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Neutron scattering and muon-spin spectroscopy studies of the magnetic triangular-lattice compounds $A_2$La$_2$NiW$_2$O$_{12}$ ($A$ = Sr, Ba)
Authors:
B. C. Yu,
J. Y. Yang,
D. J. Gawryluk,
Y. Xu,
Q. F. Zhan,
T. Shiroka,
T. Shang
Abstract:
We report on the geometrically frustrated two-dimensional triangular-lattice magnets $A_2$La$_2$NiW$_2$O$_{12}$ ($A$ = Sr, Ba) studied mostly by means of neutron powder diffraction (NPD) and muon-spin rotation and relaxation ($μ$SR) techniques. The chemical pressure induced by the Ba-for-Sr substitution suppresses the ferromagnetic (FM) transition from 6.3 K in the Ba-compound to 4.8 K in the Sr-c…
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We report on the geometrically frustrated two-dimensional triangular-lattice magnets $A_2$La$_2$NiW$_2$O$_{12}$ ($A$ = Sr, Ba) studied mostly by means of neutron powder diffraction (NPD) and muon-spin rotation and relaxation ($μ$SR) techniques. The chemical pressure induced by the Ba-for-Sr substitution suppresses the ferromagnetic (FM) transition from 6.3 K in the Ba-compound to 4.8 K in the Sr-compound. We find that the $R\bar{3}$ space group reproduces the NPD patterns better than the previously reported $R\bar{3}m$ space group. Both compounds adopt the same magnetic structure with a propagation vector $\boldsymbol{k} = (0, 0, 0)$, in which the Ni$^{2+}$ magnetic moments are aligned ferromagnetically along the $c$-axis. The zero-field {\textmu}SR results reveal two distinct internal fields (0.31 and 0.10 T), caused by the long-range ferromagnetic order. The small transverse muon-spin relaxation rates reflect the homogeneous internal field distribution in the ordered phase and, thus, further support the simple FM arrangement of the Ni$^{2+}$ moments. The small longitudinal muon-spin relaxation rates, in both the ferromagnetic- and paramagnetic states of A$_2$La$_2$NiW$_2$O$_{12}$, indicate that spin fluctuations are rather weak. Our results demonstrate that chemical pressure indeed changes the superexchange interactions in $A_2$La$_2$NiW$_2$O$_{12}$ compounds, with the FM interactions being dominant.
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Submitted 9 July, 2023;
originally announced July 2023.
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Fully-gapped superconductivity and topological aspects of the noncentrosymmetric TaReSi superconductor
Authors:
T. Shang,
J. Z. Zhao,
Lun-Hui Hu,
D. J. Gawryluk,
X. Y. Zhu,
H. Zhang,
J. Meng,
Z. X. Zhen,
B. C. Yu,
Z. Zhou,
Y. Xu,
Q. F. Zhan,
E. Pomjakushina,
T. Shiroka
Abstract:
We report a study of the noncentrosymmetric TaReSi superconductor by means of muon-spin rotation and relaxation ($μ$SR) technique, complemented by electronic band-structure calculations. Its superconductivity, with $T_c$ = 5.5 K and upper critical field $μ_0H_\mathrm{c2}(0)$ $\sim$ 3.4 T, was characterized via electrical-resistivity- and magnetic-susceptibility measurements. The temperature-depend…
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We report a study of the noncentrosymmetric TaReSi superconductor by means of muon-spin rotation and relaxation ($μ$SR) technique, complemented by electronic band-structure calculations. Its superconductivity, with $T_c$ = 5.5 K and upper critical field $μ_0H_\mathrm{c2}(0)$ $\sim$ 3.4 T, was characterized via electrical-resistivity- and magnetic-susceptibility measurements. The temperature-dependent superfluid density, obtained from transverse-field $μ$SR, suggests a fully-gapped superconducting state in TaReSi, with an energy gap $Δ_0$ = 0.79 meV and a magnetic penetration depth $λ_0$ = 562 nm. The absence of a spontaneous magnetization below $T_c$, as confirmed by zero-field $μ$SR, indicates a preserved time-reversal symmetry in the superconducting state. The density of states near the Fermi level is dominated by the Ta- and Re-5$d$ orbitals, which account for the relatively large band splitting due to the antisymmetric spin-orbit coupling. In its normal state, TaReSi behaves as a three-dimensional Kramers nodal-line semimetal, characterized by an hourglass-shaped dispersion protected by glide reflection. By combining non\-triv\-i\-al electronic bands with intrinsic superconductivity, TaReSi is a promising material for investigating the topological aspects of noncentrosymmetric superconductors.
