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Real-space titration and manipulation of particle-like correlated electrons in doped Mott insulator
Authors:
Yanyan Geng,
Haoyu Dong,
Renhong Wang,
Zilu Wang,
Jianfeng Guo,
Shuo Mi,
Yan Li,
Fei Pang,
Rui Xu,
Li Huang,
Hong-Jun Gao,
Wei Ji,
Shancai Wang,
Weichang Zhou,
Zhihai Cheng
Abstract:
The localized (particle-like) correlated electrons deserve particular attention as they govern various exotic quantum phenomena, such as quantum spin liquids, Wigner crystals, and Mott insulators in correlated systems. However, direct observation and manipulation of these particle-like electrons at the atomic or single-electron scale remain highly challenging. Here, we successfully realize and dir…
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The localized (particle-like) correlated electrons deserve particular attention as they govern various exotic quantum phenomena, such as quantum spin liquids, Wigner crystals, and Mott insulators in correlated systems. However, direct observation and manipulation of these particle-like electrons at the atomic or single-electron scale remain highly challenging. Here, we successfully realize and directly visualize particle-like correlated electrons in 1T-TaS2 through hole doping. The potential-dependent local electronic structure of single particle-like electron is revealed by angle-resolved photoemission spectroscopy (ARPES), scanning tunneling spectroscopy (STS) combined with theoretical calculations. The complex correlated interactions including nearest-neighbor attractive interactions and many-body repulsive interactions are further demonstrated and discussed based on the spatial distribution of particle-like electrons. Furthermore, the tentative manipulation of the particle-like electrons is successfully achieved by the energy-excitation mechanism. Our results not only provide profound insights into particle-like electrons in correlated systems, but also establish a versatile platform for designing and controlling quantum states at the atomic scale.
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Submitted 8 July, 2025;
originally announced July 2025.
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Designer Heavy Fermions in Incommensurate $\bf{Nb_3Cl_8}$/Graphene van der Waals Heterostructures
Authors:
Yuchen Gao,
Wenjie Zhou,
Fan Yang,
Zhijie Ma,
Hansheng Xu,
Xinyue Huang,
Kenji Watanabe,
Takashi Taniguchi,
Youguo Shi,
Yu Ye
Abstract:
Heavy fermion systems, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena. Here, we introduce a general strategy for engineering heavy fermions in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb$_3$Cl$_8$) with itinerant electrons (from monolayer graphene), circumventing strict…
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Heavy fermion systems, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena. Here, we introduce a general strategy for engineering heavy fermions in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb$_3$Cl$_8$) with itinerant electrons (from monolayer graphene), circumventing strict lattice-matching requirements. Through magnetotransport and slave spin mean-field calculations, we demonstrate the hybridization gap ($Δ\approx30$ meV), gate-tunable metal-insulator transition, and band-selective electron effective mass enhancement, hallmarks of Kondo coherence. The heterostructure exhibits nearly order-of-magnitude electron effective mass dichotomy between hybridized and conventional graphene-like regimes, alongside in-plane magnetic field-induced metal-insulator transitions. Top gate-temperature phase mapping reveals competing correlated states, including insulating and hidden-order phases. This work establishes a scalable platform for designing heavy fermion by replacing the itinerant electron materials, with implications for engineering topological superconductivity and quantum criticality in low-dimensional systems.
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Submitted 26 June, 2025;
originally announced June 2025.
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Universal band center model for the HER activity of non-metal site
Authors:
Ruixin Xu,
Shiqian Cao,
Tingting Bo,
Yanyu Liu,
Wei Zhou
Abstract:
In this work, the hydrogen evolution reaction activities of non-metal sites in the transition metal dichalcogenides with the stoichiometry of MX2 are investigated using the first principles calculations. The trained machine learning model demonstrates that the pz band center, bandgap, and period effect are the key factors influencing the HER activity of MX2. Furthermore, it also reveals that the o…
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In this work, the hydrogen evolution reaction activities of non-metal sites in the transition metal dichalcogenides with the stoichiometry of MX2 are investigated using the first principles calculations. The trained machine learning model demonstrates that the pz band center, bandgap, and period effect are the key factors influencing the HER activity of MX2. Furthermore, it also reveals that the observed non-scaling law between the pz band center and HER activity in the semiconductor-like materials originates from the bandgap-induced downshift of bonding and antibonding states. In addition to the bandgap, the intrinsic p orbital energy level of the non-metal atoms also contributes to the periodic variation of pz band center. Extended calculations indicate that the descriptor is equally applicable to the other catalysts, suggesting its universality in predicting the HER activity of non-metal sites.
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Submitted 3 June, 2025;
originally announced June 2025.
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No-drift phase-change memory alloy for neuromorphic computing
Authors:
Xiaozhe Wang,
Ruobing Wang,
Suyang Sun,
Ding Xu,
Chao Nie,
Zhou Zhou,
Chenyu Wen,
Junying Zhang,
Ruixuan Chu,
Xueyang Shen,
Wen Zhou,
Zhitang Song,
Jiang-Jing Wang,
En Ma,
Wei Zhang
Abstract:
Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials (PCMs), the resultant temporal change in electrical resistance seriously hamper in-memory computing (IMC) applications. Here, we report an ab-initio-calculation-informed design of amorphous PCM composed of robust "molecule-like" motifs with minimal Peierls distortion, depri…
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Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials (PCMs), the resultant temporal change in electrical resistance seriously hamper in-memory computing (IMC) applications. Here, we report an ab-initio-calculation-informed design of amorphous PCM composed of robust "molecule-like" motifs with minimal Peierls distortion, depriving the amorphous alloy of structural ingredients that would gradually evolve upon aging to entail resistance drift. We demonstrate amorphous CrTe3 thin films that display practically no resistance drift at any working temperature from -200 to 165 degree C. We achieve multilevel programming of CrTe3 through both step-wise crystallization and step-wise amorphization using a hybrid opto-electronic device at various temperatures. Moreover, the application potential of CrTe3 in neuromorphic computing is testified by its incorporation in a vehicle with automatic path-tracking function. Our work opens a new avenue to achieving IMC-requisite properties via judicious design of the composition and atomic-level structure of disordered PCM alloys.
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Submitted 27 March, 2025;
originally announced March 2025.
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Charge-polarized superconducting state emerged in a superatomic antipolar metal
Authors:
Shuya Xing,
Zhongxu Wei,
Xu Chen,
Junming Zhang,
Zhenyu Yuan,
Jiali Zhao,
Feng Jin,
Tao Sun,
Huifen Ren,
Minjie Cui,
Hong Chang,
Tianping Ying,
Jiangang Guo,
Xiaolong Chen,
Shifeng Zhao,
Wenping Zhou,
Xinqi Li,
Tian Qian,
Wei Ji,
Zhihai Cheng
Abstract:
Symmetry-defined order states play essential roles in determining the emergent exotic physical properties in condensed matter physics, including charge density wave (CDW), polar charge order, and superconducting (SC) states. Recently, the interweaved CDW and antipolar states have been discovered in a low-symmetric superatomic crystal of (Au6Te12Se8, ATS), while their delicate interplay with the fo…
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Symmetry-defined order states play essential roles in determining the emergent exotic physical properties in condensed matter physics, including charge density wave (CDW), polar charge order, and superconducting (SC) states. Recently, the interweaved CDW and antipolar states have been discovered in a low-symmetric superatomic crystal of (Au6Te12Se8, ATS), while their delicate interplay with the following emergent SC state at lower temperature remains elusive. Here, we report a real-space experimental investigation on the coexistence and competition of CDW, polar and SC states in the metallic crystal of ATS using scanning tunneling microscopy/spectroscopy combined with transport and Raman measurements. We show that the CDW order is gradually suppressed with the decreased temperature, and a further transformation from antipolar to ferrielectric-like order occurs with the inversion-symmetric broken at the SC state. These spatially observed the emergence and competition of the above ordered states coincide with the temperature-dependent transport and Raman measurements. We predict that the delicate interplay among these states may contribute exotic "hidden" orders in this superatomic metal, suggesting a unique platform for the exploration of intriguing quantum materials.
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Submitted 8 April, 2025; v1 submitted 12 March, 2025;
originally announced March 2025.
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Pressure-driven superconductivity in the topological insulator GeBi4Te7
Authors:
Yalei Huang,
Na Zuo,
Zheyi Zhang,
Chunqiang Xu,
Xiangzhuo Xing,
Wen-He Jiao,
Bin Li,
Wei Zhou,
Xiaobing Liu,
Dong Qian,
Xiaofeng Xu
Abstract:
The van der Waals, pseudo-binary chalcogenides (ACh)m(Pn2Ch3)n (A = Ge, Mn, Pb, etc.; Pn = Sb or Bi; Ch = Te, Se) have recently been reported to host a vast landscape of topological phases of matter, including the quantum anomalous Hall state and topological axion state with quantized magnetoelectric effect. A subgroup in this series, like MnSb4Te7 and GeSb4Te7, can be driven to a superconducting…
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The van der Waals, pseudo-binary chalcogenides (ACh)m(Pn2Ch3)n (A = Ge, Mn, Pb, etc.; Pn = Sb or Bi; Ch = Te, Se) have recently been reported to host a vast landscape of topological phases of matter, including the quantum anomalous Hall state and topological axion state with quantized magnetoelectric effect. A subgroup in this series, like MnSb4Te7 and GeSb4Te7, can be driven to a superconducting state by applying a physical pressure, making them viable candidates to realize so-called topological superconductivity. However, the role of magnetic fluctuations in this pressure-induced superconductivity remains unclear. Here, we report the pressure-induced multiple superconducting phases in the nonmagnetic GeBi4Te7, accompanied by corresponding structural transitions evidenced from the high-pressure Raman scattering. In comparison with other members in this family, we find the superconducting transition temperature of the nonmagnetic subgroup is significantly higher than their magnetic homologues, possibly hinting at the detrimental role played by the magnetic fluctuations in the superconductivity formation, at least in this pseudo-binary chalcogenide family.
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Submitted 5 March, 2025;
originally announced March 2025.
