Showing 1–50 of 83 results for author: Shabani, J

Gate-tunable polarity inversions and three-fold rotation symmetry of the superconducting diode effect

Authors: William F. Schiela, Melissa Mikalsen, Daniel Crawford, Stefan Ilić, William M. Strickland, F. Sebastian Bergeret, Javad Shabani

Abstract: The superconducting diode effect is an asymmetry in the critical current with respect to the supercurrent polarity. One impetus driving recent interest in the effect is its dependence on intrinsic or microscopic symmetry breaking mechanisms. Here, we study the superconducting diode effect in gated planar Josephson junctions fabricated on a superconductor--semiconductor heterostructure under an i… ▽ More The superconducting diode effect is an asymmetry in the critical current with respect to the supercurrent polarity. One impetus driving recent interest in the effect is its dependence on intrinsic or microscopic symmetry breaking mechanisms. Here, we study the superconducting diode effect in gated planar Josephson junctions fabricated on a superconductor--semiconductor heterostructure under an in-plane magnetic field. We observe two gate-driven inversions of the diode polarity in the vicinity of zero field, as well as a third-harmonic component in the dependence of the diode efficiency on the in-plane field angle. We analyze the Lifshitz invariant for an arbitrary spin--orbit coupling and show that multiple polarity inversions are possible in the presence of both linear and cubic Dresselhaus terms, where the Rashba parameter varies monotonically with gate voltage. Numerical calculations of the diode efficiency further reveal the presence of higher harmonics in its field-angle dependence in the presence of spin--orbit coupling. △ Less

Submitted 30 April, 2025; originally announced April 2025.

Planar Josephson junction devices with narrow superconducting strips: Topological properties and optimization

Authors: Purna P. Paudel, Javad Shabani, Tudor D. Stanescu

Abstract: We study the low-energy physics of planar Josephson junction structures realized in a quasi-two dimensional semiconductor system proximity-coupled to narrow superconducting films. Using both a recursive Green's function approach and an effective Hamiltonian approximation, we investigate the topological superconducting phase predicted to emerge in this type of system. We first characterize the effe… ▽ More We study the low-energy physics of planar Josephson junction structures realized in a quasi-two dimensional semiconductor system proximity-coupled to narrow superconducting films. Using both a recursive Green's function approach and an effective Hamiltonian approximation, we investigate the topological superconducting phase predicted to emerge in this type of system. We first characterize the effects associated with varying the electrostatic potentials applied within the unproximitized semiconductor regions. We then address the problem of optimizing the width of the superconductor films and identifying the optimal regimes characterized by large topological gap values. We find that structures with narrow superconducting films of widths ranging between about $100~$nm and $200~$nm can support topological superconducting phases with gaps up to $40\%$ of the parent superconducting gap, significantly larger than those characterizing the corresponding wide-superconductor structures. This work represents the first component of a proposed comprehensive strategy to address this optimization problem in planar Josephson junction structures and realize robust topological devices. △ Less

Submitted 15 June, 2025; v1 submitted 6 April, 2025; originally announced April 2025.

Comments: 22 pages, 27 figures

Strongly-anharmonic gateless gatemon qubits based on InAs/Al 2D heterostructure

Authors: Shukai Liu, Arunav Bordoloi, Jacob Issokson, Ido Levy, Maxim G. Vavilov, Javad Shabani, Vladimir Manucharyan

Abstract: The gatemon qubits, made of transparent super-semi Josephson junctions, typically have even weaker anharmonicity than the opaque AlOx-junction transmons. However, flux-frustrated gatemons can acquire a much stronger anharmonicity, originating from the interference of the higher-order harmonics of the supercurrent. Here we investigate this effect of enhanced anharmonicity in split-junction gatemon… ▽ More The gatemon qubits, made of transparent super-semi Josephson junctions, typically have even weaker anharmonicity than the opaque AlOx-junction transmons. However, flux-frustrated gatemons can acquire a much stronger anharmonicity, originating from the interference of the higher-order harmonics of the supercurrent. Here we investigate this effect of enhanced anharmonicity in split-junction gatemon devices based on InAs/Al 2D heterostructure. We find that anharmonicity in excess of 100% can be routinely achieved at the half-integer flux sweet-spot without any need for electrical gating or excessive sensitivity to the offset charge noise. We verified that such "gateless gatemon" qubits can be driven with Rabi frequencies more than 100 MHz, enabling gate operations much faster than what is possible with traditional gatemons and transmons. Furthermore, by analyzing a relatively high-resolution spectroscopy of the device transitions as a function of flux, we were able to extract fine details of the current-phase relation, to which transport measurements would hardly be sensitive. The strong anharmonicity of our gateless gatemons, along with their bare-bones design, can prove to be a precious resource that transparent super-semi junctions bring to quantum information processing. △ Less

Submitted 15 March, 2025; originally announced March 2025.

Geometric dependence of critical current magnitude and nonreciprocity in planar Josephson junctions

Authors: William F. Schiela, Melissa Mikalsen, William M. Strickland, Javad Shabani

Abstract: Planar Josephson junctions in a magnetic field exhibit the superconducting diode effect, by which the critical current magnitude depends on the polarity of the transport current. A number of different mechanisms for the effect have been proposed.Here, we study symmetric, T-shaped planar Josephson junctions with semiconducting weak links in an in-plane magnetic field perpendicular to an applied cur… ▽ More Planar Josephson junctions in a magnetic field exhibit the superconducting diode effect, by which the critical current magnitude depends on the polarity of the transport current. A number of different mechanisms for the effect have been proposed.Here, we study symmetric, T-shaped planar Josephson junctions with semiconducting weak links in an in-plane magnetic field perpendicular to an applied current bias. In particular, we vary the longitudinal width (i.e.\ parallel to the current) of the superconducting contacts and the voltage of an electrostatic gate. We observe an increase in both critical current and diode efficiency with increasing contact width and relate the critical current behavior to the induced coherence length of the Andreev bound states that mediate the supercurrent flow through the junction. We further observe a linear trend, with respect to inverse contact width, of the field at which the diode efficiency is maximized, which saturates as the contact width becomes large compared to the coherence length. The smaller field at which the critical current is maximized additionally exhibits a strong gate dependence. We interpret these observations in the context of multiple underlying mechanisms, including spin--orbit coupling and orbital effects. △ Less

Submitted 17 February, 2025; originally announced February 2025.

Coherent Superconductor-Semiconductor Epitaxy for Integrated Quantum Electronics

Authors: Julian A. Steele, Patrick J. Strohbeen, Carla Verdi, Ardeshir Baktash, Alisa Danilenko, Yi-Hsun Chen, Jechiel van Dijk, Lianzhou Wang, Eugene Demler, Salva Salmani-Rezaie, Peter Jacobson, Javad Shabani

Abstract: Introducing superconductivity into group IV elements by doping has long promised a pathway to introduce quantum functionalities into well-established semiconductor technologies. The non-equilibrium hyperdoping of group III atoms into Si or Ge has successfully shown superconductivity can be achieved, however, the origin of superconductivity has been obscured by structural disorder and dopant cluste… ▽ More Introducing superconductivity into group IV elements by doping has long promised a pathway to introduce quantum functionalities into well-established semiconductor technologies. The non-equilibrium hyperdoping of group III atoms into Si or Ge has successfully shown superconductivity can be achieved, however, the origin of superconductivity has been obscured by structural disorder and dopant clustering. Here, we report the epitaxial growth of hyperdoped Ga:Ge films by molecular beam epitaxy with extreme hole concentrations ($n_\textup{h} = 4.15 \times 10^{21}$~cm$^{-3}$, ~17.9\% Ga substitution) that yield superconductivity with a critical temperature of $T_{\textup{c}} = 3.5$~K and an out-of-plane critical field of 1~T at 270~mK. Synchrotron-based X-ray absorption and scattering methods reveal that Ga dopants are substitutionally incorporated within the Ge lattice, introducing a tetragonal distortion to the crystal unit cell. Our findings, corroborated by first-principles calculations, suggest that the structural order of Ga dopants creates a narrow band for the emergence of superconductivity in Ge, establishing hyperdoped Ga:Ge as a low-disorder, epitaxial superconductor-semiconductor platform. △ Less

Submitted 17 February, 2025; v1 submitted 19 December, 2024; originally announced December 2024.

Machine learning analysis of structural data to predict electronic properties in near-surface InAs quantum wells

Authors: Patrick J. Strohbeen, Abtin Abbaspour, Amara Keita, Tarek Nabih, Aliona Lejuste, Alisa Danilenko, Ido Levy, Jacob Issokson, Tyler Cowan, William M. Strickland, Mehdi Hatefipour, Ashley Argueta, Lukas Baker, Melissa Mikalsen, Javad Shabani

Abstract: Semiconductor crosshatch patterns in thin film heterostructures form as a result of strain relaxation processes and dislocation pile-ups during growth of lattice mismatched materials. Due to their connection with the internal misfit dislocation network, these crosshatch patterns are a complex fingerprint of internal strain relaxation and growth anisotropy. Therefore, this mesoscopic fingerprint no… ▽ More Semiconductor crosshatch patterns in thin film heterostructures form as a result of strain relaxation processes and dislocation pile-ups during growth of lattice mismatched materials. Due to their connection with the internal misfit dislocation network, these crosshatch patterns are a complex fingerprint of internal strain relaxation and growth anisotropy. Therefore, this mesoscopic fingerprint not only describes the residual strain state of a near-surface quantum well, but also could provide an indicator of the quality of electron transport through the material. Here, we present a method utilizing computer vision and machine learning to analyze AFM crosshatch patterns that exhibits this correlation. Our analysis reveals optimized electron transport for moderate values of $λ$ (crosshatch wavelength) and $ε$ (crosshatch height), roughly 1 $μ$m and 4 nm, respectively, that define the average waveform of the pattern. Simulated 2D AFM crosshatch patterns are used to train a machine learning model to correlate the crosshatch patterns to dislocation density. Furthermore, this model is used to evaluate the experimental AFM images and predict a dislocation density based on the crosshatch waveform. Predicted dislocation density, experimental AFM crosshatch data, and experimental transport characterization are used to train a final model to predict 2D electron gas mean free path. This model shows electron scattering is strongly correlated with elastic effects (e.g. dislocation scattering) below 200 nm $λ_{MFP}$. △ Less

Submitted 12 October, 2024; v1 submitted 25 September, 2024; originally announced September 2024.

