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Condensed Matter > Materials Science

arXiv:2508.08911 (cond-mat)
[Submitted on 12 Aug 2025 (v1), last revised 30 Sep 2025 (this version, v2)]

Title:Ferroelectric Control of Interlayer Excitons in 3R-MoS$_{2}$ / MoSe$_{2}$ Heterostructures

Authors:Johannes Schwandt-Krause, Mohammed El Amine Miloudi, Elena Blundo, Swarup Deb, Jan-Niklas Heidkamp, Kenji Watanabe, Takashi Taniguchi, Rico Schwartz, Andreas Stier, Jonathan J. Finley, Oliver Kühn, Tobias Korn
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Abstract:We investigate the interaction between interlayer excitons and ferroelectric domains in hBN-encapsulated 3R-MoS$_2$/MoSe$_2$ heterostructures, combining photoluminescence experiments with density functional theory and many-body Green's function calculations. Low-temperature photoluminescence spectroscopy reveals a strong redshift of the interlayer exciton energy with increasing MoS$_2$ layer thickness, attributed to band renormalization and dielectric effects. We observe local variations in exciton energy that correlate with local ferroelectric domain polarization of the 3R-MoS$_2$ layer, showcasing distinct domain-dependent interlayer exciton transition energies. Gate voltage experiments demonstrate that the interlayer exciton energy can be tuned by electrically induced domain switching. These results highlight the potential for interlayer exciton control by local ferroelectric order and establish a foundation for future ferroelectric optoelectronic devices based on van der Waals heterostructures.
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:2508.08911 [cond-mat.mtrl-sci]
  (or arXiv:2508.08911v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2508.08911

Submission history

From: Tobias Korn [view email]
[v1] Tue, 12 Aug 2025 13:01:52 UTC (7,783 KB)
[v2] Tue, 30 Sep 2025 08:34:48 UTC (6,442 KB)
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