Showing 1–23 of 23 results for author: Myronov, M

Giant spin-to-charge conversion in germanium tin epilayers

Authors: S. Oyarzún, C. Gonzalez-Fuentes, Erick Burgos, M. Myronov, M. Jamet, R. L. Rodríguez-Suárez, F. Pezzoli

Abstract: We report a study of the spin-to-charge current conversion in compressively strained Ge1-xSnx alloy epilayers as a function of the Sn concentration by means of the inverse spin Hall effect (ISHE). The spin current is generated by spin-pumping effect (SPE) from a thin NiFe layer driven into ferromagnetic resonance (FMR). By simultaneously measuring the magnetic damping of the NiFe layer and the ISH… ▽ More We report a study of the spin-to-charge current conversion in compressively strained Ge1-xSnx alloy epilayers as a function of the Sn concentration by means of the inverse spin Hall effect (ISHE). The spin current is generated by spin-pumping effect (SPE) from a thin NiFe layer driven into ferromagnetic resonance (FMR). By simultaneously measuring the magnetic damping of the NiFe layer and the ISHE-induced charge current we extract two key spintronics parameters: the spin Hall angle and the effective spin mixing conductance. Our results reveal a giant spin-to-charge conversion and a non-monotonic dependence of the charge current signal on the Sn concentration, consistent with the variation in the magnetic damping observed in FMR. The values of spin Hall angle are comparable to those reported for heavy metals such as Pt and Ta. Furthermore, we show that the spin conductivity at the Au/GeSn interface can be enhanced by tuning the Sn concentration. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Comments: 15 pages, 4 figures

Optical control of the spin-Hall effect in a two-dimensional hole gas

Authors: Simone Rossi, Valentina Caprotti, Andrea Filippi, Emiliano Bonera, Jacopo Pedrini, Roberto Raimondi, Maksym Myronov, Fabio Pezzoli

Abstract: Relativistic effects influence the motion of charged particles in solids by intertwining spin and momentum. The resulting phenomena exhibit rich and intriguing properties that can unveil radically new quantum devices. In this context, the two-dimensional hole gas formed in group IV heterostructures is a particularly promising platform, owning to a notable spin-orbit coupling. However, the exploita… ▽ More Relativistic effects influence the motion of charged particles in solids by intertwining spin and momentum. The resulting phenomena exhibit rich and intriguing properties that can unveil radically new quantum devices. In this context, the two-dimensional hole gas formed in group IV heterostructures is a particularly promising platform, owning to a notable spin-orbit coupling. However, the exploitation of spin-momentum locking and precise manipulation of spin currents has remained elusive thus far. Here we use the modulation-doping technique to break inversion symmetry at novel Ge1-xSnx/Ge interfaces and explore spin-orbit phenomena in the emergent Rashba-coupled hole gases. Magneto-optical investigations demonstrate the unusual establishment of a staggered band alignment with carrier lifetime in the ns range. Optical spin orientation is then leveraged to directly inject spin-polarized currents in the Rashba-split 2D gas. Spin-to-charge conversion is shown to genuinely occur at the staggered gap through the inverse spin-Hall effect. This provides unprecedented access to low-order contributions of the spin-orbit Hamiltonian. Moreover, it leads to the startling demonstration that the spin Hall angle can be optically controlled by modifying the Rashba coupling through the photoexcitation density. Ge1-xSnx quantum wells thus offer innovative solutions and functionalities stemming from their unique spin-dependent properties and intriguing quantum phenomena at the crossroad between transport and photonic realms. △ Less

Submitted 7 March, 2025; originally announced March 2025.

