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MoMa: A Modular Deep Learning Framework for Material Property Prediction
Authors:
Botian Wang,
Yawen Ouyang,
Yaohui Li,
Yiqun Wang,
Haorui Cui,
Jianbing Zhang,
Xiaonan Wang,
Wei-Ying Ma,
Hao Zhou
Abstract:
Deep learning methods for material property prediction have been widely explored to advance materials discovery. However, the prevailing pre-train then fine-tune paradigm often fails to address the inherent diversity and disparity of material tasks. To overcome these challenges, we introduce MoMa, a Modular framework for Materials that first trains specialized modules across a wide range of tasks…
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Deep learning methods for material property prediction have been widely explored to advance materials discovery. However, the prevailing pre-train then fine-tune paradigm often fails to address the inherent diversity and disparity of material tasks. To overcome these challenges, we introduce MoMa, a Modular framework for Materials that first trains specialized modules across a wide range of tasks and then adaptively composes synergistic modules tailored to each downstream scenario. Evaluation across 17 datasets demonstrates the superiority of MoMa, with a substantial 14% average improvement over the strongest baseline. Few-shot and continual learning experiments further highlight MoMa's potential for real-world applications. Pioneering a new paradigm of modular material learning, MoMa will be open-sourced to foster broader community collaboration.
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Submitted 17 March, 2025; v1 submitted 21 February, 2025;
originally announced February 2025.
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An extreme value statistics model of heterogeneous ice nucleation for quantifying the stability of supercooled aqueous systems
Authors:
Anthony N. Consiglio,
Yu Ouyang,
Matthew J. Powell-Palm,
Boris Rubinsky
Abstract:
The propensity of water to remain in a metastable liquid state at temperatures below its equilibrium melting point holds significant potential for cryopreserving biological material such as tissues and organs. The benefits conferred are a direct result of progressively reducing metabolic expenditure due to colder temperatures while simultaneously avoiding the irreversible damage caused by the crys…
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The propensity of water to remain in a metastable liquid state at temperatures below its equilibrium melting point holds significant potential for cryopreserving biological material such as tissues and organs. The benefits conferred are a direct result of progressively reducing metabolic expenditure due to colder temperatures while simultaneously avoiding the irreversible damage caused by the crystallization of ice. Unfortunately, the freezing of water in bulk systems of clinical relevance is dominated by random heterogeneous nucleation initiated by uncharacterized trace impurities, and the marked unpredictability of this behavior has prevented implementation of supercooling outside of controlled laboratory settings and in volumes larger than a few milliliters. Here, we develop a statistical model that jointly captures both the inherent stochastic nature of nucleation using conventional Poisson statistics as well as the random variability of heterogeneous nucleation catalysis through bivariate extreme value statistics. Individually, these two classes of models cannot account for both the time-dependent nature of nucleation and the sample-to-sample variability associated with heterogeneous catalysis, and traditional extreme value models have only considered variation of the characteristic nucleation temperature. We conduct a series of constant cooling rate and isothermal nucleation experiments with physiological saline solutions and leverage the statistical model to evaluate the natural variability of kinetic and thermodynamic nucleation parameters. By quantifying freezing probability as a function of temperature, supercooled duration, and system volume, while accounting for nucleation site variability, this study also provides a basis for the rational design of stable supercooled biopreservation protocols.
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Submitted 20 April, 2023;
originally announced April 2023.
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Fano Interference in a Single-Molecule Junction
Authors:
Yiping Ouyang,
Rui Wang,
Deping Guo,
Yang-Yang Ju,
Danfeng Pan,
Xuecou Tu,
Lin Kang,
Jian Chen,
Peiheng Wu,
Xuefeng Wang,
Jianguo Wan,
Minhao Zhang,
Wei Ji,
Yuan-Zhi Tan,
Su-Yuan Xie,
Fengqi Song
Abstract:
Trends of miniaturized devices and quantum interference electronics lead to the long desire of Fano interference in single-molecule junctions, here, which is successfully demonstrated using the 2,7-di(4-pyridyl)-9,9'-spirobifluorene molecule with a long backbone group and a short side group. Experimentally, the two electrically coupled groups are found to contribute to two blurred degenerate point…
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Trends of miniaturized devices and quantum interference electronics lead to the long desire of Fano interference in single-molecule junctions, here, which is successfully demonstrated using the 2,7-di(4-pyridyl)-9,9'-spirobifluorene molecule with a long backbone group and a short side group. Experimentally, the two electrically coupled groups are found to contribute to two blurred degenerate points in the differential conductance mapping. This forms a characteristic non-centrosymmetric double-crossing feature, with distinct temperature response for each crossing. Theoretically, we describe the practical in-junction electron transmission using a new two-tunnelling-channel coupling model and obtain a working formula with a Fano term and a Breit-Wigner term. The formula is shown to provide a good fit for all the mapping data and their temperature dependence in three dimensions, identifying the Fano component. Our work thus forms a complete set of evidence of the Fano interference in a single-molecule junction induced by two-tunnelling-channel coupling transport. Density functional theory calculations are used to corroborate this new physics.
