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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:cond-mat/0301098 (cond-mat)
[Submitted on 8 Jan 2003 (v1), last revised 9 Jan 2003 (this version, v2)]

Title:Spin-dependent tunnelling through a symmetric barrier

Authors:V.I. Perel', S.A. Tarasenko, I.N. Yassievich, S.D. Ganichev, V.V. Bel'kov, W. Prettl
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Abstract: The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunnelling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.
Comments: 3 pages, Submitted to Phys. Rev. B
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Disordered Systems and Neural Networks (cond-mat.dis-nn)
Cite as: arXiv:cond-mat/0301098 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0301098v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0301098
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 67, 201304(R) (2003)
Related DOI: https://doi.org/10.1103/PhysRevB.67.201304
DOI(s) linking to related resources

Submission history

From: S. A. Tarasenko [view email]
[v1] Wed, 8 Jan 2003 14:25:41 UTC (110 KB)
[v2] Thu, 9 Jan 2003 09:44:24 UTC (99 KB)
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