Magneto-optical determination of the carrier lifetime in coherent Ge(1-x)Sn(x)/Ge heterostructures

Authors: Elisa Vitiello, Simone Rossi, Christopher A. Broderick, Giorgio Gravina, Andrea Balocchi, Xavier Marie, Eoin P. O'Reilly, Maksym Myronov, Fabio Pezzoli

Abstract: We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dy… ▽ More We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under steady-state excitation to study the spin-dependent optical transitions in presence of an external magnetic field. This allowed us to obtain direct access to the dynamics of the optically-induced carrier population. Our approach singled out that at cryogenic temperatures the effective lifetime of the photogenerated carriers in coherent Ge(1-x)Sn(x) occurs in the sub-ns time scale. Supported by a model estimate of the radiative lifetime, our measurements indicate that carrier recombination is dominated by non-radiative processes. Our results thus provide central information to advance the fundamental understanding of carrier kinetics in this novel direct-gap group-IV material system. Such knowledge can be a stepping stone in the quest for the implementation of Ge(1-x)Sn(x)-based functional devices. △ Less

Submitted 2 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Applied 14, 064068 (2020)

The germanium quantum information route

Authors: Giordano Scappucci, Christoph Kloeffel, Floris A. Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, Menno Veldhorst

Abstract: In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairi… ▽ More In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairing correlations. In this Review, we initially introduce the physics of holes in low-dimensional germanium structures with key insights from a theoretical perspective. We then examine the material science progress underpinning germanium-based planar heterostructures and nanowires. We review the most significant experimental results demonstrating key building blocks for quantum technology, such as an electrically driven universal quantum gate set with spin qubits in quantum dots and superconductor-semiconductor devices for hybrid quantum systems. We conclude by identifying the most promising prospects toward scalable quantum information processing. △ Less

Submitted 17 April, 2020; originally announced April 2020.

Journal ref: Nat Rev Mater (2020)

Ballistic one-dimensional holes with strong g-factor anisotropy in germanium

Authors: R. Mizokuchi, R. Maurand, F. Vigneau, M. Myronov, S. De Franceschi

Abstract: We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors, with absolute values below 1 in the quantum-well pl… ▽ More We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors, with absolute values below 1 in the quantum-well plane, and exceeding 10 out of plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step towards the realization of novel devices for applications in quantum spintronics. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Self-Organised Fractional Quantisation in a Hole Quantum Wire

Authors: Y. Gul, S. N. Holmes, M. Myronov, S. Kumar, M. Pepper

Abstract: We have investigated hole transport in one-dimensional quantum wires in strained germanium two-dimensional layers. The ballistic conductance characteristics show the regular quantised plateaux in units of n2e2/h, where n is an integer. Additionally, new quantised levels are formed which correspond to values of n = 1/4 reducing to 1/8 in the presence of a strong parallel magnetic field which lifts… ▽ More We have investigated hole transport in one-dimensional quantum wires in strained germanium two-dimensional layers. The ballistic conductance characteristics show the regular quantised plateaux in units of n2e2/h, where n is an integer. Additionally, new quantised levels are formed which correspond to values of n = 1/4 reducing to 1/8 in the presence of a strong parallel magnetic field which lifts the spin degeneracy but does not quantise the wavefunction. A further plateau is observed corresponding to n = 1/32 which does not change in the presence of a parallel magnetic field. These values indicate that the system is behaving as if charge was fractionalised with values e/2 and e/4, possible mechanisms are discussed. △ Less

Submitted 14 February, 2018; originally announced February 2018.

Comments: 12 pages, 4 figures

Journal ref: J. Phys.: Condens. Matter, 30,09LT01 (2018)

Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon

Authors: Sebastiano De Cesari, Andrea Balocchi, Elisa Vitiello, Pedram Jahandar, Emanuele Grilli, Thierry Amand, Xavier Marie, Maksym Myronov, Fabio Pezzoli

Abstract: Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between Zeeman-split levels under an external magnetic field. Our optical experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifeti… ▽ More Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between Zeeman-split levels under an external magnetic field. Our optical experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that approaches the ns regime at room temperature. Besides important insights into nonradiative recombination pathways, our findings disclose a rich spin physics in novel epitaxial structures directly grown on a conventional Si substrate. This introduces a viable route towards the synergic enrichment of the group IV semiconductor toolbox with advanced spintronics and photonic capabilities. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 99, 035202 (2019)

Landau polaritons in highly non-parabolic 2D gases in the ultra-strong coupling regime

Authors: Janine Keller, Giacomo Scalari, Felice Appugliese, Shima Rajabali, Mattias Beck, Johannes Haase, Christian A. Lehner, Werner Wegscheider, Michele Failla, Maksym Myronov, David R. Leadley, James Lloyd-Hughes, Pierre Nataf, Jerome Faist