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Structural and Dynamical Behaviors of Fast Ionic Conducting Potassium nido-(Carba)borates
Authors:
Mads B. Amdisen,
Hui Wu,
Mikael S. Andersson,
Mirjana Dimitrievska,
Wei Zhou,
Torben R. Jensen,
Craig M. Brown,
Juscelino B. Leão,
Terrence J. Udovic
Abstract:
Solid-state batteries are one of the most recent iterations of electrochemical energy storage, and the technology can potentially provide safer and more-energy-dense batteries. The metal closo- and nido-(carba)borates show promise as versatile solid electrolytes and have been shown to have some of the highest ionic conductivities as well as wide electrochemical stability windows. In the present st…
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Solid-state batteries are one of the most recent iterations of electrochemical energy storage, and the technology can potentially provide safer and more-energy-dense batteries. The metal closo- and nido-(carba)borates show promise as versatile solid electrolytes and have been shown to have some of the highest ionic conductivities as well as wide electrochemical stability windows. In the present study, we investigate the four potassium nido-(carba)borates KB$_{11}$H$_{14}$, K-7-CB$_{10}$H$_{13}$, K-7,8-C$_2$B$_9$H$_{12}$, and K-7,9-C$_2$B$_9$H$_{12}$, and a total of eight new crystal structures were solved. All four compounds transition from a low-temperature, ordered phase to a high-temperature, disordered phase with the space group Fm-3m. In the high-temperature polymorphs, the anions are disordered and undergo rapid reorientational dynamics, which is confirmed by quasielastic neutron scattering experiments. Reorientational activation energies of 0.151(2) eV, 0.146(32) eV, and 0.143(3) eV were determined for K-7-CB$_{10}$H$_{13}$, K-7,8-C$_2$B$_9$H$_{12}$, and K-7,9-C$_2$B$_9$H$_{12}$, respectively. Additionally, such rotationally fluid anions are concomitant with fast potassium-ion conductivity. The highest ionic conductivity is observed for K-7,8-C$_2$B$_9$H$_{12}$ with 1.7$\times$10$^{-2}$ Scm$^{-1}$ at 500 K and an activation energy of 0.28 eV in the disordered state. The differences in phase transition temperatures, reorientational dynamics, and ionic conductivities between the potassium nido-(carba)borates illustrate a strong correlation between the K$^+$ cationic mobility and the local cation-anion interactions, anion dynamics, and the specific positions of the carbon-atoms in the nido-(carba)borate anion cages.
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Submitted 4 March, 2025;
originally announced March 2025.
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Continuously tunable anomalous Hall crystals in rhombohedral heptalayer graphene
Authors:
Hanxiao Xiang,
Jing Ding,
Jiannan Hua,
Naitian Liu,
Wenqiang Zhou,
Qianmei Chen,
Kenji Watanabe,
Takashi Taniguchi,
Na Xin,
Wei Zhu,
Shuigang Xu
Abstract:
The interplay of electronic interactions and nontrivial topology can give rise to a wealth of exotic quantum states. A notable example is the formation of Wigner crystals driven by strong electron-electron interactions. When these electronic crystals emerge in a parent band carrying a large Berry curvature, they can exhibit topologically nontrivial properties as anomalous Hall crystals, spontaneou…
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The interplay of electronic interactions and nontrivial topology can give rise to a wealth of exotic quantum states. A notable example is the formation of Wigner crystals driven by strong electron-electron interactions. When these electronic crystals emerge in a parent band carrying a large Berry curvature, they can exhibit topologically nontrivial properties as anomalous Hall crystals, spontaneously breaking both continuous translational symmetry and time-reversal symmetry. Here, we report the experimental observation of tunable anomalous Hall crystals in rhombohedral heptalayer graphene moiré superlattices. At filling factors near one electron per moiré unit cell (v=1), we identify a series of incommensurate Chern insulators with a Chern number of C=1. Furthermore, we observe spontaneous time-reversal symmetry breaking spanning the entire filling range from v=1 to v=2, manifesting as anomalous Hall effects with pronounced magnetic hysteresis. Notably, anomalous Hall crystals with a high Chern number C=3 are observed over generic fillings ranging from v=1.5 to v=2. These anomalous Hall crystals are incommensurate with the moiré superlattice and exhibit dispersive fan diagrams consistent with the Streda formula, with their positions continuously tunable through displacement fields. Remarkably, these partially filled Chern insulators display Chern numbers distinct from their parent bands. Our findings demonstrate the rich variety of electronic crystalline states in rhombohedral graphene moiré superlattices, offering valuable insights into the strongly correlated topological phases.
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Submitted 25 February, 2025;
originally announced February 2025.
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Full-film dry transfer of MBE-grown van der Waals materials
Authors:
Ziling Li,
Wenyi Zhou,
Matthew Swann,
Vika Vorona,
Haley Scott,
Roland K. Kawakami
Abstract:
Molecular beam epitaxy (MBE) has been used to create high-quality, large-scale two-dimensional van der Waals (2D vdW) materials. However, due to the strong adhesion between the substrate and deposited materials, the peel-off and dry transfer of MBE-grown vdW films onto other substrates has been challenging. This limits the study and use of MBE films for heterogeneous integration including stacked…
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Molecular beam epitaxy (MBE) has been used to create high-quality, large-scale two-dimensional van der Waals (2D vdW) materials. However, due to the strong adhesion between the substrate and deposited materials, the peel-off and dry transfer of MBE-grown vdW films onto other substrates has been challenging. This limits the study and use of MBE films for heterogeneous integration including stacked and twisted heterostructures. In this work, we develop a polymer-assisted dry transfer method and successfully perform full-film transfer of various MBE-grown 2D vdW materials including transition metal dichalcogenides (TMD), topological insulators (TI) and 2D magnets. In particular, we transfer air-sensitive 2D magnets, characterize their magnetic properties, and compare them with as-grown materials. The results show that the transfer technique does not degrade the magnetic properties, with the Curie temperature and hysteresis loops exhibiting similar behaviors after the transfer. Our results enable further development of heterogeneous integration of 2D vdW materials based on MBE growth.
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Submitted 22 February, 2025;
originally announced February 2025.
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Abnormal Normal State and Pressure-driven Reentrant Superconductivity in the Heavy $d$-electron Superconductor Rh$_{17}$S$_{15}$
Authors:
Xiaofeng Xu,
J. Y. Nie,
C. Q. Xu,
Z. M. Zhu,
Xiangzhuo Xing,
Y. L. Huang,
C. T. Zhang,
N. Zuo,
C. C. Zhao,
Z. Y. Zhang,
W. Zhou,
W. H. Jiao,
S. Xu,
Q. Zhang,
Zhu-An Xu,
X. B. Liu,
Dong Qian,
Shiyan Li
Abstract:
Superconductivity beyond the conventional Bardeen-Cooper-Schrieffer (BCS) framework often emerges out of a normal state that is accompanied by exotic magnetism and thereby displays many exceptional transport and thermodynamic properties. Here we report that the normal state of the heavy $d$-electron superconductor Rh$_{17}$S$_{15}$ is characterized by a weak \textit{ferromagnetism} that persists u…
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Superconductivity beyond the conventional Bardeen-Cooper-Schrieffer (BCS) framework often emerges out of a normal state that is accompanied by exotic magnetism and thereby displays many exceptional transport and thermodynamic properties. Here we report that the normal state of the heavy $d$-electron superconductor Rh$_{17}$S$_{15}$ is characterized by a weak \textit{ferromagnetism} that persists up to room temperature. We show that the broad hump in its resistivity likely results from the Kondo interaction of the conduction electrons with this novel magnetism. By applying pressure, superconductivity is fully suppressed first. In the high-pressure regime, however, we observe a second dome of superconductivity with its maximum $T_c$ greater than the ambient pressure value, highlighting the possible \textit{unconventional} superconductivity in this heavy $d$-electron sulfide.
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Submitted 17 February, 2025;
originally announced February 2025.
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Itinerant topological magnons and spin excitons in twisted transition metal dichalcogenides: Mapping electron topology to spin counterpart
Authors:
Wei-Tao Zhou,
Zhao-Yang Dong,
Zhao-Long Gu,
Jian-Xin Li
Abstract:
Twisted transition metal dichalcogenides (tTMDs) provide a highly tunable platform to explore the interplay between strong correlation and topology. Among them, the properties involving the charge degree of freedom have been extensively studied, while those related to spin are much less investigated. Motivated by the recent discovery of integer and fractional quantum anomalous Hall effects in tMoT…
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Twisted transition metal dichalcogenides (tTMDs) provide a highly tunable platform to explore the interplay between strong correlation and topology. Among them, the properties involving the charge degree of freedom have been extensively studied, while those related to spin are much less investigated. Motivated by the recent discovery of integer and fractional quantum anomalous Hall effects in tMoTe$_2$, where the flat-band ferromagnetism is one of the essential prerequisites, we investigate theoretically the spin excitations out of the flat-band ferromagnetic ground state in tMoTe$_2$. Remarkably, we identify the itinerant magnons and spin excitons with nontrivial topology. We elaborate that the topology of these itinerant spin excitations, which are described as particle-hole bound states, inherits directly from that of the underlying electrons and is essentially different from that in local spin systems. Thus, we establish a direct relationship of the topology between the many-body excitations and their fundamental constituents. We further demonstrate that by tuning the displacement field, a topological transition for both the magnon and spin exciton happens, leading to a step-like change and bifurcation in the thermal Hall conductance, which could serve as unique and compelling evidence to be tested experimentally.
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Submitted 15 February, 2025;
originally announced February 2025.
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Integrating Deep-Learning-Based Magnetic Model and Non-Collinear Spin-Constrained Method: Methodology, Implementation and Application
Authors:
Daye Zheng,
Xingliang Peng,
Yike Huang,
Yinan Wang,
Duo Zhang,
Zhengtao Huang,
Linfeng Zhang,
Mohan Chen,
Ben Xu,
Weiqing Zhou
Abstract:
We propose a non-collinear spin-constrained method that generates training data for deep-learning-based magnetic model, which provides a powerful tool for studying complex magnetic phenomena at the atomic scale. First, we propose a projection method for atomic magnetic moments by applying a radial truncation to the numerical atomic orbitals. We then implement a Lagrange multiplier method that can…
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We propose a non-collinear spin-constrained method that generates training data for deep-learning-based magnetic model, which provides a powerful tool for studying complex magnetic phenomena at the atomic scale. First, we propose a projection method for atomic magnetic moments by applying a radial truncation to the numerical atomic orbitals. We then implement a Lagrange multiplier method that can yield the magnetic torques of atoms by constraining the magnitude and direction of atomic magnetic moments. The method is implemented in ABACUS with both plane wave basis and numerical atomic orbital basis. We benchmark the iron (Fe) systems with the new method and analyze differences from calculations with the plane wave basis and numerical atomic orbitals basis in describing magnetic energy barriers. Based on more than 30,000 first-principles data with the information of magnetic torque, we train a deep-learning-based magnetic model DeePSPIN for the Fe system. By utilizing the model in large-scale molecular dynamics simulations, we successfully predict Curie temperatures of $α$-Fe close to experimental values.
