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Signatures of hydrodynamic flow of topological carriers in SnTe multi-terminal nanowires
Authors:
Dawid Śnieżek,
Cezary Śliwa,
Krzysztof Dybko,
Jarosław Wróbel,
Piotr Dziawa,
Tomasz Wojtowicz,
Tomasz Story,
Jerzy Wróbel
Abstract:
In this work, we used 20 nm thick CdTe/SnTe/CdTe [001] quantum wells to make 6- and 8-terminal nano-structures with the etched cross-junctions of sub-micron width with walls directed along the [10], [01], and [11] surface crystallographic directions. We studied the low-temperature quantum magneto-transport to investigate the impact of lateral confinement on the states of topological carriers. Calc…
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In this work, we used 20 nm thick CdTe/SnTe/CdTe [001] quantum wells to make 6- and 8-terminal nano-structures with the etched cross-junctions of sub-micron width with walls directed along the [10], [01], and [11] surface crystallographic directions. We studied the low-temperature quantum magneto-transport to investigate the impact of lateral confinement on the states of topological carriers. Calculations showed that for narrow SnTe channels, almost flat bands with small energy dispersion are formed, and in the case of the [11] direction, the dispersionless states are strongly localized at the mesa edges. The measurements indicated that a current path associated with trivial states inside the quantum well was considerably narrowed due to disorder, leading to a significant reduction in channel conductivity. Such a high-resistance cross-junction has been used for measurements of non-linear transport in non-local configurations. The dependence of the differential resistance $R_\text{d}$ on the direct current $I_\text{DC}$ flowing through a selected pair of contacts was studied. For temperatures $T<1$ K, first an increase and then a decrease followed by a minimum of $R_\text{d}$ were observed. This is a characteristic $R_\text{d}(I_\text{DC})$ relationship that is often considered as the signature of the hydrodynamic flow of a fermionic liquid in narrow quantum channels, which in the case of SnTe can be formed by topological states located entirely at the inner edges of a planar cross-junction.
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Submitted 10 March, 2025;
originally announced March 2025.
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Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
Authors:
D. Sztenkiel,
K. Gas,
N. Gonzalez Szwacki,
M. Foltyn,
C. Sliwa,
T. Wojciechowski,
J. Z. Domagala,
D. Hommel,
M. Sawicki,
T. Dietl
Abstract:
We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we…
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We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we demonstrate that the magnetoelectric response results from the inverse piezoelectric effect that changes the trigonal single-ion magnetocrystalline anisotropy. Second, in the metastable regime of ferromagnetic hystereses, the magnetoelectric effect becomes non-linear and irreversible in response to a time-dependent electric field, which can reorient the magnetization direction. Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{1-x}$Te$_3$, in which magnetization was monitored as a function of the gate electric field. Those results constitute experimental support for theories describing the effects of time-dependent perturbation upon glasses far from thermal equilibrium in terms of an enhanced effective temperature.
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Submitted 24 January, 2025; v1 submitted 19 June, 2024;
originally announced June 2024.
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Tight-binding theory of spin-spin interactions, Curie temperatures, and quantum Hall effects in topological (Hg,Cr)Te in comparison to non-topological (Zn,Cr)Te, and (Ga,Mn)N
Authors:
Cezary Śliwa,
Tomasz Dietl
Abstract:
Earlier theoretical results on $p$-$d$ and $d$-$d$ exchange interactions for zinc-blende semiconductors with $\mathrm{Cr}^{2{+}}$ and $\mathrm{Mn}^{3{+}}$ ions are revisited and extended by including contributions beyond the dominating ferromagnetic (FM) superexchange term [i.e., the interband Bloembergen-Rowland-Van Vleck contribution and antiferromagnetic (AFM) two-electron term], and applied to…
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Earlier theoretical results on $p$-$d$ and $d$-$d$ exchange interactions for zinc-blende semiconductors with $\mathrm{Cr}^{2{+}}$ and $\mathrm{Mn}^{3{+}}$ ions are revisited and extended by including contributions beyond the dominating ferromagnetic (FM) superexchange term [i.e., the interband Bloembergen-Rowland-Van Vleck contribution and antiferromagnetic (AFM) two-electron term], and applied to topological Cr-doped HgTe and non-topological (Zn,Cr)Te and (Ga,Mn)N in zinc-blende and wurtzite crystallographic structures. From the obtained values of the $d$-$d$ exchange integrals $J_{ij}$, and by combining the Monte-Carlo simulations with the percolation theory for randomly distributed magnetic ions, we determine magnitudes of Curie temperatures $T_{\text{C}}(x)$ for $\mathrm{Zn}_{1-x}\mathrm{Cr}_x\mathrm{Te}$ and $\mathrm{Ga}_{1-x}\mathrm{Mn}_x\mathrm{N}$ and compare to available experimental data. Furthermore, we find that competition between FM and AFM $d$-$d$ interactions can lead to a spin-glass phase in the case of $\mathrm{Hg}_{1-x}\mathrm{Cr}_x\mathrm{Te}$. This competition, along with a relatively large magnitude of the AF $p$-$d$ exchange energy $N_0β$ can stabilize the quantum spin Hall effect, but may require the application of tilted magnetic field to observe the quantum anomalous Hall effect in HgTe quantum wells doped with Cr, as confirmed by the Chern number determination.
