Showing 1–50 of 52 results for author: Mousseau, N

Amorphous silicon structures generated using a moment tensor potential and the activation relaxation technique nouveau

Authors: Karim Zongo, Hao Sun, Claudiane Ouellet-Plamondon, Normand Mousseau, Laurent Karim Béland

Abstract: Preparing realistic atom-scale models of amorphous silicon (a-Si) is a decades-old condensed matter physics challenge. Herein, we combine the Activation Relaxation Technique nouveau (ARTn) to a Moment Tensor Potential (MTP) to generate seven a-Si models containing between 216 and 4096 atoms. A thorough analysis of their short-range and medium-range structural properties is performed, alongside ass… ▽ More Preparing realistic atom-scale models of amorphous silicon (a-Si) is a decades-old condensed matter physics challenge. Herein, we combine the Activation Relaxation Technique nouveau (ARTn) to a Moment Tensor Potential (MTP) to generate seven a-Si models containing between 216 and 4096 atoms. A thorough analysis of their short-range and medium-range structural properties is performed, alongside assessments of excess energy and mechanical properties. The seven ARTn-MTP models are compared with available experimental data and other high quality a-Si models present in the literature. The seven ARTn-MTP a-Si models are in excellent agreement with available experimental data. Notably, several of our models, including the 216-atom, 512-atom, and 1000-atom a-Si models, exhibit low coordination defects without any traces of crystalline grains. Historically overlooked in previous research, our study underlines the need to assess the validity of the continuous random-network hypothesis for the description of perfect amorphous model by characterizing local crystalline environment and to explore the crystallisation process of a-Si through modelling. △ Less

Submitted 21 March, 2025; v1 submitted 17 January, 2025; originally announced January 2025.

Is the Future of Materials Amorphous? Challenges and Opportunities in Simulations of Amorphous Materials

Authors: Ata Madanchi, Emna Azek, Karim Zongo, Laurent K. Béland, Normand Mousseau, Lena Simine

Abstract: Amorphous solids form an enormous and underutilized class of materials. In order to drive the discovery of new useful amorphous materials further we need to achieve a closer convergence between computational and experimental methods. In this review, we highlight some of the important gaps between computational simulations and experiments, discuss popular state-of-the-art computational techniques s… ▽ More Amorphous solids form an enormous and underutilized class of materials. In order to drive the discovery of new useful amorphous materials further we need to achieve a closer convergence between computational and experimental methods. In this review, we highlight some of the important gaps between computational simulations and experiments, discuss popular state-of-the-art computational techniques such as the Activation Relaxation Technique nouveau (ARTn) and Reverse Monte Carlo (RMC), and introduce more recent advances: machine learning interatomic potentials (MLIPs) and generative machine learning for simulations of amorphous matter, e.g., the Morphological Autoregressive Protocol (MAP). Examples are drawn from the amorphous silicon and silica literature as well as from molecular glasses. Our outlook stresses the need for new computational methods to extend the time- and length- scales accessible through numerical simulations. △ Less

Submitted 16 November, 2024; v1 submitted 7 October, 2024; originally announced October 2024.

Understanding the Influence of Hydrogen on BCC Iron Grain Boundaries using the Kinetic Activation Relaxation technique (k-ART)

Authors: Aynour Khosravi, Jun Song, Normand Mousseau

Abstract: Hydrogen embrittlement (HE) poses a significant challenge in the mechanical integrity of iron and its alloys. This study explores the influence of hydrogen atoms on two distinct grain boundaries (GBs), $\Sigma37$ and $\Sigma3$, in body-centered-cubic (BCC) iron. Using the kinetic activation-relaxation technique (k-ART), an off-lattice kinetic Monte Carlo approach, we examine diffusion barriers and… ▽ More Hydrogen embrittlement (HE) poses a significant challenge in the mechanical integrity of iron and its alloys. This study explores the influence of hydrogen atoms on two distinct grain boundaries (GBs), $\Sigma37$ and $\Sigma3$, in body-centered-cubic (BCC) iron. Using the kinetic activation-relaxation technique (k-ART), an off-lattice kinetic Monte Carlo approach, we examine diffusion barriers and mechanisms associated with these GBs. Our findings reveal distinct behaviors of hydrogen in different GB environments, emphasizing the elastic deformation that arises around the GB in the presence of H that leads to either the predominance of new pathways and diffusion routes or a pinning effect of H atoms. We find that, for these systems, while GB is energetically favorable for H, this element diffuses more slowly at the GBs than in the bulk. Moreover, with detailed information about the evolution landscape around GB, we find that the saturation of a GB with hydrogen both stabilizes the GB by shifting barriers associated with Fe diffusion to higher energies and smooths the energy landscape, reducing the number of diffusion events. This comprehensive analysis enhances our understanding of hydrogen's role in GB behavior, contributing valuable insights for the design and optimization of materials in hydrogen-related applications. △ Less

Submitted 3 July, 2024; v1 submitted 18 June, 2024; originally announced June 2024.

Comments: 12 pages, 10 Figures

Kinetics of hydrogen and vacancy diffusion in iron: A Kinetic Activation Relaxation technique (k-ART) study

Authors: Aynour Khosravi, Jun Song, Normand Mousseau

Abstract: We investigate hydrogen (H) and mono and divacancy-hydrogen complexes (VH$_x$ and V$_2$H$_x$) diffusion in body-centered-cubic (BCC) iron using the kinetic Activation-Relaxation Technique (k-ART), an off-lattice kinetic Monte Carlo approach with on-the-fly event catalog building, to explore diffusion barriers and associated mechanisms for these defects. K-ART uncovers complex diffusion pathways fo… ▽ More We investigate hydrogen (H) and mono and divacancy-hydrogen complexes (VH$_x$ and V$_2$H$_x$) diffusion in body-centered-cubic (BCC) iron using the kinetic Activation-Relaxation Technique (k-ART), an off-lattice kinetic Monte Carlo approach with on-the-fly event catalog building, to explore diffusion barriers and associated mechanisms for these defects. K-ART uncovers complex diffusion pathways for the bound complexes, with important barrier variations that depend on the geometrical relations between the position of the inserting Fe atom and that of the bound H. Since H is small and brings little lattice deformation around itself, these bound complexes are compact, and H is fully unbound at the second neighbor site already. As more H are added, however, vacancies deform and affect the lattice over longer distances, contributing to increasing the VH$_x$ complex diffusion barrier and its impact on its local environment. We find, moreover, that the importance of this trapping decreases when going from mono to divacancy complexes, although diffusion barriers for these complexes increase with the number of trapped H. △ Less

Submitted 18 June, 2024; v1 submitted 19 June, 2023; originally announced June 2023.

Comments: 13 pages, 11 Figures

Diffusion of oxygen vacancies formed at the anatase (101) surface: An activation-relaxation technique study

Authors: Jeffrey Rohan De Lile, Normand Mousseau

Abstract: TiO2 is a technologically important material. In particular, its anatase polymorph plays a major role in photocatalysis, which can also accommodate charged and neutral vacancies. There is, however, scant theoretical work on the vacancy charge and associated diffusion from surface to subsurface and bulk in the literature. Here, we aim to understand +2 charge and neutral vacancy diffusion on anatase… ▽ More TiO2 is a technologically important material. In particular, its anatase polymorph plays a major role in photocatalysis, which can also accommodate charged and neutral vacancies. There is, however, scant theoretical work on the vacancy charge and associated diffusion from surface to subsurface and bulk in the literature. Here, we aim to understand +2 charge and neutral vacancy diffusion on anatase (101) surface using 72 and 216 atoms surface slabs employing a semi-local density functional and the Hubbard model. The activation-relaxation technique nouveau (ARTn) coupled with Quantum Espresso is used to investigate the activated mechanisms responsible for the diffusion of oxygen vacancies. The small slab model over-stabilizes the +2 charged topmost surface vacancy, which is attributed to the strong Coulomb repulsion between vacancy and neighboring Ti+4 ions. The larger slab allows atoms to relax parallel to the surface, decreasing the +2 charged topmost surface vacancy stability. The calculated surface-to-subsurface barriers for the +2 charged vacancy and diffusion of the neutral vacancy on a slab of 216 atoms are 0.82 eV and 0.52 eV, respectively. Furthermore, the bulk vacancy prefers to migrate toward the subsurface with relatively low activation barriers 0.19 eV and 0.27 eV and the reverse process has to overcome 0.38 eV and 0.40 eV barriers for the +2 charged and the neutral vacancies. This explains the experimentally observed high concentration of vacancies at the subsurface sites rather than in the bulk, and the dynamic diffusion of vacancies from the bulk to the subsurface and from the subsurface to the bulk is highly likely on the surface of anatase (101). Finally, we provide a plausible explanation for the origin of recently observed subsurface-to-surface diffusion of oxygen vacancy from the calculated results. △ Less

Submitted 25 February, 2023; originally announced February 2023.