Microwave radiation at criticality in a hybrid Josephson array

Authors: Kristen W. Léonard, Anton V. Bubis, Melissa Mikalsen, William F. Schiela, Bassel H. Elfeky, William M. Strickland, Duc Phan, Javad Shabani, Andrew P. Higginbotham

Abstract: Anomalous metallic behavior is often observed near superconductor-insulator quantum critical points and, if persistent to zero temperature, poses a challenge to current theories of metals. One explanation for this behavior could be incomplete thermal equilibrium between the sample and the cryostat. However, despite decades of study, the temperature of an anomalous metal has not yet been measured.… ▽ More Anomalous metallic behavior is often observed near superconductor-insulator quantum critical points and, if persistent to zero temperature, poses a challenge to current theories of metals. One explanation for this behavior could be incomplete thermal equilibrium between the sample and the cryostat. However, despite decades of study, the temperature of an anomalous metal has not yet been measured. We introduce a new experimental probe by capturing microwave radiation emitted from the anomalous metal, using a two-dimensional array of superconductor-semiconductor hybrid Josephson junctions as a model system. The total emitted radiation exceeds the limits of thermodynamic equilibrium, and is well described by an elevated sample temperature. The extracted sample temperature matches the onset of anomalous metallic behavior. Additionally, we discover scaling behavior of radiative noise in the presence of an applied bias. Elements of our noise-scaling observations were predicted based on nonlinear critical field theories and gauge-gravity duality between current noise and Hawking radiation from a black hole. This work shows that, in a prominent model system, anomalous metallic behavior is a non-equilibrium effect, and opens a new frontier in the study of universal, non-equilibrium phenomena near quantum criticality. △ Less

Submitted 15 October, 2024; v1 submitted 15 September, 2024; originally announced September 2024.

Comments: 7+8 pages, 4+11 figures

Progress in superconductor-semiconductor topological Josephson junctions

Authors: William F. Schiela, Peng Yu, Javad Shabani

Abstract: Majorana bound states (MBSs) are quasiparticles which are their own antiparticles. They are predicted to emerge as zero-energy modes localized at the boundary of a topological superconductor. No intrinsic topological superconductor is known to date. However, by interfacing conventional superconductors and semiconductors with strong spin--orbit coupling it is possible to create a system hosting top… ▽ More Majorana bound states (MBSs) are quasiparticles which are their own antiparticles. They are predicted to emerge as zero-energy modes localized at the boundary of a topological superconductor. No intrinsic topological superconductor is known to date. However, by interfacing conventional superconductors and semiconductors with strong spin--orbit coupling it is possible to create a system hosting topological states. Hence epitaxial superconductors and semiconductors have emerged as an attractive materials system with atomically sharp interfaces and broad flexibility in device fabrications incorporating Josephson junctions. We discuss the basics of topological superconductivity and provide insight on how to go beyond current state-of-the-art experiments. We argue that the ultimate success in realizing MBS physics requires the observation of non-Abelian braiding and fusion experiments. △ Less

Submitted 22 August, 2024; originally announced August 2024.

Journal ref: PRX Quantum 5, 030102 (2024)

Microwave Andreev bound state spectroscopy in a semiconductor-based Planar Josephson junction

Authors: Bassel Heiba Elfeky, Krishna Dindial, David S. Brandão, Barış Pekerten, Jaewoo Lee, William M. Strickland, Patrick J. Strohbeen, Alisa Danilenko, Lukas Baker, Melissa Mikalsen, William Schiela, Zixuan Liang, Jacob Issokson, Ido Levy, Igor Zutic, Javad Shabani

Abstract: By coupling a semiconductor-based planar Josephson junction to a superconducting resonator, we investigate the Andreev bound states in the junction using dispersive readout techniques. Using electrostatic gating to create a narrow constriction in the junction, our measurements unveil a strong coupling interaction between the resonator and the Andreev bound states. This enables the mapping of isola… ▽ More By coupling a semiconductor-based planar Josephson junction to a superconducting resonator, we investigate the Andreev bound states in the junction using dispersive readout techniques. Using electrostatic gating to create a narrow constriction in the junction, our measurements unveil a strong coupling interaction between the resonator and the Andreev bound states. This enables the mapping of isolated tunable Andreev bound states, with an observed transparency of up to 99.94\% along with an average induced superconducting gap of $\sim 150 μ$eV. Exploring the gate parameter space further elucidates a non-monotonic evolution of multiple Andreev bound states with varying gate voltage. Complimentary tight-binding calculations of an Al-InAs planar Josephson junction with strong Rashba spin-orbit coupling provide insight into possible mechanisms responsible for such behavior. Our findings highlight the subtleties of the Andreev spectrum of Josephson junctions fabricated on superconductor-semiconductor heterostructures and offering potential applications in probing topological states in these hybrid platforms. △ Less

Submitted 15 August, 2024; originally announced August 2024.

Microwave Signatures of Topological Superconductivity in Planar Josephson Junctions

Authors: Barış Pekerten, David Brandão, Bassel Heiba Elfeky, Tong Zhou, Jong E. Han, Javad Shabani, Igor Žutić

Abstract: Planar Josephson junctions provide a platform to host topological superconductivity which, through manipulating Majorana bound states (MBS), could enable fault-tolerant quantum computing. However, what constitutes experimental signatures of topological superconductivity and how MBS can be detected remains strongly debated. In addition to spurious effects that mimic MBS, there is a challenge to dis… ▽ More Planar Josephson junctions provide a platform to host topological superconductivity which, through manipulating Majorana bound states (MBS), could enable fault-tolerant quantum computing. However, what constitutes experimental signatures of topological superconductivity and how MBS can be detected remains strongly debated. In addition to spurious effects that mimic MBS, there is a challenge to discern the inherent topological signals in realistic systems with many topologically-trivial Andreev bound states, determining the transport properties of Josephson junctions. Guided by the advances in microwave spectroscopy, we theoretically study Al/InAs-based planar Josephson junction embedded into a radio-frequency superconducting quantum interference device to identify microwave signatures of topological superconductivity. Remarkably, by exploring the closing and reopening of a topological gap, we show that even in a wide planar Josephson junction with many Andreev bound states, such a topological signature is distinguishable in the resonance frequency shift of a microwave drive and the ``half-slope'' feature of the microwave absorption spectrum. Our findings provide an important step towards experimental detection of non-Abelian statistics and implementing scalable topological quantum computing. △ Less

Submitted 19 August, 2024; v1 submitted 23 July, 2024; originally announced July 2024.

Journal ref: Phys. Rev. B 110, L060513 (2024)

Gatemonium: A Voltage-Tunable Fluxonium

Authors: William M. Strickland, Bassel Heiba Elfeky, Lukas Baker, Andrea Maiani, Jaewoo Lee, Ido Levy, Jacob Issokson, Andrei Vrajitoarea, Javad Shabani

Abstract: We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One a… ▽ More We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time domain characterization of the plasmon modes in a second gatemonium device with different charging energy and JJ array inductance. We discuss future directions for this platform in gate voltage-tunable, high plasma frequency, enhanced impedance junction arrays, and enhanced coherence times for voltage tunable architectures. △ Less

Submitted 10 January, 2025; v1 submitted 13 June, 2024; originally announced June 2024.

Beyond the standard model of topological Josephson junctions: From crystalline anisotropy to finite-size and diode effects

Authors: Barış Pekerten, David Brandão, Bailey Bussiere, David Monroe, Tong Zhou, Jong E. Han, Javad Shabani, Alex Matos-Abiague, Igor Žutić

Abstract: A planar Josephson junction is a versatile platform to realize topological superconductivity over a large parameter space and host Majorana bound states. With a change in Zeeman field, this system undergoes a transition from trivial to topological superconductivity accompanied by a jump in the superconducting phase difference between the two superconductors. A standard model of these Josephson jun… ▽ More A planar Josephson junction is a versatile platform to realize topological superconductivity over a large parameter space and host Majorana bound states. With a change in Zeeman field, this system undergoes a transition from trivial to topological superconductivity accompanied by a jump in the superconducting phase difference between the two superconductors. A standard model of these Josephson junctions, which can be fabricated to have a nearly perfect interfacial transparency, predicts a simple universal behavior. In that model, at the same value of Zeeman field for the topological transition, there is a $π$ phase jump and a minimum in the critical superconducting current, while applying a controllable phase difference yields a diamond-shaped topological region as a function of that phase difference and a Zeeman field. In contrast, even for a perfect interfacial transparency, we find a much richer and nonuniversal behavior as the width of the superconductor is varied or the Dresselhaus spin-orbit coupling is considered. The Zeeman field for the phase jump, not necessarily $π$, is different from the value for the minimum critical current, while there is a strong deviation from the diamond-like topological region. These Josephson junctions show a striking example of a nonreciprocal transport and superconducting diode effect, revealing the importance of our findings not only for topological superconductivity and fault-tolerant quantum computing, but also for superconducting spintronics. △ Less

Submitted 9 June, 2024; originally announced June 2024.

