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Three-dimensional deformations in single-layer $α$ antimonene and interaction with a Au(111) surface from first principles
Authors:
José de Jesús Villalobos Castro,
Thomas Pierron,
Stephane Pons,
Johann Coraux,
Lorenzo Sponza,
Sergio Vlaic
Abstract:
Using density functional theory, we investigate the electronic structure of the alpha phase of an antimony monolayer in its isolated form and in contact to the (111) surface of gold. We demonstrate that the isolated single-layer actually displays a slightly modulated puckering that stabilizes the monolayer, not a uniform one as often assumed. Moreover, it has dramatic consequences on the electroni…
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Using density functional theory, we investigate the electronic structure of the alpha phase of an antimony monolayer in its isolated form and in contact to the (111) surface of gold. We demonstrate that the isolated single-layer actually displays a slightly modulated puckering that stabilizes the monolayer, not a uniform one as often assumed. Moreover, it has dramatic consequences on the electronic band structure: the material is a semiconductor with low-dispersing bands near the Brillouin zone center. By further application of about 12% strain on the armchair direction, a double-cone features develops wherein an electronic bandgap of about 21~meV is found. When in contact with a Au(111) surface, a strong interaction with gold arises, as it appears clearly from (i) substantial atomic displacements compared to the isolated form, and (ii) hybridization of Sb and Au orbitals. The latter profoundly modifies the electronic band structure by strengthening the spin-orbit splitting of hybridized bands and spoiling the double-cone feature whose manipulation through substrate-induced strain appears therefore questionable, at least in the simulated epitaxial implementation.
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Submitted 17 January, 2025;
originally announced January 2025.
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Emergence of flat bands in the quasicrystal limit of boron nitride twisted bilayers
Authors:
Lorenzo Sponza,
Van Binh Vu,
Elisa Serrano Richaud,
Hakim Amara,
Sylvain Latil
Abstract:
We investigate the electronic structure and the optical absorption onset of close-to-30\degree twisted hexagonal boron nitride bilayers. Our study is carried out with a purposely developed tight-binding model validated against DFT simulations. We demonstrate that approaching 30\degree (quasicrystal limit), all bilayers sharing the same moiré supercell develop identical band structures, irrespectiv…
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We investigate the electronic structure and the optical absorption onset of close-to-30\degree twisted hexagonal boron nitride bilayers. Our study is carried out with a purposely developed tight-binding model validated against DFT simulations. We demonstrate that approaching 30\degree (quasicrystal limit), all bilayers sharing the same moiré supercell develop identical band structures, irrespective of their stacking sequence. This band structure features a bundle of flat bands laying slightly above the bottom conduction state which is responsible for an intense peak at the onset of the absorption spectrum. These results suggest the presence of strong, stable and stacking-independent excitons in boron nitride 30\degree-twisted bilayers. By carefully analyzing the electronic structure and its spatial distribution, we elucidate the origin of these states as moiré-induced K-valley scattering due to interlayer B$-$B coupling. We take advantage of the the physical transparency of the tight-binding parameters to derive a simple triangular model based on the B sublattice that accurately describes the emergence of the bundle. Being our conclusions very general, we predict that a similar bundle should emerge in other close-to-30{\degree} bilayers, like transition metal dichalcogenides, shedding new light on the unique potential of 2D materials.
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Submitted 26 February, 2024; v1 submitted 4 October, 2023;
originally announced October 2023.
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Distinguishing different stackings in layered materials via luminescence spectroscopy
Authors:
Matteo Zanfrognini,
Alexandre Plaud,
Ingrid Stenger,
Frédéric Fossard,
Lorenzo Sponza,
Léonard Schué,
Fulvio Paleari,
Elisa Molinari,
Daniele Varsano,
Ludger Wirtz,
François Ducastelle,
Annick Loiseau,
Julien Barjon
Abstract:
Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characterist…
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Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from ``indirect'', finite-momentum, excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed.
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Submitted 27 May, 2023;
originally announced May 2023.