Abstract: We probe ultra-strong light matter coupling between metallic terahertz metasurfaces and Landau-level transitions in high mobility 2D electron and hole gases. We utilize heavy-hole cyclotron resonances in strained Ge and electron cyclotron resonances in InSb quantum wells, both within highly non-parabolic bands, and compare our results to well known parabolic AlGaAs/GaAs quantum well (QW) systems.… ▽ More We probe ultra-strong light matter coupling between metallic terahertz metasurfaces and Landau-level transitions in high mobility 2D electron and hole gases. We utilize heavy-hole cyclotron resonances in strained Ge and electron cyclotron resonances in InSb quantum wells, both within highly non-parabolic bands, and compare our results to well known parabolic AlGaAs/GaAs quantum well (QW) systems. Tuning the coupling strength of the system by two methods, lithographically and by optical pumping, we observe a novel behavior clearly deviating from the standard Hopfield model previously verified in cavity quantum electrodynamics: an opening of a lower polaritonic gap. △ Less

Submitted 30 December, 2019; v1 submitted 25 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 101, 075301 (2020)

Bunches of misfit dislocations on the onset of relaxation of Si$_{0.4}$Ge$_{0.6}$/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

Authors: Vladimir Kaganer, Tatjana Ulyanenkova, Andrei Benediktovitch, Maksym Myronov, Alex Ulyanenkov

Abstract: The experimental x-ray diffraction patterns of a Si$_{0.4}$Ge$_{0.6}$/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an inhomogeneous distribution of 60$^\circ$ dislocations with dislocations arranged in bunches is needed to explain the experiment correctly. As a result of the dislocation bunching, the positions of the x-ray… ▽ More The experimental x-ray diffraction patterns of a Si$_{0.4}$Ge$_{0.6}$/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an inhomogeneous distribution of 60$^\circ$ dislocations with dislocations arranged in bunches is needed to explain the experiment correctly. As a result of the dislocation bunching, the positions of the x-ray diffraction peaks do not correspond to the average dislocation density but reveal less than a half of the actual relaxation. △ Less

Submitted 9 June, 2017; originally announced June 2017.

Journal ref: J. Appl. Phys. 122, 105302 (2017)

Hole weak anti-localization in a strained-Ge surface quantum well

Authors: R. Mizokuchi, P. Torresani, R. Maurand, M. Myronov, S. De Franceschi

Abstract: We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top… ▽ More We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top gate electrode. This behavior is consistent with a Rashba-type spin-orbit coupling whose strength is proportional to the perpendicular electric field, and hence to the carrier density. By fitting the weak anti-localization peak to a model including a dominant cubic spin-orbit coupling, we extract the characteristic transport time scales and a spin splitting energy of ~1 meV. Finally, we observe a weak anti-localization peak also for magnetic fields parallel to the quantum well and attribute this finding to a combined effect of surface roughness, Zeeman splitting, and virtual occupation of higher-energy hole subbands. △ Less

Submitted 12 April, 2017; v1 submitted 10 April, 2017; originally announced April 2017.

Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization

Authors: F. Herling, C. Morrison, C. S. Knox, S. Zhang, O. Newell, M. Myronov, E. H. Linfield, C. H. Marrows

Abstract: We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findi… ▽ More We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications. △ Less

Submitted 2 March, 2017; v1 submitted 30 October, 2016; originally announced October 2016.

Journal ref: Phys. Rev. B 95, 155307 (2017)

Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers

Authors: Fabio Pezzoli, Anna Giorgioni, David Patchett, Maksym Myronov

Abstract: GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for their temperature-dependent photoluminescence (PL) that is based upon the so far disregarded optical activity of dislocations. By working at the onset of plastic relaxation, which occurs whenever the epilayer releases the… ▽ More GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for their temperature-dependent photoluminescence (PL) that is based upon the so far disregarded optical activity of dislocations. By working at the onset of plastic relaxation, which occurs whenever the epilayer releases the strain accumulated during growth on the lattice mismatched substrate, we demonstrate that dislocation nucleation can be explicitly seen in the PL data. Notably, our findings point out that a monotonous thermal PL quenching can be observed in coherent films, in spite of the indirect nature of the GeSn bandgap. Our investigation, therefore, contributes to a deeper understanding of the recombination dynamics in this intriguing group IV alloy and offers insights into crucial phenomena shaping the light emission efficiency. △ Less

Submitted 2 September, 2016; originally announced September 2016.

