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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1511.02881 (cond-mat)
[Submitted on 9 Nov 2015 (v1), last revised 17 Apr 2016 (this version, v2)]

Title:Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres

Authors:M. A. G. Balanta, M. J. S. P. Brasil, F. Iikawa, Udson C. Mendes, J. A. Brum, Yu. A. Danilov, M. V. Dorokhin, O. V. Vikhrova, B. N. Zvonkov
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Abstract:We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.
Comments: 12 pages, 5 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1511.02881 [cond-mat.mes-hall]
  (or arXiv:1511.02881v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1511.02881
Journal reference: Sci. Rep. 6, 24537 (2016)
Related DOI: https://doi.org/10.1038/srep24537

Submission history

From: Udson C. Mendes [view email]
[v1] Mon, 9 Nov 2015 21:01:52 UTC (624 KB)
[v2] Sun, 17 Apr 2016 15:35:34 UTC (347 KB)
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