Showing 1–50 of 61 results for author: Shur, M S

Rectification and bolometric terahertz radiation detectors based on perforated graphene structures exhibiting plasmonic resonant response

Authors: V. Ryzhii, C. Tang, M. Ryzhii, T. Otsuji, M. S. Shur

Abstract: We propose and evaluate the characteristics of the terahertz (THz) detectors based on perforated graphene layers (PGLs). The PGL structures constitute the interdigital in-plane arrays of the graphene microribbons (GMRs) connected by the sets of narrow constrictions, which form the graphene nanoribbon (GNR) bridges. The PGL detector operation is associated with the rectification and hot-carrier bol… ▽ More We propose and evaluate the characteristics of the terahertz (THz) detectors based on perforated graphene layers (PGLs). The PGL structures constitute the interdigital in-plane arrays of the graphene microribbons (GMRs) connected by the sets of narrow constrictions, which form the graphene nanoribbon (GNR) bridges. The PGL detector operation is associated with the rectification and hot-carrier bolometric mechanisms. The excitation of plasmonic oscillations in the GMR-GNR arrays can reinforce these mechanisms. The room temperature PGL detector responsivity and detectivity are calculated as function of the radiation frequency and device structure parameters. The effects of the rectification and hot-carrier mechanisms are compared. The PGL THz detectors under consideration can exhibit highly competitive values of responsivity and detectivity. △ Less

Submitted 18 June, 2025; v1 submitted 4 April, 2025; originally announced April 2025.

Comments: 9 pages, 6 figures

Report number: 2504.04036

Journal ref: J. Appl. Phys. 137, 244501 (2025)

Hot-carrier thermal breakdown and S-type current-voltage characteristics in perforated graphene structures

Authors: V. Ryzhii, C. Tang, M. Ryzhii, M. S. Shur

Abstract: We investigate the carrier transport characteristics of perforated graphene layer (PGL) composed of arrays of interdigital coplanar graphene microribbons (GMRs) connected by graphene nanoribbon (GNR) bridges. We analyze their operation at room-temperature. Under an applied bias voltage, two-dimensional electron and hole systems (2DES and 2DHS) form in adjacent GMRs. The terminal current in these P… ▽ More We investigate the carrier transport characteristics of perforated graphene layer (PGL) composed of arrays of interdigital coplanar graphene microribbons (GMRs) connected by graphene nanoribbon (GNR) bridges. We analyze their operation at room-temperature. Under an applied bias voltage, two-dimensional electron and hole systems (2DES and 2DHS) form in adjacent GMRs. The terminal current in these PGL structures is primarily governed by thermionic transport across the GNR bridges. As electrons and holes traverse the GNRs, they induce heating in the 2DES and 2DHS, creating a positive feedback loop between carrier heating and thermionic emission. This phenomenon, characterized as hot-carrier thermal breakdown, can give rise to S-shaped inter-GMR current-voltage characteristics. These unique transport properties make PGLs promising candidates for fast, voltage-controlled room-temperature switches and electromagnetic radiation detectors. △ Less

Submitted 18 March, 2025; originally announced March 2025.

Comments: 6 pages, 4 figures

Detection of terahertz radiation using topological graphene micro-nanoribbon structures with transverse plasmonic resonant cavities

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, M. S. Shur

Abstract: The lateral interdigital array of the graphene microribbons (GMRs) on the h-BN substrate connected by narrow graphene nanoribbon (GNR) bridges serves as an efficient detector of terahertz (THz) radiation. The detection is enabled by the nonlinear GNR elements providing the rectification of the THz signals. The excitation of plasmonic waves along the GMRs (transverse plasmonic oscillations) by impi… ▽ More The lateral interdigital array of the graphene microribbons (GMRs) on the h-BN substrate connected by narrow graphene nanoribbon (GNR) bridges serves as an efficient detector of terahertz (THz) radiation. The detection is enabled by the nonlinear GNR elements providing the rectification of the THz signals. The excitation of plasmonic waves along the GMRs (transverse plasmonic oscillations) by impinging THz radiation can lead to a strong resonant amplification of the rectified signal current and substantial enhancement of the detector response. The GMR arrays with the GNR bridges s can be formed by the perforation of uniform graphene layers △ Less

Submitted 11 November, 2024; v1 submitted 23 September, 2024; originally announced September 2024.

Comments: 9 pages, 6 figures

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ul… ▽ More We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ultimate modulation frequency of the GC-FET bolometers are determined by the efficiency of the hot-electron energy transfer to the lattice and the GC side contacts due to the 2DEG lateral thermal conductance. The dependences of these mechanisms on the band structure and geometrical parameters open the way for the GC-FET bolometers optimization, in particular, for the enhancement of the maximum modulation frequency. △ Less

Submitted 10 March, 2024; originally announced March 2024.

Comments: 9 pages, 11 figures

Terahertz plasmonic resonances in coplanar graphene nanoribbon structures

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, M. S. Shur

Abstract: We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron and hole inductances and the lateral inter-CNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic… ▽ More We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron and hole inductances and the lateral inter-CNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic oscillations in the CNR structures with long GNRs. The GNR structures under consideration can be used in different THz devices as the resonant structures incorporated in THz detectors, THz sources using resonant-tunneling diodes, photomixers, and surface acoustic wave sensors. △ Less

Submitted 9 March, 2024; v1 submitted 6 February, 2024; originally announced February 2024.

Comments: 8 pages, 4 figures

Journal ref: J. Appl. Phys. 135, 114503 (2024)

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Authors: V. Ryzhii, M. S. Shur, M. Ryzhii, V. Mitin, C. Tang, T. Otsuji

Abstract: We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector… ▽ More We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector response on the incoming THz signal phase shift and the THz radiation angle of incidence. △ Less

Submitted 15 October, 2023; originally announced October 2023.

