-
Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure
Authors:
Igor V. Rozhansky,
Ina V. Kalitukha,
Grigorii S. Dimitriev,
Olga S. Ken,
Mikhail V. Dorokhin,
Boris N. Zvonkov,
Dmitri S. Arteev,
Nikita S. Averkiev,
Vladimir L. Korenev
Abstract:
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurement…
▽ More
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows to resolve the dynamic FM proximity effect on a nanometer scale. The method can be generalized on various systems including rapidly developing 2D van der Waals materials.
△ Less
Submitted 17 April, 2023;
originally announced April 2023.
-
Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids
Authors:
F. C. D. Moraes,
S. Ullah,
M. G. A. Balanta,
F. Iikawa,
Y. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
B. N. Zvonkov,
F. G. G. Hernandez
Abstract:
Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variat…
▽ More
Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variation in the effective magnetic field induced by the dynamical relaxation of the Mn spins. Two processes are observed during electron spin precession: a quasi-instantaneous alignment of the Mn spins with photo-excited holes, followed by a slow alignment of Mn spins with the external transverse magnetic field. The first process leads to an equilibrium state imprinted in the initial precession frequency, which depends on pump power, while the second process promotes a linear frequency increase, with acceleration depending on temperature and external magnetic field. This observation yields new information about exchange process dynamics and on the possibility of constructing spin memories, which can rapidly respond to light while retaining information for a longer period.
△ Less
Submitted 4 February, 2019; v1 submitted 14 November, 2018;
originally announced November 2018.
-
The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer
Authors:
A. V. Kudrin,
O. V. Vikhrova,
Yu. A. Danilov,
M. V. Dorokhin,
I. L. Kalentyeva,
A. A. Konakov,
V. K. Vasiliev,
D. A. Pavlov,
Yu. V. Usov,
B. N. Zvonkov
Abstract:
We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with h…
▽ More
We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with hole transport in the valence band and the channel associated with electron transport in the Mn impurity band) and that the ferromagnetic properties are determined by the electrons localized at the allowed states within the Mn impurity band. The results also help to understand the features of structures with the Mn δ-layer nearby the quantum well.
△ Less
Submitted 2 February, 2019; v1 submitted 20 April, 2018;
originally announced April 2018.
-
Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres
Authors:
M. A. G. Balanta,
M. J. S. P. Brasil,
F. Iikawa,
Udson C. Mendes,
J. A. Brum,
Yu. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
B. N. Zvonkov
Abstract:
We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resol…
▽ More
We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.
△ Less
Submitted 17 April, 2016; v1 submitted 9 November, 2015;
originally announced November 2015.
-
Analysis of homogeneity of 2D electron gas at decreasing of electron density
Authors:
A. A. Sherstobitov,
G. M. Minkov,
A. V. Germanenko,
O. E. Rut,
I. V. Soldatov,
B. N. Zvonkov
Abstract:
We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron density distribution and serial resistance of 2D electron gas are discussed. Simultaneous analysis of gate voltage dependences of capacitance and resistance has…
▽ More
We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron density distribution and serial resistance of 2D electron gas are discussed. Simultaneous analysis of gate voltage dependences of capacitance and resistance has shown that in heavily doped 2D systems the main role in the drop of capacitance at decreasing concentration plays the resistance of 2D gas. It is found that the investigated systems remains homogeneous down to the low temperature conductivity about (10^-2-10^-3)e^2/h.
△ Less
Submitted 21 September, 2010; v1 submitted 1 September, 2010;
originally announced September 2010.
-
Low magnetic field anomaly of the Hall effect in disordered 2D systems: Interplay between weak localization and electron-electron interaction
Authors:
G. M. Minkov,
A. V. Germanenko,
O. E. Rut,
A. A. Sherstobitov,
B. N. Zvonkov
Abstract:
The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the weaker temperature dependence of the conductivity as compared with that predicted by the first-order theory of the quantum corrections to the conductivity. We sh…
▽ More
The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the weaker temperature dependence of the conductivity as compared with that predicted by the first-order theory of the quantum corrections to the conductivity. We show that both effects in strongly disordered systems stem from the second order quantum correction caused by the effect of weak localization on the interaction correction and vice versa. This correction contributes mainly to the diagonal component of the conductivity tensor, it depends on the magnetic field like the weak localization correction and on the temperature like the interaction contribution.
