Showing 1–22 of 22 results for author: Pennycook, T J

Investigating the convergence properties of iterative ptychography for atomic-resolution low-dose imaging

Authors: Tamazouzt Chennit, Songge Li, Hoelen L. Lalandec Robert, Christoph Hofer, Nadine J. Schrenker, Liberato Manna, Sara Bals, Timothy J. Pennycook, Jo Verbeeck

Abstract: This study investigates the convergence properties of a collection of iterative electron ptychography methods, under low electron doses ($<$ 10$^3$ $e^-/A^2$) and gives particular attention to the impact of the user-defined update strengths. We demonstrate that carefully chosen values for this parameter, ideally smaller than those conventionally met in the literature, are essential for achieving a… ▽ More This study investigates the convergence properties of a collection of iterative electron ptychography methods, under low electron doses ($<$ 10$^3$ $e^-/A^2$) and gives particular attention to the impact of the user-defined update strengths. We demonstrate that carefully chosen values for this parameter, ideally smaller than those conventionally met in the literature, are essential for achieving accurate reconstructions of the projected electrostatic potential. Using a 4D dataset of a thin hybrid organic-inorganic formamidinium lead bromide (FAPbBr$_{3}$) sample, we show that convergence is in practice achievable only when the update strengths for both the object and probe are relatively small compared to what is found in literature. Additionally we demonstrate that under low electron doses, the reconstructions initial error increases when the update strength coefficients are reduced below a certain threshold emphasizing the existence of critical values beyond which the algorithms are trapped in local minima. These findings highlight the need for carefully optimized reconstruction parameters in iterative ptychography, especially when working with low electron doses, ensuring both effective convergence and correctness of the result. △ Less

Submitted 9 July, 2025; originally announced July 2025.

Hexatic Phase in Covalent Two-Dimensional Silver Iodide

Authors: Thuy An Bui, David Lamprecht, Jacob Madsen, Marcin Kurpas, Peter Kotrusz, Alexander Markevich, Clemens Mangler, Jani Kotakoski, Lado Filipovic, Jannik C. Meyer, Timothy J. Pennycook, Viera Skakalova, Kimmo Mustonen

Abstract: According to the Kosterlitz-Thouless-Halperin-Nelson-Young (KTHNY) theory, the transition from a solid to liquid in two dimensions (2D) proceeds through an orientationally ordered liquid-crystal-like hexatic phase. While experiments have confirmed the KTHNY melting scenario in some 2D systems such as crystals of skyrmions and of noble gas atoms, no evidence has previously been found for it in cova… ▽ More According to the Kosterlitz-Thouless-Halperin-Nelson-Young (KTHNY) theory, the transition from a solid to liquid in two dimensions (2D) proceeds through an orientationally ordered liquid-crystal-like hexatic phase. While experiments have confirmed the KTHNY melting scenario in some 2D systems such as crystals of skyrmions and of noble gas atoms, no evidence has previously been found for it in covalently bonded 2D crystals. Here, 2D crystals of silver iodide embedded in multi-layer graphene are studied with in situ scanning transmission electron microscopy (STEM). Near the melting point, a highly dynamic state of AgI emerges that we show to be the first observation of the hexatic phase in covalent 2D materials. △ Less

Submitted 10 January, 2025; originally announced January 2025.

Reliable phase quantification in focused probe electron ptychography of thin materials

Authors: Christoph Hofer, Timothy J. Pennycook

Abstract: Electron ptychography provides highly sensitive, dose efficient phase images which can be corrected for aberrations after the data has been acquired. This is crucial when very precise quantification is required, such as with sensitivity to charge transfer due to bonding. Drift can now be essentially eliminated as a major impediment to focused probe ptychography, which benefits from the availabilit… ▽ More Electron ptychography provides highly sensitive, dose efficient phase images which can be corrected for aberrations after the data has been acquired. This is crucial when very precise quantification is required, such as with sensitivity to charge transfer due to bonding. Drift can now be essentially eliminated as a major impediment to focused probe ptychography, which benefits from the availability of easily interpretable simultaneous Z-contrast imaging. However challenges have remained when quantifying the ptychographic phases of atomic sites. The phase response of a single atom has a negative halo which can cause atoms to reduce in phase when brought closer together. When unaccounted for, as in integrating methods of quantification, this effect can completely obscure the effects of charge transfer. Here we provide a new method of quantification that overcomes this challenge, at least for 2D materials, and is robust to experimental parameters such as noise, sample tilt. △ Less

Submitted 26 July, 2023; originally announced July 2023.

