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Nonvolatile Switching of Magnetism via Gate-Induced Sliding in Tetralayer Graphene
Authors:
Daniel Brandon,
Tixuan Tan,
Yiwen Ai,
Peter Golemis,
Akshat Gandhi,
Lujin Min,
Kenji Watanabe,
Takashi Taniguchi,
Trithep Devakul,
Kenji Yasuda
Abstract:
Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arrangement hosts correlated and topological electronic phases, which are absent in conventional Bernal stacking. Here, we demonstrate a sliding-induced first-order structural phase transition between Bernal and rhombohedra…
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Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arrangement hosts correlated and topological electronic phases, which are absent in conventional Bernal stacking. Here, we demonstrate a sliding-induced first-order structural phase transition between Bernal and rhombohedral tetralayer graphene driven by gate voltages. Through transport measurement, we observe bistable switching between a Bernal-dominant state and a rhombohedral-Bernal mixed state across a wide space of the gate-voltage phase diagram. The structural phase transition results in nonvolatile switching between a paramagnet and a ferromagnet accompanied by the anomalous Hall effect. The sign reversal of the anomalous Hall effect under opposite displacement fields suggests that it may originate from domain boundaries between the Bernal and rhombohedral regions. Our discovery paves the way for on-demand toggling of quantum phases based on the sliding phase transition of 2D materials and offers a playground to explore unconventional physics at the stacking domain boundaries.
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Submitted 30 September, 2025;
originally announced October 2025.
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Revealing Hidden Antiparallel Domains in Hexagonal Boron Nitride
Authors:
Yeri Lee,
Juseung Oh,
Kyung Yeol Ma,
Seung Jin Lee,
Eui Young Jung,
Yani Wang,
Kenji Watanabe,
Takashi Taniguchi,
Hailin Peng,
Hiroki Ago,
Ki Kang Kim,
Hyeon Suk Shin,
Sunmin Ryu
Abstract:
Hexagonal boron nitride (hBN) supports a wide range of two-dimensional (2D) technologies, yet assessing its crystalline quality over large areas remains a fundamental challenge. Both antiparallel domains, an intrinsic outcome of epitaxy on high-symmetry substrates, and orientational domains have long evaded optical detection. Here, we show that interferometric second-harmonic generation (SHG) pola…
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Hexagonal boron nitride (hBN) supports a wide range of two-dimensional (2D) technologies, yet assessing its crystalline quality over large areas remains a fundamental challenge. Both antiparallel domains, an intrinsic outcome of epitaxy on high-symmetry substrates, and orientational domains have long evaded optical detection. Here, we show that interferometric second-harmonic generation (SHG) polarimetry provides a powerful, non-destructive probe of lattice orientation and structural integrity in chemical vapor deposition-grown hBN. This approach reveals the ubiquitous formation of antiparallel domains and quantifies their impact on crystalline order. SHG intensity also emerges as a direct optical metric of domain disorder, spanning three orders of magnitude across films produced by ten different growth routes. Correlation with Raman spectroscopy establishes a unified framework for evaluating crystalline quality. Beyond hBN, this method offers a high-throughput route to wide-area structural imaging in other non-centrosymmetric 2D materials, advancing their deployment in electronics, photonics, and quantum technologies.
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Submitted 30 September, 2025;
originally announced September 2025.
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Magnetoelectric Switching of Competing Magnetic Orders in Rhombohedral Graphene
Authors:
Kilian Krötzsch,
Kenji Watanabe,
Takashi Taniguchi,
Arnaud Magrez,
Mitali Banerjee
Abstract:
A finite Hall conductance under zero magnetic field implies time reversal symmetry (TRS) breaking due to magnetic ordering. In rhombohedral (RH) stacked graphene, the angular momentum breaking TRS can result from the orbital degree of freedom at the $K$ and $K'$ valleys. This leads to valley polarization and occupation-dependent anomalous Hall resistance (AHR) due to the chirality in Berry curvatu…
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A finite Hall conductance under zero magnetic field implies time reversal symmetry (TRS) breaking due to magnetic ordering. In rhombohedral (RH) stacked graphene, the angular momentum breaking TRS can result from the orbital degree of freedom at the $K$ and $K'$ valleys. This leads to valley polarization and occupation-dependent anomalous Hall resistance (AHR) due to the chirality in Berry curvature between the valleys. We report magnetoelectric control of orbital magnetic order in crystalline rhombohedral hexalayer graphene (RHG), achieved without the introduction of a moiré superlattice. At moderate displacement fields and low carrier densities, we observe a non-volatile and hysteretic AHR that can be electrically toggled by sweeping either the carrier density or the displacement field. Upon the application of small perpendicular magnetic fields, the system reveals a characteristic double sign reversal of the AHR, indicating a competition between distinct magnetic ground states. This interplay between valley polarization, orbital magnetism, and electric and magnetic field tuning demonstrates the rich multiferroic behavior of RHG. Our findings present crystalline RHG as a minimal, tunable platform for studying symmetry-breaking phases and magnetic order in flat-band systems, offering insight into the coupling between electronic structure and magnetoelectric response.
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Submitted 29 September, 2025;
originally announced September 2025.
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Strong Correlations and Superconductivity in the Supermoiré Lattice
Authors:
Zekang Zhou,
Cheng Shen,
Kryštof Kolář,
Kenji Watanabe,
Takashi Taniguchi,
Cyprian Lewandowski,
Mitali Banerjee
Abstract:
The supermoiré lattice, arising from the interference of multiple moiré patterns, dramatically reshapes the electronic band structure by introducing new minibands and modifying band dispersion. Concurrently, strong electronic interactions within moiré flat bands lead to the emergence of various correlated states. However, the impact of the supermoiré lattice on the flat band systems with strong in…
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The supermoiré lattice, arising from the interference of multiple moiré patterns, dramatically reshapes the electronic band structure by introducing new minibands and modifying band dispersion. Concurrently, strong electronic interactions within moiré flat bands lead to the emergence of various correlated states. However, the impact of the supermoiré lattice on the flat band systems with strong interactions remains largely unexplored. Here, we report the existence of the supermoiré lattice in the mirror-symmetry-broken twisted trilayer graphene, elucidating its role in generating mini-flat bands and mini-Dirac bands. Furthermore, we demonstrate interaction-induced symmetry-broken phases in the supermoiré mini-flat bands alongside the cascade of superconductor-insulator transitions enabled by the supermoiré lattice. Our work shows that robust superconductivity can exist in the mirror-symmetry-broken TTG and underscores the significance of the supermoiré lattice as an additional degree of freedom for tuning the electronic properties in twisted multilayer systems, sheds light on the correlated quantum phases such as superconductivity in the original moiré flat bands, and highlights the potential of using the supermoiré lattice to design and simulate novel quantum phases.
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Submitted 29 September, 2025;
originally announced September 2025.
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Dipolar Interfacial Excitons in Lateral Semiconductor Heterostructures
Authors:
Elie Vandoolaeghe,
Francesco Fortuna,
Suman Kumar Chakraborty,
Biswajeet Nayak,
Takashi Taniguchi,
Kenji Watanabe,
Prasana K. Sahoo,
Thibault Chervy,
Puneet A. Murthy
Abstract:
Interfaces between materials or phases -- whether in condensed matter systems, biological membranes, or catalytic surfaces -- are rich with phenomena that are fundamentally distinct from those present in the bulk. In some cases, interfaces host quasiparticles, such as surface plasmons or Majorana fermions, which can significantly influence the material properties. Here, we investigate a unique 1D…
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Interfaces between materials or phases -- whether in condensed matter systems, biological membranes, or catalytic surfaces -- are rich with phenomena that are fundamentally distinct from those present in the bulk. In some cases, interfaces host quasiparticles, such as surface plasmons or Majorana fermions, which can significantly influence the material properties. Here, we investigate a unique 1D interface formed between two monolayer 2D semiconductors, MoSe2, and WSe2, and unambiguously observe a new type of excitonic quasiparticle that resides exclusively at the boundary. Our optical measurements reveal several remarkable properties of this interfacial exciton. First, it possesses an in-plane dipole moment with exceptionally large dipole lengths of 2nm. The emission spectrum reveals narrow discrete states, indicating strong quantum confinement of the center-of-mass motion across the interface. Power-dependent measurements show a sublinear saturation behavior, reflecting interactions between dipolar excitons in this low-dimensional system. Moreover, the exciton displays striking sensitivity to charge carriers due to its dipolar character. Our results introduce a new platform for exploring interacting 1D dipolar bosonic systems with unique quantum properties and open pathways for novel optoelectronic devices, including applications in nonlinear quantum photonics.
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Submitted 29 September, 2025;
originally announced September 2025.
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Uniaxial negative thermal expansion in a weak-itinerant-ferromagnetic phase of CoZr$_{2}$H$_{3.49}$
Authors:
Yuto Watanabe,
Kota Suzuki,
Takayoshi Katase,
Akira Miura,
Aichi Yamashita,
Yoshikazu Mizuguchi
Abstract:
We discovered unique uniaxial negative thermal expansion (NTE) behavior for a weak-itinerant-ferromagnetic phase of CoZr$_{2}$H$_{3.49}$. CoZr$_{2}$ is known as a superconductor exhibiting uniaxial NTE along the $c$-axis, which is called anomalous thermal expansion (ATE). Additionally, CoZr$_{2}$ is also known as a well-absorbent of hydrogen, and hydrogen insertion raises weak-itinerant ferromagne…
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We discovered unique uniaxial negative thermal expansion (NTE) behavior for a weak-itinerant-ferromagnetic phase of CoZr$_{2}$H$_{3.49}$. CoZr$_{2}$ is known as a superconductor exhibiting uniaxial NTE along the $c$-axis, which is called anomalous thermal expansion (ATE). Additionally, CoZr$_{2}$ is also known as a well-absorbent of hydrogen, and hydrogen insertion raises weak-itinerant ferromagnetism instead of superconductivity. However, the influence of hydrogen insertion on ATE behavior in this system is still unclear. To investigate it, we performed powder synchrotron X-ray diffraction (SXRD) for CoZr$_{2}$H$_{3.49}$. Through Arrott plots analysis, we determined the Curie temperature ($T_{\mathrm{C}}$) to be 139 K, and the Rhodes-Wohlfarth ratio was estimated to be 3.49, which clearly exceeds 1, suggesting the itinerancy of emerging ferromagnetism. Temperature dependencies of lattice constants $a$ and $c$ were extracted from powder SXRD analyses, and we revealed that lattice constant $c$ exhibited NTE behavior below $T_{\mathrm{C}}$. The uniaxial NTE behavior along the $c$-axis can be understood by sharpening an antibonding Co3$dz^{2}$ partial density of states near the Fermi level, linked to the expansion of a one-dimensional Co-Co chain running parallel to the $c$-axis.
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Submitted 25 September, 2025;
originally announced September 2025.