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Gap engineering and wave function symmetry in C and BN armchair nanoribbons
Authors:
Elisa Serrano Richaud,
Sylvain Latil,
Hakim Amara,
Lorenzo Sponza
Abstract:
Many are the ways of engineering the band gap of nanoribbons including application of stress, electric field and functionalization of the edges. In this article, we investigate separately the effects of these methods on armchair graphene and boron nitride nanoribbons. By means of density functional theory calculations, we show that, despite their similar structure, the two materials respond in opp…
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Many are the ways of engineering the band gap of nanoribbons including application of stress, electric field and functionalization of the edges. In this article, we investigate separately the effects of these methods on armchair graphene and boron nitride nanoribbons. By means of density functional theory calculations, we show that, despite their similar structure, the two materials respond in opposite ways to these stimuli. By treating them as perturbations of a heteroatomic ladder model based on the tight-binding formalism, we connect the two behaviours to the different symmetries of the top valence and bottom conduction wave functions. These results indicate that opposite and complementary strategies are preferable to engineer the gapwidth of armchair graphene and boron nitride nanoribbons.
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Submitted 13 March, 2024; v1 submitted 28 February, 2023;
originally announced February 2023.
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Quantum well confinement and competitive radiative pathways in the luminescence of black phosphorus layers
Authors:
Etienne Carré,
Lorenzo Sponza,
Alain Lusson,
Ingrid Stenger,
Sébastien Roux,
Victor Zatko,
Bruno Dlubak,
Pierre Seneor,
Etienne Gaufrès,
Annick Loiseau,
Julien Barjon
Abstract:
Black phosphorus (BP) stands out from other 2D materials by the wide amplitude of the band-gap energy (Delta(Eg)) that sweeps an optical window from Visible (VIS) to Infrared (IR) wavelengths, depending on the layer thickness. This singularity made the optical and excitonic properties of BP difficult to map. Specifically, the literature lacks in presenting experimental and theoretical data on the…
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Black phosphorus (BP) stands out from other 2D materials by the wide amplitude of the band-gap energy (Delta(Eg)) that sweeps an optical window from Visible (VIS) to Infrared (IR) wavelengths, depending on the layer thickness. This singularity made the optical and excitonic properties of BP difficult to map. Specifically, the literature lacks in presenting experimental and theoretical data on the optical properties of BP on an extended thickness range. Here we report the study of an ensemble of photoluminescence spectra from 79 passivated BP flakes recorded at 4 K with thicknesses ranging from 4 nm to 700 nm, obtained by mechanical exfoliation. We observe that the exfoliation steps induce additional defects states that compete the radiative recombination from bound excitons observed in the crystal. We also show that the evolution of the photoluminescence energy versus thickness follows a quantum well confinement model appreciable from a thickness predicted and probed at 25 nm. The BP slabs placed in different 2D heterostructures show that the emission energy is not significantly modulated by the dielectric environment. Introduction Confinement effects
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Submitted 2 December, 2022;
originally announced December 2022.
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Structural classification of boron nitride twisted bilayers and ab initio investigation of their stacking-dependent electronic structure
Authors:
Sylvain Latil,
Hakim Amara,
Lorenzo Sponza
Abstract:
Since the discovery of superconductive twisted bilayer graphene which initiated the field of twistronics, moiré systems have not ceased to exhibit fascinating properties. We demonstrate that in boron nitride twisted bilayers, for a given moiré periodicity, there are five different stackings which preserve the monolayer hexagonal symmetry (i.e. the invariance upon rotations of 120$^\circ$) and not…
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Since the discovery of superconductive twisted bilayer graphene which initiated the field of twistronics, moiré systems have not ceased to exhibit fascinating properties. We demonstrate that in boron nitride twisted bilayers, for a given moiré periodicity, there are five different stackings which preserve the monolayer hexagonal symmetry (i.e. the invariance upon rotations of 120$^\circ$) and not only two as always discussed in literature. We introduce some definitions and a nomenclature that identify unambiguously the twist angle and the stacking sequence of any hexagonal bilayer with order-3 rotation symmetry. Moreover, we employ density functional theory to study the evolution of the band structure as a function of the twist angle for each of the five stacking sequences of boron nitride bilayers. We show that the gap is indirect at any angle and in any stacking, and identify features that are conserved within the same stacking sequence irrespective of the angle of twist.