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Submitted 24 February, 2025; v1 submitted 24 January, 2025;
originally announced January 2025.
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Electron transport properties of heterogeneous interfaces in solid electrolyte interphase on lithium metal anodes
Authors:
Xiangyi Zhou,
Rongzhi Gao,
Ziyang Hu,
Weijun Zhou,
YanHo Kwok,
GuanHua Chen
Abstract:
In rechargeable batteries, electron transport properties of inorganics in the solid-electrolyte interphase (SEI) critically determine the safety, lifespan and capacity loss of batteries. However, the electron transport properties of heterogeneous interfaces among different solid inorganics in SEI have not been studied experimentally or theoretically yet, although such heterogeneous interfaces exis…
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In rechargeable batteries, electron transport properties of inorganics in the solid-electrolyte interphase (SEI) critically determine the safety, lifespan and capacity loss of batteries. However, the electron transport properties of heterogeneous interfaces among different solid inorganics in SEI have not been studied experimentally or theoretically yet, although such heterogeneous interfaces exist inevitably. Here, by employing non-equilibrium Green's function (NEGF) method, we theoretically evaluated the atomic-scale electron transport properties under bias voltage for LiF/Li2O interfaces and single-component layers of them, since LiF and Li2O are common stable inorganics in the SEI. We reveal that heterogeneous interfaces orthogonal to the external electric-field direction greatly impede electron transport in SEI, whereas heterogeneous parallel-orientated interfaces enhance it. Structural disorders induced by densely distributed interfaces can severely interfere with electron transport. For each component, single-crystal LiF is highly effective to block electron transport, with a critical thickness of 2.9 nm, much smaller than that of Li2O (19.0 nm). This study sheds a new light into direct and quantitative understanding of the electron transport properties of heterogeneous interfaces in SEI, which holds promise for the advancement of a new generation of high-performance batteries.
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Submitted 22 January, 2025;
originally announced January 2025.
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Ultrahigh interfacial thermal conductance for cooling gallium oxide electronics using cubic boron arsenide
Authors:
Wenjiang Zhou,
Nianjie Liang,
Wei Xiao,
Zhaofei Tong,
Fei Tian,
Bai Song
Abstract:
Gallium oxide (Ga$_2$O$_3$) has attracted significant interest for its unique potential especially in power electronics. However, its low and anisotropic thermal conductivity poses a major challenge for heat dissipation. Here, we explore an effective cooling strategy centering on the heterogeneous integration of $β$-Ga$_2$O$_3$ devices with cubic boron arsenide (cBAs), an emerging material with an…
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Gallium oxide (Ga$_2$O$_3$) has attracted significant interest for its unique potential especially in power electronics. However, its low and anisotropic thermal conductivity poses a major challenge for heat dissipation. Here, we explore an effective cooling strategy centering on the heterogeneous integration of $β$-Ga$_2$O$_3$ devices with cubic boron arsenide (cBAs), an emerging material with an ultrahigh thermal conductivity $κ$ of ~1300 Wm$^{-1}$K$^{-1}$. Machine-learned potentials for representative $β$-Ga$_2$O$_3$/cBAs interfaces are trained, enabling accurate and efficient calculation of the interfacial thermal conductance $G$ via nonequilibrium molecular dynamics. At 300 K, remarkable $G$ values of 749$\pm$33 MWm$^{-2}$K$^{-1}$ and 824$\pm$35 MWm$^{-2}$K$^{-1}$ are predicted for Ga-As and O-B bonding across the interface, respectively, which are primarily attributed to the well-matched phonon density of states considering the similar Debye temperatures of $β$-Ga$_2$O$_3$ and cBAs. Moreover, finite-element simulations directly show a notable device temperature reduction when comparing cBAs with other substrates. The simultaneously ultrahigh $κ$ and $G$ highlight cBAs as an ideal substrate for Ga$_2$O$_3$ electronics.
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Submitted 11 February, 2025; v1 submitted 19 January, 2025;
originally announced January 2025.
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Two-dimensional ferroelectric crystal with temperature-invariant ultralow thermal conductivity
Authors:
Wenjie Zhou,
Shi Liu
Abstract:
We report the discovery of temperature-invariant ultralow thermal conductivity ($κ$) in monolayer $β'$-In$_2$Se$_3$, a two-dimensional ferroelectric crystal with in-plane polarization. Using a combination of generalized Wigner transport equation theory and machine-learning-assisted molecular dynamics simulations, we reveal that the balance between particle-like phonon propagating and wave-like tun…
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We report the discovery of temperature-invariant ultralow thermal conductivity ($κ$) in monolayer $β'$-In$_2$Se$_3$, a two-dimensional ferroelectric crystal with in-plane polarization. Using a combination of generalized Wigner transport equation theory and machine-learning-assisted molecular dynamics simulations, we reveal that the balance between particle-like phonon propagating and wave-like tunneling transport mechanisms results in a propagating-tunneling-invariant (PTI) ultralow thermal conductivity of approximately 0.6 W/mK (comparable to that of glass) over a broad temperature range ($150<T<800$~K). This behavior stems from intrinsic strong lattice anharmonicity driven by ferroelectric dipolar fluctuations, eliminating the need for extrinsic structural modifications. In contrast, the $α$-In$_2$Se$_3$~monolayer, which shares the same stoichiometry, exhibits a conventional temperature-dependent thermal conductivity, $κ(T) \propto T^{-1}$, typical of simple crystals. Furthermore, we demonstrate that the anharmonicity in $β'$-In$_2$Se$_3$~can be precisely modulated by an external electric field, enabling on-demand control of thermal transport properties, including modifying the temperature scaling behavior of heat conductivity and achieving a large thermal switching ratio of $\approx$2.5. These findings provide fundamental insights into the interplay between field-tunable lattice anharmonicity, phonon dynamics, and thermal transport mechanisms.
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Submitted 22 January, 2025; v1 submitted 17 January, 2025;
originally announced January 2025.
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ABACUS: An Electronic Structure Analysis Package for the AI Era
Authors:
Weiqing Zhou,
Daye Zheng,
Qianrui Liu,
Denghui Lu,
Yu Liu,
Peize Lin,
Yike Huang,
Xingliang Peng,
Jie J. Bao,
Chun Cai,
Zuxin Jin,
Jing Wu,
Haochong Zhang,
Gan Jin,
Yuyang Ji,
Zhenxiong Shen,
Xiaohui Liu,
Liang Sun,
Yu Cao,
Menglin Sun,
Jianchuan Liu,
Tao Chen,
Renxi Liu,
Yuanbo Li,
Haozhi Han
, et al. (28 additional authors not shown)
Abstract:
ABACUS (Atomic-orbital Based Ab-initio Computation at USTC) is an open-source software for first-principles electronic structure calculations and molecular dynamics simulations. It mainly features density functional theory (DFT) and is compatible with both plane-wave basis sets and numerical atomic orbital basis sets. ABACUS serves as a platform that facilitates the integration of various electron…
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ABACUS (Atomic-orbital Based Ab-initio Computation at USTC) is an open-source software for first-principles electronic structure calculations and molecular dynamics simulations. It mainly features density functional theory (DFT) and is compatible with both plane-wave basis sets and numerical atomic orbital basis sets. ABACUS serves as a platform that facilitates the integration of various electronic structure methods, such as Kohn-Sham DFT, stochastic DFT, orbital-free DFT, and real-time time-dependent DFT, etc. In addition, with the aid of high-performance computing, ABACUS is designed to perform efficiently and provide massive amounts of first-principles data for generating general-purpose machine learning potentials, such as DPA models. Furthermore, ABACUS serves as an electronic structure platform that interfaces with several AI-assisted algorithms and packages, such as DeePKS-kit, DeePMD, DP-GEN, DeepH, DeePTB, etc.
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Submitted 20 January, 2025; v1 submitted 15 January, 2025;
originally announced January 2025.
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Mass Acquisition of Dirac Fermions in Bi4I4 by Spontaneous Symmetry Breaking
Authors:
Ming Yang,
Wenxuan Zhao,
Dan Mu,
Zhijian Shi,
Jingyuan Zhong,
Yaqi Li,
Yundan Liu,
Jianxin Zhong,
Ningyan Cheng,
Wei Zhou,
Jianfeng Wang,
Yan Shi,
Ying Sun,
Weichang Hao,
Lexian Yang,
Jincheng Zhuang,
Yi Du
Abstract:
Massive Dirac fermions, which are essential for realizing novel topological phenomena, are expected to be generated from massless Dirac fermions by breaking the related symmetry, such as time-reversal symmetry (TRS) in topological insulators or crystal symmetry in topological crystalline insulators. Here, we report scanning tunneling microscopy and angle-resolved photoemission spectroscopy studies…
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Massive Dirac fermions, which are essential for realizing novel topological phenomena, are expected to be generated from massless Dirac fermions by breaking the related symmetry, such as time-reversal symmetry (TRS) in topological insulators or crystal symmetry in topological crystalline insulators. Here, we report scanning tunneling microscopy and angle-resolved photoemission spectroscopy studies of α-Bi4I4, which reveals the realization of massive Dirac fermions in the (100) surface states without breaking the TRS. Combined with first-principle calculations, our experimental results indicate that the spontaneous symmetry breaking engenders two nondegenerate edges states at the opposite sides of monolayer Bi4I4 after the structural phase transition, imparting mass to the Dirac fermions after taking the interlayer coupling into account. Our results not only demonstrate the formation of the massive Dirac fermions by spontaneous symmetry breaking, but also imply the potential for the engineering of Dirac fermions for device applications.
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Submitted 17 December, 2024;
originally announced December 2024.