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Non-universal localization transition in the quantum Hall effect probed through broken-symmetry states of graphene
Authors:
Aifei Zhang,
Torsten Röper,
Manjari Garg,
Kenji Watanabe,
Takashi Taniguchi,
Carles Altimiras,
Patrice Roche,
Erwann Bocquillon,
Olivier Maillet,
François D. Parmentier
Abstract:
The quantum Hall effect hosts quantum phase transitions in which the localization length, that is the size of disorder-induced bulk localized states, is governed by universal scaling from percolation theory. However, this universal character is not systematically observed in experiments, including very recent ones in extremely clean devices. Here we explore this non-universality by systematically…
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The quantum Hall effect hosts quantum phase transitions in which the localization length, that is the size of disorder-induced bulk localized states, is governed by universal scaling from percolation theory. However, this universal character is not systematically observed in experiments, including very recent ones in extremely clean devices. Here we explore this non-universality by systematically measuring the localization length in broken-symmetry quantum Hall states of graphene. Depending on the nature and gap size of these states, we observe differences of up to a tenfold in the minimum localization length, accompanied by clear deviations from universal scaling. Our results, as well as the previously observed non-universality, are fully captured by a simple picture based on the co-existence of localized states from two successive sub-Landau levels.
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Submitted 24 September, 2025;
originally announced September 2025.
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Non-ohmic to ohmic crossover in the breakdown of the quantum Hall states in graphene under broadband excitations
Authors:
Torsten Röper,
Aifei Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Olivier Maillet,
François D. Parmentier,
Erwann Bocquillon
Abstract:
Graphene, through the coexistence of large cyclotron gaps and small spin and valley gaps, offers the possibility to study the breakdown of the quantum Hall effect across a wide range of energy scales. In this work, we investigate the breakdown of the QHE in high-mobility graphene Corbino devices under broadband excitation ranging from DC up to 10 GHz. We find that the conductance is consistently d…
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Graphene, through the coexistence of large cyclotron gaps and small spin and valley gaps, offers the possibility to study the breakdown of the quantum Hall effect across a wide range of energy scales. In this work, we investigate the breakdown of the QHE in high-mobility graphene Corbino devices under broadband excitation ranging from DC up to 10 GHz. We find that the conductance is consistently described by variable range hopping (VRH) and extract the hopping energies from both temperature and field-driven measurements. Using VRH thermometry, we are able to distinguish between a cold and hot electron regime, which are dominated by non-ohmic VRH and Joule heating, respectively. Our results demonstrate that breakdown in the quantum Hall regime of graphene is governed by a crossover from non-ohmic, field-driven VRH to ohmic, Joule-heating-dominated transport.
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Submitted 24 September, 2025;
originally announced September 2025.
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Quantum oscillations between excitonic and quantum spin Hall insulators in moiré WSe2
Authors:
Zhongdong Han,
Yiyu Xia,
Kenji Watanabe,
Takashi Taniguchi,
Kin Fai Mak,
Jie Shan
Abstract:
Quantum spin Hall insulators (QSHIs) and excitonic insulators (EIs) are prototypical topological and correlated states of matter, respectively. The topological phase transition between the two has attracted much theoretical interest but experimental studies have been hindered by the availability of tunable materials that can access such a transition. Here, by utilizing the interaction-enhanced g-f…
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Quantum spin Hall insulators (QSHIs) and excitonic insulators (EIs) are prototypical topological and correlated states of matter, respectively. The topological phase transition between the two has attracted much theoretical interest but experimental studies have been hindered by the availability of tunable materials that can access such a transition. Here, by utilizing the interaction-enhanced g-factor and the flat moiré bands in twisted bilayer WSe2 (tWSe2), we realize tunable electron-like and hole-like Landau levels (LLs) in the opposite valleys of tWSe2 under a perpendicular magnetic field. At half-band-filling, which corresponds to electron-hole charge neutrality, periodic oscillations between QSHIs (for fully filled LLs) and EIs (for half-filled LLs) are observed due to the interplay between the cyclotron energy and the intervalley correlation; QSHIs with up to four pairs of helical edge states can be resolved. We further analyze the effect of Fermi surface nesting on the stability of EIs via electric field-tuning of the moiré band structure. Our results demonstrate a novel QSHI-to-EI topological phase transition and provide a comprehensive understanding of the fermiology of tWSe2.
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Submitted 23 September, 2025;
originally announced September 2025.
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Gate-tunable chiral spin mode in WSe2/WS2 moiré superlattices
Authors:
Zhexu Shan,
Wenjian Su,
Kenji Watanabe,
Takashi Taniguchi,
Shiyao Zhu,
Yuanfeng Xu,
Yanhao Tang
Abstract:
The interplay between many-body and spin-orbit effects (SOC) can lead to novel phenomena in solids. Chiral spin modes (CSM) are collective spin excitations that arise from such interplay and connect states with opposite chirality, which, however, have been rarely observed. Here, we report a gate-tunable CSM that occurs between conduction SOC-split minibands in near-0°-twisted WSe2/WS2 bilayers. Th…
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The interplay between many-body and spin-orbit effects (SOC) can lead to novel phenomena in solids. Chiral spin modes (CSM) are collective spin excitations that arise from such interplay and connect states with opposite chirality, which, however, have been rarely observed. Here, we report a gate-tunable CSM that occurs between conduction SOC-split minibands in near-0°-twisted WSe2/WS2 bilayers. This mode manifests as a sharp resonance with giant Raman efficiency in the pseudovector-symmetry channel of the Raman spectra. By varying fillings, the CSM transitions from chiral spin exciton to excitonic polaron. The spin-flip nature is directly confirmed by the Zeeman effect. Moreover, the filling dependence compellingly evidences a charge-transfer insulator at filling of one. Our results demonstrate transition-metal-dichalcogenides moiré superlattices as a fertile platform for exploring exotic low-lying collective excitations.
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Submitted 19 September, 2025;
originally announced September 2025.
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Supersonic flow and hydraulic jump in an electronic de Laval nozzle
Authors:
Johannes Geurs,
Tatiana A. Webb,
Yinjie Guo,
Itai Keren,
Jack H. Farrell,
Jikai Xu,
Kenji Watanabe,
Takashi Taniguchi,
Dmitri N. Basov,
James Hone,
Andrew Lucas,
Abhay Pasupathy,
Cory R. Dean
Abstract:
In very clean solid-state systems, where carrier-carrier interactions dominate over any other scattering mechanisms, the flow of electrons can be described within a hydrodynamic framework. In these cases, analogues of viscous fluid phenomena have been experimentally observed. However, experimental studies of electron hydrodynamics have so far been limited to the low velocity, linear response regim…
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In very clean solid-state systems, where carrier-carrier interactions dominate over any other scattering mechanisms, the flow of electrons can be described within a hydrodynamic framework. In these cases, analogues of viscous fluid phenomena have been experimentally observed. However, experimental studies of electron hydrodynamics have so far been limited to the low velocity, linear response regime. At velocities approaching the speed of sound, the electronic fluid is expected to exhibit compressible behaviour where nonlinear effects and discontinuities such as shocks and choked flow have long been predicted. This compressible regime remains unexplored in electronic systems, despite its promise of strongly nonlinear flow phenomena. Here, we demonstrate compressible electron flow in bilayer graphene through an electronic de Laval nozzle, a structure that accelerates charge carriers past the electronic speed of sound, until they slow down suddenly in a shock. Discontinuities in transport measurements and local flattening of potential in Kelvin probe measurements are consistent with a viscous electron shock front and the presence of supersonic electron flow, and are not consistent with Ohmic or ballistic flow. Breaking the sound barrier in electron liquids opens the door for novel, intrinsically nonlinear electronic devices beyond the paradigm of incompressible flow.
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Submitted 25 September, 2025; v1 submitted 19 September, 2025;
originally announced September 2025.
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Bichromatic Moiré Superlattices for Tunable Quadrupolar Trions and Correlated States
Authors:
Mingfeng Chen,
Runtong Li,
Haonan Wang,
Yuliang Yang,
Yiyang Lai,
Chaowei Hu,
Takashi Taniguchi,
Kenji Watanabe,
Jiaqiang Yan,
Jiun-Haw Chu,
Erik Henriksen,
Chuanwei Zhang,
Li Yang,
Xi Wang
Abstract:
Moiré superlattices in transition metal dichalcogenide heterostructures provide a platform to engineer many-body interactions. Here, we realize a bichromatic moiré superlattice in an asymmetric WSe$_2$/WS$_2$/WSe$_2$ heterotrilayer by combining R- and H-stacked bilayers with mismatched moiré wavelengths. This structure hosts fermionic quadrupolar moiré trions -- interlayer excitons bound to an opp…
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Moiré superlattices in transition metal dichalcogenide heterostructures provide a platform to engineer many-body interactions. Here, we realize a bichromatic moiré superlattice in an asymmetric WSe$_2$/WS$_2$/WSe$_2$ heterotrilayer by combining R- and H-stacked bilayers with mismatched moiré wavelengths. This structure hosts fermionic quadrupolar moiré trions -- interlayer excitons bound to an opposite-layer hole -- with vanishing dipole moments. These trions arise from hybridized moiré potentials enabling multiple excitonic orbitals with tunable interlayer coupling, allowing control of excitonic and electronic ground states. We show that an out-of-plane electric field could effectively reshape moiré excitons and interlayer-intralayer electron correlations, driving a transition from interlayer to intralayer Mott states with enhanced Coulomb repulsion. The asymmetric stacking further enriches excitonic selection rules, broadening opportunities for spin-photon engineering. Our results demonstrate bichromatic moiré superlattices as a reconfigurable platform for emergent quantum states, where quadrupolar moiré trion emission may enable coherent and entangled quantum light manipulation.
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Submitted 18 September, 2025;
originally announced September 2025.
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Investigating the Ferroelectric Potential Landscape of 3R-MoS$_2$ through Optical Measurements
Authors:
Jan-Niklas Heidkamp,
Johannes Schwandt-Krause,
Swarup Deb,
Kenji Watanabe,
Takashi Taniguchi,
Rico Schwartz,
Tobias Korn
Abstract:
In recent years, sliding ferroelectricity has emerged as a topic of significant interest due to its possible application in non-volatile random access memory. This phenomenon is unique to two-dimensional van der Waals materials, where vertical ferroelectric polarization switching is induced by relative in-plane sliding of the constituent layers. The intrinsic stacking order influences the resultin…
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In recent years, sliding ferroelectricity has emerged as a topic of significant interest due to its possible application in non-volatile random access memory. This phenomenon is unique to two-dimensional van der Waals materials, where vertical ferroelectric polarization switching is induced by relative in-plane sliding of the constituent layers. The intrinsic stacking order influences the resulting polarization, creating distinct polarization regions separated by domain walls. These regions and the domain walls can be manipulated using an applied vertical electric field, enabling a switchable system that retains the environmental robustness of van der Waals materials under ambient conditions. This study investigates 3R-MoS$_2$ using various optical measurement techniques at room temperature. The spatially resolved optical measurements reveal apparent signal changes corresponding to different ferroelectric stacking orders and variations in layer count. Our findings demonstrate that fast optical mapping at room temperature is a reliable method for probing ferroelectric potential steps in 3R-stacked MoS$_2$ samples, thereby facilitating the identification of the ferroelectric configuration. This approach does not require a conductive substrate or an electrical contact to the sample, making it more versatile than traditional atomic force probe techniques.
