Showing 1–18 of 18 results for author: Yassievich, I N

Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix

Authors: A. V. Belolipetsky, M. O. Nestoklon, I. N. Yassievich

Abstract: In the empirical tight-binding approach we study the electronic states in spherical SiGe nanocrystals embedded in SiO2 matrix. The energy and valley structure is obtained as a function of Ge composition and nanocrystal size. The calculations show that the mixing of hot electrons in the nanocrystal with electrons in wide band gap matrix is possible and this mixing strongly depends on the Ge composi… ▽ More In the empirical tight-binding approach we study the electronic states in spherical SiGe nanocrystals embedded in SiO2 matrix. The energy and valley structure is obtained as a function of Ge composition and nanocrystal size. The calculations show that the mixing of hot electrons in the nanocrystal with electrons in wide band gap matrix is possible and this mixing strongly depends on the Ge composition in the nanocrystal. △ Less

Submitted 14 January, 2019; originally announced January 2019.

Comments: 5 pages, 5 figures

Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals

Authors: M. O. Nestoklon, S. V. Goupalov, R. I. Dzhioev, O. S. Ken, V. L. Korenev, Yu. G. Kusrayev, V. F. Sapega, C. de Weerd, L. Gomez, T. Gregorkiewicz, Junhao Lin, Kazutomo Suenaga, Yasufumi Fujiwara, L. B. Matyushkin, I. N. Yassievich

Abstract: We demonstrate the optical orientation and alignment of excitons in a two-dimensional layer of CsPbI$_3$ perovskite nanocrystals prepared by colloidal synthesis and measure the anisotropic exchange splitting of exciton levels in the nanocrystals. From the experimental data at low temperature (2K), we obtain the average value of anisotropic splitting of bright exciton states of the order of 120μeV.… ▽ More We demonstrate the optical orientation and alignment of excitons in a two-dimensional layer of CsPbI$_3$ perovskite nanocrystals prepared by colloidal synthesis and measure the anisotropic exchange splitting of exciton levels in the nanocrystals. From the experimental data at low temperature (2K), we obtain the average value of anisotropic splitting of bright exciton states of the order of 120μeV. Our calculations demonstrate that there is a significant contribution to the splitting due to the nanocrystal shape anisotropy for all inorganic perovskite nanocrystrals. △ Less

Submitted 2 February, 2018; originally announced February 2018.

Comments: 10 pages

Journal ref: Phys. Rev. B 97, 235304 (2018)

Phonon decay in silicon nanocrystals

Authors: A. A. Prokofiev, A. N. Poddubny, I. N. Yassievich

Abstract: The decay of the optical phonon into the two phonons of smaller energy is calculated for Si nanocrystals. The rate of the process is in the range of 1 to 10 ps. Such anharmonic phonon decay may control the energy relaxation rate of excited carriers in Si/SiO$_2$ nanocrystals. Relevance of the phonon decay to the experimentally observed hot carrier photoluminescence is discussed. The decay of the optical phonon into the two phonons of smaller energy is calculated for Si nanocrystals. The rate of the process is in the range of 1 to 10 ps. Such anharmonic phonon decay may control the energy relaxation rate of excited carriers in Si/SiO$_2$ nanocrystals. Relevance of the phonon decay to the experimentally observed hot carrier photoluminescence is discussed. △ Less

Submitted 5 April, 2013; originally announced April 2013.

Comments: 4 pages, 4 figures

Optical transitions and energy relaxation of hot carriers in Si nanocrystals

Authors: A. N. Poddubny, A. A. Prokofiev, I. N. Yassievich

Abstract: Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and holes is found to be the fastest process in the system. However the energy relaxation of hot electron-hole pair is governed by the single optical phonon emission… ▽ More Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and holes is found to be the fastest process in the system. However the energy relaxation of hot electron-hole pair is governed by the single optical phonon emission. For a considerable number of states in small nanocrystals single-phonon processes are ruled out by energy conservation law. △ Less

Submitted 1 October, 2010; originally announced October 2010.