Comments: Invited to APL Special Topic Issue: "Josephson Junctions and Related Proximity Effects: From Basic Science to Emerging Applications in Advanced Technologies", accepted version

Journal ref: Applied Physics Letters 124, 252602 (2024)

Gate tunable enhancement of supercurrent in hybrid planar Josephson junctions

Authors: Peng Yu, Han Fu, William F. Schiela, William Strickland, Bassel Heiba Elfeky, S. M. Farzaneh, Jacob Issokson, Enrico Rossi, Javad Shabani

Abstract: Planar Josephson junctions (JJs) have emerged as a promising platform for the realization of topological superconductivity and Majorana zero modes. To obtain robust quasi one-dimensional (1D) topological superconducting states using planar JJs, limiting the number of 1D Andreev bound states' subbands that can be present, and increasing the size of the topological superconducting gap, are two funda… ▽ More Planar Josephson junctions (JJs) have emerged as a promising platform for the realization of topological superconductivity and Majorana zero modes. To obtain robust quasi one-dimensional (1D) topological superconducting states using planar JJs, limiting the number of 1D Andreev bound states' subbands that can be present, and increasing the size of the topological superconducting gap, are two fundamental challenges. It has been suggested that both problems can be addressed by properly designing the interfaces between the JJ's normal region and the superconducting leads. We fabricated Josephson junctions with periodic hole structures on the superconducting contact leads on InAs heterostructures with epitaxial superconducting Al. By depleting the chemical potential inside the hole region with a top gate, we observed an enhancement of the supercurrent across the junction. Such an enhancement is reproduced in theoretical simulations. The theoretical analysis shows that the enhancement of the JJ's critical current is achieved when the hole depletion is such to optimize the matching of quasiparticles' wave-function at the normal/superconductor interface. These results show how the combination of carefully designed patterns for the Al coverage, and external gates, can be successfully used to tune the density and wave functions' profiles in the normal region of the JJ, and therefore open a new avenue to tune some of the critical properties, such as number of subbands and size of the topological gap, that must be optimized to obtain robust quasi 1D superconducting states supporting Majorana bound states. △ Less

Submitted 15 April, 2025; v1 submitted 15 April, 2024; originally announced April 2024.

Kerr nonlinearity and parametric amplification with an Al-InAs superconductor-semiconductor Josephson junction

Authors: Z. Hao, T. Shaw, M. Hatefipour, W. M. Strickland, B. H. Elfeky, D. Langone, J. Shabani, S. Shankar

Abstract: Nearly quantum limited Josephson parametric amplifiers (JPAs) are essential components in superconducting quantum circuits. However, higher order nonlinearities of the Josephson cosine potential are known to cause gain compression, therefore limiting scalability. In an effort to reduce the fourth order, or Kerr nonlinearity, we realize a parametric amplifier with an Al-InAs superconductor-semicond… ▽ More Nearly quantum limited Josephson parametric amplifiers (JPAs) are essential components in superconducting quantum circuits. However, higher order nonlinearities of the Josephson cosine potential are known to cause gain compression, therefore limiting scalability. In an effort to reduce the fourth order, or Kerr nonlinearity, we realize a parametric amplifier with an Al-InAs superconductor-semiconductor hybrid Josephson junction (JJ). We extract the Kerr nonlinearity of the Al-InAs JJ from two different devices and show that it is three orders of magnitude lower compared to an Al-$\text{AlO}_\text{X}$ junction with identical Josephson inductance. We then demonstrate a four-wave-mixing (4WM) parametric amplifier made with an Al-InAs junction that achieves more than 20 dB of gain and -119 dBm of compression power, that outperforms single resonant JPAs based on Al junctions. △ Less

Submitted 16 August, 2024; v1 submitted 16 February, 2024; originally announced February 2024.

Comments: 7 pages, 5 figures, v3 - final submission version, added data repository DOI

Journal ref: Appl. Phys. Lett. 124, 254003 (2024)

Molecular beam epitaxy growth of superconducting tantalum germanide

Authors: Patrick J. Strohbeen, Tathagata Banerjee, Aurelia M. Brook, Ido Levy, Wendy L. Sarney, Jechiel van Dijk, Hayden Orth, Melissa Mikalsen, Valla Fatemi, Javad Shabani

Abstract: Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on tantalum superconducting qubits that show improvements over the Nb and Al counterparts, exploring Ta as an alternative superconductor in hybrid material systems is… ▽ More Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on tantalum superconducting qubits that show improvements over the Nb and Al counterparts, exploring Ta as an alternative superconductor in hybrid material systems is promising. Here, we study the growth of Ta on semiconducting Ge (001) substrates grown via molecular beam epitaxy. We show that at a growth temperature of 400$^{\circ}$C the Ta diffuses into the Ge matrix in a self-limiting nature resulting in smooth and abrupt surfaces and interfaces with roughness on the order of 3-7 Å as measured by atomic force microscopy and x-ray reflectivity. The films are found to be a mixture of Ta$_{5}$Ge$_{3}$ and TaGe$_{2}$ binary alloys and form a native oxide that seems to form a sharp interface with the underlying film. These films are superconducting with a $T_{C}\sim 1.8-2$K and $H_{C}^{\perp} \sim 1.88T$, $H_{C}^{\parallel} \sim 5.1T$. These results show this tantalum germanide film to be promising for future superconducting quantum information platforms. △ Less

Submitted 1 December, 2024; v1 submitted 2 December, 2023; originally announced December 2023.

Journal ref: Appl. Phys. Lett. 124, 092102 (2024)

Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits

Authors: William M. Strickland, Lukas J. Baker, Jaewoo Lee, Krishna Dindial, Bassel Heiba Elfeky, Patrick J. Strohbeen, Mehdi Hatefipour, Peng Yu, Ido Levy, Jacob Issokson, Vladimir E. Manucharyan, Javad Shabani

Abstract: The tunnelling of cooper pairs across a Josephson junction (JJ) allow for the nonlinear inductance necessary to construct superconducting qubits, amplifiers, and various other quantum circuits. An alternative approach using hybrid superconductor-semiconductor JJs can enable superconducting qubit architectures with all electric control. Here we present continuous-wave and time-domain characterizati… ▽ More The tunnelling of cooper pairs across a Josephson junction (JJ) allow for the nonlinear inductance necessary to construct superconducting qubits, amplifiers, and various other quantum circuits. An alternative approach using hybrid superconductor-semiconductor JJs can enable superconducting qubit architectures with all electric control. Here we present continuous-wave and time-domain characterization of gatemon qubits and coplanar waveguide resonators based on an InAs two-dimensional electron gas. We show that the qubit undergoes a vacuum Rabi splitting with a readout cavity and we drive coherent Rabi oscillations between the qubit ground and first excited states. We measure qubit relaxation times to be $T_1 =$ 100 ns over a 1.5 GHz tunable band. We detail the loss mechanisms present in these materials through a systematic study of the quality factors of coplanar waveguide resonators. While various loss mechanisms are present in III-V gatemon circuits we detail future directions in enhancing the relaxation times of qubit devices on this platform. △ Less

Submitted 20 February, 2024; v1 submitted 29 September, 2023; originally announced September 2023.

Journal ref: Phys. Rev. Research 6, 023094 (2024)

Andreev reflection of quantum Hall states through a quantum point contact

Authors: Mehdi Hatefipour, Joseph J. Cuozzo, Ido Levy, William M. Strickland, Dylan Langone, Enrico Rossi, Javad Shabani

Abstract: We investigate the interplay between the quantum Hall (QH) effect and superconductivity in InAs surface quantum well (SQW)/NbTiN heterostructures using a quantum point contact (QPC). We use QPC to control the proximity of the edge states to the superconductor. By measuring the upstream and downstream resistances of the device, we investigate the efficiency of Andreev conversion at the InAs/NbTiN i… ▽ More We investigate the interplay between the quantum Hall (QH) effect and superconductivity in InAs surface quantum well (SQW)/NbTiN heterostructures using a quantum point contact (QPC). We use QPC to control the proximity of the edge states to the superconductor. By measuring the upstream and downstream resistances of the device, we investigate the efficiency of Andreev conversion at the InAs/NbTiN interface. Our experimental data is analyzed using the Landauer-Buttiker formalism, generalized to allow for Andreev reflection processes. We show that by varying the voltage of the QPC, $V_{QPC}$, the average Andreev reflection, $A$, at the QH-SC interface can be tuned from 50% to 10%. The evolution of $A$ with $V_{QPC}$ extracted from the measurements exhibits plateaus separated by regions for which $A$ varies continuously with $V_{QPC}$. The presence of plateaus suggests that for some ranges of $V_{QPC}$ the QPC might be pinching off almost completely from the QH-SC interface some of the edge modes. Our work shows a new experimental setup to control and advance the understanding of the complex interplay between superconductivity and QH effect in two-dimensional electron gas systems. △ Less

Submitted 20 September, 2023; v1 submitted 4 September, 2023; originally announced September 2023.

