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Physics > Optics

arXiv:1406.6420 (physics)
[Submitted on 25 Jun 2014]

Title:Extrinsic Photodiodes for Integrated Mid-Infrared Silicon Photonics

Authors:Richard R. Grote, Brian Souhan, Noam Ophir, Jeffrey B. Driscoll, Keren Bergman, Hassaram Bakhru, William M. J. Green, Richard M. Osgood Jr
View a PDF of the paper titled Extrinsic Photodiodes for Integrated Mid-Infrared Silicon Photonics, by Richard R. Grote and 7 other authors
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Abstract:Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials. Leveraging the dopant-induced sub-bandgap trap-states used in bulk photoconductors for waveguide integrated mid-infrared detectors offers simple processing, integration, and operation throughout the mid-infrared by appropriate choice of dopant. In particular, Si doped with Zn forms two trap levels ~ 0.3 eV and ~ 0.58 eV above the valence band, and has been utilized extensively for cryogenically cooled bulk extrinsic photoconductors. In this letter, we present room temperature operation of Zn+ implanted Si waveguide photodiodes from 2200 nm to 2400 nm, with measured responsivities of up to 87 mA/W and low dark currents of < 10 microamps.
Subjects: Optics (physics.optics)
Cite as: arXiv:1406.6420 [physics.optics]
  (or arXiv:1406.6420v1 [physics.optics] for this version)
  https://doi.org/10.48550/arXiv.1406.6420
arXiv-issued DOI via DataCite

Submission history

From: Richard Grote [view email]
[v1] Wed, 25 Jun 2014 00:10:32 UTC (1,400 KB)
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