Detecting charge transfer at defects in 2D materials with electron ptychography

Authors: Christoph Hofer, Jacob Madsen, Toma Susi, Timothy J. Pennycook

Abstract: Electronic charge transfer at the atomic scale can reveal fundamental information about chemical bonding, but is far more challenging to directly image than the atomic structure. The charge density is dominated by the atomic nuclei, with bonding causing only a small perturbation. Thus detecting any change due to bonding requires a higher level of sensitivity than imaging structure and the overall… ▽ More Electronic charge transfer at the atomic scale can reveal fundamental information about chemical bonding, but is far more challenging to directly image than the atomic structure. The charge density is dominated by the atomic nuclei, with bonding causing only a small perturbation. Thus detecting any change due to bonding requires a higher level of sensitivity than imaging structure and the overall charge density. Here we achieve the sensitivity required to detect charge transfer in both pristine and defected monolayer WS\textsubscript{2} using the high dose efficiency of electron ptychography and its ability to correct for lens aberrations. Excellent agreement is achieved with first-principles image simulations including where thermal diffuse scattering is explicitly modeled via finite-temperature molecular dynamics based on density functional theory. The focused-probe ptychography configuration we use also provides the important ability to concurrently collect the annular dark-field signal, which can be unambiguously interpreted in terms of the atomic structure and chemical identity of the atoms, independently of the charge transfer. Our results demonstrate both the power of ptychographic reconstructions and the importance of quantitatively accurate simulations to aid their interpretation. △ Less

Submitted 13 January, 2025; v1 submitted 11 January, 2023; originally announced January 2023.

Towards Exotic Layered Materials: 2D Cuprous Iodide

Authors: Kimmo Mustonen, Christoph Hofer, Peter Kotrusz, Alexander Markevich, Martin Hulman, Clemens Mangler, Toma Susi, Timothy J. Pennycook, Karol Hricovini, Christine M. Richter, Jannik C. Meyer, Jani Kotakoski, Viera Skakalova

Abstract: Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the lar… ▽ More Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the large number of layered materials that may exist in other temperatures and pressures. Here, we demonstrate how these structures can be stabilized in 2D van der Waals stacks under room temperature via growing them directly in graphene encapsulation by using graphene oxide as the template material. Specifically, we produce an ambient stable 2D structure of copper and iodine, a material that normally only occurs in layered form at elevated temperatures between 645 and 675 K. Our results establish a route to the production of more exotic phases of materials that would otherwise be difficult or impossible to stabilize for experiments in ambient. △ Less

Submitted 3 December, 2021; v1 submitted 17 September, 2021; originally announced September 2021.

Comments: 15 pages, 6 figures, separate supplementary material included

Picometer-precision few-tilt ptychotomography of 2D materials

Authors: Christoph Hofer, Kimmo Mustonen, Viera Skakalova, Timothy J. Pennycook

Abstract: From ripples to defects, edges and grain boundaries, the 3D atomic structure of 2D materials is critical to their properties. However the damage inflicted by conventional 3D analysis precludes its use with fragile 2D materials, particularly for the analysis of local defects. Here we dramatically increase the potential for precise local 3D atomic structure analysis of 2D materials, with both greatl… ▽ More From ripples to defects, edges and grain boundaries, the 3D atomic structure of 2D materials is critical to their properties. However the damage inflicted by conventional 3D analysis precludes its use with fragile 2D materials, particularly for the analysis of local defects. Here we dramatically increase the potential for precise local 3D atomic structure analysis of 2D materials, with both greatly improved dose efficiency and sensitivity to light elements. We demonstrate light atoms can now be located in complex 2D materials with picometer precision at doses 30 times lower than previously possible. Moreover we demonstrate this using a material, WS$_2$, in which the light S atoms are in fact practically invisible to conventional methods. The key advance is combining the concept of few tilt tomography with highly dose efficient ptychography in scanning transmission electron microscopy. We further demonstrate the method experimentally with the even more challenging and newly discovered 2D CuI, leveraging a new extremely high temporal resolution camera. △ Less

Submitted 21 June, 2022; v1 submitted 10 August, 2021; originally announced August 2021.