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Submitted 27 May, 2023;
originally announced May 2023.
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Fully-gapped superconductivity with preserved time-reversal symmetry in NiBi$_3$ single crystals
Authors:
T. Shang,
J. Meng,
X. Y. Zhu,
H. Zhang,
B. C. Yu,
Z. X. Zhen,
Y. H. Wang,
Y. Xu,
Q. F. Zhan,
D. J. Gawryluk,
T. Shiroka
Abstract:
We report a study of NiBi$_3$ single crystals by means of electrical-resistivity-, magnetization-, and muon-spin rotation and relaxation ($μ$SR) measurements. As a single crystal, NiBi$_3$ adopts a needle-like shape and exhibits bulk superconductivity with $T_c \approx 4.1$ K. By applying magnetic fields parallel and perpendicular to the $b$-axis of NiBi$_3$, we establish that its lower- and upper…
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We report a study of NiBi$_3$ single crystals by means of electrical-resistivity-, magnetization-, and muon-spin rotation and relaxation ($μ$SR) measurements. As a single crystal, NiBi$_3$ adopts a needle-like shape and exhibits bulk superconductivity with $T_c \approx 4.1$ K. By applying magnetic fields parallel and perpendicular to the $b$-axis of NiBi$_3$, we establish that its lower- and upper critical fields, as well as the magnetic penetration depths show slightly different values, suggesting a weakly anisotropic superconductivity. In both cases, the zero-temperature upper critical fields are much smaller than the Pauli-limit value, indicating that the superconducting state is constrained by the orbital pair breaking. The temperature evolution of the superfluid density, obtained from transverse-field $μ$SR, reveals a fully-gapped superconductivity in NiBi$_3$, with a shared superconducting gap $Δ_0$ = 2.1 $k_\mathrm{B}$$T_c$ and magnetic penetration depths $λ_0$ = 223 and 210 nm for $H \parallel b$- and $H \perp b$, respectively. The lack of spontaneous fields below $T_c$ indicates that time-reversal symmetry is preserved in NiBi$_3$. The absence of a fast muon-spin relaxation and/or precession in the zero-field $μ$SR spectra definitely rules out any type of magnetic ordering in NiBi$_3$ single crystals. Overall, our investigation suggests that NiBi$_3$ behaves as a conventional $s$-type superconductor.
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Submitted 5 May, 2023;
originally announced May 2023.
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Evidence of unconventional pairing in the quasi two-dimensional CuIr$_2$Te$_4$ superconductor
Authors:
T. Shang,
Y. Chen,
W. Xie,
D. J. Gawryluk,
R. Gupta,
R. Khasanov,
X. Y. Zhu,
H. Zhang,
Z. X. Zhen,
B. C. Yu,
Z. Zhou,
Y. Xu,
Q. F. Zhan,
E. Pomjakushina,
H. Q. Yuan,
T. Shiroka
Abstract:
The CuIr$_{2-x}$Ru$_x$Te$_4$ superconductors (with a $T_c$ around 2.8 K) can host charge-density waves, whose onset and interplay with superconductivity are not well known at a microscopic level. Here, we report a comprehensive study of the $x$ = 0 and 0.05 cases, whose superconductivity was characterized via electrical-resistivity-, magnetization-, and heat-capacity measurements, while their micr…
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The CuIr$_{2-x}$Ru$_x$Te$_4$ superconductors (with a $T_c$ around 2.8 K) can host charge-density waves, whose onset and interplay with superconductivity are not well known at a microscopic level. Here, we report a comprehensive study of the $x$ = 0 and 0.05 cases, whose superconductivity was characterized via electrical-resistivity-, magnetization-, and heat-capacity measurements, while their microscopic superconducting properties were studied via muon-spin rotation and relaxation ($μ$SR). In CuIr$_{2-x}$Ru$_x$Te$_4$, both the temperature-dependent electronic specific heat and the superfluid density (determined via transverse-field $μ$SR) are best described by a two-gap (s+d)-wave model, comprising a nodeless gap and a gap with nodes. The multigap superconductivity is also supported by the temperature dependence of the upper critical field $H_\mathrm{c2}(T)$. However, under applied pressure, a charge-density-wave order starts to develop and, as a consequence, the superconductivity of CuIr$_2$Te$_4$ achieves a more conventional s-wave character. From a series of experiments, we provide ample evidence that the CuIr$_{2-x}$Ru$_x$Te$_4$ family belongs to the rare cases, where an unconventional superconducting pairing is found near a charge-density-wave quantum critical point.