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Submitted 19 September, 2025; v1 submitted 18 September, 2025;
originally announced September 2025.
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Thermal rectification in jointless Pb solid wire
Authors:
Masayuki Mashiko,
Poonam Rani,
Yuto Watanabe,
Yoshikazu Mizuguchi
Abstract:
Thermal rectification is observed in jointless Pb wires at temperatures near the superconducting transition of Pb under magnetic fields. Using different magnetic-field (H) response of temperature dependence of thermal conductivity (\k{appa}-T) under H parallel to J and H perpendicular to J where J is heat flow, we fabricated a jointless thermal diode. Thermal rectification is observed with the the…
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Thermal rectification is observed in jointless Pb wires at temperatures near the superconducting transition of Pb under magnetic fields. Using different magnetic-field (H) response of temperature dependence of thermal conductivity (\k{appa}-T) under H parallel to J and H perpendicular to J where J is heat flow, we fabricated a jointless thermal diode. Thermal rectification is observed with the thermal rectification ratio (TRR) of 1.5 and the difference in \k{appa} of 330 W m-1 K-1 at T = 5.11 K under H = 400 Oe for a Pb wire with a 50%-bent (H perpendicular to J) and 50%-straight (H parallel to J) structure. The peak temperature of TRR can be tuned by the strength of applied magnetic field. By changing bent ratio to 40%-bent, a higher TRR exceeding 2 was observed. The Pb-jointless thermal diode will be a useful material for thermal management at cryogenic temperatures.
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Submitted 1 October, 2025; v1 submitted 18 September, 2025;
originally announced September 2025.
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Engineering strong correlations in a perfectly aligned dual moiré system
Authors:
Amine Ben Mhenni,
Elif Çetiner,
Kenji Watanabe,
Takashi Taniguchi,
Jonathan J. Finley,
Nathan P. Wilson
Abstract:
Exotic collective phenomena emerge when bosons strongly interact within a lattice. However, creating a robust and tunable solid-state platform to explore such phenomena has been elusive. Dual moiré systems$-$compromising two Coulomb-coupled moiré lattices$-$offer a promising system for investigating strongly correlated dipolar excitons (composite bosons) with electrical control. Thus far, their im…
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Exotic collective phenomena emerge when bosons strongly interact within a lattice. However, creating a robust and tunable solid-state platform to explore such phenomena has been elusive. Dual moiré systems$-$compromising two Coulomb-coupled moiré lattices$-$offer a promising system for investigating strongly correlated dipolar excitons (composite bosons) with electrical control. Thus far, their implementation has been hindered by the relative misalignment and incommensurability of the two moiré patterns. Here we report a dual moiré system with perfect translational and rotational alignment, achieved by utilizing twisted hexagonal boron nitride (hBN) bilayer to both generate an electrostatic moiré potential and separate MoSe$_{2}$ and WSe$_{2}$ monolayers. We observe strongly correlated electron phases driven by intralayer interactions and identify interlayer Rydberg trions, which become trapped in the presence of the Mott insulating state. Importantly, our platform is electrostatically programmable, allowing the realization of different lattice symmetries with either repulsive or attractive interlayer interactions. In particular, we implement the latter scenario by optically injecting charges, which form a dipolar excitonic phase. Our results establish a versatile platform for the exploration and manipulation of exotic and topological bosonic quantum many-body phases.
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Submitted 16 September, 2025;
originally announced September 2025.
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Radio-frequency charge detection on graphene electron-hole double quantum dots
Authors:
Katrin Hecker,
Samuel Möller,
Hubert Dulisch,
Şiyar Duman,
Leon Stecher,
Lucca Valerius,
Tobias Deußen,
Saketh Ravuri,
Kenji Watanabe,
Takashi Taniguchi,
Florian Libisch,
Christian Volk,
Christoph Stampfer
Abstract:
High-fidelity detection of charge transitions in quantum dots (QDs) is a key ingredient in solid state quantum computation. We demonstrate high-bandwidth radio-frequency charge detection in bilayer graphene quantum dots (QDs) using a capacitively coupled quantum point contact (QPC). The device design suppresses screening effects and enables sensitive QPC-based charge readout. The QPC is arranged t…
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High-fidelity detection of charge transitions in quantum dots (QDs) is a key ingredient in solid state quantum computation. We demonstrate high-bandwidth radio-frequency charge detection in bilayer graphene quantum dots (QDs) using a capacitively coupled quantum point contact (QPC). The device design suppresses screening effects and enables sensitive QPC-based charge readout. The QPC is arranged to maximize the readout contrast between two neighboring, coupled electron and hole QDs. We apply the readout scheme to a single-particle electron-hole double QD and demonstrate time-resolved detection of charge states as well as magnetic field dependent tunneling rates. This promises a high-fidelity readout scheme for individual spin and valley states, which is important for the operation of spin, valley or spin-valley qubits in bilayer graphene.
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Submitted 15 September, 2025;
originally announced September 2025.
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Localizing Individual Exciton on a Quantum Hall Antidot
Authors:
Rui Pu,
Naomi Mizuno,
Fernando Camino,
Runchen Li,
Kenji Watanabe,
Takashi Taniguchi,
Dmitri Averin,
Xu Du
Abstract:
Quantum Hall systems host quasiparticles demonstrating correlated electron physics and non-trivial quantum statistics. Excitonic phases, archetypical for interaction effect, have attracted significant interest in recent years in double-layer quantum Hall systems where spatially separated electrons and holes form bosonic condensate through Coulomb interaction. Here, employing the approach of quantu…
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Quantum Hall systems host quasiparticles demonstrating correlated electron physics and non-trivial quantum statistics. Excitonic phases, archetypical for interaction effect, have attracted significant interest in recent years in double-layer quantum Hall systems where spatially separated electrons and holes form bosonic condensate through Coulomb interaction. Here, employing the approach of quantum Hall antidot with two spatially separated edge channels, we demonstrate a new type of quantum Hall quasiparticle exciton which represents a quantum-coherent bound state of an electron and a hole situated on their corresponding edges coupled through intralayer tunneling and Coulomb interaction. Quantum-coherent dynamics of the exciton is reflected in the observed evolution of the position and magnitude of the antidot conductance peaks around the electron-hole resonance. The quantum Hall antidot setup allows localization and electrical tuning of individual quantum Hall excitons. Quantum superposition of vacuum- and electron-hole pairing states is observed through the gate-dependent tunneling conductance of the antidot. Modeling the electron-hole pair as a coupled two-level system, semi-quantitative understanding of experimental observations is achieved. This work opens avenues for creating quantum systems of multiple quantum Hall quasiparticles.
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Submitted 14 September, 2025;
originally announced September 2025.
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Correlated interlayer quantum Hall state in alternating twisted trilayer graphene
Authors:
Dohun Kim,
Gyeoul Lee,
Nicolas Leconte,
Seyoung Jin,
Takashi Taniguchi,
Kenji Watanabe,
Jeil Jung,
Gil Young Cho,
Youngwook Kim
Abstract:
Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer graphene with a twist angle of about 5$^{\circ}$. The data reveal an electron-hole asymmetry that can be captured by introducing layer-dependent potential shifts. A…
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Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer graphene with a twist angle of about 5$^{\circ}$. The data reveal an electron-hole asymmetry that can be captured by introducing layer-dependent potential shifts. At charge neutrality ($ν_{\mathrm{tot}}=0$), three low-resistance states appear, which Hartree-Fock mean-field analysis attributes to emerging spin-resolved helical edge modes similar to those of quantum spin Hall insulators. At $ν_{\mathrm{tot}}=-1$, we also observe suppressed resistance when the middle and bottom layers are each half filled while the top layer remains inert at $ν=-2$, consistent with an interlayer excitonic quantum Hall state. These results demonstrate correlated interlayer quantum Hall phases in alternating twisted trilayer graphene, including spin-resolved edge transport and excitonic order.
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Submitted 13 September, 2025;
originally announced September 2025.
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Terahertz electrodynamics in a zero-field Wigner crystal
Authors:
Su-Di Chen,
Ruishi Qi,
Ha-Leem Kim,
Qixin Feng,
Ruichen Xia,
Dishan Abeysinghe,
Jingxu Xie,
Takashi Taniguchi,
Kenji Watanabe,
Dung-Hai Lee,
Feng Wang
Abstract:
In clean two-dimensional (2D) systems, electrons are expected to self-organize into a regular lattice, a Wigner crystal, when their mutual Coulomb repulsion overwhelms kinetic energy. Understanding the Wigner crystal at zero magnetic field is a long-sought goal in physics, thanks to its fundamental simplicity and possible connection to the density-driven metal-insulator transition. To date, eviden…
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In clean two-dimensional (2D) systems, electrons are expected to self-organize into a regular lattice, a Wigner crystal, when their mutual Coulomb repulsion overwhelms kinetic energy. Understanding the Wigner crystal at zero magnetic field is a long-sought goal in physics, thanks to its fundamental simplicity and possible connection to the density-driven metal-insulator transition. To date, evidence for such a crystal has been reported across various platforms. However, the AC conductivity of a zero-field Wigner crystal, a key observable characterizing its electrodynamics, has never been measured. Here, we develop an ultrasensitive on-chip terahertz (THz) spectroscopy technique to probe the AC conductivity in electrostatically gated monolayer MoSe2 encapsulated in hexagonal boron nitride. We observe a sub-THz resonance corresponding to the pinning mode of a zero-field Wigner crystal, whose frequency is orders of magnitude higher than those under high magnetic fields. Using the pinning mode as an indicator, we reveal that moderate disorder notably stabilizes the Wigner crystal. With increasing density towards melting, we find that the pinning mode of the Wigner crystal coexists with a growing Drude component characteristic of an electron liquid, and the competition between these two components in the conductivity spectra leads to the insulator-metal transition of the 2D electron system. Our findings not only elucidate the low-energy electrodynamics of a zero-field Wigner crystal, but also establish on-chip THz spectroscopy as a powerful probe for correlated quantum phases in two-dimensional materials.
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Submitted 12 September, 2025;
originally announced September 2025.
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Hard and soft phase slips in a Fabry-Pérot quantum Hall interferometer
Authors:
N. L. Samuelson,
L. A. Cohen,
W. Wang,
S. Blanch,
T. Taniguchi,
K. Watanabe,
M. P. Zaletel,
A. F. Young
Abstract:
Quantum Hall Fabry-Pérot interferometers are sensitive to the properties of bulk quasiparticles enclosed by the interferometer loop, with the interference phase containing information about both the quasiparticle statistics and the Coulomb-mediated bulk-edge coupling. Previous studies have explored the role of the bulk-edge coupling in an equilibrium picture where quasiparticles enter and exit the…
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Quantum Hall Fabry-Pérot interferometers are sensitive to the properties of bulk quasiparticles enclosed by the interferometer loop, with the interference phase containing information about both the quasiparticle statistics and the Coulomb-mediated bulk-edge coupling. Previous studies have explored the role of the bulk-edge coupling in an equilibrium picture where quasiparticles enter and exit the interferometer rapidly compared to the timescale over which the interferometer phase is measured. Here, we present data from a monolayer graphene quantum Hall interferometer in the integer quantum Hall regime at $ν= -1$ and $ν= -2$. Quantum interference shows phase slips associated with the entrance of quasiparticles to the interferometer bulk. Tracing the dependence of these phase slips on the magnetic field, we show that the equilibration time can become as long as several minutes. We further use our multi-gated geometry to identify two classes of phase slips. The first is associated with the addition of a quasiparticle to a bulk `puddle' of quasiparticles uniformly coupled to the entire chiral edge state, while the second is associated with the addition of a quasiparticle trapped by a defect site that couples predominantly to the closest portion of the edge.