Event driven 4D STEM acquisition with a Timepix3 detector: microsecond dwell time and faster scans for high precision and low dose applications

Authors: Daen Jannis, Christoph Hofer, Chuang Gao, Xiaobin Xie, Armand Béché, Timothy J. Pennycook, Jo Verbeeck

Abstract: Four dimensional scanning transmission electron microscopy (4D STEM) records the scattering of electrons in a material in great detail. The benefits offered by 4D STEM are substantial, with the wealth of data it provides facilitating for instance high precision, high electron dose efficiency phase imaging via center of mass or ptychography based analysis. However the requirement for a 2D image of… ▽ More Four dimensional scanning transmission electron microscopy (4D STEM) records the scattering of electrons in a material in great detail. The benefits offered by 4D STEM are substantial, with the wealth of data it provides facilitating for instance high precision, high electron dose efficiency phase imaging via center of mass or ptychography based analysis. However the requirement for a 2D image of the scattering to be recorded at each probe position has long placed a severe bottleneck on the speed at which 4D STEM can be performed. Recent advances in camera technology have greatly reduced this bottleneck, with the detection efficiency of direct electron detectors being especially well suited to the technique. However even the fastest frame driven pixelated detectors still significantly limit the scan speed which can be used in 4D STEM, making the resulting data susceptible to drift and hampering its use for low dose beam sensitive applications. Here we report the development of the use of an event driven Timepix3 direct electron camera that allows us to overcome this bottleneck and achieve 4D STEM dwell times down to 100~ns; orders of magnitude faster than what has been possible with frame based readout. We characterise the detector for different acceleration voltages and show that the method is especially well suited for low dose imaging and promises rich datasets without compromising dwell time when compared to conventional STEM imaging. △ Less

Submitted 8 December, 2021; v1 submitted 6 July, 2021; originally announced July 2021.

$\textit{ab initio}$ description of bonding for transmission electron microscopy

Authors: Jacob Madsen, Timothy J. Pennycook, Toma Susi

Abstract: The simulation of transmission electron microscopy (TEM) images or diffraction patterns is often required to interpret their contrast and extract specimen features. This is especially true for high-resolution phase-contrast imaging of materials, but electron scattering simulations based on atomistic models are widely used in materials science and structural biology. Since electron scattering is do… ▽ More The simulation of transmission electron microscopy (TEM) images or diffraction patterns is often required to interpret their contrast and extract specimen features. This is especially true for high-resolution phase-contrast imaging of materials, but electron scattering simulations based on atomistic models are widely used in materials science and structural biology. Since electron scattering is dominated by the nuclear cores, the scattering potential is typically described by the widely applied independent atom model. This approximation is fast and fairly accurate, especially for scanning TEM (STEM) annular dark-field contrast, but it completely neglects valence bonding and its effect on the transmitting electrons. However, an emerging trend in electron microscopy is to use new instrumentation and methods to extract the maximum amount of information from each electron. This is evident in the increasing popularity of techniques such as 4D-STEM combined with ptychography in materials science, and cryogenic microcrystal electron diffraction in structural biology, where subtle differences in the scattering potential may be both measurable and contain additional insights. Thus, there is increasing interest in electron scattering simulations based on electrostatic potentials obtained from first principles, mainly via density functional theory, which was previously mainly required for holography. In this Review, we discuss the motivation and basis for these developments, survey the pioneering work that has been published thus far, and give our outlook for the future. We argue that a physically better justified $\textit{ab initio}$ description of the scattering potential is both useful and viable for an increasing number of systems, and we expect such simulations to steadily gain in popularity and importance. △ Less

Submitted 12 February, 2021; v1 submitted 14 October, 2020; originally announced October 2020.

Comments: 41 pages, 5 figures, 3 tables, 137 references

Report number: 113253

Journal ref: Ultramicroscopy (2021)

Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride

Authors: Hui Shan Wang, Lingxiu Chen, Kenan Elibol, Li He, Haomin Wang, Chen Chen, Chengxin Jiang, Chen Li, Tianru Wu, Chun Xiao Cong, Timothy J. Pennycook, Giacomo Argentero, Daoli Zhang, Kenji Watanabe, Takashi Taniguchi, Wenya Wei, Qinghong Yuan, Jannik C. Meyer, Xiaoming Xie

Abstract: The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific GNR in the lattice of hBN still remains an enormous challenge for present approaches. Here we developed a two step growth method and successfully achieved sub… ▽ More The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific GNR in the lattice of hBN still remains an enormous challenge for present approaches. Here we developed a two step growth method and successfully achieved sub 5 nm wide zigzag and armchair GNRs embedded in hBN, respectively. Further transport measurements reveal that the sub 7 nm wide zigzag GNRs exhibit openings of the band gap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap width relationship.This integrated lateral growth of edge specific GNRs in hBN brings semiconducting building blocks to atomically thin layer, and will provide a promising route to achieve intricate nanoscale electrical circuits on high quality insulating hBN substrates. △ Less

Submitted 27 September, 2020; originally announced September 2020.