△ Less
Submitted 20 April, 2010;
originally announced April 2010.
-
Structural and transport properties of GaAs/delta<Mn>/GaAs/InxGa1-xAs/GaAs quantum wells
Authors:
B. A. Aronzon,
M. V. Kovalchuk,
E. M. Pashaev,
M. A. Chuev,
V. V. Kvardakov,
I. A. Subbotin,
V. V. Rylkov,
M. A. Pankov,
A. S. Lagutin,
B. N. Zvonkov,
Yu. A. Danilov,
O. V. Vihrova,
A. V. Lashkul,
R. Laiho
Abstract:
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical…
▽ More
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn containing layers. These investigations show absence of Mn atoms inside the QWs. The quality of the structures was also characterized by photoluminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both "metallic" and activated types of conductivity up to ~100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its "intrinsic" mechanism in ferromagnetic systems.
△ Less
Submitted 31 July, 2007;
originally announced August 2007.
-
Renormalization of hole-hole interaction at decreasing Drude conductivity
Authors:
G. M. Minkov,
A. A. Sherstobitov,
A. V. Germanenko,
O. E. Rut,
B. N. Zvonkov
Abstract:
The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor $α_i<1$ in the conventional expression…
▽ More
The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor $α_i<1$ in the conventional expression for the interaction correction.
△ Less
Submitted 22 May, 2007;
originally announced May 2007.
-
Interference induced metallic-like behavior of a two-dimensional hole gas in asymmetric GaAs/In$_{x}$Ga$_{1-x}$As/GaAs quantum well
Authors:
G. M. Minkov,
A. V. Germanenko,
A. A. Sherstobitov,
B. N. Zvonkov
Abstract:
The temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In$_x$Ga$_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed in the structures investigated is quantitatively understandable within the whole temperature range, $T=0.4-20$ K. It is caused by the interference quantum corr…
▽ More
The temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In$_x$Ga$_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed in the structures investigated is quantitatively understandable within the whole temperature range, $T=0.4-20$ K. It is caused by the interference quantum correction at fast spin relaxation for 0.4 K$ < T < 1.5$ K. At higher temperatures, 1.5 K$<T<4$ K, it is due to the interaction quantum correction. Finally, at $T>4-6$ K, the metallic-like behavior is determined by the phonon scattering.
△ Less
Submitted 9 February, 2007;
originally announced February 2007.
-
Giant suppression of the Drude conductivity due to quantum interference in disordered two-dimensional systems
Authors:
G. M. Minkov,
A. V. Germanenko,
O. E. Rut,
A. A. Sherstobitov,
B. N. Zvonkov
Abstract:
Temperature and magnetic field dependences of the conductivity in heavily doped, strongly disordered two-dimensional quantum well structures GaAs/In$_x$Ga$_{1-x}$As/GaAs are investigated within wide conductivity and temperature ranges. Role of the interference in the electron transport is studied in the regimes when the phase breaking length $L_φ$ crosses over the localization length…
▽ More
Temperature and magnetic field dependences of the conductivity in heavily doped, strongly disordered two-dimensional quantum well structures GaAs/In$_x$Ga$_{1-x}$As/GaAs are investigated within wide conductivity and temperature ranges. Role of the interference in the electron transport is studied in the regimes when the phase breaking length $L_φ$ crosses over the localization length $ξ\sim l\exp{(πk_Fl/2)}$ with lowering temperature, where $k_F$ and $l$ are the Fermi quasimomentum and mean free path, respectively. It has been shown that all the experimental data can be understood within framework of simple model of the conductivity over delocalized states. This model differs from the conventional model of the weak localization developed for $k_Fl\gg 1$ and $L_φ\llξ$ by one point: the value of the quantum interference contribution to the conductivity is restricted not only by the phase breaking length $L_φ$ but by the localization length $ξ$ as well. We show that just the quantity $(τ_φ^\ast)^{-1}=τ_φ^{-1}+τ_ξ^{-1}$ rather than $τ_φ^{-1}$, where $τ_φ\propto T^{-1}$ is the dephasing time and $τ_ξ\simτ\exp(πk_F l)$, is responsible for the temperature and magnetic field dependences of the conductivity over the wide range of temperature and disorder strength down to the conductivity of order $10^{-2} e^2/h$.
