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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1601.04762 (cond-mat)
[Submitted on 19 Jan 2016]

Title:Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Authors:Yu. N. Morokov, M. P. Fedoruk
View a PDF of the paper titled Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots, by Yu. N. Morokov and M. P. Fedoruk
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Abstract:An atomistic model based on the Keating potential and the conjugate gradient method are used for simulation of the strain fields for single Ge/Si quantum dots. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduction band. It is shown that the strain field in silicon decreases sufficiently rapidly with distance from the center of the quantum dot, so the influence of the cluster boundary is observed only for very large quantum dots.
Comments: 19 pages. arXiv admin note: text overlap with arXiv:1601.00489
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1601.04762 [cond-mat.mes-hall]
  (or arXiv:1601.04762v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1601.04762
arXiv-issued DOI via DataCite

Submission history

From: Yuri Morokov [view email]
[v1] Tue, 19 Jan 2016 00:36:54 UTC (3,788 KB)
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