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Unveiling the anisotropy of linear and nonlinear charge-spin conversion in Weyl semimetal TaIrTe4
Authors:
Tao Tang,
Mengzhou Li,
Bin Lao,
Xuan Zheng,
Wei Zhou,
Xiaofeng Xu,
Jie Pang,
You-guo Shi,
Run-Wei Li,
Zhiming Wang
Abstract:
In Weyl semimetals, the nonlinear planar Hall effect (NPHE) and spin-orbit torque (SOT) are prominent manifestations of nonlinear and linear charge-spin conversion, respectively. However, simultaneous investigations of these phenomena within a single material system are scarce, limiting our understanding of their intrinsic connection and underlying mechanisms. Here, we report the first simultaneou…
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In Weyl semimetals, the nonlinear planar Hall effect (NPHE) and spin-orbit torque (SOT) are prominent manifestations of nonlinear and linear charge-spin conversion, respectively. However, simultaneous investigations of these phenomena within a single material system are scarce, limiting our understanding of their intrinsic connection and underlying mechanisms. Here, we report the first simultaneous observation of NPHE and SOT in a TaIrTe4/Py heterostructure. By employing harmonic Hall measurements and developing a magnetic field-dependent method, we successfully separated the contributions from NPHE, field-like SOT, and damping-like SOT, enabling accurate characterization of both linear and nonlinear charge-spin conversion properties. Our experiments revealed significant anisotropy along the [100] and [010] crystallographic directions of TaIrTe4, with stronger nonlinear responses and field-like SOT along the [100] direction, and larger damping-like SOT along the [010] direction. The distinct directional dependence of these phenomena provides new insights into the interplay between surface and bulk contributions to charge-spin conversion in Weyl semimetals. These findings enhance our understanding of anisotropic charge-spin conversion mechanisms in Weyl semimetals, which may inform future research and development of spintronic devices based on topological materials.
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Submitted 28 November, 2024;
originally announced November 2024.
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Insight into the effect of force error on the thermal conductivity from machine-learned potentials
Authors:
Wenjiang Zhou,
Nianjie Liang,
Xiguang Wu,
Shiyun Xiong,
Zheyong Fan,
Bai Song
Abstract:
Machine-learned potentials (MLPs) have been extensively used to obtain the lattice thermal conductivity via atomistic simulations. However, the impact of force errors in various MLPs on thermal transport has not been widely recognized and remains to be fully understood. Here, we employ MLP-driven molecular dynamics (MD) and anharmonic lattice dynamics (LD) to systematically investigate how the cal…
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Machine-learned potentials (MLPs) have been extensively used to obtain the lattice thermal conductivity via atomistic simulations. However, the impact of force errors in various MLPs on thermal transport has not been widely recognized and remains to be fully understood. Here, we employ MLP-driven molecular dynamics (MD) and anharmonic lattice dynamics (LD) to systematically investigate how the calculated thermal conductivity varies with the force errors, using boron arsenide as a prototypical material. We consistently observe an underestimation of thermal conductivity in MD simulations with three different MLPs including the neuroevolution potential, deep potential, and moment tensor potential. We provide a robust extrapolation scheme based on controlled force noises via the Langevin thermostat to correct this underestimation. The corrected results achieve a good agreement with previous experimental measurement from 200 K to 600 K. In contrast, the thermal conductivity values from LD calculations with MLPs readily align with the experimental data, which is attributed to the much smaller effects of the force errors on the force-constant calculations.
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Submitted 7 November, 2024;
originally announced November 2024.
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High proton conductivity through angstrom-porous titania
Authors:
Y. Ji,
G. -P. Hao,
Y. -T. Tan,
W. Q. Xiong,
Y. Liu,
W. Z. Zhou,
D. -M. Tang,
R. Z. Ma,
S. J. Yuan,
T. Sasaki,
M. Lozada-Hidalgo,
A. K. Geim,
Pengzhan Sun
Abstract:
Two dimensional (2D) crystals have attracted strong interest as a new class of proton conducting materials that can block atoms, molecules and ions while allowing proton transport through the atomically thin basal planes. Although 2D materials exhibit this perfect selectivity, the reported proton conductivities have been relatively low. Here we show that vacancy-rich titania monolayers are highly…
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Two dimensional (2D) crystals have attracted strong interest as a new class of proton conducting materials that can block atoms, molecules and ions while allowing proton transport through the atomically thin basal planes. Although 2D materials exhibit this perfect selectivity, the reported proton conductivities have been relatively low. Here we show that vacancy-rich titania monolayers are highly permeable to protons while remaining impermeable to helium with proton conductivity exceeding 100 S cm-2 at 200 C and surpassing targets set by industry roadmaps. The fast and selective proton transport is attributed to an extremely high density of titanium-atom vacancies (one per square nm), which effectively turns titania monolayers into angstrom-scale sieves. Our findings highlight the potential of 2D oxides as membrane materials for hydrogen-based technologies.
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Submitted 8 October, 2024;
originally announced October 2024.
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Highly efficient path-integral molecular dynamics simulations with GPUMD using neuroevolution potentials: Case studies on thermal properties of materials
Authors:
Penghua Ying,
Wenjiang Zhou,
Lucas Svensson,
Esmée Berger,
Erik Fransson,
Fredrik Eriksson,
Ke Xu,
Ting Liang,
Jianbin Xu,
Bai Song,
Shunda Chen,
Paul Erhart,
Zheyong Fan
Abstract:
Path-integral molecular dynamics (PIMD) simulations are crucial for accurately capturing nuclear quantum effects in materials. However, their computational intensity and reliance on multiple software packages often limit their applicability at large scales. Here, we present an integration of PIMD methods, including thermostatted ring-polymer molecular dynamics (TRPMD), into the open-source GPUMD p…
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Path-integral molecular dynamics (PIMD) simulations are crucial for accurately capturing nuclear quantum effects in materials. However, their computational intensity and reliance on multiple software packages often limit their applicability at large scales. Here, we present an integration of PIMD methods, including thermostatted ring-polymer molecular dynamics (TRPMD), into the open-source GPUMD package, combined with highly accurate and efficient machine-learned neuroevolution potential (NEP) models. This approach achieves almost the accuracy of first-principles calculations with the computational efficiency of empirical potentials, enabling large-scale atomistic simulations that incorporate nuclear quantum effects. We demonstrate the efficacy of the combined NEP-PIMD approach by examining various thermal properties of diverse materials, including lithium hydride (LiH), three porous metal-organic frameworks (MOFs), liquid water, and elemental aluminum. For LiH, our NEP-PIMD simulations successfully capture the isotope effect, reproducing the experimentally observed dependence of the lattice parameter on the reduced mass. For MOFs, our results reveal that achieving good agreement with experimental data requires consideration of both nuclear quantum effects and dispersive interactions. For water, our PIMD simulations capture the significant impact of nuclear quantum effects on its microscopic structure. For aluminum, the TRPMD method effectively captures thermal expansion and phonon properties, aligning well with quantum mechanical predictions. This efficient NEP-PIMD approach opens new avenues for exploring complex material properties influenced by nuclear quantum effects, with potential applications across a broad range of materials.
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Submitted 28 September, 2024; v1 submitted 6 September, 2024;
originally announced September 2024.
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Electric-field switchable chirality in rhombohedral graphene Chern insulators stabilized by tungsten diselenide
Authors:
Jing Ding,
Hanxiao Xiang,
Jiannan Hua,
Wenqiang Zhou,
Naitian Liu,
Le Zhang,
Na Xin,
Bing Wu,
Kenji Watanabe,
Takashi Taniguchi,
Zdenek Sofer,
Wei Zhu,
Shuigang Xu
Abstract:
Chern insulators host topologically protected chiral edge currents with quantized conductance characterized by their Chern number. Switching the chirality of a Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by r…
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Chern insulators host topologically protected chiral edge currents with quantized conductance characterized by their Chern number. Switching the chirality of a Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by reversing the sign of the Chern number through a topological phase transition. Here, we report electrically switchable chirality in rhombohedral multilayer graphene-based Chern insulators. By introducing moire superlattices in rhombohedral heptalayer graphene, we observed a cascade of topological phase transitions at quarter electron filling of a moire band with the Chern number tunable from -1, 1 to 2. Furthermore, integrating monolayer tungsten diselenide at the moireless interface of rhombohedral decalayer graphene/h-BN superlattices stabilizes the Chern insulators, enabling quantized anomalous Hall resistance of h/2e^2. Remarkably, the Chern number can be switched from -1 to 2 using displacement fields. Our work establishes rhombohedral multilayer graphene moire superlattices as a versatile platform for topological engineering, with switchable chirality offering significant promise for integrating chiral edge currents into topological electronic circuits.
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Submitted 23 January, 2025; v1 submitted 20 June, 2024;
originally announced June 2024.
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Lewis Acidity and Basicity Diagnostics of Molten Salt for its Properties and Structure Online Monitoring
Authors:
Changzu Zhu,
Jia Song,
Xiaorui Xu,
Chengyu Wang,
Yang Tong,
Lve Lin,
Shaoqiang Guo,
Wentao Zhou,
Adrien Couet,
Yafei Wang
Abstract:
Analogous to the aqueous solution where the pH of the solvent affects its multiple behaviors, the Lewis acidity-basicity of molten salts also greatly influences their thermophysical and thermochemical properties. In the study, we develop ion probes to quantitatively determine the acidity-basicity scale of molten NaCl-xAlCl3 (x = 1.5-2.1) salt using in-situ ultra-violet visible (UV-Vis) spectroscop…
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Analogous to the aqueous solution where the pH of the solvent affects its multiple behaviors, the Lewis acidity-basicity of molten salts also greatly influences their thermophysical and thermochemical properties. In the study, we develop ion probes to quantitatively determine the acidity-basicity scale of molten NaCl-xAlCl3 (x = 1.5-2.1) salt using in-situ ultra-violet visible (UV-Vis) spectroscopy. With the accumulation of acidity-basicity data of NaCl-AlCl3 molten salt for a variety of compositions, the correlation between the acidity-basicity of salt and its measured fundamental properties are derived. To understand the physical and chemical features controlling the acidity-basicity variations, the structures of NaCl-xAlCl3 molten salts with different chemical compositions are investigated in terms of bonded complexes and coordination numbers. The comprehensive understanding of the correlation between composition, acidity-basicity, properties, and structures of molten salt can serve for the full screening and online monitoring of salt melt in extreme environments by simply measuring the salt acidity-basicity as developed in this study.
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Submitted 19 June, 2024;
originally announced June 2024.