△ Less
Submitted 22 June, 2006;
originally announced June 2006.
-
Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition
Authors:
Yu. G. Arapov,
S. V. Gudina,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
M. V. Yakunin,
S. M. Podgornyh,
E. A. Uskova,
B. N. Zvonkov
Abstract:
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0…
▽ More
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0 2D metal--insulator transition. We show that the observed localization and Landau quantization is due to the Sigma_xy(T)anomalous T-dependence.
△ Less
Submitted 28 December, 2005;
originally announced December 2005.
-
Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas
Authors:
G. M. Minkov,
A. A. Sherstobitov,
A. V. Germanenko,
O. E. Rut,
V. A. Larionova,
A. K. Bakarov,
B. N. Zvonkov
Abstract:
The results of an experimental study of interaction quantum correction to the conductivity of two-dimensional electron gas in A$_3$B$_5$ semiconductor quantum well heterostructures are presented for a wide range of $Tτ$-parameter ($Tτ\simeq 0.03-0.8$), where $τ$ is the transport relaxation time. A comprehensive analysis of the magnetic field and temperature dependences of the resistivity and the…
▽ More
The results of an experimental study of interaction quantum correction to the conductivity of two-dimensional electron gas in A$_3$B$_5$ semiconductor quantum well heterostructures are presented for a wide range of $Tτ$-parameter ($Tτ\simeq 0.03-0.8$), where $τ$ is the transport relaxation time. A comprehensive analysis of the magnetic field and temperature dependences of the resistivity and the conductivity tensor components allows us to separate the ballistic and diffusion parts of the correction. It is shown that the ballistic part renormalizes in the main the electron mobility, whereas the diffusion part contributes to the diagonal and does not to the off-diagonal component of the conductivity tensor. We have experimentally found the values of the Fermi-liquid parameters describing the electron-electron contribution to the transport coefficients, which are found in a good agreement with the theoretical results.
△ Less
Submitted 14 December, 2005; v1 submitted 5 December, 2005;
originally announced December 2005.
-
Hole-hole interaction in a strained In$_x$Ga$_{1-x}$As two dimensional system
Authors:
G. M. Minkov,
A. A. Sherstobitov,
A. V. Germanenko,
O. E. Rut,
V. A. Larionova,
B. N. Zvonkov
Abstract:
The interaction correction to the conductivity of 2D hole gas in strained GaAs/In$_x$Ga$_{1-x}$As/GaAs quantum well structures was studied. It is shown that the Zeeman splitting, spin relaxation and ballistic contribution should be taking into account for reliable determination of the Fermi-liquid constant $F_0^σ$. The proper consideration of these effects allows us to describe both th temperatu…
▽ More
The interaction correction to the conductivity of 2D hole gas in strained GaAs/In$_x$Ga$_{1-x}$As/GaAs quantum well structures was studied. It is shown that the Zeeman splitting, spin relaxation and ballistic contribution should be taking into account for reliable determination of the Fermi-liquid constant $F_0^σ$. The proper consideration of these effects allows us to describe both th temperature and magnetic field dependences of the conductivity and find the value of $F_0^σ$.
△ Less
Submitted 23 March, 2005;
originally announced March 2005.