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Submitted 5 June, 2024; v1 submitted 30 October, 2023;
originally announced October 2023.
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Quantum transport and mobility spectrum of topological carriers in (001) SnTe/PbTe heterojunctions
Authors:
D. Śnieżek,
Jarosław Wróbel,
M. Kojdecki,
C. Śliwa,
S. Schreyeck,
K. Brunner,
L. W. Molenkamp,
G. Karczewski,
Jerzy Wróbel
Abstract:
Measurements of magnetotransport in SnTe/PbTe heterojunctions grown by the MBE technique on (001) undoped CdTe substrates were performed. At low magnetic fields, quantum corrections to conductivity were observed that may be attributed to the presence of topological states at the junction interface. For a sample with 5 nm thick SnTe layer, the data analysis suggests that midgap states are actually…
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Measurements of magnetotransport in SnTe/PbTe heterojunctions grown by the MBE technique on (001) undoped CdTe substrates were performed. At low magnetic fields, quantum corrections to conductivity were observed that may be attributed to the presence of topological states at the junction interface. For a sample with 5 nm thick SnTe layer, the data analysis suggests that midgap states are actually gapped. However, the phase coherence effects in 10 nm and 20 nm SnTe/PbTe samples are fully explained assuming existence of gapless Dirac cones. Magnetotransport at higher magnetic fields is described in the framework of mobility spectrum analysis (MSA). We demonstrate that the electron- and hole-like peaks observed simultaneously for all SnTe/PbTe heterojunctions may originate from the concave and convex parts of the energy isosurface for topological states -- and not from the existence of quasiparticles both carrying negative and positive charges. This interpretation is supported by numerical calculations of conductivity tensor components for gapless (100) Dirac cones, performed within a classical model and based on the solutions of Boltzmann transport equation. Our approach shows the feasibility of MSA in application to magnetotransport measurements on topological matter.
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Submitted 20 January, 2023; v1 submitted 10 August, 2022;
originally announced August 2022.
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Disorder-averaged Binder ratio in site-diluted Heisenberg models
Authors:
Cezary Śliwa
Abstract:
It is demonstrated via a numerical experiment (a Monte Carlo simulation) in the context of three-dimensional site-diluted Heisenberg spin systems that a functional dependence of the Binder ratio ($V_4$) on the order parameter correlation length ($ξ/ L$) requires a modification to the usual definition of $V_4$ in disordered systems. An appropriate disorder averaging procedure is proposed.
It is demonstrated via a numerical experiment (a Monte Carlo simulation) in the context of three-dimensional site-diluted Heisenberg spin systems that a functional dependence of the Binder ratio ($V_4$) on the order parameter correlation length ($ξ/ L$) requires a modification to the usual definition of $V_4$ in disordered systems. An appropriate disorder averaging procedure is proposed.
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Submitted 31 August, 2022; v1 submitted 2 May, 2022;
originally announced May 2022.