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Unusual charge density wave introduced by Janus structure in monolayer vanadium dichalcogenides
Authors:
Ziqiang Xu,
Yan Shao,
Chun Huang,
Genyu Hu,
Shihao Hu,
Zhi-Lin Li,
Xiaoyu Hao,
Yanhui Hou,
Teng Zhang,
Jin-An Shi,
Chen Liu,
Jia-Ou Wang,
Wu Zhou,
Jiadong Zhou,
Wei Ji,
Jingsi Qiao,
Xu Wu,
Hong-Jun Gao,
Yeliang Wang
Abstract:
As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fa…
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As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fabrication and material stability, the experimental visualization of the CDW states in 2D TMDs with Janus structure is still rare. Here, using surface selenization of VTe2, we fabricated monolayer Janus VTeSe. With scanning tunneling microscopy, an unusual root13-root13 CDW state with threefold rotational symmetry breaking was observed and characterized. Combined with theoretical calculations, we find this CDW state can be attributed to the charge modulation in the Janus VTeSe, beyond the conventional electron-phonon coupling. Our findings provide a promising platform for studying the CDW states and artificially tuning the electronic properties toward the applications.
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Submitted 17 June, 2024;
originally announced June 2024.
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Correlated electrons of the flat band in charge density wave state of 4Hb-TaSexS2-x
Authors:
Yanyan Geng,
Jianfeng Guo,
Fanyu Meng,
Manyu Wang,
Shuo Mi,
Li Huang,
Rui Xu,
Fei Pang,
Kai Liu,
Shancai Wang,
Hong-Jun Gao,
Weichang Zhou,
Wei Ji,
Hechang Lei,
Zhihai Cheng
Abstract:
Many intriguing quantum states of matter, such as unconventional superconductivity, magnetic phases and fractional quantum Hall physics, emergent from the spatially-correlated localized electrons in the flat band of solid materials. By using scanning tunneling microscopy and spectroscopy (STM/STS), we report the real-space investigation of correlated electrons in the flat band of superlattice 4Hb-…
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Many intriguing quantum states of matter, such as unconventional superconductivity, magnetic phases and fractional quantum Hall physics, emergent from the spatially-correlated localized electrons in the flat band of solid materials. By using scanning tunneling microscopy and spectroscopy (STM/STS), we report the real-space investigation of correlated electrons in the flat band of superlattice 4Hb-TaSexS2-x. In contrast with the pristine 4Hb-TaS2, the selenium (Se) substitutions significantly affect the interfacial transfer of correlated electrons between the CDW states of 1T- and 1H-TaS2 layers, and contribute a real-space fractional electron-filling configurations with the distributed electron-filled and -void SoD clusters of 1T-layer. The site-specific STS spectra directly reveal their respective prominent spectra weight above EF and symmetric Mott-like spectra. In addition, the spatial distributions of these electron-filled SoDs in the 1T-layer of 4Hb-TaSe0.7S1.3 demonstrate different local short-range patterning, clearly indicating the complex neighboring interactions among the localized electrons in the flat band of 1T-layer. Our results not only provide an in-depth insight of correlated electrons in the flat CDW band, and provide a simple platform to manipulate the electron-correlation-related quantum states.
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Submitted 10 June, 2024;
originally announced June 2024.
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Phonon heat conduction across slippery interfaces in twisted graphite
Authors:
Fuwei Yang,
Wenjiang Zhou,
Zhibin Zhang,
Xuanyu Huang,
Jingwen Zhang,
Nianjie Liang,
Wujuan Yan,
Yuxi Wang,
Mingchao Ding,
Quanlin Guo,
Yu Han,
Te-Huan Liu,
Kaihui Liu,
Quanshui Zheng,
Bai Song
Abstract:
Interlayer rotation in van der Waals (vdW) materials offers great potential for manipulating phonon dynamics and heat flow in advanced electronics with ever higher compactness and power density. However, despite extensive theoretical efforts in recent years, experimental measurements remain scarce especially due to the critical challenges of preparing single-crystalline twisted interfaces and prob…
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Interlayer rotation in van der Waals (vdW) materials offers great potential for manipulating phonon dynamics and heat flow in advanced electronics with ever higher compactness and power density. However, despite extensive theoretical efforts in recent years, experimental measurements remain scarce especially due to the critical challenges of preparing single-crystalline twisted interfaces and probing interfacial thermal transport with sufficient resolution. Here, we exploited the intrinsic twisted interfaces in highly oriented pyrolytic graphite (HOPG). By developing novel experimental schemes based on microfabricated mesas, we managed to achieve simultaneous mechanical characterizations and thermal measurements. In particular, we pushed the HOPG mesas with a microprobe to identify and rotate single-crystalline intrinsic interfaces owing to their slippery nature as is well known in structural superlubricity. Remarkably, we observed over 30-fold suppression of thermal conductance for the slippery interfaces by using epitaxial graphite as a control. Nonetheless, the interfacial conductance remains around 600 $\mathrm{MWm^{-2}K^{-1}}$ which surpasses the highest values for artificially stacked vdW structures by more than five times. Further, atomic simulations revealed the predominant role of the transverse acoustic phonons. Together, our findings highlight a general physical picture that directly correlates interfacial thermal transport with sliding resistance, and lay the foundation for twist-enabled thermal management which are particularly beneficial to twistronics and slidetronics.
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Submitted 6 June, 2024;
originally announced June 2024.
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Controlled fabrication of freestanding monolayer SiC by electron irradiation
Authors:
Yunli Da,
Ruichun Luo,
Bao Lei,
Wei Ji,
Wu Zhou
Abstract:
The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications. Electron irradiation has demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. It features the advantages of precise control over the patterning of such new materials…
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The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications. Electron irradiation has demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. It features the advantages of precise control over the patterning of such new materials and their integration with other materials with different functionalities. Here, we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane. By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope (STEM), we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice. The resultant SiC monolayers seamlessly connect with the graphene lattice, forming a planar structure distinct by a wide direct bandgap. Our in-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion, providing new insights into the atom-by-atom self-assembly of freestanding two-dimensional (2D) monolayers.
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Submitted 5 June, 2024;
originally announced June 2024.
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Polycatenated Architected Materials
Authors:
Wenjie Zhou,
Sujeeka Nadarajah,
Liuchi Li,
Anna G. Izard,
Hujie Yan,
Aashutosh K. Prachet,
Payal Patel,
Xiaoxing Xia,
Chiara Daraio
Abstract:
Architected materials derive their properties from the geometric arrangement of their internal structural elements. Their designs rely on continuous networks of members to control the global mechanical behavior of the bulk. Here, we introduce a class of materials that consist of discrete concatenated rings or cage particles interlocked in three-dimensional networks, forming polycatenated architect…
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Architected materials derive their properties from the geometric arrangement of their internal structural elements. Their designs rely on continuous networks of members to control the global mechanical behavior of the bulk. Here, we introduce a class of materials that consist of discrete concatenated rings or cage particles interlocked in three-dimensional networks, forming polycatenated architected materials (PAMs). We propose a general design framework that translates arbitrary crystalline networks into particles' concatenations and geometries. In response to small external loads, PAMs behave like non-Newtonian fluids, showing both shear-thinning and shear-thickening responses. At larger strains, PAMs behave like lattices and foams, with a nonlinear stress-strain relation. At microscale, we demonstrate that PAMs can change their shapes in response to applied electrostatic charges. PAM's unique properties pave the path for developing stimuli-responsive materials, energy-absorbing systems and morphing architectures.
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Submitted 9 October, 2024; v1 submitted 1 June, 2024;
originally announced June 2024.
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Engineering band structures of two-dimensional materials with remote moire ferroelectricity
Authors:
Jing Ding,
Hanxiao Xiang,
Wenqiang Zhou,
Naitian Liu,
Xinjie Fang,
Kangyu Wang,
Linfeng Wu,
Kenji Watanabe,
Takashi Taniguchi,
Shuigang Xu
Abstract:
The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry breaking in rhombohedral-stacked transitional metal dichalcogenides (TMDCs) endows them with an interfacial ferroelectricity associated with an out-of-plane elec…
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The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry breaking in rhombohedral-stacked transitional metal dichalcogenides (TMDCs) endows them with an interfacial ferroelectricity associated with an out-of-plane electric polarization. By utilizing twist angle as a knob to construct rhombohedral-stacked TMDCs, antiferroelectric domain networks with alternating out-of-plane polarization can be generated. Here, we demonstrate that such spatially periodic ferroelectric polarizations in parallel-stacked twisted WSe2 can imprint their moire potential onto a remote bilayer graphene. This remote moire potential gives rise to pronounced satellite resistance peaks besides the charge-neutrality point in graphene, which are tunable by the twist angle of WSe2. Our observations of ferroelectric hysteresis at finite displacement fields suggest the moire is delivered by a long-range electrostatic potential. The constructed superlattices by moire ferroelectricity represent a highly flexible approach, as they involve the separation of the moire construction layer from the electronic transport layer. This remote moire is identified as a weak potential and can coexist with conventional moire. Our results offer a comprehensive strategy for engineering band structures and properties of two-dimensional materials by utilizing moire ferroelectricity.
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Submitted 21 May, 2024;
originally announced May 2024.
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Defect-Assisted Domain Nucleation Drives Unique Exchange Bias Phenomena in $\bf{MnBi_2Te_4}$
Authors:
Shiqi Yang,
Xiaolong Xu,
Yuchen Gao,
Roger Guzman,
Pingfan Gu,
Huan Wang,
Yuan Huang,
Wu Zhou,
Tianlong Xia,
Yu Ye
Abstract:
The study of the mechanism of exchange bias phenomena and the achievement of its efficient control are of great importance, as it promotes the revelation of unique exchange interactions and the development of exotic applications. However, it is challenging due to the elusive interface between magnetic phases. In this study, we report an unprecedented exchange bias phenomenon observed in ultrathin…
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The study of the mechanism of exchange bias phenomena and the achievement of its efficient control are of great importance, as it promotes the revelation of unique exchange interactions and the development of exotic applications. However, it is challenging due to the elusive interface between magnetic phases. In this study, we report an unprecedented exchange bias phenomenon observed in ultrathin uncompensated antiferromagnetic MnBi$_2$Te$_4$. The magnitude and direction of the exchange field can be intentionally controlled by designing a magnetic field sweep protocol without a field cooling process. The combined experimental and theoretical simulation results indicate that the spin-flip process assisted by the ubiquitous defect-induced pinning domain sites with varying inner exchange interactions might give rise to the emergence and robustness of this peculiar exchange bias. The temperature and thickness dependence of the exchange bias phenomena are systematically investigated for further study and exploitation of its unique properties. This mechanism hold promise for highly tunable exchange bias in prevalent magnetic systems by engineering the properties of domain structures, and also offers promising avenues for the design of spintronic devices combing its topology based on MnBi$_2$Te$_4$.