Comments: 31 page, 3 Figures, 4 Tables

Evaluating approaches for on-the-fly machine learning interatomic potential for activated mechanisms sampling with the activation-relaxation technique nouveau

Authors: Eugène Sanscartier, Félix Saint-Denis, Karl-Étienne Bolduc, Normand Mousseau

Abstract: In the last few years, much efforts have gone into developing universal machine-learning potentials able to describe interactions for a wide range of structures and phases. Yet, as attention turns to more complex materials including alloys, disordered and heterogeneous systems, the challenge of providing reliable description for all possible environment become ever more costly. In this work, we ev… ▽ More In the last few years, much efforts have gone into developing universal machine-learning potentials able to describe interactions for a wide range of structures and phases. Yet, as attention turns to more complex materials including alloys, disordered and heterogeneous systems, the challenge of providing reliable description for all possible environment become ever more costly. In this work, we evaluate the benefits of using specific versus general potentials for the study of activated mechanisms in solid-state materials. More specifically, we tests three machine-learning fitting approaches using the moment-tensor potential to reproduce a reference potential when exploring the energy landscape around a vacancy in Stillinger-Weber silicon crystal and silicon-germanium zincblende structure using the activation-relaxation technique nouveau (ARTn). We find that a a targeted on-the-fly approach specific and integrated to ARTn generates the highest precision on the energetic and geometry of activated barriers, while remaining cost-effective. This approach expands the type of problems that can be addressed with high-accuracy ML potentials. △ Less

Submitted 22 June, 2023; v1 submitted 20 January, 2023; originally announced January 2023.

Comments: The following article has been submitted to/accepted by The Journal of Chemical Physics. After it is published, it will be found at https://pubs.aip.org/aip/jcp

Internal mechanical dissipation mechanisms in amorphous silicon

Authors: Carl Lévesque, Sjoerd Roorda, François Schiettekatte, Normand Mousseau

Abstract: Using the Activation-Relaxation Technique-nouveau, we search for two-level systems (TLSs) in models of amorphous silicon (a-Si). The TLSs are mechanisms related to internal mechanical dissipation and represent the main source of noise in the most sensitive frequency range of the largest gravitational wave detectors as well as one of the main sources of decoherence in many quantum computers. We sho… ▽ More Using the Activation-Relaxation Technique-nouveau, we search for two-level systems (TLSs) in models of amorphous silicon (a-Si). The TLSs are mechanisms related to internal mechanical dissipation and represent the main source of noise in the most sensitive frequency range of the largest gravitational wave detectors as well as one of the main sources of decoherence in many quantum computers. We show that in a-Si, the majority of the TLSs of interest fall into two main categories: bond-defect hopping where neighbors exchange a topological defect and the Wooten-Winer-Weaire bond exchange. The distribution of these categories depends heavily on the preparation schedule of the a-Si. We use our results to compute the mechanical loss in amorphous silicon, leading to a loss angle of 0.001 at room temperature, decreasing to 0.0001 at 150 K in some configurations. Our modeling results indicate that multiple classes of events can cause experimentally-relevant TLSs in disordered materials and, therefore, multiple attenuation strategies might be needed to reduce their impact. △ Less

Submitted 6 September, 2022; originally announced September 2022.

Comments: 10 pages, 10 figures

Report number: APS/123-QED

Insights on finite size effects in Ab-initio study of CO adsorption and dissociation on Fe 110 surface

Authors: Aurab Chakrabarty, Othmane Bouhali, Normand Mousseau, Charlotte S. Becquart, Fadwa El Mellouhi

Abstract: Adsorption and dissociation of hydrocarbons on metallic surfaces represent crucial steps to carburization of metal. Here, we use density functional theory total energy calculations with the climbing-image nudged elastic band method to estimate the adsorption energies and dissociation barriers for different CO coverages with surface supercells of different sizes. For the absorption of CO, the contr… ▽ More Adsorption and dissociation of hydrocarbons on metallic surfaces represent crucial steps to carburization of metal. Here, we use density functional theory total energy calculations with the climbing-image nudged elastic band method to estimate the adsorption energies and dissociation barriers for different CO coverages with surface supercells of different sizes. For the absorption of CO, the contribution from van der Waals interaction in the computation of adsorption parameters is found important in small systems with high CO-coverages. The dissociation process involves carbon insertion into the Fe surface causing a lattice deformation that requires a larger surface system for unrestricted relaxation. We show that, in larger surface systems associated with dilute CO-coverages, the dissociation barrier is significantly decreased. The elastic deformation of the surface is generic and can potentially applicable for all similar metal-hydrocarbon reactions and therefore a dilute coverage is necessary for the simulation of these reactions as isolated processes. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Comments: 12 pages, 6 figures. Submitted to Journal of Applied Physics

ACM Class: J.2

Journal ref: J. Appl. Phys. 120, 055301 (2016)

Strong long-range relaxations of structural defects in graphene simulated using a new semi-empirical potential

Authors: Sandeep K. Jain, Gerard T. Barkema, Normand Mousseau, Chang-Ming Fang, Marijn A. van Huis

Abstract: We present a new semi-empirical potential for graphene, which includes also an out-of-plane energy term. This novel potential is developed from density functional theory (DFT) calculations for small numbers of atoms, and can be used for configurations with millions of atoms. Our simulations show that buckling caused by typical defects such as the Stone-Wales (SW) defect extends to hundreds of nano… ▽ More We present a new semi-empirical potential for graphene, which includes also an out-of-plane energy term. This novel potential is developed from density functional theory (DFT) calculations for small numbers of atoms, and can be used for configurations with millions of atoms. Our simulations show that buckling caused by typical defects such as the Stone-Wales (SW) defect extends to hundreds of nanometers. Surprisingly, this long-range relaxation lowers the defect formation energy dramatically - by a factor of $2$ or $3$ - implying that previously published DFT-calculated defect formation energies suffer from large systematic errors. We also show the applicability of the novel potential to other long-range defects including line dislocations and grain boundaries, all of which exhibit pronounced out-of-plane relaxations. We show that the energy as a function of dislocation separation diverges logarithmically for flat graphene, but converges to a constant for free standing buckled graphene. A potential in which the atoms are attracted to the 2D plane restores the logarithmic behaviour of the energy. Future simulations employing this potential will elucidate the influence of the typical long-range buckling and rippling on the physical properties of graphene. △ Less

Submitted 28 October, 2015; originally announced October 2015.

Journal ref: J. Phys. Chem. C 2015, 119, 9646-9655

Understanding long-time vacancy aggregation in iron: a kinetic activation-relaxation technique study

Authors: Peter Brommer, Laurent Karim Béland, Jean-François Joly, Normand Mousseau

Abstract: Vacancy diffusion and clustering processes in body-centered-cubic (bcc) Fe are studied using the kinetic activation-relaxation technique (k-ART), an off-lattice kinetic Monte Carlo method with on-the-fly catalog building capabilities. For monovacancies and divacancies, k-ART recovers previously published results while clustering in a 50-vacancy simulation box agrees with experimental estimates. Ap… ▽ More Vacancy diffusion and clustering processes in body-centered-cubic (bcc) Fe are studied using the kinetic activation-relaxation technique (k-ART), an off-lattice kinetic Monte Carlo method with on-the-fly catalog building capabilities. For monovacancies and divacancies, k-ART recovers previously published results while clustering in a 50-vacancy simulation box agrees with experimental estimates. Applying k-ART to the study of clustering pathways for systems containing from one to six vacancies, we find a rich set of diffusion mechanisms. In particular, we show that the path followed to reach a hexavacancy cluster influences greatly the associated mean-square displacement. Aggregation in a 50-vacancy box also shows a notable dispersion in relaxation time associated with effective barriers varying from 0.84 to 1.1 eV depending on the exact pathway selected. We isolate the effects of long-range elastic interactions between defects by comparing to simulations where those effects are deliberately suppressed. This allows us to demonstrate that in bcc Fe, suppressing long-range interactions mainly influences kinetics in the first 0.3 ms, slowing down quick energy release cascades seen more frequently in full simulations, whereas long-term behavior and final state are not significantly affected. △ Less

Submitted 17 November, 2014; v1 submitted 29 July, 2014; originally announced July 2014.