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Submitted 11 September, 2025;
originally announced September 2025.
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Observation of the crossover from quantum fluxoid to half-quantum fluxoid in a chiral superconducting device
Authors:
Masashi Tokuda,
Fumiya Matsumoto,
Noriaki Maeda,
Tomo Higashihara,
Mai Nakao,
Mori Watanabe,
Sanghyun Lee,
Ryoya Nakamura,
Masaki Maeda,
Nan Jiang,
Di Yue,
Hideki Narita,
Kazushi Aoyama,
Takeshi Mizushima,
Jun-ichiro Ohe,
Teruo Ono,
Xiaofeng Jin,
Kensuke Kobayashi,
Yasuhiro Niimi
Abstract:
Topological superconductors are one of the intriguing material groups from the viewpoint of not only condensed matter physics but also industrial application such as quantum computers based on Majorana fermion. For the real application, developments of the thin-film topological superconductors are highly desirable. Bi/Ni bilayer is a possible candidate for thin-film chiral superconductors where th…
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Topological superconductors are one of the intriguing material groups from the viewpoint of not only condensed matter physics but also industrial application such as quantum computers based on Majorana fermion. For the real application, developments of the thin-film topological superconductors are highly desirable. Bi/Ni bilayer is a possible candidate for thin-film chiral superconductors where the time-reversal symmetry is broken. Here we report the phase shift of resistance oscillations by half flux quantum in a ring-shaped device of epitaxial Bi/Ni bilayer induced by a small magnetic field through the ring. The half quantum fluxoid can be a decisive evidence for unconventional superconductors where the superconducting order parameter has an internal degree of freedom. The present result provides a functional operating principle for quantum devices where the phase of the supercurrent can be shifted by πwith a small magnetic field, based on the internal degree of freedom possessed by topological superconductivity.
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Submitted 11 September, 2025;
originally announced September 2025.
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Visualizing Electronic Structure of Twisted Bilayer MoTe2 in Devices
Authors:
Cheng Chen,
William Holtzmann,
Xiao-Wei Zhang,
Eric Anderson,
Shanmei He,
Yuzhou Zhao,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Kenji Watanabe,
Takashi Taniguchi,
Ting Cao,
Di Xiao,
Xiaodong Xu,
Yulin Chen
Abstract:
The pursuit of emergent quantum phenomena lies at the forefront of modern condensed matter physics. A recent breakthrough in this arena is the discovery of the fractional quantum anomalous Hall effect (FQAHE) in twisted bilayer MoTe2 (tbMoTe2), marking a paradigm shift and establishing a versatile platform for exploring the intricate interplay among topology, magnetism, and electron correlations.…
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The pursuit of emergent quantum phenomena lies at the forefront of modern condensed matter physics. A recent breakthrough in this arena is the discovery of the fractional quantum anomalous Hall effect (FQAHE) in twisted bilayer MoTe2 (tbMoTe2), marking a paradigm shift and establishing a versatile platform for exploring the intricate interplay among topology, magnetism, and electron correlations. While significant progress has been made through both optical and electrical transport measurements, direct experimental insights into the electronic structure - crucial for understanding and modeling this system - have remained elusive. Here, using spatially and angle-resolved photoemission spectroscopy (μ-ARPES), we directly map the electronic band structure of tbMoTe2. We identify the valence band maximum, whose partial filling underlies the FQAHE, at the K points, situated approximately 150 meV above the Γ valley. By fine-tuning the doping level via in-situ alkali metal deposition, we also resolve the conduction band minimum at the K point, providing direct evidence that tbMoTe2 exhibits a direct band gap - distinct from all previously known moire bilayer transition metal dichalcogenide systems. These results offer critical insights for theoretical modeling and advance our understanding of fractionalized excitations and correlated topological phases in this emergent quantum material.
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Submitted 10 September, 2025;
originally announced September 2025.
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Non-monotonic band flattening near the magic angle of twisted bilayer MoTe$_2$
Authors:
Yujun Deng,
William Holtzmann,
Ziyan Zhu,
Timothy Zaklama,
Paulina Majchrzak,
Takashi Taniguchi,
Kenji Watanabe,
Makoto Hashimoto,
Donghui Lu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Liang Fu,
Thomas P. Devereaux,
Xiaodong Xu,
Zhi-Xun Shen
Abstract:
Twisted bilayer MoTe$_2$ (tMoTe$_2$) is an emergent platform for exploring exotic quantum phases driven by the interplay between nontrivial band topology and strong electron correlations. Direct experimental access to its momentum-resolved electronic structure is essential for uncovering the microscopic origins of the correlated topological phases therein. Here, we report angle-resolved photoemiss…
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Twisted bilayer MoTe$_2$ (tMoTe$_2$) is an emergent platform for exploring exotic quantum phases driven by the interplay between nontrivial band topology and strong electron correlations. Direct experimental access to its momentum-resolved electronic structure is essential for uncovering the microscopic origins of the correlated topological phases therein. Here, we report angle-resolved photoemission spectroscopy (ARPES) measurements of tMoTe$_2$, revealing pronounced twist-angle-dependent band reconstruction shaped by orbital character, interlayer coupling, and moiré potential modulation. Density functional theory (DFT) captures the qualitative evolution, yet underestimates key energy scales across twist angles, highlighting the importance of electronic correlations. Notably, the hole effective mass at the K point exhibits a non-monotonic dependence on twist angle, peaking near 2°, consistent with band flattening at the magic angle predicted by continuum models. Via electrostatic gating and surface dosing, we further visualize the evolution of electronic structure versus doping, enabling direct observation of the conduction band minimum and confirm tMoTe$_2$ as a direct band gap semiconductor. These results establish a spectroscopic foundation for modeling and engineering emergent quantum phases in this moiré platform.
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Submitted 10 September, 2025;
originally announced September 2025.
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Linking thermodynamic correlation signatures and superconductivity in twisted trilayer graphene
Authors:
Jesse C. Hoke,
Yifan Li,
Yuwen Hu,
Julian May-Mann,
Kenji Watanabe,
Takashi Taniguchi,
Trithep Devakul,
Aaron Sharpe,
Benjamin E. Feldman
Abstract:
Twisted graphene multilayers exhibit strong electronic correlations, which manifest in a range of experimental signatures. Yet how these signatures relate to each other and the microscopic ground states-and how twist angle and band structure reshape them-remains poorly understood. Here we study this interplay by correlating local thermodynamic and transport measurements in a twisted trilayer graph…
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Twisted graphene multilayers exhibit strong electronic correlations, which manifest in a range of experimental signatures. Yet how these signatures relate to each other and the microscopic ground states-and how twist angle and band structure reshape them-remains poorly understood. Here we study this interplay by correlating local thermodynamic and transport measurements in a twisted trilayer graphene (TTG) sample with unequal angles and flat electronic bands. We use a scanning single-electron transistor to map the impact of electron-electron interactions in a region of the sample where the local twist angle evolves smoothly. We observe gapped correlated insulators and a sawtooth in electronic compressibility, both exhibiting pronounced electron-hole (e-h) asymmetry with distinct magic angles for conduction and valence bands. Subsequent transport measurements in the same region reveal robust superconductivity with a similar e-h asymmetry. Our measurements indicate that superconductivity is not directly tied to the correlated insulators. Instead, its critical temperature correlates closely with the strength of the sawtooth in compressibility, suggesting a common origin or link between the two. By combining a local probe with transport measurements, we uncover connections between superconductivity and thermodynamic correlation signatures that are not apparent from either technique in isolation, highlighting the power of our dual approach and establishing their dependence on interlayer twist angles in TTG.
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Submitted 9 September, 2025;
originally announced September 2025.
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Towards Accurate and Scalable High-throughput MOF Adsorption Screening: Merging Classical Force Fields and Universal Machine Learned Interatomic Potentials
Authors:
Satyanarayana Bonakala,
Mohammad Wahiduzzaman,
Taku Watanabe,
Karim Hamzaoui,
Guillaume Maurin
Abstract:
High-throughput computational screening (HTCS) of gas adsorption in metal-organic frameworks (MOFs) typically relies on classical generic force fields such as the Universal Force Field (UFF), which are efficient but often fail to capture complex host-guest interactions. Universal machine-learned interatomic potentials (u-MLIPs) offer near-quantum accuracy at far lower cost than density functional…
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High-throughput computational screening (HTCS) of gas adsorption in metal-organic frameworks (MOFs) typically relies on classical generic force fields such as the Universal Force Field (UFF), which are efficient but often fail to capture complex host-guest interactions. Universal machine-learned interatomic potentials (u-MLIPs) offer near-quantum accuracy at far lower cost than density functional theory (DFT), yet their large-scale application in adsorption screening remains limited. Here, we present a hybrid screening strategy that merges Widom insertion Monte Carlo simulations performed with both UFF and the PreFerred Potential (PFP) u-MLIP to evaluate the adsorption performance of a large MOF database, using ethylene capture under humid conditions as a benchmark. From a curated set of MOFs, 88 promising candidates initially identified using UFF-based HTCS were re-evaluated with the PFP u-MLIP, benchmarked against DFT calculations to refine adsorption predictions and assess the role of framework flexibility. We show that PFP u-MLIP is essential to accurately assess the sorption performance of MOFs involving strong hydrogen bonding or confinement pockets within narrow pores, effects poorly captured using UFF. Notably, accounting for framework flexibility through full unit cell relaxation revealed deviations in ethylene affinity of up to 20 kJ mol-1, underscoring the impact of guest-induced structural changes. This HTCS workflow identified seven MOFs with optimal pore sizes, high ethylene affinity, and high C2H4/H2O selectivity, offering moisture-tolerant performance for applications from food packaging to trace ethylene removal. Our findings highlight the importance of accurately capturing host-guest energetics and framework flexibility, and demonstrate the practicality of incorporating u-MLIPs into scalable HTCS for identifying top MOF sorbents.
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Submitted 8 September, 2025;
originally announced September 2025.