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Submitted 13 October, 2022;
originally announced October 2022.
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Spin order and fluctuations in the EuAl$_4$ and EuGa$_4$ topological antiferromagnets: A $μ$SR study
Authors:
X. Y. Zhu,
H. Zhang,
D. J. Gawryluk,
Z. X. Zhen,
B. C. Yu,
S. L. Ju,
W. Xie,
D. M. Jiang,
W. J. Cheng,
Y. Xu,
M. Shi,
E. Pomjakushina,
Q. F. Zhan,
T. Shiroka,
T. Shang
Abstract:
We report on systematic muon-spin rotation and relaxation ($μ$SR) studies of the magnetic properties of EuAl$_4$ and EuGa$_4$ single crystals at a microscopic level. Transverse-field $μ$SR measurements, spanning a wide temperature range (from 1.5 to 50 K), show clear bulk AFM transitions, with an almost 100% magnetic volume fraction in both cases. Zero-field $μ$SR measurements, covering both the A…
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We report on systematic muon-spin rotation and relaxation ($μ$SR) studies of the magnetic properties of EuAl$_4$ and EuGa$_4$ single crystals at a microscopic level. Transverse-field $μ$SR measurements, spanning a wide temperature range (from 1.5 to 50 K), show clear bulk AFM transitions, with an almost 100% magnetic volume fraction in both cases. Zero-field $μ$SR measurements, covering both the AFM and the paramagnetic (PM) states, reveal internal magnetic fields $B_\mathrm{int}(0) = 0.33$ T and 0.89 T in EuAl$_4$ and EuGa$_4$, respectively. The transverse muon-spin relaxation rate $λ_\mathrm{T}$, a measure of the internal field distribution at the muon-stopping site, shows a contrasting behavior. In EuGa$_4$, it decreases with lowering the temperature, reaching its minimum at zero temperature, $λ_\mathrm{T}(0) = 0.71$ $μ$s$^{-1}$. In EuAl$_4$, it increases significantly below $T_\mathrm{N}$, to reach 58 $μ$s$^{-1}$ at 1.5 K, most likely reflecting the complex magnetic structure and the competing interactions in the AFM state of EuAl$_4$. In both compounds, the temperature-dependent longitudinal muon-spin relaxation $λ_\mathrm{L}(T)$, an indication of the rate of spin fluctuations, diverges near the onset of AFM order, followed by a significant drop at $T < T_\mathrm{N}$. In the AFM state, spin fluctuations are much stronger in EuAl$_4$ than in EuGa$_4$, while being comparable in the PM state. The evidence of robust spin fluctuations against the external magnetic fields provided by $μ$SR may offer new insights into the origin of the topological Hall effect and the possible magnetic skyrmions in the EuAl$_4$ and EuGa$_4$ compounds.
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Submitted 6 January, 2022;
originally announced January 2022.
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Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet
Authors:
H. Zhang,
X. Y. Zhu,
Y. Xu,
D. J. Gawryluk,
W. Xie,
S. L. Ju,
M. Shi,
T. Shiroka,
Q. F. Zhan,
E. Pomjakushina,
T. Shang
Abstract:
We report on systematic temperature- and magnetic field-dependent studies of the EuGa$_4$ binary compound, which crystallizes in a centrosymmetric tetragonal BaAl$_4$-type structure with space group $I4/mmm$. The electronic properties of EuGa$_4$ single crystals, with an antiferromagnetic (AFM) transition at $T_\mathrm{N} \sim 16.4$ K, were characterized via electrical resistivity and magnetizatio…
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We report on systematic temperature- and magnetic field-dependent studies of the EuGa$_4$ binary compound, which crystallizes in a centrosymmetric tetragonal BaAl$_4$-type structure with space group $I4/mmm$. The electronic properties of EuGa$_4$ single crystals, with an antiferromagnetic (AFM) transition at $T_\mathrm{N} \sim 16.4$ K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching $\sim 7 \times 10^4$ % at 2 K in a magnetic field of 9 T. In the AFM state, EuGa$_4$ undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. Below $T_\mathrm{N}$, in the $\sim$4-7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl$_4$-type structure, to which EuGa$_4$ and EuAl$_4$ belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands.