Comments: 84 pages,46 figures

Journal ref: Nature Materials, 2020

Direct Imaging of Charge Redistribution due to Bonding at Atomic Resolution via Electron Ptychography

Authors: Gerardo T. Martinez, Benjamin X. Shi, Timothy C. Naginey, Lewys Jones, Colum M. O'Leary, Timothy J. Pennycook, Rebecca J. Nicholls, Jonathan R. Yates, Peter D. Nellist

Abstract: Phase imaging in electron microscopy is sensitive to the local potential, including charge redistribution from bonding. We demonstrate that electron ptychography provides the necessary sensitivity to detect this subtle effect by directly imaging the charge redistribution in single layer boron nitride. Residual aberrations can be measured and corrected post-collection, and simultaneous atomic numbe… ▽ More Phase imaging in electron microscopy is sensitive to the local potential, including charge redistribution from bonding. We demonstrate that electron ptychography provides the necessary sensitivity to detect this subtle effect by directly imaging the charge redistribution in single layer boron nitride. Residual aberrations can be measured and corrected post-collection, and simultaneous atomic number contrast imaging provides unambiguous sub-lattice identification. Density functional theory calculations confirm the detection of charge redistribution. △ Less

Submitted 15 October, 2023; v1 submitted 30 July, 2019; originally announced July 2019.

Scanning transmission electron microscopy under controlled low-pressure atmospheres

Authors: Gregor T. Leuthner, Stefan Hummel, Clemens Mangler, Timothy J. Pennycook, Toma Susi, Jannik C. Meyer, Jani Kotakoski

Abstract: Transmission electron microscopy (TEM) is carried out in vacuum to minimize the interaction of the imaging electrons with gas molecules while passing through the microscope column. Nevertheless, in typical devices, the pressure remains at 10^-7 mbar or above, providing a large number of gas molecules for the electron beam to crack, which can lead to structural changes in the sample. Here, we descr… ▽ More Transmission electron microscopy (TEM) is carried out in vacuum to minimize the interaction of the imaging electrons with gas molecules while passing through the microscope column. Nevertheless, in typical devices, the pressure remains at 10^-7 mbar or above, providing a large number of gas molecules for the electron beam to crack, which can lead to structural changes in the sample. Here, we describe experiments carried out in a modified scanning TEM (STEM) instrument, based on the Nion UltraSTEM 100. In this instrument, the base pressure at the sample is around 2x10^-10 mbar, and can be varied up to 10^-6 mbar through introduction of gases directly into the objective area while maintaining atomic resolution imaging conditions. We show that air leaked into the microscope column during the experiment is efficient in cleaning graphene samples from contamination, but ineffective in damaging the pristine lattice. Our experiments also show that exposure to O2 and H2O lead to a similar result, oxygen providing an etching effect nearly twice as efficient as water, presumably due to the two O atoms per molecule. H2 and N2 environments have no influence on etching. These results show that the residual gas environment in typical TEM instruments can have a large influence on the observations, and show that chemical etching of carbon-based structures can be effectively carried out with oxygen. △ Less

Submitted 24 January, 2019; v1 submitted 10 November, 2018; originally announced November 2018.