Comments: 5 pages, 4 figures

Micromechanical field-effect transistor terahertz detectors with optical interferometric readout

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, S. G. Kalenkov, V. Mitin, M. S. Shur

Abstract: We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optic… ▽ More We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optical output. The combination of the mechanical and plasmonic resonances in the MMFET with the optical amplification enables an effective THz detection. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Comments: 8 pages, 3 figures

Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances

Authors: M. Ryzhii, V. Ryzhii, M. S. Shur, V. Mitin, C. Tang, T. Otsuji

Abstract: We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short sect… ▽ More We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short section of the GC is sandwiched between the b-P gate BL and the h-BN bottom layer. The b-P gate BL serves as the window for the electron thermionic current from the GC. The electron mobility in the GC section encapsulated in h-BN can be fairly large. This might enable a strong resonant plasmonic response of the GC-FET detectors despite relatively lower electron mobility in the GC section covered by the b-P window BL. The narrow b-P window diminishes the Peltier cooling and enhances the detector performance. The proposed device structure and its operation principle promote elevated values of the room-temperature GC-FET THz detector responsivity and other characteristics, especially at the plasmonic resonances. △ Less

Submitted 2 June, 2023; originally announced June 2023.

Comments: 9 pages, 8 figures

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$_x$P$_{1-x}$ gate layer

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to a… ▽ More We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As$_x$P$_{1-x}$ energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As$_x$P$_{1-x}$ atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of $10^3$~A/W. The speed of the GC-FET detector's response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures. △ Less

Submitted 23 April, 2023; originally announced April 2023.

Comments: 13 pages, 5 figures

Report number: 2304.11635

Journal ref: Sci Rep 13, 9665 (2023)

Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to… ▽ More We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to the excitation of plasmonic oscillations in the GC by the THz signals, the GC-FET detector response can be pronouncedly resonant, leading to elevated values of the detector responsivity. The lateral thermal conductivity of the 2DEG can markedly affect the GC-FET responsivity, in particular, its spectral characteristics. This effect should be considered for the optimization of the GC-FET detectors. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Comments: 9 pages, 3 figures

Report number: arXiv:2303.08492

Journal ref: Phys. Rev. Applied 19, 064033 (2023)

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emissi… ▽ More We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emission of the hot electrons from the GC to the MG. This results in the variation of the floating gate potential, which affects the source-drain current. At the THz radiation frequencies close to the plasmonic resonance frequencies in the gated GC, the variation of the source-drain current and, hence, the detector responsivity can be resonantly large. △ Less

Submitted 24 April, 2023; v1 submitted 15 March, 2023; originally announced March 2023.

Comments: 8 pages, 4 figures

Report number: 2303.08488

Journal ref: J. Appl. Phys. 133, 174501 (2023)

Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener-Klein interband tunneling

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: The Zener-Klein (ZK) interband tunneling in graphene layers (GLs) with the lateral n-i-n and p-i-n junctions results in the nonlinear I-V characteristics that can be used for the rectification and detection of the terahertz (THz) signals. The transit time delay of the tunneling electrons and holes in the depletion regions leads to the phase shift between the THz current and THz voltage causing the… ▽ More The Zener-Klein (ZK) interband tunneling in graphene layers (GLs) with the lateral n-i-n and p-i-n junctions results in the nonlinear I-V characteristics that can be used for the rectification and detection of the terahertz (THz) signals. The transit time delay of the tunneling electrons and holes in the depletion regions leads to the phase shift between the THz current and THz voltage causing the negative dynamic conductance in a certain frequency range and resulting in the so-called transit-time (TT) instability. The combination of the ZK tunneling and the TT negative dynamic conductance enables resonant THz detection and the amplification and generation of THz radiation. We propose and evaluate the THz devices based on periodic cascade GL p-i-n structures exhibiting the TT resonances (GPIN-TTDs). Such structures can serve as THz amplifiers and, being placed in a Fabri-Perot cavity, or coupled to a THz antenna or using a ring oscillator connection, as THz radiation sources. △ Less

Submitted 29 August, 2022; originally announced August 2022.

Comments: 13 pages, 9 figures

Resonant plasmonic terahertz detection in gated graphene p-i-n field-effect structures enabled by the Zener-Klein tunneling nonlinearity

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors exhibiting nonlinear $I-V$ characteristics due to the Zener-Klein tunneling. This region enables the THz signal rectification, which provides their detection. The gated… ▽ More We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors exhibiting nonlinear $I-V$ characteristics due to the Zener-Klein tunneling. This region enables the THz signal rectification, which provides their detection. The gated regions serve as the electron and hole reservoirs and the THz resonant plasma cavities. The resonant excitation of the electron and hole plasmonic oscillations results in a substantial increase in the THz detector responsivity at the signal frequency close to the plasma frequency and its harmonics. Due to the specifics of the i-region AC conductance frequency dependence, associated with the transit-time effects, the GPIN-FET response at the frequency, corresponding to the excitation of a higher plasmonic mode, can be stronger than for the fundamental mode. The GPIN-FETs can exhibit fairly high responsivity at room temperatures. Lowering of the latter can result in its further enhancement due to weakening of the carrier momentum relaxation. △ Less

Submitted 10 September, 2022; v1 submitted 21 June, 2022; originally announced June 2022.

Comments: 13 pages, 5 figures

Report number: 2206.1021

Journal ref: Phys.Rev.Applied 18, 034022 (2022)

Ballistic injection terahertz plasma instability in graphene n+-i-n-n+ field-effect transistors and lateral diodes

Authors: V. Ryzhii, M. Ryzhii, A. Satou, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the… ▽ More We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters. △ Less

Submitted 20 October, 2021; originally announced October 2021.

Comments: 8 pages, 4 figures

Report number: 2110.10479

Journal ref: Phis. Stat. Sol. A 2021, 2100694

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

Authors: V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, V. Mitin, M. S. Shur

Abstract: We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p+-p-i-n-n+ graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n- and p-regions… ▽ More We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p+-p-i-n-n+ graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n- and p-regions and a positive feedback between the amplified dragged current and the injected tunneling current. A sufficiently strong drag can result in the negative real part of the GTTS impedance enabling the plasma instability and the self-excitation of the plasma oscillations in the terahertz (THz) frequency range. This effect might be used for the generation of the THz radiation. △ Less

Submitted 2 September, 2021; originally announced September 2021.