-
Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures
Authors:
G. M. Minkov,
A. A. Sherstobitov,
A. V. Germanenko,
O. E. Rut,
V. A. Larionova,
B. N. Zvonkov
Abstract:
Low-field magnetoresistance in p-type strained quantum wells is studied. It is shown that the Rashba mechanism leads to the cubic in quasimomentum spin-orbit splitting of the hole energy spectrum and the antilocalization behavior of low-field magnetoresistance is well described by the Hikami-Larkin-Nagaoka expression.
Low-field magnetoresistance in p-type strained quantum wells is studied. It is shown that the Rashba mechanism leads to the cubic in quasimomentum spin-orbit splitting of the hole energy spectrum and the antilocalization behavior of low-field magnetoresistance is well described by the Hikami-Larkin-Nagaoka expression.
△ Less
Submitted 14 September, 2004;
originally announced September 2004.
-
Weak antilocalization in quantum wells in tilted magnetic fields
Authors:
G. M. Minkov,
A. V. Germanenko,
O. E. Rut,
A. A. Sherstobitov,
L. E. Golub,
B. N. Zvonkov,
M. Willander
Abstract:
Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are found as functions of temperature and parallel field. It is demonstrated that spin dephasing is due to the Dresselhaus spin-orbit interaction. The values of elect…
▽ More
Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are found as functions of temperature and parallel field. It is demonstrated that spin dephasing is due to the Dresselhaus spin-orbit interaction. The values of electron spin splittings and spin relaxation times are found in the wide range of 2D density. Application of in-plane field is shown to destroy weak antilocalization due to competition of Zeeman and microroughness effects. Their relative contributions are separated, and the values of the in-plane electron g-factor and characteristic size of interface imperfections are found.
△ Less
Submitted 2 December, 2003;
originally announced December 2003.
-
Antilocalization in gated 2D quantum well structures with composition gradient
Authors:
A. V. Germanenko,
G. M. Minkov,
O. E. Rut,
A. A. Sherstobitov,
B. N. Zvonkov
Abstract:
Low-field magnetoconductivity caused by the quantum interference is studied in the gated 2D quantum well structures with the composition gradient. It is shown that the Dresselhaus mechanism well describes an antilocalization minimum on the conductivity-magnetic field curve.
Low-field magnetoconductivity caused by the quantum interference is studied in the gated 2D quantum well structures with the composition gradient. It is shown that the Dresselhaus mechanism well describes an antilocalization minimum on the conductivity-magnetic field curve.
△ Less
Submitted 11 November, 2003;
originally announced November 2003.
-
Transverse negative magnetoresistance of 2D structures in the presence of strong in-plane magnetic field: weak localization as a probe of interface roughness
Authors:
G. M. Minkov,
O. E. Rut,
A. V. Germanenko,
A. A. Sherstobitov,
B. N. Zvonkov,
D. O. Filatov
Abstract:
The interference induced transverse negative magnetoresistance of GaAs/InGaAs/GaAs quantum well heterostructures has been studied in the presence of strong in-plane magnetic field. It is shown that effect of in-plane magnetic field is determined by the interface roughness and strongly depends on the relationship between mean free path, phase breaking length and roughness correlation length. Anal…
▽ More
The interference induced transverse negative magnetoresistance of GaAs/InGaAs/GaAs quantum well heterostructures has been studied in the presence of strong in-plane magnetic field. It is shown that effect of in-plane magnetic field is determined by the interface roughness and strongly depends on the relationship between mean free path, phase breaking length and roughness correlation length. Analysis of the experimental results allows us to estimate parameters of short- and long-range correlated roughness which have been found in a good agreement with atomic force microscopy data obtained for just the same samples.
△ Less
Submitted 6 November, 2003;
originally announced November 2003.
-
New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime
Authors:
L. A. Ponomarenko,
D. T. N. de Lang,
A. de Visser,
D. Maude,
B. N. Zvonkov,
R. A. Lunin,
A. M. M. Pruisken
Abstract:
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP h…
▽ More
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.