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Submitted 18 August, 2022;
originally announced August 2022.
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Projection of Infinite-$U$ Hubbard Model and Algebraic Sign Structure
Authors:
Yunqing Ouyang,
Xiao Yan Xu
Abstract:
We propose a projection approach to perform quantum Monte Carlo (QMC) simulation on the infinite-$U$ Hubbard model at some integer fillings where either it is sign problem free or surprisingly has an algebraic sign structure -- a power law dependence of average sign on system size. We demonstrate our scheme on the infinite-$U$ $SU(2N)$ fermionic Hubbard model on both a square and honeycomb lattice…
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We propose a projection approach to perform quantum Monte Carlo (QMC) simulation on the infinite-$U$ Hubbard model at some integer fillings where either it is sign problem free or surprisingly has an algebraic sign structure -- a power law dependence of average sign on system size. We demonstrate our scheme on the infinite-$U$ $SU(2N)$ fermionic Hubbard model on both a square and honeycomb lattice at half-filling, where it is sign problem free, and suggest possible correlated ground states. The method can be generalized to study certain extended Hubbard models applying to cluster Mott insulators or two-dimensional Moiré systems; among one of them at certain non-half-integer filling, the sign has an algebraic behavior such that it can be numerically solved within a polynomial time. Further, our projection scheme can also be generalized to implement the Gutzwiller projection to spin basis such that $SU(2N)$ quantum spin models and Kondo lattice models may be studied in the framework of fermionic QMC simulations.
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Submitted 12 December, 2021; v1 submitted 10 August, 2021;
originally announced August 2021.
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Constructing quantum codes from any classical code and their embedding in ground space of local Hamiltonians
Authors:
Ramis Movassagh,
Yingkai Ouyang
Abstract:
Implementing robust quantum error correction (QEC) is imperative for harnessing the promise of quantum technologies. We introduce a framework that takes {\it any} classical code and explicitly constructs the corresponding QEC code. Our framework can be seen to generalize the CSS codes, and goes beyond the stabilizer formalism~(Fig.~1). A concrete advantage is that the desirable properties of a cla…
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Implementing robust quantum error correction (QEC) is imperative for harnessing the promise of quantum technologies. We introduce a framework that takes {\it any} classical code and explicitly constructs the corresponding QEC code. Our framework can be seen to generalize the CSS codes, and goes beyond the stabilizer formalism~(Fig.~1). A concrete advantage is that the desirable properties of a classical code are automatically incorporated in the design of the resulting quantum code. We reify the theory by various illustrations some of which outperform the best previous constructions. We then introduce a local quantum spin-chain Hamiltonian whose ground space we analytically completely characterize. We utilize our framework to demonstrate that the ground space contains explicit quantum codes with linear distance. This side-steps the Bravyi-Terhal no-go theorem.
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Submitted 22 November, 2024; v1 submitted 2 December, 2020;
originally announced December 2020.
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Computing classification of interacting fermionic symmetry-protected topological phases using topological invariants
Authors:
Yunqing Ouyang,
Qing-Rui Wang,
Zheng-Cheng Gu,
Yang Qi
Abstract:
In recent years, great success has been achieved on the classification of symmetry-protected topological (SPT) phases for interacting fermion systems by using generalized cohomology theory. However, the explicit calculation of generalized cohomology theory is extremely hard due to the difficulty of computing obstruction functions. In this paper, based on the physical picture of topological invaria…
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In recent years, great success has been achieved on the classification of symmetry-protected topological (SPT) phases for interacting fermion systems by using generalized cohomology theory. However, the explicit calculation of generalized cohomology theory is extremely hard due to the difficulty of computing obstruction functions. In this paper, based on the physical picture of topological invariants and mathematical techniques in homotopy algebra, we develop an algorithm to resolve this hard problem. It is well known that cochains in the cohomology of the symmetry group, which are used to enumerate the SPT phases, can be expressed equivalently in different linear bases, known as the resolutions. By expressing the cochains in a reduced resolution containing much fewer basis than the choice commonly used in previous studies, the computational cost is drastically reduced. In particular, it reduces the computational cost for infinite discrete symmetry groups, like the wallpaper groups and space groups, from infinity to finity. As examples, we compute the classification of two-dimensional interacting fermionic SPT phases, for all 17 wallpaper symmetry groups
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Submitted 8 December, 2021; v1 submitted 13 May, 2020;
originally announced May 2020.