Comments: 11 pages, 12 figures. Updated to post-review manuscript

Journal ref: Phys. Rev. B 90 (2014) 134109

Probing potential energy surface exploration strategies for complex systems

Authors: Gawonou Kokou N'Tsouaglo, Laurent Karim Béland, Jean-François Joly, Peter Brommer, Normand Mousseau, Pascal Pochet

Abstract: The efficiency of minimum-energy configuration searching algorithms is closely linked to the energy landscape structure of complex systems. Here we characterize this structure by following the time evolution of two systems, vacancy aggregation in Fe and energy relaxation in ion-bombarded c-Si, using the kinetic Activation-Relaxation Technique (k-ART), an off-lattice kinetic Monte Carlo (KMC) metho… ▽ More The efficiency of minimum-energy configuration searching algorithms is closely linked to the energy landscape structure of complex systems. Here we characterize this structure by following the time evolution of two systems, vacancy aggregation in Fe and energy relaxation in ion-bombarded c-Si, using the kinetic Activation-Relaxation Technique (k-ART), an off-lattice kinetic Monte Carlo (KMC) method, and the well-known Bell-Evans-Polanyi (BEP) principle. We also compare the efficiency of two methods for handling non-diffusive flickering states -- an exact solution and a Tabu-like approach that blocks already visited states. Comparing these various simulations allow us to confirm that the BEP principle does not hold for complex system since forward and reverse energy barriers are completely uncorrelated. This means that following the lowest available energy barrier, even after removing the flickering states, leads to rapid trapping: relaxing complex systems requires crossing high-energy barriers in order to access new energy basins, in agreement with the recently proposed replenish-and-relax model [Béland et al., PRL 111, 105502 (2013)] This can be done by forcing the system through these barriers with Tabu-like methods. Interestingly, we find that following the fundamental kinetics of a system, though standard KMC approach, is at least as efficient as these brute-force methods while providing the correct kinetics information. △ Less

Submitted 28 July, 2014; originally announced July 2014.

Comments: 10 pages, 15 figures

Strain effect and intermixing at the Si surface: A hybrid quantum and molecular mechanics study

Authors: Laurent Karim Béland, Eduardo Machado-Charry, Pascal Pochet, Normand Mousseau

Abstract: We investigate Ge mixing at the Si(001) surface and characterize the $2\times N$ Si(001) reconstruction by means of hybrid quantum and molecular mechanics calculations (QM/MM). Avoiding fake elastic dampening, this scheme allows to correctly take into account long range deformation induced by reconstruted and defective surfaces. We focus in particular on the dimer vacancy line (DVL) and its intera… ▽ More We investigate Ge mixing at the Si(001) surface and characterize the $2\times N$ Si(001) reconstruction by means of hybrid quantum and molecular mechanics calculations (QM/MM). Avoiding fake elastic dampening, this scheme allows to correctly take into account long range deformation induced by reconstruted and defective surfaces. We focus in particular on the dimer vacancy line (DVL) and its interaction with Ge adatoms. We first show that calculated formation energies for these defects are highly dependent on the choice of chemical potential and that the latter must be chosen carefully. Characterizing the effect of the DVL on the deformation field, we also find that the DVL favors Ge segregation in the fourth layer close to the DVL. Using the activation-relaxation technique (ART nouveau) and QM/MM, we show that a complex diffusion path permits the substitution of the Ge atom in the fourth layer, with barriers compatible with mixing observed at intermediate temperature. △ Less

Submitted 3 July, 2014; originally announced July 2014.

Comments: 11 pages, 7 figures, 3 tables

Journal ref: Phys. Rev. B 90, 155302 (2014)

Replenish and relax: explaining logarithmic annealing in disordered materials

Authors: Laurent Karim Béland, Yonathan Anahory, Dries Smeets, Matthieu Guihard, Peter Brommer, Jean-François Joly, Jean-Christophe Pothier, Laurent J. Lewis, Normand Mousseau, François Schiettekatte

Abstract: Fatigue and aging of materials are, in large part, determined by the evolution of the atomic-scale structure in response to strains and perturbations. This coupling between microscopic structure and long time scales remains one of the main challenges in materials study. Focusing on a model system, ion-damaged crystalline silicon, we combine nanocalorimetric experiments with an off-lattice kinetic… ▽ More Fatigue and aging of materials are, in large part, determined by the evolution of the atomic-scale structure in response to strains and perturbations. This coupling between microscopic structure and long time scales remains one of the main challenges in materials study. Focusing on a model system, ion-damaged crystalline silicon, we combine nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of systems, with heat-release measurements. The microscopic mechanism associated with logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower energy configurations. △ Less

Submitted 10 April, 2013; originally announced April 2013.

Tunable magnetic states in h-BN sheets

Authors: Eduardo Machado-Charry, Paul Boulanger, Luigi Genovese, Normand Mousseau, Pascal Pochet

Abstract: Magnetism in 2D atomic sheets has attracted considerable interest as its existence could allow the development of electronic and spintronic devices. The existence of magnetism is not sufficient for devices, however, as states must be addressable and modifiable through the application of an external drive. We show that defects in hexagonal boron nitride present a strong interplay between the the N-… ▽ More Magnetism in 2D atomic sheets has attracted considerable interest as its existence could allow the development of electronic and spintronic devices. The existence of magnetism is not sufficient for devices, however, as states must be addressable and modifiable through the application of an external drive. We show that defects in hexagonal boron nitride present a strong interplay between the the N-N distance in the edge and the magnetic moments of the defects. By stress-induced geometry modifications, we change the ground state magnetic moment of the defects. This control is made possible by the triangular shape of the defects as well as the strong spin localisation in the magnetic state. △ Less

Submitted 3 December, 2012; v1 submitted 27 July, 2012; originally announced July 2012.

Comments: 10 pages, 3 figures, published in APL

Journal ref: Appl. Phys. Lett. 101, 132405 (2012)

Kinetic Activation Relaxation Technique

Authors: Laurent Karim Béland, Peter Brommer, Fedwa El-Mellouhi, Jean-François Joly, Normand Mousseau

Abstract: We present a detailed description of the kinetic Activation-Relaxation Technique (k-ART), an off-lattice, self-learning kinetic Monte Carlo algorithm with on-the-fly event search. Combining a topological classification for local environments and event generation with ART nouveau, an efficient unbiased sampling method for finding transition states, k-ART can be applied to complex materials with ato… ▽ More We present a detailed description of the kinetic Activation-Relaxation Technique (k-ART), an off-lattice, self-learning kinetic Monte Carlo algorithm with on-the-fly event search. Combining a topological classification for local environments and event generation with ART nouveau, an efficient unbiased sampling method for finding transition states, k-ART can be applied to complex materials with atoms in off-lattice positions or with elastic deformations that cannot be handled with standard KMC approaches. In addition to presenting the various elements of the algorithm, we demonstrate the general character of k-ART by applying the algorithm to three challenging systems: self-defect annihilation in c-Si (crystalline silicon), self-interstitial diffusion in Fe and structural relaxation in a-Si (amorphous silicon). △ Less

Submitted 20 October, 2011; v1 submitted 12 July, 2011; originally announced July 2011.

Comments: 13 pages, 11 figures. Final version as published, Figs. 6 and 7 exchanged, minor typographical and stylistic corrections

Journal ref: Phys. Rev. E 84 (2011) 046704

Crystallization of amorphous silicon induced by mechanical shear deformations

Authors: Ali Kerrache, Normand Mousseau, Laurent J. Lewis

Abstract: We have investigated the response of amorphous silicon (a-Si), in particular crystallization, to external mechanical shear deformations using classical molecular dynamics (MD) simulations and the empirical Environment Dependent Inter-atomic Potential (EDIP) [Phys. Rev. B 56, 8542 (1997)]. In agreement with previous results we find that, at low shear velocity and low temperature, shear deformations… ▽ More We have investigated the response of amorphous silicon (a-Si), in particular crystallization, to external mechanical shear deformations using classical molecular dynamics (MD) simulations and the empirical Environment Dependent Inter-atomic Potential (EDIP) [Phys. Rev. B 56, 8542 (1997)]. In agreement with previous results we find that, at low shear velocity and low temperature, shear deformations increase disorder and defect density. At high temperatures, however, the deformations are found to induce crystallization, demonstrating a dynamical transition associated with both shear rate and temperature. The properties of a-Si under shear deformations and the extent at which the system crystallizes are analyzed in terms of the potential energy difference (PED) between the sheared and non-sheared material, as well as the fraction of defects and the number of particles that possess a crystalline environment. △ Less

Submitted 29 April, 2011; originally announced April 2011.