Comments: 9 pages, 7 figures

Report number: 2109.0073

Journal ref: Phys.Rev.Applied 16, 064054 (2021)

Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium electrons in the gated channel by the injected ballistic electrons resulting in a positive feedback between the amplified dragged electrons current and the injec… ▽ More We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium electrons in the gated channel by the injected ballistic electrons resulting in a positive feedback between the amplified dragged electrons current and the injected current. The plasma excitations arise when the drag effect is sufficiently strong. The drag efficiency and the plasma frequency are determined by the quasi-equilibrium electrons Fermi energy (i.e., by their density). The conditions of the terahertz plasma oscillation self-excitation can be realized in the G-FETs with realistic structural parameters at room temperature enabling the potential G-FET-based radiation sources for the THz applications. △ Less

Submitted 29 June, 2021; originally announced June 2021.

Comments: 5 pages, 3 figures

Report number: 2106.15204

Journal ref: Appl. Phys.Lett, 119,093501 (2021)

S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium electrons due the violation of the Galilean and Lorentz invariance in the systems with a linear electron dispersion. This effect can result in the S-shaped current… ▽ More We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium electrons due the violation of the Galilean and Lorentz invariance in the systems with a linear electron dispersion. This effect can result in the S-shaped current-voltage characteristics (IVs). The resulting negative differential conductivity enables the hysteresis effects and current filamentation that can be used for the implementation of voltage switching devices. Due to a strong nonlinearity of the IVs, the G-FETs can be used for an effective frequency multiplication and detection of terahertz radiation. △ Less

Submitted 13 July, 2021; v1 submitted 9 April, 2021; originally announced April 2021.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. Applied 16, 014001 (2021)

Modulation characteristics of uncooled graphene photodetectors

Authors: V. Ryzhii, M. Ryzhii, T. Otsuji, V. Leiman, V. Mitin, M. S. Shur

Abstract: We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimensional electron-hole plasma in uniform graphene layers (GLs) and perforated graphene layers (PGLs) due to the absorption of THz and IR radiation. The performance of the photodetectors (both the GL-photoresistor and the PG… ▽ More We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimensional electron-hole plasma in uniform graphene layers (GLs) and perforated graphene layers (PGLs) due to the absorption of THz and IR radiation. The performance of the photodetectors (both the GL-photoresistor and the PGL-based barrier photodiodes) are compared. Their characteristics are also compared with the GL reverse-biased photodiodes. The obtained results allow to evaluate the ultimate modulation frequencies of these photodetectors and can be used for their optimization. △ Less

Submitted 1 February, 2021; originally announced February 2021.

Comments: 10 pages, 3 figures

Report number: 2102.01299

Journal ref: J. Appl. Phys. 129, 214503 (2021)

Heat capacity of nonequilibrium electron-hole plasma in graphene layers and graphene~bilayers

Authors: V. Ryzhii, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur

Abstract: We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} \simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier hea… ▽ More We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} \simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier heat capacity $c_{GBL}$ changes from $c_{GBL} \simeq 2.37$ at $T \lesssim 300$~K to $c_{GBL} \simeq 6.58$ at elevated temperatures. These values are markedly differentfrom the heat capacity of classical two-dimensional carriers with $c = 1$. The obtained results can be useful for the optimization of different GL- and GBL-based high-speed devices. △ Less

Submitted 7 November, 2020; originally announced November 2020.

Comments: 6 pages, one figure

Journal ref: Phys. Rev. B 103, 245414 (2021)

Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride

Authors: V Ryzhii, T Otsuji, M Ryzhii, V Leiman, P P Maltsev, V E Karasik, V Mitin, M S Shur

Abstract: We develop the device model for the proposed injection (electrically) driven thermal light emitters (IDLEs) based on the vertical Hexagonal Boron Nitride Layer/Graphene Layer/ Hexagonal Boron Nitride Layer (hBNL/GL/hBNL) heterostructures and analyze their dynamic response. The operation of the IDLEs is associated with the light emission of the hot two-dimensional electron-hole plasma (2DEHP) gener… ▽ More We develop the device model for the proposed injection (electrically) driven thermal light emitters (IDLEs) based on the vertical Hexagonal Boron Nitride Layer/Graphene Layer/ Hexagonal Boron Nitride Layer (hBNL/GL/hBNL) heterostructures and analyze their dynamic response. The operation of the IDLEs is associated with the light emission of the hot two-dimensional electron-hole plasma (2DEHP) generated in the GL by both the lateral injection from the side contacts and the vertical injection through the hBNL (combined injection) heating the 2DEHP. The temporal variation of the injection current results in the variation of the carrier effective temperature and their density in the GL leading to the modulation of the output light. We determine the mechanisms limiting the IDLE efficiency and the maximum light modulation frequency. A large difference between the carrier and lattice temperatures the IDLEs with an effective heat removal enables a fairly large modulation depth at the modulation frequencies about dozen of GHz in contrast to the standard incandescent lamps. We compare the IDLEs with the combined injection under consideration and IDLEs using the carrier Joule heating by lateral current. The obtained results can be used for the IDLE optimization. △ Less

Submitted 10 October, 2020; originally announced October 2020.

Comments: 19 pages, 6 figures

Hydrodynamic Inverse Faraday Effect in Two Dimensional Electron Liquid

Authors: S. O. Potashin, V. Yu. Kachorovskii, M. S. Shur

Abstract: We show that a small conducting object, such as a nanosphere or a nanoring, embedded into or placed in the vicinity of the two-dimensional electron liquid (2DEL) and subjected to a circularly polarized electromagnetic radiation induces ``twisted'' plasmonic oscillations in the adjacent 2DEL. The oscillations are rectified due to the hydrodynamic nonlinearities leading to the helicity sensitive cir… ▽ More We show that a small conducting object, such as a nanosphere or a nanoring, embedded into or placed in the vicinity of the two-dimensional electron liquid (2DEL) and subjected to a circularly polarized electromagnetic radiation induces ``twisted'' plasmonic oscillations in the adjacent 2DEL. The oscillations are rectified due to the hydrodynamic nonlinearities leading to the helicity sensitive circular dc current and to a magnetic moment. This hydrodynamic inverse Faraday effect (HIFE) can be observed at room temperature in different materials. The HIFE is dramatically enhanced in a periodic array of the nanospheres forming a resonant plasmonic coupler. Such a coupler exposed to a circularly polarized wave converts the entire 2DEL into a vortex state. Hence, the twisted plasmonic modes support resonant plasmonic-enhanced gate-tunable optical magnetization. Due to the interference of the plasmonic and Drude contributions, the resonances have an asymmetric Fano-like shape. These resonances present a signature of the 2DEL properties not affected by contacts and interconnects and, therefore, providing the most accurate information about the 2DEL properties. In particular, the widths of the resonances encode direct information about the momentum relaxation time and viscosity of the 2DEL. △ Less

Submitted 10 August, 2020; v1 submitted 22 January, 2020; originally announced January 2020.

