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The unidirectional Seebeck detection of the Néel vector in the two-dimensional tetragonal $\mathcal{PT}$-symmetric antiferromagnetic materials
Authors:
Ya-Ting Xiao,
Ying-Li Wu,
Jia-Liang Wan,
Xiao-Qin Yu
Abstract:
The efficient detection of the reversal (180$^{\circ}$ rotation) of the Néel vector is one of the crucial tasks in antiferromagnetic spintronics. Here, we propose a thermal approach to detect the reversal of the Néel vector in the tetragonal $\mathcal{PT}$ antiferromagnetic materials through the unidirectional Seebeck effect (USE). Being different from the previous works in which USE stems from th…
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The efficient detection of the reversal (180$^{\circ}$ rotation) of the Néel vector is one of the crucial tasks in antiferromagnetic spintronics. Here, we propose a thermal approach to detect the reversal of the Néel vector in the tetragonal $\mathcal{PT}$ antiferromagnetic materials through the unidirectional Seebeck effect (USE). Being different from the previous works in which USE stems from the global Rashba spin-orbit coupling (SOC) or asymmetric magnon scattering, we find that the USE originates from the coupling of the hidden Rashba SOC and the Néel vector in the tetragonal $\mathcal{PT}$ antiferromagnetic materials in the absence of the global Rashba SOC. Using a generic minimal model, we analyse the behaviors of the USE for the two-dimensional tetragonal lattice $\mathcal{PT}$ antiferromagnet. Importantly, It's found that when the Néel vector is reversed, the sign of the USE changes, which can be utilized to detect the reversal of the Néel vector.
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Submitted 5 May, 2025;
originally announced May 2025.
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Extrinsic nonlinear acoustic valley Hall effect in the massive Dirac materials
Authors:
Jia-Liang Wan,
Ying-Li Wu,
Ke-Qiu Chen,
Xiao-Qin Yu
Abstract:
The nonlinear acoustic valley Hall effect (AVHE), a recently discovered novel acoustically driven phenomena, has sparked extensive interests in valleytronics. So far, only the intrinsic contributions from band structure (Berry curvature or asymmetric energy dispersions) to nonlinear AVHE have been investigated. Here, we theoretically investigate the nonlinear AVHE from both intrinsic and extrinsic…
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The nonlinear acoustic valley Hall effect (AVHE), a recently discovered novel acoustically driven phenomena, has sparked extensive interests in valleytronics. So far, only the intrinsic contributions from band structure (Berry curvature or asymmetric energy dispersions) to nonlinear AVHE have been investigated. Here, we theoretically investigate the nonlinear AVHE from both intrinsic and extrinsic contributions in two-dimensional (2D) hexagonal massive Dirac materials with disorders based on the Boltzmann formalism and also concretely analyse the behaviours of nonlinear AVHE in disordered monolayer MoS2. It's found that the extrinsic contributions (side jump and skew scattering) can also give rise to a pure nonlinear AVHE in the 2D hexagonal massive Dirac materials. Remarkably, the extrinsic mechanisms dominate the nonlinear AVHE in the disordered monolayer MoS2.
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Submitted 9 January, 2025;
originally announced January 2025.
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Dirac excited state quenching in graphene
Authors:
Jacky C. Wan,
Trevor B. Arp,
Nathaniel M. Gabor
Abstract:
Hot, dense phases of Dirac fermions - predicted to resemble relativistic plasma - are uniquely accessible through photoexcitation of pristine, charge neutral graphene. We demonstrate a sensitive temperature probe of the photoexcited Dirac state, called interlayer optoelectronic thermometry, which measures out-of-plane transport of hot carriers in high-mobility, neutral graphene encapsulated within…
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Hot, dense phases of Dirac fermions - predicted to resemble relativistic plasma - are uniquely accessible through photoexcitation of pristine, charge neutral graphene. We demonstrate a sensitive temperature probe of the photoexcited Dirac state, called interlayer optoelectronic thermometry, which measures out-of-plane transport of hot carriers in high-mobility, neutral graphene encapsulated within graphene-hBN-graphene heterostructures. At a critical intermediate sample temperature T = 50 K, the electronic temperature Te is quenched, exhibiting an intrinsic cooling rate that exceeds 10^14 Kelvin/s within the first picosecond after photoexcitation. Quenching is further enhanced by applying in-plane voltages within the stack-engineered heterostructure. Extreme sensitivity of Te to sample temperature and applied voltages reveals anomalously efficient hot-carrier quenching, which we identify as an essential feature of the strongly interacting hot Dirac excited state.
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Submitted 4 September, 2024;
originally announced September 2024.
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Operando probing of nanocracking in CuO-derived Cu during CO$_2$ electroreduction
Authors:
Jiawei Wan,
Ershuai Liu,
Woong Choi,
Jiayun Liang,
Buyu Zhang,
Keon-Han Kim,
Xianhu Sun,
Meng Zhang,
Han Xue,
Yi Chen,
Qiubo Zhang,
Changlian Wen,
Ji Yang,
Karen C. Bustillo,
Peter Ercius,
Denis Leshchev,
Ji Su,
Zakaria Y. Al Balushi,
Adam Z. Weber,
Mark Asta,
Alexis T. Bell,
Walter S. Drisdell,
Haimei Zheng
Abstract:
Identifying and controlling active sites in electrocatalysis remains a grand challenge due to restructuring of catalysts in the complex chemical environments during operation. Inactive precatalysts can transform into active catalysts under reaction conditions, such as oxide-derived Cu (OD-Cu) for CO$_2$ electroreduction displaying improved production of multicarbon (C$_{2+}$) chemicals. Revealing…
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Identifying and controlling active sites in electrocatalysis remains a grand challenge due to restructuring of catalysts in the complex chemical environments during operation. Inactive precatalysts can transform into active catalysts under reaction conditions, such as oxide-derived Cu (OD-Cu) for CO$_2$ electroreduction displaying improved production of multicarbon (C$_{2+}$) chemicals. Revealing the mechanism of active site origin in OD-Cu catalysts requires in situ/operando characterizations of structure, morphology, and valence state evolution with high spatial and temporal resolution. Applying newly developed electrochemical liquid cell transmission electron microscopy combined with X-ray absorption spectroscopy, our multimodal operando techniques unveil the formation pathways of OD-Cu active sites from CuO bicrystal nanowire precatalysts. Rapid reduction of CuO directly to Cu within 60 seconds generates a nanocrack network throughout the nanowire, via formation of "boundary nanocracks" along the twin boundary and "transverse nanocracks" propagating from the surface to the center of the nanowire. The nanocrack network further reconstructs, leading to a highly porous structure rich in Cu nanograins, with a boosted specific surface area and density of active sites for C$_{2+}$ products. These findings suggest a means to optimize active OD-Cu nanostructures through nanocracking by tailoring grain boundaries in CuO precatalysts. More generally, our advanced operando approach opens new opportunities for mechanistic insights to enable improved control of catalyst structure and performance.
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Submitted 23 July, 2024;
originally announced July 2024.
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Magnetic structure and magnetoelectric coupling in antiferromagnet Co5(TeO3)4Cl2
Authors:
B. Yu,
L. Huang,
J. S. Li,
L. Lin,
V. Ovidiu Garlea,
Q. Zhang,
T. Zou,
J. C. Zhang,
J. Peng,
Y. S. Tang,
G. Z. Zhou,
J. H. Zhang,
S. H. Zheng,
M. F. Liu,
Z. B. Yan,
X. H. Zhou,
S. Dong,
J. G. Wan,
J. -M. Liu
Abstract:
The van der Waals (vdW) layered multiferroics, which host simultaneous ferroelectric and magnetic orders, have attracted attention not only for their potentials to be utilized in nanoelectric devices and spintronics, but also offer alternative opportunities for emergent physical phenomena. To date, the vdW layered multiferroic materials are still very rare. In this work, we have investigated the m…
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The van der Waals (vdW) layered multiferroics, which host simultaneous ferroelectric and magnetic orders, have attracted attention not only for their potentials to be utilized in nanoelectric devices and spintronics, but also offer alternative opportunities for emergent physical phenomena. To date, the vdW layered multiferroic materials are still very rare. In this work, we have investigated the magnetic structure and magnetoelectric effects in Co5(TeO3)4Cl2, a promising new multiferroic compound with antiferromagnetic (AFM) Neel point TN = 18 K. The neutron powder diffraction reveals the non-coplanar AFM state with preferred Neel vector along the c-axis, while a spin re-orientation occurring between 8 K and 15 K is identified, which results from the distinct temperature dependence of the non-equivalent Co sites moment in Co5(TeO3)4Cl2. What is more, it is found that Co5(TeO3)4Cl2 is one of the best vdW multiferroics studied so far in terms of the multiferroic performance. The measured linear ME coefficient exhibits the emergent oscillation dependence of the angle between magnetic field and electric field, and the maximal value is as big as 45 ps/m. It is suggested that Co5(TeO3)4Cl2 is an appreciated platform for exploring the emergent multiferroicity in vdW layered compounds.