Comments: 8 pages, 12 figures

Amorphous silicon under mechanical shear deformations: shear velocity and temperature effects

Authors: Ali Kerrache, Normand Mousseau, Laurent J. Lewis

Abstract: Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular dynamics simulations based on the empirical Environment Dependent Inter-atomic Potential (EDIP). With increasing shear velocity at low temperature, we find a s… ▽ More Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular dynamics simulations based on the empirical Environment Dependent Inter-atomic Potential (EDIP). With increasing shear velocity at low temperature, we find a systematic increase in the internal strain leading to the rapid appearance of structural defects (5-fold coordinated atoms). The impacts of externally applied strain can be almost fully compensated by increasing the temperature, allowing the system to respond more rapidly to the deformation. In particular, we find opposite power-law relations between the temperature and the shear velocity and the deformation energy. The spatial distribution of defects is also found to strongly depend on temperature and strain velocity. For low temperature or high shear velocity, defects are concentrated in a few atomic layers near the center of the cell while, with increasing temperature or decreasing shear velocity, they spread slowly throughout the full simulation cell. This complex behavior can be related to the structure of the energy landscape and the existence of a continuous energy-barrier distribution. △ Less

Submitted 15 February, 2011; v1 submitted 26 August, 2010; originally announced August 2010.

Comments: 10 pages, 17 figures

Evolution of the potential-energy surface of amorphous silicon

Authors: Houssem Kallel, Normand Mousseau, François Schiettekatte

Abstract: The link between the energy surface of bulk systems and their dynamical properties is generally difficult to establish. Using the activation-relaxation technique (ART nouveau), we follow the change in the barrier distribution of a model of amorphous silicon as a function of the degree of relaxation. We find that while the barrier-height distribution, calculated from the initial minimum, is a uniqu… ▽ More The link between the energy surface of bulk systems and their dynamical properties is generally difficult to establish. Using the activation-relaxation technique (ART nouveau), we follow the change in the barrier distribution of a model of amorphous silicon as a function of the degree of relaxation. We find that while the barrier-height distribution, calculated from the initial minimum, is a unique function that depends only on the level of distribution, the reverse-barrier height distribution, calculated from the final state, is independent of the relaxation, following a different function. Moreover, the resulting gained or released energy distribution is a simple convolution of these two distributions indicating that the activation and relaxation parts of a the elementary relaxation mechanism are completely independent. This characterized energy landscape can be used to explain nano-calorimetry measurements. △ Less

Submitted 19 April, 2010; v1 submitted 19 April, 2010; originally announced April 2010.

Comments: 5 pages, 4 figures

The Kinetic Activation-Relaxation Technique: A Powerful Off-lattice On-the-fly Kinetic Monte Carlo Algorithm

Authors: fedwa El-Mellouhi, Normand Mousseau, Laurent J. Lewis

Abstract: Many materials science phenomena, such as growth and self-organisation, are dominated by activated diffusion processes and occur on timescales that are well beyond the reach of standard-molecular dynamics simulations. Kinetic Monte Carlo (KMC) schemes make it possible to overcome this limitation and achieve experimental timescales. However, most KMC approaches proceed by discretizing the problem… ▽ More Many materials science phenomena, such as growth and self-organisation, are dominated by activated diffusion processes and occur on timescales that are well beyond the reach of standard-molecular dynamics simulations. Kinetic Monte Carlo (KMC) schemes make it possible to overcome this limitation and achieve experimental timescales. However, most KMC approaches proceed by discretizing the problem in space in order to identify, from the outset, a fixed set of barriers that are used throughout the simulations, limiting the range of problems that can be addressed. Here, we propose a more flexible approach -- the kinetic activation-relaxation technique (k-ART) -- which lifts these constraints. Our method is based on an off-lattice, self-learning, on-the-fly identification and evaluation of activation barriers using ART and a topological description of events. The validity and power of the method are demonstrated through the study of vacancy diffusion in crystalline silicon. △ Less

Submitted 15 May, 2008; originally announced May 2008.

Comments: 5 pages, 4 figures

Gallium self-interstitial relaxation in Gallium Arsenide: an {ab initio} characterization

Authors: Marc-André Malouin, Fedwa El-Mellouhi, Normand Mousseau

Abstract: Ga interstitials in GaAs ($I_{Ga}$) are studied using the local-orbital {ab-initio} code SIESTA in a supercell of {216+1} atoms. Starting from eight different initial configurations, we find five metastable structures: the two tetrahedral sites in addition to the 110-split$\mathrm{_{[Ga-As]}}$, 111-split$\mathrm{_{[Ga-As]}}$, and 100-split$\mathrm{_{[Ga-Ga]}}$. Studying the competition between v… ▽ More Ga interstitials in GaAs ($I_{Ga}$) are studied using the local-orbital {ab-initio} code SIESTA in a supercell of {216+1} atoms. Starting from eight different initial configurations, we find five metastable structures: the two tetrahedral sites in addition to the 110-split$\mathrm{_{[Ga-As]}}$, 111-split$\mathrm{_{[Ga-As]}}$, and 100-split$\mathrm{_{[Ga-Ga]}}$. Studying the competition between various configuration and charges of $I_{Ga}$, we find that predominant gallium interstitials in GaAs are charged +1, neutral or at most -1 depending on doping conditions and prefer to occupy the tetrahedral configuration where it is surrounded by Ga atoms. Our results are in excellent agreement with recent experimental results concerning the dominant charge of $I_{Ga}$, underlining the importance of finite size effects in the calculation of defects. △ Less

Submitted 10 May, 2007; v1 submitted 25 January, 2007; originally announced January 2007.

Comments: v1) 18 pages, 5 figures, submitted to PRB (Latex preprint version) v2) 9 pages, 5 figures, reviewed version resubmitted to PRB (correction to equation 1, some changes and reformulations, minor grammatical and typo corrections, added reference)

Self-organized criticality in the intermediate phase of rigidity percolation

Authors: M. -A. Briere, M. V. Chubynsky, Normand Mousseau

Abstract: Experimental results for covalent glasses have highlighted the existence of a new self-organized phase due to the tendency of glass networks to minimize internal stress. Recently, we have shown that an equilibrated self-organized two-dimensional lattice-based model also possesses an intermediate phase in which a percolating rigid cluster exists with a probability between zero and one, depending… ▽ More Experimental results for covalent glasses have highlighted the existence of a new self-organized phase due to the tendency of glass networks to minimize internal stress. Recently, we have shown that an equilibrated self-organized two-dimensional lattice-based model also possesses an intermediate phase in which a percolating rigid cluster exists with a probability between zero and one, depending on the average coordination of the network. In this paper, we study the properties of this intermediate phase in more detail. We find that microscopic perturbations, such as the addition or removal of a single bond, can affect the rigidity of macroscopic regions of the network, in particular, creating or destroying percolation. This, together with a power-law distribution of rigid cluster sizes, suggests that the system is maintained in a critical state on the rigid/floppy boundary throughout the intermediate phase, a behavior similar to self-organized criticality, but, remarkably, in a thermodynamically equilibrated state. The distinction between percolating and non-percolating networks appears physically meaningless, even though the percolating cluster, when it exists, takes up a finite fraction of the network. We point out both similarities and differences between the intermediate phase and the critical point of ordinary percolation models without self-organization. Our results are consistent with an interpretation of recent experiments on the pressure dependence of Raman frequencies in chalcogenide glasses in terms of network homogeneity. △ Less

Submitted 19 October, 2006; originally announced October 2006.