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Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device
Authors:
Shuai Zhang,
Rui Wang,
Xuepeng Wang,
Boyuan Wei,
Huaiqiang Wang,
Gang Shi,
Feng Wang,
Bin Jia,
Yiping Ouyang,
Bo Chen,
Qianqian Liu,
Faji Xie,
Fucong Fei,
Minhao Zhang,
Xuefeng Wang,
Di Wu,
Xiangang Wan,
Fengqi Song,
Haijun Zhang,
Baigeng Wang
Abstract:
Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero and changes to a reversed sign. The reversed AHE exhibits distinct coercive fields and temperature dependence from the previous AHE. It reaches the maximum ins…
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Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero and changes to a reversed sign. The reversed AHE exhibits distinct coercive fields and temperature dependence from the previous AHE. It reaches the maximum inside the gap of the Dirac cone. The newly-seen reversed AHE is attributed to the competition of the intrinsic Berry curvature and the Dirac-gap enhanced extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors.
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Submitted 12 May, 2019;
originally announced May 2019.
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Equivalent-neighbor percolation models in two dimensions: crossover between mean-field and short-range behavior
Authors:
Yunqing Ouyang,
Youjin Deng,
Henk W. J. Blöte
Abstract:
We investigate the influence of the range of interactions in the two-dimensional bond percolation model, by means of Monte Carlo simulations. We locate the phase transitions for several interaction ranges, as expressed by the number $z$ of equivalent neighbors. We also consider the $z \to \infty$ limit, i.e., the complete graph case, where percolation bonds are allowed between each pair of sites,…
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We investigate the influence of the range of interactions in the two-dimensional bond percolation model, by means of Monte Carlo simulations. We locate the phase transitions for several interaction ranges, as expressed by the number $z$ of equivalent neighbors. We also consider the $z \to \infty$ limit, i.e., the complete graph case, where percolation bonds are allowed between each pair of sites, and the model becomes mean-field-like. All investigated models with finite $z$ are found to belong to the short-range universality class. There is no evidence of a tricritical point separating the short-range and long-range behavior, such as is known to occur for $q=3$ and $q=4$ Potts models. We determine the renormalization exponent describing a finite-range perturbation at the mean-field limit as $y_r \approx 2/3$. Its relevance confirms the continuous crossover from mean-field percolation universality to short-range percolation universality. For finite interaction ranges, we find approximate relations between the coordination numbers and the amplitudes of the leading correction terms as found in the finite-size scaling analysis.
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Submitted 17 August, 2018;
originally announced August 2018.
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Computing spectral bounds of the Heisenberg ferromagnet from geometric considerations
Authors:
Yingkai Ouyang
Abstract:
We give a polynomial-time algorithm for computing upper bounds on some of the smaller energy eigenvalues in a spin-1/2 ferromagnetic Heisenberg model with any graph $G$ for the underlying interactions. An important ingredient is the connection between Heisenberg models and the symmetric products of $G$. Our algorithms for computing upper bounds are based on generalized diameters of graphs. Computi…
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We give a polynomial-time algorithm for computing upper bounds on some of the smaller energy eigenvalues in a spin-1/2 ferromagnetic Heisenberg model with any graph $G$ for the underlying interactions. An important ingredient is the connection between Heisenberg models and the symmetric products of $G$. Our algorithms for computing upper bounds are based on generalized diameters of graphs. Computing the upper bounds amounts to solving the minimum assignment problem on $G$, which has well-known polynomial-time algorithms from the field of combinatorial optimization. We also study the possibility of computing the lower bounds on some of the smaller energy eigenvalues of Heisenberg models. This amounts to estimating the isoperimetric inequalities of the symmetric product of graphs. By using connections with discrete Sobolev inequalities, we show that this can be performed by considering just the vertex-induced subgraphs of $G$. If our conjecture for a polynomial time approximation algorithm to solve the edge-isoperimetric problem holds, then our proposed method of estimating the energy eigenvalues via approximating the edge-isoperimetric properties of vertex-induced subgraphs will yield a polynomial time algorithm for estimating the smaller energy eigenvalues of the Heisenberg ferromagnet.