Journal ref: Phys. Rev. B 109, 035430 (2024)

Superconductivity in hyperdoped Ge by molecular beam epitaxy

Authors: Patrick J. Strohbeen, Aurelia M. Brook, Wendy L. Sarney, Javad Shabani

Abstract: Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion implantation. The thin film growths would be advantageous allowing homoepitaxy of doped and undoped Ge films opening possibilities for vertical Josephson junctions. Here… ▽ More Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion implantation. The thin film growths would be advantageous allowing homoepitaxy of doped and undoped Ge films opening possibilities for vertical Josephson junctions. Here, we present our studies on the growth of one layer of hyperdoped superconducting germanium thin film via molecular beam epitaxy. We observe a fragile superconducting phase which is extremely sensitive to processing conditions and can easily phase-segregate, forming a percolated network of pure gallium metal. By suppressing phase segregation through temperature control we find a superconducting phase that is unique and appears coherent to the underlying Ge substrate. △ Less

Submitted 4 September, 2023; v1 submitted 8 May, 2023; originally announced May 2023.

Journal ref: AIP Advances 13, 085118 (2023)

Voltage Activated Parametric Entangling Gates on Gatemons

Authors: Yinqi Chen, Konstantin N. Nesterov, Hugh Churchill, Javad Shabani, Vladimir E. Manucharyan, Maxim G. Vavilov

Abstract: We describe the generation of entangling gates on superconductor-semiconductor hybrid qubits by ac voltage modulation of the Josephson energy. Our numerical simulations demonstrate that the unitary error can be below $10^{-5}$ in a variety of 75-ns-long two-qubit gates (CZ, $i$SWAP, and $\sqrt{i\mathrm{SWAP}}$) implemented using parametric resonance. We analyze the conditional ZZ phase and demonst… ▽ More We describe the generation of entangling gates on superconductor-semiconductor hybrid qubits by ac voltage modulation of the Josephson energy. Our numerical simulations demonstrate that the unitary error can be below $10^{-5}$ in a variety of 75-ns-long two-qubit gates (CZ, $i$SWAP, and $\sqrt{i\mathrm{SWAP}}$) implemented using parametric resonance. We analyze the conditional ZZ phase and demonstrate that the CZ gate needs no further phase correction steps, while the ZZ phase error in SWAP-type gates can be compensated by choosing pulse parameters. With decoherence considered, we estimate that qubit relaxation time needs to exceed $70μ\mathrm{s}$ to achieve the 99.9% fidelity threshold. △ Less

Submitted 17 April, 2023; originally announced April 2023.

Comments: 15 pages, 10 figures

Microwave-Tunable Diode Effect in Asymmetric SQUIDs with Topological Josephson Junctions

Authors: Joseph J. Cuozzo, Wei Pan, Javad Shabani, Enrico Rossi

Abstract: In superconducting systems in which inversion and time-reversal symmetry are simultaneously broken the critical current for positive and negative current bias can be different. For superconducting systems formed by Josephson junctions (JJs) this effect is termed Josephson diode effect. In this work, we study the Josephson diode effect for a superconducting quantum interference device (SQUID) forme… ▽ More In superconducting systems in which inversion and time-reversal symmetry are simultaneously broken the critical current for positive and negative current bias can be different. For superconducting systems formed by Josephson junctions (JJs) this effect is termed Josephson diode effect. In this work, we study the Josephson diode effect for a superconducting quantum interference device (SQUID) formed by a topological JJ with a 4$π$-periodic current-phase relationship and a topologically trivial JJ. We show how the fractional Josephson effect manifests in the Josephson diode effect with the application of a magnetic field and how tuning properties of the trivial SQUID arm can lead to diode polarity switching. We then investigate the AC response and show that the polarity of the diode effect can be tuned by varying the AC power and discuss differences between the AC diode effect of asymmetric SQUIDs with no topological JJ and SQUIDs in which one JJ is topological. △ Less

Submitted 4 September, 2024; v1 submitted 29 March, 2023; originally announced March 2023.

Comments: 13 pages, 8 figures

Quasiparticle dynamics in epitaxial Al-InAs planar Josephson junctions

Authors: Bassel Heiba Elfeky, William M. Strickland, Jaewoo Lee, James T. Farmer, Sadman Shanto, Azarin Zarassi, Dylan Langone, Maxim G. Vavilov, Eli M. Levenson-Falk, Javad Shabani

Abstract: Quasiparticle (QP) effects play a significant role in the coherence and fidelity of superconducting quantum circuits. The Andreev bound states of high transparency Josephson junctions can act as low-energy traps for QPs, providing a mechanism for studying the dynamics and properties of both the QPs and the junction. We study the trapping and clearing of QPs from the Andreev bound states of epitaxi… ▽ More Quasiparticle (QP) effects play a significant role in the coherence and fidelity of superconducting quantum circuits. The Andreev bound states of high transparency Josephson junctions can act as low-energy traps for QPs, providing a mechanism for studying the dynamics and properties of both the QPs and the junction. We study the trapping and clearing of QPs from the Andreev bound states of epitaxial Al-InAs Josephson junctions incorporated in a superconducting quantum interference device (SQUID) galvanically shorting a superconducting resonator to ground. We use a neighboring voltage-biased Josephson junction to inject QPs into the circuit. Upon the injection of QPs, we show that we can trap and clear QPs when the SQUID is flux-biased. We examine effects of the microwave loss associated with bulk QP transport in the resonator, QP-related dissipation in the junction, and QP poisoning events. By monitoring the QP trapping and clearing in time, we study the dynamics of these processes and find a time-scale of few microseconds that is consistent with electron-phonon relaxation in our system and correlated QP trapping and clearing mechanisms. Our results highlight the QP trapping and clearing dynamics as well as the associated time-scales in high transparency Josephson junctions based fabricated on Al-InAs heterostructures. △ Less

Submitted 23 May, 2023; v1 submitted 8 March, 2023; originally announced March 2023.

Journal ref: PRX Quantum 4, 030339 (2023)

Superconducting Diode Effect Sign Change in Epitaxial Al-InAs Josepshon Junctions

Authors: Neda Lotfizadeh, William F. Schiela, Barış Pekerten, Peng Yu, Bassel Heiba Elfeky, William Strickland, Alex Matos-Abiague, Javad Shabani

Abstract: There has recently been a surge of interest in studying the superconducting diode effect (SDE) partly due to the possibility of uncovering the intrinsic properties of a material system. A change of sign of the SDE at finite magnetic field has previously been attributed to different mechanisms. Here, we observe the SDE in epitaxial Al-InAs Josephson junctions with strong Rashba spin-orbit coupling… ▽ More There has recently been a surge of interest in studying the superconducting diode effect (SDE) partly due to the possibility of uncovering the intrinsic properties of a material system. A change of sign of the SDE at finite magnetic field has previously been attributed to different mechanisms. Here, we observe the SDE in epitaxial Al-InAs Josephson junctions with strong Rashba spin-orbit coupling (SOC). We show that this effect strongly depends on the orientation of the in-plane magnetic field. In the presence of a strong magnetic field, we observe a change of sign in the SDE. Simulation and measurement of supercurrent suggest that depending on the superconducting widths, $W_\text{S}$, this sign change may not necessarily be related to 0--$π$ or topological transitions. We find that the strongest sign change in junctions with narrow $W_\text{S}$ is consistent with SOC-induced asymmetry of the critical current under magnetic-field inversion, while in wider $W_\text{S}$, the sign reversal could be related to 0--$π$ transitions and topological superconductivity. △ Less

Submitted 6 April, 2024; v1 submitted 3 March, 2023; originally announced March 2023.

Journal ref: Communications Physics volume 7, Article number: 120 (2024)

Dynamical vortex transitions in a gate-tunable Josephson junction array

Authors: C. G. L. Bøttcher, F. Nichele, J. Shabani, C. J. Palmstrøm, C. M. Marcus

Abstract: We explore vortex dynamics in a two-dimensional Josephson junction array of micron-size superconducting islands fabricated from an epitaxial Al/InAs superconductor-semiconductor heterostructure, with a global top gate controlling Josephson coupling and vortex pinning strength. With applied dc current, minima of differential resistance undergo a transition, becoming local maxima at integer and half… ▽ More We explore vortex dynamics in a two-dimensional Josephson junction array of micron-size superconducting islands fabricated from an epitaxial Al/InAs superconductor-semiconductor heterostructure, with a global top gate controlling Josephson coupling and vortex pinning strength. With applied dc current, minima of differential resistance undergo a transition, becoming local maxima at integer and half-integer flux quanta per plaquette, $f$. The zero-field transition from the superconducting phase is split, but unsplit for the anomalous metal phase, suggesting that pinned vortices are absent or sparse in the superconducting phase, and abundant but frozen in the anomalous metal. The onset of the transition is symmetric around $f=1/2$ but skewed around $f=1$, consistent with a picture of dilute vortices/antivortices on top of a checkerboard ($f = 1/2$) or uniform array of vortices ($f = 1$). Transitions show good scaling but with exponents that differ from Mott values obtained earlier. Besides the skewing at $f=1$, transitions show an overall even-odd pattern of skewing around integer $f$ values, which we attribute to vortex commensuration in the square array leading to symmetries around half-integer $f$. △ Less

Submitted 16 December, 2022; originally announced December 2022.