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Exciton Formation in Two-Dimensional Semiconductors
Authors:
K. Mourzidis,
V. Jindal,
M. Glazov,
A. Balocchi,
C. Robert,
D. Lagarde,
P. Renucci,
L. Lombez,
T. Taniguchi,
K. Watanabe,
T. Amand,
S. Francoeur,
X. Marie
Abstract:
The optical properties of atomically thin semiconductors are dominated by excitons, tightly bound electron-hole pairs, which give rise to particularly rich and remarkable physics. Despite their importance, the microscopic formation mechanisms of excitons remain very poorly understood due to the complex interplay of concurrent phenomena occurring on an ultrafast timescale. Here, we investigate the…
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The optical properties of atomically thin semiconductors are dominated by excitons, tightly bound electron-hole pairs, which give rise to particularly rich and remarkable physics. Despite their importance, the microscopic formation mechanisms of excitons remain very poorly understood due to the complex interplay of concurrent phenomena occurring on an ultrafast timescale. Here, we investigate the exciton formation processes in 2D materials based on transition metal dichalcogenide (TMD) monolayers using a technique based on the control of excitation light polarization. It allows us to distinguish between the two competing models of exciton formation: geminate and bimolecular formation. The geminate process is the direct formation of the exciton from the initially photogenerated electron hole pair before the loss of correlation between them, whereas the bimolecular process corresponds to the random binding of free electron hole-pairs from the initially photogenerated plasma. These processes control the exciton formation time. Our findings reveal that the luminescence intensity is higher by up to 40% for circularly polarized excitation compared to linearly polarized excitation for laser energy above the free carrier gap. We show that this spin-dependent exciton emission is a fingerprint of the bimolecular formation process. Importantly, we observe that exciton linear polarization (valley coherence) persists even for laser excitation energies exceeding the gap. We demonstrate that it is the result of a fraction of excitons formed by a geminate process. This shows that two formation processes coexist for excitation energies above the gap, where both mechanisms operate concurrently.
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Submitted 8 September, 2025;
originally announced September 2025.
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Room Temperature Single Photon Detection at 1550 nm using van der Waals Heterojunction
Authors:
Nithin Abraham,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
Single-photon detectors (SPDs) are crucial in applications ranging from space, biological imaging to quantum communication and information processing. The SPDs that operate at room temperature are of particular interest to broader application space as the energy overhead introduced by the cryogenic cooling can be avoided. Although silicon-based single photon avalanche diodes (SPADs) are well matur…
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Single-photon detectors (SPDs) are crucial in applications ranging from space, biological imaging to quantum communication and information processing. The SPDs that operate at room temperature are of particular interest to broader application space as the energy overhead introduced by the cryogenic cooling can be avoided. Although silicon-based single photon avalanche diodes (SPADs) are well matured and operate at room temperature, the bandgap limitation restricts their operation at telecommunication wavelength (1550 nm) and beyond. InGaAs-based SPADs, on the other hand, are sensitive to 1550 nm photons, but suffer from relatively lower efficiency, high dark count rate, afterpulsing probability, and pose hazards to the environment from the fabrication process. In this work, we demonstrate how we can leverage the properties of nanomaterials to address these challenges and realise a room temperature single-photon detector capable of operating at 1550 nm. We achieve this by coupling a low bandgap ($\sim 350~meV$) absorber (black phosphorus) to a sensitive van der Waals probe that is capable of detecting discrete electron fluctuation. We optimize the device for operation at $1550~nm$ and demonstrate an overall quantum efficiency of $21.4\%$ (estimated as $42.8\%$ for polarized light), and a minimum dark count of $\sim 720~Hz$ at room temperature.
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Submitted 5 September, 2025;
originally announced September 2025.
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Quantum Hall Antidot as a Fractional Coulombmeter
Authors:
Mario Di Luca,
Emily Hajigeorgiou,
Zekang Zhou,
Tevž Lotrič,
Tengyan Feng,
Kenji Watanabe,
Takashi Taniguchi,
Steven H. Simon,
Mitali Banerjee
Abstract:
The detection of fractionally charged quasiparticles, which arise in the fractional quantum Hall regime, is of fundamental importance for probing their exotic quantum properties. While electronic interferometers have been central to probe their statistical properties, their interpretation is often complicated by bulk-edge interactions. Antidots, potential hills in the quantum Hall regime, are part…
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The detection of fractionally charged quasiparticles, which arise in the fractional quantum Hall regime, is of fundamental importance for probing their exotic quantum properties. While electronic interferometers have been central to probe their statistical properties, their interpretation is often complicated by bulk-edge interactions. Antidots, potential hills in the quantum Hall regime, are particularly valuable in this context, as they overcome the geometric limitations of conventional designs and act as controlled impurities within a quantum point contact. Furthermore, antidots allow for quasiparticle charge detection through straightforward conductance measurements, replacing the need for more demanding techniques. In this work, we employ a gate-defined bilayer graphene antidot operating in the Coulomb-dominated regime to study quasiparticle tunneling in both integer and fractional quantum Hall states. We show that the gate-voltage period and the oscillation slope directly reveal the charge of the tunneling quasiparticles, providing a practical method to measure fractional charge in graphene. We report direct measurements of fractional charge, finding $q = e/3$ at $ν= 4/3$, 5/3 and 7/3, $q = 2e/3$ at $ν= 2/3$ and $q = 3e/5$ at $ν= 3/5$, while at $ν= 8/3$ we observe signatures of both $e/3$ and $2e/3$ tunneling charge. The simplicity and tunability of this design open a pathway to extend antidot-based charge measurements to other van der Waals materials, establishing antidots as a powerful and broadly applicable platform to study the quantum Hall effect.
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Submitted 18 September, 2025; v1 submitted 4 September, 2025;
originally announced September 2025.
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Magic continuum in multi-moiré twisted trilayer graphene
Authors:
Li-Qiao Xia,
Aviram Uri,
Jiaojie Yan,
Aaron Sharpe,
Filippo Gaggioli,
Nicole S. Ticea,
Julian May-Mann,
Kenji Watanabe,
Takashi Taniguchi,
Liang Fu,
Trithep Devakul,
Jurgen H. Smet,
Pablo Jarillo-Herrero
Abstract:
Moiré lattices provide a highly tunable platform for exploring the interplay between electronic correlations and band topology. Introducing a second moiré pattern extends this paradigm: interference between the two moiré patterns produces a supermoiré modulation, opening a route to further tailor electronic properties. Twisted trilayer graphene generally exemplifies such a system: two distinct moi…
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Moiré lattices provide a highly tunable platform for exploring the interplay between electronic correlations and band topology. Introducing a second moiré pattern extends this paradigm: interference between the two moiré patterns produces a supermoiré modulation, opening a route to further tailor electronic properties. Twisted trilayer graphene generally exemplifies such a system: two distinct moiré patterns arise from the relative twists between adjacent graphene layers. Here, we report the observation of correlated phenomena across a wide range of twisted trilayer graphene devices whose twist angles lie along two continuous lines in the twist-angle parameter space. Depending on the degree of lattice relaxation, twisted trilayer graphene falls into two classes: moiré polycrystals, composed of periodic domains with locally commensurate moiré order, and moiré quasicrystals, characterized by smoothly varying local moiré configurations. In helically twisted moiré polycrystals, we observe an anomalous Hall effect, consistent with topological bands arising from domains with broken $xy$-inversion symmetry. In contrast, superconductivity appears generically in our moiré quasicrystals. A subset of these systems exhibits signatures of spatially modulated superconductivity, which we attribute to the supermoiré structure. Our findings uncover the organizing principles of the observed correlated phases in twisted trilayer graphene, highlight the critical roles of the supermoiré modulation and lattice relaxation, and suggest a broader framework in which magic conditions arise not as isolated points but as extended manifolds within the multi-dimensional twist-angle space of complex moiré materials.
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Submitted 3 September, 2025;
originally announced September 2025.
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Family of Unconventional Superconductivities in Crystalline Graphene
Authors:
Junseok Seo,
Armel A. Cotten,
Mingchi Xu,
Omid Sharifi Sedeh,
Henok Weldeyesus,
Tonghang Han,
Zhengguang Lu,
Zhenghan Wu,
Shenyong Ye,
Wei Xu,
Jixiang Yang,
Emily Aitken,
Prayoga P. Liong,
Zach Hadjri,
Rasul Gazizulin,
Kenji Watanabe,
Takashi Taniguchi,
Mingda Li,
Dominik M. Zumbühl,
Long Ju
Abstract:
Unconventional superconductors exhibit multiple broken symmetries and exceed the range of the Bardeen-Cooper-Schrieffer (BCS) theory. For instance, time-reversal symmetry can be broken in addition to the gauge symmetry, resulting in superconductors that can be enhanced or induced by a magnetic field. However, such unconventional superconductivities are more vulnerable to impurities than their BCS…
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Unconventional superconductors exhibit multiple broken symmetries and exceed the range of the Bardeen-Cooper-Schrieffer (BCS) theory. For instance, time-reversal symmetry can be broken in addition to the gauge symmetry, resulting in superconductors that can be enhanced or induced by a magnetic field. However, such unconventional superconductivities are more vulnerable to impurities than their BCS counterparts, requiring highly ordered and clean material systems to observe them. Crystalline rhombohedral multilayer graphene is a promising platform to explore unconventional superconductivity due to its superior material quality and gate-tunable strong correlation effects. Here we report transport measurements of rhombohedral tetralayer and pentalayer graphene, where a spectrum of superconductivities in a clean limit are observed. Three of them (SC2-4) show highly unusual enhancements by magnetic fields: 1. SC2 is strengthened by an in-plane field; 2. SC3 is boosted by a small out-of-plane field; 3. SC4 is induced by an in-plane field. All these superconductors are robust against an in-plane field up to 8.5 Tesla, exceeding the Pauli limit of conventional superconductors by tens of times and suggesting their unconventional nature. Moreover, we observed that proximitized spin-orbit coupling generates a plethora of new superconductors in the phase diagram, while maintaining the high quality of bare rhombohedral graphene. Our work establishes a family of new superconductors in rhombohedral multilayer graphene, which also provides an ideal platform to engineer non-Abelian quasiparticles by proximitizing with quantum anomalous Hall states existing in the same material system.
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Submitted 3 September, 2025;
originally announced September 2025.
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Highly tunable band structure in ferroelectric R-stacked bilayer WSe$_2$
Authors:
Zhe Li,
Prokhor Thor,
George Kourmoulakis,
Tatyana V. Ivanova,
Takashi Taniguchi,
Kenji Watanabe,
Hongyi Yu,
Mauro Brotons-Gisbert,
Brian D. Gerardot
Abstract:
Transition metal dichalcogenide homobilayers unite two frontiers of quantum materials research: sliding ferroelectricity, arising from rhombohedral (R) stacking, and moiré quantum matter, emerging from small-angle twisting. The spontaneous polarization of ferroelectric R-stacked homobilayers produces a highly tunable band structure, which, together with strain-induced piezoelectricity, governs the…
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Transition metal dichalcogenide homobilayers unite two frontiers of quantum materials research: sliding ferroelectricity, arising from rhombohedral (R) stacking, and moiré quantum matter, emerging from small-angle twisting. The spontaneous polarization of ferroelectric R-stacked homobilayers produces a highly tunable band structure, which, together with strain-induced piezoelectricity, governs the topology and correlated electronic phases of twisted bilayers. Here we present a systematic low-temperature optical spectroscopy study of R-stacked bilayer WSe$_2$ to quantitatively establish its fundamental electronic and ferroelectric properties. Exciton and exciton-polaron spectroscopy under doping reveals a pronounced electron-hole asymmetry that confirms type-II band alignment, with the conduction and valence band edges located at the $Λ$ and K valleys, respectively. Through distinct excitonic responses and tunable interlayer-intralayer exciton hybridization under displacement fields, we uncover the coexistence of AB and BA ferroelectric domains. Using exciton-polarons as a probe, we directly measure the intrinsic polarization field and extract the interlayer potential. Finally, we demonstrate electric-field-driven symmetric switching of the valence band maximum, attributed to ferroelectric domain switching. These results provide a complete experimental picture of the band alignment, spontaneous polarization field, and domain dynamics of R-stacked WSe$_2$, establishing key parameters to understand twisted bilayers and enabling new ferroelectric and excitonic device opportunities.