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Submitted 18 May, 2019; v1 submitted 8 July, 2017;
originally announced July 2017.
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New record of high ZT found in hybrid transition-metal-dichalcogenides
Authors:
Yulou Ouyang,
Yuee Xie,
Zhongwei Zhang,
Qing Peng,
Yuanping Chen
Abstract:
The search for thermoelectrics with higher figures of merit (ZT) will never stop due to the demand of heat harvesting. Single layer transition metal dichalcogenides (TMD), namely MX2 (where M is a transition metal and X is a chalcogen) that have electronic band gaps are among the new materials that have been the focus of such research. Here, we investigate the thermoelectric transport properties o…
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The search for thermoelectrics with higher figures of merit (ZT) will never stop due to the demand of heat harvesting. Single layer transition metal dichalcogenides (TMD), namely MX2 (where M is a transition metal and X is a chalcogen) that have electronic band gaps are among the new materials that have been the focus of such research. Here, we investigate the thermoelectric transport properties of hybrid armchair-edged TMDs nanoribbons, by using the nonequilibrium Green's function technique combined with the first principles and molecular dynamics methods. We find a ZT as high as 7.4 in hybrid MoS2/MoSe2 nanoribbons at 800K, creating a new record for ZT. Moreover, the hybrid interfaces by substituting X atoms are more efficient than those by substituting M atoms to tune the ZT. The origin of such a high ZT of hybrid nanoribbons is the high density of the grain boundaries: the hybrid interfaces decrease thermal conductance drastically without a large penalty to electronic conductance.
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Submitted 15 December, 2016;
originally announced December 2016.
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A systematic investigation of thermal conductivities of transition metal dichalcogenides
Authors:
Zhongwei Zhang,
Yuee Xie,
Yulou Ouyang,
Yuanping Chen
Abstract:
The thermal conductivities of MoS2 and WS2 have been reported by some experimental and theoretical studies, however, the results are different from each other. Here, thermal transport properties of twelve types of single layer transition metal dichalcogenides (TMDs) MX2 (M = Cr, Mo, W; X = O, S, Se, Te) are investigated systematically, by solving Boltzmann transport equation based on first-princip…
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The thermal conductivities of MoS2 and WS2 have been reported by some experimental and theoretical studies, however, the results are different from each other. Here, thermal transport properties of twelve types of single layer transition metal dichalcogenides (TMDs) MX2 (M = Cr, Mo, W; X = O, S, Se, Te) are investigated systematically, by solving Boltzmann transport equation based on first-principle calculations. After accurate considering the size effect and boundary scattering, we find that our calculations can fit the former experimental results well. Moreover, diverse transport properties in TMDs are revealed, and an abnormal dependence of thermal conductivity on atomic mass is observed. In most MX2 structures, the thermal conductivities decrease with the increase of mass of atom M or X. However, the thermal conductivities of sulfides MS2 and selenides MSe2 increase as M changes from Cr to Mo to W, which is contradictory to our traditional understanding. A detailed calculation indicates that the abnormal trend is originated from the rapid increase of phonon relaxation time. Our studies provide important data and effective mechanism for thermal transport in TMDs.
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Submitted 15 December, 2016;
originally announced December 2016.
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First-principles study of the stability of free-standing germanene in oxygen
Authors:
G. Liu,
S. B. Liu,
B. Xu,
C. Y. Ouyang,
H. Y. Song,
X. L. Li
Abstract:
The O2 dissociation and O atoms adsorption on free-standing germanene are studied by using first-principles calculations in this letter. Compared with the spontaneous dissociation of oxygen molecule on free-standing silicene in air, germanene is more stable than silicene from kinetic point of view, with overcoming energy barrier of about 0.55 eV. Especially, in contrast with the unique chemical ad…
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The O2 dissociation and O atoms adsorption on free-standing germanene are studied by using first-principles calculations in this letter. Compared with the spontaneous dissociation of oxygen molecule on free-standing silicene in air, germanene is more stable than silicene from kinetic point of view, with overcoming energy barrier of about 0.55 eV. Especially, in contrast with the unique chemical adsorption of O2-dissociation-induced O atoms on silicene, oxygen molecule can behave a correspondingly stable adsorption on germanene surface. Moreover, single O atom adsorption on germanene is also different to that on silicene, resulting in two opposite migration pathways on germanene surface. Furthermore, once the oxygen molecule dissociates into O atoms on germanene surface, the migration and desorption of O atoms are relatively difficult under room temperature due to the strong Ge-O bonds in the O-adsorbed germanene, in favor of forming germanium oxides. The results provide compelling evidence to show that free-standing gemanene is relatively stable in oxygen,which is different to silicene essentially.