Comments: 18 pages, 8 figures, 2 tables, replaced with published version

Journal ref: Phys. Rev. B 102, 085402 (2020)

TCAD model for TeraFET detectors operating in a large dynamic range

Authors: Xueqing Liu, Michael S. Shur

Abstract: We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analyt… ▽ More We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analytical theory of the TeraFET detectors. The models incorporate the response saturation effect at high intensities of the THz radiation observed in experiments and reveal the physics of the response saturation associated with different mechanisms for different material systems. These mechanisms include the gate leakage, the velocity saturation and the avalanche effect. △ Less

Submitted 13 August, 2019; originally announced August 2019.

Comments: 5 pages, 9 figures

Negative terahertz conductivity at vertical carrier injection in a black-Arsenic-Phosphorus-Graphene heterostructure integrated with a light-emitting diode

Authors: Victor Ryzhii, Maxim Ryzhii, Taiichi Otsuji, Valery E. Karasik, Vladimir G. Leiman, Vladimir Mitin, Michael S. Shur

Abstract: We propose and analyze the heterostructure comprising a black-arsenic-phosphorus layer (b-As$_{1-x}$P$_x$L) and a graphene layer (GL) integrated with a light-emitting diode (LED). The integrated b-As$_{1-x}$P$_x$L-GL-LED heterostructure can serve as an active part of the terahertz (THz) laser using the interband radiative transitions in the GL. The feasibility of the proposed concept is enabled by… ▽ More We propose and analyze the heterostructure comprising a black-arsenic-phosphorus layer (b-As$_{1-x}$P$_x$L) and a graphene layer (GL) integrated with a light-emitting diode (LED). The integrated b-As$_{1-x}$P$_x$L-GL-LED heterostructure can serve as an active part of the terahertz (THz) laser using the interband radiative transitions in the GL. The feasibility of the proposed concept is enabled by the combination of relatively narrow energy gap in the b-As$_{1-x}$P$_x$L and the proper band alignment with the GL. The operation of the device in question is associated with the generation of the electron-hole pairs by the LED emitted near-infrared radiation in the b-As$_{1-x}$P$_x$L, cooling of the photogenerated electrons and holes in this layer, and their injection into the GL. Since the minimum b-As$_{1-x}$PL energy gap is smaller than the energy of optical phonons in the GL, , the injection into the GL can lead to a relatively weak heating of the two-dimensional electron-hole plasma (2D-EHP) in the GL. At the temperatures somewhat lower than the room temperature, the injection can cool the 2D-EHP. This is beneficial for the interband population inversion in the GL, reinforcement of its negative dynamic conductivity, %in the THz range and the realization of the optical and plasmonic modes lasing supporting the new types of the THz radiation sources. △ Less

Submitted 30 January, 2019; originally announced January 2019.

Comments: 10 pages, 4 figures

Amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, A. A. Dubinov, V. Ya. Aleshkin, V. E. Karasik, M. S. Shur

Abstract: We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (PL) (p$^+$PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about… ▽ More We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (PL) (p$^+$PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about 200 meV), the hole injection can effectively cool down the two-dimensional electron-hole plasma in the GL. This simplifies the realization of the interband population inversion and the achievement of the negative dynamic conductivity in the terahertz (THz) frequency range enabling the amplification of the surface plasmon modes. The later can lead to the plasmon lasing. The conversion of the plasmons into the output radiation can be used for a new types of the THz sources. △ Less

Submitted 2 January, 2019; originally announced January 2019.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. B 100, 115436 (2019)

Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures

Authors: V. Ryzhii, M. Ryzhii, D. S. Ponomarev, V. G. Leiman, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluated the hot-carrier uncooled bolometric photodetectors based on the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs) with the GP channel. The operation of the GP-LDs and GP-FET photodetectors is associated with t… ▽ More We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluated the hot-carrier uncooled bolometric photodetectors based on the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs) with the GP channel. The operation of the GP-LDs and GP-FET photodetectors is associated with the carrier heating by the incident radiation absorbed in the G-layer due to the intraband transitions. The carrier heating leads to the relocation of a significant fraction of the carriers into the P-layer. Due to a relatively low mobility of the carriers in the P-layer, their main role is associated with a substantial reinforcement of the scattering of the carriers. The GP-FET bolometric photodetector characteristics are effectively controlled by the gate voltage. A strong negative conductivity of the GP-channel can provide much higher responsivity of the THz hot-carriers GP-LD and GP-FET bolometric photodetectors in comparison with the bolometers with solely the G-channels. △ Less

Submitted 27 August, 2018; originally announced August 2018.

Comments: 12 pages, 5 figures

Plasmonic Helicity-Driven Detector of terahertz radiation

Authors: I. V. Gorbenko, V. Yu. Kachorovskii, M. S. Shur

Abstract: We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the plasmonic resonances and oscillates with the phase shift between excitation signals on the source and drain. The resonance line shape is an asymmetric function… ▽ More We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the plasmonic resonances and oscillates with the phase shift between excitation signals on the source and drain. The resonance line shape is an asymmetric function of the frequency deviation from the resonance. In contrast, the helicity-insensitive part of the response is symmetrical. These properties yield significant advantage for using plasmonic detectors as terahertz and far infrared spectrometers and interferometers. △ Less

Submitted 14 July, 2018; originally announced July 2018.

Comments: 5 pages, 2 figures

Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model

Authors: V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, P. P. Maltsev, D. S. Ponomarev, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G- and P-layers, is characterized by a single effective temperature. We demonstra… ▽ More We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G- and P-layers, is characterized by a single effective temperature. We demonstrate that a strong electric-field dependence of the G-P-channel conductivity and substantially non-linear current-voltage characteristics, exhibiting a negative differential conductivity, are associated with the carrier heating and the real-space carrier transfer between the G- and P-layers. The predicted features of the G-P-systems can be used in the detectors and sources of electromagnetic radiation and in the logical circuits. △ Less

Submitted 4 July, 2018; v1 submitted 16 June, 2018; originally announced June 2018.