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Submitted 15 May, 2024;
originally announced May 2024.
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Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor
Authors:
Feng Wang,
Wangqiang Shen,
Yuan Shui,
Jun Chen,
Huaiqiang Wang,
Rui Wang,
Yuyuan Qin,
Xuefeng Wang,
Jianguo Wan,
Minhao Zhang,
Xing Lu,
Tao Yang,
Fengqi Song
Abstract:
Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we d…
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Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8 μB to 5.1 μB for the ground-state GN at an electric field strength of 3-10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage.
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Submitted 17 March, 2024;
originally announced March 2024.
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Strongly enhanced nonlinear acoustic valley Hall effect in tilted Dirac materials
Authors:
Jia-Liang Wan,
Ying-Li Wu,
Ke-Qiu Chen,
Xiao-Qin Yu
Abstract:
It has been recently established that a nonlinear valley current could be generated through traveling a surface acoustic wave (SAW) in two-dimensional Dirac materials. So far, the SAW-driven valley currents have been attributed to warping Fermi surface or Berry phase effect. Here, we demonstrate that tilt mechanism can also lead to a nonlinear valley Hall current (VHC) when propagating SAW in mate…
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It has been recently established that a nonlinear valley current could be generated through traveling a surface acoustic wave (SAW) in two-dimensional Dirac materials. So far, the SAW-driven valley currents have been attributed to warping Fermi surface or Berry phase effect. Here, we demonstrate that tilt mechanism can also lead to a nonlinear valley Hall current (VHC) when propagating SAW in materials with the tilted Dirac cone placed on a piezoelectric substrate. It's found that the nonlinear VHC exhibits a $\sinθ$ dependence on the orientation of tilt with respect to SAW. In addition, this tilt-induced nonlinear acoustic VHC shows independence on the relaxation time, distinguishing from the contributions from the Berry phase or trigonal warping. Remarkably, the magnitude of the nonlinear acoustic VHC from tilt mechanism in the uniaxially strained graphene is two orders larger than those reported in MoS$_2$ stemmed from the Berry phase effect and the warping effect.
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Submitted 1 March, 2024;
originally announced March 2024.
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Quantum nonlinear ac transport theory at low frequency
Authors:
Lei Zhang,
Fuming Xu,
Jian Chen,
Yanxia Xing,
Jian Wan
Abstract:
Based on the nonequilibrium Green's function (NEGF), we develop a quantum nonlinear theory to study time-dependent ac transport properties in the low frequency and nonlinear bias voltage regimes. By expanding NEGF in terms of time to the linear order in Wigner representation, we can explicitly include the time-dependent self-consistent Coulomb interaction induced by external ac bias. Hence this th…
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Based on the nonequilibrium Green's function (NEGF), we develop a quantum nonlinear theory to study time-dependent ac transport properties in the low frequency and nonlinear bias voltage regimes. By expanding NEGF in terms of time to the linear order in Wigner representation, we can explicitly include the time-dependent self-consistent Coulomb interaction induced by external ac bias. Hence this theory automatically satisfies two basic requirements, i.e., current conservation and gauge invariance. Within this theory, the nonlinear ac current can be evaluated at arbitrarily large bias voltages under the low frequency limit. In addition, we obtain the expression of time-dependent current under the wide band limit and derive the relation between the nonlinear electrochemical capacitance and the bias voltage, which are very useful in predicting the dynamical properties of nanoelectronic devices. This quantum theory can be directly combined with density functional theory to investigate time-dependent ac transport from first-principles calculation.
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Submitted 5 November, 2023;
originally announced November 2023.
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Unidirectional Seebeck effect from Rashba spin-orbit coupling on the subsurface of Ge(111)
Authors:
Ge-Hui Zhu,
Ying-Li Wu,
Jia-Liang Wan,
Xiao-Qin Yu
Abstract:
A new nonlinear magnetothermal effect, namely unidirectional Seebeck effect(USE), has been recently reported in magnetic/nonmagnetic topological insulator (TI) heterostructure and is ascribed to the asymmetry magnon scattering. Here, we show a new mechanism to generate USE in the Rashba two dimensional electron gas (2DEG), in which the magnetism or magnetic order is completely absent. It's found t…
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A new nonlinear magnetothermal effect, namely unidirectional Seebeck effect(USE), has been recently reported in magnetic/nonmagnetic topological insulator (TI) heterostructure and is ascribed to the asymmetry magnon scattering. Here, we show a new mechanism to generate USE in the Rashba two dimensional electron gas (2DEG), in which the magnetism or magnetic order is completely absent. It's found that the USE has a quantum origin from the spin-momentum locking generated from Rashba spin-orbit coupling. We find that the USE exhibits a sine dependence on the orientation of the magnetic field with respect to the direction of the temperature gradient and is dominant from the states above the Lifshitz point. The USE in the semiconductor Ge(111) subsurface states has been theoretically and systematically investigated.
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Submitted 4 April, 2023;
originally announced April 2023.
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Fano Interference in a Single-Molecule Junction
Authors:
Yiping Ouyang,
Rui Wang,
Deping Guo,
Yang-Yang Ju,
Danfeng Pan,
Xuecou Tu,
Lin Kang,
Jian Chen,
Peiheng Wu,
Xuefeng Wang,
Jianguo Wan,
Minhao Zhang,
Wei Ji,
Yuan-Zhi Tan,
Su-Yuan Xie,
Fengqi Song
Abstract:
Trends of miniaturized devices and quantum interference electronics lead to the long desire of Fano interference in single-molecule junctions, here, which is successfully demonstrated using the 2,7-di(4-pyridyl)-9,9'-spirobifluorene molecule with a long backbone group and a short side group. Experimentally, the two electrically coupled groups are found to contribute to two blurred degenerate point…
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Trends of miniaturized devices and quantum interference electronics lead to the long desire of Fano interference in single-molecule junctions, here, which is successfully demonstrated using the 2,7-di(4-pyridyl)-9,9'-spirobifluorene molecule with a long backbone group and a short side group. Experimentally, the two electrically coupled groups are found to contribute to two blurred degenerate points in the differential conductance mapping. This forms a characteristic non-centrosymmetric double-crossing feature, with distinct temperature response for each crossing. Theoretically, we describe the practical in-junction electron transmission using a new two-tunnelling-channel coupling model and obtain a working formula with a Fano term and a Breit-Wigner term. The formula is shown to provide a good fit for all the mapping data and their temperature dependence in three dimensions, identifying the Fano component. Our work thus forms a complete set of evidence of the Fano interference in a single-molecule junction induced by two-tunnelling-channel coupling transport. Density functional theory calculations are used to corroborate this new physics.
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Submitted 18 August, 2022;
originally announced August 2022.
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Strong structural and electronic coupling in metavalent PbS moire superlattices
Authors:
Yu Wang,
Zhigang Song,
Jiawei Wan,
Sophia Betzler,
Yujun Xie,
Colin Ophus,
Karen C. Bustillo,
Peter Ercius,
Lin-Wang Wang,
Haimei Zheng
Abstract:
Moire superlattices are twisted bilayer materials, in which the tunable interlayer quantum confinement offers access to new physics and novel device functionalities. Previously, moire superlattices were built exclusively using materials with weak van der Waals interactions and synthesizing moire superlattices with strong interlayer chemical bonding was considered to be impractical. Here using lead…
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Moire superlattices are twisted bilayer materials, in which the tunable interlayer quantum confinement offers access to new physics and novel device functionalities. Previously, moire superlattices were built exclusively using materials with weak van der Waals interactions and synthesizing moire superlattices with strong interlayer chemical bonding was considered to be impractical. Here using lead sulfide (PbS) as an example, we report a strategy for synthesizing of moire superlattices coupled by strong chemical bonding. We use water-soluble ligands as a removable template to obtain free-standing ultra-thin PbS nanosheets and assemble them into direct-contact bilayers with various twist angles. Atomic-resolution imaging shows the moire periodic structural reconstruction at superlattice interface, due to the strong metavalent coupling. Electron energy loss spectroscopy and theoretical calculations collectively reveal the twist angle26 dependent electronic structure, especially the emergent separation of flat bands at small twist angles. The localized states of flat bands are similar to well-arranged quantum dots, promising an application in devices. This study opens a new door to the exploration of deep energy modulations within moire superlattices alternative to van der Waals twistronics.