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Submitted 17 November, 2022; v1 submitted 12 June, 2022;
originally announced June 2022.
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Radiative lifetime of free excitons in hexagonal boron nitride
Authors:
Sébastien Roux,
Christophe Arnold,
Fulvio Paleari,
Lorenzo Sponza,
Eli Janzen,
James H. Edgar,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
François Ducastelle,
Annick Loiseau,
Julien Barjon
Abstract:
Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect…
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Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood.
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Submitted 2 July, 2021;
originally announced July 2021.
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Proper ab-initio dielectric function of 2D materials and their polarizable thickness
Authors:
Lorenzo Sponza,
François Ducastelle
Abstract:
In this paper we derive a formalism allowing us to separate inter-layer contributions to the polarizability of a periodic array of 2D materials from intra-layer ones. To this aim, effective profile functions are introduced. They constitute a tight-binding-like layer-localized basis involving two lengths, the effective thickness $d$ characteristic of the 2D material and the inter-layer separation…
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In this paper we derive a formalism allowing us to separate inter-layer contributions to the polarizability of a periodic array of 2D materials from intra-layer ones. To this aim, effective profile functions are introduced. They constitute a tight-binding-like layer-localized basis involving two lengths, the effective thickness $d$ characteristic of the 2D material and the inter-layer separation $L$. The method permits, within the same formalism, either to compute the single-layer dielectric function from an ab-initio periodic calculation (top-down strategy) or to stack several 2D materials to generate a finite-thickness van der Waals heterostructure (bottom-up strategy).
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Submitted 15 December, 2020; v1 submitted 16 November, 2020;
originally announced November 2020.
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Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature
Authors:
Etienne Carré,
Lorenzo Sponza,
Alain Lusson,
Ingrid Stenger,
Etienne Gaufrès,
Annick Loiseau,
Julien Barjon
Abstract:
Atomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one…
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Atomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one at 0.278 eV. The free-exciton binding energy is calculated with an anisotropic Wannier-Mott model and found equal to 9.1 meV. On the contrary, the PL intensity quenching of the 0.276 eV peak at high temperature is found with a much smaller activation energy, attributed to the localization of free excitons on a shallow impurity. This analysis leads us to attribute respectively the 0.276 eV and 0.278 eV PL lines to bound excitons and free excitons in BP. As a result, the value of bulk BP bandgap is refined to 0.287 eV at 2K.
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Submitted 29 October, 2020;
originally announced October 2020.
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The impact of stress on the electronic structure of phosphorus allotropes stacked on hexagonal boron nitride
Authors:
Baptiste Bienvenu,
Hakim Amara,
François Ducastelle,
Lorenzo Sponza
Abstract:
We study the mechanical and electronic properties of heterobilayers composed of black phosphorus (BP) on hexagonal boron nitride (hBN) and of blue phosphorus (\Pblue) on hBN by means of ab-intio density functional theory. Emphasis is put on how the stress applied on the constituent layers impact their structural and electronic properties. For this purpose, we adopt a specific scheme of structural…
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We study the mechanical and electronic properties of heterobilayers composed of black phosphorus (BP) on hexagonal boron nitride (hBN) and of blue phosphorus (\Pblue) on hBN by means of ab-intio density functional theory. Emphasis is put on how the stress applied on the constituent layers impact their structural and electronic properties. For this purpose, we adopt a specific scheme of structural relaxation which allows us to distinguish between the energy cost of distorting each layer and the gain in stacking them together. In most cases we find that the BP tends to contract along the softer armchair direction, as already reported for similar structures. This contraction can attain up to 5\% of strain, which might deteriorate its very good transport properties along the armchair direction. To prevent this, we propose a twisted-bilayer configuration where the largest part of the stress applies on the zigzag axis, resulting in a lower impact on the transport properties of BP. We also investigated a \Pblue/hBN bilayer. A peculiar hybridization between the valence states of the two layers lets us suggest that electron-hole pairs excited in the bilayer will exhibit a mixed character, with electrons localized solely in the \Pblue{ }layer, and holes spread onto the two layers.