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Superexchange dominates in magnetic topological insulators
Authors:
Cezary Sliwa,
Carmine Autieri,
Jacek A. Majewski,
Tomasz Dietl
Abstract:
It has been suggested that the enlarged spin susceptibility in topological insulators, described by Van Vleck's formalism, accounts for the ferromagnetism of bismuth-antimony topological chalcogenides doped with transition metal impurities. In contrast, earlier studies of HgTe and related topological systems pointed out that the interband analog of the Ruderman-Kittel-Kasuya-Yosida interaction (th…
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It has been suggested that the enlarged spin susceptibility in topological insulators, described by Van Vleck's formalism, accounts for the ferromagnetism of bismuth-antimony topological chalcogenides doped with transition metal impurities. In contrast, earlier studies of HgTe and related topological systems pointed out that the interband analog of the Ruderman-Kittel-Kasuya-Yosida interaction (the Bloembergen-Rowland mechanism) leads to antiferromagnetic coupling between pairs of localized spins. Here, we critically revisit these two approaches, show their shortcomings, and elucidate why the magnitude of the interband contribution is small even in topological systems. From the proposed theoretical approach and our computational studies of magnetism in Mn-doped HgTe and CdTe, we conclude that, in the absence of band carriers, the superexchange dominates, and its sign depends on the coordination and charge state of magnetic impurities rather than on the topological class of the host material.
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Submitted 4 February, 2022; v1 submitted 28 July, 2021;
originally announced July 2021.
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Momentum-resolved spin splitting in Mn-doped trivial CdTe and topological HgTe semiconductors
Authors:
Carmine Autieri,
Cezary Śliwa,
Rajibul Islam,
Giuseppe Cuono,
Tomasz Dietl
Abstract:
Exchange coupling between localized spins and band or topological states accounts for giant magnetotransport and magnetooptical effects as well as determines spin-spin interactions in magnetic insulators and semiconductors. However, even in archetypical dilute magnetic semiconductors such as Cd$_{1-x}$Mn$_x$Te and Hg$_{1-x}$Mn$_x$Te the evolution of this coupling with the wave vector is not unders…
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Exchange coupling between localized spins and band or topological states accounts for giant magnetotransport and magnetooptical effects as well as determines spin-spin interactions in magnetic insulators and semiconductors. However, even in archetypical dilute magnetic semiconductors such as Cd$_{1-x}$Mn$_x$Te and Hg$_{1-x}$Mn$_x$Te the evolution of this coupling with the wave vector is not understood. A series of experiments have demonstrated that exchange-induced splitting of magnetooptical spectra of Cd$_{1-x}$Mn$_x$Te and Zn$_{1-x}$Mn$_x$Te at the L points of the Brillouin zone is, in contradiction to the existing theories, more than one order of magnitude smaller compared to its value at the zone center and can show an unexpected sign of the effective Landé factors. The origin of these findings we elucidate quantitatively by combining: (i) relativistic first-principles density functional calculations; (ii) a tight-binding approach that takes carefully into account k-dependence of the potential and kinetic sp-d exchange interactions; (iii) a theory of magnetic circular dichroism (MCD) for $E_1$ and $E_1$ + $Δ_1$ optical transitions, developed here within the envelope function $kp$ formalism for the L point of the Brillouin zone in zinc-blende crystals. This combination of methods leads to the conclusion that the physics of MCD at the boundary of the Brillouin zone is strongly affected by the strength of two relativistic effects in particular compounds: (i) the mass-velocity term that controls the distance of the conduction band at the L point to the upper Hubbard band of Mn ions and, thus, a relative magnitude and sign of the exchange splittings in the conduction and valence bands; (ii) the spin-momentum locking by spin-orbit coupling that reduces exchange splitting depending on the orientation of particular L valleys with respect to the magnetization direction.
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Submitted 22 October, 2021; v1 submitted 11 June, 2020;
originally announced June 2020.
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Thermodynamic perturbation theory for non-interacting quantum particles with application to spin-spin interactions in solids
Authors:
Cezary Sliwa,
Tomasz Dietl
Abstract:
The determination of the Landau free energy (the grand thermodynamic potential) by a perturbation theory is advanced to arbitrary order for the specific case of non-interacting fermionic systems perturbed by a one-particle potential. Peculiar features of the formalism are highlighted, and its applicability for bosons is indicated. The results are employed to develop a more explicit approach descri…
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The determination of the Landau free energy (the grand thermodynamic potential) by a perturbation theory is advanced to arbitrary order for the specific case of non-interacting fermionic systems perturbed by a one-particle potential. Peculiar features of the formalism are highlighted, and its applicability for bosons is indicated. The results are employed to develop a more explicit approach describing exchange interactions between spins of Anderson's magnetic impurities in metals, semiconductors, and insulators. Within the fourth order our theory provides on the equal footing formulae for the Ruderman-Kittel-Kasuya-Yosida, Bloembergen-Rowland, superexchange, and two-electron exchange integrals at non-zero temperature.