Comments: 15 pages, 7 figure

Structure evolution of hcp/ccp metal oxide interfaces in solid-state reactions

Authors: C. Li, G. Habler, T. Griffiths, A. Rečnik, P. Jeřábek, L. C. Götze, C. Mangler, T. J. Pennycook, J. Meyer, R. Abart

Abstract: The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl2O4 layers have been grown between Al2O3 and MgO, and the atomic structure of Al2O3/MgAl2O4 interfaces at different growth stages was characterized… ▽ More The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl2O4 layers have been grown between Al2O3 and MgO, and the atomic structure of Al2O3/MgAl2O4 interfaces at different growth stages was characterized using aberration-corrected scanning transmission electron microscopy. The oxygen sublattice transforms from hexagonal close-packed (hcp) stacking in Al2O3 to cubic close-packed (ccp) stacking in MgAl2O4. Partial dislocations associated with steps are observed at the interface. At the reaction-controlled early growth stages, such partial dislocations coexist with the edge dislocations. However, at the diffusion-controlled late growth stages, such partial dislocations are dominant. The observed structures indicate that progression of the Al2O3/MgAl2O4 interface into Al2O3 is accomplished by the glide of partial dislocations accompanied by the exchange of Al3+ and Mg2+ cations. The interface migration may be envisaged as a plane-by-plane zipper-like motion, which repeats along the interface facilitating its propagation. MgAl2O4 grains can adopt two crystallographic orientations with a twinning orientation relationship, and grow by dislocations gliding in opposite directions. Where the oppositely propagating partial dislocations and interface steps meet, interlinked twin boundaries and incoherent Σ3 grain boundaries form. The newly grown MgAl2O4 grains compete with each other, leading to a growth-selection and successive coarsening of the MgAl2O4 grains. This understanding could help to interpret the interface reaction or phase transformation of a wide range of materials that exhibit a similar hcp/ccp transition. △ Less

Submitted 19 December, 2018; v1 submitted 14 April, 2018; originally announced April 2018.

Journal ref: Acta Crystallographica Section A (2018). A74, 466-480

Efficient first principles simulation of electron scattering factors for transmission electron microscopy

Authors: Toma Susi, Jacob Madsen, Ursula Ludacka, Jens Jørgen Mortensen, Timothy J. Pennycook, Zhongbo Lee, Jani Kotakoski, Ute Kaiser, Jannik C. Meyer

Abstract: Electron microscopy is a powerful tool for studying the properties of materials down to their atomic structure. In many cases, the quantitative interpretation of images requires simulations based on atomistic structure models. These typically use the independent atom approximation that neglects bonding effects, which may, however, be measurable and of physical interest. Since all electrons and the… ▽ More Electron microscopy is a powerful tool for studying the properties of materials down to their atomic structure. In many cases, the quantitative interpretation of images requires simulations based on atomistic structure models. These typically use the independent atom approximation that neglects bonding effects, which may, however, be measurable and of physical interest. Since all electrons and the nuclear cores contribute to the scattering potential, simulations that go beyond this approximation have relied on computationally highly demanding all-electron calculations. Here, we describe a new method to generate ab initio electrostatic potentials when describing the core electrons by projector functions. Combined with an interface to quantitative image simulations, this implementation enables an easy and fast means to model electron microscopy images. We compare simulated transmission electron microscopy images and diffraction patterns to experimental data, showing an accuracy equivalent to earlier all-electron calculations at a much lower computational cost. △ Less

Submitted 29 October, 2018; v1 submitted 14 March, 2018; originally announced March 2018.

Comments: 10 pages, 5 figures, 2 tables

Atomic structure of intrinsic and electron-irradiation-induced defects in MoTe2

Authors: Kenan Elibol, Toma Susi, Giacomo Argentero, Mohammad Reza Ahmadpour Monazam, Timothy John Pennycook, Jannik C. Meyer, Jani Kotakoski

Abstract: Studying the atomic structure of intrinsic defects in two-dimensional transition metal dichalcogenides is difficult since they damage quickly under the intense electron irradiation in transmission electron microscopy (TEM). However, this can also lead to insights into the creation of defects and their atom-scale dynamics. We first show that MoTe 2 monolayers without protection indeed quickly degra… ▽ More Studying the atomic structure of intrinsic defects in two-dimensional transition metal dichalcogenides is difficult since they damage quickly under the intense electron irradiation in transmission electron microscopy (TEM). However, this can also lead to insights into the creation of defects and their atom-scale dynamics. We first show that MoTe 2 monolayers without protection indeed quickly degrade during scanning TEM (STEM) imaging, and discuss the observed atomic-level dynamics, including a transformation from the 1H phase into 1T', three-fold rotationally symmetric defects, and the migration of line defects between two 1H grains with a 60° misorientation. We then analyze the atomic structure of MoTe2 encapsulated between two graphene sheets to mitigate damage, finding the as-prepared material to contain an unexpectedly large concentration of defects. These include similar point defects (or quantum dots, QDs) as those created in the non-encapsulated material, and two different types of line defects (or quantum wires, QWs) that can be transformed from one to the other under electron irradiation. Our density functional theory simulations indicate that the QDs and QWs embedded in MoTe2 introduce new midgap states into the semiconducting material, and may thus be used to control its electronic and optical properties. Finally, the edge of the encapsulated material appears amorphous, possibly due to the pressure caused by the encapsulation. △ Less

Submitted 5 February, 2018; originally announced February 2018.