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Submitted 2 September, 2025;
originally announced September 2025.
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Interaction-limited conductivity of twisted bilayer graphene revealed by giant terahertz photoresistance
Authors:
A. L. Shilov,
M. Kravtsov,
J. Covey,
M. A. Kashchenko,
O. Popova,
X. Zhou,
I. Yahniuk,
T. Taniguchi,
K. Watanabe,
A. I. Berdyugin,
Y. Wang,
S. D. Ganichev,
V. Perebeinos,
D. A. Svintsov,
A. Principi,
K. S. Novoselov,
D. L. Maslov,
D. A. Bandurin
Abstract:
Identifying the microscopic processes that limit conductivity is essential for understanding correlated and quantum-critical states in quantum materials. In twisted bilayer graphene (TBG) and other twist-controlled materials, the temperature dependence of metallic resistivity follows power-law scaling, with the exponent spanning a broad range, rendering standard transport measurements insufficient…
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Identifying the microscopic processes that limit conductivity is essential for understanding correlated and quantum-critical states in quantum materials. In twisted bilayer graphene (TBG) and other twist-controlled materials, the temperature dependence of metallic resistivity follows power-law scaling, with the exponent spanning a broad range, rendering standard transport measurements insufficient to unambiguously identify the dominant scattering processes and giving rise to competing interpretations ranging from phonon-limited transport and umklapp scattering to strange metallicity and heavy fermion renormalization. Here, we use terahertz (THz) excitation to selectively raise the electron temperature in TBG while keeping the lattice cold, enabling a direct separation of electron-electron and electron-phonon contributions to resistivity. We observe a giant THz photoresistance, reaching up to 70% in magic-angle devices, demonstrating that electronic interactions dominate transport even in regimes previously attributed to phonons, including the linear-in-temperature resistivity near the magic angle. Away from the magic angle, we observe coexisting photoresistance and robust quadratic-in-temperature resistivity at extremely low carrier densities where standard electron-electron scattering mechanisms (umklapp and Baber inter-band scattering) are kinematically forbidden. Our analysis identifies the breakdown of Galilean invariance in the Dirac-type dispersion as a possible origin of the interaction-limited conductivity, arising from inter-valley electron-electron collisions. Beyond twisted bilayer graphene, our approach establishes THz-driven hot-electron transport as a general framework for disentangling scattering mechanisms in low-density quantum materials.
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Submitted 2 September, 2025;
originally announced September 2025.
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Enhanced Terahertz Thermoelectricity via Engineered van Hove Singularities and Nernst Effect in Moiré Superlattices
Authors:
L. Elesin,
A. L. Shilov,
S. Jana,
I. Mazurenko,
P. A. Pantaleon,
M. Kashchenko,
N. Krivovichev,
V. Dremov,
I. Gayduchenko,
G. Goltsman,
T. Taniguchi,
K. Watanabe,
Y. Wang,
E. I. Titova,
D. A. Svintsov,
K. S. Novoselov,
D. A. Bandurin
Abstract:
Thermoelectric materials, long explored for energy harvesting and thermal sensing, convert heat directly into electrical signals. Extending their application to the terahertz (THz) frequency range opens opportunities for low-noise, bias-free THz detection, yet conventional thermoelectrics lack the sensitivity required for practical devices. Thermoelectric coefficients can be strongly enhanced near…
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Thermoelectric materials, long explored for energy harvesting and thermal sensing, convert heat directly into electrical signals. Extending their application to the terahertz (THz) frequency range opens opportunities for low-noise, bias-free THz detection, yet conventional thermoelectrics lack the sensitivity required for practical devices. Thermoelectric coefficients can be strongly enhanced near van Hove singularities (VHS), though these are usually difficult to access in conventional materials. Here we show that moiré band engineering unlocks these singularities for THz optoelectronics. Using 2D moiré structures as a model system, we observe strong enhancement of the THz photothermoelectric response in monolayer and bilayer graphene superlattices when the Fermi level is tuned to band singularities. Applying a relatively small magnetic field further boosts the response through the THz-driven Nernst effect, a transverse thermoelectric current driven by the THz-induced temperature gradient. Our results establish moiré superlattices as a versatile platform for THz thermoelectricity and highlight engineered band structures as a route to high-performance THz optoelectronic devices.
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Submitted 2 September, 2025; v1 submitted 2 September, 2025;
originally announced September 2025.
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Probing the Nanoscale Excitonic Landscape and Quantum Confinement of Excitons in Gated Monolayer Semiconductors
Authors:
Yueh-Chun Wu,
Bogdan Dryzhakov,
Huan Zhao,
Ivan Vlassiouk,
Kyle Kelley,
Takashi Taniguchi,
Kenji Watanabe,
Jun Yan,
Benjamin Lawrie
Abstract:
Engineering and probing excitonic properties at the nanoscale remains a central challenge in quantum photonics and optoelectronics. While exciton confinement via electrical control and strain engineering has been demonstrated in 2D semiconductors, substantial nanoscale heterogeneity limits the scalability of 2D quantum photonic device architectures. In this work, we use cathodoluminescence spectro…
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Engineering and probing excitonic properties at the nanoscale remains a central challenge in quantum photonics and optoelectronics. While exciton confinement via electrical control and strain engineering has been demonstrated in 2D semiconductors, substantial nanoscale heterogeneity limits the scalability of 2D quantum photonic device architectures. In this work, we use cathodoluminescence spectroscopy to probe the excitonic landscape of monolayer $WS_2$ under electrostatic gating. Exploiting the high spatial resolution of the converged electron beam, we resolve a homojunction arising between gated and ungated regions. Moreover, we reveal an exciton confinement channel arising from an unconventional doping mechanism driven by the interplay between the electron beam and the applied gate fields. These findings offer new insights into the optoelectronic behavior of monolayer semiconductors under the combined influence of electron-beam excitation and electrostatic gating. Our approach provides a pathway for exciton manipulation at the nanoscale and opens opportunities for controlling quantum-confined exciton transport in two-dimensional materials.
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Submitted 30 August, 2025;
originally announced September 2025.
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Optical Switching of Moiré Chern Ferromagnet
Authors:
Xiangbin Cai,
Haiyang Pan,
Yuzhu Wang,
Abdullah Rasmita,
Shunshun Yang,
Yan Zhao,
Wei Wang,
Ruihuan Duan,
Ruihua He,
Kenji Watanabe,
Takashi Taniguchi,
Zheng Liu,
Jesús Zúñiga Pérez,
Bo Yang,
Weibo Gao
Abstract:
Optical manipulation of quantum matter offers a non-contact, high-precision and fast control. Fractional Chern ferromagnet states in moiré superlattices are promising for topological quantum computing, but an effective optical control protocol has remained elusive. Here, we demonstrate robust optical switching of integer and fractional Chern ferromagnets in twisted MoTe2 bilayers using circularly…
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Optical manipulation of quantum matter offers a non-contact, high-precision and fast control. Fractional Chern ferromagnet states in moiré superlattices are promising for topological quantum computing, but an effective optical control protocol has remained elusive. Here, we demonstrate robust optical switching of integer and fractional Chern ferromagnets in twisted MoTe2 bilayers using circularly polarized light. Highly efficient optical manipulation of spin orientations in the topological ferromagnet regime is realized at zero field using a pump light power as low as 28 nanowatts per square micrometer. Utilizing this optically induced transition, we also demonstrate magnetic bistate cycling and spatially resolved writing of ferromagnetic domain walls. This work establishes a reliable and efficient optical control scheme for moiré Chern ferromagnets, paving the way for dissipationless spintronics and quantized Chern junction devices.
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Submitted 27 August, 2025;
originally announced August 2025.
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Optical control over topological Chern number in moiré materials
Authors:
Olivier Huber,
Kilian Kuhlbrodt,
Eric Anderson,
Weijie Li,
Kenji Watanabe,
Takashi Taniguchi,
Martin Kroner,
Xiaodong Xu,
Atac Imamoglu,
Tomasz Smolenski
Abstract:
Controlling quantum matter with light offers a promising route to dynamically tune its many-body properties, ranging from band topology to superconductivity. However, achieving such optical control for strongly correlated electron systems in the steady-state has remained elusive. Here, we demonstrate all-optical switching of the spin-valley degree of freedom of itinerant ferromagnets in twisted Mo…
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Controlling quantum matter with light offers a promising route to dynamically tune its many-body properties, ranging from band topology to superconductivity. However, achieving such optical control for strongly correlated electron systems in the steady-state has remained elusive. Here, we demonstrate all-optical switching of the spin-valley degree of freedom of itinerant ferromagnets in twisted MoTe2 homobilayers. This system uniquely features flat valley-contrasting Chern bands and exhibits a range of strongly correlated phases at various moiré lattice fillings, including Chern insulators and ferromagnetic metals. We show that the spin-valley orientation of all of these phases can be dynamically reversed by resonantly exciting the attractive polaron transition with circularly-polarized light. These findings not only constitute the first direct evidence for non-thermal switching of a ferromagnetic spin state at zero magnetic field, but also demonstrate the possibility of dynamical control over topological order parameter, paving the way for all-optical generation of chiral edge modes and topological quantum circuits.
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Submitted 26 August, 2025;
originally announced August 2025.
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Quantum geometry in low-energy linear and nonlinear optical responses of magnetic Rashba semiconductor (Ge,Mn)Te
Authors:
Tsubasa Takagi,
Hikaru Watanabe,
Ryutaro Yoshimi,
Yuki Sato,
Shingo Toyoda,
Atsushi Tsukazaki,
Kei S. Takahashi,
Masashi Kawasaki,
Yoshinori Tokura,
Naoki Ogawa
Abstract:
Quantum geometry appears as a key factor in understanding the optical properties of quantum materials, with the anticipation on diverging or quantized responses near the Dirac and Weyl points. Here we investigate linear and nonlinear optical responses -- optical conductivity and injection current -- in a magnetic Rashba semiconductor in the mid-infrared region, with varying the Fermi energy across…
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Quantum geometry appears as a key factor in understanding the optical properties of quantum materials, with the anticipation on diverging or quantized responses near the Dirac and Weyl points. Here we investigate linear and nonlinear optical responses -- optical conductivity and injection current -- in a magnetic Rashba semiconductor in the mid-infrared region, with varying the Fermi energy across the Dirac point. We reveal that the linear optical conductivity reflects quantum metric, which remains finite irrespective of the diminishing joint density-of-states at lower photon energy. It is also confirmed that the magnetic injection current enhances depending on the energy of the Fermi level relative to the Dirac point. These optical spectra are nicely reproduced by our theoretical calculations with geometrical effects taken into account.
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Submitted 26 August, 2025;
originally announced August 2025.