Comments: 20 pages, 18 figures

Charge-dependent migration pathways for the Ga vacancy in GaAs

Authors: Fedwa El-Mellouhi, Normand Mousseau

Abstract: Using SIEST-ART, a combination of the local-basis \textit{ab-initio} program SIESTA and the activation-relaxation technique (ART nouveau) we study the diffusion mechanisms of the gallium vacancy in GaAs. Vacancies are found to diffuse to the second neighbor using two different mechanisms, as well as to the first and fourth neighbors following various mechanisms. We find that the height of the en… ▽ More Using SIEST-ART, a combination of the local-basis \textit{ab-initio} program SIESTA and the activation-relaxation technique (ART nouveau) we study the diffusion mechanisms of the gallium vacancy in GaAs. Vacancies are found to diffuse to the second neighbor using two different mechanisms, as well as to the first and fourth neighbors following various mechanisms. We find that the height of the energy barrier is sensitive to the Fermi-level and generally increases with the charge state. Migration pathways themselves can be strongly charge-dependent and may appear or disappear as a function of the charge state. These differences in transition state and migration barrier are explained by the charge transfer that takes place during the vacancy migration. △ Less

Submitted 15 June, 2006; originally announced June 2006.

Comments: 10 pages, 7 figures

Self-organization with equilibration: a model for the intermediate phase in rigidity percolation

Authors: M. V. Chubynsky, M. -A. Briere, N. Mousseau

Abstract: Recent experimental results for covalent glasses suggest the existence of an intermediate phase attributed to the self-organization of the glass network resulting from the tendency to minimize its internal stress. However, the exact nature of this experimentally measured phase remains unclear. We modify a previously proposed model of self-organization by generating a uniform sampling of stress-f… ▽ More Recent experimental results for covalent glasses suggest the existence of an intermediate phase attributed to the self-organization of the glass network resulting from the tendency to minimize its internal stress. However, the exact nature of this experimentally measured phase remains unclear. We modify a previously proposed model of self-organization by generating a uniform sampling of stress-free networks. In our model, studied on a diluted triangular lattice, an unusual intermediate phase appears, in which both rigid and floppy networks have a chance to occur, a result also observed in a related model on a Bethe lattice by Barre et al. [Phys. Rev. Lett. 94, 208701 (2005)]. Our results for the bond-configurational entropy of self-organized networks, which turns out to be only about 2% lower than that of random networks, suggest that a self-organized intermediate phase could be common in systems near the rigidity percolation threshold. △ Less

Submitted 17 February, 2006; originally announced February 2006.

Comments: 9 pages, 6 figures

Thermally-activated charge reversibility of gallium vacancies in GaAs

Authors: Fedwa El-Mellouhi, Normand Mousseau

Abstract: The dominant charge state for the Ga vacancy in GaAs has been the subject of a long debate, with experiments proposing $-$1, $-$2 or $-$3 as the best answer. We revisit this problem using {\it ab initio} calculations to compute the effects of temperature on the Gibbs free energy of formation, and we find that the thermal dependence of the Fermi level and of the ionization levels lead to a revers… ▽ More The dominant charge state for the Ga vacancy in GaAs has been the subject of a long debate, with experiments proposing $-$1, $-$2 or $-$3 as the best answer. We revisit this problem using {\it ab initio} calculations to compute the effects of temperature on the Gibbs free energy of formation, and we find that the thermal dependence of the Fermi level and of the ionization levels lead to a reversal of the preferred charge state as the temperature increases. Calculating the concentrations of gallium vacancies based on these results, we reproduce two conflicting experimental measurements, showing that these can be understood from a single set of coherent LDA results when thermal effects are included. △ Less

Submitted 14 June, 2006; v1 submitted 3 January, 2006; originally announced January 2006.

Comments: 4 pages, 4 figures

Activated sampling in complex materials at finite temperature: the properly-obeying-probability activation-relaxation technique

Authors: Henk Vocks, M. V. Chubynsky, G. T. Barkema, Normand Mousseau

Abstract: While the dynamics of many complex systems is dominated by activated events, there are very few simulation methods that take advantage of this fact. Most of these procedures are restricted to relatively simple systems or, as with the activation-relaxation technique (ART), sample the conformation space efficiently at the cost of a correct thermodynamical description. We present here an extension… ▽ More While the dynamics of many complex systems is dominated by activated events, there are very few simulation methods that take advantage of this fact. Most of these procedures are restricted to relatively simple systems or, as with the activation-relaxation technique (ART), sample the conformation space efficiently at the cost of a correct thermodynamical description. We present here an extension of ART, the properly-obeying-probability ART (POP-ART), that obeys detailed balance and samples correctly the thermodynamic ensemble. Testing POP-ART on two model systems, a vacancy and an interstitial in crystalline silicon, we show that this method recovers the proper thermodynamical weights associated with the various accessible states and is significantly faster than MD in the diffusion of a vacancy below 700 K. △ Less

Submitted 5 August, 2005; originally announced August 2005.

Comments: 10 pages, 3 figures

Nucleation and crystallization process of silicon using Stillinger-Weber potential

Authors: Philippe Beaucage, Normand Mousseau

Abstract: We study the homogeneous nucleation process in Stillinger-Weber silicon in the NVT ensemble. A clear first-order transition from the liquid to crystal phase is observed thermodynamically with kinetic and structural evidence of the transformation. At 0.75 T_m, the critical cluster size is about 175 atoms. The lifetime distribution of clusters as a function of the maximum size their reach follows… ▽ More We study the homogeneous nucleation process in Stillinger-Weber silicon in the NVT ensemble. A clear first-order transition from the liquid to crystal phase is observed thermodynamically with kinetic and structural evidence of the transformation. At 0.75 T_m, the critical cluster size is about 175 atoms. The lifetime distribution of clusters as a function of the maximum size their reach follows an inverse gaussian distribution as was predicted recently from the classical theory of nucleation (CNT). However, while there is a qualitative agreement with the CNT, the free energy curve obtained from the simulations differs significantly from the theoretical predictions, suggesting that the low-density liquid phase found recently could play a role in the nucleation process. △ Less

Submitted 13 October, 2004; originally announced October 2004.

Comments: 21 pages

Self-vacancies in Gallium Arsenide: an ab initio calculation

Authors: Fedwa El-Mellouhi, Normand Mousseau

Abstract: We report here a reexamination of the static properties of vacancies in GaAs by means of first-principles density-functional calculations using localized basis sets. Our calculated formation energies yields results that are in good agreement with recent experimental and {\it ab-initio} calculation and provide a complete description of the relaxation geometry and energetic for various charge stat… ▽ More We report here a reexamination of the static properties of vacancies in GaAs by means of first-principles density-functional calculations using localized basis sets. Our calculated formation energies yields results that are in good agreement with recent experimental and {\it ab-initio} calculation and provide a complete description of the relaxation geometry and energetic for various charge state of vacancies from both sublattices. Gallium vacancies are stable in the 0, -, -2, -3 charge state, but V_Ga^-3 remains the dominant charge state for intrinsic and n-type GaAs, confirming results from positron annihilation. Interestingly, Arsenic vacancies show two successive negative-U transitions making only +1, -1 and -3 charge states stable, while the intermediate defects are metastable. The second transition (-/-3) brings a resonant bond relaxation for V_As^-3 similar to the one identified for silicon and GaAs divacancies. △ Less

Submitted 9 September, 2004; originally announced September 2004.

Comments: 14 pages

Binary continuous random networks

Authors: Normand Mousseau, G. T. Barkema

Abstract: Many properties of disordered materials can be understood by looking at idealized structural models, in which the strain is as small as is possible in the absence of long-range order. For covalent amorphous semiconductors and glasses, such an idealized structural model, the continuous-random network, was introduced 70 years ago by Zachariasen. In this model, each atom is placed in a crystal-like… ▽ More Many properties of disordered materials can be understood by looking at idealized structural models, in which the strain is as small as is possible in the absence of long-range order. For covalent amorphous semiconductors and glasses, such an idealized structural model, the continuous-random network, was introduced 70 years ago by Zachariasen. In this model, each atom is placed in a crystal-like local environment, with perfect coordination and chemical ordering, yet longer-range order is nonexistent. Defects, such as missing or added bonds, or chemical mismatches, however, are not accounted for. In this paper we explore under which conditions the idealized CRN model without defects captures the properties of the material, and under which conditions defects are an inherent part of the idealized model. We find that the density of defects in tetrahedral networks does not vary smoothly with variations in the interaction strengths, but jumps from close-to-zero to a finite density. Consequently, in certain materials, defects do not play a role except for being thermodynamical excitations, whereas in others they are a fundamental ingredient of the ideal structure. △ Less

Submitted 31 August, 2004; originally announced August 2004.