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Submitted 16 December, 2014;
originally announced December 2014.
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Is silicene stable in air? -- First principles study of oxygen adsorption and dissociation on silicene
Authors:
G. Liu,
X. L. Lei,
M. S. Wu,
B. Xu,
C. Y. OuYang
Abstract:
The oxygen adsorption and dissociation on pristine silicene surface are studied by use of first-principles in this letter. The oxygen adsorption and dissociation on pristine silicene surface are studied by use of first-principles in this letter. It is found that the pristine silicene is not stable in air because the oxygen molecule can be easily adsorbed and dissociated into two O atoms without ov…
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The oxygen adsorption and dissociation on pristine silicene surface are studied by use of first-principles in this letter. The oxygen adsorption and dissociation on pristine silicene surface are studied by use of first-principles in this letter. It is found that the pristine silicene is not stable in air because the oxygen molecule can be easily adsorbed and dissociated into two O atoms without overcoming any energy barrier on pristine silicene surface. In addition, dissociated oxygen atoms are relatively difficult to migrate on or desorbed from pristine silicene surface, leading to poor mobility of oxygen atom. As a result, silicene would be changed into Si-O compounds in air. The work will be helpful to reveal the detail of the interaction between oxygen molecules and pristine silicene surface, especially helpful to understand the stability of silicene in air.
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Submitted 25 October, 2013;
originally announced October 2013.
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Graphene Nanoribbons with Smooth Edges Behave as Quantum Wires
Authors:
Xinran Wang,
Yijian Ouyang,
Liying Jiao,
Hailiang Wang,
Liming Xie,
Justin Wu,
Jing Guo,
Hongjie Dai
Abstract:
Graphene nanoribbons with perfect edges are predicted to exhibit interesting electronic and spintronic properties, notably quantum-confined bandgaps and magnetic edge states. However, graphene nanoribbons produced by lithography have, to date, exhibited rough edges and low-temperature transport characteristics dominated by defects, mainly variable range hopping between localized states in a transp…
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Graphene nanoribbons with perfect edges are predicted to exhibit interesting electronic and spintronic properties, notably quantum-confined bandgaps and magnetic edge states. However, graphene nanoribbons produced by lithography have, to date, exhibited rough edges and low-temperature transport characteristics dominated by defects, mainly variable range hopping between localized states in a transport gap near the Dirac point. Here, we report that one- and two-layer nanoribbons quantum dots made by unzipping carbon nanotubes10 exhibit well-defined quantum transport phenomena, including Coulomb blockade, Kondo effect, clear excited states up to ~20meV, and inelastic co-tunnelling. Along with signatures of intrinsic quantum-confined bandgaps and high conductivities, our data indicate that the nanoribbons behave as clean quantum wires at low temperatures, and are not dominated by defects.
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Submitted 29 August, 2011;
originally announced August 2011.
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Effects of edge chemistry doping on graphene nanoribbon mobility
Authors:
Yijian Ouyang,
Stefano Sanvito,
Jing Guo
Abstract:
Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent experiments. The carrier mobility limited by edge doping is studied as a function of the GNR width, doping density, and carrier density by using ab initio density fu…
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Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent experiments. The carrier mobility limited by edge doping is studied as a function of the GNR width, doping density, and carrier density by using ab initio density functional and parameterized tight binding simulations combined with the non-equilibrium Green's function formalism for quantum transport. The results indicate that for GNRs wider than about 4nm, the mobility scales approximately linearly with the GNR width, inversely proportional to the edge doping concentration and decreases for an increasing carrier density. For narrower GNRs, dependence of the mobility on the GNR width and carrier density can be qualitatively different.
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Submitted 24 July, 2011;
originally announced July 2011.