Journal ref: ACS Photonics 3, 2004-2009 (2016)

Transport anisotropy in Ge quantum wells in the absence of quantum oscillations

Authors: Q. Shi, M. A. Zudov, C. Morrison, M. Myronov

Abstract: Recent study of a high-mobility 2D hole gas in a strained Ge quantum well revealed strong transport anisotropy in the quantum Hall regime when the magnetic field was tilted away from the sample normal. In the present study we demonstrate that the anisotropy persists to such high temperatures and filling factors that quantum oscillations are no longer observed. This finding rules out the formation… ▽ More Recent study of a high-mobility 2D hole gas in a strained Ge quantum well revealed strong transport anisotropy in the quantum Hall regime when the magnetic field was tilted away from the sample normal. In the present study we demonstrate that the anisotropy persists to such high temperatures and filling factors that quantum oscillations are no longer observed. This finding rules out the formation of a stripe phase as a possible origin for the observed anisotropy. However, we also show that the observed anisotropy is not consistent with other known anisotropies, such as those arising from finite thickness effects or surface roughness. △ Less

Submitted 16 November, 2015; originally announced November 2015.

Journal ref: Phys. Rev. B 92, 161405(R) (2015)

Strong Transport Anisotropy in a Ge/SiGe Quantum Well in Tilted Magnetic Fields

Authors: Q. Shi, M. A. Zudov, C. Morrison, M. Myronov

Abstract: We report on a strong transport anisotropy in a 2D hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed $3\times 10^4$. The anisotropy occurs in a wide range of filling factors where it is determined {\em primarily} by the tilt angle. The… ▽ More We report on a strong transport anisotropy in a 2D hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed $3\times 10^4$. The anisotropy occurs in a wide range of filling factors where it is determined {\em primarily} by the tilt angle. The lack of significant anisotropy without an in-plane field, easy tunability, and persistence to higher temperatures and filling factors set this anisotropy apart from nematic phases in GaAs/AlGaAs. △ Less

Submitted 16 November, 2015; originally announced November 2015.

Journal ref: Phys. Rev. B 91, 201301(R) (2015)

Spinless composite fermions in an ultra-high quality strained Ge quantum well

Authors: Q. Shi, M. A. Zudov, C. Morrison, M. Myronov

Abstract: We report on an observation of a fractional quantum Hall effect in an ultra-high quality two-dimensional hole gas hosted in a strained Ge quantum well. The Hall resistance reveals precisely quantized plateaus and vanishing longitudinal resistance at filling factors $ν= 2/3, 4/3$ and $5/3$. From the temperature dependence around $ν= 3/2$ we obtain the composite fermion mass of… ▽ More We report on an observation of a fractional quantum Hall effect in an ultra-high quality two-dimensional hole gas hosted in a strained Ge quantum well. The Hall resistance reveals precisely quantized plateaus and vanishing longitudinal resistance at filling factors $ν= 2/3, 4/3$ and $5/3$. From the temperature dependence around $ν= 3/2$ we obtain the composite fermion mass of $m^\star \approx 0.4\,m_e$, where $m_e$ is the mass of a free electron. Owing to large Zeeman energy, all observed states are spin-polarized and can be described in terms of spinless composite fermions. △ Less

Submitted 16 November, 2015; originally announced November 2015.