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Submitted 6 July, 2020; v1 submitted 7 April, 2020;
originally announced April 2020.
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Evening out the spin and charge parity to increase T$_c$ in unconventional superconductor Sr_{2}RuO_{4}
Authors:
Swagata Acharya,
Dimitar Pashov,
Cédric Weber,
Hyowon Park,
Lorenzo Sponza,
Mark van Schilfgaarde
Abstract:
Unconventional superconductivity in Sr$_{2}$RuO$_{4}$ has been intensively studied for decades. The origin and nature of the pairing continues to be widely debated, in particular, the possibility of a triplet origin of Cooper pairs. However, complexity of Sr$_{2}$RuO$_{4}$ with multiple low-energy scales, involving subtle interplay among spin, charge and orbital degrees of freedom, calls for advan…
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Unconventional superconductivity in Sr$_{2}$RuO$_{4}$ has been intensively studied for decades. The origin and nature of the pairing continues to be widely debated, in particular, the possibility of a triplet origin of Cooper pairs. However, complexity of Sr$_{2}$RuO$_{4}$ with multiple low-energy scales, involving subtle interplay among spin, charge and orbital degrees of freedom, calls for advanced theoretical approaches which treat on equal footing all electronic effects. Here we develop a novel approach, a detailed \emph{ab initio} theory, coupling quasiparticle self-consistent \emph{GW} approximation with dynamical mean field theory (DMFT), including both local and non-local correlations. We report that the superconducting instability has multiple triplet and singlet components. In the unstrained case the triplet eigenvalues are larger than the singlets. Under uniaxial strain, the triplet eigenvalues drop rapidly and the singlet components increase. This is concomitant with our observation of spin and charge fluctuations shifting closer to wave-vectors favoring singlet pairing in the Brillouin zone. We identify a complex mechanism where charge fluctuations and spin fluctuations co-operate in the even-parity channel under strain leading to increment in $T_c$, thus proposing a novel mechanism for pushing the frontier of $T_c$ in unconventional `triplet' superconductors.
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Submitted 6 September, 2019; v1 submitted 13 November, 2018;
originally announced November 2018.
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Mapping of the energetically lowest exciton in bulk $1T$-HfS$_2$
Authors:
Carsten Habenicht,
Lorenzo Sponza,
Roman Schuster,
Martin Knupfer,
Bernd Büchner
Abstract:
By combining electron energy-loss spectroscopy and state-of-the-art computational methods, we were able to provide an extensive picture of the excitonic processes in $1T$-HfS$_2$. The results differ significantly from the properties of the more scrutinized group VI semiconducting transition metal dichalcogenides such as MoS$_2$ and WSe$_2$. The measurements revealed a parabolic exciton dispersion…
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By combining electron energy-loss spectroscopy and state-of-the-art computational methods, we were able to provide an extensive picture of the excitonic processes in $1T$-HfS$_2$. The results differ significantly from the properties of the more scrutinized group VI semiconducting transition metal dichalcogenides such as MoS$_2$ and WSe$_2$. The measurements revealed a parabolic exciton dispersion for finite momentum $\textbf{q}$ parallel to the $Γ$K direction which allowed the determination of the effective exciton mass. The dispersion decreases monotonically for momentum exchanges parallel to the $Γ$M high symmetry line. To gain further insight into the excitation mechanisms, we solved the ab-initio Bethe-Salpeter equation for the system. The results matched the experimental loss spectra closely, thereby confirming the excitonic nature of the observed transitions, and produced the momentumdependent binding energies. The simulations also demonstrated that the excitonic transitions for $\textbf{q}$ || $Γ$M occur exactly along that particular high symmetry line. For $\textbf{q}$ || $Γ$K on the other hand, the excitations traverse the Brillouin zone crossing various high symmetry lines. A particular interesting aspect of our findings was that the calculation of the electron probability density revealed that the exciton assumes a six-pointed star-like shape along the real space crystal planes indicating a mixed Frenkel-Wannier character.
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Submitted 11 October, 2018; v1 submitted 5 August, 2018;
originally announced August 2018.