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Submitted 9 February, 2018;
originally announced February 2018.
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Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers
Authors:
M. Sawicki,
O. Proselkov,
C. Sliwa,
P. Aleshkevych,
J. Z. Domagala,
J. Sadowski,
T. Dietl
Abstract:
Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining {\em uniaxial} magnetic anisotropies associated with biaxial strain a…
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Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining {\em uniaxial} magnetic anisotropies associated with biaxial strain and non-random formation of magnetic dimers in epitaxial (Ga,Mn)As layers. However, the situation appears much less settled in the case of the {\em cubic} term: the theory predicts switchings of the easy axis between in-plane $\langle 100\rangle$ and $\langle 110\rangle$ directions as a function of the hole concentration, whereas only the $\langle 100\rangle$ orientation has been found experimentally. Here, we report on the observation of such switchings by magnetization and ferromagnetic resonance studies on a series of high-crystalline quality (Ga,Mn)As films. We describe our findings by the mean-field $p$-$d$ Zener model augmented with three new ingredients. The first one is a scattering broadening of the hole density of states, which reduces significantly the amplitude of the alternating carrier-induced contribution. This opens the way for the two other ingredients, namely the so-far disregarded single-ion magnetic anisotropy and disorder-driven non-uniformities of the carrier density, both favoring the $\langle 100\rangle$ direction of the apparent easy axis. However, according to our results, when the disorder gets reduced a switching to the $\langle 110\rangle$ orientation is possible in a certain temperature and hole concentration range.
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Submitted 23 February, 2018; v1 submitted 31 January, 2018;
originally announced February 2018.
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Energetic, electronic and magnetic properties of Mn-dimers on reconstructed (001) GaAs surfaces
Authors:
M. Birowska,
C. Śliwa,
J. A. Majewski
Abstract:
We study energetic, magnetic, and electronic properties of diluted substitutional Mn-pairs on the reconstructed $(001)$ GaAs surfaces. The studies are based on first-principles calculations in the framework of the density functional theory. We demonstrate that the stability of the systems strongly depends on the position, orientation, and the distance between the Mn-atoms constituting the pair. In…
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We study energetic, magnetic, and electronic properties of diluted substitutional Mn-pairs on the reconstructed $(001)$ GaAs surfaces. The studies are based on first-principles calculations in the framework of the density functional theory. We demonstrate that the stability of the systems strongly depends on the position, orientation, and the distance between the Mn-atoms constituting the pair. Independently of the considered surface reconstruction pattern, the Mn-pairs with Mn-atoms being the nearest neighbors (NN) on cationic sublattice turn out to be energetically more favorable than the pairs with the larger distance between the Mn-atoms. However, the preferential build-up orientation of the Mn-NN-pair depends on the surface reconstruction and is parallel either to $[110]$ or $[1\bar{1}0]$ crystallographic direction. We reveal also the mechanisms of the magnetic ordering of Mn-NN-pairs. The Mn-NN-pairs along the $[110]$ crystallographic direction exhibit always ferromagnetic alignment of Mn spins, whereas the spins in the Mn-NN-pairs along $[1\bar{1}0]$ direction are mostly anti-ferromagnetically aligned. In the electronic structure of the systems containing Mn-pairs with ferromagnetically aligned spins, we observe the valence band hole states in the neighborhood of Fermi energy. This indicates that the surface ferromagnetism in this prototype of dilute magnetic semiconductors can be explained in terms of the $p$-$d$ Zener model.
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Submitted 17 March, 2017; v1 submitted 31 March, 2016;
originally announced March 2016.