Comments: 3 pages, 4 figures

Direct bandgap optical transitions in Si nanocrystals

Authors: A. A. Prokofiev, A. S. Moskalenko, I. N. Yassievich, W. D. A. M. de Boer, D. Timmerman, H. Zhang, W. J. Buma, T. Gregorkiewicz

Abstract: The effect of quantum confinement on the direct bandgap of spherical Si nanocrystals has been modelled theoretically. We conclude that the energy of the direct bandgap at the $Γ$-point decreases with size reduction: quantum confinement enhances radiative recombination across the direct bandgap and introduces its "red" shift for smaller grains. We postulate to identify the frequently reported eff… ▽ More The effect of quantum confinement on the direct bandgap of spherical Si nanocrystals has been modelled theoretically. We conclude that the energy of the direct bandgap at the $Γ$-point decreases with size reduction: quantum confinement enhances radiative recombination across the direct bandgap and introduces its "red" shift for smaller grains. We postulate to identify the frequently reported efficient blue emission (F-band) from Si nanocrystals with this zero-phonon recombination. In a dedicated experiment, we confirm the "red" shift of the F-band, supporting the proposed identification. △ Less

Submitted 5 February, 2010; v1 submitted 27 January, 2009; originally announced January 2009.

Journal ref: JETP Letters (Pis'ma v ZhETF), vol. 90, issue 12, p. 856 (2009)

Electron-phonon Interaction in Non-polar Quantum Dots Induced by the Amorphous Polar Environment

Authors: A. N. Poddubny, S. V. Goupalov, V. I. Kozub, I. N. Yassievich

Abstract: We propose a mechanism of energy relaxation for carriers confined in a non-polar quantum dot surrounded by an amorphous polar environment. The carrier transitions are due to their interaction with the oscillating electric field induced by the local vibrations in the surrounding amorphous medium. We demonstrate that this mechanism controls energy relaxation for electrons in Si nanocrystals embedd… ▽ More We propose a mechanism of energy relaxation for carriers confined in a non-polar quantum dot surrounded by an amorphous polar environment. The carrier transitions are due to their interaction with the oscillating electric field induced by the local vibrations in the surrounding amorphous medium. We demonstrate that this mechanism controls energy relaxation for electrons in Si nanocrystals embedded in a SiO$_2$ matrix, where conventional mechanisms of electron-phonon interaction are not efficient. △ Less

Submitted 7 August, 2008; originally announced August 2008.

Comments: 4 pages, 2 figures, submitted to Phys. Rev. B

Energy transfer processes in Er-doped SiO2 sensitized with Si nanocrystals

Authors: I. Izeddin, D. Timmerman, T. Gregorkiewicz, A. S. Moskalenko, A. A. Prokofiev, I. N. Yassievich, M. Fujii

Abstract: We present a high-resolution photoluminescence study of Er-doped SiO2 sensitized with Si nanocrystals (Si NCs). Emission bands originating from recombination of excitons confined in Si NCs and of internal transitions within the 4f-electron core of Er3+ ions, and a band centered at lambda = 1200nm have been identified. Their kinetics have been investigated in detail. Based on these measurements,… ▽ More We present a high-resolution photoluminescence study of Er-doped SiO2 sensitized with Si nanocrystals (Si NCs). Emission bands originating from recombination of excitons confined in Si NCs and of internal transitions within the 4f-electron core of Er3+ ions, and a band centered at lambda = 1200nm have been identified. Their kinetics have been investigated in detail. Based on these measurements, we present a comprehensive model for energy transfer mechanisms responsible for light generation in this system. A unique picture of energy flow between subsystems of Er3+ and Si NCs is developed, yielding truly microscopic information on the sensitization effect and its limitations. In particular, we show that most of the Er3+ ions available in the system are participating in the energy exchange. The long standing problem of apparent loss of optical activity of majority of Er dopants upon sensitization with Si NCs is clarified and assigned to appearance of a very efficient energy exchange mechanism between Si NCs and Er3+ ions. Application potential of SiO2:Er sensitized by Si NCs is discussed in view of the newly acquired microscopic insight. △ Less

Submitted 5 June, 2008; originally announced June 2008.

