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Showing 1–5 of 5 results for author: Morokov, Y N

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  1. arXiv:1701.06654  [pdf

    cond-mat.mes-hall

    Elastic Strain Fields In Lateral Double Ge/Si Quantum Dots

    Authors: Yu. N. Morokov, M. P. Fedoruk

    Abstract: Simulations of the elastic strain fields for double Ge/Si quantum dots located on the same wetting layer are carried out. The cluster approximation is used for the atomistic model based on the Keating potential. The spatial distributions of the strain energy density and electron potential energy are calculated using clusters containing atoms of 150 coordination spheres. It is shown that the used c… ▽ More

    Submitted 23 January, 2017; originally announced January 2017.

    Comments: 13 pages, 17 figures. arXiv admin note: text overlap with arXiv:1601.04762

  2. arXiv:1601.04762  [pdf

    cond-mat.mes-hall

    Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

    Authors: Yu. N. Morokov, M. P. Fedoruk

    Abstract: An atomistic model based on the Keating potential and the conjugate gradient method are used for simulation of the strain fields for single Ge/Si quantum dots. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calc… ▽ More

    Submitted 18 January, 2016; originally announced January 2016.

    Comments: 19 pages. arXiv admin note: text overlap with arXiv:1601.00489

  3. arXiv:1601.00489  [pdf

    cond-mat.mes-hall

    Structures with Vertically Stacked Ge/Si Quantum Dots for Logical Operations

    Authors: Yu. N. Morokov, M. P. Fedoruk, A. V. Dvurechenskii, A. F. Zinov'eva, A. V. Nenashev

    Abstract: Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and an atomistic model based on the Keating potential. Calculations are performed in the cluster approximation using clusters containing about three million atoms be… ▽ More

    Submitted 4 January, 2016; originally announced January 2016.

    Comments: 9 pages

  4. arXiv:cond-mat/0011435  [pdf, ps, other

    cond-mat

    Memory Effect in Silicon Nitride in Silicon Devices

    Authors: V. A. Gritsenko, Yu. N. Morokov, Yu. N. Novikov, J. B. Xu

    Abstract: The dominant dielectric used currently in silicon devices is silicon oxide. Its application for future devices will be impeded by several fundamental limitations which lead to low reliability of semiconductor devices and to the necessity of alternative dielectrics. Amorphous silicon nitride and oxynitride are considered now as alternative to silicon oxide in future devices. One of the unique pro… ▽ More

    Submitted 25 November, 2000; originally announced November 2000.

    Comments: 4 pages, LaTex

  5. arXiv:cond-mat/0011241  [pdf, ps, other

    cond-mat

    Nature of traps responsible for failure of MOS devices

    Authors: V. A. Gritsenko, P. M. Lenahan, Yu. N. Morokov, Yu. N. Novikov

    Abstract: A failure of chips in a huge amount of modern electronic devices is connected as a rule with the undesirable capturing of charge (electrons and holes) by traps in a thin insulating film of silicon oxide in transistors. It leads to a breakdown of transistors or to a destructive change of their characteristics. It is suggested that silicon oxide will be replaced in the next generation of nanoscale… ▽ More

    Submitted 14 November, 2000; originally announced November 2000.

    Comments: 4 pages, LaTex, 1 gif file with 2 figures