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Hexagonal boron nitride crystal growth in the Li3BN2-BN system
Authors:
Camille Maestre,
Philippe Steyer,
Bérangère Toury,
Catherine Journet,
Vincent Garnier
Abstract:
Hexagonal boron nitride (hBN) presents valuable intrinsic properties and attracts considerable attention for the development of novel two-dimensional (2D) materials-based technologies. Even though huge efforts have been made to improve the bottom-up synthesis of integrated and high quality hBN, the devices presenting the best performances are still made using hBN exfoliated from bulk crystals. In…
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Hexagonal boron nitride (hBN) presents valuable intrinsic properties and attracts considerable attention for the development of novel two-dimensional (2D) materials-based technologies. Even though huge efforts have been made to improve the bottom-up synthesis of integrated and high quality hBN, the devices presenting the best performances are still made using hBN exfoliated from bulk crystals. In this context, we explore the Polymer-Derived Ceramics (PDC) route coupled to a high temperature process that produces millimetric and high quality hBN crystals. By investigating the (micro)structure of several samples, we demonstrate that the crystal growth occurs by segregation from a Li3BN2-BN solution upon cooling and from hBN seeds. In particular, we show that crystallization can occur at a temperature as low as 1400{\textdegree}C. Overall, these results show that hBN crystal growth in the Li3BN2-BN system is compatible with conventional flux methods that may be the most promising platform for continuous seeded hBN crystal growth.
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Submitted 15 October, 2024;
originally announced October 2024.
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Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
Authors:
Taoufiq Ouaj,
Christophe Arnold,
Jon Azpeitia,
Sunaja Baltic,
Julien Barjon,
Jose Cascales,
Huanyao Cun,
David Esteban,
Mar Garcia-Hernandez,
Vincent Garnier,
Subodh K. Gautam,
Thomas Greber,
Said Said Hassani,
Adrian Hemmi,
Ignacio Jimenéz,
Catherine Journet,
Paul Kögerler,
Annick Loiseau,
Camille Maestre,
Marvin Metzelaars,
Philipp Schmidt,
Christoph Stampfer,
Ingrid Stenger,
Philippe Steyer,
Takashi Taniguchi
, et al. (3 additional authors not shown)
Abstract:
We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these substrates. Our study includes hBN crystals grown under different conditions and scalable BN films deposited by either chemical or physical vapor deposition (CVD or PVD). We explore the complete process from boron nitri…
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We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these substrates. Our study includes hBN crystals grown under different conditions and scalable BN films deposited by either chemical or physical vapor deposition (CVD or PVD). We explore the complete process from boron nitride growth, over its optical characterization by time-resolved cathodoluminescence (TRCL), to the optical and electronic characterization of graphene by Raman spectroscopy after encapsulation and Hall bar processing. Within our benchmarking protocol we achieve a homogeneous electronic performance within each Hall bar device through a fast and reproducible processing routine. We find that a free exciton lifetime of 1 ns measured on as-grown hBN crystals by TRCL is sufficient to achieve high graphene room temperature charge carrier mobilities of 80,000 cm$^2$/(Vs) at a carrier density of |n| = 10$^{12}$ cm$^{-2}$, while respective exciton lifetimes around 100 ps yield mobilities up to 30,000 cm$^2$/(Vs). For scalable PVD-grown BN films, we measure carrier mobilities exceeding 10,000 cm$^2$/(Vs) which correlates with a graphene Raman 2D peak linewidth of 22 cm$^{-1}$. Our work highlights the importance of the Raman 2D linewidth of graphene as a critical metric that effectively assesses the interface quality (i.e. surface roughness) to the BN substrate, which directly affects the charge carrier mobility of graphene. Graphene 2D linewidth analysis is suitable for all BN substrates and is particularly advantageous when TRCL or BN Raman spectroscopy cannot be applied to specific BN materials such as amorphous or thin films. This underlines the superior role of spatially-resolved spectroscopy in the evaluation of BN crystals and films for the use of high-mobility graphene devices.
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Submitted 5 September, 2024;
originally announced September 2024.
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Exciton self-trapping in twisted hexagonal boron nitride homostructures
Authors:
Sébastien Roux,
Christophe Arnold,
Etienne Carré,
Alexandre Plaud,
Lei Ren,
Frédéric Fossard,
Nicolas Horezan,
Eli Janzen,
James H. Edgar,
Camille Maestre,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
Cédric Robert,
Xavier Marie,
Annick Loiseau,
Julien Barjon
Abstract:
One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the inter…
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One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long-lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a selftrapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes the broad 4-eV optical emission of highly twisted hBN-hBN structures. Exciton self-trapping is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and the small size of their excitons.
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Submitted 27 February, 2025; v1 submitted 15 May, 2024;
originally announced May 2024.