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Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
Authors:
Leitao Liu,
S. Bala Kumar,
Yijian Ouyang,
Jing Guo
Abstract:
The performance limits of monolayer transition metal dichalcogenide transistors are examined with a ballistic MOSFET model. Using ab-initio theory, we calculate the band structures of two-dimensional (2D) transition metal dichalco-genide (MX2). We find the lattice structures of monolayer MX2 remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2 transistors…
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The performance limits of monolayer transition metal dichalcogenide transistors are examined with a ballistic MOSFET model. Using ab-initio theory, we calculate the band structures of two-dimensional (2D) transition metal dichalco-genide (MX2). We find the lattice structures of monolayer MX2 remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2 transistors are better compared to the silicon transistors if thin high-κ gate insulator is used. This makes monolayer MX2 promising 2D materials for future nanoelectronic device applications.
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Submitted 21 June, 2011;
originally announced June 2011.
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Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material
Authors:
Yijian Ouyang,
Hongjie Dai,
Jing Guo
Abstract:
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator and reduced interlayer coupling, multilayer GNR FET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic…
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The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator and reduced interlayer coupling, multilayer GNR FET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. The simulation results indicate multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidate for high performance GNR FETs.
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Submitted 10 December, 2009;
originally announced December 2009.
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Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
Authors:
Xinran Wang,
Yijian Ouyang,
Xiaolin Li,
Hailiang Wang,
Jing Guo,
Hongjie Dai
Abstract:
Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as ~2000uA/um. We estimated carrier mobility ~200cm2/Vs and scattering mean free path ~10nm in sub-10nm GNRs. Scattering mechanisms by edges, acoustic phonon and defec…
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Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as ~2000uA/um. We estimated carrier mobility ~200cm2/Vs and scattering mean free path ~10nm in sub-10nm GNRs. Scattering mechanisms by edges, acoustic phonon and defects are discussed. The sub-10nm GNRFETs are comparable to small diameter (d<=~1.2nm) carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices.
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Submitted 3 May, 2008; v1 submitted 24 March, 2008;
originally announced March 2008.
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Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons
Authors:
Jing Guo,
Youngki Yoon,
Yijian Ouyang
Abstract:
Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent atomistic simulations. The results indicate strong dependence of the GNR C-V characteristics on the edge shape. For zigzag edge GNRs, highly non-uniform charg…
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Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent atomistic simulations. The results indicate strong dependence of the GNR C-V characteristics on the edge shape. For zigzag edge GNRs, highly non-uniform charge distribution in the transverse direction due to edge states lowers the gate capacitance considerably, and the self-consistent electrostatic potential significantly alters the band structure and carrier velocity. For an armchair edge GNR, the quantum capacitance is a factor of 2 smaller than its corresponding zigzag carbon nanotube, and a multiple gate geometry is less beneficial for transistor applications. Magnetic field results in pronounced oscillations on C-V characteristics.
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Submitted 22 May, 2007;
originally announced May 2007.
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Effect of Phonon Scattering on Intrinsic Delay and Cut-Off Frequency of Carbon Nanotube FETs
Authors:
Youngki Yoon,
Yijian Ouyang,
Jing Guo
Abstract:
The effect of phonon scattering on the intrinsic delay and cut-off frequency of Schottky barrier carbon nanotube (CNT) FETs is examined by self-consistently solving the Poisson equation and the Schrodinger equation using the non-equilibrium Greens function (NEGF) formalism. Carriers are mostly scattered by optical and zone boundary phonons beyond the beginning of the channel. We show that the sc…
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The effect of phonon scattering on the intrinsic delay and cut-off frequency of Schottky barrier carbon nanotube (CNT) FETs is examined by self-consistently solving the Poisson equation and the Schrodinger equation using the non-equilibrium Greens function (NEGF) formalism. Carriers are mostly scattered by optical and zone boundary phonons beyond the beginning of the channel. We show that the scattering has a small direct effect on the DC on-current of the CNTFET, but it results in significant pile-up of charge and degradation of average carrier velocity. Due to charge pile-up and random walks of carriers, the intrinsic gate capacitance and delay significantly increase, and the intrinsic cut-off frequency decreases. The results are important for assessing the performance potential of CNTFETs for radio-frequency (RF) electronics and digital electronics applications.
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Submitted 3 July, 2006; v1 submitted 30 June, 2006;
originally announced July 2006.