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Optical Control of Integer and Fractional Chern Insulators
Authors:
William Holtzmann,
Weijie Li,
Eric Anderson,
Jiaqi Cai,
Heonjoon Park,
Chaowei Hu,
Takashi Taniguchi,
Kenji Watanabe,
Jiun-Haw Chu,
Di Xiao,
Ting Cao,
Xiaodong Xu
Abstract:
Optical control of topology, particularly in the presence of electron correlations, is a fascinating topic with broad scientific and technological impact. Twisted MoTe$_2$ bilayer (tMoTe$_2$) is a newly discovered zero-field fractional Chern insulator (FCI), exhibiting the fractionally quantized anomalous Hall (FQAH) effect. Since the chirality of the edge states and sign of the Chern number are d…
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Optical control of topology, particularly in the presence of electron correlations, is a fascinating topic with broad scientific and technological impact. Twisted MoTe$_2$ bilayer (tMoTe$_2$) is a newly discovered zero-field fractional Chern insulator (FCI), exhibiting the fractionally quantized anomalous Hall (FQAH) effect. Since the chirality of the edge states and sign of the Chern number are determined by the underlying ferromagnetic polarization, manipulation of ferromagnetism would realize control of the CI/FCI states. Here, we demonstrate control and switching of ferromagnetic polarization, and thus the CI and FCI states by circularly polarized optical pumping in tMoTe$_2$. At low optical excitation power, we achieve on-demand preparation of ferromagnetic polarization by optical training, i.e., electrically tuning the system from non-ferromagnetic to desirable ferromagnetic states accompanied with helicity-selective optical pumping. With increased excitation power, we further realize direct optical switching of ferromagnetic polarization at a temperature far below the Curie temperature. Both optical training and direct switching of ferromagnetism are most effective near CI/FCI states, which we attribute to a gap enhanced valley polarization of photo-injected holes. We show that the magnetization can be dynamically switched by modulating the helicity of optical excitation. Spatially resolved measurements further demonstrate optical writing of a ferromagnetic, and thus a CI (or FCI) domain. Our work realizes precise optical control of a topological quantum many-body system with potential applications in topological spintronics, quantum memories, and creation of exotic edge states by programmable patterning of integer and fractional QAH domains.
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Submitted 25 August, 2025;
originally announced August 2025.
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3D microwave imaging of a van der Waals heterostructure
Authors:
Leonard W. Cao,
Chen Wu,
Lingyuan Lyu,
Liam Cohen,
Noah Samuelson,
Ziying Yan,
Sneh Pancholi,
Kenji Watanabe,
Takashi Taniguchi,
Daniel E. Parker,
Andrea F. Young,
Monica T. Allen
Abstract:
Van der Waals (vdW) heterostructures offer a tunable platform for the realization of emergent phenomena in layered electron systems. While scanning probe microscopy techniques have proven useful for the characterization of surface states and 2D crystals, the subsurface imaging of quantum phenomena in multi-layer systems presents a significant challenge. In 3D heterostructures, states that occupy d…
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Van der Waals (vdW) heterostructures offer a tunable platform for the realization of emergent phenomena in layered electron systems. While scanning probe microscopy techniques have proven useful for the characterization of surface states and 2D crystals, the subsurface imaging of quantum phenomena in multi-layer systems presents a significant challenge. In 3D heterostructures, states that occupy different planes can simultaneously contribute to the signal detected by the microscope probe, which complicates image analysis and interpretation. Here we present a quantum imaging technique that offers a glimpse into the third dimension by resolving states out of plane: it extracts the charge density landscape of individual atomic planes inside a vdW heterostructure, layer by layer. As a proof-of-concept, we perform layer-resolved imaging of quantum Hall states and charge disorder in double-layer graphene using milliKelvin microwave impedance microscopy. Here the discrete energy spectrum of the top layer enables transmission of microwaves through gapped states, thus opening direct access to quantum phases in the subsurface layer. Resolving how charge is distributed out-of-plane offers a direct probe of interlayer screening, revealing signatures of negative quantum capacitance driven by many-body correlations. At the same time, we extract key features of the band structure and thermodynamics, including gap sizes. Notably, by imaging the charge distribution on different atomic planes beneath the surface, we shed light on the roles of surface impurities and screening on the stability of fractional quantum Hall states. We also show that the uppermost graphene layer can serve as a top gate: This unlocks access to a wide range of phenomena that require displacement field control, from fractional Chern insulators in Moiré superlattices to correlated states in multilayer graphene.
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Submitted 25 August, 2025;
originally announced August 2025.
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Strong Correlation Driven Quadrupolar to Dipolar Exciton Transitions in a Trilayer Moiré Superlattice
Authors:
Yuze Meng,
Lei Ma,
Li Yan,
Ahmed Khalifa,
Dongxue Chen,
Shuai Zhang,
Rounak Banerjee,
Takashi Taniguchi,
Kenji Watanabe,
Seth Ariel Tongay,
Benjamin Hunt,
Shi-Zeng Lin,
Wang Yao,
Yong-Tao Cui,
Shubhayu Chatterjee,
Su-Fei Shi
Abstract:
The additional layer degree of freedom in trilayer moiré superlattices of transition metal dichalcogenides enables the emergence of novel excitonic species, such as quadrupolar excitons, which exhibit unique excitonic interactions and hold promise for realizing intriguing excitonic phases and their quantum phase transitions. Concurrently, the presence of strong electronic correlations in moiré sup…
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The additional layer degree of freedom in trilayer moiré superlattices of transition metal dichalcogenides enables the emergence of novel excitonic species, such as quadrupolar excitons, which exhibit unique excitonic interactions and hold promise for realizing intriguing excitonic phases and their quantum phase transitions. Concurrently, the presence of strong electronic correlations in moiré superlattices, as exemplified by the observations of Mott insulators and generalized Wigner crystals, offers a direct route to manipulate these new excitonic states and resulting collective excitonic phases. Here, we demonstrate that strong exciton-exciton and electron-exciton interactions, both stemming from robust electron correlations, can be harnessed to controllably drive transitions between quadrupolar and dipolar excitons. This is achieved by tuning either the exciton density or electrostatic doping in a trilayer semiconducting moiré superlattice. Our findings not only advance the fundamental understanding of quadrupolar excitons but also usher in new avenues for exploring and engineering many-body quantum phenomena through novel correlated excitons in semiconducting moiré systems.
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Submitted 21 August, 2025;
originally announced August 2025.
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Superconductivity and Ferroelectric Orbital Magnetism in Semimetallic Rhombohedral Hexalayer Graphene
Authors:
Jinghao Deng,
Jiabin Xie,
Hongyuan Li,
Takashi Taniguchi,
Kenji Watanabe,
Jie Shan,
Kin Fai Mak,
Xiaomeng Liu
Abstract:
Rhombohedral multilayer graphene has emerged as a promising platform for exploring correlated and topological quantum phases, enabled by its Berry-curvature-bearing flat bands. While prior work has focused on separated conduction and valence bands, we probe the extensive semimetallic regime of rhombohedral hexalayer graphene. We survey a rich phase diagram dominated by flavor-symmetry breaking and…
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Rhombohedral multilayer graphene has emerged as a promising platform for exploring correlated and topological quantum phases, enabled by its Berry-curvature-bearing flat bands. While prior work has focused on separated conduction and valence bands, we probe the extensive semimetallic regime of rhombohedral hexalayer graphene. We survey a rich phase diagram dominated by flavor-symmetry breaking and reveal an electric-field-driven band inversion through fermiology. Near this inversion, we find a superconducting-like state confined to a region with emergent electron and hole Fermi surfaces. In addition, two multiferroic orbital-magnetic phases are observed: a ferrovalley state near zero field and a ferroelectric state at large fields around charge neutrality. The latter shows electric-field-reversible magnetic hysteresis, consistent with a $ΔP \cdot M$ multiferroic order parameter. Our fermiology analysis elucidates the correlated semimetal regime in rhombohedral graphene and underscores its potential to host diverse quantum phases.
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Submitted 21 August, 2025;
originally announced August 2025.
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Asymptotic freedom of dephased charging
Authors:
Chayan Purkait,
B. Prasanna Venkatesh,
Gentaro Watanabe
Abstract:
Quantum batteries, small-scale energy storage devices based on quantum systems, offer the potential for enhanced charging performance through quantum effects such as coherence and collectivity. In this work, we study the collective charging of a quantum battery consisting of N qubits, coupled to a driven qubit charger in a star configuration, with controlled pure dephasing acting on the charger. W…
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Quantum batteries, small-scale energy storage devices based on quantum systems, offer the potential for enhanced charging performance through quantum effects such as coherence and collectivity. In this work, we study the collective charging of a quantum battery consisting of N qubits, coupled to a driven qubit charger in a star configuration, with controlled pure dephasing acting on the charger. We investigate how an "asymptotic freedom"-like behavior, in which all the energy deposited into the battery can be extracted as work, resulting in the ergotropy-to-energy ratio approaching unity, can emerge in the steady state of the battery. We show that the ergotropy-to-energy ratio increases with the number of qubits and approaches unity asymptotically as 1 - O(1/N). In the large-N limit, the emergence of approximate ground-state degeneracy of the collective battery system leads to this asymptotic freedom behavior, despite the battery state remaining mixed. We also discuss the scaling behavior of the charging time of the battery with N.
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Submitted 19 August, 2025;
originally announced August 2025.
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Transport evidence of current-induced nematic Dirac valleys in a parity-time-symmetric antiferromagnet
Authors:
H. Sakai,
Y. Miyamoto,
M. Kimata,
H. Watanabe,
Y. Yanase,
M. Ochi,
M. Kondo,
H. Murakawa,
N. Hanasaki
Abstract:
Itinerant antiferromagnets with broken time-reversal symmetry have recently attracted attention, since their spin-split bands enable large magnetotransport responses comparable to ferromagnets despite the negligible spontaneous magnetisation. When the inversion symmetry is further broken by the antiferromagnetic order, the emerging odd-parity multipole order renders the bands spin-degenerate but a…
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Itinerant antiferromagnets with broken time-reversal symmetry have recently attracted attention, since their spin-split bands enable large magnetotransport responses comparable to ferromagnets despite the negligible spontaneous magnetisation. When the inversion symmetry is further broken by the antiferromagnetic order, the emerging odd-parity multipole order renders the bands spin-degenerate but asymmetric in the momentum space. For such parity-time-symmetric antiferromagnets, it has been predicted that electronic nematicity is induced by current, allowing unconventional nonlinear transport phenomena. However, their experimental evidence has been lacking. Here, we report nonreciprocal angular magnetoresistance in the layered Dirac material SrMnBi$_2$ with parity-time-symmetric antiferromagnetic order in its Mn-Bi layers. By quantitatively modelling the angular and field dependencies using a phenomenological framework, we reveal that the observed nonreciprocal interlayer resistivity arises from the broken four-fold symmetry of the Dirac valleys in the Bi square net adjacent to the Mn-Bi layer. Furthermore, we demonstrate the alignment of parity-time-symmetric antiferromagnetic domains via current-field cooling, achieving electric-magnetic control of the $f$-wave polarity in momentum space. The observed switchable nonreciprocal transport associated with current-induced valley symmetry breaking paves the way for novel antiferromagnetic spintronic and valleytronic applications.