Comments: 11 pges, 8 figures

Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure

Authors: V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur, V. Ryzhii

Abstract: We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A$_3$B$_5$ heterostr… ▽ More We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A$_3$B$_5$ heterostructures. △ Less

Submitted 23 January, 2018; originally announced January 2018.

Comments: 6 pages, 6 figures

Device model for pixelless infrared image up-converters based on polycrystalline graphene heterostructures

Authors: V. Ryzhii, M. S. Shur, M. Ryzhii, V. E. Karasik, T. Otsuj

Abstract: We develop a device model for pixelless converters of far/mid-infrared radiation (FIR/MIR) images into near-infrared/visible (NIR/VIR) images. These converters use polycrystalline graphene layers (PGLs) immersed in the van der Waals (vdW) materials integrated with light emitting diode (LED). The PGL serves as an element of the PGL infrared photodetector (PGLIP) sensitive to the incoming FIR/MIR du… ▽ More We develop a device model for pixelless converters of far/mid-infrared radiation (FIR/MIR) images into near-infrared/visible (NIR/VIR) images. These converters use polycrystalline graphene layers (PGLs) immersed in the van der Waals (vdW) materials integrated with light emitting diode (LED). The PGL serves as an element of the PGL infrared photodetector (PGLIP) sensitive to the incoming FIR/MIR due to the interband absorption. The spatially non-uniform photocurrent generated in the PGLIP repeats (mimics) the non-uniform distribution (image) created by the incident FIR/MIR. The injection of the nonuniform photocurrent into the LED active layer results in the nonuniform NIR/VIR image reproducing the FIR/MIR image. The PGL and the entire layer structure are not deliberately partitioned into pixels. We analyze the characteristics of such pixelless PGLIP-LED up-converters and show that their image contrast transfer function and the up-conversion efficiency depend on the PGL lateral resistivity. The up-converter exhibits high photoconductive gain and conversion efficiency when the lateral resistivity is sufficiently high. Several teams have successfully demonstrated the large area PGLs with the resistivities varying in a wide range. Such layers can be used in the pixelless PGLIP-LED image up-converters. The PGLIP-LED image up-converters can substantially surpass the image up-converters based on the quantum-well infrared photodetector (QWIP) integrated with the LED. These advantages are due to the use of the interband FIR/NIR absorption and a high photoconductive gain in the GLIPs. △ Less

Submitted 24 October, 2017; originally announced October 2017.

Comments: 11 pages, 6 figures

Effect of doping on the characteristics of infrared photodetectors based on van der Waals~heterostructures with multiple graphene layers

Authors: V. Ryzhii, M. Ryzhii, V. Leiman, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We study the operation of infrared photodetectors based on van der Waals heterostructures with the multiple graphene layers (GLs) and n-type emitter and collector contacts. The operation of such GL infrared photodetectors (GLIPs) is associated with the photoassisted escape of electrons from the GLs into the continuum states in the conduction band of the barrier layers due to the interband photon a… ▽ More We study the operation of infrared photodetectors based on van der Waals heterostructures with the multiple graphene layers (GLs) and n-type emitter and collector contacts. The operation of such GL infrared photodetectors (GLIPs) is associated with the photoassisted escape of electrons from the GLs into the continuum states in the conduction band of the barrier layers due to the interband photon absorption, the propagation of these electrons and the electrons injected from the emitter across the heterostructure and their collection by the collector contact. The space charge of the holes trapped in the GLs provides a relatively strong injection and large photoelectric gain. We calculate the GLIP responsivity and dark current detectivity as functions of the energy of incident infrared photons and the structural parameters. It is shown that both the periodic selective doping of the inter-GL barrier layers and the GL doping lead to a pronounced variation of the GLIP spectral characteristics, particularly near the interband absorption threshold, while the doping of GLs solely results in a substantial increase in the GLIP detectivity. The doping "engineering" opens wide opportunities for the optimization of GLIPs for operation in different parts of radiation spectrum from near infrared to terahertz. △ Less

Submitted 13 May, 2017; originally announced May 2017.

Comments: 10 pages, 7 figures

Amplified-reflection plasmon instabilities in grating-gate plasmonic crystals

Authors: Aleksandr S. Petrov, Dmitry Svintsov, Victor Ryzhii, Michael S. Shur

Abstract: We identify a possible mechanism of the plasmon instabilities in periodically gated two-dimensional electron systems with a modulated electron density (plasmonic crystals) under direct current. The instability occurs due to the amplified reflection of the small density perturbations from the gated/ungated boundaries under the proper phase matching conditions between the crystal unit cells. Based o… ▽ More We identify a possible mechanism of the plasmon instabilities in periodically gated two-dimensional electron systems with a modulated electron density (plasmonic crystals) under direct current. The instability occurs due to the amplified reflection of the small density perturbations from the gated/ungated boundaries under the proper phase matching conditions between the crystal unit cells. Based on the transfer-matrix formalism, we derive the generic dispersion equation for the travelling plasmons in these structures. Its solution in the hydrodynamic limit shows that the threshold drift velocity for the instability can be tuned below the plasmon phase and carrier saturation velocities, and the plasmon increment can exceed the collisional damping rate typical to III-V semiconductors at 77 K and graphene at room temperature. △ Less

Submitted 22 October, 2016; originally announced October 2016.

Comments: 8 pages, 6 figures, 1 appendix

Journal ref: Phys. Rev. B 95, 045405 (2017)

Infrared photodetectors based on graphene van der Waals heterostructures

Authors: V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the deve… ▽ More We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors. △ Less

Submitted 5 September, 2016; originally announced September 2016.