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Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation
Authors:
Lorenzo Sponza,
Hakim Amara,
Claudio Attaccalite,
Sylvain Latil,
Thomas Galvani,
Fulvio Paleari,
Ludger Wirtz,
François Ducastelle
Abstract:
We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are…
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We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are carried out on the level of \textit{ab initio} many-body perturbation theory (GW and Bethe Salpeter equation) and by means of an appropriate tight-binding model. We confirm the change from direct to indirect electronic gap when going from single layer to bulk systems and we give a detailed account of its origin by comparing the effect of different stacking sequences. We emphasize that the inclusion of the electron-hole interaction is crucial for the correct description of the momentum-dependent dispersion of the excitations. It flattens the exciton dispersion with respect to the one obtained from the dispersion of excitations in the independent-particle picture. In the AB stacking this effect is particularly important as the lowest-lying exciton is predicted to be direct despite the indirect electronic band gap.
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Submitted 4 July, 2018; v1 submitted 16 June, 2018;
originally announced June 2018.
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Bright luminescence from indirect and strongly bound excitons in hBN
Authors:
Leonard Schue,
Lorenzo Sponza,
Alexandre Plaud,
Hakima Bensalah,
Kenji Watanabe,
Takashi Taniguchi,
François Ducastelle,
Annick Loiseau,
Julien Barjon
Abstract:
A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (hBN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals. A high quantum yield value of ~50% is found for hBN at 10 K comparable to that of direct bandgap semiconductors. This bright luminescence at 215 nm remains stable up to room tempera…
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A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (hBN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals. A high quantum yield value of ~50% is found for hBN at 10 K comparable to that of direct bandgap semiconductors. This bright luminescence at 215 nm remains stable up to room temperature, evidencing the strongly bound character of excitons in bulk hBN. Ab initio calculations of the exciton dispersion confirm the indirect nature of the lowest-energy exciton whose binding energy is found equal to 300 meV, in agreement with the thermal stability observed in luminescence. The direct exciton is found at a higher energy but very close to the indirect one, which solves the long debated Stokes shift in bulk hBN.
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Submitted 8 February, 2019; v1 submitted 10 March, 2018;
originally announced March 2018.
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Exciton interference in hexagonal boron nitride
Authors:
Lorenzo Sponza,
Hakim Amara,
Claudio Attaccalite,
François Ducastelle,
Annick Loiseau
Abstract:
In this letter we report a thorough analysis of the exciton dispersion in bulk hexagonal boron nitride. We solve the ab initio GW Bethe-Salpeter equation at finite $\mathbf{q}\parallel ΓK$, and we compare our results with recent high-accuracy electron energy loss data. Simulations reproduce the measured dispersion and the variation of the peak intensity. We focus on the evolution of the intensity,…
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In this letter we report a thorough analysis of the exciton dispersion in bulk hexagonal boron nitride. We solve the ab initio GW Bethe-Salpeter equation at finite $\mathbf{q}\parallel ΓK$, and we compare our results with recent high-accuracy electron energy loss data. Simulations reproduce the measured dispersion and the variation of the peak intensity. We focus on the evolution of the intensity, and we demonstrate that the excitonic peak is formed by the superposition of two groups of transitions that we call $KM$ and $MK'$ from the k-points involved in the transitions. These two groups contribute to the peak intensity with opposite signs, each damping the contributions of the other. The variations in number and amplitude of these transitions determine the changes in intensity of the peak. Our results contribute to the understanding of electronic excitations in this systems along the $ΓK$ direction, which is the relevant direction for spectroscopic measurements. They also unveil the non-trivial relation between valley physics and excitonic dispersion in h--BN, opening the possibility to tune excitonic effects by playing with the interference between transitions. Furthermore, this study introduces analysis tools and a methodology that are completely general. They suggest a way to regroup independent-particle transitions which could permit a deeper understanding of excitonic properties in any system.
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Submitted 24 November, 2017; v1 submitted 21 September, 2017;
originally announced September 2017.