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Submitted 3 May, 2024;
originally announced May 2024.
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Electronic states and quantum transport in bilayer graphene Sierpinski-carpet fractals
Authors:
Xiaotian Yang,
Weiqing Zhou,
Qi Yao,
Yunhai Li,
Yunhua Wang,
Shengjun Yuan
Abstract:
We construct Sierpinski-carpet (SC) based on AA or AB bilayer graphene by atom vacancies, namely, SC-AA and SC-AB, to investigate the effects of interlayer coupling on the electronic properties of fractals. Compared with monolayer graphene SC, their density of states have similar features, such as Van-Hove singularities and edge states corresponding to the central peaks near zero energy, but remar…
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We construct Sierpinski-carpet (SC) based on AA or AB bilayer graphene by atom vacancies, namely, SC-AA and SC-AB, to investigate the effects of interlayer coupling on the electronic properties of fractals. Compared with monolayer graphene SC, their density of states have similar features, such as Van-Hove singularities and edge states corresponding to the central peaks near zero energy, but remarkable energy broadening of edge states emerges in SC-AA(AB). Calculated conductance spectrum shows that the conductance fluctuations still hold the Hausdorff fractal dimension behavior even with the interlayer coupling. Thus, the high correlation between quantum conductance and fractal geometry dimension is not affected by the interlayer coupling in bilayer graphene SC. We further reveal the quasi-eigenstates in fractal-like pressure-modulated bilayer graphene, namely, SC-pAA and SC-pAB. Numerical results show that the density of states of SC-pAA(pAB) show an asymptotic behavior to those of SC-AA(AB) especially for high energy quasi-eigenstates. Within a certain energy range, stronger pressure can lead to stronger localization, forming an efficient fractal space.
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Submitted 17 April, 2024; v1 submitted 16 April, 2024;
originally announced April 2024.
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Electronic ferroelectricity in monolayer graphene for multifunctional neuromorphic electronics
Authors:
Le Zhang,
Jing Ding,
Hanxiao Xiang,
Naitian Liu,
Wenqiang Zhou,
Linfeng Wu,
Na Xin,
Kenji Watanabe,
Takashi Taniguchi,
Shuigang Xu
Abstract:
Ferroelectricity is intriguing for its spontaneous electric polarization, which is switchable by an external electric field. Expanding ferroelectric materials to two-dimensional limit will provide versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires the materials consisting of at least two constituent elements associated with pol…
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Ferroelectricity is intriguing for its spontaneous electric polarization, which is switchable by an external electric field. Expanding ferroelectric materials to two-dimensional limit will provide versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires the materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices. Nevertheless, two-dimensional moire superlattices offer a powerful way to engineer diverse electronic orders in non-polar materials. Here, we report the observations of electronic ferroelectricity in monolayer graphene by introducing asymmetric moire superlattice at the graphene/h-BN interface. Utilizing Hall measurements, the electric polarization is identified to stem from electron-hole dipoles, suggesting the electronic dynamics of the observed ferroelectricity. Standard polarization-electric field hysteresis loops, as well as unconventional multiple switchable polarization states, have been achieved. By in-situ comparing with control devices, we found that the electronic ferroelectricity in graphene moire systems is independent of layer number of graphene and the corresponding fine band structures. Furthermore, we demonstrate the applications of this ferroelectric moire structures in multi-state non-volatile data storage and the emulation of versatile synaptic behaviors, including short-term plasticity, long-term potentiation and long-term depression. This work not only enriches the fundamental understanding of ferroelectricity, but also demonstrates the promising applications of graphene in multi-state memories and neuromorphic computing.
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Submitted 4 April, 2024;
originally announced April 2024.
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Thermal transport in a 2D amorphous material
Authors:
Yuxi Wang,
Xingxing Zhang,
Wujuan Yan,
Nianjie Liang,
Haiyu He,
Xinwei Tao,
Ang Li,
Fuwei Yang,
Buxuan Li,
Te-Huan Liu,
Jia Zhu,
Wu Zhou,
Wei Wang,
Lin Zhou,
Bai Song
Abstract:
Two-dimensional (2D) crystals proved revolutionary soon after graphene was discovered in 2004. However, 2D amorphous materials only became accessible in 2020 and remain largely unexplored. In particular, the thermophysical properties of amorphous materials are of great interest upon transition from 3D to 2D. Here, we probe thermal transport in 2D amorphous carbon. A cross-plane thermal conductivit…
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Two-dimensional (2D) crystals proved revolutionary soon after graphene was discovered in 2004. However, 2D amorphous materials only became accessible in 2020 and remain largely unexplored. In particular, the thermophysical properties of amorphous materials are of great interest upon transition from 3D to 2D. Here, we probe thermal transport in 2D amorphous carbon. A cross-plane thermal conductivity ($κ$) down to 0.079 $\rm{Wm}^{-1}K^{-1}$ is measured for van der Waals stacked multilayers at room temperature, which is among the lowest reported to date. Meanwhile, an unexpectedly high in-plane $κ$ is obtained for freestanding monolayers which is a few times larger than what is predicted by conventional wisdom for 3D amorphous carbon with similar $\rm{sp}^{2}$ fraction. Our molecular dynamics simulations reveal the role of disorder and highlight the impact of dimensionality. Amorphous materials at the 2D limit open up new avenues for understanding and manipulating heat at the atomic scale.
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Submitted 22 March, 2024; v1 submitted 20 February, 2024;
originally announced February 2024.
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Systematic Absences of Optical Phonon Modes in Phonon Dispersion Measured by Electron Microscopy
Authors:
Aowen Li,
Paul Zeiger,
Zuxian He,
Mingquan Xu,
Stephen J. Pennycook,
Ján Rusz,
Wu Zhou
Abstract:
Phonon dispersion is widely used to elucidate the vibrational properties of materials. As an emerging technique, momentum-resolved vibrational spectroscopy in scanning transmission electron microscopy (STEM) offers an unparalleled approach to explore q-dependent phonon behavior at local structures. In this study, we systematically investigate the phonon dispersion of monolayer graphene across seve…
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Phonon dispersion is widely used to elucidate the vibrational properties of materials. As an emerging technique, momentum-resolved vibrational spectroscopy in scanning transmission electron microscopy (STEM) offers an unparalleled approach to explore q-dependent phonon behavior at local structures. In this study, we systematically investigate the phonon dispersion of monolayer graphene across several Brillouin zones (BZs) using momentum-resolved vibrational spectroscopy and find that the optical phonon signals vanish at the Γ points with indices (hk0) satisfying h+2k=3n (n denoted integers). Theoretical analysis reveals that the observed phenomena arise from the complete destructive interference of the scattered waves from different basis atoms. This observation, corroborated by the study of diamond, should be a general characteristic of materials composed of symmetrically equivalent pairs of the same elements. Moreover, our results emphasize the importance of multiple scattering in interpreting the vibrational signals in bulk materials. We demonstrate that the systematic absences and dynamic effects, which have not been much appreciated before, offer new insights into the experimental assessment of local vibrational properties of materials.
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Submitted 6 June, 2024; v1 submitted 17 February, 2024;
originally announced February 2024.
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Molecular dynamics simulations of heat transport using machine-learned potentials: A mini review and tutorial on GPUMD with neuroevolution potentials
Authors:
Haikuan Dong,
Yongbo Shi,
Penghua Ying,
Ke Xu,
Ting Liang,
Yanzhou Wang,
Zezhu Zeng,
Xin Wu,
Wenjiang Zhou,
Shiyun Xiong,
Shunda Chen,
Zheyong Fan
Abstract:
Molecular dynamics (MD) simulations play an important role in understanding and engineering heat transport properties of complex materials. An essential requirement for reliably predicting heat transport properties is the use of accurate and efficient interatomic potentials. Recently, machine-learned potentials (MLPs) have shown great promise in providing the required accuracy for a broad range of…
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Molecular dynamics (MD) simulations play an important role in understanding and engineering heat transport properties of complex materials. An essential requirement for reliably predicting heat transport properties is the use of accurate and efficient interatomic potentials. Recently, machine-learned potentials (MLPs) have shown great promise in providing the required accuracy for a broad range of materials. In this mini review and tutorial, we delve into the fundamentals of heat transport, explore pertinent MD simulation methods, and survey the applications of MLPs in MD simulations of heat transport. Furthermore, we provide a step-by-step tutorial on developing MLPs for highly efficient and predictive heat transport simulations, utilizing the neuroevolution potentials (NEPs) as implemented in the GPUMD package. Our aim with this mini review and tutorial is to empower researchers with valuable insights into cutting-edge methodologies that can significantly enhance the accuracy and efficiency of MD simulations for heat transport studies.
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Submitted 24 April, 2024; v1 submitted 29 January, 2024;
originally announced January 2024.
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Isotope engineering of carrier mobility via Fröhlich electron-phonon interaction
Authors:
Wenjiang Zhou,
Te-Huan Liu,
Bai Song
Abstract:
Isotope effects on phonon properties and transport have been predicted and observed for decades. However, despite the crucial impact of electron-phonon interactions, the effect of isotopes on electron transport remains largely unexplored. Here, by using first-principles calculations, we theoretically predict that the electron mobility of lithium hydride (LiH) can increase by up to ~100% as…
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Isotope effects on phonon properties and transport have been predicted and observed for decades. However, despite the crucial impact of electron-phonon interactions, the effect of isotopes on electron transport remains largely unexplored. Here, by using first-principles calculations, we theoretically predict that the electron mobility of lithium hydride (LiH) can increase by up to ~100% as $^3\rm{H}$ is replaced with $^1\rm{H}$. This remarkable phenomenon is primarily attributed to the isotope engineering of the Fröhlich interaction by the mass-induced line shift of the longitudinal optical (LO) phonons. Notably, the isotope-dependent absorption of LO phonons dominates while the isotope-insensitive emission process is mostly suppressed due to energy conservation. We further propose general guidelines for evaluating isotope effects on carrier transport in different materials.
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Submitted 26 January, 2024;
originally announced January 2024.