Comments: 8 pages, 4 main text figures

Tunable Capacitor For Superconducting Qubits Using an InAs/InGaAs Heterostructure

Authors: Nicholas Materise, Matthieu C. Dartiailh, William M. Strickland, Javad Shabani, Eliot Kapit

Abstract: Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heter… ▽ More Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heterostructure. Rigorous numerical simulations of the semiconductor and high frequency electromagnetic behavior of the coupler and microwave circuitry yield an on/off ratio of more than one order of magnitude. We give an estimate of the dielectric-limited loss from the inclusion of the coupler in a two qubit system, with coupler coherences ranging from a few to tens of microseconds. △ Less

Submitted 12 July, 2023; v1 submitted 8 December, 2022; originally announced December 2022.

Comments: 25 pages, 7 figures

The study of contact properties in edge-contacted graphene-aluminum Josephson junctions

Authors: Zhujun Huang, Neda Lotfizadeh, Bassel H. Elfeky, Kim Kisslinger, Edoardo Cuniberto, Peng Yu, Mehdi Hatefipour, Takashi Taniguchi, Kenji Watanabe, Javad Shabani, Davood Shahrjerdi

Abstract: Transparent contact interfaces in superconductor-graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge-contact fabrication process on the transparency of the superconducting aluminum-graphene junction. We show significant improvement in the transparency of our superconductor-graphene junctions by promoting the chemical comp… ▽ More Transparent contact interfaces in superconductor-graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge-contact fabrication process on the transparency of the superconducting aluminum-graphene junction. We show significant improvement in the transparency of our superconductor-graphene junctions by promoting the chemical component of the edge contact etch process. Our results compare favorably with state-of-the-art graphene Josephson junctions. The findings of our study contribute to advancing the fabrication knowledge of edge-contacted superconductor-graphene junctions. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Evolution of ${4π}$-periodic Supercurrent in the Presence of In-plane Magnetic Field

Authors: Bassel Heiba Elfeky, Joseph J. Cuozzo, Neda Lotfizadeh, William F. Schiela, William M. Strickland, Dylan Langone, Enrico Rossi, Javad Shabani

Abstract: In the presence of a 4$π$-periodic contribution to the current phase relation, for example in topological Josephson junctions, odd Shapiro steps are expected to be missing. While missing odd Shapiro steps have been observed in several material systems and interpreted in the context of topological superconductivity, they have also been observed in topologically trivial junctions. Here, we study the… ▽ More In the presence of a 4$π$-periodic contribution to the current phase relation, for example in topological Josephson junctions, odd Shapiro steps are expected to be missing. While missing odd Shapiro steps have been observed in several material systems and interpreted in the context of topological superconductivity, they have also been observed in topologically trivial junctions. Here, we study the evolution of such trivial missing odd Shapiro steps in Al-InAs junctions in the presence of an in-plane magnetic field $B^θ$. We find that the odd steps reappear at a crossover $B^θ$ value, exhibiting an in-plane field angle anisotropy that depends on spin-orbit coupling effects. We interpret this behavior by theoretically analyzing the Andreev bound state spectrum and the transitions induced by the non-adiabatic dynamics of the junction. Our results highlight the complex phenomenology of missing Shapiro steps and the underlying current phase relations in planar Josephson junctions designed to realize Majorana states. △ Less

Submitted 10 February, 2023; v1 submitted 12 October, 2022; originally announced October 2022.

Journal ref: ACS Nano 2023, 17, 5, 4650

Superconducting resonators with voltage-controlled frequency and nonlinearity

Authors: William M. Strickland, Bassel Heiba Elfeky, Joseph O'Connell Yuan, William F. Schiela, Peng Yu, Dylan Langone, Maxim G. Vavilov, Vladimir E. Manucharyan, Javad Shabani

Abstract: Voltage-tunable superconductor-semiconductor devices offer a unique platform to realize dynamic tunability in superconducting quantum circuits. By galvanically connecting a gated InAs-Al Josephson junction to a coplanar waveguide resonator, we demonstrate the use of a wide-range gate-tunable superconducting element. We show that the resonant frequency is controlled via a gate-tunable Josephson ind… ▽ More Voltage-tunable superconductor-semiconductor devices offer a unique platform to realize dynamic tunability in superconducting quantum circuits. By galvanically connecting a gated InAs-Al Josephson junction to a coplanar waveguide resonator, we demonstrate the use of a wide-range gate-tunable superconducting element. We show that the resonant frequency is controlled via a gate-tunable Josephson inductance and that the non-linearity of the voltage-controlled InAs-Al junction is non-dissipative as is the case with conventional Al-AlO$_{x}$ junctions. As the gate voltage is decreased, the inductive participation of the junction increases up to $44\%$, resulting in the resonant frequency being tuned by over 2 GHz. Utilizing the wide tunability of the device, we demonstrate that two resonant modes can be adjusted such that they strongly hybridize, exhibiting an avoided level crossing with a coupling strength of 51 MHz. Implementing such voltage-tunable resonators is the first step toward realizing wafer-scale continuous voltage control in superconducting circuits for qubit-qubit coupling, quantum-limited amplifiers, and quantum memory platforms. △ Less

Submitted 25 December, 2022; v1 submitted 5 October, 2022; originally announced October 2022.

Journal ref: Phys. Rev. Applied 19, 034021 (2023)

The Berezinskii-Kosterlitz-Thouless Transition and Anomalous Metallic Phase in a Hybrid Josephson Junction Array

Authors: C. G. L. Bøttcher, F. Nichele, J. Shabani, C. J. Palmstrøm, C. M. Marcus

Abstract: We investigate the Berezinskii-Kosterlitz-Thouless (BKT) transition in a semiconductor-superconductor two-dimensional Josephson junction array. Tuned by an electrostatic top gate, the system exhibits separate superconducting (S), anomalous metal (M*), and insulating (I) phases, bordered by separatrices of the temperature-dependent of sheet resistance, $R_{s}$. We find that the gate-dependent BKT t… ▽ More We investigate the Berezinskii-Kosterlitz-Thouless (BKT) transition in a semiconductor-superconductor two-dimensional Josephson junction array. Tuned by an electrostatic top gate, the system exhibits separate superconducting (S), anomalous metal (M*), and insulating (I) phases, bordered by separatrices of the temperature-dependent of sheet resistance, $R_{s}$. We find that the gate-dependent BKT transition temperature falls to zero at the S-M* boundary, suggesting incomplete vortex-antivortex pairing in the M* phase. In the S phase, $R_{s}$ is roughly proportional to perpendicular magnetic field at the BKT transition, as expected, while in the M* phase $R_{s}$ deviates from its zero-field value as a power-law in field with exponent close to 1/2 at low temperature. An in-plane magnetic field eliminates the M* phase, leaving a small scaling exponent at the S-I boundary, which we interpret as a remnant of the incipient M* phase. △ Less

Submitted 1 October, 2022; originally announced October 2022.

Comments: 7 pages, 4 figures

Magneto-anisotropic weak antilocalization in near-surface quantum wells

Authors: S. M. Farzaneh, Mehdi Hatefipour, William F. Schiela, Neda Lotfizadeh, Peng Yu, Bassel Heiba Elfeky, William M. Strickland, Alex Matos-Abiague, Javad Shabani

Abstract: We investigate the effects of an in-plane magnetic field on the weak antilocalization signature of near-surface quantum wells lacking bulk and inversion symmetry. The measured magnetoconductivity exhibits a strong anisotropy with respect to the direction of the in-plane magnetic field. The two-fold symmetry of the observed magneto-anisotropy originates from the competition between Rashba and Dress… ▽ More We investigate the effects of an in-plane magnetic field on the weak antilocalization signature of near-surface quantum wells lacking bulk and inversion symmetry. The measured magnetoconductivity exhibits a strong anisotropy with respect to the direction of the in-plane magnetic field. The two-fold symmetry of the observed magneto-anisotropy originates from the competition between Rashba and Dresselhaus spin-orbit couplings. The high sensitivity of the weak antilocalization to the spin texture produced by the combined Zeeman and spin-orbit fields results in very large anisotropy ratios, reaching 100%. Using a semiclassical universal model in quantitative agreement with the experimental data, we uniquely determine the values of the Dresselhaus and Rashba parameters as well as the effective in-plane g-factor of the electrons. Understanding these parameters provides new prospects for novel applications ranging from spintronics to topological quantum computing. △ Less

Submitted 14 November, 2022; v1 submitted 11 August, 2022; originally announced August 2022.

Journal ref: Phys. Rev. Research 6, 013039 (2024)

Gate-tunable, superconductor-semiconductor parametric amplifier

Authors: D. Phan, P. Falthansl-Scheinecker, U. Mishra, W. M. Strickland, D. Langone, J. Shabani, A. P. Higginbotham

Abstract: We have built a parametric amplifier with a Josephson field effect transistor (JoFET) as the active element. The device's resonant frequency is field-effect tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of instantaneous bandwidth, and a 1 dB compression point of -125.5 dBm when operated at a fixed resonance frequency. We have built a parametric amplifier with a Josephson field effect transistor (JoFET) as the active element. The device's resonant frequency is field-effect tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of instantaneous bandwidth, and a 1 dB compression point of -125.5 dBm when operated at a fixed resonance frequency. △ Less

Submitted 8 May, 2023; v1 submitted 12 June, 2022; originally announced June 2022.