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Orbital magnetization in dilute ferromagnetic semiconductors
Authors:
Cezary Śliwa,
Tomasz Dietl
Abstract:
The relationship between the modern and classical Landau's approach to carrier orbital magnetization is studied theoretically within the envelope function approximation, taking ferromagnetic (Ga,Mn)As as an example. It is shown that while the evaluation of hole magnetization within the modern theory does not require information on the band structure in a magnetic field, the number of basis wave fu…
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The relationship between the modern and classical Landau's approach to carrier orbital magnetization is studied theoretically within the envelope function approximation, taking ferromagnetic (Ga,Mn)As as an example. It is shown that while the evaluation of hole magnetization within the modern theory does not require information on the band structure in a magnetic field, the number of basis wave functions must be much larger than in the Landau approach to achieve the same quantitative accuracy. A numerically efficient method is proposed, which takes advantages of these two theoretical schemes. The computed magnitude of orbital magnetization is in accord with experimental values obtained by x-ray magnetic circular dichroism in (III,Mn)V compounds. The direct effect of the magnetic field on the hole spectrum is studied too, and employed to interpret a dependence of the Coulomb blockade maxima on the magnetic field in a single electron transistor with a (Ga,Mn)As gate.
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Submitted 1 August, 2014; v1 submitted 10 February, 2014;
originally announced February 2014.
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Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors
Authors:
M. Birowska,
C. Sliwa,
J. A. Majewski,
T. Dietl
Abstract:
It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a p…
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It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.
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Submitted 15 February, 2012;
originally announced February 2012.
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Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system
Authors:
Ursula Wurstbauer,
Cezary Śliwa,
Dieter Weiss,
Tomasz Dietl,
Werner Wegscheider
Abstract:
Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation…
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Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation-doped InAs quantum wells, which reveal a magnetic field driven and bias voltage dependent insulator-to-metal transition with abrupt and hysteretic changes of resistance over several orders of magnitude. These phenomena coexist with the quantised Hall effect in high magnetic fields. We show that the exchange coupling between a hole and the parent Mn acceptor produces a magnetic anisotropy barrier that shifts the spin relaxation time of the bound hole to a 100 s range in compressively strained quantum wells. This bistability of the individual Mn acceptors explains the hysteretic behaviour while opening prospects for information storing and processing. At high bias voltage another bistability, caused by the overheating of electrons10, gives rise to abrupt resistance jumps.
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Submitted 28 June, 2011;
originally announced June 2011.
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Thermodynamic and thermoelectric properties of (Ga,Mn)As and related compounds
Authors:
C. Sliwa,
T. Dietl
Abstract:
Various experimental results providing information on thermodynamic density of states in (Ga,Mn)As are analyzed theoretically assuming that holes occupy GaAs-like valence bands. Allowing for Gaussian fluctuations of magnetization, the employed model describes correctly a critical behavior of magnetic specific heat found experimentally in (Ga,Mn)As near the Curie temperature T_C [S. Yuldashev et al…
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Various experimental results providing information on thermodynamic density of states in (Ga,Mn)As are analyzed theoretically assuming that holes occupy GaAs-like valence bands. Allowing for Gaussian fluctuations of magnetization, the employed model describes correctly a critical behavior of magnetic specific heat found experimentally in (Ga,Mn)As near the Curie temperature T_C [S. Yuldashev et al., Appl. Phys. Express 3, 073005 (2010)]. The magnitudes of room temperature thermoelectric power, as measured for GaAs:Be and (Ga,Mn)As [M. A. Mayer et al., Phys. Rev. B 81, 045205 (2010)], are consistent with the model for the expected energy dependencies of the hole mobility. The same approach describes also temperature variations of conductance specific to the Anderson-Mott localization, found for various dimensionality (Ga,Mn)As nanostructures at subkelvin temperatures [D. Neumaier et al., Phys. Rev. Lett. 103, 087203 (2009)]. We conclude that the examined phenomena do not provide evidence for an enhancement of density of states by the presence of an impurity band at the Fermi energy in ferromagnetic (Ga,Mn)As. Furthermore, we provide for (Ga,Mn)As expected values of both electronic specific heat at low temperatures T << T_C and magnetization as a function of the magnetic field at T_C.
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Submitted 7 March, 2011; v1 submitted 3 March, 2011;
originally announced March 2011.