Journal ref: Phys. Rev. B 91, 241303(R) (2015)

An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers

Authors: Sergey Dushenko, Mariko Koike, Yuichiro Ando, Teruya Shinjo, Maksym Myronov, Masashi Shiraishi

Abstract: We report the first experimental demonstration of room-temperature spin transport in n-type Ge epilayers grown on a Si(001) substrate. By utilizing spin pumping under ferromagnetic resonance, which inherently endows a spin battery function for semiconductors connected with the ferromagnet, a pure spin current is generated in the n-Ge at room temperature. The pure spin current is detected by using… ▽ More We report the first experimental demonstration of room-temperature spin transport in n-type Ge epilayers grown on a Si(001) substrate. By utilizing spin pumping under ferromagnetic resonance, which inherently endows a spin battery function for semiconductors connected with the ferromagnet, a pure spin current is generated in the n-Ge at room temperature. The pure spin current is detected by using the inverse spin Hall effect of either Pt or Pd electrode on the n-Ge. A theoretical model including a geometrical contribution allows to estimate a spin diffusion length in n-Ge at room temperature to be 660 nm. The temperature dependence of the spin relaxation time provides evidence for Elliott-Yafet spin relaxation mechanism. △ Less

Submitted 27 January, 2015; originally announced January 2015.

Comments: 27 pages, 6 figures, Suppelmental Materials

Journal ref: Phys. Rev. Lett. 114, 196602 (2015)

A Strained Silicon Cold Electron Bolometer using Schottky Contacts

Authors: T. L. R. Brien, P. A. R. Ade, P. S. Barry, C. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H. C. Parker, M. Prunnila, M. J. Prest, R. V. Sudiwala, T. E. Whall, P. D. Mauskopf

Abstract: We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in… ▽ More We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to $160~\mathrm{GHz}$ and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of $50~\%$ for radiation coupled into the device by the planar antenna and an overall noise equivalent power (NEP), referred to absorbed optical power, of $1.1 \times 10^{-16}~\mathrm{\mbox{W Hz}^{-1/2}}$ when the detector is observing a $300~\mathrm{K}$ source through a $4~\mathrm{K}$ throughput limiting aperture. Even though this optical system is not optimised we measure a system noise equivalent temperature difference (NETD) of $6~\mathrm{\mbox{mK Hz}^{-1/2}}$. We measure the noise of the device using a cross-correlation of time stream data measured simultaneously with two junction field-effect transistor (JFET) amplifiers, with a base correlated noise level of $300~\mathrm{\mbox{pV Hz}^{-1/2}}$ and find that the total noise is consistent with a combination of photon noise, current shot noise and electron-phonon thermal noise. △ Less

Submitted 31 July, 2014; v1 submitted 8 July, 2014; originally announced July 2014.

Comments: Published in Applied Physics Letters, 105, pp. 043509

Journal ref: Brien et al., Applied Physics Letters, 105, 043509 (2014)

Optical absorption in highly-strained Ge/SiGe quantum wells: the role of Γ-to-Δ scattering

Authors: L. Lever, Z. Ikonić, A. Valavanis, R. W. Kelsall, M. Myronov, D. R. Leadley, Y. Hu, N. Owens, F. Y. Gardes, G. T. Reed

Abstract: We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch with the virtual substrate results in a blue shift of the direct absorption edge, as well as a reduction in the Γ-valley scattering lifetime because of… ▽ More We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch with the virtual substrate results in a blue shift of the direct absorption edge, as well as a reduction in the Γ-valley scattering lifetime because of strain-induced splittings of the conduction band valleys. We investigate theoretically the Γ-valley carrier lifetimes by evaluating the Γ-to-L and Γ-to-Δ scattering rates in strained Ge/SiGe semiconductor heterostructures. These scattering rates are used to determine the lifetime broadening of excitonic peaks and the indirect absorption in simulated absorption spectra, which are compared with measured absorption spectra for quantum well structures with systematically-varied dimensions. We find that Γ-to-Δ scattering is significant in compressively strained Ge quantum wells and that the Γ-valley electron lifetime is less than 50 fs in the highly-strained structures reported here, where Γ-to-Δ scattering accounted for approximately half of the total scattering rate. △ Less

Submitted 28 February, 2013; originally announced February 2013.