Comments: 13 pages, 11 figures

Controlling Fermi level pinning in near-surface InAs quantum wells

Authors: William M. Strickland, Mehdi Hatefipour, Dylan Langone, S. M. Farzaneh, Javad Shabani

Abstract: Hybrid superconductor-semiconductor heterostructures are a promising platform for quantum devices based on mesoscopic and topological superconductivity. In these structures, a semiconductor must be in close proximity to a superconductor and form an ohmic contact. This can be accommodated in narrow band gap semiconductors such as InAs, where the surface Fermi level is positioned close to the conduc… ▽ More Hybrid superconductor-semiconductor heterostructures are a promising platform for quantum devices based on mesoscopic and topological superconductivity. In these structures, a semiconductor must be in close proximity to a superconductor and form an ohmic contact. This can be accommodated in narrow band gap semiconductors such as InAs, where the surface Fermi level is positioned close to the conduction band. In this work, we study the structural properties of near-surface InAs quantum wells and find that surface morphology is closely connected to low-temperature transport, where electron mobility is highly sensitive to the growth temperature of the underlying graded buffer layer. By introducing an In$_{0.81}$Al$_{0.19}$As capping layer, we show that we can modify the surface Fermi level pinning within the first nanometer of the In$_{0.81}$Al$_{0.19}$As thin film. Experimental measurements show a strong agreement with Schrödinger-Poisson calculations of the electron density, suggesting the conduction band energy of the In$_{0.81}$Ga$_{0.19}$As and In$_{0.81}$Al$_{0.19}$As surface is pinned to \SI{40}{\milli eV} and \SI{309}{\milli eV} above the Fermi level respectively. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Journal ref: Appl. Phys. Lett. 121, 092104 (2022)

Coexistence of superconductivity and weak anti-localization at KTaO3 (111) interfaces

Authors: Athby H. Al-Tawhid, Jesse Kanter, Mehdi Hatefipour, Divine P. Kumah, Javad Shabani, Kaveh Ahadi

Abstract: The intersection of two-dimensional superconductivity and topologically nontrivial states hosts a wide range of quantum phenomena, including Majorana fermions. Coexistence of topologically nontrivial states and superconductivity in a single material, however, remains elusive. Here, we report on the observation of two-dimensional superconductivity and weak anti-localization at the TiOx/KTaO3(111) i… ▽ More The intersection of two-dimensional superconductivity and topologically nontrivial states hosts a wide range of quantum phenomena, including Majorana fermions. Coexistence of topologically nontrivial states and superconductivity in a single material, however, remains elusive. Here, we report on the observation of two-dimensional superconductivity and weak anti-localization at the TiOx/KTaO3(111) interfaces. A remnant, saturating resistance persists below the transition temperature as superconducting puddles fail to reach phase coherence. Signatures of weak anti-localization are observed below the superconducting transition, suggesting the coexistence of superconductivity and weak anti-localization. The superconducting interfaces show roughly one order of magnitude larger weak anti-localization correction, compared to non-superconducting interfaces, alluding to a relatively large coherence length in these interfaces. △ Less

Submitted 20 September, 2021; originally announced September 2021.

Journal ref: Journal of Electronic Materials 51, no. 11 (2022): 6305-6309

Oxygen vacancy-induced anomalous Hall effect in a nominally non-magnetic oxide

Authors: Athby H. Al-Tawhid, Jesse Kanter, Mehdi Hatefipour, Douglas L. Irving, Divine P. Kumah, Javad Shabani, Kaveh Ahadi

Abstract: The anomalous Hall effect, a hallmark of broken time-reversal symmetry and spin-orbit coupling, is frequently observed in magnetically polarized systems. Its realization in non-magnetic systems, however, remains elusive. Here, we report on the observation of anomalous Hall effect in nominally non-magnetic KTaO3. Anomalous Hall effect emerges in reduced KTaO3 and shows an extrinsic to intrinsic cro… ▽ More The anomalous Hall effect, a hallmark of broken time-reversal symmetry and spin-orbit coupling, is frequently observed in magnetically polarized systems. Its realization in non-magnetic systems, however, remains elusive. Here, we report on the observation of anomalous Hall effect in nominally non-magnetic KTaO3. Anomalous Hall effect emerges in reduced KTaO3 and shows an extrinsic to intrinsic crossover. A paramagnetic behavior is observed in reduced samples using first principles calculations and quantitative magnetometry. The observed anomalous Hall effect follows the oxygen vacancy-induced magnetization response, suggesting that the localized magnetic moments of the oxygen vacancies scatter conduction electrons asymmetrically and give rise to anomalous Hall effect. The anomalous Hall conductivity becomes insensitive to scattering rate in the low temperature limit (T<5 K), implying that the Berry curvature of the electrons on the Fermi surface controls the anomalous Hall effect. Our observations describe a detailed picture of many-body interactions, triggering anomalous Hall effect in a non-magnetic system. △ Less

Submitted 27 December, 2022; v1 submitted 16 September, 2021; originally announced September 2021.

Journal ref: Journal of Electronic Materials 51.12 (2022): 7073-7077

Induced superconducting pairing in integer quantum Hall edge states

Authors: Mehdi Hatefipour, Joseph J. Cuozzo, Jesse Kanter, William Strickland, Christopher R. Allemang, Tzu-Ming Lu, Enrico Rossi, Javad Shabani

Abstract: Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We… ▽ More Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. We analyze the experimental data using the Landauer-Büttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor. △ Less

Submitted 6 April, 2022; v1 submitted 19 August, 2021; originally announced August 2021.

Comments: New measurements. Updated figures and discussion

Journal ref: Nano Lett. 2022, 22, 15, 6173

Local Control of Supercurrent Density in Epitaxial Planar Josephson Junctions

Authors: Bassel H. Elfeky, Neda Lotfizadeh, William F. Schiela, William M. Strickland, Matthieu Dartiailh, Kasra Sardashti, Mehdi Hatefipour, Peng Yu, Natalia Pankratova, Hanho Lee, Vladimir E. Manucharyan, Javad Shabani

Abstract: The critical current response to an applied out-of-plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. In Josephson junctions with semiconducting weak links, the carrier density and, therefore the overall current distribution could be modified electrostatically via metallic gates. Here, we show local control of the current distribution in… ▽ More The critical current response to an applied out-of-plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. In Josephson junctions with semiconducting weak links, the carrier density and, therefore the overall current distribution could be modified electrostatically via metallic gates. Here, we show local control of the current distribution in an epitaxial Al-InAs Josephson junction equipped with five mini-gates. We demonstrate that not only can the junction width be electrostatically defined but also we can locally adjust the current profile to form superconducting quantum interference devices. Our studies show enhanced edge conduction in such long junctions, which can be eliminated by mini-gates to create a uniform current distribution. △ Less

Submitted 19 July, 2021; v1 submitted 16 July, 2021; originally announced July 2021.

Journal ref: Nano Letters, 21 (19), 8274-8280 (2021)

Detecting induced $p \pm ip$ pairing at the Al-InAs interface with a quantum microwave circuit

Authors: D. Phan, J. Senior, A. Ghazaryan, M. Hatefipour, W. M. Strickland, J. Shabani, M. Serbyn, A. P. Higginbotham

Abstract: Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of… ▽ More Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband $p \pm i p$ pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs. △ Less

Submitted 11 May, 2022; v1 submitted 8 July, 2021; originally announced July 2021.

Comments: 7+20 pages, 5+17 figures

Epitaxial Superconductor-Semiconductor Two-Dimensional Systems for Superconducting Quantum Circuits

Authors: Joseph O'Connell Yuan, Kaushini S. Wickramasinghe, William M. Strickland, Matthieu C. Dartiailh, Kasra Sardashti, Mehdi Hatefipour, Javad Shabani

Abstract: Qubits on solid state devices could potentially provide the rapid control necessary for developing scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits substantially over the past two decades. Here we show by improving interface between InAs as a semiconductor and Al as a superconductor, one can reliably fabrica… ▽ More Qubits on solid state devices could potentially provide the rapid control necessary for developing scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits substantially over the past two decades. Here we show by improving interface between InAs as a semiconductor and Al as a superconductor, one can reliably fabricate voltage-controlled Josephson junction field effect transistor (JJ-FET) that can be used as tunable qubits, resonators, and coupler switches. We find that band gap engineering is crucial in realizing a two-dimensional electron gas near the surface. In addition, we show how the coupling between the semiconductor layer and the superconducting contacts can affect qubit properties. We present the anharmonicity and coupling strengths from one and two-photon absorption in a quantum two level system fabricated with a JJ-FET. △ Less

Submitted 26 March, 2021; originally announced April 2021.

