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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1704.02879 (cond-mat)
[Submitted on 10 Apr 2017 (v1), last revised 12 Apr 2017 (this version, v2)]

Title:Hole weak anti-localization in a strained-Ge surface quantum well

Authors:R. Mizokuchi, P. Torresani, R. Maurand, M. Myronov, S. De Franceschi
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Abstract:We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top gate electrode. This behavior is consistent with a Rashba-type spin-orbit coupling whose strength is proportional to the perpendicular electric field, and hence to the carrier density. By fitting the weak anti-localization peak to a model including a dominant cubic spin-orbit coupling, we extract the characteristic transport time scales and a spin splitting energy of ~1 meV. Finally, we observe a weak anti-localization peak also for magnetic fields parallel to the quantum well and attribute this finding to a combined effect of surface roughness, Zeeman splitting, and virtual occupation of higher-energy hole subbands.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1704.02879 [cond-mat.mes-hall]
  (or arXiv:1704.02879v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1704.02879
Related DOI: https://doi.org/10.1063/1.4997411

Submission history

From: Patrick Torresani [view email]
[v1] Mon, 10 Apr 2017 14:32:27 UTC (1,776 KB)
[v2] Wed, 12 Apr 2017 09:19:33 UTC (1,778 KB)
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