△ Less
Submitted 19 August, 2003;
originally announced August 2003.
-
Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes
Authors:
M. V. Yakunin,
G. A. Alshanskii,
Yu. G. Arapov,
G. I. Harus,
V. N. Neverov,
N. G. Shelushinina,
O. A. Kuznetsov,
B. N. Zvonkov,
E. A. Uskova,
L. Ponomarenko,
A. de Visser
Abstract:
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglect…
▽ More
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglected in the GaAs/AlGaAs heterostructures, for which solely the effects of this nature have been observed so far. In Ge/p-Ge_{1-x}Si_x DQWs containing a hole gas, local MR peculiarities under parallel fields are discovered as well. But the tunnel gap in these DQWs is too narrow to be responsible for these observations. We suppose, they are due to a complicated shape of the hole confinement subbands.
△ Less
Submitted 6 June, 2003;
originally announced June 2003.
-
Electron-electron interaction at decreasing $k_Fl$
Authors:
G. M. Minkov,
O. E. Rut,
A. V. Germanenko,
A. A. Sherstobitov,
V. I. Shashkin,
O. I. Khrykin,
B. N. Zvonkov
Abstract:
The contribution of the electron-electron interaction to conductivity is analyzed step by step in gated GaAs/InGaAs/GaAs heterostructures with different starting disorder. We demonstrate that the diffusion theory works down to $k_F l\simeq 1.5-2$, where $k_F$ is the Fermi quasimomentum, $l$ is the mean free paths. It is shown that the e-e interaction gives smaller contribution to the conductivit…
▽ More
The contribution of the electron-electron interaction to conductivity is analyzed step by step in gated GaAs/InGaAs/GaAs heterostructures with different starting disorder. We demonstrate that the diffusion theory works down to $k_F l\simeq 1.5-2$, where $k_F$ is the Fermi quasimomentum, $l$ is the mean free paths. It is shown that the e-e interaction gives smaller contribution to the conductivity than the interference independent of the starting disorder and its role rapidly decreases with $k_Fl$ decrease.
△ Less
Submitted 25 September, 2002;
originally announced September 2002.
-
Quantum corrections to conductivity: from weak to strong localization
Authors:
G. M. Minkov,
O. E. Rut,
A. V. Germanenko,
A. A. Sherstobitov,
B. N. Zvonkov,
E. A. Uskova,
A. A. Birukov
Abstract:
Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the conductivity is diffusive for $k_F l=25-2$ and behaves like diffusive one for $k_F l=2-0.5$ down to the temperature T=0.4 K. It has been therewith found that the…
▽ More
Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the conductivity is diffusive for $k_F l=25-2$ and behaves like diffusive one for $k_F l=2-0.5$ down to the temperature T=0.4 K. It has been therewith found that the quantum corrections are not small at low temperature when $k_F l\simeq 1$. They are close in magnitude to the Drude conductivity so that the conductivity $σ$ becomes significantly less than $e^{2}/h$ (the minimal $σ$ value achieved in our experiment is about $3\times 10^{-8}Ω^{-1}$ at $k_Fl\simeq 0.5$ and $T=0.46$ K). We conclude that the temperature and magnetic field dependences of conductivity in whole $k_Fl$ range are due to changes of quantum corrections.
△ Less
Submitted 30 November, 2001; v1 submitted 28 November, 2001;
originally announced November 2001.
-
Role of doped layers in dephasing of 2D electrons in quantum well structures
Authors:
G. M. Minkov,
A. V. Germanenko,
O. E. Rut,
A. A. Sherstobitov,
B. N. Zvonkov,
E. A. Uskova,
A. A. Birukov
Abstract:
The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in quantum well and to saturation of the phase breaking time at low temperature.
The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in quantum well and to saturation of the phase breaking time at low temperature.
△ Less
Submitted 4 June, 2001;
originally announced June 2001.