Comments: This paper is part of the Special Topic Collection: Honoring Dr. Art Gossard's 85th Birthday and his Leadership in the Science and Technology of Molecular Beam Epitaxy

Journal ref: Journal of Vacuum Science & Technology A 39, 033407 (2021)

Fusion of Majorana Bound States with Mini-Gate Control in Two-Dimensional Systems

Authors: Tong Zhou, Matthieu C. Dartiailh, Kasra Sardashti, Jong E. Han, Alex Matos-Abiague, Javad Shabani, Igor Zutic

Abstract: A hallmark of topological superconductivity is the non-Abelian statistics of Majorana bound states (MBS), its chargeless zero-energy emergent quasiparticles. The resulting fractionalization of a single electron, stored nonlocally as a two spatially-separated MBS, provides a powerful platform for implementing fault-tolerant topological quantum computing. However, despite intensive efforts, experime… ▽ More A hallmark of topological superconductivity is the non-Abelian statistics of Majorana bound states (MBS), its chargeless zero-energy emergent quasiparticles. The resulting fractionalization of a single electron, stored nonlocally as a two spatially-separated MBS, provides a powerful platform for implementing fault-tolerant topological quantum computing. However, despite intensive efforts, experimental support for MBS remains indirect and does not probe their non-Abelian statistics. Here we propose how to overcome this obstacle in mini-gate controlled planar Josephson junctions (JJs) and demonstrate non-Abelian statistics through MBS fusion, detected by charge sensing using a quantum point contact, based on dynamical simulations. The feasibility of preparing, manipulating, and fusing MBS in two-dimensional (2D) systems is supported in our experiments which demonstrate the gate control of topological transition and superconducting properties with five mini gates in InAs/Al-based JJs. While we focus on this well-established platform, where the topological superconductivity was already experimentally detected, our proposal to identify elusive non-Abelian statistics motivates also further MBS studies in other gate-controlled 2D systems. △ Less

Submitted 17 March, 2022; v1 submitted 22 January, 2021; originally announced January 2021.

Comments: 10 pages, 7 figures; Accepted in Nature Communications

Journal ref: Nature Communications 13, 1738-1747 (2022)

Tailoring Superconducting Phases Observed in Hyperdoped Si:Ga for Cryogenic Circuit Applications

Authors: K. Sardashti, T. Nguyen, M. Hatefipour, W. L. Sarney, J. Yuan, W. Mayer, K. Kisslinger, J. Shabani

Abstract: Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor--semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvi… ▽ More Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor--semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvin temperatures is yet to be evaluated. Here, we report the presence of a reentrant resistive transition below T$_{\rm c}$ for Si:Ga whose strength strongly depends on the distribution of the Ga clusters that precipitate in the implanted Si after annealing. By monitoring the reentrant resistance over a wide parameter space of implantation energies and fluences, we determine conditions that significantly improve the coherent coupling of Ga clusters, therefore, eliminating the reentrant transition even at temperatures as low as 20~mK. △ Less

Submitted 8 December, 2020; originally announced December 2020.

Journal ref: Appl. Phys. Lett. 118, 073102 (2021)

Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium

Authors: Kasra Sardashti, Tri D. Nguyen, Wendy L. Sarney, Asher C. Leff, Mehdi Hatefipour, Matthieu C. Dartiailh, Joseph Yuan, William Mayer, Javad Shabani

Abstract: Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in materials such as Silicon and Germanium. Here, we report systematic synthesis and characterization of superconducting phases in hyperdoped Germanium prepared by Gal… ▽ More Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in materials such as Silicon and Germanium. Here, we report systematic synthesis and characterization of superconducting phases in hyperdoped Germanium prepared by Gallium ion implantation beyond its solubility limits. The resulting structural and physical characteristics have been tailored by changing the implantation energy and activation annealing temperature. Surprisingly, in addition to the poly-crystalline phase with weakly-coupled superconducting Ga clusters we find a nano-crystalline phase with quasi-2D characteristics consisting of a thin Ga film constrained near top surfaces. The new phase shows signatures of strong disorder such as anomalous B${\rm c}$ temperature dependence and crossings in magentoresistance isotherms. Apart from using hyperdoped Ge as a potential test-bed for studying signatures of quantum phase transitions (e.g. quantum Griffith singularity), our results suggest the possibility of integration of hyperdoped Ge nano-crystalline phase into superconducting circuits due to its 2D nature. △ Less

Submitted 13 August, 2020; originally announced August 2020.

Tuning supercurrent in Josephson field effect transistors using h-BN dielectric

Authors: Fatemeh Barati, Josh P. Thompson, Matthieu C. Dartiailh, Kasra Sardashti, William Mayer, Joseph Yuan, Kaushini Wickramasinghe, K. Watanabe, T. Taniguchi, Hugh Churchill, Javad Shabani

Abstract: The transparent interface in epitaxial Al-InAs heterostructures provides an excellent platform for potential advances in mesoscopic and topological superconductivity. Semiconductor-based Josephson Junction Field Effect Transistors (JJ-FETs) fabricated on these heterostructures have a metallic gate that tunes the supercurrent. Here we report the fabrication and measurement of gate-tunable Al-InAs J… ▽ More The transparent interface in epitaxial Al-InAs heterostructures provides an excellent platform for potential advances in mesoscopic and topological superconductivity. Semiconductor-based Josephson Junction Field Effect Transistors (JJ-FETs) fabricated on these heterostructures have a metallic gate that tunes the supercurrent. Here we report the fabrication and measurement of gate-tunable Al-InAs JJ-FETs in which the gate dielectric in contact with the InAs is produced by mechanically exfoliated hexagonal boron nitride (h-BN) followed by dry transfer using a van der Waals-mediated pick up process. We discuss the fabrication process that enables compatibility between layered material transfer and Al-InAs heterostructures to avoid chemical reactions and unintentional doping that could affect the characteristics of the JJ-FET. We achieve full gate-tunablity of supercurrent by using only 5~nm thick h-BN flakes. We contrast our process with devices fabricated using a conventional AlO$_{\rm x}$ gate dielectric and show that h-BN could be an excellent competing dielectric for JJ-FET devices. We observe that the product of normal resistance and critical current, I$_{\rm c}$R$_{\rm n}$, is comparable for both types of devices, but strikingly higher R$_{\rm n}$ for the h-BN-based devices indicating that the surface is doped less compared to AlO$_{\rm x}$ gate dielectric. △ Less

Submitted 27 January, 2021; v1 submitted 23 July, 2020; originally announced July 2020.

Journal ref: Nano Lett. 21, 1915 (2021)

Missing Shapiro steps in topologically trivial Josephson Junction on InAs quantum well

Authors: Matthieu C. Dartiailh, Joseph J. Cuozzo, William Mayer, Joseph Yuan, Kaushini S. Wickramasinghe, Enrico Rossi, Javad Shabani

Abstract: Josephson junctions hosting Majorana fermions have been predicted to exhibit a 4$π$ periodic current phase relation. The experimental consequence of this periodicity is the disappearance of odd steps in Shapiro steps experiments. Experimentally, missing odd Shapiro steps have been observed in a number of materials systems with strong spin-orbit coupling and have been interpreted in the context of… ▽ More Josephson junctions hosting Majorana fermions have been predicted to exhibit a 4$π$ periodic current phase relation. The experimental consequence of this periodicity is the disappearance of odd steps in Shapiro steps experiments. Experimentally, missing odd Shapiro steps have been observed in a number of materials systems with strong spin-orbit coupling and have been interpreted in the context of topological superconductivity. Here, we report on missing odd steps in topologically trivial Josephson junctions fabricated on InAs quantum wells. We ascribe our observations to the high transparency of our junctions allowing Landau-Zener transitions. The probability of these processes is found to be independent of the drive frequency. We analyze our results using a bi-modal transparency distribution which demonstrates that only few modes carrying 4$π$ periodic current are sufficient to describe the disappearance of odd steps. Our findings highlight the elaborate circumstances that have to be considered in the investigation of the 4$π$ Josephson junctions in relationship to topological superconductivity. △ Less

Submitted 30 April, 2020; originally announced May 2020.

Journal ref: Nature Communications, 12, 78 (2021)

Experimental Measurements of Effective Mass in Near Surface InAs Quantum Wells

Authors: Joseph Yuan, Mehdi Hatefipour, Brenden A. Magill, William Mayer, Matthieu C. Dartiailh, Kasra Sardashti, Kaushini S. Wickramasinghe, Giti A. Khodaparast, Yasuhiro H. Matsuda, Yoshimitsu Kohama, Zhuo Yang, Sunil Thapa, Christopher J. Stanton, Javad Shabani

Abstract: Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the… ▽ More Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the surface. The electron mass extracted from the envelope of the Shubnikov-de Haas oscillations shows an average effective mass $m^{*}$ = 0.04 at low magnetic field. Complementary to our magnetotransport study, we employed cyclotron resonance measurements and extracted the electron effective mass in the ultra high magnetic field regime. Our measurements show that the effective mass depends on magnetic field in this regime. The data can be understood by considering a model that includes non-parabolicity of the indium arsenide conduction bands. △ Less

Submitted 18 May, 2020; v1 submitted 6 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. B 101, 205310 (2020)

Superconducting proximity effect in InAsSb surface quantum wells with in-situ Al contact

Authors: William Mayer, William F. Schiela, Joseph Yuan, Mehdi Hatefipour, Wendy L. Sarney, Stefan P. Svensson, Asher C. Leff, Tiago Campos, Kaushini S. Wickramasinghe, Matthieu C. Dartiailh, Igor Zutic, Javad Shabani

Abstract: We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable prop… ▽ More We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs$_{0.5}$Sb$_{0.5}$ quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, $I_{c}R_{N} = \SI{270}{\micro V}$, and excess current, $I_{ex}R_{N} = \SI{200}{\micro V}$ at contact separations of 500~nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts. △ Less

Submitted 31 March, 2020; v1 submitted 27 September, 2019; originally announced September 2019.