Comments: 33 pages, including 7 figures in manuscript and 9 figures in the supplementary information

Journal ref: Chem. Mater. 30, 1230-1238 (2018)

Buckyball sandwiches

Authors: Rasim Mirzayev, Kimmo Mustonen, Mohammad R. A. Monazam, Andreas Mittelberger, Timothy J. Pennycook, Clemens Mangler, Toma Susi, Jani Kotakoski, Jannik C. Meyer

Abstract: Two-dimensional (2D) materials have considerably expanded the field of materials science in the last decade. Even more recently, various 2D materials have been assembled into vertical van der Waals heterostacks, and it has been proposed to combine them with other low- dimensional structures to create new materials with hybridized properties. Here, we demonstrate the first direct images of a suspen… ▽ More Two-dimensional (2D) materials have considerably expanded the field of materials science in the last decade. Even more recently, various 2D materials have been assembled into vertical van der Waals heterostacks, and it has been proposed to combine them with other low- dimensional structures to create new materials with hybridized properties. Here, we demonstrate the first direct images of a suspended 0D/2D heterostructure incorporating $C_{60}$ molecules between two graphene layers in a buckyball sandwich structure. We find clean and ordered $C_{60}$ islands with thicknesses down to one molecule, shielded by the graphene layers from the microscope vacuum and partially protected from radiation damage during scanning transmission electron microscopy imaging. The sandwich structure serves as a 2D nanoscale reaction chamber allowing the analysis of the structure of the molecules and their dynamics at atomic resolution. △ Less

Submitted 19 June, 2017; originally announced June 2017.

Journal ref: Science Advances 09 Jun 2017: Vol. 3, no. 6, e1700176

Unraveling the 3D atomic structure of a suspended graphene/hBN van der Waals heterostructure

Authors: G. Argentero, A. Mittelberger, M. R. A. Monazam, Y. Cao, T. J. Pennycook, C. Mangler, C. Kramberger, J. Kotakoski, A. K. Geim, J. C. Meyer

Abstract: In this work we demonstrate that a free-standing van der Waals heterostructure, usually regarded as a flat object, can exhibit an intrinsic buckled atomic structure resulting from the interaction between two layers with a small lattice mismatch. We studied a freely suspended membrane of well aligned graphene on a hexagonal boron nitride (hBN) monolayer by transmission electron microscopy (TEM) and… ▽ More In this work we demonstrate that a free-standing van der Waals heterostructure, usually regarded as a flat object, can exhibit an intrinsic buckled atomic structure resulting from the interaction between two layers with a small lattice mismatch. We studied a freely suspended membrane of well aligned graphene on a hexagonal boron nitride (hBN) monolayer by transmission electron microscopy (TEM) and scanning TEM (STEM). We developed a detection method in the STEM that is capable of recording the direction of the scattered electron beam and that is extremely sensitive to the local stacking of atoms. Comparison between experimental data and simulated models shows that the heterostructure effectively bends in the out-of-plane direction, producing an undulated structure having a periodicity that matches the moiré wavelength. We attribute this rippling to the interlayer interaction and also show how this affects the intralayer strain in each layer. △ Less

Submitted 9 February, 2017; originally announced February 2017.