Comments: 30 pages 13 figures

Carrier relaxation in Si/SiO$_2$ quantum dots

Authors: A. A. Prokofiev, S. V. Goupalov, A. S. Moskalenko, A. N. Poddubny, I. N. Yassievich

Abstract: Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such transitions. The probability of intraband transition of a confined hole emitting several optical phonons is estimated. Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such transitions. The probability of intraband transition of a confined hole emitting several optical phonons is estimated. △ Less

Submitted 22 May, 2008; originally announced May 2008.

Comments: 8 pages, 2 figures, submitted as an extended abstract to the E-MRS Spring Meeting 2008

Single-particle states in spherical Si/SiO$_2$ quantum dots

Authors: A. S. Moskalenko, J. Berakdar, A. A. Prokofiev, I. N. Yassievich

Abstract: We calculate ground and excited electron and hole levels in spherical Si quantum dots inside SiO$_2$ in a multiband effective mass approximation. Luttinger Hamiltonian is used for holes and the strong anisotropy of the conduction electron effective mass in Si is taken into account. As boundary conditions for electron and hole wave functions we use continuity of the wave functions and the velocit… ▽ More We calculate ground and excited electron and hole levels in spherical Si quantum dots inside SiO$_2$ in a multiband effective mass approximation. Luttinger Hamiltonian is used for holes and the strong anisotropy of the conduction electron effective mass in Si is taken into account. As boundary conditions for electron and hole wave functions we use continuity of the wave functions and the velocity density at the boundary of the quantum dots. △ Less

Submitted 14 January, 2007; v1 submitted 8 September, 2006; originally announced September 2006.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 76, 085427 (2007)

Spin-dependent resonant tunneling in symmetrical double-barrier structure

Authors: M. M. Glazov, P. S. Alekseev, M. A. Odnoblyudov, V. M. Chistyakov, S. A. Tarasenko, I. N. Yassievich

Abstract: A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field, (ii) generation of an in-plane electric current unde… ▽ More A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field, (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures. △ Less

Submitted 8 October, 2004; originally announced October 2004.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 71, 155313 (2005)

Spin injection and detection by resonant tunneling structure

Authors: M. M. Glazov, S. A. Tarasenko, P. S. Alekseev, M. A. Odnoblyudov, V. M. Chistyakov, I. N. Yassievich

Abstract: A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-p… ▽ More A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-polarized carriers through the RTD is accompanied by generation of an in-plane electric current. The microscopic origin of the effects is the spin-orbit coupling-induced splitting of the resonant level. △ Less

Submitted 8 June, 2004; originally announced June 2004.

Comments: Proc. 12th Int. Symp. "Nanostructures: Physics and Technology" (June 2004, St. Petersburg, Russia), 3 pages

Tunneling spin-galvanic effect

Authors: S. A. Tarasenko, V. I. Perel', I. N. Yassievich

Abstract: It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunne… ▽ More It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunneling spin-galvanic' effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wavevector of electrons. △ Less

Submitted 6 October, 2003; originally announced October 2003.

Comments: 3 pages, 2 figures

Journal ref: Revised, Phys. Rev. Lett. 93, 056601 (2004)

Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation

Authors: S. D. Ganichev, S. N. Danilov, M. Sollinger, J. Zimmermann, A. S. Moskalenko, V. I. Perel, I. N. Yassievich, C. Back, W. Prettl

Abstract: A suppression of tunnelling ionization of deep impurities in terahertz frequency electric fields by a magnetic field is observed. It is shown that the ionization probability at external magnetic field, B, oriented perpendicular to the electric field of terahertz radiation, E, is substantially smaller than that at B || E. The effect occurs at low temperatures and high magnetic fields. A suppression of tunnelling ionization of deep impurities in terahertz frequency electric fields by a magnetic field is observed. It is shown that the ionization probability at external magnetic field, B, oriented perpendicular to the electric field of terahertz radiation, E, is substantially smaller than that at B || E. The effect occurs at low temperatures and high magnetic fields. △ Less

Submitted 19 August, 2003; originally announced August 2003.