Journal ref: ACS Applied Electronic Materials 2020

Phase Control of Majorana Bound States in a Topological X Junction

Authors: Tong Zhou, Matthieu C. Dartiailh, William Mayer, Jong E. Han, Alex Matos-Abiague, Javad Shabani, Igor Zutic

Abstract: Topological superconductivity supports exotic Majorana bound states (MBS) which are chargeless zero-energy emergent quasiparticles. With their non-Abelian exchange statistics and fractionalization of a single electron stored nonlocally as a spatially separated MBS, they are particularly suitable for implementing fault-tolerant topological quantum computing. While the main efforts to realize MBS ha… ▽ More Topological superconductivity supports exotic Majorana bound states (MBS) which are chargeless zero-energy emergent quasiparticles. With their non-Abelian exchange statistics and fractionalization of a single electron stored nonlocally as a spatially separated MBS, they are particularly suitable for implementing fault-tolerant topological quantum computing. While the main efforts to realize MBS have focused on one-dimensional systems, the onset of topological superconductivity requires delicate parameter tuning and geometric constraints pose significant challenges for their control and demonstration of non-Abelian statistics. To overcome these challenges, building on recent experimental advances in planar Josephson junctions (JJs), we propose a MBS platform of X-shaped JJs. This versatile implementation reveals how external flux control of the superconducting phase difference can generate and manipulate multiple MBS pairs to probe non-Abelian statistics. The underlying topological superconductivity exists over a large parameter space, consistent with materials used in our fabrication of such X junctions, as an important step towards scalable topological quantum computing. △ Less

Submitted 21 February, 2020; v1 submitted 11 September, 2019; originally announced September 2019.

Comments: 6 pages, 4 figures, accepted in PRL

Journal ref: Phys. Rev. Lett. 124, 137001 (2020)

Phase signature of topological transition in Josephson Junctions

Authors: Matthieu C. Dartiailh, William Mayer, Joseph Yuan, Kaushini S. Wickramasinghe, Alex Matos-Abiague, Igor Žutić, Javad Shabani

Abstract: Topological superconductivity holds promise for fault-tolerant quantum computing. While planar Josephson junctions are attractive candidates to realize this exotic state, direct phase-measurements as the fingerprint of the topological transition are missing. By embedding two gate-tunable Al/InAs Josephson junctions in a loop geometry, we measure a $π$-jump in the junction phase with increasing in-… ▽ More Topological superconductivity holds promise for fault-tolerant quantum computing. While planar Josephson junctions are attractive candidates to realize this exotic state, direct phase-measurements as the fingerprint of the topological transition are missing. By embedding two gate-tunable Al/InAs Josephson junctions in a loop geometry, we measure a $π$-jump in the junction phase with increasing in-plane magnetic field, ${\bf B}_\|$. This jump is accompanied by a minimum of the critical current, indicating a closing and reopening of the superconducting gap, strongly anisotropic in ${\bf B}_\|$. Our theory confirms that these signatures of a topological transition are compatible with the emergence of Majorana states. △ Less

Submitted 22 January, 2021; v1 submitted 3 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Lett. 126, 036802 (2021)

Josephson Junction Field-effect Transistors for Boolean Logic Cryogenic Applications

Authors: Feng Wen, Javad Shabani, Emanuel Tutuc

Abstract: Josephson junction field effect transistors (JJ-FET) share design similarities with metal-oxide-semiconductor field effect transistors, except for the source/drain contacts being replaced by superconductors. Similarly, the super current due to proximity effect is tunable by the gate voltage. In this study, we examine the feasibility of JJ-FET-based Boolean logic and memory elements for cryogenic c… ▽ More Josephson junction field effect transistors (JJ-FET) share design similarities with metal-oxide-semiconductor field effect transistors, except for the source/drain contacts being replaced by superconductors. Similarly, the super current due to proximity effect is tunable by the gate voltage. In this study, we examine the feasibility of JJ-FET-based Boolean logic and memory elements for cryogenic computing, in light of recent advances in novel materials and fabrication techniques. Using a two-dimensional ballistic transport JJ-FET model, we implement circuit level simulations for JJ-FET logic gates, and discuss criteria for realizing signal restoration, as well as fanout. We show that the JJ-FET is a promising candidate for very low power, clocked voltage-level dynamic logic at cryogenic temperatures. △ Less

Submitted 30 May, 2019; originally announced May 2019.

Comments: 7 pages, 9 figures

Gate Controlled Anomalous Phase Shift in Al/InAs Josephson Junctions

Authors: William Mayer, Matthieu C. Dartiailh, Joseph Yuan, Kaushini S. Wickramasinghe, Enrico Rossi, Javad Shabani

Abstract: In a standard Josephson junction the current is zero when the phase difference between the superconducting leads is zero. This condition is protected by parity and time-reversal symmetries. However, the combined presence of spin-orbit coupling and magnetic field breaks these symmetries and can lead to a finite supercurrent even when the phase difference is zero. This is the so called anomalous Jos… ▽ More In a standard Josephson junction the current is zero when the phase difference between the superconducting leads is zero. This condition is protected by parity and time-reversal symmetries. However, the combined presence of spin-orbit coupling and magnetic field breaks these symmetries and can lead to a finite supercurrent even when the phase difference is zero. This is the so called anomalous Josephson effect -- the hallmark effect of superconducting spintronics --and can be characterized by the corresponding anomalous phase shift ($φ_0$). We report the observation of a tunable anomalous Josephson effect in InAs/Al Josephson junctions measured via a superconducting quantum interference device (SQUID). By gate controlling the density of InAs we are able to tune the spin-orbit coupling of the Josephson junction by more than one order of magnitude. This gives us the ability to tune $φ_0$, and opens several new opportunities for superconducting spintronics, and new possibilities for realizing and characterizing topological superconductivity. △ Less

Submitted 29 May, 2019; originally announced May 2019.

Journal ref: Nature Communications 11, 212 (2020)

Electrical control of Majorana Bound States Using Magnetic Stripes

Authors: Narayan Mohanta, Tong Zhou, Junwen Xu, Jong E. Han, Andrew D. Kent, Javad Shabani, Igor Zutic, Alex Matos-Abiague

Abstract: A hybrid semiconductor-superconductor nanowire on the top of a magnetic film in the stripe phase experiences a magnetic texture from the underlying fringing fields. The Zeeman interaction with the highly inhomogeneous magnetic textures generates a large synthetic spin-orbit coupling. We show that this platform can support the formation of Majorana bound states (MBS) localized at the ends of the na… ▽ More A hybrid semiconductor-superconductor nanowire on the top of a magnetic film in the stripe phase experiences a magnetic texture from the underlying fringing fields. The Zeeman interaction with the highly inhomogeneous magnetic textures generates a large synthetic spin-orbit coupling. We show that this platform can support the formation of Majorana bound states (MBS) localized at the ends of the nanowire. The transition to the topological superconducting phase not only depends on the nanowire parameters and stripe size but also on the relative orientation of the stripes with respect to the nanowire axis. Topological phase transitions with the corresponding emergence or destruction of MBS can be induced by reorienting the stripes or shifting their position, which can be achieved by passing a charge current through the magnetic film or by applying electrically-controlled strain to it. The proposed platform removes the need for external magnetic fields and offers a non-invasive electrical tuning of MBS with the perturbation (current or strain) acting only on thee magnetic film. △ Less

Submitted 24 September, 2019; v1 submitted 19 March, 2019; originally announced March 2019.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. Applied 12, 034048 (2019)

The multi-terminal Josephson effect

Authors: Natalia Pankratova, Hanho Lee, Roman Kuzmin, Maxim Vavilov, Kaushini Wickramasinghe, William Mayer, Joseph Yuan, Javad Shabani, Vladimir E. Manucharyan

Abstract: Establishment of phase-coherence and a non-dissipative (super)current between two weakly coupled superconductors, known as the Josephson effect, plays a foundational role in basic physics and applications to metrology, precision sensing, high-speed digital electronics, and quantum computing. The junction ranges from planar insulating oxides to single atoms, molecules, semiconductor nanowires, and… ▽ More Establishment of phase-coherence and a non-dissipative (super)current between two weakly coupled superconductors, known as the Josephson effect, plays a foundational role in basic physics and applications to metrology, precision sensing, high-speed digital electronics, and quantum computing. The junction ranges from planar insulating oxides to single atoms, molecules, semiconductor nanowires, and generally to any finite-size coherent conductor. Recently, junctions of more than two superconducting terminals gained broad attention in the context of braiding of Majorana fermions in the solid state for fault-tolerant quantum computing, and accessing physics and topology in dimensions higher than three. Here we report the first observation of Josephson effect in 3- and 4-terminal junctions, fabricated in a top-down fashion from a semiconductor/superconductor (InAs/Al) epitaxial two-dimensional heterostructure. Due to interactions, the critical current of an N-terminal junction becomes the boundary of an (N-1)-dimensional manifold of simultaneously allowed supercurrents. The measured shapes of such manifolds are explained by the scattering theory of mesoscopic superconductivity, and they can be remarkably sensitive to the junction's symmetry class. Furthermore, we observed a notably high-order (up to 8) multiple Andreev reflections simultaneously across every terminals pair, which verifies the multi-terminal nature of normal scattering and a high interface quality in our devices. Given the previously shown gate-control of carrier density and evidence of spin-orbit scattering in InAs/Al heterostructures, and device compatibility with other 2D materials, the multi-terminal Josephson effect reported here can become a testbed for physics and applications of topological superconductivity. △ Less

Submitted 14 December, 2018; originally announced December 2018.

Comments: Supplementary Material available upon request

Journal ref: Phys. Rev. X 10, 031051 (2020)