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Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces
Authors:
Gyanendra Singh,
Roger Guzman,
Guilhem Saïz,
Wu Zhou,
Jaume Gazquez,
Jordi Fraxedas,
Fereshteh Masoudinia,
Dag Winkler,
Tord Claeson,
Nicolas Bergeal,
Gervasi Herranz,
Alexei Kalaboukhov
Abstract:
SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO$_3$/SrTiO$_3$ (LAO/STO…
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SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces with remarkably large mobility and mean free paths comparable to the superconducting coherence length, approaching the clean limit for superconductivity. We further show that the carrier density, mobility, and formation of the superconducting condensate are controlled by the fine-tuning of La/Al chemical ratio in the LAO film. Interestingly, we find a region in the superconducting phase diagram where the critical temperature is not suppressed below the Lifshitz transition, at odds with previous experimental investigations. These findings point out the relevance of achieving a clean-limit regime to enhance the observation of unconventional pairing mechanisms in these systems
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Submitted 25 January, 2024;
originally announced January 2024.
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Correcting force error-induced underestimation of lattice thermal conductivity in machine learning molecular dynamics
Authors:
Xiguang Wu,
Wenjiang Zhou,
Haikuang Dong,
Penghua Ying,
Yanzhou Wang,
Bai Song,
Zheyong Fan,
Shiyun Xiong
Abstract:
Machine learned potentials (MLPs) have been widely employed in molecular dynamics (MD) simulations to study thermal transport. However, literature results indicate that MLPs generally underestimate the lattice thermal conductivity (LTC) of typical solids. Here, we quantitatively analyze this underestimation in the context of the neuroevolution potential (NEP), which is a representative MLP that ba…
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Machine learned potentials (MLPs) have been widely employed in molecular dynamics (MD) simulations to study thermal transport. However, literature results indicate that MLPs generally underestimate the lattice thermal conductivity (LTC) of typical solids. Here, we quantitatively analyze this underestimation in the context of the neuroevolution potential (NEP), which is a representative MLP that balances efficiency and accuracy. Taking crystalline silicon, GaAs, graphene, and PbTe as examples, we reveal that the fitting errors in the machine-learned forces against the reference ones are responsible for the underestimated LTC as they constitute external perturbations to the interatomic forces. Since the force errors of a NEP model and the random forces in the Langevin thermostat both follow a Gaussian distribution, we propose an approach to correcting the LTC by intentionally introducing different levels of force noises via the Langevin thermostat and then extrapolating to the limit of zero force error. Excellent agreement with experiments is obtained by using this correction for all the prototypical materials over a wide range of temperatures. Based on spectral analyses, we find that the LTC underestimation mainly arises from increased phonon scatterings in the low-frequency region caused by the random force errors.
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Submitted 26 May, 2024; v1 submitted 21 January, 2024;
originally announced January 2024.
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Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn$_6$Sn$_6$ (R = Er, Tb) Thin Films
Authors:
Shuyu Cheng,
Igor Lyalin,
Wenyi Zhou,
Roland K. Kawakami
Abstract:
Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$ (R = rare earth) compounds are particularly interesting because of the existence of large intrinsic anomalous Hall effect (AHE) which originates from the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an outstanding candidate for r…
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Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$ (R = rare earth) compounds are particularly interesting because of the existence of large intrinsic anomalous Hall effect (AHE) which originates from the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an outstanding candidate for realizing the high-temperature quantum anomalous Hall effect. The growth of RMn$_6$Sn$_6$ thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn$_6$Sn$_6$ have focused on bulk crystals so far, and the synthesis of RMn$_6$Sn$_6$ thin films has not been reported so far. Here we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn$_6$Sn$_6$ and TbMn$_6$Sn$_6$ thin films. It is especially noteworthy that TbMn$_6$Sn$_6$ thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum anomalous Hall effect. Our work paves the avenue toward the control of the AHE using devices patterned from RMn$_6$Sn$_6$ thin films.
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Submitted 9 January, 2024;
originally announced January 2024.
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Filling-dependent intertwined electronic and atomic orders in the flat-band state of 1T-TaS2
Authors:
Yanyan Geng,
Haoyu Dong,
Renhong Wang,
Jianfeng Guo,
Shuo Mi,
Le Lei,
Yan Li,
Li Huang,
Fei Pang,
Rui Xu,
Weiqiang Yu,
Wei Ji,
Hong-Jun Gao,
Weichang Zhou,
Zhihai Cheng
Abstract:
The delicate interplay among the complex intra-/inter-layer electron-electron and electron-lattice interactions is the fundamental prerequisite of these exotic quantum states, such as superconductivity, nematic order, and checkerboard charge order. Here we explore the filling-dependent multiple stable intertwined electronic and atomic orders of flat-band state of 1T-TaS2 encompassing hole order, p…
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The delicate interplay among the complex intra-/inter-layer electron-electron and electron-lattice interactions is the fundamental prerequisite of these exotic quantum states, such as superconductivity, nematic order, and checkerboard charge order. Here we explore the filling-dependent multiple stable intertwined electronic and atomic orders of flat-band state of 1T-TaS2 encompassing hole order, phase orders, coexisting left- and right-chiral orders and mixed phase/chiral orders via scanning tunneling microscopy (STM). Combining first-principles calculations, the emergent electronic/atomic orders can be attributed to the weakening of electron-electron correlations and stacking-dependent interlayer interactions. Moreover, achiral intermediate ring-like clusters and nematic charge density wave (CDW) states are successfully realized in intralayer chiral domain wall and interlayer heterochiral stacking regions through chiral overlap configurations. Our study not only deepens the understanding of filling-dependent electronic/atomic orders in flat-band systems, but also offers perspectives for exploring exotic quantum states in correlated electronic systems.
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Submitted 8 February, 2025; v1 submitted 2 January, 2024;
originally announced January 2024.
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Inversion symmetry-broken tetralayer graphene probed by second harmonic generation
Authors:
Wenqiang Zhou,
Jiannan Hua,
Naitian Liu,
Jing Ding,
Hanxiao Xiang,
Wei Zhu,
Shuigang Xu
Abstract:
Symmetry breaking governs most fascinating phenomena in crystals, such as ferroelectricity, nonlinear optics, piezoelectricity, ferromagnetism, and superconductivity. In two-dimensional materials, a wide variety of tuning knobs presents extraordinary opportunities for engineering symmetry breaking, leading to the emergence and manipulation of novel physical properties. Recently, tetralayer graphen…
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Symmetry breaking governs most fascinating phenomena in crystals, such as ferroelectricity, nonlinear optics, piezoelectricity, ferromagnetism, and superconductivity. In two-dimensional materials, a wide variety of tuning knobs presents extraordinary opportunities for engineering symmetry breaking, leading to the emergence and manipulation of novel physical properties. Recently, tetralayer graphene with ABCB stacking order is predicted to possess atypical elemental ferroelectricity arising from the symmetry breaking induced by its specific stacking configuration. Experimentally unveiling the stacking-order dependent symmetry in tetralayer graphene is crucial to understand the intricate properties in the emergent graphene allotropes. Here, we observe pronounced nonlinear optical second harmonic generation (SHG) in ABCB-stacked tetralayer graphene, but absent in both ABAB- and ABCA-stacked allotropes. Our results provide direct evidence of symmetry breaking in ABCB-stacked tetralayer graphene. The remarkable contrast in the SHG spectra of tetralayer graphene allows straightforward identification of ABCB domains from the other two kinds of stacking order and facilitates the characterization of their crystalline orientation. The employed SHG technique serves as a convenient tool for exploring the intriguing physics and novel nonlinear optics in ABCB-stacked graphene, where spontaneous polarization and intrinsic gapped flat bands coexist. Our results establish ABCB-stacked graphene as a unique platform for studying the rare ferroelectricity in non-centrosymmetric elemental structures.
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Submitted 28 November, 2023;
originally announced November 2023.
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Multiple superconducting phases driven by pressure in the topological insulator GeSb4Te7
Authors:
W. Zhou,
B. Li,
Y. Shen,
J. J. Feng,
C. Q. Xu,
H. T. Guo,
Z. He,
B. Qian,
Ziming Zhu,
Xiaofeng Xu
Abstract:
Tuning superconductivity in topological materials by means of chemical substitution, electrostatic gating, or pressure is thought to be an effective route towards realizing topological superconductivity with their inherent Majorana fermions, the manipulation of which may form the basis for future topological quantum computing. It has recently been established that the pseudo-binary chalcogenides (…
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Tuning superconductivity in topological materials by means of chemical substitution, electrostatic gating, or pressure is thought to be an effective route towards realizing topological superconductivity with their inherent Majorana fermions, the manipulation of which may form the basis for future topological quantum computing. It has recently been established that the pseudo-binary chalcogenides (ACh)m(Pn2Ch3)n (A = Ge, Mn, Pb, etc.; Pn = Sb or Bi; Ch = Te, Se) may host novel topological quantum states such as the quantum anomalous Hall effect and topological axion states. Here we map out the phase diagram of one member in this series, the topological insulator candidate GeSb4Te7 up to pressures of ~35 GPa, through a combination of electrical resistance measurements, Raman spectroscopy, as well as first-principles calculations. Three distinct superconducting phases emerge under the pressure above ~11, ~17, and ~31 GPa, which are accompanied by concomitant structural transitions, evidenced from the changes in the Raman modes. The first-principles calculations validate the existence of a topological insulating state at ambient pressure and predict two possible structural transitions at 10 and 17 GPa, in agreement with the experimental observations. Overall, our results establish the GeSb4Te7 family of materials as a fertile arena for further exploring various topological phenomena, including topological phase transitions and putative topological superconductivity.
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Submitted 24 November, 2023;
originally announced November 2023.
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Polytypism of Incommensurately Modulated Structures of Crystalline Bromine upon Molecular Dissociation under High Pressure
Authors:
Yuqing Yin,
Andrey Aslandukov,
Maxim Bykov,
Dominique Laniel,
Alena Aslandukova,
Anna Pakhomova,
Timofey Fedotenko,
Wenju Zhou,
Fariia Iasmin Akbar,
Michael Hanfland,
Konstantin Glazyrin,
Carlotta Giacobbe,
Eleanor Lawrence Bright,
Gaston Garbarino,
Zhitai Jia,
Natalia Dubrovinskaia,
Leonid Dubrovinsky
Abstract:
Polytypism of incommensurately modulated structures was hitherto unobserved. Here, we found the phenomenon in simple halogen systems of bromine and iodine upon molecular dissociation in the solids under pressure. Single-crystal synchrotron X-ray diffraction in laser heated diamond anvil cells pressurised up to 112 GPa revealed a number of allotropes of bromine and iodine including polytypes of Br-…
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Polytypism of incommensurately modulated structures was hitherto unobserved. Here, we found the phenomenon in simple halogen systems of bromine and iodine upon molecular dissociation in the solids under pressure. Single-crystal synchrotron X-ray diffraction in laser heated diamond anvil cells pressurised up to 112 GPa revealed a number of allotropes of bromine and iodine including polytypes of Br-IIIγ (Fmmm(00γ)s00) with γ varying within 0.18 to 0.3.