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Submitted 22 July, 2022;
originally announced July 2022.
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A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect
Authors:
Fuyou Liao,
Jianan Deng,
Xinyu Chen,
Yin Wang,
Xinzhi Zhang,
Jian Liu,
Hao Zhu,
Lin Chen,
Qingqing Sun,
Weida Hu,
Jianlu Wang,
Jing Zhou,
Peng Zhou,
David Wei Zhang,
Jing Wan,
Wenzhong Bao
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect originated from the charge-trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response spee…
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Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect originated from the charge-trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity (R) and large dark current. Here, a dual-gated (DG) MoS2 phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top-gate voltage (VTG) and positive back-gate voltage (VBG) to the MoS2 channel, the photo-generated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ~1E5 A/W and detectivity (D*) of ~1E14 Jones have been achieved in several devices with different thickness under Pin of 53 uW/cm2 at VTG=-5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS2 DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. Our results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors.
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Submitted 17 December, 2019;
originally announced December 2019.
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High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
Authors:
Fuyou Liao,
Zhongxun Guo,
Yin Wang,
Yufeng Xie,
Simeng Zhang,
Yaochen Sheng,
Hongwei Tang,
Zihan Xu,
Antoine Riaud,
Peng Zhou,
Jing Wan,
Michael S. Fuhrer,
Xiangwei Jiang,
David Wei Zhang,
Yang Chai,
Wenzhong Bao
Abstract:
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structu…
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In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structure not only improves electrostatic control but also provides an extra degree of freedom for manipulating the threshold voltage (VTH) and SS by separately tuning the top and back gate voltages, which are demonstrated in a logic inverter. Dynamic random access memory (DRAM) has a short retention time because of large OFF-state current in the Si MOSFET. Based on our DG MoS2-FETs, and a DRAM unit cell with a long retention time of 1260 ms are realized. A large-scale isolated MoS2 DG-FETs based on CVD-synthesized continuous films is also demonstrated, which shows potential applications for future wafer-scale digital and low-power electronics.
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Submitted 17 December, 2019;
originally announced December 2019.
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Coherent X-ray measurement of step-flow propagation during growth on polycrystalline thin film surfaces
Authors:
Randall L. Headrick,
Jeffrey G. Ulbrandt,
Peco Myint,
Jing Wan,
Yang Li,
Andrei Fluerasu,
Yugang Zhang,
Lutz Wiegart,
Karl F. Ludwig, Jr
Abstract:
The properties of artificially grown thin films are strongly affected by surface processes during growth. Coherent X-rays provide an approach to better understand such processes and fluctuations far from equilibrium. Here we report results for vacuum deposition of C$_{60}$ on a graphene-coated surface investigated with X-ray Photon Correlation Spectroscopy in surface-sensitive conditions. Step-flo…
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The properties of artificially grown thin films are strongly affected by surface processes during growth. Coherent X-rays provide an approach to better understand such processes and fluctuations far from equilibrium. Here we report results for vacuum deposition of C$_{60}$ on a graphene-coated surface investigated with X-ray Photon Correlation Spectroscopy in surface-sensitive conditions. Step-flow is observed through measurement of the step-edge velocity in the late stages of growth after crystalline mounds have formed. We show that the step-edge velocity is coupled to the terrace length, and that there is a variation in the velocity from larger step spacing at the center of crystalline mounds to closely-spaced, more slowly propagating steps at their edges. The results extend theories of surface growth, since the behavior is consistent with surface evolution driven by processes that include surface diffusion, the motion of step-edges, and attachment at step edges with significant step-edge barriers.
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Submitted 5 May, 2019; v1 submitted 26 October, 2018;
originally announced October 2018.
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Machine learning valence force field model
Authors:
Jing Wan,
Ya-Wen Tan,
Jin-Wu Jiang,
Tienchong Chang,
Xingming Guo
Abstract:
The valence force field (VFF) model is a concise physical interpretation of the atomic interaction in terms of the bond and angle variations in the explicit quadratic functional form, while the machine learning (ML) method is a flexible numerical approach to make predictions based on some pre-obtained training data without the need of any explicit functions. We propose a so-called ML-VFF model, by…
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The valence force field (VFF) model is a concise physical interpretation of the atomic interaction in terms of the bond and angle variations in the explicit quadratic functional form, while the machine learning (ML) method is a flexible numerical approach to make predictions based on some pre-obtained training data without the need of any explicit functions. We propose a so-called ML-VFF model, by combining the clear physical essence of the VFF model and the numerical flexibility of the ML method. Instead of imposing any explicit functional forms for the atomic interaction, the ML-VFF model predicts the potential and force with the Gaussian regression approach. We take graphene as an example to illustrate the ability of the ML-VFF model to make accurate predictions with relatively low computational expenses. We also discuss some key advantages and drawbacks of the ML-VFF model.
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Submitted 5 August, 2018;
originally announced August 2018.
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Modulation of thermal conductivity in single-walled carbon nanotubes by fullerene encapsulation: enhancement or reduction?
Authors:
Jing Wan,
Jin-Wu Jiang
Abstract:
Fullerence encapsulation has been proven to be a powerful approach to enhance mechanical and electronic properties of the single-walled carbon nanotubes (SWCNTs). However, some discrepancies emerge in recent studies of the fullerence encapsulation effect on the thermal conductivity of SWCNTs. More specifically, most previous theoretical works predicted slightly enhancement of the thermal conductiv…
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Fullerence encapsulation has been proven to be a powerful approach to enhance mechanical and electronic properties of the single-walled carbon nanotubes (SWCNTs). However, some discrepancies emerge in recent studies of the fullerence encapsulation effect on the thermal conductivity of SWCNTs. More specifically, most previous theoretical works predicted slightly enhancement of the thermal conductivity, but the recent experiment by Kodama et al. (Nat. Mat. 16, 892 (2017)) observed clear reduction of the thermal conductivity in SWCNTs by fullerence encapsulation. We perform molecular dynamics simulations to revisit this issue, by comparatively investigate the thermal conductivity of the SWCNT (n, n) and the corresponding peapod (n, n) with n = 8, 9, 10, and 11. We find that the fullerence encapsulation can reduce the thermal conductivity of narrower SWCNTs with n = 8 and 9, but it can slightly enhance the thermal conductivity of thicker SWCNTs with n = 10 and 11. The underlying mechanisms for these opposite effects are explored by analyzing the encapsulation induced structural deformation and the variation of the phonon dispersion of the SWCNT. We illustrate that the reduction effect observed in the recent experiment is related to the mechanism for reduction of the thermal conductivity for narrower SWCNTs here, while previous numerical works correspond to the enhancement effect for thicker SWCNTs found in the present work. Our findings shed lights on clarifying the discrepancy between previous numerical predictions and experimental observations on the effect of the fullerence encapsulation on the thermal conductivity of the SWCNT.
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Submitted 10 May, 2018;
originally announced May 2018.