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Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons
Authors:
L. Abou-Hamdan,
A. Schmitt,
R. Bretel,
S. Rossetti,
M. Tharrault,
D. Mele,
A. Pierret,
M. Rosticher,
T. Taniguchi,
K. Watanabe,
C. Maestre,
C. Journet,
B. Toury,
V. Garnier,
P. Steyer,
J. H. Edgar,
E. Janzen,
J-M. Berroir,
G. Fève,
G. Ménard,
B. Plaçais,
C. Voisin,
J-P. Hugonin,
E. Bailly,
B. Vest
, et al. (4 additional authors not shown)
Abstract:
Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations ca…
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Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations called phonon-polaritons, resulting from the coupling of photons with crystal lattice vibrations (optical phonons). In particular, phonon-polaritons arising in the van der Waals crystal hexagonal boron nitride (hBN) exhibit hyperbolic dispersion, which enhances light-matter coupling. For this reason, electroluminescence of hyperbolic phonon-polaritons (HPhPs) has been proposed as an explanation for the peculiar radiative energy transfer within hBN-encapsulated graphene transistors. However, since HPhPs are confined, they are inaccessible in the far-field, so that any hint of electroluminescence is only based on indirect electronic signatures and needs to be confirmed by direct observation. Here, we demonstrate far-field mid-IR (λ = 6.5 μm) electroluminescence of HPhPs excited by strongly biased high-mobility graphene within a van der Waals heterostructure, and we quantify the associated radiative energy transfer through the material. The presence of HPhPs is revealed via far-field mid-IR spectroscopy due to their elastic scattering at discontinuities in the heterostructure. The associated radiative flux is quantified by mid-IR pyrometry of the substrate receiving the energy. This radiative energy transfer is shown to be reduced in hBN with nanoscale inhomogeneities, demonstrating the central role of the electromagnetic environment in this process.
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Submitted 2 December, 2024; v1 submitted 12 October, 2023;
originally announced October 2023.
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Surface recombination and out of plane diffusivity of free excitons in hexagonal boron nitride
Authors:
Sébastien Roux,
Christophe Arnold,
Etienne Carré,
Eli Janzen,
James H. Edgard,
Camille Maestre,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
Annick Loiseau,
Julien Barjon
Abstract:
We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at…
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We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at room and at cryogenic temperatures to four bulk hexagonal boron nitride crystals grown by different synthesis routes. The exciton diffusivity depends on the sample quality but not on the temperature, indicating it is limited by defect scattering even in the best quality crystals. The lower limit for the diffusivity by phonon scattering is 0.2 cm$^{2}$.s$^{-1}$. Diffusion lengths were as much as 570 nm. Finally, the surface recombination velocity exceeds 10$^{5}$ cm$^{2}$.s$^{-1}$, at a level similar to silicon or diamond. This result reveals that surface recombination could strongly limit light-emitting devices based on 2D materials.
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Submitted 11 August, 2023; v1 submitted 10 August, 2023;
originally announced August 2023.
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From the synthesis of hBN crystals to their use as nanosheets for optoelectronic devices
Authors:
Camille Maestre,
Yangdi Li,
Vincent Garnier,
Philippe Steyer,
Sébastien Roux,
Alexandre Plaud,
Annick Loiseau,
Julien Barjon,
Lei Ren,
Cédric Robert,
Bo Han,
Xavier Marie,
Catherine Journet,
Bérangère Toury
Abstract:
In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices.…
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In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices. Millimeters scale hexagonal boron nitride crystals are obtained through a disruptive dual method (PDC/PCS) consisting in a complementary coupling of the Polymer Derived Ceramics route and a Pressure-Controlled Sintering process. In addition to their excellent chemical and crystalline quality, these crystals exhibit a free exciton lifetime of 0.43 ns, as determined by time-resolved cathodoluminescence measurements, confirming their interesting optical properties. To go further in applicative fields, hBN crystals are then exfoliated, and resulting Boron Nitride NanoSheets (BNNSs) are used to encapsulate transition metal dichalcogenides (TMDs). Such van der Waals heterostructures are tested by optical spectroscopy. BNNSs do not luminesce in the emission spectral range of TMDs and the photoluminescence width of the exciton at 4K is in the range 2-3 meV. All these results demonstrate that these BNNSs are relevant for future opto-electronic applications.
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Submitted 19 January, 2022;
originally announced January 2022.
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Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride
Authors:
A. Pierret,
D. Mele,
H. Graef,
J. Palomo,
T. Taniguchi,
K. Watanabe,
Y. Li,
B. Toury,
C. Journet,
P. Steyer,
V. Garnier,
A. Loiseau,
J-M. Berroir,
E. Bocquillon,
G. Fève,
C. Voisin,
E. Baudin,
M. Rosticher,
B. Plaçais
Abstract:
In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm…
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In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant $ε_\parallel=3.4\pm0.2$ consistent with the theoretical prediction of Ohba et al., that narrows down the generally accepted window $ε_\parallel=3$--$4$. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant $ε_\parallel\simeq3.1$ and a trap energy $Φ_B\simeq1.3\;\mathrm{eV}$, that is comparable with standard technologically relevant dielectrics.
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Submitted 28 January, 2022; v1 submitted 15 January, 2022;
originally announced January 2022.
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Radiative lifetime of free excitons in hexagonal boron nitride
Authors:
Sébastien Roux,
Christophe Arnold,
Fulvio Paleari,
Lorenzo Sponza,
Eli Janzen,
James H. Edgar,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
François Ducastelle,
Annick Loiseau,
Julien Barjon
Abstract:
Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect…
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Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood.
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Submitted 2 July, 2021;
originally announced July 2021.