Comments: 21 pages, 5 figures

Computational insights and the observation of SiC nanograin assembly: towards 2D silicon carbide

Authors: Toma Susi, Viera Skakalova, Andreas Mittelberger, Peter Kotrusz, Martin Hulman, Timothy J. Pennycook, Clemens Mangler, Jani Kotakoski, Jannik C. Meyer

Abstract: While an increasing number of two-dimensional (2D) materials, including graphene and silicene, have already been realized, others have only been predicted. An interesting example is the two-dimensional form of silicon carbide (2D-SiC). Here, we present an observation of atomically thin and hexagonally bonded nanosized grains of SiC assembling temporarily in graphene oxide pores during an atomic re… ▽ More While an increasing number of two-dimensional (2D) materials, including graphene and silicene, have already been realized, others have only been predicted. An interesting example is the two-dimensional form of silicon carbide (2D-SiC). Here, we present an observation of atomically thin and hexagonally bonded nanosized grains of SiC assembling temporarily in graphene oxide pores during an atomic resolution scanning transmission electron microscopy experiment. Even though these small grains do not fully represent the bulk crystal, simulations indicate that their electronic structure already approaches that of 2D-SiC. This is predicted to be flat, but some doubts have remained regarding the preference of Si for sp$^{3}$ hybridization. Exploring a number of corrugated morphologies, we find completely flat 2D-SiC to have the lowest energy. We further compute its phonon dispersion, with a Raman-active transverse optical mode, and estimate the core level binding energies. Finally, we study the chemical reactivity of 2D-SiC, suggesting it is like silicene unstable against molecular absorption or interlayer linking. Nonetheless, it can form stable van der Waals-bonded bilayers with either graphene or hexagonal boron nitride, promising to further enrich the family of two-dimensional materials once bulk synthesis is achieved. △ Less

Submitted 15 November, 2018; v1 submitted 25 January, 2017; originally announced January 2017.

Comments: 10 pages, 5 figures, 4 supplementary figures

Grain boundary-mediated nanopores in molybdenum disulfide grown by chemical vapor deposition

Authors: Kenan Elibol, Toma Susi, Maria O'Brien, Bernhard C. Bayer, Timothy J. Pennycook, Niall McEvoy, Georg S. Duesberg, Jannik C. Meyer, Jani Kotakoski

Abstract: Molybdenum disulfide (MoS2) is a particularly interesting member of the family of two-dimensional (2D) materials due to its semiconducting and tunable electronic properties. Currently, the most reliable method for obtaining high-quality industrial scale amounts of 2D materials is chemical vapor deposition (CVD), which results in polycrystalline samples. As grain boundaries (GBs) are intrinsic defe… ▽ More Molybdenum disulfide (MoS2) is a particularly interesting member of the family of two-dimensional (2D) materials due to its semiconducting and tunable electronic properties. Currently, the most reliable method for obtaining high-quality industrial scale amounts of 2D materials is chemical vapor deposition (CVD), which results in polycrystalline samples. As grain boundaries (GBs) are intrinsic defect lines within CVD-grown 2D materials, their atomic structure is of paramount importance. Here, through atomic-scale analysis of micrometer-long GBs, we show that covalently bound boundaries in 2D MoS2 tend to be decorated by nanopores. Such boundaries occur when differently oriented MoS2 grains merge during growth, whereas the overlap of grains leads to boundaries with bilayer areas. Our results suggest that the nanopore formation is related to stress release in areas with a high concentration of dislocation cores at the grain boundaries, and that the interlayer interaction leads to intrinsic rippling at the overlap regions. This provides insights for the controlled fabrication of large-scale MoS 2 samples with desired structural properties for applications. △ Less

Submitted 22 December, 2016; originally announced December 2016.

Comments: 26 pages, including supplementary material

Journal ref: Nanoscale 9, 1591-1598 (2017)

Single-atom spectroscopy of phosphorus dopants implanted into graphene

Authors: Toma Susi, Trevor P. Hardcastle, Hans Hofsäss, Andreas Mittelberger, Timothy J. Pennycook, Clemens Mangler, Rik Drummond-Brydson, Andrew J. Scott, Jannik C. Meyer, Jani Kotakoski

Abstract: One of the keys behind the success of the modern semiconductor technology has been the ion implantation of silicon, which allows its electronic properties to be tailored. For similar purposes, heteroatoms have been introduced into carbon nanomaterials both during growth and using post-growth methods. However, due to the nature of the samples, it has been challenging to determine whether the hetero… ▽ More One of the keys behind the success of the modern semiconductor technology has been the ion implantation of silicon, which allows its electronic properties to be tailored. For similar purposes, heteroatoms have been introduced into carbon nanomaterials both during growth and using post-growth methods. However, due to the nature of the samples, it has been challenging to determine whether the heteroatoms have been incorporated into the lattice as intended, with direct observations so far being limited to N and B dopants, and incidental Si impurities. Furthermore, ion implantation of these materials is more challenging due to the requirement of very low ion energies and atomically clean surfaces. Here, we provide the first atomic-resolution imaging and electron energy loss spectroscopy (EELS) evidence of phosphorus atoms incorporated into the graphene lattice by low-energy ion irradiation. The measured P L-edge response of an single-atom EELS spectrum map shows excellent agreement with an ab initio spectrum simulation, conclusively identifying the P in a buckled substitutional configuration. Our results demonstrate the viability of phosphorus as a lattice dopant in $sp^2$-bonded carbon structures and provide its unmistakeable fingerprint for further studies. △ Less

Submitted 11 October, 2016; originally announced October 2016.