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Mechanical behavior of composite double wall nanotubes from carbon and phosphorous
Authors:
Kun Cai,
Jing Wan,
Likui Yang,
Ning Wei
Abstract:
Black phosphorus is not stable when it is exposed to air. When covered or terminated by single layer carbon atoms, such as graphene carbon nanotube, it is more strongly protected in the rapid degradation than the bare black phosphorus. Moreover, due to weak interaction between phosphorus atoms in black phosphorene, the nanotube obtained by curling single layer black phosphorus is not as stable as…
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Black phosphorus is not stable when it is exposed to air. When covered or terminated by single layer carbon atoms, such as graphene carbon nanotube, it is more strongly protected in the rapid degradation than the bare black phosphorus. Moreover, due to weak interaction between phosphorus atoms in black phosphorene, the nanotube obtained by curling single layer black phosphorus is not as stable as a carbon nanotube at finite temperature. In present work, we recommend a new 1D material, i.e., composite double wall nanotubes from a black phosphorus nanotube with a CNT. The dynamic response of the composite DWNTs is simulated using molecular dynamics approach. The effects of such factors as temperature, slenderness and configurations of DWNTs are discussed. Comparing with a single wall BPNT, the composite DWNTs under uniaxial compression shows some peculiar properties. When the BPNT is embedded in a CNT, the system will not collapse rapidly even if the BPNT has been damaged seriously.
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Submitted 15 July, 2016;
originally announced July 2016.
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Strength and Stability Analysis of a Single Walled Black Phosphorus Tube under Axial Compression
Authors:
Kun Cai,
Jing Wan,
Ning Wei,
Qinghua Qin
Abstract:
Few-layered black phosphorus materials recently attract much attention due to its special electronic properties. As a Consequence, the nano-tube from a single-layer black phosphorus has been theoretically built. The corresponding electronic properties of such black phosphorus nano-tube were also evaluated numerically.
Few-layered black phosphorus materials recently attract much attention due to its special electronic properties. As a Consequence, the nano-tube from a single-layer black phosphorus has been theoretically built. The corresponding electronic properties of such black phosphorus nano-tube were also evaluated numerically.
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Submitted 28 March, 2016;
originally announced March 2016.
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Thermal stability of a free nanotube from single-layer black phosphorus
Authors:
Kun Cai,
Jing Wan,
Ning Wei,
Haifang Cai,
Qing-Hua Qin
Abstract:
Similar to the carbon nanotube fabricated from graphene sheet, a black phosphorus nanotube (BPNT) also can theoretically be produced by curling the rectangular single-layer black phosphorus (SLBP). In present study, the effect of thermal vibration of atoms on the failure of a BPNT is investigated using molecular dynamics simulations. Two types of double-shell BPNTs, which are obtained by curling t…
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Similar to the carbon nanotube fabricated from graphene sheet, a black phosphorus nanotube (BPNT) also can theoretically be produced by curling the rectangular single-layer black phosphorus (SLBP). In present study, the effect of thermal vibration of atoms on the failure of a BPNT is investigated using molecular dynamics simulations. Two types of double-shell BPNTs, which are obtained by curling the rectangular SLBP along its armchair/pucker direction and zigzag direction (in-plane normal) respectively, are involved in simulation. At finite temperature, a bond on the outer shell of tube is under tension due to both of curvature of tube and serious thermal vibration of atoms. As the length of a bond with such elongation approaches its critical value, i.e., 0.279 nm, or the smallest distance between two nonbonding phosphorus atoms is over 0.389nm caused by great variation of bond angle, the tube fails quickly. The critical stable states of either an armchair or a zigzag BPNT at finite temperature are calculated and compared. To achieve a stable BPNT with high robustness, the curvature of the tube should be reduced or the tube should work at a lower temperature. Only when the BPNT has structural stability, it has a potential application as a nanowire in a future nano electro-mechanical system (NEMS).
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Submitted 22 December, 2015;
originally announced December 2015.
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Nucleation and strain-stabilization during organic semiconductor thin film deposition
Authors:
Yang Li,
Jing Wan,
Detlef-M. Smilgies,
Nicole Bouffard,
Richard Sun,
Randall L. Headrick
Abstract:
The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a su…
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The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135$^\circ$C.
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Submitted 30 July, 2016; v1 submitted 31 October, 2015;
originally announced November 2015.
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Transient phases during fast crystallization of organic thin films from solution
Authors:
Jing Wan,
Yang Li,
Jeffrey G. Ulbrandt,
Detlef-M. Smilgies,
Jonathan Hollin,
Adam C. Whalley,
Randall L. Headrick
Abstract:
We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C$_8$-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to $\approx$93$^\circ$C. The layered smectic liquid-crystalline phase of C$_8$-BTBT initially forms…
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We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C$_8$-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to $\approx$93$^\circ$C. The layered smectic liquid-crystalline phase of C$_8$-BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature $>$60$^\circ$C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s) mobility up to 3.0 cm$^2$/V-s has been observed.
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Submitted 30 September, 2015;
originally announced September 2015.
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Flexible Sensory Platform Based on an Electrolyte-Gated Oxide Neuron Transistor
Authors:
Ning Liu,
Li Qiang Zhu,
Ping Feng,
Chang Jin Wan,
Yang Hui Liu,
Yi Shi,
Qing Wan
Abstract:
Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuron transistors gated by solid-state electrolyte films are fabricated on flexible plastic substrates for biochemical sensing applications. When a quasi-static dual-gate laterally synergic sensing mode is adopted, the neuron transistor sensor shows a high pH sensitivity of ~105 mV/pH, which i…
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Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuron transistors gated by solid-state electrolyte films are fabricated on flexible plastic substrates for biochemical sensing applications. When a quasi-static dual-gate laterally synergic sensing mode is adopted, the neuron transistor sensor shows a high pH sensitivity of ~105 mV/pH, which is higher than the Nernst limit. Our results demonstrate that single-spike dynamic mode can remarkably improve the pH sensitivity, reduce response/recover time and power consumption. We also find that appropriate depression applied on the sensing gate electrode can further enhance the pH sensitivity and reduce the power consumption. Our flexible neuron transistors provide a new-concept sensory platform for biochemical detection with high sensitivity, rapid response and ultralow power consumption.
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Submitted 19 May, 2015;
originally announced May 2015.
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Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport
Authors:
Fucong Fei,
Qianjin Wang,
Zhongxia Wei,
Rui Wang,
Danfeng Pan,
Bo Zhao,
Xuefeng Wang,
Xinran Wang,
Fengqi Song,
Baigeng Wang,
Jianguo Wan,
Guanghou Wang
Abstract:
A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizonta…
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A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. A rectification curve was observed at low temperatures. Quantum correction from the weak antilocalization reveals the transport of the topological surface state. There was, therefore, a staggered-gap lateral heterojunction with a small junction voltage, which is appealing for a platform for spin filters and one-dimensional topological interface states.
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Submitted 1 March, 2015;
originally announced March 2015.
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Approaching the Limits of Transparency and Conductivity in Graphitic Materials through Lithium Intercalation
Authors:
Wenzhong Bao,
Jiayu Wan,
Xiaogang Han,
Xinghan Cai,
Hongli Zhu,
Dohun Kim,
Dakang Ma,
Yunlu Xu,
Jeremy Munday,
H. Dennis Drew,
Michael S. Fuhrer,
Liangbing Hu
Abstract:
Various bandstructure engineering methods have been studied to improve the performance of graphitic transparent conductors; however none demonstrated an increase of optical transmittance in the visible range. Here we measure in situ optical transmittance spectra and electrical transport properties of ultrathin-graphite (3-60 graphene layers) simultaneously via electrochemical lithiation/delithiati…
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Various bandstructure engineering methods have been studied to improve the performance of graphitic transparent conductors; however none demonstrated an increase of optical transmittance in the visible range. Here we measure in situ optical transmittance spectra and electrical transport properties of ultrathin-graphite (3-60 graphene layers) simultaneously via electrochemical lithiation/delithiation. Upon intercalation we observe an increase of both optical transmittance (up to twofold) and electrical conductivity (up to two orders of magnitude), strikingly different from other materials. Transmission as high as 91.7% with a sheet resistance of 3.0 Ω per square is achieved for 19-layer LiC6, which corresponds to a figure of merit σ_dc/σ_opt = 1400, significantly higher than any other continuous transparent electrodes. The unconventional modification of ultrathin-graphite optoelectronic properties is explained by the suppression of interband optical transitions and a small intraband Drude conductivity near the interband edge. Our techniques enable the investigation of other aspects of intercalation in nanostructures.
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Submitted 5 July, 2014;
originally announced July 2014.