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Submitted 17 August, 2025;
originally announced August 2025.
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Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Authors:
Akash Gugnani,
Aniket Majumdar,
Kenji Watanabe,
Takashi Taniguchi,
Arindam Ghosh
Abstract:
Over the past decade, graphene has emerged as a promising candidate for exploring the viscous nature of electronic flow facilitated by the availability of extremely high-quality devices employing a graphene channel encapsulated within dielectric layers of hexagonal boron nitride (hBN). However, the level of disorder in such systems is mainly determined by the device fabrication protocols, making i…
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Over the past decade, graphene has emerged as a promising candidate for exploring the viscous nature of electronic flow facilitated by the availability of extremely high-quality devices employing a graphene channel encapsulated within dielectric layers of hexagonal boron nitride (hBN). However, the level of disorder in such systems is mainly determined by the device fabrication protocols, making it impossible to obtain a tunability between the impurity-dominated and the viscous transport within the same device. In this work, using a combination of ultraviolet (UV) radiation and gate electric field, we have demonstrated a dynamic modulation of charge hydrodynamics, quantified in the thermal and electrical transport by the extent of departure from the Wiedemann-Franz (WF) Law in monolayer graphene devices at room temperature. We achieved this by tuning the disorder level continuously and reversibly using UV light to create transient trap states in the encapsulating hBN dielectric. With progressive UV radiation, we observed a dramatic increase in the momentum-relaxing scattering relative to that between the electrons and also the Lorentz number, by nearly a factor of ten, with increasing disorder, thereby approaching the restoration of the WF law in highly disordered graphene. Our experiments outline a potent strategy to tune the fundamental mechanism of charge flow in state-of-the-art graphene devices.
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Submitted 18 August, 2025; v1 submitted 14 August, 2025;
originally announced August 2025.
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Orbital dependent Coulomb drag in electron-hole bilayer graphene heterostructures
Authors:
Zuocheng Zhang,
Ruishi Qi,
Jingxu Xie,
Qize Li,
Takashi Taniguchi,
Kenji Watanabe,
Michael F. Crommie,
Feng Wang
Abstract:
We report Coulomb drag studies in an electron-hole bilayer graphene heterostructure in a magnetic field, where the orbital, spin, and valley degrees of freedom are lifted by the combined effects of exchange interaction, Zeeman energy, and vertical displacement field. Our device enables the application of a large vertical displacement field in both layers. In addition to the well-established strong…
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We report Coulomb drag studies in an electron-hole bilayer graphene heterostructure in a magnetic field, where the orbital, spin, and valley degrees of freedom are lifted by the combined effects of exchange interaction, Zeeman energy, and vertical displacement field. Our device enables the application of a large vertical displacement field in both layers. In addition to the well-established strong Coulomb drag between Landau levels with an orbital quantum number N = 0, we observe a Coulomb drag signal between the N = 1 Landau levels under a suitable vertical displacement field. As the displacement field increases further, the Coulomb drag signal between N = 1 Landau levels weakens, and a Coulomb drag signal emerges between the N = 0 and N = 1 Landau levels. These findings suggest the important roles of the orbital index and vertical displacement field in interlayer Coulomb interactions within the quantum Hall regime of coupled bilayer systems.
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Submitted 12 August, 2025;
originally announced August 2025.
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Interlayer exciton condensates between second Landau level orbitals in double bilayer graphene
Authors:
Zeyu Hao,
A. M. Zimmerman,
Kenji Watanabe,
Takashi Taniguchi,
Philip Kim
Abstract:
We present Coulomb-drag measurements on a heterostructure comprising two Bernal-stacked bilayer graphene (BLG) sheets separated by a 2.5 nm hexagonal boron nitride (hBN) spacer in the quantum Hall (QH) regime. Using top and bottom gate control, together with an interlayer bias, we independently tune the two BLG layers into either the lowest (N = 0) or second (N = 1) Landau level (LL) orbital and p…
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We present Coulomb-drag measurements on a heterostructure comprising two Bernal-stacked bilayer graphene (BLG) sheets separated by a 2.5 nm hexagonal boron nitride (hBN) spacer in the quantum Hall (QH) regime. Using top and bottom gate control, together with an interlayer bias, we independently tune the two BLG layers into either the lowest (N = 0) or second (N = 1) Landau level (LL) orbital and probe their interlayer QH states. When both layers occupy the N = 0 orbital, we observe both interlayer exciton condensates (ECs) at integer total filling and interlayer fractional QH states, echoing the results in double monolayer graphene. In contrast to previous studies, however, when both BLG layers occupy the N = 1 orbital, we also observe quantized drag signals, signifying an interlayer exciton condensate formed between the second LLs. By tuning the layer degree of freedom, we find that this N = 1 EC state arises only when the N = 1 wavefunction in each BLG is polarized toward the hBN interface to maximize the interlayer Coulomb interaction.
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Submitted 12 August, 2025;
originally announced August 2025.
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Ferroelectric Control of Interlayer Excitons in 3R-MoS$_{2}$ / MoSe$_{2}$ Heterostructures
Authors:
Johannes Schwandt-Krause,
Mohammed El Amine Miloudi,
Elena Blundo,
Swarup Deb,
Jan-Niklas Heidkamp,
Kenji Watanabe,
Takashi Taniguchi,
Rico Schwartz,
Andreas Stier,
Jonathan J. Finley,
Oliver Kühn,
Tobias Korn
Abstract:
We investigate the interaction between interlayer excitons and ferroelectric domains in hBN-encapsulated 3R-MoS$_2$/MoSe$_2$ heterostructures, combining photoluminescence experiments with density functional theory and many-body Green's function calculations. Low-temperature photoluminescence spectroscopy reveals a strong redshift of the interlayer exciton energy with increasing MoS$_2$ layer thick…
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We investigate the interaction between interlayer excitons and ferroelectric domains in hBN-encapsulated 3R-MoS$_2$/MoSe$_2$ heterostructures, combining photoluminescence experiments with density functional theory and many-body Green's function calculations. Low-temperature photoluminescence spectroscopy reveals a strong redshift of the interlayer exciton energy with increasing MoS$_2$ layer thickness, attributed to band renormalization and dielectric effects. We observe local variations in exciton energy that correlate with local ferroelectric domain polarization of the 3R-MoS$_2$ layer, showcasing distinct domain-dependent interlayer exciton transition energies. Gate voltage experiments demonstrate that the interlayer exciton energy can be tuned by electrically induced domain switching. These results highlight the potential for interlayer exciton control by local ferroelectric order and establish a foundation for future ferroelectric optoelectronic devices based on van der Waals heterostructures.
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Submitted 30 September, 2025; v1 submitted 12 August, 2025;
originally announced August 2025.
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Condensed Spin Excitation of Quantized Dirac Fermions in the Quasi-Two-Dimensional semimetal BaMnBi$_2$
Authors:
Masashi Kumazaki,
Azimjon Temurjonov,
Yukihiro Watanabe,
Taku Matsuhita,
Yoshiaki Kobayashi,
Yasuhiro Shimizu
Abstract:
Three-dimensional Dirac semimetals enable the observation of bulk magnetism in topological quantum phases. We report site-selective NMR spectroscopy that probes local static and dynamic spin susceptibility on the magnetic semimetal BaMnBi$_2$. We find that spontaneous staggered fields from antiferromagnetic Mn moments are completely canceled at the Bi layer hosting Dirac fermions. In an in-plane f…
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Three-dimensional Dirac semimetals enable the observation of bulk magnetism in topological quantum phases. We report site-selective NMR spectroscopy that probes local static and dynamic spin susceptibility on the magnetic semimetal BaMnBi$_2$. We find that spontaneous staggered fields from antiferromagnetic Mn moments are completely canceled at the Bi layer hosting Dirac fermions. In an in-plane field, the nuclear spin-lattice relaxation rate $1/T_1$ follows the cubic temperature dependence to low temperatures, manifesting the ideal Dirac semimetal with chemical potential close to the Dirac point. In an out-of-plane field, $1/T_1$ becomes a constant below 20 K, where the Laudau level appears, and is enhanced more than 100 times larger than under the in-plane field. The result demonstrates a condensation of quantized Dirac fermions in the quantum Hall regime.
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Submitted 11 August, 2025;
originally announced August 2025.
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Ferroelectric switching of interfacial dipoles in $α$-RuCl$_3$/graphene heterostructure
Authors:
Soyun Kim,
Jo Hyun Yun,
Takashi Taniguchi,
Kenji Watanabe,
Joseph Falson,
Jun Sung Kim,
Kyung-Hwan Jin,
Gil Young Cho,
Youngwook Kim
Abstract:
We demonstrate electrically switchable, non-volatile dipoles in graphene/thin hBN/$α$-RuCl$_3$ heterostructures, stabilized purely by interfacial charge transfer across an atomically thin dielectric barrier. This mechanism requires no sliding or twisting to explicitly break inversion symmetry and produces robust ferroelectric-like hysteresis loops that emerge prominently near 30~K. Systematic meas…
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We demonstrate electrically switchable, non-volatile dipoles in graphene/thin hBN/$α$-RuCl$_3$ heterostructures, stabilized purely by interfacial charge transfer across an atomically thin dielectric barrier. This mechanism requires no sliding or twisting to explicitly break inversion symmetry and produces robust ferroelectric-like hysteresis loops that emerge prominently near 30~K. Systematic measurements under strong in-plane and out-of-plane magnetic fields reveal negligible effects on the hysteresis characteristics, confirming that the primary mechanism driving the dipole switching is electrostatic. Our findings establish a distinct and robust route to electrically tunable ferroelectric phenomena in van der Waals heterostructures, opening opportunities to explore the interplay between interfacial charge transfer and temperature-tuned barrier crossing of dipole states at the atomic scale.
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Submitted 10 August, 2025;
originally announced August 2025.
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Imaging 3D Printed Fracture Networks under Stress using X-Ray Computed Tomography
Authors:
A. Patsoukis Dimou,
Q. Lei,
N. Watanabe,
A. Suzuki
Abstract:
We present a novel experimental approach based on 3D printing and X-ray computed tomography to characterize fracture aperture distribution and evolution in 3D fracture networks under varying stress loading conditions. We validate our methodology by comparing experimentally measured stress-dependent fracture apertures with both analytical solutions and numerical simulations, for both single fractur…
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We present a novel experimental approach based on 3D printing and X-ray computed tomography to characterize fracture aperture distribution and evolution in 3D fracture networks under varying stress loading conditions. We validate our methodology by comparing experimentally measured stress-dependent fracture apertures with both analytical solutions and numerical simulations, for both single fracture and fracture network scenarios. We show that, for fracture deformation under linear elastic regime, our experimental results agree with numerical simulation. Furthermore, by combining our new experimental methodology with advanced numerical simulations, we illuminate the complex interplay of stress and topology in fracture network deformation. Our approach opens the door for experimentally observing deformable fracture networks under stress in 3D space, which has significant implications for understanding and predicting many geophysical problems involving fractured geological media.
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Submitted 5 August, 2025;
originally announced August 2025.