Comments: 15 pages, 5 figures

Isotope analysis in the transmission electron microscope

Authors: Toma Susi, Christoph Hofer, Giacomo Argentero, Gregor T. Leuthner, Timothy J. Pennycook, Clemens Mangler, Jannik C. Meyer, Jani Kotakoski

Abstract: The Ångström-sized probe of the scanning transmission electron microscope can visualize and collect spectra from single atoms. This can unambiguously resolve the chemical structure of materials, but not their isotopic composition. Here we differentiate between two isotopes of the same element by quantifying how likely the energetic imaging electrons are to eject atoms. First, we measure the displa… ▽ More The Ångström-sized probe of the scanning transmission electron microscope can visualize and collect spectra from single atoms. This can unambiguously resolve the chemical structure of materials, but not their isotopic composition. Here we differentiate between two isotopes of the same element by quantifying how likely the energetic imaging electrons are to eject atoms. First, we measure the displacement probability in graphene grown from either $^{12}$C or $^{13}$C and describe the process using a quantum mechanical model of lattice vibrations coupled with density functional theory simulations. We then test our spatial resolution in a mixed sample by ejecting individual atoms from nanoscale areas spanning an interface region that is far from atomically sharp, mapping the isotope concentration with a precision better than 20%. Although we use a scanning instrument, our method should be applicable to any atomic resolution transmission electron microscope and to other low-dimensional materials. △ Less

Submitted 16 August, 2016; originally announced August 2016.

Comments: 35 pages, 6 figures, 1 table

Raman Characterization of Platinum Diselenide Thin Films

Authors: Maria O'Brien, Niall McEvoy, Carlo Motta, Jian-Yao Zheng, Nina C. Berner, Jani Kotakoski, Kenan Elibol, Timothy J. Pennycook, Jannik C. Meyer, Chanyoung Yim, Mohamed Abid, Toby Hallam, John F. Donegan, Stefano Sanvito, Georg S. Duesberg

Abstract: Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film t… ▽ More Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film thickness, laser wavelength and laser polarization. Eg and A1g Raman active modes were identified using polarization measurements in the Raman setup. These modes were found to display a clear position and intensity dependence with film thickness, for multiple excitation wavelengths, and their peak positions agree with simulated phonon dispersion curves for PtSe2. These results highlight the practicality of using Raman spectroscopy as a prime characterization technique for newly-synthesized 2D materials. △ Less

Submitted 31 December, 2015; originally announced December 2015.

High On/Off Ratio Memristive Switching of Manganite-Cuprate Bilayer by Interfacial Magnetoelectricity

Authors: Xiao Shen, Timothy J. Pennycook, David Hernandez-Martin, Ana Pérez, Maria Varela, Yevgeniy S. Puzyrev, Carlos Leon, Zouhair Sefrioui, Jacobo Santamaria, Sokrates T. Pantelides

Abstract: Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control. Memristors based on alternative mechanisms have been explored, but achieving both the high On/Off ratio and the low switching energy desirable for use in el… ▽ More Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control. Memristors based on alternative mechanisms have been explored, but achieving both the high On/Off ratio and the low switching energy desirable for use in electronics remains a challenge. Here we report memristive switching in a La0.7Ca0.3MnO3/PrBa2Cu3O7 bilayer with an On/Off ratio greater than 10^3 and demonstrate that the phenomenon originates from a new type of interfacial magnetoelectricity. Using results from first-principles calculations, we show that an external electric-field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic "dead" layer, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost about of a tenth of atto Joule for write/erase a "bit". Our results indicate new opportunities for manganite/cuprate systems and other transition-metal-oxide junctions in memristive applications. △ Less

Submitted 12 March, 2015; originally announced March 2015.

Journal ref: Advanced Materials Interfaces 3, 1600086 (2016)