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Artificial Synapse Network on Inorganic Proton Conductor for Neuromorphic Systems Applications
Authors:
Li Qiang Zhu,
Chang Jin Wan,
Li Qiang Guo,
Yi Shi,
Qing Wan
Abstract:
The basic units in our brain are neurons and each neuron has more than 1000 synapse connections. Synapse is the basic structure for information transfer in an ever-changing manner, and short-term plasticity allows synapses to perform critical computational functions in neural circuits. Therefore the major challenge for the hardware implementation of neuromorphic computation is to develop artificia…
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The basic units in our brain are neurons and each neuron has more than 1000 synapse connections. Synapse is the basic structure for information transfer in an ever-changing manner, and short-term plasticity allows synapses to perform critical computational functions in neural circuits. Therefore the major challenge for the hardware implementation of neuromorphic computation is to develop artificial synapse. Here, in-plane oxide-based artificial synapse network coupled by proton neurotransmitters are self-assembled on glass substrates at room-temperature. A strong lateral modulation is observed due to the proton migration in the nanogranular phosphorus-doped SiO2 electrolyte films. Functional roles of short-term plasticity, including paired-pulse facilitation, dynamic filtering and spatiotemporally correlated signal processing are mimicked. Such in-plane oxide-based protonic/electronic hybrid synapse network proposed here are interesting for building future neuromorphic systems.
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Submitted 3 November, 2013;
originally announced November 2013.
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Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets
Authors:
Taishi Chen,
Junhao Han,
Zhaoguo Li,
Fengqi Song,
Bo Zhao,
Xuefeng Wang,
Baigeng Wang,
Jianguo Wan,
Min Han,
Rong Zhang,
Guanghou Wang
Abstract:
Metallic Bi2Te3 crystalline sheets with the room-temperature resistivity of above 10 mΩ cm were prepared and their magnetoresistive transport was measured in a field of up to 9 Tesla. The Shubnikov de Haas oscillations were identified from the secondly-derived magnetoresistance curves. While changing the angle between the field and normal axis of the sheets, we find that the oscillation periods pr…
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Metallic Bi2Te3 crystalline sheets with the room-temperature resistivity of above 10 mΩ cm were prepared and their magnetoresistive transport was measured in a field of up to 9 Tesla. The Shubnikov de Haas oscillations were identified from the secondly-derived magnetoresistance curves. While changing the angle between the field and normal axis of the sheets, we find that the oscillation periods present a cosine dependence on the angle. This indicates a two-dimensional transport due to the surface state. The work reveals a resolvable surface contribution to the overall conduction even in a metallic topological insulator.
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Submitted 16 May, 2013;
originally announced May 2013.
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Learning and Spatiotemporally Correlated Functions Mimicked in Oxide-Based Artificial Synaptic Transistors
Authors:
Chang Jin Wan,
Li Qiang Zhu,
Yi Shi,
Qing Wan
Abstract:
Learning and logic are fundamental brain functions that make the individual to adapt to the environment, and such functions are established in human brain by modulating ionic fluxes in synapses. Nanoscale ionic/electronic devices with inherent synaptic functions are considered to be essential building blocks for artificial neural networks. Here, Multi-terminal IZO-based artificial synaptic transis…
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Learning and logic are fundamental brain functions that make the individual to adapt to the environment, and such functions are established in human brain by modulating ionic fluxes in synapses. Nanoscale ionic/electronic devices with inherent synaptic functions are considered to be essential building blocks for artificial neural networks. Here, Multi-terminal IZO-based artificial synaptic transistors gated by fast proton-conducting phosphosilicate electrolytes are fabricated on glass substrates. Proton in the SiO2 electrolyte and IZO channel conductance are regarded as the neurotransmitter and synaptic weight, respectively. Spike-timing dependent plasticity, short-term memory and long-term memory were successfully mimicked in such protonic/electronic hybrid artificial synapses. And most importantly, spatiotemporally correlated logic functions are also mimicked in a simple artificial neural network without any intentional hard-wire connections due to the naturally proton-related coupling effect. The oxide-based protonic/electronic hybrid artificial synaptic transistors reported here are potential building blocks for artificial neural networks.
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Submitted 26 April, 2013;
originally announced April 2013.
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Tunable All Electric Spin Polarizer
Authors:
J. Charles,
N. Bhandari,
J. Wan,
M. Cahay,
R. S. Newrock
Abstract:
We propose a new device to create a tunable all-electric spin polarizer: a quantum point contact (QPC) with four gates -- two in-plane side gates in series. The first pair of gates, near the source, is asymmetrically biased to create spin polarization in the QPC channel. The second set of gates, near the drain, is symmetrically biased and that bias is varied to maximize the amount of spin polariza…
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We propose a new device to create a tunable all-electric spin polarizer: a quantum point contact (QPC) with four gates -- two in-plane side gates in series. The first pair of gates, near the source, is asymmetrically biased to create spin polarization in the QPC channel. The second set of gates, near the drain, is symmetrically biased and that bias is varied to maximize the amount of spin polarization in the channel. The range of common mode bias on the first set of gates over which maximum spin polarization can be achieved is much broader for the four gate structure compared with the case of a single pair of in-plane side gates.
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Submitted 8 February, 2013;
originally announced February 2013.
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Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons
Authors:
Zhaoguo Li,
Taishi Chen,
Haiyang Pan,
Fengqi Song,
Baigeng Wang,
Junhao Han,
Yuyuan Qin,
Xuefeng Wang,
Rong Zhang,
Jianguo Wan,
Dingyu Xing,
Guanghou Wang
Abstract:
The universal conductance fluctuations (UCFs), one of the most important manifestations of mesoscopic electronic interference, have not yet been demonstrated for the two-dimensional surface state of topological insulators (TIs). Even if one delicately suppresses the bulk conductance by improving the quality of TI crystals, the fluctuation of the bulk conductance still keeps competitive and difficu…
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The universal conductance fluctuations (UCFs), one of the most important manifestations of mesoscopic electronic interference, have not yet been demonstrated for the two-dimensional surface state of topological insulators (TIs). Even if one delicately suppresses the bulk conductance by improving the quality of TI crystals, the fluctuation of the bulk conductance still keeps competitive and difficult to be separated from the desired UCFs of surface carriers. Here we report on the experimental evidence of the UCFs of the two-dimensional surface state in the bulk insulating Bi2Te2Se nanoribbons. The solely-B\perp-dependent UCF is achieved and its temperature dependence is investigated. The surface transport is further revealed by weak antilocalizations. Such survived UCFs of the topological surface states result from the limited dephasing length of the bulk carriers in ternary crystals. The electron-phonon interaction is addressed as a secondary source of the surface state dephasing based on the temperature-dependent scaling behavior.
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Submitted 10 July, 2012;
originally announced July 2012.
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Visualizing plasmon coupling in closely-spaced chains of Ag nanoparticles by electron energy loss spectroscopy
Authors:
Fengqi Song,
Tingyu Wang,
Xuefeng Wang,
Changhui Xu,
Longbing He,
Jianguo Wan,
Chris Van Haesendonck,
Simon P. Ringer,
Min Han,
Zongwen Liu,
Guanghou Wang
Abstract:
Anisotropic plasmon coupling in closely-spaced chains of Ag nanoparticles was visualized using the electron energy loss spectroscopy in a scanning transmission electron microscope. For dimers as the simplest chain, mapping the plasmon excitations with nanometers' spatial resolution and 0.27 eV energy resolution intuitively identified two coupling plasmons. The in-phase mode redshifted from the ult…
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Anisotropic plasmon coupling in closely-spaced chains of Ag nanoparticles was visualized using the electron energy loss spectroscopy in a scanning transmission electron microscope. For dimers as the simplest chain, mapping the plasmon excitations with nanometers' spatial resolution and 0.27 eV energy resolution intuitively identified two coupling plasmons. The in-phase mode redshifted from the ultraviolet region as the inter-particle spacing was reduced, reaching the visible range at 2.7 eV. Calculations based on the discrete dipole approximation confirmed its optical activeness, where the longitudinal direction was constructed as the path for light transportation. Two coupling paths were then observed in an inflexed 4-particle chain.
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Submitted 12 February, 2012;
originally announced February 2012.
