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Condensed Matter > Materials Science

arXiv:0707.3542 (cond-mat)
[Submitted on 24 Jul 2007 (v1), last revised 27 Nov 2008 (this version, v3)]

Title:Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors

Authors:C. Sliwa, T. Dietl
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Abstract: Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral reported for GaAs:Mn arises from exchange interactions between electrons and holes bound to Mn acceptors. This interaction dominates over the coupling between electrons and Mn spins, so far regarded as the main source of spin-dependent phenomena. A reduced magnitude of the apparent s-d exchange integral found in n-type materials is explained by the presence of repulsive Coulomb potentials at ionized Mn acceptors and a bottleneck effect.
Comments: 9 pages, 6 figures; in this version the value of the bound hole g-factor is corrected and cond-mat/0505126 is included as section VI
Subjects: Materials Science (cond-mat.mtrl-sci); Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:0707.3542 [cond-mat.mtrl-sci]
  (or arXiv:0707.3542v3 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0707.3542
Journal reference: Physical Review B 78, 165205 (2008)
Related DOI: https://doi.org/10.1103/PhysRevB.78.165205

Submission history

From: Cezary Sliwa [view email]
[v1] Tue, 24 Jul 2007 13:13:14 UTC (20 KB)
[v2] Thu, 26 Jul 2007 13:40:37 UTC (20 KB)
[v3] Thu, 27 Nov 2008 18:06:52 UTC (88 KB)
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