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Condensed Matter > Materials Science

arXiv:2107.00989 (cond-mat)
[Submitted on 2 Jul 2021]

Title:Radiative lifetime of free excitons in hexagonal boron nitride

Authors:Sébastien Roux (1 and 2), Christophe Arnold (1), Fulvio Paleari (3), Lorenzo Sponza (2), Eli Janzen (4), James H. Edgar (4), Bérangère Toury (5), Catherine Journet (5), Vincent Garnier (6), Philippe Steyer (6), Takashi Taniguchi (7), Kenji Watanabe (8), François Ducastelle (2), Annick Loiseau (2), Julien Barjon (1) ((1) Université Paris-Saclay, UVSQ, CNRS, GEMaC, 78000, Versailles, France, (2) Laboratoire d'Etude des Microstructures, ONERA-CNRS, Université Paris-Saclay, BP 72, 92322 Châtillon Cedex, France, (3) CNR-ISM, Division of Ultrafast Processes in Materials (FLASHit), Area della Ricerca di Roma 1, Via Salaria Km 29.3, I-00016 Monterotondo, Scalo, Italy, (4) Tim Taylor Department of Chemical Engineering, Kansas State University Manhattan, KS 66506, USA, (5) Laboratoire des Multimatériaux et Interfaces, UMR CNRS 5615, Univ Lyon, Université Claude Bernard Lyon 1, F-69622 Villeurbanne, France, (6) Laboratoire MATEIS, UMR CNRS 5510, Univ Lyon, INSA Lyon, F-69621 Villeurbanne, France, (7) International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, (8) Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan)
View a PDF of the paper titled Radiative lifetime of free excitons in hexagonal boron nitride, by S\'ebastien Roux (1 and 2) and 58 other authors
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Abstract:Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2107.00989 [cond-mat.mtrl-sci]
  (or arXiv:2107.00989v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2107.00989
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1103/PhysRevB.104.L161203
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Submission history

From: Sebastien Roux [view email]
[v1] Fri, 2 Jul 2021 11:59:21 UTC (558 KB)
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