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Angular resolved electron energy loss spectroscopy in hexagonal boron nitride
Authors:
Frédéric Fossard,
Lorenzo Sponza,
Léonard Schué,
Claudio Attaccalite,
François Ducastelle,
Julien Barjon,
Annick Loiseau
Abstract:
Electron energy loss spectra have been measured on hexagonal boron nitride single crystals employing a novel electron energy loss spectroscopic set-up composed by an electron microscope equipped with a monochromator and an in-column filter. This set-up provides high-quality energy-loss spectra and allows also for the imaging of energy-filtered diffraction patterns. These two acquisition modes prov…
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Electron energy loss spectra have been measured on hexagonal boron nitride single crystals employing a novel electron energy loss spectroscopic set-up composed by an electron microscope equipped with a monochromator and an in-column filter. This set-up provides high-quality energy-loss spectra and allows also for the imaging of energy-filtered diffraction patterns. These two acquisition modes provide complementary pieces of information, offering a global view of excitations in reciprocal space. As an example of the capabilities of the method we show how easily the core loss spectra at the $K$ edges of boron and nitrogen can be measured and imaged. Low losses associated to interband and/or plasmon excitations are also measured. This energy range allows us to illustrate that our method provides results of quality comparable to those obtained from non resonant X-ray inelastic scattering, but with advantageous specificities such as an enhanced sensitivity at low q and a much higher simplicity and versatility that makes it well adapted to the study of two-dimensional materials and related heterostructures. Finally, by comparing theoretical calculations against our measures, we are able to relate the range of applicability of ab initio calculations to the anisotropy of the sample and assess the level of approximation required for a proper simulation of our acquisition method.
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Submitted 6 September, 2017; v1 submitted 18 January, 2017;
originally announced January 2017.
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Self-energies in itinerant magnets: A focus on Fe and Ni
Authors:
L. Sponza,
P. Pisanti,
A. Vishina,
S. Acharya,
D. Pashov,
J. Vidal,
C. Weber,
G. Kotliar,
M. van Schilfgaarde
Abstract:
We present a detailed study of local and non-local correlations in the electronic structure of elemental transition metals carried out by means of the Quasiparticle Self-consistent GW (QSGW ) and Dynamical Mean Field Theory (DMFT). Recent high resolution ARPES and Haas-van Alphen data of two typical transition metal systems (Fe and Ni) are used as case study. (i) We find that the properties of Fe…
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We present a detailed study of local and non-local correlations in the electronic structure of elemental transition metals carried out by means of the Quasiparticle Self-consistent GW (QSGW ) and Dynamical Mean Field Theory (DMFT). Recent high resolution ARPES and Haas-van Alphen data of two typical transition metal systems (Fe and Ni) are used as case study. (i) We find that the properties of Fe are very well described by QSGW. Agreement with cyclotron and very clean ARPES measurements is excellent, provided that final-state scattering is taken into account. This establishes the exceptional reliability of QSGW also in metallic systems. (ii) Nonetheless QSGW alone is not able to provide an adequate description of the Ni ARPES data due to strong local spin fluctuations. We surmount this deficiency by combining nonlocal charge fluctuations in QSGW with local spin fluctuations in DMFT (QSGW + 'Magnetic DMFT'). (iii) Finally we show that the dynamics of the local fluctuations are actually not crucial. The addition of an external static field can lead to similarly good results if non-local correlations are included through QSGW.
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Submitted 15 December, 2016; v1 submitted 17 March, 2016;
originally announced March 2016.
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Confinement effects in ultra-thin ZnO polymorph films: electronic and optical properties
Authors:
Lorenzo Sponza,
Jacek Goniakowski,
Claudine Noguera
Abstract:
Relying on generalized-gradient and hybrid first-principles simulations, this work provides a complete characterization of the electronic properties of ZnO ultra-thin films, cut along the Body-Centered-Tetragonal(010), Cubane(100), h-BN(0001), Zinc-Blende(110), Wurtzite(10$\bar{1}$0) and (0001) orientations. The characteristics of the local densities of states are analyzed in terms of the reductio…
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Relying on generalized-gradient and hybrid first-principles simulations, this work provides a complete characterization of the electronic properties of ZnO ultra-thin films, cut along the Body-Centered-Tetragonal(010), Cubane(100), h-BN(0001), Zinc-Blende(110), Wurtzite(10$\bar{1}$0) and (0001) orientations. The characteristics of the local densities of states are analyzed in terms of the reduction of the Madelung potential on under-coordinated atoms and surface states/resonances appearing at the top of the VB and bottom of the CB. The gap width in the films is found to be larger than in the corresponding bulks, which is assigned to quantum confinement effects. The components of the high frequency dielectric constant are determined and the absorption spectra of the films are computed. They display specific features just above the absorption threshold due to transitions from or to the surface resonances. This study provides a first understanding of finite size effects on the electronic properties of ZnO thin films and a benchmark which is expected to foster experimental characterization of ultra-thin films via spectroscopic techniques.