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Submitted 16 October, 2021;
originally announced October 2021.
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The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures
Authors:
T. Shang,
Q. F. Zhan,
H. L. Yang,
Z. H. Zuo,
Y. L. Xie,
L. P. Liu,
S. L. Zhang,
Y. Zhang,
H. H. Li,
B. M. Wang,
Y. H. Wu,
S. Zhang,
Run-Wei Li
Abstract:
We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the A…
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We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) in Pt, can be efficiently screened, and pure SMR can be derived by insertion of NiO. The dual roles of the NiO insertion including efficiently blocking the MPE and transporting the spin current from Pt to YIG are outstanding compared with other antiferromagnetic (AFM) metal or nonmagnetic metal (NM).
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Submitted 22 April, 2016; v1 submitted 12 April, 2016;
originally announced April 2016.
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Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers
Authors:
T. Shang,
H. L. Yang,
Q. F. Zhan,
Z. H. Zuo,
Y. L. Xie,
L. P. Liu,
S. L. Zhang,
Y. Zhang,
H. H. Li,
B. M. Wang,
Y. H. Wu,
S. Zhang,
Run-Wei Li
Abstract:
We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of…
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We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of 3 nm. The observed spin-Hall magnetoresistance (SMR) in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the entire thickness of the IrMn layer to interact with the YIG layer. The lack of conventional anisotropic magnetoresistance (CAMR) implies that the insertion of the IrMn layer between Pt and YIG efficiently suppresses the magnetic proximity effect (MPE) on induced Pt moments by YIG. Our results suggest that the dual roles of the InMn insertion in Pt/IrMn/YIG heterostructures are to block the MPE and to transport the spin current between Pt and YIG layers. We discuss possible mechanisms for the enhanced AHR.
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Submitted 11 April, 2016; v1 submitted 11 March, 2016;
originally announced March 2016.
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Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid
Authors:
T. Shang,
Q. F. Zhan,
H. L. Yang,
Z. H. Zuo,
Y. L. Xie,
H. H. Li,
L. P. Liu,
B. M. Wang,
Y. H. Wu,
S. Zhang,
Run-Wei Li
Abstract:
We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y$_3$Fe$_5$O$_{12}$ (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magnetoresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed…
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We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y$_3$Fe$_5$O$_{12}$ (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magnetoresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.
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Submitted 30 October, 2015;
originally announced October 2015.
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Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids
Authors:
T. Shang,
Q. F. Zhan,
H. L. Yang,
Z. H. Zuo,
Y. L. Xie,
Y. Zhang,
L. P. Liu,
B. M. Wang,
Y. H. Wu,
S. Zhang,
Run-Wei Li
Abstract:
We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline substrates [LaAlO$_3$ (LAO), (La,Sr)(Al,Ta)O$_3$ (LSAT), and SrTiO$_3$ (STO)] with (001) orientation. The physical properties of LaCoO$_3$ films were characterized…
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We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline substrates [LaAlO$_3$ (LAO), (La,Sr)(Al,Ta)O$_3$ (LSAT), and SrTiO$_3$ (STO)] with (001) orientation. The physical properties of LaCoO$_3$ films were characterized by the measurements of magnetic and transport properties. The LaCoO$_3$ films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 K to 85 K, below which the Pt/LCO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50 m$Ω$ and unconventional magnetoresistance (UCMR) ratio $Δ$$ρ$/$ρ_0$ about $1.2 \times 10^{-4}$, accompanied by the conventional magnetoresistance (CMR). The observed spin transport properties share some common features as well as some unique characteristics when compared with well-studied Y$_3$Fe$_5$O$_{12}$-based Pt thin films. Our findings call for new theories since the extraordinary Hall resistance and magnetoresistance cannot be consistently explained by the existing theories.
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Submitted 29 September, 2015;
originally announced September 2015.
