages, 8 figures

Integrated switch for simultaneous mode-division multiplexing (MDM) and wavelength-division multiplexing (WDM)

Authors: Brian Stern, Xiaoliang Zhu, Christine P. Chen, Lawrence D. Tzuang, Jaime Cardenas, Keren Bergman, Michal Lipson

Abstract: Leveraging the spatial modes of multimode waveguides using mode-division multiplexing (MDM) on an integrated photonic chip allows unprecedented scaling of bandwidth density for on-chip communication. Switching channels between waveguides is critical for future scalable optical networks, but its implementation in multimode waveguides must address how to simultaneously control modes with vastly diff… ▽ More Leveraging the spatial modes of multimode waveguides using mode-division multiplexing (MDM) on an integrated photonic chip allows unprecedented scaling of bandwidth density for on-chip communication. Switching channels between waveguides is critical for future scalable optical networks, but its implementation in multimode waveguides must address how to simultaneously control modes with vastly different optical properties. Here we present a platform for switching signals between multimode waveguides based on individually processing the spatial mode channels using single-mode elements. Using this wavelength-division multiplexing (WDM) compatible platform, we demonstrate a 1x2 multimode switch for a silicon chip which routes four data channels with low (<-20 dB) crosstalk. We show bit-error rates below 10^-9 and power penalties below 1.4 dB on all channels while routing 10 Gbps data when each channel is input and routed separately. The switch exhibits an additional power penalty of less than 2.4 dB when all four channels are simultaneously routed. △ Less

Submitted 16 February, 2015; originally announced February 2015.

Comments: 13 pages; 6 figures

Extrinsic Photodiodes for Integrated Mid-Infrared Silicon Photonics

Authors: Richard R. Grote, Brian Souhan, Noam Ophir, Jeffrey B. Driscoll, Keren Bergman, Hassaram Bakhru, William M. J. Green, Richard M. Osgood Jr

Abstract: Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials. Leveraging the dopant-induced sub-bandgap trap-states used in bulk photoconductors… ▽ More Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials. Leveraging the dopant-induced sub-bandgap trap-states used in bulk photoconductors for waveguide integrated mid-infrared detectors offers simple processing, integration, and operation throughout the mid-infrared by appropriate choice of dopant. In particular, Si doped with Zn forms two trap levels ~ 0.3 eV and ~ 0.58 eV above the valence band, and has been utilized extensively for cryogenically cooled bulk extrinsic photoconductors. In this letter, we present room temperature operation of Zn+ implanted Si waveguide photodiodes from 2200 nm to 2400 nm, with measured responsivities of up to 87 mA/W and low dark currents of < 10 microamps. △ Less

Submitted 24 June, 2014; originally announced June 2014.

Simultaneous Mode and Wavelength Division Multiplexing On-Chip

Authors: Lian-Wee Luo, Noam Ophir, Christine Chen, Lucas H. Gabrielli, Carl B. Poitras, Keren Bergman, Michal Lipson

Abstract: Significant effort in optical-fiber research has been put in recent years into realizing mode-division multiplexing (MDM) in conjunction with wavelength-division multiplexing (WDM) to enable further scaling of the communication bandwidth per fiber. In contrast almost all integrated photonics operate exclusively in the single-mode regime. MDM is rarely considered for integrated photonics due to the… ▽ More Significant effort in optical-fiber research has been put in recent years into realizing mode-division multiplexing (MDM) in conjunction with wavelength-division multiplexing (WDM) to enable further scaling of the communication bandwidth per fiber. In contrast almost all integrated photonics operate exclusively in the single-mode regime. MDM is rarely considered for integrated photonics due to the difficulty in coupling selectively to high-order modes which usually results in high inter-modal crosstalk. Here we show the first demonstration of simultaneous on-chip mode and wavelength division multiplexing with low modal crosstalk and loss. Our approach can potentially increase the aggregate data rate by many times for on-chip ultra-high bandwidth communications. △ Less

Submitted 10 June, 2013; originally announced June 2013.