Comments: Article in honor of Mike Thorpe's 60th birthday (to appear in J. Phys: Cond Matt.)

Liquid-liquid phase transition in Stillinger-Weber silicon

Authors: Philippe Beaucage, Normand Mousseau

Abstract: It was recently demonstrated that the Stillinger-Weber silicon undergoes a liquid-liquid first-order phase transition deep into the supercooled region (Sastry and Angell, Nature Materials 2, 739 (2003)). Here we study the effects of perturbations on this phase transition. We show that the order of the liquid-liquid transition changes with negative pressure. We also find that the liquid-liquid tr… ▽ More It was recently demonstrated that the Stillinger-Weber silicon undergoes a liquid-liquid first-order phase transition deep into the supercooled region (Sastry and Angell, Nature Materials 2, 739 (2003)). Here we study the effects of perturbations on this phase transition. We show that the order of the liquid-liquid transition changes with negative pressure. We also find that the liquid-liquid transition disappears when the three-body term of the potential is strengthened by as little as 5 %. This implies that the details of the potential could affect strongly the nature and even the existence of the liquid-liquid phase. △ Less

Submitted 28 July, 2004; originally announced July 2004.

Comments: 13 pages

Accelerated dynamics with the dynamical activation-relaxation technique

Authors: G. T. Barkema, Normand Mousseau

Abstract: The dynamics of many atomic systems is controlled by activated events taking place on a time scale which is long compared to that associated with thermal vibrations. This often places problems of interest outside the range of standard simulation methods such as molecular dynamics. We present here an algorithm, the dynamical activation-relaxation technique (DART), which slows down thermal vibrati… ▽ More The dynamics of many atomic systems is controlled by activated events taking place on a time scale which is long compared to that associated with thermal vibrations. This often places problems of interest outside the range of standard simulation methods such as molecular dynamics. We present here an algorithm, the dynamical activation-relaxation technique (DART), which slows down thermal vibrations, while leaving untouched the activated processes which constitute the long-time dynamics. As an example, we show that it is possible to accelerate considerably the dynamics of self-defects in a 1000-atom cell of c-Si over a wide range of temperatures. △ Less

Submitted 6 April, 2004; originally announced April 2004.

Comments: 4 pages, 2 figures

Report number: ITP-UU-04/09

Efficient sampling in complex materials at finite temperature: the thermodynamically-weighted activation-relaxation technique

Authors: Normand Mousseau, G. T. Barkema

Abstract: We present an accelerated algorithm that samples correctly the thermodynamic ensemble in complex systems where the dynamics is controlled by activation barriers. The efficiency of the thermodynamically-weighted activation-relaxation technique (THWART) is many orders of magnitude greater than standard molecular dynamics, even at room temperature and above, in systems as complex as proteins and am… ▽ More We present an accelerated algorithm that samples correctly the thermodynamic ensemble in complex systems where the dynamics is controlled by activation barriers. The efficiency of the thermodynamically-weighted activation-relaxation technique (THWART) is many orders of magnitude greater than standard molecular dynamics, even at room temperature and above, in systems as complex as proteins and amorphous silicon. △ Less

Submitted 17 October, 2003; originally announced October 2003.

Comments: 4 pages, 4 postscript figures

Sampling the diffusion paths of a neutral vacancy in Silicon with quantum mechanical calculations

Authors: Fedwa El-Mellouhi, Normand Mousseau, Pablo Ordejón

Abstract: We report a first-principles study of vacancy-induced self-diffusion in crystalline silicon. Starting form a fully relaxed configuration with a neutral vacancy, we proceed to search for local diffusion paths. The diffusion of the vacancy proceeds by hops to first nearest neighbor with an energy barrier of 0.40 eV in agreement with experimental results. Competing mechanisms are identified, like t… ▽ More We report a first-principles study of vacancy-induced self-diffusion in crystalline silicon. Starting form a fully relaxed configuration with a neutral vacancy, we proceed to search for local diffusion paths. The diffusion of the vacancy proceeds by hops to first nearest neighbor with an energy barrier of 0.40 eV in agreement with experimental results. Competing mechanisms are identified, like the reorientation, and the recombination of dangling bonds by Wooten-Winer-Weaire process. △ Less

Submitted 30 July, 2004; v1 submitted 14 August, 2003; originally announced August 2003.

Comments: 10 pages, 5 figures, accepted for publication in Pysical review B

Energy landscape of relaxed amorphous silicon

Authors: Francis Valiquette, Normand Mousseau

Abstract: We analyze the structure of the energy landscape of a well-relaxed 1000-atom model of amorphous silicon using the activation-relaxation technique (ART nouveau). Generating more than 40,000 events starting from a single minimum, we find that activated mechanisms are local in nature, that they are distributed uniformly throughout the model and that the activation energy is limited by the cost of b… ▽ More We analyze the structure of the energy landscape of a well-relaxed 1000-atom model of amorphous silicon using the activation-relaxation technique (ART nouveau). Generating more than 40,000 events starting from a single minimum, we find that activated mechanisms are local in nature, that they are distributed uniformly throughout the model and that the activation energy is limited by the cost of breaking one bond, independently of the complexity of the mechanism. The overall shape of the activation-energy-barrier distribution is also insensitive to the exact details of the configuration, indicating that well-relaxed configurations see essentially the same environment. These results underscore the localized nature of relaxation in this material. △ Less

Submitted 24 January, 2003; originally announced January 2003.

Comments: 8 pages, 12 figures

Relationship between dynamical heterogeneities and stretched exponential relaxation

Authors: S. I. Simdyankin, Normand Mousseau

Abstract: We identify the dynamical heterogeneities as an essential prerequisite for stretched exponential relaxation in dynamically frustrated systems. This heterogeneity takes the form of ordered domains of finite but diverging lifetime for particles in atomic or molecular systems, or spin states in magnetic materials. At the onset of the dynamical heterogeneity, the distribution of time intervals spent… ▽ More We identify the dynamical heterogeneities as an essential prerequisite for stretched exponential relaxation in dynamically frustrated systems. This heterogeneity takes the form of ordered domains of finite but diverging lifetime for particles in atomic or molecular systems, or spin states in magnetic materials. At the onset of the dynamical heterogeneity, the distribution of time intervals spent in such domains or traps becomes stretched exponential at long time. We rigorously show that once this is the case, the autocorrelation function of the renewal process formed by these time intervals is also stretched exponential at long time. △ Less

Submitted 11 August, 2003; v1 submitted 15 November, 2002; originally announced November 2002.

Comments: 8 pages, 4 figures, submitted to PRE

Journal ref: Phys. Rev. E, 68, 041110 (2003)

Characterization of the stretched exponential trap-time distributions in one-dimensional coupled map lattices

Authors: S. I. Simdyankin, Normand Mousseau, E. R. Hunt

Abstract: Stretched exponential distributions and relaxation responses are encountered in a wide range of physical systems such as glasses, polymers and spin glasses. As found recently, this type of behavior occurs also for the distribution function of certain trap time in a number of coupled dynamical systems. We analyze a one-dimensional mathematical model of coupled chaotic oscillators which reproduces… ▽ More Stretched exponential distributions and relaxation responses are encountered in a wide range of physical systems such as glasses, polymers and spin glasses. As found recently, this type of behavior occurs also for the distribution function of certain trap time in a number of coupled dynamical systems. We analyze a one-dimensional mathematical model of coupled chaotic oscillators which reproduces an experimental set-up of coupled diode-resonators and identify the necessary ingredients for stretched exponential distributions. △ Less

Submitted 26 August, 2002; originally announced August 2002.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. E 66, 066205 (2002)

Stretched exponential dynamics in a chain of coupled chaotic oscillators

Authors: E. R. Hunt, P. M. Gade, Normand Mousseau

Abstract: We measure stretched exponential behavior, exp(- (t/t_0)**beta), over many decades in a one-dimensional array of coupled chaotic electronic elements just above a crisis-induced intermittency transition. There is strong spatial heterogeneity and individual sites display a dynamics ranging from near power law ($β=0$) to near exponential ($β=1$) while the global dynamics, given by a spatial average… ▽ More We measure stretched exponential behavior, exp(- (t/t_0)**beta), over many decades in a one-dimensional array of coupled chaotic electronic elements just above a crisis-induced intermittency transition. There is strong spatial heterogeneity and individual sites display a dynamics ranging from near power law ($β=0$) to near exponential ($β=1$) while the global dynamics, given by a spatial average, remains stretched exponential. These results can be reproduced quantitatively with a one-dimensional coupled-map lattice and thus appear to be system independent. In this model, local stretched exponential dynamics is achieved without frozen disorder and is a fundamental property of the coupled system. The heterogeneity of the experimental system can be reproduced by introducing quenched disorder in the model. This suggests that the stretched exponential dynamics can arise as a purely chaotic phenomenon. △ Less

Submitted 8 April, 2002; originally announced April 2002.