Donor states in modulation-doped Si/SiGe heterostructures

Authors: A. Blom, M. A. Odnoblyudov, I. N. Yassievich, K. -A. Chao

Abstract: We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also the energy width of the resonant states which may appear when a localized state becomes degenerate with the continuous quantum well subbands. The approach is n… ▽ More We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also the energy width of the resonant states which may appear when a localized state becomes degenerate with the continuous quantum well subbands. The approach is non-variational, and we are therefore also able to evaluate the wave functions. This is used to calculate the optical absorption spectrum, which is strongly non-isotropic due to the selection rules. The results obtained from calculations for Si/Si$_{1-x}$Ge$_x$ quantum wells allow us to present the general behavior of the impurity states, as the donor position is varied from the center of the well to deep inside the barrier. The influence on the donor ground state from both the central-cell effect and the strain arising from the lattice mismatch is carefully considered. △ Less

Submitted 28 June, 2004; v1 submitted 14 February, 2003; originally announced February 2003.

Comments: 17 pages, 10 figures

Journal ref: Physical Review B vol 68, 165338 (2003)

Tunneling ionization of deep centers in high frequency electric fields

Authors: S. D. Ganichev, I. N. Yassievich, W. Prettl

Abstract: Experimental and theoretical work on the ionization of deep impurity centers in the alternating terahertz field of high-intensity far-infrared laser radiation, with photon energies tens of times lower than the impurity ionization energy, is reviewed. It is shown that impurity ionization is due to phonon-assisted tunneling which proceeds at high electric field strengths into direct tunneling with… ▽ More Experimental and theoretical work on the ionization of deep impurity centers in the alternating terahertz field of high-intensity far-infrared laser radiation, with photon energies tens of times lower than the impurity ionization energy, is reviewed. It is shown that impurity ionization is due to phonon-assisted tunneling which proceeds at high electric field strengths into direct tunneling without involving phonons. In the quasi-static regime of low frequencies the tunneling probability is independent on frequency. Carrier emission is accomplished by defect tunneling in configuration space and electron tunneling through the potential well formed by the attractive force of the impurity and the externally applied electric field. The dependence of the ionization probability on the electric field strength permits to determine defect tunneling times, the structure of the adiabatic potentials of the defect, and the Huang-Rhys parameters of electron-phonon interaction. Raising the frequency leads to an enhancement of tunneling ionization and the tunneling probability gets frequency dependent. The transition from the frequency independent quasi-static limit to frequency dependent tunneling is determined by the tunneling time which is in the case of phonon asissted tunneling controlled by the temperature. This transition to the high-frequency limit represents the boundary between semiclassical physics, where the radiation field has a classical amplitude, and full quantum mechanics where the radiation field is quantized and impurity ionization is caused by multi-photon processes. △ Less

Submitted 22 January, 2003; originally announced January 2003.

Journal ref: J. Phys.:Condens.Matter 14 (2002) R1263

Spin-dependent tunnelling through a symmetric barrier

Authors: V. I. Perel', S. A. Tarasenko, I. N. Yassievich, S. D. Ganichev, V. V. Bel'kov, W. Prettl

Abstract: The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunnelling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can… ▽ More The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunnelling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers. △ Less

Submitted 9 January, 2003; v1 submitted 8 January, 2003; originally announced January 2003.

Comments: 3 pages, Submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 67, 201304(R) (2003)

Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

Authors: S. D. Ganichev, H. Ketterl, W. Prettl, I. A. Merkulov, V. I. Perel, I. N. Yassievich, A. V. Malyshev

Abstract: A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g-factor in the… ▽ More A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g-factor in the order of several tens depending on impurity. △ Less

Submitted 23 November, 2000; originally announced November 2000.

Comments: 4 pages, 4 figures

Population Inversion Induced by Resonant States in Semiconductors

Authors: M. A. Odnoblyudov, I. N. Yassievich, M. S. Kagan, Yu. M. Galperin, X. H. Wang, K. A. Chao

Abstract: We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been r… ▽ More We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been recently observed. △ Less

Submitted 25 November, 1998; originally announced November 1998.

Comments: 4 pages, 3 figures submitted to Phys.Rev.Letters