Comments: 14 pages, 7 figures

Plasmonic shock waves and solitons in a nanoring

Authors: K. L. Koshelev, V. Yu. Kachorovskii, M. Titov, M. S. Shur

Abstract: We apply the hydrodynamic theory of electron liquid to demonstrate that a circularly polarized radiation induces the diamagnetic, helicity-sensitive dc current in a ballistic nanoring. This current is dramatically enhanced in the vicinity of plasmonic resonances. The resulting magnetic moment of the nanoring represents a giant increase of the inverse Faraday effect. With increasing radiation inten… ▽ More We apply the hydrodynamic theory of electron liquid to demonstrate that a circularly polarized radiation induces the diamagnetic, helicity-sensitive dc current in a ballistic nanoring. This current is dramatically enhanced in the vicinity of plasmonic resonances. The resulting magnetic moment of the nanoring represents a giant increase of the inverse Faraday effect. With increasing radiation intensity, linear plasmonic excitations evolve into the strongly non-linear plasma shock waves. These excitations produce a series of the well resolved peaks at the THz frequencies. We demonstrate that the plasmonic wave dispersion transforms the shock waves into solitons. The predicted effects should enable multiple applications in a wide frequency range (from the microwave to terahertz band) using optically controlled ultra low loss electric, photonic and magnetic devices. △ Less

Submitted 6 January, 2017; v1 submitted 20 June, 2016; originally announced June 2016.

Comments: 13 pages, 12 figures

Journal ref: Phys. Rev. B 95, 035418 (2017)

Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions

Authors: V Ryzhii, M Ryzhii, M S Shur, V Mitin, A Satou, T Otsuji

Abstract: We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes a… ▽ More We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes and electrons. The operation of the GL-FET- and PGL-FET detectors is associated with the rectification of the ac current across the lateral p-n junction enhanced by the excitation of bound plasmonic oscillations in in the p- and n-sections of the channel. Using the developed device model, we find the GL-FET and PGL-FET-detectors characteristics. These detectors can exhibit very high voltage responsivity at the THz radiation frequencies close to the frequencies of the plasmonic resonances. These frequencies can be effectively voltage tuned. We show that in PL-FET-detectors the dominant mechanism of the current rectification is due to the tunneling nonlinearity, whereas in PGL-FET-detector the current rectification is primarily associated with the thermionic processes. Due to much lower p-n junction conductance in the PGL-FET-detectors, their resonant response can be substantially more pronounced than in the GL-FET-detectors corresponding to fairly high detector responsivity. △ Less

Submitted 17 April, 2016; originally announced April 2016.

Comments: 13 pages, 8 figures

Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, V. G. Leiman, G. Fedorov, G. N. Goltzman, I. A. Gayduchenko, N. Titova, D. Coquillat, D. But, W. Knap, V. Mitin, M. S. Shur

Abstract: We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the another contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for response of the lateral CNT netw… ▽ More We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the another contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the two-dimensional plasmons in relatively dense networks of randomly oriented CNTs (CNT "felt") and predicts the detector responsivity spectral characteristics. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. We demonstrate that the excitation of the two-dimensional plasmons by incoming THz radiation the detector responsivity can induce sharp resonant peaks of the detector responsivity at the signal frequencies corresponding to the plasmonic resonances. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures. △ Less

Submitted 17 February, 2016; originally announced February 2016.

Comments: 15 pages, 9 figures

Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling electron injection from the emitter, electron propagation across the barrier layers with the partial capture into the GB, and the self-consistent oscillations o… ▽ More We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling electron injection from the emitter, electron propagation across the barrier layers with the partial capture into the GB, and the self-consistent oscillations of the electric potential and the hole density in the GB (plasma oscillations), as well as the quantum capacitance and the electron transit-time effects. Using the proposed device model, we calculate the responsivity of GB-HETs operating as THz detectors as a function of the signal frequency, applied bias voltages, and the structural parameters. The inclusion of the plasmonic effect leads to the possibility of the HET-GBT operation at the frequencies significantly exceeding those limited by the characteristic RC-time. It is found that the responsivity of GB-HETs with a sufficiently perfect GB exhibits sharp resonant maxima in the THz range of frequencies associated with the excitation of plasma oscillations. The positions of these maxima are controlled by the applied bias voltages. The GB-HETs can compete with and even surpass other plasmonic THz detectors. △ Less

Submitted 10 September, 2015; originally announced September 2015.

Comments: 10 pages, 4 figures

Negative terahertz conductivity in remotely doped graphene bilayer heterostructures

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote doping enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore such remote… ▽ More Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote doping enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore such remote doping helps surpassing the intraband (Drude) absorption and results in large absolute values of the negative dynamic THz conductivity in a wide range of frequencies at elevated (including room) temperatures. The remotely doped GBL heterostructure THz lasers are expected to achieve higher THz gain compared to previously proposed GBL-based THz lasers. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Comments: 9 pages. 8 figures

Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors

Authors: G. Liu, S. L. Rumyantsev, C. Jiang, M. S. Shur, A. A. Balandin

Abstract: We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol, acetonitrile, toluene, chloroform and methanol. It was found that h-BN dielectric passivation layer does not prevent gas detection via changes i… ▽ More We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol, acetonitrile, toluene, chloroform and methanol. It was found that h-BN dielectric passivation layer does not prevent gas detection via changes in the source-drain current in the active MoS2 thin film channel. The use of h-BN cap layers (thickness H=10 nm) in the design of MoS2 thin film gas sensors improves device stability and prevents device degradation due to environmental and chemical exposure. The obtained results are important for applications of van der Waals materials in chemical and biological sensing. △ Less

Submitted 1 July, 2015; originally announced July 2015.

Comments: 3 pages; 4 figures

Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

Authors: S. L. Rumyantsev, C. Jiang, R. Samnakay, M. S. Shur, A. A. Balandin

Abstract: We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in "thick" MoS2 tr… ▽ More We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in "thick" MoS2 transistors is of the same level as that in graphene. The MoS2 transistors with the atomically thin channels have substantially higher noise levels. It was established that, unlike in graphene devices, the noise characteristics of MoS2 transistors with "thick" channels (15-18 atomic planes) could be described by the McWhorter model. Our results indicate that the channel thickness optimization is crucial for practical applications of MoS2 thin-film transistors. △ Less

Submitted 5 March, 2015; originally announced March 2015.