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Solar Energy Generation in Three Dimensions
Authors:
Marco Bernardi,
Nicola Ferralis,
Jin H. Wan,
Rachelle Villalon,
Jeffrey C. Grossman
Abstract:
We formulate, solve computationally and study experimentally the problem of collecting solar energy in three dimensions(1-5). We demonstrate that absorbers and reflectors can be combined in the absence of sun tracking to build three-dimensional photovoltaic (3DPV) structures that can generate measured energy densities (energy per base area, kWh/m2) higher by a factor of 2-20 than stationary flat P…
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We formulate, solve computationally and study experimentally the problem of collecting solar energy in three dimensions(1-5). We demonstrate that absorbers and reflectors can be combined in the absence of sun tracking to build three-dimensional photovoltaic (3DPV) structures that can generate measured energy densities (energy per base area, kWh/m2) higher by a factor of 2-20 than stationary flat PV panels, versus an increase by a factor of 1.3-1.8 achieved with a flat panel using dual-axis sun tracking(6). The increased energy density is countered by a higher solar cell area per generated energy for 3DPV compared to flat panel design (by a factor of 1.5-4 in our conditions), but accompanied by a vast range of improvements. 3DPV structures are steadier sources of solar energy generation at all latitudes: they can double the number of peak power generation hours and dramatically reduce the seasonal, latitude and weather variations of solar energy generation compared to a flat panel design. Self-supporting 3D shapes can create new schemes for PV installation and the increased energy density can facilitate the use of cheaper thin film materials in area-limited applications. Our findings suggest that harnessing solar energy in three dimensions can open new avenues towards Terawatt-scale generation.
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Submitted 10 March, 2012; v1 submitted 14 December, 2011;
originally announced December 2011.
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Anamolous conductance plateau in an asymmetrically biased InAs/InAlAs quantum point contact
Authors:
P. P. Das,
K. B. Chetry,
N. Bhandari,
J. Wan,
M. Cahay,
R. S. Newrock,
S. T. Herbert
Abstract:
The appearance and evolution of an anomalous conductance plateau at 0.4 (in units of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T=4.2K as a function of the potential asymmetry between the in-plane gates of the QPC. The anomalous plateau, a signature of spin polarization in the channel, appears only over an inter…
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The appearance and evolution of an anomalous conductance plateau at 0.4 (in units of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T=4.2K as a function of the potential asymmetry between the in-plane gates of the QPC. The anomalous plateau, a signature of spin polarization in the channel, appears only over an intermediate range (around 3 V) of bias asymmetry. It is quite robust, being observed over a maximum range of nearly 1V of the sweep voltage common to the two in-plane gates. Our conductance measurements show evidence of surface roughness scattering from the side walls of the QPC. We show that a strong perpendicular magnetic field leads to magnetic confinement in the channel which reduces the importance of scattering from the side walls and favors the onset of near ballistic transport through the QPC.
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Submitted 13 July, 2011;
originally announced July 2011.
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Influence of Impurity Scattering on the Conductance Anomalies of Quantum Point Contacts with Lateral Spin-Orbit Coupling
Authors:
J. Wan,
M. Cahay,
P. P. Das,
R. S. Newrock
Abstract:
We have recently shown that asymmetric lateral spin orbit coupling (LSOC) resulting from the lateral in-plane electric field of the confining potential of a side-gated quantum point contact (QPC) can be used to create a strongly spin- polarized current by purely electrical means1 in the absence of applied magnetic field. Using the non-equilibrium Green function formalism (NEGF) analysis of a small…
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We have recently shown that asymmetric lateral spin orbit coupling (LSOC) resulting from the lateral in-plane electric field of the confining potential of a side-gated quantum point contact (QPC) can be used to create a strongly spin- polarized current by purely electrical means1 in the absence of applied magnetic field. Using the non-equilibrium Green function formalism (NEGF) analysis of a small model QPC2, three ingredients were found to be essential to generate the strong spin polarization: an asymmetric lateral confinement, a LSOC induced by the lateral confining potential of the QPC, and a strong electron-electron (e-e) interaction. In this paper, NEGF is used to study how the spin polarization is affected by the presence of impurities in the central portion of the QPC. It is found that the number, location, and shape of the conductance anomalies, occurring below the first quantized conductance plateau (G0=2e2/h), are strongly dependent on the nature (attractive or repulsive) and the locations of the impurities. We show that the maximum of the conductance spin polarization is affected by the presence of impurities. For QPCs with impurities off-center, a conductance anomaly appears below the first integer step even for the case of symmetric bias on the two side gates. These results are of practical importance if QPCs in series are to be used to fabricate all-electrical spin valves with large ON/OFF conductance ratio.
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Submitted 10 July, 2011;
originally announced July 2011.
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Calibrating the atomic balance by carbon nanoclusters
Authors:
Fengqi Song,
Xuefeng Wang,
Rebecca C. Powles,
Longbing He,
Nigel A. Marks,
Shifeng Zhao,
Jianguo Wan,
Zongwen Liu,
Jianfeng Zhou,
Simon Ringer,
Min Han,
Guanghou Wang
Abstract:
Carbon atoms are counted at near atomic-level precision using a scanning transmission electron microscope calibrated by carbon nanocluster mass standards. A linear calibration curve governs the working zone from a few carbon atoms up to 34,000 atoms. This linearity enables adequate averaging of the scattering cross sections, imparting the experiment with near atomic-level precision despite the use…
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Carbon atoms are counted at near atomic-level precision using a scanning transmission electron microscope calibrated by carbon nanocluster mass standards. A linear calibration curve governs the working zone from a few carbon atoms up to 34,000 atoms. This linearity enables adequate averaging of the scattering cross sections, imparting the experiment with near atomic-level precision despite the use of a coarse mass reference. An example of this approach is provided for thin layers of stacked graphene sheets. Suspended sheets with a thickness below 100 nm are visualized, providing quantitative measurement in a regime inaccessible to optical and scanning probe methods.
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Submitted 3 December, 2010;
originally announced December 2010.
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Experimental evidence on the Altshuler-Aronov-Spivak interference of the topological surface states in the exfoliated Bi2Te3 nanoflakes
Authors:
Yuyuan Qin,
Zhaoguo Li,
Fengqi Song,
Qianghua Wang,
Wangfeng Ding,
Xuefeng Wang,
Haifeng Ding,
Baigeng Wang,
Chris Van Haesondonck,
Jianguo Wan,
Min Han,
Y. H. Zhang,
Guanghou Wang
Abstract:
Here we demonstrate the Altshuler-Aronov-Spivak (AAS) interference of the topological surface states on the exfoliated Bi2Te3 microflakes by a flux period of h/2e in their magnetoresistance oscillations and its weak field character. Both the osillations with the period of h/e and h/2e are observed. The h/2e-period AAS oscillation gradually dominates with increasing the sample widths and the temper…
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Here we demonstrate the Altshuler-Aronov-Spivak (AAS) interference of the topological surface states on the exfoliated Bi2Te3 microflakes by a flux period of h/2e in their magnetoresistance oscillations and its weak field character. Both the osillations with the period of h/e and h/2e are observed. The h/2e-period AAS oscillation gradually dominates with increasing the sample widths and the temperatures. This reveals the transition of the Dirac Fermions' transport to the diffusive regime.
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Submitted 12 February, 2012; v1 submitted 1 December, 2010;
originally announced December 2010.
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Semi-permeable vesicles composed of natural clay
Authors:
Anand B. Subramaniam,
Jiandi Wan,
Arvind Gopinath,
Howard A. Stone
Abstract:
We report a simple route to form robust, inorganic, semi-permeable compartments composed of montmorillonite, a natural plate-like clay mineral that occurs widely in the environment. Mechanical forces due to shear in a narrow gap assemble clay nanoplates from an aqueous suspension onto air bubbles. Translucent vesicles suspended in a single-phase liquid are produced when the clay-covered air bubble…
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We report a simple route to form robust, inorganic, semi-permeable compartments composed of montmorillonite, a natural plate-like clay mineral that occurs widely in the environment. Mechanical forces due to shear in a narrow gap assemble clay nanoplates from an aqueous suspension onto air bubbles. Translucent vesicles suspended in a single-phase liquid are produced when the clay-covered air bubbles are exposed to a variety of water-miscible organic liquids. These vesicles of clay are mechanically robust and are stable in water and other liquids. The formation of clay vesicles can be described by a physical mechanism that recognizes changes in the wetting characteristics of clay-covered air bubbles in organic liquids. The clay vesicles are covered with small pores and so intrinsically exhibit size-selective permeability, which allows spontaneous compartmentalization of self-assembling molecules in aqueous environments. The results we report here expand our understanding of potential paths to micro-compartmentalization in natural settings and are of relevance to theories of colloidal aggregation, mineral cycles, and the origins of life.
