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Condensed Matter > Strongly Correlated Electrons

arXiv:1603.03578 (cond-mat)
[Submitted on 11 Mar 2016 (v1), last revised 11 Apr 2016 (this version, v2)]

Title:Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers

Authors:T. Shang, H. L. Yang, Q. F. Zhan, Z. H. Zuo, Y. L. Xie, L. P. Liu, S. L. Zhang, Y. Zhang, H. H. Li, B. M. Wang, Y. H. Wu, S. Zhang, Run-Wei Li
View a PDF of the paper titled Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers, by T. Shang and 12 other authors
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Abstract:We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of 3 nm. The observed spin-Hall magnetoresistance (SMR) in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the entire thickness of the IrMn layer to interact with the YIG layer. The lack of conventional anisotropic magnetoresistance (CAMR) implies that the insertion of the IrMn layer between Pt and YIG efficiently suppresses the magnetic proximity effect (MPE) on induced Pt moments by YIG. Our results suggest that the dual roles of the InMn insertion in Pt/IrMn/YIG heterostructures are to block the MPE and to transport the spin current between Pt and YIG layers. We discuss possible mechanisms for the enhanced AHR.
Comments: 6 pages, 4 figures
Subjects: Strongly Correlated Electrons (cond-mat.str-el); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1603.03578 [cond-mat.str-el]
  (or arXiv:1603.03578v2 [cond-mat.str-el] for this version)
  https://doi.org/10.48550/arXiv.1603.03578
arXiv-issued DOI via DataCite
Journal reference: J. Appl. Phys. 120.133901 (2016)
Related DOI: https://doi.org/10.1063/1.4964114
DOI(s) linking to related resources

Submission history

From: Tian Shang [view email]
[v1] Fri, 11 Mar 2016 09:45:19 UTC (1,196 KB)
[v2] Mon, 11 Apr 2016 14:54:57 UTC (1,159 KB)
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