Comments: 12 pages, 3 figures

Journal ref: IEEE Electron Device Letters, 36, 517 (2015)

Negative terahertz conductivity in disordered graphene bilayers with population inversion

Authors: D. Svintsov, T. Otsuji, V. Mitin, M. S. Shur, V. Ryzhii

Abstract: The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pumping to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer struct… ▽ More The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pumping to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer structures, the indirect interband radiative transitions accompanied by scattering of carriers caused by disorder can provide a substantial negative contribution to the THz conductivity (together with the direct interband transitions). In the graphene bilayer structures on high-$κ$ substrates with point charged defects, these transitions almost fully compensate the losses due to the intraband (Drude) absorption. We also demonstrate that the indirect interband contribution to the THz conductivity in a graphene bilayer with the extended defects (such as the charged impurity clusters, surface corrugation, and nanoholes) can surpass by several times the fundamental limit associated with the direct interband transitions and the Drude conductivity. These predictions can affect the strategy of the graphene-based THz laser implementation. △ Less

Submitted 4 February, 2015; originally announced February 2015.

Comments: 5 pages, 4 figures

High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics

Authors: C. Jiang, S. L. Rumyantsev, R. Samnakay, M. S. Shur, A. A. Balandin

Abstract: The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the DC and pulse measurements shows that the DC sub - linear and super - linear output characteristics of MoS… ▽ More The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the DC and pulse measurements shows that the DC sub - linear and super - linear output characteristics of MoS2 thin - films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, an intriguing phenomenon of the "memory step" - a kink in the drain current - occurs at zero gate voltage irrespective of the threshold voltage value. The memory step effect was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The obtained results suggest new applications for MoS2 thin - film transistors in extreme - temperature electronics and sensors. △ Less

Submitted 20 December, 2014; originally announced December 2014.

Comments: 22 pages, 8 figures

Journal ref: Journal of Applied Physics, 117, 064301 (2015)

Ratchet effect enhanced by plasmons

Authors: I. V. Rozhansky, V. Yu. Kachorovskii, M. S. Shur

Abstract: Ratchet effect -- a {\it dc} current induced by the electromagnetic wave impinging on the spatially modulated two-dimensional (2D) electron liquid -- occurs when the wave amplitude is spatially modulated with the same wave vector as the 2D liquid but is shifted in phase. The analysis within the framework of the hydrodynamic model shows that the ratchet current is dramatically enhanced in the vicin… ▽ More Ratchet effect -- a {\it dc} current induced by the electromagnetic wave impinging on the spatially modulated two-dimensional (2D) electron liquid -- occurs when the wave amplitude is spatially modulated with the same wave vector as the 2D liquid but is shifted in phase. The analysis within the framework of the hydrodynamic model shows that the ratchet current is dramatically enhanced in the vicinity of the plasmonic resonances and has nontrivial polarization dependence. In particular, for circular polarization, the current component, perpendicular to the modulation direction, changes sign with the inversion of the radiation helicity. Remarkably, in the high-mobility structures, this component might be much larger than the the current component in the modulation direction. We also discuss the non-resonant regime realized in dirty systems, where the plasma resonances are suppressed, and demonstrate that the non-resonant ratchet current is controlled by the Maxwell relaxation in the 2D liquid. △ Less

Submitted 26 November, 2014; originally announced November 2014.

Comments: 6 pages, 2 figures

Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors

Authors: R. Samnakay, C. Jiang, S. L. Rumyantsev, M. S. Shur, A. A. Balandin

Abstract: We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film field-effect transistors were fabricated on Si/SiO2 substrates and intentionally aged for a month to verify reliability and achieve better current stability. T… ▽ More We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film field-effect transistors were fabricated on Si/SiO2 substrates and intentionally aged for a month to verify reliability and achieve better current stability. The same devices with the channel covered by 10 nm of Al2O3 were used as reference samples. The exposure to ethanol, acetonitrile, toluene, chloroform, and methanol vapors results in drastic changes in the source-drain current. The current can increase or decrease by more than two-orders of magnitude depending on the analyte. The reference devices with coated channel did not show any response. It was established that transient time of the current change and the normalized spectral density of the low-frequency current fluctuations can be used as additional sensing parameters for selective gas detection with thin-film MoS2 transistors. △ Less

Submitted 19 November, 2014; originally announced November 2014.

Comments: 12 pages, 5 figures

Journal ref: Applied Physics Letters, 106, 023115 (2015)

Graphene vertical cascade interband terahertz and infrared photodetectors

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, V. Ya. Aleshkin, A. A. Dubinov, D. Svintsov, V. Mitin, M. S. Shur

Abstract: We propose and evaluate the vertical cascade terahertz and infrared photodetectors based on multiple-graphene-layer (GL) structures with thin tunnel barrier layers (made of tungsten disulfide or related materials). The photodetector operation is associated with the cascaded radiative electron transitions from the valence band in GLs to the conduction band in the neighboring GLs (interband- and int… ▽ More We propose and evaluate the vertical cascade terahertz and infrared photodetectors based on multiple-graphene-layer (GL) structures with thin tunnel barrier layers (made of tungsten disulfide or related materials). The photodetector operation is associated with the cascaded radiative electron transitions from the valence band in GLs to the conduction band in the neighboring GLs (interband- and inter-GL transitions). We calculate the spectral dependences of the responsivity and detectivity for the vertical cascade interband GL- photodetectors (I-GLPDs) with different number of GLs and doping levels at different bias voltages in a wide temperature range. We show the possibility of an effective manipulation of the spectral characteristics by the applied voltage. The spectral characteristics depend also on the GL doping level that opens up the prospects of using I-GLPDs in the multi-color systems. The advantages of I-GLPDs under consideration are associated with their sensitivity to the normal incident radiation, weak temperature dependence of the dark current as well as high speed of operation. The comparison of the proposed I-GLDs with the quantum-well intersubband photodectors demonstrates the superiority of the former, including a better detectivity at room temperature and a higher speed. The vertical cascade I-GLDs can also surpass the lateral p-i-n GLDs in speed. △ Less

Submitted 2 November, 2014; originally announced November 2014.