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Submitted 21 November, 2010;
originally announced November 2010.
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Spin Texture in Quantum Point Contacts in the Presence of Lateral Spin Orbit Coupling
Authors:
J. Wan,
M. Cahay,
P. Debray,
R. S. Newrock
Abstract:
A non-equilibrium Green's function formalism is used to study in detail the ballistic conductance of asymmetrically biased side-gated quantum point contacts (QPCs) in the presence of lateral spin-orbit coupling and electron-electron interaction for a wide range of QPC dimensions and gate bias voltage. Various conductance anomalies are predicted below the first quantized conductance plateau (G0=2e2…
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A non-equilibrium Green's function formalism is used to study in detail the ballistic conductance of asymmetrically biased side-gated quantum point contacts (QPCs) in the presence of lateral spin-orbit coupling and electron-electron interaction for a wide range of QPC dimensions and gate bias voltage. Various conductance anomalies are predicted below the first quantized conductance plateau (G0=2e2/h) which occur due to spontaneous spin polarization in the narrowest portion of the QPC. The number of observed conductance anomalies increases with increasing aspect ratio (length/width) of the QPC constriction. These anomalies are fingerprints of spin textures in the narrow portion of the QPC.
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Submitted 30 September, 2010;
originally announced September 2010.
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Experimental observation of nanojets formed by heating the PbO-coated Pb clusters
Authors:
Fengqi Song,
Min Han,
Minda Liu,
Bang Chen,
Jianguo Wan,
Guanghou Wang
Abstract:
In this article, we will present the first experimental observation of nanojets formed by heating PbO-coated Pb clusters, which has been predicted theoretically by M. Moseler and U Landman. During the heating, the hot liquid ejects through the broken orifice into vacuum, and forms a condensed trail in the tadpole shape as shown in the TEM micrographs. The temperature-variable Raman spectra indicat…
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In this article, we will present the first experimental observation of nanojets formed by heating PbO-coated Pb clusters, which has been predicted theoretically by M. Moseler and U Landman. During the heating, the hot liquid ejects through the broken orifice into vacuum, and forms a condensed trail in the tadpole shape as shown in the TEM micrographs. The temperature-variable Raman spectra indicates that the nanojet formation is closely related to the heating temperature and thus essentially to the internal pressure in the coated clusters. The pressure inside the shell, which rises from the inner core's melting and its confined volume expansion and then drops after the final explosion, dominates the whole nanojetting process.
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Submitted 31 August, 2010;
originally announced September 2010.
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Two-step splitting the expandable graphite for few-layer graphene
Authors:
Kaiming Liao,
Wangfeng Ding,
Yuyuan Qin,
Zhaoguo Li,
Taishi Chen,
Jianguo Wan,
Fengqi Song,
Min Han,
Guanghou Wang,
Jianfeng Zhou
Abstract:
Few-layer graphene sheets are prepared by splitting the expanded graphites using a high-power sonication. Atomic-level quantitative scanning transmission electron microscopy (Q-STEM) is employed to carry out the efficient layer statisticsm, enabling global optimization of the experimental conditions. A two-step splitting mechanism is thus revealed, in which the mean layer number was firstly reduce…
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Few-layer graphene sheets are prepared by splitting the expanded graphites using a high-power sonication. Atomic-level quantitative scanning transmission electron microscopy (Q-STEM) is employed to carry out the efficient layer statisticsm, enabling global optimization of the experimental conditions. A two-step splitting mechanism is thus revealed, in which the mean layer number was firstly reduced to less than 20 by heating to 1100°C and then tuned to the few-layer region by a 5-minute 104W/litre sonication. Raman spectroscopic analysis confirms the above mechanism and demonstrates that the sheets are largely free of defects and oxides.
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Submitted 31 August, 2010;
originally announced September 2010.
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Films with the discrete nano-DLC-particles as the field emission cascade
Authors:
Fengqi Song,
Feng Zhou,
Haijun Bu,
Xiaoshu Wang,
Longbing He,
Min Han,
Jianguo Wan,
Jianfeng Zhou,
Guanghou Wang
Abstract:
The films with the discrete diamond-like-carbon nanoparticles were prepared by the deposition of the carbon nanoparticle beam. Their morphologies were imaged by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nanoparticles were found distributed on the silicon (100) substrate discretely. The semisphere shapes of the nanoparticles were demonstrated by the AFM line profile.…
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The films with the discrete diamond-like-carbon nanoparticles were prepared by the deposition of the carbon nanoparticle beam. Their morphologies were imaged by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nanoparticles were found distributed on the silicon (100) substrate discretely. The semisphere shapes of the nanoparticles were demonstrated by the AFM line profile. EELS was measured and the sp3 ratio as high as 86% was found. The field-induced electron emission of the as-prepared cascade (nanoDLC/ Si) was tested and the current density of 1mA/cm2 was achieved at 10.2V/μm.
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Submitted 31 August, 2010;
originally announced September 2010.
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Visualizing topological insulating Bi2Te3 quintuple layers on SiO2-capped Si substrates and its contrast optimization
Authors:
Zhaoguo Li,
Yuyuan Qin,
Yuewen Mu,
Taishi Chen,
Changhui Xu,
Longbing He,
Wangfeng Ding,
Jianguo Wan,
Fengqi Song,
Min Han,
Guanghou Wang
Abstract:
Thin Bi2Te3 flakes, with as few as 3 quintuple layers, are optically visualized on the SiO2-capped Si substrates. Their optical contrasts vary with the illumination wavelength, flake thickness and capping layers. The maximum contrast appears at the optimized light with the 570nm wavelength. The contrast turns reversed when the flake is reduced to less than 20 quintuple layers. A calculation based…
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Thin Bi2Te3 flakes, with as few as 3 quintuple layers, are optically visualized on the SiO2-capped Si substrates. Their optical contrasts vary with the illumination wavelength, flake thickness and capping layers. The maximum contrast appears at the optimized light with the 570nm wavelength. The contrast turns reversed when the flake is reduced to less than 20 quintuple layers. A calculation based on the Fresnel law describes the above observation with the constructions of the layer number-wave length-contrast three-dimensional (3D) diagram and the cap thickness-wavelength-contrast 3D diagram, applicative in the current studies of topological insulating flakes.
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Submitted 14 December, 2010; v1 submitted 31 August, 2010;
originally announced August 2010.
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Enhancement of ferroelectricity in Cr-doped Ho_2Ti_2O_7
Authors:
X. W. Dong,
S. Dong,
K. F. Wang,
J. G. Wan,
J. -M. Liu
Abstract:
A series of polycrystalline pyrochlore rare-earth titanate Ho_{2-x}Cr_xTi_2O_7 are synthesized in order to enhance the ferroelectricity of pyrochlore Ho2Ti2O7. For the sample close to the doping level x=0.4, a giant enhancement of polarization P up to 660\muC/m2 from 0.54\muC/m2 at x=0 is obtained, accompanied with an increment of ferroelectric transition point Tc up to ~140K from ~60K. A magnetic…
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A series of polycrystalline pyrochlore rare-earth titanate Ho_{2-x}Cr_xTi_2O_7 are synthesized in order to enhance the ferroelectricity of pyrochlore Ho2Ti2O7. For the sample close to the doping level x=0.4, a giant enhancement of polarization P up to 660\muC/m2 from 0.54\muC/m2 at x=0 is obtained, accompanied with an increment of ferroelectric transition point Tc up to ~140K from ~60K. A magnetic anomaly at T~140K together with the polarization response to magnetic field, is identified, implying the multiferroic effect in Ho2-xCrxTi2O7.
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Submitted 20 March, 2010;
originally announced March 2010.