Comments: 9 pages, 6 figures

Efficient tight-binding Monte Carlo structural sampling of complex materials

Authors: Parthapratim Biswas, G. T. Barkema, Normand Mousseau, W. F. van der Weg

Abstract: While recent work towards the development of tight-binding and ab-initio algorithms has focused on molecular dynamics, Monte Carlo methods can often lead to better results with relatively little effort. We present here a multi-step Monte Carlo algorithm that makes use of the possibility of quickly evaluating local energies. For the thermalization of a 1000-atom configuration of {\it a}-Si, this… ▽ More While recent work towards the development of tight-binding and ab-initio algorithms has focused on molecular dynamics, Monte Carlo methods can often lead to better results with relatively little effort. We present here a multi-step Monte Carlo algorithm that makes use of the possibility of quickly evaluating local energies. For the thermalization of a 1000-atom configuration of {\it a}-Si, this algorithm gains about an order of magnitude in speed over standard molecular dynamics. The algorithm can easily be ported to a wide range of materials and can be dynamically optimized for a maximum efficiency. △ Less

Submitted 16 December, 2000; originally announced December 2000.

Comments: 5 pages including 3 postscript figures

Dynamics of Lennard-Jones clusters: A characterization of the activation-relaxation technique

Authors: R. Malek, N. Mousseau

Abstract: The potential energy surface (PES) of Lennard-Jones clusters is investigated using the activation-relaxation technique (ART). This method defines events in the configurational energy landscape as a two-step process: (a) a configuration is first activated from a local minimum to a nearby saddle-point and (b) is then relaxed to a new minimum. Although ART has been applied with success to a wide ra… ▽ More The potential energy surface (PES) of Lennard-Jones clusters is investigated using the activation-relaxation technique (ART). This method defines events in the configurational energy landscape as a two-step process: (a) a configuration is first activated from a local minimum to a nearby saddle-point and (b) is then relaxed to a new minimum. Although ART has been applied with success to a wide range of materials such as a-Si, a-SiO2 and binary Lennard-Jones glasses, questions remain regarding the biases of the technique. We address some of these questions in a detailed study of ART-generated events in Lennard-Jones (LJ) clusters, a system for which much is already known. In particular, we study the distribution of saddle-points, the pathways between configurations, and the reversibility of paths. We find that ART can identify all trajectories with a first-order saddle point leaving a given minimum, is fully reversible, and samples events following the Boltzmann weight at the saddle point. △ Less

Submitted 2 June, 2000; originally announced June 2000.

Comments: 8 pages, 7 figures in postscript

Cooperative motion in Lennard-Jones binary mixtures below the glass transition

Authors: Normand Mousseau

Abstract: Using the activation-relaxation technique (ART), we study the nature of relaxation events in a binary Lennard-Jones system above and below the glass transition temperature (T_g). ART generates trajectories with almost identical efficiency at all temperature, thus avoiding the exponential slowing down below T_g and providing extensive sampling everywhere. Comparing these runs, we find that the nu… ▽ More Using the activation-relaxation technique (ART), we study the nature of relaxation events in a binary Lennard-Jones system above and below the glass transition temperature (T_g). ART generates trajectories with almost identical efficiency at all temperature, thus avoiding the exponential slowing down below T_g and providing extensive sampling everywhere. Comparing these runs, we find that the number of atoms involved in an event decreases strongly with temperature. In particular, while in the supercooled liquid activated events are collective, involving on average thirty atoms or more, events below T_g involve mostly single atoms and produce minimal disturbance of the local environment. These results confirm the interpretation and the generality of recent NMR results by Tang et al (Nature 402, 160 (1999)). △ Less

Submitted 20 April, 2000; originally announced April 2000.

Comments: 4 pages, 5 figures

High-quality continuous random networks

Authors: G. T. Barkema, N. Mousseau

Abstract: The continuous random network (CRN) model is an idealized model for perfectly coordinated amorphous semiconductors. The quality of a CRN can be assessed in terms of topological and configurational properties, including coordination, bond-angle distributions and deformation energy. Using a variation on the sillium approach proposed 14 years ago by Wooten, Winer and Weaire, we present 1000-atom an… ▽ More The continuous random network (CRN) model is an idealized model for perfectly coordinated amorphous semiconductors. The quality of a CRN can be assessed in terms of topological and configurational properties, including coordination, bond-angle distributions and deformation energy. Using a variation on the sillium approach proposed 14 years ago by Wooten, Winer and Weaire, we present 1000-atom and 4096-atom configurations with a degree of strain significantly less than the best CRN available at the moment and, for the first time, comparable to experimental results. △ Less

Submitted 4 November, 1999; originally announced November 1999.

Comments: 7 pages, including 6 postscript figures

Numerical studies of the vibrational isocoordinate rule in chalcogenide glasses

Authors: N. Mousseau, D. A. Drabold

Abstract: Many properties of alloyed chalcogenide glasses can be closely correlated with the average coordination of these compounds. This is the case, for example, of the ultrasonic constants, dilatometric softening temperature and the vibrational densities of states. What is striking, however, is that these properties are nevertheless almost independent of the composition at given average coordination.… ▽ More Many properties of alloyed chalcogenide glasses can be closely correlated with the average coordination of these compounds. This is the case, for example, of the ultrasonic constants, dilatometric softening temperature and the vibrational densities of states. What is striking, however, is that these properties are nevertheless almost independent of the composition at given average coordination. Here, we report on some numerical verification of this experimental rule as applied to vibrational density of states. △ Less

Submitted 4 October, 1999; originally announced October 1999.

Comments: 7 pages, including 3 figures

Activated mechanisms in amorphous silicon: an activation-relaxation-technique study

Authors: Normand Mousseau, G. T. Barkema

Abstract: At low temperatures, dynamics in amorphous silicon occurs through a sequence of discrete activated events that locally reorganize the topological network. Using the activation-relaxation technique, a data base containing over 8000 such events is generated, and the events are analyzed with respect to their energy barrier and asymmetry, displacement and volume expansion/contraction. Special attent… ▽ More At low temperatures, dynamics in amorphous silicon occurs through a sequence of discrete activated events that locally reorganize the topological network. Using the activation-relaxation technique, a data base containing over 8000 such events is generated, and the events are analyzed with respect to their energy barrier and asymmetry, displacement and volume expansion/contraction. Special attention is paid to those events corresponding to diffusing coordination defects. The energetics is not clearly correlated with the displacement, nor with the defect density in well relaxed configurations. We find however some correlation with the local volume expansion: it tends to increase by about 4 eV/Å$^3$. The topological properties of these events are also studied; they show an unexpectedly rich diversity. △ Less

Submitted 27 May, 1999; originally announced May 1999.

Comments: 10 pages, 9 figures

Report number: THU-99/14

Elementary mechanisms governing the dynamics of silica

Authors: Normand Mousseau, G. T. Barkema, Simon W. de Leeuw

Abstract: A full understanding of glasses requires an accurate atomistic picture of the complex activated processes that constitute the low-temperature dynamics of these materials. To this end, we generate over five thousand activated events in silica glass, using the activation-relaxation technique; these atomistic mechanisms are analysed and classified according to their activation energies, their topol… ▽ More A full understanding of glasses requires an accurate atomistic picture of the complex activated processes that constitute the low-temperature dynamics of these materials. To this end, we generate over five thousand activated events in silica glass, using the activation-relaxation technique; these atomistic mechanisms are analysed and classified according to their activation energies, their topological properties and their spatial extend. We find that these are collective processes, involving ten to hundreds of atoms with a continuous range of activation energies; that diffusion and relaxation occurs through the creation, annihilation and motion of single dangling bonds; and that silicon and oxygen have essentially the same diffusivity. △ Less

Submitted 12 January, 1999; originally announced January 1999.