Comments: 10 pages, 12 figures

Graphene vertical hot-electron terahertz detectors

Authors: V. Ryzhii, A. Satou, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set (such as tungsten disulfide and related materials). The operation of these detectors is enabled by the thermionic emissions from the GLs enhanced by the ele… ▽ More We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set (such as tungsten disulfide and related materials). The operation of these detectors is enabled by the thermionic emissions from the GLs enhanced by the electrons heated by incoming THz radiation. The electron heating is primarily associated with the intraband absorption (the Drude absorption). We calculate the responsivity and detectivity as functions of the photon energy, GL doping, and the applied voltage for the GL detectors (GLDs) with different number of GLs. The detectors based on the cascade multiple-GL structures can exhibit a substantial photoelectric gain resulting in the elevated responsivity and detectivity. The advantages of the THz detectors under consideration are associated with their high sensitivity to the normal incident radiation and efficient operation at room temperature at the low end of the THz frequency range. Such GLDs with a metal grating, supporting the excitation of plasma oscillations in the GL-structures by the incident THz radiation, can exhibit a strong resonant response at the frequencies of several THz (in the range, where the operation of the conventional detectors based on A$_3$B$_5$ materials, in particular THz quantum-well detectors, is hindered due to a strong optical phonon radiation absorption in such materials). △ Less

Submitted 2 September, 2014; originally announced September 2014.

Comments: 10 pages, 6 figures

Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation

Authors: D. Svintsov, V. G. Leiman, V. Ryzhii, T. Otsuji, M. S. Shur

Abstract: We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant excitation of plasma oscillations in graphene layers (GLs). The rectified component of the ponderomotive force between GLs invokes resonant mechanical swinging of t… ▽ More We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant excitation of plasma oscillations in graphene layers (GLs). The rectified component of the ponderomotive force between GLs invokes resonant mechanical swinging of top GL, resulting in the drain current oscillations. To estimate the device responsivity, we solve the hydrodynamic equations for the electrons and holes in graphene governing the plasma-wave response, and the equation describing the graphene membrane oscillations. The combined plasma-mechanical resonance raises the current amplitude by up to four orders of magnitude. The use of graphene as a material for the elastic gate and conductive channel allows the voltage tuning of both resonant frequencies in a wide range. △ Less

Submitted 9 June, 2014; originally announced June 2014.

Comments: 13 pages, 5 figures

Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors

Authors: J. Renteria, R. Samnakay, S. L. Rumyantsev, P. Goli, M. S. Shur, A. A. Balandin

Abstract: We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuatio… ▽ More We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 1.5 x 10^19 eV-1cm-3 and 2 x 10^20 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials. △ Less

Submitted 24 December, 2013; originally announced December 2013.

Comments: 18 pages; 5 figures

Journal ref: Appl. Phys. Lett., 104, 153104 (2014)

Dynamic effects in double graphene-layer structures with inter-layer resonant-tunneling negative conductivity

Authors: V. Ryzhii, A. Satou, T. Otsuji, M. Ryzhii, V. Mitin, M S Shur

Abstract: We study the dynamic effects in the double graphene-layer (GL) structures with the resonant-tunneling (RT) and the negative differential inter-GL conductivity. Using the developed model, which accounts for the excitation of self-consistent oscillations of the electron and hole densities and the ac electric field between GLs (plasma oscillations), we calculate the admittance of the double-GL RT s… ▽ More We study the dynamic effects in the double graphene-layer (GL) structures with the resonant-tunneling (RT) and the negative differential inter-GL conductivity. Using the developed model, which accounts for the excitation of self-consistent oscillations of the electron and hole densities and the ac electric field between GLs (plasma oscillations), we calculate the admittance of the double-GL RT structures as a function of the signal frequency and applied voltages, and the spectrum and increment/decrement of plasma oscillations. Our results show that the electron-hole plasma in the double-GL RT structures with realistic parameters is stable with respect to the self-excitation of plasma oscillations and aperiodic perturbations. The stability of the electron-hole plasma at the bias voltages corresponding to the inter-GL RT and strong nonlinearity of the RT current-voltage characteristics enable using the double-GL RT structures for detection of teraherz (THz) radiation. The excitation of plasma oscillations by the incoming THz radiation can result in a sharp resonant dependence of detector responsivity on radiation frequency and the bias voltage. Due to a strong nonlinearity of the current-voltage characteristics of the double-GL structures at RT and the resonant excitation of plasma oscillations, the maximum responsivity, $R_V^{max}$, can markedly exceed the values $(10^4 - 10^5)$~V/W at room temperature. △ Less

Submitted 16 May, 2013; originally announced May 2013.

Comments: 7 pages, 4 figures

Teraherz photomixing using plasma resonances in double-graphene layer structures

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, A. Satou, T. Otsuji

Abstract: We propose the concept of terahertz (THz) photomixing enabled by the interband electron transitions due to the absorption of modulated optical radiation in double-graphene layer (double-GL) structures and the resonant excitation of plasma oscillations. Using the developed double-GL photomixer (DG-PM) model, we describe its operation and calculate the device characteristics. The output power of the… ▽ More We propose the concept of terahertz (THz) photomixing enabled by the interband electron transitions due to the absorption of modulated optical radiation in double-graphene layer (double-GL) structures and the resonant excitation of plasma oscillations. Using the developed double-GL photomixer (DG-PM) model, we describe its operation and calculate the device characteristics. The output power of the THz radiation exhibits sharp resonant peaks at the plasmonic resonant frequencies. The peak powers markedly exceed the output powers at relatively low frequencies. Due to relatively high quantum efficiency of optical absorption in GLs and short inter-GL transit time, the proposed DG-PM operating in the resonant plasma oscillation regime can surpass the photomixers based on the standard heterostructures . △ Less

Submitted 2 May, 2013; v1 submitted 4 April, 2013; originally announced April 2013.

Comments: This paper has ben withdrawn by the author due to misprints and necessity of amendments

Reduction of 1/f Noise in Graphene after Electron-Beam Irradiation

Authors: Md. Zahid Hossain, Sergey Rumyantsev, Michael S. Shur, Alexander A. Balandin

Abstract: We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic - it reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The… ▽ More We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic - it reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S(I)/I^2 (I is the source-drain current) by an order-of magnitude at the radiation dose of 104 micro-C/cm^2. Our theoretical considerations suggest that the observed noise reduction after irradiation can be more readily explained if the mechanism of 1/f noise in graphene is related to the electron-mobility fluctuations. The obtained results are important for the proposed graphene applications in analog, mixed-signal and radio-frequency systems, integrated circuit interconnects and sensors. △ Less

Submitted 21 November, 2012; originally announced November 2012.

Journal ref: Applied Physics Letters, 102, 153512 (2013)