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The effective spin concept to analyze coherent charge transport in mesoscopic systems
Authors:
J. Wan,
W. Liu,
M. Cahay,
V. Gasparian,
S. Bandyopadhyay
Abstract:
An effective spin concept is introduced to examine the mathematical and physical analogy between phase coherent charge transport in mesoscopic systems and quantum operations on spin based qubits. When coupled with the Bloch sphere concept, this isomorphism allows formulation of transport problems in a language more familiar to researchers in the field of spintronics and quantum computing. We exe…
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An effective spin concept is introduced to examine the mathematical and physical analogy between phase coherent charge transport in mesoscopic systems and quantum operations on spin based qubits. When coupled with the Bloch sphere concept, this isomorphism allows formulation of transport problems in a language more familiar to researchers in the field of spintronics and quantum computing. We exemplify the synergy between charge tunneling and spin qubit unitary operations by recasting well-known problems of tunneling through a delta scatterer, a resonant tunneling structure, a superlattice structure, and arrays of elastic scatterers, in terms of specific unitary operations (rotations) of a spinor on the Bloch sphere.
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Submitted 15 September, 2009;
originally announced September 2009.
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Possible origin of the 0.5 plateau in the ballistic conductance of quantum point contacts
Authors:
J. Wan,
M. Cahay,
P. Debray,
R. Newrock
Abstract:
A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC between the opposite edges of the channel. In single electron modeling of transport, this triggers a spo…
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A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC between the opposite edges of the channel. In single electron modeling of transport, this triggers a spontaneous but insignificant spin polarization in the QPC. However, the spin polarization of the QPC is enhanced substantially when the effect of electron-electron interaction is included. The spin polarization is strong enough to result in the occurrence of a conductance plateau at 0.5G0 (G0 = 2e2/h) in the absence of any external magnetic field. In our simulations of a model QPC device, the 0.5 plateau is found to be quite robust and survives up to a temperature of 40K. The spontaneous spin polarization and the resulting magnetization of the QPC can be reversed by flipping the polarity of the source to drain bias or the potential difference between the two SGs. These numerical simulations are in good agreement with recent experimental results for side-gated QPCs made from the low band gap semiconductor InAs.
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Submitted 26 August, 2009; v1 submitted 23 March, 2009;
originally announced March 2009.
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All-Electric Quantum Point Contact Spin Valve
Authors:
P. Debray,
J. Wan,
S. M. S. Rahman,
R. S. Newrock,
M. Cahay,
A. T. Ngo,
S. E. Ulloa,
S. T. Herbert,
M. Muhammad,
M. Johnson
Abstract:
This paper has been withdrawn by the author because in the main text some discussion parts were inadvertently added by mistake.
This paper has been withdrawn by the author because in the main text some discussion parts were inadvertently added by mistake.
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Submitted 29 May, 2009; v1 submitted 15 January, 2009;
originally announced January 2009.
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Pressure Correction in Density Functional Theory Calculations
Authors:
S. H. Lee,
Jones T. K. Wan
Abstract:
First-principles calculations based on density functional theory have been widely used in studies of the structural, thermoelastic, rheological, and electronic properties of earth-forming materials. The exchange-correlation term, however, is implemented based on various approximations, and this is believed to be the main reason for discrepancies between experiments and theoretical predictions. I…
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First-principles calculations based on density functional theory have been widely used in studies of the structural, thermoelastic, rheological, and electronic properties of earth-forming materials. The exchange-correlation term, however, is implemented based on various approximations, and this is believed to be the main reason for discrepancies between experiments and theoretical predictions. In this work, by using periclase MgO as a prototype system we examine the discrepancies in pressure and Kohn-Sham energy that are due to the choice of the exchange-correlation functional. For instance, we choose local density approximation and generalized gradient approximation. We perform extensive first-principles calculations at various temperatures and volumes and find that the exchange-correlation-based discrepancies in Kohn-Sham energy and pressure should be independent of temperature. This implies that the physical quantities, such as the equation of states, heat capacity, and the Grüneisen parameter, estimated by a particular choice of exchange-correlation functional can easily be transformed into those estimated by another exchange-correlation functional. Our findings may be helpful in providing useful constraints on mineral properties %at thermodynamic conditions compatible to deep Earth. at deep Earth thermodynamic conditions.
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Submitted 11 November, 2008; v1 submitted 23 October, 2008;
originally announced October 2008.
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A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio
Authors:
J. Wan,
M. Cahay,
S. Bandyopadhyay
Abstract:
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF…
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We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF conductance remains fairly large (~ 60) up to a temperature of 10 K. This device also has excellent inverter characteristics, making it attractive for applications in low power and high density Boolean logic circuits.
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Submitted 9 November, 2007;
originally announced November 2007.
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A Digital Switch and Femto-Tesla Magnetic Field Sensor Based on Fano Resonance in a Spin Field Effect Transistor
Authors:
J. Wan,
M. Cahay,
S. Bandyopadhyay
Abstract:
We show that a Spin Field Effect Transistor, realized with a semiconductor quantum wire channel sandwiched between half-metallic ferromagnetic contacts, can have Fano resonances in the transmission spectrum. These resonances appear because the ferromagnets are half-metallic, so that the Fermi level can be placed above the majority but below the minority spin band. In that case, the majority spin…
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We show that a Spin Field Effect Transistor, realized with a semiconductor quantum wire channel sandwiched between half-metallic ferromagnetic contacts, can have Fano resonances in the transmission spectrum. These resonances appear because the ferromagnets are half-metallic, so that the Fermi level can be placed above the majority but below the minority spin band. In that case, the majority spins will be propagating, but the minority spins will be evanescent. At low temperatures, the Fano resonances can be exploited to implement a digital binary switch that can be turned on or off with a very small gate voltage swing of few tens of microvolts, leading to extremely small dynamic power dissipation during switching. An array of 500,000 x 500,000 such transistors can detect ultrasmall changes in a magnetic field with a sensitivity of 1 femto-Tesla/sqrt{Hz}, if each transistor is biased near a Fano resonance.
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Submitted 9 November, 2007;
originally announced November 2007.
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Can a non-ideal metal ferromagnet inject spin into a semiconductor with 100% efficiency without a tunnel barrier?
Authors:
J. Wan,
M. Cahay,
S. Bandyopadhyay
Abstract:
Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization, or there exists a suitable tunnel barrier at the interface. In this paper, we show that, at absolute zero temperature, 100% spin injection efficiency from a non-ideal metal ferromagnet int…
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Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization, or there exists a suitable tunnel barrier at the interface. In this paper, we show that, at absolute zero temperature, 100% spin injection efficiency from a non-ideal metal ferromagnet into a semiconductor quantum wire can be reached at certain injection energies, without a tunnel barrier, provided there is an axial magnetic field along the direction of current flow as well as a spin orbit interaction in the semiconductor. At these injection energies, spin is injected only from the majority spin band of the ferromagnetic contact, resulting in 100% spin injection efficiency. This happens because of the presence of antiresonances in the transmission coefficient of the minority spins when their incident energies coincide with Zeeman energy states in the quantum wire.
At absolute zero and below a critical value of the axial magnetic field, there are two distinct Zeeman energy states and therefore two injection energies at which ideal spin filtering is possible; above the critical magnetic field there is only one such injection energy. The spin injection efficiency rapidly decreases as the temperature increases. The rate of decrease is slower when the magnetic field is above the critical value. The appropriate choice of semiconductor materials and structures necessary to maintain a large spin injection efficiency at elevated temperatures is discussed.
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Submitted 14 February, 2006;
originally announced February 2006.
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Liquid crystal pretilt control by inhomogeneous surfaces
Authors:
Jones T. K. Wan,
Ophelia K. C. Tsui,
Hoi-Sing Kwok,
Ping Sheng
Abstract:
We consider the pretilt alignment of nematic liquid crystal (LC) on inhomogeneous surface patterns comprising patches of homeotropic or homogeneous alignment domains, with azimuthal anisotropy assumed in the surface plane. We found that the resultant LC pretilt generally increases continuously from the homogeneous limit to the homeotropic limit as the area fraction of the homeotropic region incr…
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We consider the pretilt alignment of nematic liquid crystal (LC) on inhomogeneous surface patterns comprising patches of homeotropic or homogeneous alignment domains, with azimuthal anisotropy assumed in the surface plane. We found that the resultant LC pretilt generally increases continuously from the homogeneous limit to the homeotropic limit as the area fraction of the homeotropic region increases from 0 to 1. The variations are qualitatively different depending on how the distance between patches compares to the extrapolation length of the stronger anchoring domain. Our results agree with those previously found in stripped patterns. The present findings may provide useful guidelines for designing inhomogeneous alignment surfaces for variable LC pretilt control - a subject of much technological interest in recent years.
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Submitted 20 May, 2005;
originally announced May 2005.