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Submitted 21 November, 2023;
originally announced November 2023.
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Phonon vortices at heavy impurities in two-dimensional materials
Authors:
De-Liang Bao,
Mingquan Xu,
Ao-Wen Li,
Gang Su,
Wu Zhou,
Sokrates T. Pantelides
Abstract:
The advent of monochromated electron energy-loss spectroscopy has enabled atomic-resolution vibrational spectroscopy, which triggered interest in spatially localized or quasi-localized vibrational modes in materials. Here we report the discovery of phonon vortices at heavy impurities in two-dimensional materials. We use density-functional-theory calculations for two configurations of Si impurities…
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The advent of monochromated electron energy-loss spectroscopy has enabled atomic-resolution vibrational spectroscopy, which triggered interest in spatially localized or quasi-localized vibrational modes in materials. Here we report the discovery of phonon vortices at heavy impurities in two-dimensional materials. We use density-functional-theory calculations for two configurations of Si impurities in graphene, Si-C3 and Si-C4, to examine atom-projected phonon densities of states and display the atomic-displacement patterns for select modes that are dominated by impurity displacements. The vortices are driven by large displacements of the impurities, and reflect local symmetries. Similar vortices are found at phosphorus impurities in hexagonal boron nitride, suggesting that they may be a feature of heavy impurities in crystalline materials. Phonon vortices at defects are expected to play a role in thermal conductivity and other properties.
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Submitted 12 October, 2023;
originally announced October 2023.
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Secondary proximity effect in a side-coupled double quantum dot structure
Authors:
Jia-Ning Wang,
Yong-Chen Xiong,
Wang-Huai Zhou,
Tan Peng,
Ziyu Wang
Abstract:
Semiconductor quantum dots in close proximity to superconductors may provoke localized bound states within the superconducting energy gap known as Yu-Shiba-Rusinov (YSR) state, which is a promising candidate for constructing Majorana zero modes and topological qubits. Side-coupled double quantum dot systems are ideal platforms revealing the secondary proximity effect. Numerical renormalization gro…
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Semiconductor quantum dots in close proximity to superconductors may provoke localized bound states within the superconducting energy gap known as Yu-Shiba-Rusinov (YSR) state, which is a promising candidate for constructing Majorana zero modes and topological qubits. Side-coupled double quantum dot systems are ideal platforms revealing the secondary proximity effect. Numerical renormalization group calculations show that, if the central quantum dot can be treated as a noninteracting resonant level, it acts as a superconducting medium due to the ordinary proximity effect. The bound state in the side dot behaves as the case of a single impurity connected to two superconducting leads. The side dot undergoes quantum phase transitions between a singlet state and a doublet state as the Coulomb repulsion, the interdot coupling strength, or the energy level sweeps. Phase diagrams indicate that the phase boundaries could be well illustrated by $Δ\approx c {T_{K2}}$ in all cases, with $Δ$ is the superconducting gap, $T_{K2}$ is the side Kondo temperature and $c$ is of the order $1.0$. These findings offer valuable insights into the secondary proximity effect, and show great importance for designing superconducting quantum devices.
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Submitted 9 October, 2023;
originally announced October 2023.
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Surface ferromagnetism in rhombohedral heptalayer graphene moire superlattice
Authors:
Wenqiang Zhou,
Jing Ding,
Jiannan Hua,
Le Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Wei Zhu,
Shuigang Xu
Abstract:
The topological electronic structure of crystalline materials often gives rise to intriguing surface states, such as Dirac surface states in topological insulators, Fermi arc surface states in Dirac semimetals, and topological superconductivity in iron-based superconductors. Recently, rhombohedral multilayer graphene has emerged as a promising platform for exploring exotic surface states due to it…
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The topological electronic structure of crystalline materials often gives rise to intriguing surface states, such as Dirac surface states in topological insulators, Fermi arc surface states in Dirac semimetals, and topological superconductivity in iron-based superconductors. Recently, rhombohedral multilayer graphene has emerged as a promising platform for exploring exotic surface states due to its hosting of topologically protected surface flat bands at low energy, with the layer-dependent energy dispersion. These flat bands can promote electron correlations, leading to a plethora of quantum phenomena, including spontaneous symmetry breaking, superconductivity, ferromagnetism, and topological Chern insulators. Nevertheless, the intricate connection between the surface flat bands in rhombohedral multilayer graphene and the highly dispersive high-energy bands hinders the exploration of correlated surface states. Here, we present a method to isolate the surface flat bands of rhombohedral heptalayer (7L) graphene by introducing moire superlattices. The pronounced screening effects observed in the moire potential-modulated rhombohedral 7L graphene indicate its essential three-dimensional (3D) nature. The isolated surface flat bands favor correlated states on the surface in the regions away from charge-neutrality points. Most notably, we observe tunable surface ferromagnetism, manifested as an anomalous Hall effect with hysteresis loops, which is achieved by polarizing surface states using finite displacement fields. Our work establishes rhombohedral multilayer graphene moire superlattice as a unique 3D system for exploring correlated surface states.
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Submitted 8 October, 2023;
originally announced October 2023.
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Tuning the Curie temperature of a 2D magnet/topological insulator heterostructure to above room temperature by epitaxial growth
Authors:
Wenyi Zhou,
Alexander J. Bishop,
Xiyue S. Zhang,
Katherine Robinson,
Igor Lyalin,
Ziling Li,
Ryan Bailey-Crandell,
Thow Min Jerald Cham,
Shuyu Cheng,
Yunqiu Kelly Luo,
Daniel C. Ralph,
David A. Muller,
Roland K. Kawakami
Abstract:
Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize th…
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Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature ($T_C$) in thin film Fe$_3$GeTe$_2$/Bi$_2$Te$_3$ from bulk-like values ($\sim$220 K) to above room temperature by increasing the growth temperature from 300 $^\circ$C to 375 $^\circ$C. For samples grown at 375 $^\circ$C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe$_m$Ge$_n$Te$_2$ compositions (e.g. Fe$_5$Ge$_2$Te$_2$ and Fe$_7$Ge$_6$Te$_2$) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. This observation paves the way for developing various Fe$_m$Ge$_n$Te$_2$/TI heterostructures with novel properties.
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Submitted 25 August, 2023;
originally announced August 2023.
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Controlling the 2D magnetism of CrBr$_3$ by van der Waals stacking engineering
Authors:
Shiqi Yang,
Xiaolong Xu,
Bo Han,
Pingfan Gu,
Roger Guzman,
Yiwen Song,
Zhongchong Lin,
Peng Gao,
Wu Zhou,
Jinbo Yang,
Zuxin Chen,
Yu Ye
Abstract:
The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and prep…
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The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and preparing device-ready 2D magnets with controllable magnetic orders remain elusive. Here, we demonstrate effective control of interlayer stacking in exfoliated CrBr$_3$ via thermally assisted strain engineering. The stable interlayer ferromagnetic (FM), antiferromagnetic (AFM), and FM-AFM coexistent ground states confirmed by the magnetic circular dichroism measurements are realized. Combined with the first-principles calculations, the atomically-resolved imaging technique reveals the correlation between magnetic order and interlay stacking order in the CrBr$_3$ flakes unambiguously. A tunable exchange bias effect is obtained in the mixed phase of FM and AFM states. This work will introduce new magnetic properties by controlling the stacking order, and sequence of 2D magnets, providing ample opportunities for their application in spintronic devices.
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Submitted 22 August, 2023;
originally announced August 2023.
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Epitaxial Kagome Thin Films as a Platform for Topological Flat Bands
Authors:
Shuyu Cheng,
M. Nrisimhamurty,
Tong Zhou,
Nuria Bagues,
Wenyi Zhou,
Alexander J. Bishop,
Igor Lyalin,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
David W. McComb,
Igor Zutic,
Roland K. Kawakami
Abstract:
Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi l…
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Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi level via electrostatic gating or strain. Here we report the band structures of epitaxial CoSn thin films grown directly on insulating substrates. Flat bands are observed using synchrotron-based angle-resolved photoemission spectroscopy (ARPES). The band structure is consistent with density functional theory (DFT) calculations, and the transport properties are quantitatively explained by the band structure and semiclassical transport theory. Our work paves the way to realize flat band-induced phenomena through fine-tuning of flat bands in kagome materials.
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Submitted 28 July, 2023;
originally announced July 2023.
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Deep learning inter-atomic potential for irradiation damage in 3C-SiC
Authors:
Yong Liu,
Hao Wang,
Linxin Guo,
Zhanfeng Yan,
Jian Zheng,
Wei Zhou,
Jianming Xue
Abstract:
We developed and validated an accurate inter-atomic potential for molecular dynamics simulation in cubic silicon carbide (3C-SiC) using a deep learning framework combined with smooth Ziegler-Biersack-Littmark (ZBL) screened nuclear repulsion potential interpolation. Comparisons of multiple important properties were made between the deep-learning potential and existing analytical potentials which a…
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We developed and validated an accurate inter-atomic potential for molecular dynamics simulation in cubic silicon carbide (3C-SiC) using a deep learning framework combined with smooth Ziegler-Biersack-Littmark (ZBL) screened nuclear repulsion potential interpolation. Comparisons of multiple important properties were made between the deep-learning potential and existing analytical potentials which are most commonly used in molecular dynamics simulations of 3C-SiC. Not only for equilibrium properties but also for significant properties of radiation damage such as defect formation energies and threshold displacement energies, our deep-learning potential gave closer predictions to DFT criterion than analytical potentials. The deep-learning potential framework solved the long-standing dilemma that traditional empirical potentials currently applied in 3C-SiC radiation damage simulations gave large disparities with each other and were inconsistent with ab-initio calculations. A more realistic depiction of the primary irradiation damage process in 3C-SiC can be given and the accuracy of classical molecular dynamics simulation for cubic silicon carbide can be expected to the level of quantum mechanics.
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Submitted 30 May, 2023;
originally announced May 2023.