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Submitted 14 March, 2016;
originally announced March 2016.
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Exciton band structure in two-dimensional materials
Authors:
Pierluigi Cudazzo,
Lorenzo Sponza,
Christine Giorgetti,
Lucia Reining,
Francesco Sottile,
Matteo Gatti
Abstract:
Low-dimensional materials differ from their bulk counterpart in many respects. In particular, the screening of the Coulomb interaction is strongly reduced, which can have important consequences such as the significant increase of exciton binding energies. In bulk materials the binding energy is used as an indicator in optical spectra to distinguish different kinds of excitons, but this is not poss…
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Low-dimensional materials differ from their bulk counterpart in many respects. In particular, the screening of the Coulomb interaction is strongly reduced, which can have important consequences such as the significant increase of exciton binding energies. In bulk materials the binding energy is used as an indicator in optical spectra to distinguish different kinds of excitons, but this is not possible in low-dimensional materials, where the binding energy is large and comparable in size for excitons of very different localization. Here we demonstrate that the exciton band structure, which can be accessed experimentally, instead provides a powerful way to identify the exciton character. By comparing the ab initio solution of the many-body Bethe-Salpeter equation for graphane and single-layer hexagonal BN, we draw a general picture of the exciton dispersion in two-dimensional materials, highlighting the different role played by the exchange electron-hole interaction and by the electronic band structure. Our interpretation is substantiated by a prediction for phosphorene.
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Submitted 31 December, 2015;
originally announced December 2015.
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Anomalous excitons and screenings unveiling strong electronic correlations in SrTi$_{1-x}$Nb$_x$O$_3$, 0$\leq$x$\leq$0.005
Authors:
Pranjal Kumar Gogoi,
Lorenzo Sponza,
Daniel Schmidt,
Teguh Citra Asmara,
Caozheng Diao,
Jason C. W. Lim,
Sock Mui Poh,
Shin-ichi Kimura,
Paolo E. Trevisanutto,
Valerio Olevano,
Andrivo Rusydi
Abstract:
Electron-electron (e-e) and electron-hole (e-h) interactions are often associated with many exotic phenomena in correlated electron systems. Here, we report an observation of anomalous excitons at 3.75 , 4.67 and 6.11 eV at 4.2 K in bulk-SrTiO$_3$. Fully supported by ab initio GW Bethe-Salpeter equation calculations, these excitons are due to surprisingly strong e-h and e-e interactions with diffe…
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Electron-electron (e-e) and electron-hole (e-h) interactions are often associated with many exotic phenomena in correlated electron systems. Here, we report an observation of anomalous excitons at 3.75 , 4.67 and 6.11 eV at 4.2 K in bulk-SrTiO$_3$. Fully supported by ab initio GW Bethe-Salpeter equation calculations, these excitons are due to surprisingly strong e-h and e-e interactions with different characters: 4.67 and 6.11 eV are resonant excitons and 3.75 eV is a bound Wannier-like exciton with an unexpectedly higher level of delocalization. Measurements and calculations on SrTi$_{1-x}$Nb$_x$O$_3$ for 0.0001$\leq$x$\leq$0.005 further show that energy and spectral-weight of the excitonic peaks vary as a function of electron doping (x) and temperature, which are attributed to screening effects. Our results show the importance of e-h and e-e interactions yielding to anomalous excitons and thus bring out a new fundamental perspective in SrTiO$_3$.
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Submitted 17 June, 2015;
originally announced June 2015.