Comments: 8 pages, 8 figures

Journal ref: Journal of Applied Physics 112(12):123105-123105-7 (2012)

Strain enhanced electron cooling in a degenerately doped semiconductor

Authors: M. J. Prest, J. T. Muhonen, M. Prunnila, D. Gunnarsson, V. A. Shah, J. S. Richardson-Bullock, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E. H. C. Parker, D. R. Leadley

Abstract: Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cool… ▽ More Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate. △ Less

Submitted 18 November, 2011; v1 submitted 2 November, 2011; originally announced November 2011.

Comments: 3 pages, 5 figures

Journal ref: Applied Physics Letters 99, 251908 (2011)

Strain control of electron-phonon energy loss rate in many-valley semiconductors

Authors: J. T. Muhonen, M. J. Prest, M. Prunnila, D. Gunnarsson, V. A. Shah, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E. H. C. Parker, D. R. Leadley

Abstract: We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample. We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample. △ Less

Submitted 31 January, 2011; originally announced January 2011.

Journal ref: Appl. Phys. Lett. 98, 182103 (2011)

Magnetotransport in low-density $p$-Si/SiGe heterostructures: From metal through hopping insulator to Wigner glass

Authors: I. L. Drichko, A. M. Dyakonov, I. Yu. Smirnov, A. V. Suslov, Y. M. Galperin, V. Vinokur, M. Myronov, O. A. Mironov, D. R. Leadley

Abstract: We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolutio… ▽ More We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolution from metallic conductance at B=0 through hopping between localized states in intermediate magnetic fields (close to the plateau of the integer quantum Hall effect corresponding to the Landau-level filling factor $ν$=1) to formation of the Wigner glass in the extreme quantum limit ($B\gtrsim 14$, $T \lesssim 0.8$ K). △ Less

Submitted 5 December, 2007; originally announced December 2007.

Comments: 11 pages, 14 figures

High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime

Authors: I. L. Drichko, A. M. Diakonov, I. Yu. Smirnov, G. O. Andrianov, O. A. Mironov, M. Myronov, D. R. Leadley, T. E. Whall

Abstract: The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $Γ$ and velocity change $ΔV /V$ were found to oscillate with filling factor. Both the real $σ_1$ and imaginary $σ_2$ components of the… ▽ More The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $Γ$ and velocity change $ΔV /V$ were found to oscillate with filling factor. Both the real $σ_1$ and imaginary $σ_2$ components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33 mK. By analyzing the ratio of $σ_1$ to $σ_2$, carrier localization can be followed as a function of temperature and magnetic field. At $T$=0.7 K, the variations of $Γ$, $ΔV /V$ and $σ_1$ with SAW intensity have been studied and can be explained by heating of the two dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening. △ Less

Submitted 19 November, 2004; originally announced November 2004.

Comments: Accepted for publication in PRB

Surface Acoustic Waves probe of the p-type Si/SiGe heterostructures

Authors: G. O. Andrianov, I. L. Drichko, A. M. Diakonov, I. Yu. Smirnov, O. A. Mironov, M. Myronov, T. E. Whall, D. R. Leadley

Abstract: The surface acoustic wave (SAWs) attenuation coefficient $Γ$ and the velocity change $ΔV /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up to 7 T and in the frequency range 30-300 MHz in the hole Si/SiGe heterostructures. Oscillations of $Γ$ (H) and $ΔV /V$ (H) in a magnetic field were observed. Both real… ▽ More The surface acoustic wave (SAWs) attenuation coefficient $Γ$ and the velocity change $ΔV /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up to 7 T and in the frequency range 30-300 MHz in the hole Si/SiGe heterostructures. Oscillations of $Γ$ (H) and $ΔV /V$ (H) in a magnetic field were observed. Both real $σ_1$ (H) and imaginary $σ_2$ (H) components of the high-frequency conductivity have been determined. Analysis of the $σ_1$ to $σ_2$ ratio allows the carrier localization to be followed as a function of temperature and magnetic field. At T=0.7 K the variation of $Γ$, $ΔV /V$ and $σ_1$ with SAW intensity have been studied and could be attributed to 2DHG heating by the SAW electric field. The energy relaxation time is found to be dominated by scattering at the deformation potential of the acoustic phonons with weak screening. △ Less

Submitted 30 January, 2004; originally announced January 2004.

Comments: RevTeX4; 4 figs