Comments: 4 pages, 3 figures

Report number: THU-99/01

Exploring structural mechanisms in disordered materials using the activation-relaxation technique

Authors: G. T. Barkema, Normand Mousseau

Abstract: Structural mechanisms in disordered materials like amorphous semi-conductors and glasses can be explored with the activation-relaxation technique (ART). The application of a sequence of such mechanisms allows for the generation of well-relaxed structures. The method and its application in the study of the microscopic changes in amorphous silicon and silica glass are reviewed, and two recent impr… ▽ More Structural mechanisms in disordered materials like amorphous semi-conductors and glasses can be explored with the activation-relaxation technique (ART). The application of a sequence of such mechanisms allows for the generation of well-relaxed structures. The method and its application in the study of the microscopic changes in amorphous silicon and silica glass are reviewed, and two recent improvements are presented. △ Less

Submitted 6 October, 1998; originally announced October 1998.

Comments: proceedings of the 1998 conference on computational physics; 6 pages, 2 figures

Report number: THU-98/41

Identification of relaxation and diffusion mechanisms in amorphous silicon

Authors: G. T. Barkema, Normand Mousseau

Abstract: The dynamics of amorphous silicon at low temperatures can be characterized by a sequence of discrete activated events, through which the topological network is locally reorganized. Using the activation-relaxation technique, we create more than 8000 events, providing an extensive database of relaxation and diffusion mechanisms. The generic properties of these events - size, number of atoms involv… ▽ More The dynamics of amorphous silicon at low temperatures can be characterized by a sequence of discrete activated events, through which the topological network is locally reorganized. Using the activation-relaxation technique, we create more than 8000 events, providing an extensive database of relaxation and diffusion mechanisms. The generic properties of these events - size, number of atoms involved, activation energy, etc. - are discussed and found to be compatible with experimental data. We introduce a complete and unique classification of defects based on their topological properties and apply it to study of events involving only four-fold coordinated atoms. For these events, we identify and present in detail three dominant mechanisms. △ Less

Submitted 29 April, 1998; originally announced April 1998.

Comments: 4 pages, three figures, submitted to PRL

Report number: THU-98/19

Tight-binding molecular-dynamics studies of defects and disorder in covalently-bonded materials

Authors: Laurent J Lewis, Normand Mousseau

Abstract: Tight-binding (TB) molecular dynamics (MD) has emerged as a powerful method for investigating the atomic-scale structure of materials --- in particular the interplay between structural and electronic properties --- bridging the gap between empirical methods which, while fast and efficient, lack transferability, and ab initio approaches which, because of excessive computational workload, suffer f… ▽ More Tight-binding (TB) molecular dynamics (MD) has emerged as a powerful method for investigating the atomic-scale structure of materials --- in particular the interplay between structural and electronic properties --- bridging the gap between empirical methods which, while fast and efficient, lack transferability, and ab initio approaches which, because of excessive computational workload, suffer from limitations in size and run times. In this short review article, we examine several recent applications of TBMD in the area of defects in covalently-bonded semiconductors and the amorphous phases of these materials. △ Less

Submitted 26 March, 1998; originally announced March 1998.

Comments: Invited review article for Comput. Mater. Sci. (38 pages incl. 18 fig.)

Surface diffusion coefficients by thermodynamic integration: Cu on Cu(100)

Authors: Ghyslain Boisvert, Normand Mousseau, Laurent J. Lewis

Abstract: The rate of diffusion of a Cu adatom on the Cu(100) surface is calculated using thermodynamic integration within the transition state theory. The results are found to be in excellent agreement with the essentially exact values from molecular-dynamics simulations. The activation energy and related entropy are shown to be effectively independent of temperature, thus establishing the validity of th… ▽ More The rate of diffusion of a Cu adatom on the Cu(100) surface is calculated using thermodynamic integration within the transition state theory. The results are found to be in excellent agreement with the essentially exact values from molecular-dynamics simulations. The activation energy and related entropy are shown to be effectively independent of temperature, thus establishing the validity of the Arrhenius law over a wide range of temperatures. Our study demonstrates the equivalence of diffusion rates calculated using thermodynamic integration within the transition state theory and direct molecular-dynamics simulations. △ Less

Submitted 25 March, 1998; originally announced March 1998.

Comments: 4 pages (revtex), two figures (postscript)

Traveling through potential energy landscapes of disordered materials: the activation-relaxation technique

Authors: Normand Mousseau, G. T. Barkema

Abstract: A detailed description of the activation-relaxation technique (ART) is presented. This method defines events in the configurational energy landscape of disordered materials, such as a-Si, glasses and polymers, in a two-step process: first, a configuration is activated from a local minimum to a nearby saddle-point; next, the configuration is relaxed to a new minimum; this allows for jumps over en… ▽ More A detailed description of the activation-relaxation technique (ART) is presented. This method defines events in the configurational energy landscape of disordered materials, such as a-Si, glasses and polymers, in a two-step process: first, a configuration is activated from a local minimum to a nearby saddle-point; next, the configuration is relaxed to a new minimum; this allows for jumps over energy barriers much higher than what can be reached with standard techniques. Such events can serve as basic steps in equilibrium and kinetic Monte Carlo schemes. △ Less

Submitted 2 October, 1997; originally announced October 1997.

Comments: 7 pages, 2 postscript figures

Report number: HLRZ1997-58

Structural, electronic, and dynamical properties of amorphous gallium arsenide: a comparison between two topological models

Authors: Normand Mousseau, Laurent J. Lewis

Abstract: We present a detailed study of the effect of local chemical ordering on the structural, electronic, and dynamical properties of amorphous gallium arsenide. Using the recently-proposed ``activation-relaxation technique'' and empirical potentials, we have constructed two 216-atom tetrahedral continuous random networks with different topological properties, which were further relaxed using tight-bi… ▽ More We present a detailed study of the effect of local chemical ordering on the structural, electronic, and dynamical properties of amorphous gallium arsenide. Using the recently-proposed ``activation-relaxation technique'' and empirical potentials, we have constructed two 216-atom tetrahedral continuous random networks with different topological properties, which were further relaxed using tight-binding molecular dynamics. The first network corresponds to the traditional, amorphous, Polk-type, network, randomly decorated with Ga and As atoms. The second is an amorphous structure with a minimum of wrong (homopolar) bonds, and therefore a minimum of odd-membered atomic rings, and thus corresponds to the Connell-Temkin model. By comparing the structural, electronic, and dynamical properties of these two models, we show that the Connell-Temkin network is energetically favored over Polk, but that most properties are little affected by the differences in topology. We conclude that most indirect experimental evidence for the presence (or absence) of wrong bonds is much weaker than previously believed and that only direct structural measurements, i.e., of such quantities as partial radial distribution functions, can provide quantitative information on these defects in a-GaAs. △ Less

Submitted 6 February, 1997; originally announced February 1997.

Comments: 10 pages, 7 ps figures with epsf

Topology of amorphous tetrahedral semiconductors on intermediate lengthscales

Authors: Normand Mousseau, Laurent J. Lewis

Abstract: Using the recently-proposed ``activation-relaxation technique'' for optimizing complex structures, we develop a structural model appropriate to a-GaAs which is almost free of odd-membered rings, i.e., wrong bonds, and possesses an almost perfect coordination of four. The model is found to be superior to structures obtained from much more computer-intensive tight-binding or quantum molecular-dyna… ▽ More Using the recently-proposed ``activation-relaxation technique'' for optimizing complex structures, we develop a structural model appropriate to a-GaAs which is almost free of odd-membered rings, i.e., wrong bonds, and possesses an almost perfect coordination of four. The model is found to be superior to structures obtained from much more computer-intensive tight-binding or quantum molecular-dynamics simulations. For the elemental system a-Si, where wrong bonds do not exist, the cost in elastic energy for removing odd-membered rings is such that the traditional continuous-random network is appropriate. Our study thus provides, for the first time, direct information on the nature of intermediate-range topology in amorphous tetrahedral semiconductors. △ Less

Submitted 28 October, 1996; originally announced October 1996.

Comments: 4 pages, Latex and 2 postscript figures