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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2104.04666 (cond-mat)
[Submitted on 10 Apr 2021 (v1), last revised 14 Jul 2021 (this version, v2)]

Title:S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons

Authors:V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji
View a PDF of the paper titled S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons, by V. Ryzhii and 4 other authors
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Abstract:We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium electrons due the violation of the Galilean and Lorentz invariance in the systems with a linear electron dispersion. This effect can result in the S-shaped current-voltage characteristics (IVs). The resulting negative differential conductivity enables the hysteresis effects and current filamentation that can be used for the implementation of voltage switching devices. Due to a strong nonlinearity of the IVs, the G-FETs can be used for an effective frequency multiplication and detection of terahertz radiation.
Comments: 11 pages, 6 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:2104.04666 [cond-mat.mes-hall]
  (or arXiv:2104.04666v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2104.04666
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. Applied 16, 014001 (2021)
Related DOI: https://doi.org/10.1103/PhysRevApplied.16.014001
DOI(s) linking to related resources

Submission history

From: V. Ryzhii [view email]
[v1] Sat, 10 Apr 2021 02:32:18 UTC (289 KB)
[v2] Wed, 14 Jul 2021 01:26:01 UTC (279 KB)
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