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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:0912.2140 (cond-mat)
[Submitted on 11 Dec 2009]

Title:Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material

Authors:Yijian Ouyang, Hongjie Dai, Jing Guo
View a PDF of the paper titled Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material, by Yijian Ouyang and 2 other authors
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Abstract: The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator and reduced interlayer coupling, multilayer GNR FET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. The simulation results indicate multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidate for high performance GNR FETs.
Comments: 22 pages, 6 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Other Condensed Matter (cond-mat.other)
Cite as: arXiv:0912.2140 [cond-mat.mes-hall]
  (or arXiv:0912.2140v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.0912.2140
arXiv-issued DOI via DataCite

Submission history

From: Yijian Ouyang [view email]
[v1] Fri, 11 Dec 2009 02:39:12 UTC (939 KB)
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