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Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs
Authors:
Wiktor Stefanowicz,
Cezary Śliwa,
Pavlo Aleshkevych,
Tomasz Dietl,
Matthias Döppe,
Ursula Wurstbauer,
Werner Wegscheider,
Dieter Weiss,
Maciej Sawicki
Abstract:
The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR) and magnetooptical effects. Experimental results are described considering cubic and two kinds of uniaxial magnetic anisotropy. The magnitude of cubic and un…
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The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR) and magnetooptical effects. Experimental results are described considering cubic and two kinds of uniaxial magnetic anisotropy. The magnitude of cubic and uniaxial anisotropy constants is found to be proportional to the fourth and second power of saturation magnetization, respectively. Similarly to the case of (001) samples, the spin reorientation transition from uniaxial anisotropy with the easy along the [-1, 1, 0] direction at high temperatures to the biaxial <100> anisotropy at low temperatures is observed around 25 K. The determined values of the anisotropy constants have been confirmed by FMR studies. As evidenced by investigations of the polar magnetooptical Kerr effect, the particular combination of magnetic anisotropies allows the out-of-plane component of magnetization to be reversed by an in-plane magnetic field. Theoretical calculations within the p-d Zener model explain the magnitude of the out-of-plane uniaxial anisotropy constant caused by epitaxial strain, but do not explain satisfactorily the cubic anisotropy constant. At the same time the findings point to the presence of an additional uniaxial anisotropy of unknown origin. Similarly to the case of (001) films, this additional anisotropy can be explained by assuming the existence of a shear strain. However, in contrast to the (001) samples, this additional strain has an out-of-the-(001)-plane character.
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Submitted 8 February, 2010; v1 submitted 2 February, 2010;
originally announced February 2010.
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Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
Authors:
C. Sliwa,
T. Dietl
Abstract:
Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral reported for GaAs:Mn arises from exchange interactions between electrons and holes bound to Mn acceptors. This interaction dominates over the coupling between electr…
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Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral reported for GaAs:Mn arises from exchange interactions between electrons and holes bound to Mn acceptors. This interaction dominates over the coupling between electrons and Mn spins, so far regarded as the main source of spin-dependent phenomena. A reduced magnitude of the apparent s-d exchange integral found in n-type materials is explained by the presence of repulsive Coulomb potentials at ionized Mn acceptors and a bottleneck effect.
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Submitted 27 November, 2008; v1 submitted 24 July, 2007;
originally announced July 2007.
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Magnitude and crystalline anisotropy of hole magnetization in (Ga,Mn)As
Authors:
C. Sliwa,
T. Dietl
Abstract:
Theory of hole magnetization Mc in zinc-blende diluted ferromagnetic semiconductors is developed relaxing the spherical approximation of earlier approaches. The theory is employed to determine Mc for (Ga,Mn)As over a wide range of hole concentrations and a number of crystallographic orientations of Mn magnetization. It is found that anisotropy of Mc is practically negligible but the obtained mag…
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Theory of hole magnetization Mc in zinc-blende diluted ferromagnetic semiconductors is developed relaxing the spherical approximation of earlier approaches. The theory is employed to determine Mc for (Ga,Mn)As over a wide range of hole concentrations and a number of crystallographic orientations of Mn magnetization. It is found that anisotropy of Mc is practically negligible but the obtained magnitude of Mc is significantly greater than that determined in the spherical approximation. Its sign and value compares favorably with the results of available magnetization measurements and ferromagnetic resonance studies.
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Submitted 6 September, 2006;
originally announced September 2006.
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The influence of electrostatic potentials on the apparent s-d exchange energy in III-V diluted magnetic semiconductors
Authors:
C. Sliwa,
T. Dietl
Abstract:
The muffin-tin model of an effective-mass electron interacting with magnetic ions in semiconductors is extended to incorporate electrostatic potentials that are present in the case of Mn-based III-V compounds (${Ga}_{1-x} {Mn}_x {N}$, ${Ga}_{1-x} {Mn}_x {As}$). Since the conduction band electron is repelled from negatively charged magnetic ions and attracted by compensating donors, the \emph{app…
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The muffin-tin model of an effective-mass electron interacting with magnetic ions in semiconductors is extended to incorporate electrostatic potentials that are present in the case of Mn-based III-V compounds (${Ga}_{1-x} {Mn}_x {N}$, ${Ga}_{1-x} {Mn}_x {As}$). Since the conduction band electron is repelled from negatively charged magnetic ions and attracted by compensating donors, the \emph{apparent} value of the s-d exchange coupling $N_0 α$ is reduced. It is shown that the magnitude of this effect increases when x diminishes. Our model may explain an unusual behavior of electron spin splitting observed recently in those two materials in the Mn concentration range x <= 0.2%.
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Submitted 5 May, 2005;
originally announced May 2005.
